JPH0195527A - Wire bonding equipment - Google Patents
Wire bonding equipmentInfo
- Publication number
- JPH0195527A JPH0195527A JP62252991A JP25299187A JPH0195527A JP H0195527 A JPH0195527 A JP H0195527A JP 62252991 A JP62252991 A JP 62252991A JP 25299187 A JP25299187 A JP 25299187A JP H0195527 A JPH0195527 A JP H0195527A
- Authority
- JP
- Japan
- Prior art keywords
- window
- groove
- atmospheric gas
- lid
- lead frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 18
- 239000003963 antioxidant agent Substances 0.000 claims description 2
- 230000003078 antioxidant effect Effects 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 8
- 238000007254 oxidation reaction Methods 0.000 abstract description 8
- 238000010276 construction Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 23
- 238000007664 blowing Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 241000208195 Buxaceae Species 0.000 description 2
- 230000003064 anti-oxidating effect Effects 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010301 surface-oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/787—Means for aligning
- H01L2224/78703—Mechanical holding means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85053—Bonding environment
- H01L2224/85054—Composition of the atmosphere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/1016—Shape being a cuboid
- H01L2924/10161—Shape being a cuboid with a rectangular active surface
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はリードフレーム上に固着された半導体素子とリ
ードフレームのインナーリードとを接続するワイヤボン
ディング装置に関し、特に、ボンディング部の酸化防止
用ガス吹出構造を備えたフレーム押え板に関するもので
ある。Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a wire bonding device for connecting a semiconductor element fixed on a lead frame to an inner lead of the lead frame. This invention relates to a frame presser plate with a blowout structure.
従来、調合金製のリードフレームのインナーリードにワ
イヤボンディングを行なうにあたプ、ボンディング部の
表面酸化を防止するために酸化防止用の雰囲気ガスが半
導体素子およびインナーリード部に吹き付けられている
。この雰囲気ガスは、通常、リードフレームをヒートブ
ロック上に固定する押え板に形成された流路内を通り、
ボンディング部位に吹き付けられることになる。Conventionally, when performing wire bonding to the inner leads of a lead frame made of a prepared alloy, an atmospheric gas for preventing oxidation is blown onto the semiconductor element and the inner leads in order to prevent surface oxidation of the bonding parts. This atmospheric gas normally passes through a flow path formed in the holding plate that fixes the lead frame on the heat block.
It will be sprayed onto the bonding area.
従来のこの種雰囲気ガス用流路を備えた押え板は第４図
ないし第６図に示すように構成されている。第４図は押
え板がリードフレームを固定した状態を示す側断面図、
第５図（ａ） 、 （ｂ）は従来の押え板本体を示す平
面図とＩＩＩ−ｎｕ線断面図、第６図（ａ＞−Ｔｏ）は
押え板本体に取付けられる蓋体を示す平面図−と■−■
線断面図である。これらの図において、符号１は半導体
素子、２はリードフレームで、この半導体素子１はリー
ドフレーム２のグイバット２ａ上に固着され、その表面
電極（図示せず）は金属細線３によってリードフレーム
２のインナーリード２ｂに接続されている。４は前記リ
ードフレーム２を支承し、かつ半導体素子（および９−
ドフレーム２を加熱するためのヒートブロックでアル。A conventional holding plate of this type having a flow path for atmospheric gas is constructed as shown in FIGS. 4 to 6. Figure 4 is a side sectional view showing the state in which the holding plate fixes the lead frame;
FIGS. 5(a) and (b) are a plan view and a sectional view taken along line III-nu of a conventional presser plate body, and FIG. 6(a>-To) is a plan view showing a lid attached to the presser plate body. − and ■−■
FIG. In these figures, the reference numeral 1 is a semiconductor element, and 2 is a lead frame. This semiconductor element 1 is fixed on the lead frame 2's lead frame 2a, and its surface electrode (not shown) is connected to the lead frame 2 by a thin metal wire 3. It is connected to the inner lead 2b. 4 supports the lead frame 2 and supports the semiconductor element (and 9-
Al with a heat block to heat the frame 2.
