JPH0155761B2 - - Google Patents

Info

Publication number
JPH0155761B2
JPH0155761B2 JP59037827A JP3782784A JPH0155761B2 JP H0155761 B2 JPH0155761 B2 JP H0155761B2 JP 59037827 A JP59037827 A JP 59037827A JP 3782784 A JP3782784 A JP 3782784A JP H0155761 B2 JPH0155761 B2 JP H0155761B2
Authority
JP
Japan
Prior art keywords
terminal
power supply
view
microwave
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59037827A
Other languages
Japanese (ja)
Other versions
JPS60182201A (en
Inventor
Osahisa Furuya
Osamu Baba
Shinichi Murai
Nobutoshi Fukuden
Yoichi Arai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3782784A priority Critical patent/JPS60182201A/en
Publication of JPS60182201A publication Critical patent/JPS60182201A/en
Publication of JPH0155761B2 publication Critical patent/JPH0155761B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01PWAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00Auxiliary devices
    • H01P1/20Frequency-selective devices, e.g. filters

Landscapes

  • Waveguide Connection Structure (AREA)
  • Microwave Amplifiers (AREA)

Description

【発明の詳細な説明】 (a) 発明の技術分野 本発明は、マイクロ波モジユールに係り、特
に、該モジユールの筺体から導出される電源供給
用端子部の構成に関す。
DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a microwave module, and particularly to the configuration of a power supply terminal portion led out from a housing of the module.

(b) 技術の背景 半導体装置は、その高周波対応の進歩により、
マイクロ波を媒体とする通信回線の無線中継やレ
ーダなどの装置にも使用されるようになつて来
た。
(b) Background of technology Due to the progress of semiconductor devices in their ability to handle high frequencies,
It has also come to be used in devices such as wireless relays and radars for communication lines that use microwaves as a medium.

然しながら、マイクロ波領域においては、一般
に一個の半導体装置による利得が電子管による場
合より小さいため、例えば増幅器などの場合、複
数の半導体装置を直列に接続して所要の利得を得
る回路を構成し、筺体に収納してアンプモジユー
ルにするように、モジユール構成にすることが多
い。
However, in the microwave region, the gain of a single semiconductor device is generally smaller than that of an electron tube, so in the case of an amplifier, for example, multiple semiconductor devices are connected in series to form a circuit that obtains the required gain, and the housing It is often configured as a module, such as storing it in an amplifier module.

(c) 従来技術と問題点 第1図は従来のマイクロ波アンプモジユールの
一実施例の平面図aと正面図bと側面図c、第2
図はその電源端子部の構成を示した図で、1は半
導体装置、2は筺体本体、3は蓋、4は入力端
子、5は出力端子、6は電源端子、61は導線、
62は絶縁体、63は鞘、7はプリント配線基板
をそれぞれ示す。
(c) Prior art and problems Figure 1 shows a plan view a, a front view b, a side view c, and a second view of an embodiment of a conventional microwave amplifier module.
The figure shows the configuration of the power terminal section, where 1 is a semiconductor device, 2 is a housing body, 3 is a lid, 4 is an input terminal, 5 is an output terminal, 6 is a power terminal, 61 is a conductor,
62 is an insulator, 63 is a sheath, and 7 is a printed wiring board.

第1図図示のアンプモジユールは、直列に接続
する複数の半導体装置1が箱状の例えばステンレ
スからなる筺体本体2の中に一列に並べて固定さ
れ、筺体本体2の両側面にはそれぞれ入力端子4
と出力端子5が、また、正面と背面には半導体装
置1に電源を供給する複数の電源端子6が気密に
取付けられていて、所要の配線が施され、窒素が
封入されて例えばステンレス板からなる蓋3が被
せられその周辺の溶接により密閉され、筺体本体
2の外側でプリント配線基板7により電源端子6
の並列接続がなされてなつている。
In the amplifier module shown in FIG. 1, a plurality of semiconductor devices 1 connected in series are fixed in a line in a box-shaped housing body 2 made of stainless steel, for example, and input terminals are provided on both sides of the housing body 2. 4
and an output terminal 5, and a plurality of power supply terminals 6 for supplying power to the semiconductor device 1 are airtightly installed on the front and rear sides, and the required wiring is provided, nitrogen is filled, and the battery is made of, for example, a stainless steel plate. A lid 3 is placed on the lid 3 and the surrounding area is sealed by welding, and a power terminal 6 is connected by a printed wiring board 7 on the outside of the housing body 2.
are connected in parallel.

