JPH02100344A - Semiconductor device for microwave use - Google Patents
Semiconductor device for microwave useInfo
- Publication number
- JPH02100344A JPH02100344A JP63252677A JP25267788A JPH02100344A JP H02100344 A JPH02100344 A JP H02100344A JP 63252677 A JP63252677 A JP 63252677A JP 25267788 A JP25267788 A JP 25267788A JP H02100344 A JPH02100344 A JP H02100344A
- Authority
- JP
- Japan
- Prior art keywords
- cap
- frame
- center
- semiconductor element
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 239000002184 metal Substances 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 19
- 230000008878 coupling Effects 0.000 abstract description 8
- 238000010168 coupling process Methods 0.000 abstract description 8
- 238000005859 coupling reaction Methods 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 7
- 239000010949 copper Substances 0.000 description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005288 electromagnetic effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
- H01L2924/30111—Impedance matching
Landscapes
- Waveguides (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は、ストリップ線路と接続された半導体素子を
収納して構成されるマイクロ波用半導体装置の改良に関
する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an improvement in a microwave semiconductor device configured to house a semiconductor element connected to a strip line.
（従来の技術）
ＧａＡＳＦＥＴによるマイクロ波用半導体素子は、広い
周波数領域を持ち良好な高周波特性を示すので、近年広
範囲に使用されている。特にＳバンド（２，７〜３．３
ＧＨｚ）以上の周波数帯域ではいわゆるＳｉバイポーラ
トランジスタと比較し、より良好な高周波特性を承り。(Prior Art) Microwave semiconductor devices using GaASFETs have been widely used in recent years because they have a wide frequency range and exhibit good high frequency characteristics. Especially S band (2,7~3.3
Compared to so-called Si bipolar transistors, it has better high-frequency characteristics in the frequency band above GHz).
従来、ＧａＡｓ［ｔＥＴ等のマ、イク１１波川２ｒ脣休
素子を使用した装置には、第４図ないし第５図に示した
構成のものがある。Conventionally, there is a device using a matrix element such as GaAs [tET, etc., which has a configuration shown in FIGS. 4 and 5.
即ち、第４図はその外観を示した斜視図、第５図は断面
図を示すもので、銅等の金属製基台１の上に同じく銅等
の金属からなる枠状のフレーム２が外囲器として構成さ
れ固定される。That is, FIG. 4 is a perspective view showing the external appearance, and FIG. 5 is a cross-sectional view, in which a frame-shaped frame 2 made of metal such as copper is placed on a base 1 made of metal such as copper. It is configured and fixed as an enclosure.
前記フレーム２枠内の前記基台１上には、キャリアプレ
ート３が収納され、このキャリアプレート３の中央部に
ＧａＡｓＦＥＴ等の半導体素子４が載置される。半導体
索子４の両側には、図示しない外部回路とのインピーダ
ンス整合用として、誘電体基板５上に形成されたストリ
ップ線路５ａが接続椙成される。A carrier plate 3 is housed on the base 1 within the frame 2, and a semiconductor element 4 such as a GaAsFET is placed in the center of the carrier plate 3. Strip lines 5a formed on a dielectric substrate 5 are connected to both sides of the semiconductor cord 4 for impedance matching with an external circuit (not shown).
前記半導体素子４と各ストリップ線路５ａ間、ストリッ
プ線路５ａ内の回路間及びストリップ線路５ａと中継端
子５ｂ間は、夫々金ワイヤ６ボンデイングにより接続さ
れる。The semiconductor element 4 and each strip line 5a, the circuits within the strip line 5a, and the strip line 5a and the relay terminal 5b are connected by gold wire 6 bonding.
また中継端子５ｂには図示しない外部回路との接続用端
子７が接続される。なお、中継端子５ｂと基台１及びフ
レーム２との間には絶縁性を確保するため、夫々誘電体
からなる絶縁板５ｃ、 ２ａを介在させている。Further, a terminal 7 for connection to an external circuit (not shown) is connected to the relay terminal 5b. Note that insulating plates 5c and 2a each made of a dielectric material are interposed between the relay terminal 5b and the base 1 and frame 2 to ensure insulation.