５ バリー ）’フレーム２をヒートブロック４上に固
定するための押え板で、この押え板５は本体５ａと蓋体
５ｂ とから構成されておシ、本体５ａは第５図（ａ
） 、 （ｂ）に示すように、蓋体５ｂを支承する段部
５ｃが形成された凹部５ｄと、この凹部５ｄの底部に形
成され、半導体素子１およびインナーリード２ｂを囲む
窓部５ｅと、この窓部５ｅの−開ロ縁に形成された突起
部５ｆとからなｐｌまた、蓋体５ｂは第６図（ａ） 、
（ｂ）Ｋ示すように、前記本体５ａの窓部５ｅと対向
する窓部５ｇと、本体５ａの段部５ｃに当接するつば５
ｈとから構成されている。また、前記本体５ａの凹部５
ｄの深さは、との凹部５ｄ内に蓋体５ｂが挿入され段部
５Ｃによってつば５ｈが支承された際に、蓋体５ｂの底
面と凹部５ｄの底面との間に若干の間隙が生じる寸法を
もって形成されておシ、この間隙によって酸化防止用の
雰囲気ガスの流路６が′形成されている。７は雰囲気ガ
スボンベ（図示せず）に接続された雰囲気ガス吹込管で
、蓋体５ｂの上面と底面を連通する流入孔５１の開口部
分に取付けられている。すなわち、雰囲気ガスは第４図
中の矢印で示したように、雰囲気ガス吹込管１から取付
は口８、流路６を通り、窓部５ｅ、５Ｐ内に吹き出され
ることになる。９は金線を保持し、半導体素子１０表面
電極（図示せず）およびインナーリード２ｂに圧接させ
るためのキャピラリで、ＵＳホーン１０に取付けられて
いる。5 Barry)' A holding plate for fixing the frame 2 on the heat block 4. This holding plate 5 is composed of a main body 5a and a lid 5b.The main body 5a is shown in FIG.
), as shown in (b), a recess 5d in which a step 5c for supporting the lid 5b is formed, a window 5e formed at the bottom of the recess 5d and surrounding the semiconductor element 1 and the inner lead 2b, The lid body 5b is connected to the projection 5f formed on the opening edge of the window 5e as shown in FIG. 6(a).
(b) As shown in K, a window 5g facing the window 5e of the main body 5a, and a collar 5 abutting against the step 5c of the main body 5a.
It is composed of h. Further, the recess 5 of the main body 5a
The depth d is such that when the lid 5b is inserted into the recess 5d and the collar 5h is supported by the step 5C, a slight gap is created between the bottom surface of the lid 5b and the bottom surface of the recess 5d. This gap forms a flow path 6 for atmospheric gas for preventing oxidation. Reference numeral 7 denotes an atmospheric gas blowing pipe connected to an atmospheric gas cylinder (not shown), which is attached to the opening of the inflow hole 51 that communicates the top and bottom surfaces of the lid 5b. That is, the atmospheric gas is blown out from the atmospheric gas blowing pipe 1 through the mounting port 8 and the flow path 6 into the windows 5e and 5P, as indicated by the arrows in FIG. A capillary 9 is attached to the US horn 10 to hold a gold wire and bring it into pressure contact with the surface electrode (not shown) of the semiconductor element 10 and the inner lead 2b.
次に、このように構成された押え板５を使用してワイヤ
ボンディングする方法について説明する。Next, a method of wire bonding using the presser plate 5 configured as described above will be explained.
先ず、ヒートブロック４上に、あらかじめダイパラ）２
ｍに半導体素子１が固着されたリードフレーム２を載置
する。次で、半導体素子１およびインナーリード２ｂが
窓部５ｅＫよシ囲まれるように、押え板５によってリー
ドフレーム２をヒートブロック４に押付け、固定する。First, place the heat block 4 on the heat block 4 beforehand.
The lead frame 2 to which the semiconductor element 1 is fixed is placed on the lead frame m. Next, the lead frame 2 is pressed and fixed against the heat block 4 by the holding plate 5 so that the semiconductor element 1 and the inner leads 2b are surrounded by the window 5eK.
この際、押え板５の突起部５ｆがリードフレーム２のイ
ンナーリード部を押圧することになる。そして、雰囲気
ガスが雰囲気ガス吹込管７から流入孔Ｓｉ ｅ流路６を
介して押え板５の窓部５ｅ、５９内に吹き出され、ヒー
トブロック４の熱がリードフレーム２および半導体素子
１に伝導された後、ＵＳホー７１１およびキャピラリ９
によって押え板５の窓部５ｅ。At this time, the protruding portion 5f of the holding plate 5 presses the inner lead portion of the lead frame 2. Then, the atmospheric gas is blown out from the atmospheric gas blowing pipe 7 through the inflow hole Sie channel 6 into the windows 5e and 59 of the holding plate 5, and the heat of the heat block 4 is conducted to the lead frame 2 and the semiconductor element 1. After that, US Ho 711 and Capillary 9
The window 5e of the presser plate 5 is
５り内でワイヤボンディングが行なわれるととＫなる。If wire bonding is performed within 5, then K.