このアンプモジユールに使用する半導体装置1
は、例えばカリウム砒素電界効果トランジスタ
(GaAs−FET)をバランス型に組み込んだアン
プユニツトで、これに供給する電源は、ゲートお
よびドレインにそれぞれ二個宛必要であるため、
筺体本体2に取付けられた電源端子6は、正面に
あるものでゲート用ドレイン用が対になり、この
対が背面にあるものとも対をなして、この四個が
一個の半導体装置1に引当られるようになつてい
る。
Semiconductor device 1 used in this amplifier module
For example, this is an amplifier unit that incorporates a balanced potassium arsenide field effect transistor (GaAs-FET), and the power supply to it requires two each for the gate and drain.
The power terminals 6 attached to the main body 2 of the casing are located on the front, and one for the gate and drain is paired, and this pair is also paired with the one on the back, and these four terminals are allocated to one semiconductor device 1. It's starting to become easier.

ところで、ここに使用される電源端子6は、第
2図図示のように、金属からなり筺体本体2の側
壁を貫通して電源を導入する導線61、例えばガ
ラスからなり導線61を絶縁して気密に支持する
絶縁体62、金属からなり絶縁体62を筺体本体
2に気密に固定するため介在する鞘63からな
り、鞘63を例えばはんだにより筺体本体2に固
定することによつて、電源端子6が筺体本体2に
気密に取付けられている。
By the way, as shown in FIG. 2, the power terminal 6 used here is made of metal and has a conductor wire 61 that penetrates the side wall of the housing body 2 to introduce the power, and is made of glass, for example, and is insulated and airtight. The insulator 62 is made of metal and is interposed to fix the insulator 62 to the housing body 2 in an airtight manner. is attached to the housing body 2 in an airtight manner.

従つて、本アンプモジユールにおいては、マイ
クロ波回路全体が導電性を有する筺体本体2と蓋
3とで密閉されて内外のマイクロ波を遮蔽してい
るとは云え、電源端子6の導線61を介して該マ
イクロ波が漏洩し、出力側に近い内側のマイクロ
波が外側を通つて入力側に近い回路に帰還し発振
を起こしたり、あるいは、アンプモジユールを収
納する外郭筺体による電磁波の境界条件の変化に
影響されて回路の特性が乱れたりする欠点を有す
る。
Therefore, in this amplifier module, although the entire microwave circuit is sealed between the conductive housing body 2 and the lid 3 to shield internal and external microwaves, the conductor 61 of the power terminal 6 is The microwaves leak through the circuit, and the microwaves on the inside near the output side pass through the outside and return to the circuit near the input side, causing oscillation, or the boundary conditions of electromagnetic waves due to the outer casing that houses the amplifier module. It has the disadvantage that the circuit characteristics may be disturbed due to the influence of changes in the current.

(d) 発明の目的 本発明の目的は上記従来の欠点に鑑み、マイク
ロ波回路を収納し金属からなる筺体に該筺体の壁
を貫通して設けた電源供給用端子を有し、然も、
該端子部で該筺体の内外間を漏洩するマイクロ波
を低減させるようにしたマイクロ波モジユールの
構成を提供するにある。
(d) Object of the Invention In view of the above-mentioned drawbacks of the conventional art, the object of the present invention is to provide a metal casing housing a microwave circuit, which has a power supply terminal provided through the wall of the casing, and
It is an object of the present invention to provide a configuration of a microwave module that reduces microwaves leaking between the inside and outside of the housing at the terminal portion.

(e) 発明の構成 上記目的は、複数の半導体装置を直列に接続す
ることで所望の利得を得る多段構成の増幅器を収
納し金属からなる筺体に該筺体の壁を貫通して設
けた電源供給用端子を有し、該端子の導線に該導
線周囲の一部を覆う電波吸収体を該壁に隣接させ
て被せ、該端子部で該筺体の内外間を漏洩するマ
イクロ波を低減させるようにしたことを特徴とす
るマイクロ波モジユールによつて達成される。
(e) Structure of the Invention The above object is to provide a power supply provided in a metal casing that penetrates the wall of the casing, which houses an amplifier with a multi-stage configuration that obtains a desired gain by connecting a plurality of semiconductor devices in series. A radio wave absorber covering a part of the periphery of the conductor wire is placed adjacent to the wall to reduce microwaves leaking between the inside and outside of the casing at the terminal portion. This is achieved by a microwave module characterized by the following.

前記導線に前記電波吸収体を被せることにより
該導線を通るマイクロ波が減衰するので、前記端
子部におけるマイクロ波の漏洩を低減させること
が可能になる。
By covering the conductive wire with the radio wave absorber, microwaves passing through the conductive wire are attenuated, so that leakage of microwaves at the terminal portion can be reduced.

(f) 発明の実施例 以下本発明の実施例を図により説明する。全図
を通じ同一符号は同一対象物を示す。
(f) Embodiments of the invention Examples of the invention will be described below with reference to the drawings. The same reference numerals indicate the same objects throughout the figures.

