JPH0194664A - Field-effect transistor - Google Patents

Field-effect transistor

Info

Publication number
JPH0194664A
JPH0194664A JP25207087A JP25207087A JPH0194664A JP H0194664 A JPH0194664 A JP H0194664A JP 25207087 A JP25207087 A JP 25207087A JP 25207087 A JP25207087 A JP 25207087A JP H0194664 A JPH0194664 A JP H0194664A
Authority
JP
Japan
Prior art keywords
melting point
high melting
layer
point metal
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25207087A
Inventor
Yasuro Ikeda
Original Assignee
Nec Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corp filed Critical Nec Corp
Priority to JP25207087A priority Critical patent/JPH0194664A/en
Publication of JPH0194664A publication Critical patent/JPH0194664A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To improve reliability of semiconductor devices while preventing the deterioration of dielectric strength induced by reaction between a gate insulating film or interlayer insulating film and a high melting point metal layer of a gate electrode and controlling the threshold voltage of a transistor, by coating the surroundings of the high melting point metal layer consisting of the gate electrode with a high melting point metal nitride layer, or like means. CONSTITUTION:A gate electrode comprises a high melting point metal nitride layer 4 arranged on a gate insulating film 8, a high melting point metal layer 5 or high melting point metal silicide layer arranged on such high melting point nitride layer 4, and a high melting point metal nitride layer 6 or high melting point metal oxide layer coating the surface of such high melting point metal layer 5 or high melting point silicide layer. For example, a field-effect transistor is constructed of the gate insulating film 3; the gate electrode in which a tungsten nitride layer 5 and a tungsten layer 5 are stacked upon such insulating film 3 as barrier layers and a tungsten nitride layer 6 is formed by coating the surface of such tungsten layer 5; a source region 7 and a drain region 8 which are of opposite conductivity type diffusion layer formed within an element forming region matching such gate electrode and a field insulating film 2.
JP25207087A 1987-10-05 1987-10-05 Field-effect transistor Pending JPH0194664A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25207087A JPH0194664A (en) 1987-10-05 1987-10-05 Field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25207087A JPH0194664A (en) 1987-10-05 1987-10-05 Field-effect transistor

Publications (1)

Publication Number Publication Date
JPH0194664A true JPH0194664A (en) 1989-04-13

Family

ID=17232131

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25207087A Pending JPH0194664A (en) 1987-10-05 1987-10-05 Field-effect transistor

Country Status (1)

Country Link
JP (1) JPH0194664A (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01265542A (en) * 1988-04-15 1989-10-23 Toshiba Corp Semiconductor device
EP0849806A2 (en) * 1996-12-19 1998-06-24 Texas Instruments Incorporated Improvements in or relating to semiconductor devices having tungsten nitride sidewalls
JP2000332259A (en) * 1999-03-17 2000-11-30 Semiconductor Energy Lab Co Ltd Wiring material, semiconductor device with wiring using the same and manufacture of the semiconductor device
JP2001007110A (en) * 1999-06-22 2001-01-12 Semiconductor Energy Lab Co Ltd Wiring material, semiconductor device with wiring using the same and manufacture thereof
US6265297B1 (en) 1999-09-01 2001-07-24 Micron Technology, Inc. Ammonia passivation of metal gate electrodes to inhibit oxidation of metal
US6432803B1 (en) 1998-12-14 2002-08-13 Matsushita Electric Industrial Co., Inc. Semiconductor device and method of fabricating the same
US6458714B1 (en) 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture
EP1786037A2 (en) * 1999-04-12 2007-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US7816191B2 (en) 1999-06-29 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US7906429B2 (en) 1999-06-22 2011-03-15 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
JP2012124508A (en) * 2012-01-26 2012-06-28 Semiconductor Energy Lab Co Ltd Semiconductor device, liquid crystal module, electronic equipment, and wiring
JP2012160737A (en) * 2012-03-08 2012-08-23 Toshiba Corp Method of manufacturing semiconductor device
US9045831B2 (en) 1999-07-22 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147163A (en) * 1984-01-11 1985-08-03 Seiko Epson Corp Semiconductor device
JPS6213075A (en) * 1985-07-10 1987-01-21 Nec Corp Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60147163A (en) * 1984-01-11 1985-08-03 Seiko Epson Corp Semiconductor device
JPS6213075A (en) * 1985-07-10 1987-01-21 Nec Corp Semiconductor device