しかるに１このように構成された押え板５においては、
雰囲気ガスの流路が、押え板５の本体５ａにおける凹部
５ｄの底面と蓋体５ｂの底面との間に設けられた空間で
あるために、雰囲気ガスの流れる方向が定まらず、窓部
５ｅ、５９内に吹き出される雰囲気ガス量が場所によっ
て異なシ、また、雰囲気ガスが窓部５ｅ、５ｐ内に吹き
出される際に、窓部５９の上方の空気と混合されるため
半導体素子（およびインナーリード２ｂ付近の酸素濃度
を下げることができないので、ボンディング部の酸化を
防ぐことができず、安定したボンディングを行うことが
できないという問題があった。However, in the presser plate 5 configured in this way,
Since the flow path of the atmospheric gas is a space provided between the bottom surface of the recess 5d in the main body 5a of the holding plate 5 and the bottom surface of the lid body 5b, the direction in which the atmospheric gas flows is not determined, and the window portion 5e, The amount of atmospheric gas blown into the window 59 varies depending on the location, and when the atmospheric gas is blown into the windows 5e and 5p, it mixes with the air above the window 59, so the semiconductor element (and inner Since the oxygen concentration near the lead 2b cannot be lowered, oxidation of the bonding portion cannot be prevented, resulting in a problem that stable bonding cannot be performed.
本発明に係るワイヤボンディング装置は、押え板の流路
を、窓部の上部周側部を囲む第一の凹溝と、窓部の周方
向に沿って複数形成され前記第一の凹溝から下方へ向か
って傾斜し窓部の下部周側部に開口する第二の凹溝とに
よって形成したものである。In the wire bonding device according to the present invention, the flow path of the holding plate is formed from a first groove surrounding the upper circumferential side of the window portion and a plurality of first grooves formed along the circumferential direction of the window portion. This is formed by a second groove that slopes downward and opens at the lower circumferential side of the window portion.
酸化防止用ガスは第一の凹溝および第二の凹溝内を流れ
、半導体素子およびインナーリードに多方向から等しい
流量をもって直接吹き付けられる。The antioxidant gas flows in the first groove and the second groove, and is directly blown onto the semiconductor element and the inner leads from multiple directions at an equal flow rate.
以下、その構成等を図に示す実施例によシ詳細に説明す
る。第１図は本発明に係る押え板がリードフレームを固
定した状態を示す側断面図、第２図（ａ） 、 （ｂ）
は押え板本体の平面図とＩ−Ｉ線断面図、第３図（ａ）
、 （ｂ）は押え板の蓋体の平面図と■−■線断面図
である。これらの図において前記従来例で説明した部材
と同一もしくは同等部材においては同一符号を付し、こ
こにおいて詳細な説明は省略する。これらの図において
、１１は本発明に係る押え板で、この押さえ板１１は本
体１１ｍ と蓋体１１ｂとから構成されておシ、本体１
１＆は第２図（ａ） 、 （ｂ）に示すように、後述す
る蓋体１１ｂのつばと対接する段部１１ｃ と、同じ
く蓋体１１ｂの傾斜面と対接する傾斜面１１ｄによって
前記段部１１ｅから下方に向うにつれ開口面積が次第に
小さく表るよう形成された凹部１１ｅと、との凹部１１
ｅ の底部に開口された窓部１１ｆ と、この窓部１１
ｆ の−開口縁に形成された突起部１１Ｆ とが形成さ
れている。また、蓋体１１ｂ は第３図（、）、缶）に
示すように、前記本体１１ａの段部１１ｃおよび傾斜面
１１ｄにそれぞれ対接するつげ１１ｈおよび傾斜面１１
ｉ が形成され、かつ本体１１ｍの窓部１１ｆに対向す
る窓部１１ｊが形成されている。なお、１１には前記つ
げ１１ｈの上面と裏面とを連通ずる流入孔である。１２
は酸化防止用の雰囲気ガスが吹き込まれる第一の凹溝で
、この第一の凹溝１２は本体１１＆の段部１１ｃに、凹
部１１ｄの周側部を囲むように途切れることなく一連に
形成されている。１３は雰囲気ガスを前記第一の凹溝１
２から窓部１１ｆ内に導くための第二 −の凹溝で
、この第二の凹溝１３は前記本体１１ｍの傾斜面１１ｄ
Ｋ沿って第一の凹溝１２と窓部１１ｆの下部局側部と
を連通ずるよう形成され、かつ窓部１１ｆの周方向に沿
って複数形成されている。Hereinafter, the configuration and the like will be explained in detail with reference to the embodiment shown in the drawings. Fig. 1 is a side sectional view showing a state in which the holding plate according to the present invention fixes the lead frame, and Fig. 2 (a) and (b)
Figure 3(a) is a plan view and a sectional view taken along the line I-I of the presser plate body.