第3図は本発明によるマイクロ波アンプモジユ
ールの一実施例の平面図aと正面図bと側面図
c、第4図その電源端子部の構成を示した図で、
6aは電源端子、61aは導線、8は電波吸収
体、9は支持体をそれぞれ示す。
3 is a plan view a, a front view b, and a side view c of an embodiment of the microwave amplifier module according to the present invention, and FIG. 4 is a diagram showing the configuration of the power terminal section thereof.
6a is a power terminal, 61a is a conductor, 8 is a radio wave absorber, and 9 is a support.

第3図図示のアンプモジユールは、第1図図示
のアンプモジユールの電源端子6を導線が外側に
長い電源端子6aに替え、電源端子6aの導線に
絶縁性を有する電波吸収体8を被せたものであ
る。このため、プリント配線基板7の位置が第1
図図示の場合より僅かに外側になり、筺体本体2
との間に金属製の支持体9が取付けられている。
In the amplifier module shown in FIG. 3, the power terminal 6 of the amplifier module shown in FIG. It is something that Therefore, the position of the printed wiring board 7 is
It is slightly outside the case shown in the figure, and the housing body 2
A metal support 9 is attached between the two.

第4図は第2図に対応し、電源端子6a部の構
成を示している。電源端子6aでは導線61に対
応する導線61aが61より外側に長くなつてお
り、絶縁性の電波吸収材料で円筒状に形成された
電波吸収体8が絶縁体62に(即ち、筺体本体2
の壁に)隣接して導線61aの外側部に被せら
れ、支持体9により固定されている。
FIG. 4 corresponds to FIG. 2 and shows the configuration of the power supply terminal 6a section. In the power supply terminal 6a, the conductor wire 61a corresponding to the conductor wire 61 is longer than the conductor wire 61, and the radio wave absorber 8 formed in a cylindrical shape with an insulating radio wave absorbing material is attached to the insulator 62 (i.e., the case main body 2
It is placed over the outer side of the conductor 61a adjacent to the wall of the conductor 61a and fixed by a support 9.

このようにすることにより、導線61aを通る
マイクロ波が減衰するので、電源端子6a部で筺
体の内外間を漏洩するマイクロ波は低減して、第
1図図示の場合に問題になつた発振や回路特性の
乱れを防止することが可能になる。
By doing this, the microwaves passing through the conductor 61a are attenuated, so the microwaves leaking between the inside and outside of the housing at the power terminal 6a are reduced, and the oscillation that was a problem in the case shown in FIG. 1 is reduced. It becomes possible to prevent disturbances in circuit characteristics.

本願の発明者は、大きさが縦約21mm、横約130
mm、高さ約10mmのステンレスからなる筺体本体に
11個の半導体装置を収納して、周波数が13GHzで
利得が約40dBのアンプモジユールを形成するに
際して、径が約1mmφの導線、ガラスからなり外
径が約2mmφで長さが約1.7mmの絶縁体、外径が
約3.5mmφの鞘で構成される電源端子を、筺体本
体の厚さ約2.5mmある側壁の略中央に前記絶縁体
が位置するように取付けたところ、従来の構成で
は前述の発振および回路特性の乱れが生じたが、
本発明の構成に従い、絶縁性の電波吸収材料であ
るエポアイアン(TDK(株)製)で、内径約1mm、
外径約3mm、長さ約5mmの円筒状に形成した電波
吸収体を、全ての電源端子の導線に第4図図示の
如く装着し、アルミニウム板からなる支持体で固
定することにより、前記発振および前記回路特性
の乱れを完全に除去することが出来た。ちなみ
に、前記電波吸収体によるマイクロ波の減衰量を
測定したところ約10dBであつた。
The inventor of this application has a size of approximately 21 mm in height and approximately 130 mm in width.
The housing body is made of stainless steel and has a height of approximately 10 mm.
When accommodating 11 semiconductor devices to form an amplifier module with a frequency of 13 GHz and a gain of about 40 dB, a conductor wire with a diameter of about 1 mmφ and a glass wire with an outer diameter of about 2 mmφ and a length of about 1.7 mm was used. A power supply terminal consisting of an insulator and a sheath with an outer diameter of approximately 3.5 mmφ was installed so that the insulator was located approximately in the center of the approximately 2.5 mm thick side wall of the housing body. oscillation and disturbance of circuit characteristics occurred, but
According to the structure of the present invention, EPO iron (manufactured by TDK Corporation), which is an insulating radio wave absorbing material, is used with an inner diameter of about 1 mm,
A radio wave absorber formed in a cylindrical shape with an outer diameter of about 3 mm and a length of about 5 mm is attached to the conductor wires of all power terminals as shown in Fig. 4, and fixed with a support made of an aluminum plate to eliminate the oscillation. And the disturbance in the circuit characteristics could be completely removed. Incidentally, when the amount of microwave attenuation by the radio wave absorber was measured, it was approximately 10 dB.