前記フレーム２上には、前記半導体素子４及びストリッ
プ線路５ａを覆うように銅等からなる板状のキャップ８
が載置固定され、半導体素子４を含む回路を高周波的に
遮断し、不要波信号の漏洩あるいは混入を防止している
。A plate-shaped cap 8 made of copper or the like is provided on the frame 2 to cover the semiconductor element 4 and the strip line 5a.
is mounted and fixed, and blocks the circuit including the semiconductor element 4 at high frequency, thereby preventing leakage or mixing of unnecessary wave signals.
なお、基台１にはねじ等ににる取付は用に切込み１ａが
設けられている。Note that the base 1 is provided with a notch 1a for mounting with screws or the like.
このような従来のマイクロ波半導体装置は、比較的周波
数の低いＳバンド等において、ワイヤ６はインダクタと
しての性格を持たけ、設計上も比較的長いループ状に形
成し接続することが多い。In such a conventional microwave semiconductor device, the wire 6 has the character of an inductor in a relatively low frequency band such as the S band, and is often connected by being formed into a relatively long loop in terms of design.
半導体素子４とストリップ線路５ａとの間の接続ワイヤ
６、あるいはスｌ−リップ線路５８回路内のワイヤ６は
、長さが長くなると上方に脹らみを持つのでキャップ８
との間隔が狭くなり、両者間に電磁的結合が生じ、キャ
ップ８の有無で装置の電気的特性に差異が生じたり、あ
るいはキャップ装着により電気的特性が劣化するという
現象が発生した。The connection wire 6 between the semiconductor element 4 and the strip line 5a, or the wire 6 in the slip line 58 circuit, swells upward as the length increases, so the cap 8
The gap between the cap 8 and the cap 8 becomes narrower, and electromagnetic coupling occurs between the two, resulting in a phenomenon in which the electrical characteristics of the device differ depending on the presence or absence of the cap 8, or the electrical characteristics deteriorate due to the attachment of the cap.
例えば、３ＧＨｚ帯で出力１０−程度の出力特性下で、
フレーム２の一辺が１０ｍｍ四方、厚ざｄがｌｌｎｍ程
度の形状とした装置の場合、キャップ８装着後に１ｄＢ
もの電力利得の劣化が生じた。これを防止するには、新
たにフレームの形状、特に厚さｄを従来の１ｍｍ程度よ
り厚くし容器としての大きさを大とすることによって電
磁的影響を受けないようにすることも考えられる。しか
し、フレーム２の厚さや大きさは、予め装置にお（）る
機械的強度、特に接続用端子７が接続される中継端子５
ｂ及びその絶縁板２ａ、 ５ｃへ与える応力の影響を考
慮して設計されてあり、これを変更し容器を大きり？ｌ
−ることは困難であった。For example, under the output characteristics of about 10- in the 3 GHz band,
In the case of a device in which the frame 2 is 10 mm square on each side and the thickness d is approximately llnm, 1 dB after the cap 8 is attached.
However, a degradation of the power gain occurred. In order to prevent this, it is conceivable that the shape of the frame, especially the thickness d, be made thicker than the conventional one of about 1 mm to increase the size of the container so that it will not be affected by electromagnetic effects. However, the thickness and size of the frame 2 are determined in advance by considering the mechanical strength of the device, especially the relay terminal 5 to which the connection terminal 7 is connected.
b, and its insulating plates 2a and 5c, and was designed by changing this to make the container larger. l
- It was difficult to do so.
（発明が解決しようとする課題）
以上のように、従来のマイクロ波半導体装置は、装置内
のリード線とキャップとの間隔が狭く、リード線とキャ
ップ間に生ずる電磁的結合により、電気的特性への影響
は避りられなかった。(Problems to be Solved by the Invention) As described above, in the conventional microwave semiconductor device, the distance between the lead wire and the cap inside the device is narrow, and the electromagnetic coupling that occurs between the lead wire and the cap causes the electrical characteristics to deteriorate. impact was unavoidable.
そこでこの発明は、リード線とキャップとの電磁的結合
を少なくし、高周波特性の安定したマイクし１波用半導
体装置を提供することを特徴とする。Accordingly, the present invention is characterized in that it provides a single-wave microphone semiconductor device that reduces electromagnetic coupling between the lead wire and the cap and has stable high frequency characteristics.