, (b) is a plan view and a sectional view taken along the line ■-■ of the lid of the presser plate. In these figures, members that are the same as or equivalent to those described in the conventional example are given the same reference numerals, and detailed explanations will be omitted here. In these figures, reference numeral 11 denotes a presser plate according to the present invention, and this presser plate 11 is composed of a main body 11m and a lid body 11b.
1&, as shown in FIGS. 2(a) and 2(b), the stepped portion 11e is formed by a stepped portion 11c that contacts the brim of the lid 11b, which will be described later, and an inclined surface 11d that also contacts the sloped surface of the lid 11b. and a recess 11e formed so that the opening area becomes gradually smaller toward the bottom.
A window 11f opened at the bottom of e, and this window 11
A protrusion 11F formed on the opening edge of f is formed. The lid body 11b also has a boxwood 11h and an inclined surface 11 which are in contact with the stepped portion 11c and the inclined surface 11d of the main body 11a, respectively, as shown in FIG.
i is formed, and a window 11j is formed opposite to the window 11f of the main body 11m. Incidentally, numeral 11 is an inflow hole that communicates the upper surface and the back surface of the boxwood 11h. 12
is a first groove into which an atmospheric gas for preventing oxidation is blown, and this first groove 12 is formed in a continuous series in the stepped portion 11c of the main body 11& so as to surround the circumferential side of the groove 11d. ing. Reference numeral 13 refers to the first concave groove 1 for directing the atmospheric gas.
2 into the window portion 11f, and this second groove 13 is a second groove 13 for guiding the inside of the window 11f from the main body 11m.
The first groove 12 is formed along K so as to communicate with the lower central side portion of the window portion 11f, and a plurality of grooves are formed along the circumferential direction of the window portion 11f.
すなわち、この第二の凹溝１３．１３・・・は第一の凹
？１１１２から窓部１１ｆの幅方向および長手方向と平
行にかつ傾斜面１１ｄ上に沿って斜めに下降するよう形
成されている。In other words, is this second groove 13, 13... the first groove? It is formed to descend obliquely from 1112 parallel to the width direction and longitudinal direction of the window portion 11f and along the sloped surface 11d.
このように形成された押え板１１は、本体１１ａの段部
１１ｃ上に蓋体１１ｂのつば１１ｈを、凹部１１ｅの傾
斜面１１ｄ上に蓋体１１ｂの傾斜面１１ｉをそれぞれ当
接させて、本体１１ａの凹部１１ｅ内に蓋体１１ｂ を
取付けることによって組立てられ、この状態で、本体１
１ａ に形成された第一の凹溝１２および第二の凹溝１
３は蓋体１１ｂ によって上側開口部を閉塞されること
になシ、第一の凹溝１２および第二の凹溝１３からなる
雰囲気ガスの流路が形成されることになる。The presser plate 11 formed in this way is assembled by bringing the collar 11h of the lid 11b into contact with the stepped portion 11c of the main body 11a, and by bringing the slope 11i of the lid 11b into contact with the slope 11d of the recess 11e. It is assembled by attaching the lid 11b into the recess 11e of the main body 11a.
A first groove 12 and a second groove 1 formed in 1a
3 has its upper opening closed by the lid 11b, so that an atmospheric gas flow path consisting of the first groove 12 and the second groove 13 is formed.