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01265542A (en) * 1988-04-15 1989-10-23 Toshiba Corp Semiconductor device
EP0849806A2 (en) * 1996-12-19 1998-06-24 Texas Instruments Incorporated Improvements in or relating to semiconductor devices having tungsten nitride sidewalls
EP0849806A3 (en) * 1996-12-19 1999-08-25 Texas Instruments Incorporated Improvements in or relating to semiconductor devices having tungsten nitride sidewalls
US6432803B1 (en) 1998-12-14 2002-08-13 Matsushita Electric Industrial Co., Inc. Semiconductor device and method of fabricating the same
JP2000332259A (en) * 1999-03-17 2000-11-30 Semiconductor Energy Lab Co Ltd Wiring material, semiconductor device with wiring using the same and manufacture of the semiconductor device
US8866143B2 (en) 1999-04-12 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
EP1786037A3 (en) * 1999-04-12 2012-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
EP1786037A2 (en) * 1999-04-12 2007-05-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for fabricating the same
US8357611B2 (en) 1999-06-22 2013-01-22 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
JP2001007110A (en) * 1999-06-22 2001-01-12 Semiconductor Energy Lab Co Ltd Wiring material, semiconductor device with wiring using the same and manufacture thereof
US7906429B2 (en) 1999-06-22 2011-03-15 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US9660159B2 (en) 1999-06-22 2017-05-23 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US7816191B2 (en) 1999-06-29 2010-10-19 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
US9045831B2 (en) 1999-07-22 2015-06-02 Semiconductor Energy Laboratory Co., Ltd. Wiring and manufacturing method thereof, semiconductor device comprising said wiring, and dry etching method
US6617624B2 (en) 1999-09-01 2003-09-09 Micron Technology, Inc. Metal gate electrode stack with a passivating metal nitride layer
US6265297B1 (en) 1999-09-01 2001-07-24 Micron Technology, Inc. Ammonia passivation of metal gate electrodes to inhibit oxidation of metal
US6458714B1 (en) 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture
JP2012124508A (en) * 2012-01-26 2012-06-28 Semiconductor Energy Lab Co Ltd Semiconductor device, liquid crystal module, electronic equipment, and wiring
JP2012160737A (en) * 2012-03-08 2012-08-23 Toshiba Corp Method of manufacturing semiconductor device

Similar Documents

Publication Publication Date Title
US6737309B2 (en) Complementary MISFET
US6097070A (en) MOSFET structure and process for low gate induced drain leakage (GILD)
US4810666A (en) Method for manufacturing a mosic having self-aligned contact holes
CA1151295A (en) Dual resistivity mos devices and method of fabrication
US3602782A (en) Conductor-insulator-semiconductor fieldeffect transistor with semiconductor layer embedded in dielectric underneath interconnection layer
EP0540993A1 (en) Structure and fabrication of high transconductance MOS field effect transistor using a buffer layer/ferroelectric/buffer layer stack as the gate dielectric
US7223659B2 (en) Memory device and fabrication method thereof
TW345736B (en) Field-effect transistor and manufacture thereof
TW468268B (en) Transistor and semiconductor device
TW364169B (en) Improved process for silicide layer of MOS device
TW347558B (en) Semiconductor device with self-aligned contact and its manufacture
GB2026768A (en) Process for the production of an integrated multilayer insulation storage cell
KR960009221A (en) Laminating device
KR970008496A (en) Mis a semiconductor device and a manufacturing method thereof and a diagnostic method
EP1005094A3 (en) Semiconductor devices having a thin film field-effect transistor and corresponding manufacturing methods
EP0820096A3 (en) Semiconductor device and method for fabricating the same
KR970053979A (en) How to program, including an improved transistor cell flash memory and a memory
EP0805499A3 (en) High withstand voltage M I S field effect transistor and semiconductor integrated circuit
TW283263B (en) Fabrication method of semiconductor device and field effect transistor
EP0915522A3 (en) Semiconductor device comprising a capacitor and method of manufacturing the same
JPH02148740A (en) Semiconductor device and manufacture thereof
ES2179619T3 (en) Field effect transistor.
KR860001490A (en) And a method of manufacturing a vertical mosfet
TW331034B (en) Flash EEPROM device and manufacturing method thereof
JPS60231357A (en) Semiconductor memory device