JPH0181035U - - Google Patents

Info

Publication number
JPH0181035U
JPH0181035U JP1987177423U JP17742387U JPH0181035U JP H0181035 U JPH0181035 U JP H0181035U JP 1987177423 U JP1987177423 U JP 1987177423U JP 17742387 U JP17742387 U JP 17742387U JP H0181035 U JPH0181035 U JP H0181035U
Authority
JP
Japan
Prior art keywords
base
transistor
emitter
withstand voltage
reverse withstand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1987177423U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987177423U priority Critical patent/JPH0181035U/ja
Publication of JPH0181035U publication Critical patent/JPH0181035U/ja
Pending legal-status Critical Current

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Description

【図面の簡単な説明】
第1図は本考案の実施例であり、第2図は本考
案の第2の実施例、第3図は従来例である。 図中、番号2,3,5,7,9,10はトラン
ジスタ、1,4,6,8はシヨツトキーダイオー
ドである。

Claims (1)

    【実用新案登録請求の範囲】
  1. トランジスタのベースエミツタ間において、そ
    の逆耐圧以上の電圧がかかるトランジスタのベー
    スに直列にシヨツトダイオードを有することを特
    徴とするベースエミツタ間逆耐圧保証回路。
JP1987177423U 1987-11-19 1987-11-19 Pending JPH0181035U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987177423U JPH0181035U (ja) 1987-11-19 1987-11-19

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987177423U JPH0181035U (ja) 1987-11-19 1987-11-19

Publications (1)

Publication Number Publication Date
JPH0181035U true JPH0181035U (ja) 1989-05-31

Family

ID=31469087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987177423U Pending JPH0181035U (ja) 1987-11-19 1987-11-19

Country Status (1)

Country Link
JP (1) JPH0181035U (ja)

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