すなわち、雰囲気ガスは第１図中矢印で示したように、
雰囲気ガス吹込管７から流入孔１１ｋ。In other words, the atmospheric gas is as indicated by the arrow in Figure 1.
Inflow hole 11k from atmospheric gas blowing pipe 7.
第一の凹溝１２および第二の凹溝１３を通シ、押え板１
１の窓部１１ｆの下部周側部へ吹き出されるととＫなる
。したがって、この雰囲気ガスは半導体素子１およびイ
ンナーリード２ｂに多方向から等しい流量をもって直接
吹き付けられるととＫなる。Passing through the first groove 12 and the second groove 13, the presser plate 1
When the air is blown out to the lower circumferential side of the window 11f of No. 1, it becomes K. Therefore, when this atmospheric gas is directly blown onto the semiconductor element 1 and the inner leads 2b from multiple directions at the same flow rate, it becomes K.
なお、本実施例では押え板１１０本体１１ａ Ｋ第一の
凹溝１２と第二の凹溝１３を形成した例を示したが、こ
れら第一、第二の凹溝１２ 、１’３は蓋体１１ｂ側に
形成してもよく、また、本体１１ｍか蓋体１１ｂのどち
らか一方に第一の凹溝１２を、他方に第二の凹溝１３を
形成してもよく、かつその逆に形成しても上記実施例と
同等の効果が得られる。In this embodiment, an example is shown in which the first groove 12 and the second groove 13 are formed in the main body 11a of the presser plate 110, but these first and second grooves 12 and 1'3 are formed on the lid. The first groove 12 may be formed on the body 11b side, or the first groove 12 may be formed on either the body 11m or the lid 11b, and the second groove 13 may be formed on the other side, and vice versa. Even if it is formed, the same effect as the above embodiment can be obtained.
以上説明したように本発明によれば、押え板の酸化防止
用ガス流路を、窓部の上部周側部を囲む第一の凹溝と、
窓部の周方向に沿って複数形成され前記第一の凹溝から
下方へ向かって傾斜し窓部の下部周側部に開口する第二
の凹溝とによって形成したため、酸化防止用ガスは第一
の凹溝から第二の凹溝内を流れ、半導体素子およびイン
ナーリードに多方向から等しい流量をもって直接吹き付
けられることになるから、半導体素子およびインナーリ
ード付近の残留酸素濃度を均一に、かつ５００ｐｐｍ以
下に低く抑えることができるので、ボンディング部分の
酸化を窓部内金域にわたり防止でき、安定したボンディ
ングを行なうことができる。As explained above, according to the present invention, the anti-oxidation gas flow path of the holding plate is formed by the first groove surrounding the upper circumferential side of the window portion;
A plurality of grooves are formed along the circumferential direction of the window, and the second grooves are inclined downward from the first groove and open to the lower circumferential side of the window, so that the anti-oxidation gas is The flow flows from the first groove into the second groove and is directly blown onto the semiconductor element and inner leads from multiple directions at the same flow rate, so that the residual oxygen concentration near the semiconductor element and inner leads can be uniformly reduced to 500 ppm. Since the oxidation of the bonding portion can be suppressed to below, oxidation of the bonding portion can be prevented over the inner metal region of the window portion, and stable bonding can be performed.
第１図は本発明に係る押え板がリードフレームを固定し
た状態を示す側断面図、第２図（、） 、 （ｂ）は押
え板本体の平面図と！−１線断面図、第３図（、）、缶
）は押え板の蓋体の平面図と■−■線断面図、第４図は
従来の押え板がリードフレームを固定した状態を示す側
断面図、第５図（ａ） 、 （ｂ）は従来の押え板本体
を示す平面図と■−■線断面図、第６図（、） 、 （
ｂ）は押え板本体に取付けられる蓋体を示す平面図とｆ
Ｖ−ＩＶ線断面図である。
１・・・・半導体素子、２・・・・リードフレーム、２
ｂ ・・・・インナーリード、１１・・・・押え板、１
１ａ＠・Φ・本体、１１ｂ−、φ・蓋体、１１ｆ、１１
ｊ ・・・・窓部、１２・・Φ・第一の凹溝、１３・・
・・第二の凹溝。Fig. 1 is a side sectional view showing a state in which the holding plate according to the present invention fixes a lead frame, and Figs. 2 (,) and (b) are plan views of the holding plate main body. -1 line cross-sectional view, Figure 3 (,), can) is a plan view of the lid of the holding plate and ■-■ line cross-sectional view, and Figure 4 is the side showing the state in which the conventional holding plate fixes the lead frame. Cross-sectional views, Figures 5(a) and (b) are plan views showing the conventional presser plate body, and cross-sectional views taken along the line ■-■, Figures 6(, ), (
b) is a plan view showing the lid attached to the presser plate body, and f
It is a sectional view taken along the line V-IV. 1...Semiconductor element, 2...Lead frame, 2
b...Inner lead, 11...Press plate, 1
1a@・Φ・Main body, 11b-, φ・Lid, 11f, 11
j... Window part, 12... Φ, first groove, 13...
