JPH0165151U - - Google Patents

Info

Publication number

JPH0165151U

JPH0165151U JP1988124494U JP12449488U JPH0165151U JP H0165151 U JPH0165151 U JP H0165151U JP 1988124494 U JP1988124494 U JP 1988124494U JP 12449488 U JP12449488 U JP 12449488U JP H0165151 U JPH0165151 U JP H0165151U

Authority

JP

Japan

Prior art keywords

conductivity type

diffusion layer

integrated circuit

diffusion region

complementary mos

Prior art date

1988-09-22

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Pending

Links

• Espacenet
• Global Dossier
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• 238000009792 diffusion process Methods 0.000 claims description 23
• 239000000758 substrate Substances 0.000 claims description 10
• 230000000295 complement effect Effects 0.000 claims description 9
• 239000004065 semiconductor Substances 0.000 claims description 7
• 239000012212 insulator Substances 0.000 claims description 2
• 238000007796 conventional method Methods 0.000 description 4
• 239000013078 crystal Substances 0.000 description 2
• 238000010586 diagram Methods 0.000 description 2
• 238000000034 method Methods 0.000 description 2
• 239000000463 material Substances 0.000 description 1