［発明の構成］
（課題を解決するための手段）
この発明のマイクロ波用半導体装置は、金属製基台と、
この基台上に載置された枠状の金属製フレームと、この
金属製フレームに囲まれた中のほぼ中央部に位置し前記
基台上に取着されるマイクロ波用半導体素子と、この半
導体素子に接続され前記フレーム内にあって半導体素子
を中央に両側に配置されるストリップ線路と、このスト
リップ線路と前記半導体素子とを覆うように前記フレー
ムに取付けられ中央部において外側に向け高さが約２．
５ｍｍ程度の凸部を形成した金属製ギ１ツブとを具備す
ることを特徴とする。[Structure of the Invention] (Means for Solving the Problems) A microwave semiconductor device of the present invention includes a metal base,
A frame-shaped metal frame placed on this base; a microwave semiconductor element located approximately in the center surrounded by this metal frame and mounted on the base; a strip line connected to the semiconductor element, located within the frame and arranged on both sides with the semiconductor element in the center; is about 2.
It is characterized by comprising a metal hook having a protrusion of about 5 mm.
（作 用）
この発明装置は、金属製キャップに、中央部において外
側に向〔プだ凸部を形成したことによって、半導体素子
並びにス１へリップ線路に接続されたワイヤと前記キャ
ップとの間隔が広がり、電磁的結合を少なく押えたもの
であり、安定した高周波特性が得られるものである。(Function) The device of the present invention has a metal cap formed with a convex portion facing outward in the center, thereby reducing the distance between the cap and the wire connected to the semiconductor element and the slip line. is widened, electromagnetic coupling is suppressed to a minimum, and stable high frequency characteristics can be obtained.
（実施例）
以下、この発明によるマイクロ波用半導体装置の実施例
を図面を参照し詳細に説明す゛る。第１図ないし第３図
はこの発明ににる装置の一実施例を示すもので、第１図
は仝休を示す外観図、第２図は第１図に示す装置でキャ
ップを取外した状態を示す主要部の平面図、第３図は同
じく第１図に示した装置の断面図である。(Embodiments) Hereinafter, embodiments of the microwave semiconductor device according to the present invention will be described in detail with reference to the drawings. Figures 1 to 3 show an embodiment of the device according to the present invention, with Figure 1 being an external view showing the rest state, and Figure 2 showing the device shown in Figure 1 with the cap removed. FIG. 3 is a sectional view of the device similarly shown in FIG. 1.
なお、第１図ないし第３図において、第４図ないし第５
図と同一構成には同一符号を付して詳細な説明を省略す
る。In addition, in Figures 1 to 3, Figures 4 to 5
Components that are the same as those in the figures are given the same reference numerals and detailed explanations will be omitted.
即ら、第１図ないし第３図において、銅等の金属製基台
１の上に同じく銅等の枠状金属製フレーム２が載置され
る。That is, in FIGS. 1 to 3, a frame-shaped metal frame 2 made of copper or the like is placed on a metal base 1 made of copper or the like.
フレーム２枠内に、銅などの金属からなるキャリアプレ
ー］へ３が収納固定され、このキャリアプレー１へ３の
中央部にはＧａＡＳｒ［Ｔ等のチップ状のマイクロ波用
半導体素子４が載置される。半導体素子４を中央に、前
記キャリアプレート３上には誘電体基板５が載置され、
この誘電体基板５上には前記半導体素子４とのインピー
ダンス整合を図、るべくストリップ線路５ａか形成され
る。ストリップ線路５ａの他の回路との接続部には中継
端子５ｂを介して接続用端子７が接続される。Within the frame 2, a carrier plate 3 made of metal such as copper is housed and fixed, and a chip-shaped microwave semiconductor element 4 such as GaASr[T] is placed in the center of the carrier plate 1. be done. A dielectric substrate 5 is placed on the carrier plate 3 with the semiconductor element 4 in the center,
On this dielectric substrate 5, a strip line 5a is preferably formed for impedance matching with the semiconductor element 4. A connection terminal 7 is connected to a connection portion of the strip line 5a with another circuit via a relay terminal 5b.