...Second groove.
Claims (1)
体素子とインナーリードとを囲む窓部および前記本体と
蓋体との間に形成され窓部に酸化防止用ガスを供給する
流路を有し、かつリードフレームを固定する押え板を備
えたワイヤボンディング装置において、前記流路を、前
記窓部の上部周側部を囲む第一の凹溝と、窓部の周方向
に沿つて複数形成され前記第一の凹溝から下方へ向かつ
て傾斜し窓部の下部周側部に開口する第二の凹溝とによ
つて形成したことを特徴とするワイヤボンディング装置
。It consists of a main body and a lid, and has a window that surrounds the semiconductor element on the lead frame and the inner leads, and a flow path that is formed between the main body and the lid and supplies an antioxidant gas to the window, and a wire bonding apparatus including a holding plate for fixing a lead frame, in which the flow path is formed by a first groove surrounding an upper circumferential side of the window, and a plurality of grooves formed along the circumferential direction of the window. A wire bonding device characterized in that it is formed by a second groove that slopes downward from the first groove and opens at the lower circumferential side of the window portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62252991A JPH0195527A (en) | 1987-10-07 | 1987-10-07 | Wire bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62252991A JPH0195527A (en) | 1987-10-07 | 1987-10-07 | Wire bonding equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0195527A true JPH0195527A (en) | 1989-04-13 |
Family
ID=17244979
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62252991A Pending JPH0195527A (en) | 1987-10-07 | 1987-10-07 | Wire bonding equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0195527A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5014900A (en) * | 1990-03-08 | 1991-05-14 | Texas Instruments Incorporated | Deep access bond head |
| JP2003007760A (en) * | 2001-06-27 | 2003-01-10 | Sanyo Electric Co Ltd | Method of manufacturing recognition equipment, bonding equipment, circuit device |
| CN100383911C (en) * | 2004-01-22 | 2008-04-23 | 先进科技新加坡有限公司 | System for reducing oxidation of electronic devices |
| JP2009177215A (en) * | 2009-05-13 | 2009-08-06 | Sanyo Electric Co Ltd | Method for manufacturing semiconductor device |
| JP2012039157A (en) * | 2011-11-18 | 2012-02-23 | Kaijo Corp | Wire bonding device |
| US11826861B1 (en) * | 2020-08-12 | 2023-11-28 | Sion Power Corporation | Joining systems, clamping fixtures, and related systems and methods |
-
1987
- 1987-10-07 JP JP62252991A patent/JPH0195527A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5014900A (en) * | 1990-03-08 | 1991-05-14 | Texas Instruments Incorporated | Deep access bond head |
| JP2003007760A (en) * | 2001-06-27 | 2003-01-10 | Sanyo Electric Co Ltd | Method of manufacturing recognition equipment, bonding equipment, circuit device |
| JP4711549B2 (en) * | 2001-06-27 | 2011-06-29 | 三洋電機株式会社 | Manufacturing method of semiconductor device |
| CN100383911C (en) * | 2004-01-22 | 2008-04-23 | 先进科技新加坡有限公司 | System for reducing oxidation of electronic devices |
| JP2009177215A (en) * | 2009-05-13 | 2009-08-06 | Sanyo Electric Co Ltd | Method for manufacturing semiconductor device |
| JP4717129B2 (en) * | 2009-05-13 | 2011-07-06 | 三洋電機株式会社 | Manufacturing method of semiconductor device |
| JP2012039157A (en) * | 2011-11-18 | 2012-02-23 | Kaijo Corp | Wire bonding device |
| US11826861B1 (en) * | 2020-08-12 | 2023-11-28 | Sion Power Corporation | Joining systems, clamping fixtures, and related systems and methods |
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