なお、本発明の構成は上述した実施例の構造に
限定されるものではないことは、原理的に明らか
でマイクロ波モジユールの筺体内に電源を導入す
る導線の全てに適用可能である。
It should be noted that it is clear in principle that the structure of the present invention is not limited to the structure of the embodiments described above, and is applicable to all conductive wires that introduce power into the housing of the microwave module.

(g) 発明の効果 以上に説明したように、本発明による構成によ
れば、マイクロ波回路を収納し金属からなる筺体
に該筺体の壁を貫通して設けた電源供給用端子を
有し、然も、該端子部で該筺体の内外間を漏洩す
るマイクロ波を低減させるようにしたマイクロ波
モジユールの構成を提供することが出来て、該漏
洩に起因して発生する、例えば前記回路の発振な
いし外界電磁波の影響による特性乱れの除去を可
能にさせる効果がある。
(g) Effects of the Invention As explained above, according to the configuration of the present invention, the casing made of metal and housing the microwave circuit has a power supply terminal provided through the wall of the casing, However, it is possible to provide a configuration of a microwave module that reduces microwaves leaking between the inside and outside of the casing at the terminal portion, and prevents, for example, oscillation of the circuit that occurs due to the leakage. This has the effect of making it possible to eliminate characteristic disturbances caused by the influence of external electromagnetic waves.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来のマイクロ波アンプモジユールの
一実施例の平面図aと正面図bと側面図c、第2
図はその電源端子部の構成を示した図、第3図は
本発明によるマイクロ波アンプモジユールの一実
施例の平面図aと正面図bと側面図c、第4図は
その電源端子部の構成を示した図である。 図面において、1は半導体装置、2は筺体本
体、3は蓋、4は入力端子、5は出力端子、6,
6aは電源端子、61,61aは導線、62は絶
縁体、63は鞘、7はプリント配線基板、8は電
波吸収体、9は支持体をそれぞれ示す。
Figure 1 shows a plan view a, a front view b, a side view c, and a second view of an embodiment of a conventional microwave amplifier module.
3 is a plan view a, a front view b and a side view c of an embodiment of the microwave amplifier module according to the present invention, and FIG. 4 is a diagram showing the configuration of the power terminal portion thereof. FIG. In the drawings, 1 is a semiconductor device, 2 is a housing body, 3 is a lid, 4 is an input terminal, 5 is an output terminal, 6,
6a is a power terminal, 61 and 61a are conducting wires, 62 is an insulator, 63 is a sheath, 7 is a printed wiring board, 8 is a radio wave absorber, and 9 is a support body.

Claims (1)

【特許請求の範囲】[Claims] 1 複数の半導体装置を直列に接続することで所
望の利得を得る多段構成の増幅器を収納し金属か
らなる筐体の壁を貫通して設けた電源供給用端子
を有し、該端子の導線に該導線の周囲の一部を覆
う電波吸収体を該壁に隣接させて被せ、該端子部
で該筐体の内外間を漏洩するマイクロ波を低減さ
せるようにしたことを特徴とするマイクロ波モジ
ユール。
1 It houses a multi-stage amplifier that obtains a desired gain by connecting a plurality of semiconductor devices in series, and has a power supply terminal provided through the wall of a metal case, and the conductor of the terminal is connected to the power supply terminal. A microwave module characterized in that a radio wave absorber covering a part of the periphery of the conductive wire is placed adjacent to the wall to reduce microwaves leaking between the inside and outside of the casing at the terminal portion. .
JP3782784A 1984-02-29 1984-02-29 Microwave module Granted JPS60182201A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3782784A JPS60182201A (en) 1984-02-29 1984-02-29 Microwave module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3782784A JPS60182201A (en) 1984-02-29 1984-02-29 Microwave module

Publications (2)

Publication Number Publication Date
JPS60182201A JPS60182201A (en) 1985-09-17
JPH0155761B2 true JPH0155761B2 (en) 1989-11-27

Family

ID=12508356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3782784A Granted JPS60182201A (en) 1984-02-29 1984-02-29 Microwave module

Country Status (1)

Country Link
JP (1) JPS60182201A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04113724A (en) * 1990-09-03 1992-04-15 Matsushita Electric Ind Co Ltd Microconverter for satellite communication
JPH09116301A (en) * 1995-10-16 1997-05-02 Nec Corp Hic module

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52141546A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Mounting unit for diode of microwave circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52141546A (en) * 1976-05-20 1977-11-25 Matsushita Electric Ind Co Ltd Mounting unit for diode of microwave circuit

Also Published As

Publication number Publication date
JPS60182201A (en) 1985-09-17

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