なａ３、中継端子５ｂとＭ台１及びフレーム２との間に
は絶縁性を確保づ−るため、従来と同様に夫々誘電体か
らなる絶縁板５ｃ、２ａを介在させている。In order to ensure insulation between the relay terminal 5b and the M stand 1 and frame 2, insulating plates 5c and 2a each made of a dielectric material are interposed as in the conventional case.
そこで、前記フレーム２上には、中央部において外側に
向かって高さが約２．５ｍｍ程度の凸部８ａを形成した
金属製キャップ８が載置固定される。フレーム２は従来
と同様に銅等のＳ電性部材からなり、凸部８ａは、中に
収納された半導体素子４及びストリップ線路５ａにお（
ブる接続ワイヤ６の先端部との間隔を広くする役割を持
つものである。Therefore, a metal cap 8 is mounted and fixed on the frame 2, and has a protrusion 8a having a height of about 2.5 mm extending outward in the central portion. The frame 2 is made of an S-conductive material such as copper as in the past, and the convex portion 8a is connected to the semiconductor element 4 housed therein and the strip line 5a.
This has the role of widening the distance from the tip of the connecting wire 6.
この発明装置は、以上のにうに構成され、接続ワイヤ６
とキャップ８との間の間隔が凸部８ａの存在により大き
くなるので、相互の電磁的結合度は小さくなり、キャッ
プ装６前後の電気的１ｈ性は殆ど変化しないように構成
できる。This inventive device is constructed as described above, and has connecting wires 6
Since the distance between the cap 8 and the cap 8 is increased due to the presence of the convex portion 8a, the degree of mutual electromagnetic coupling is reduced, and the structure can be made so that the electrical properties before and after the cap assembly 6 hardly change.
因みに、従来と同一大きさ及び形状のフレーム２におい
て、キャップ８の凸部の高さ１［が約２，５ｍｍのとき
、前述と同一条件下において従来１ｄＢの電力特性劣化
に対し、０．１〜０．２ｄＢ程度に減少し殆ど測定誤差
範囲に押えることができた。Incidentally, in a frame 2 of the same size and shape as the conventional one, when the height 1 of the convex part of the cap 8 is about 2.5 mm, the power characteristic deterioration of 1 dB in the conventional case under the same conditions as mentioned above is 0.1 It decreased to about 0.2 dB, and was able to keep it almost within the measurement error range.
なお、キャップ８の凸部の高さ１１を２ ＩＩＩ Ｉ１
１程度とした結果は０．５〜０．６ｄ１３の劣化となり
若干影響が残ることが分った１、また、ギ１ノツプ８の
祠′ｉＱはフレームとの剥離や奇生インピーダンス発生
防止のため、フレームの熱膨張係数と同じかあるいはそ
れに近い材質の金属を選択するのか望ましい。In addition, the height 11 of the convex part of the cap 8 is 2 III I1
It was found that the result of setting it to about 1 was a deterioration of 0.5 to 0.6 d13, which left a slight influence.1.In addition, the shrine 'iQ of Gi 1 Nop 8 was designed to prevent separation from the frame and the occurrence of strange impedance. It is desirable to select a metal whose thermal expansion coefficient is the same as or close to that of the frame.
［発明の効果］
この発明によるマイクロ波用半導体装置は、キャップの
中央部に凸部を形成したことにより接続ワイヤとキャッ
プ間の間隔は広がり、電磁的結合度が少なく、マイクロ
波において安定した特性が得られるしのでおり、実用上
の効果大である。[Effects of the Invention] The microwave semiconductor device according to the present invention has a convex portion formed in the center of the cap, which increases the distance between the connecting wire and the cap, reduces the degree of electromagnetic coupling, and provides stable characteristics in microwaves. can be obtained, which has a great practical effect.
第１図はこの発明によるマイクロ波用半導体装置の一実
施例を示り外観斜視図、第２図は第１図に示づ装置でキ
ャップを取外して要部を示す平面図、第３図は同じく第
１図にポリ−装置の中央部を横断して見た断面図、第４
図は従来のマイクロ波用半導体装置を示す斜視図、第５
図は第４図に示す装置の中央部を横断して児た断面図で
ある。
１・・・金属製基台
２・・・金属製フレーム
４・・・マイクロ波用半導体素子
５ａ・・・ストリップ線路
７・・・接続用端子
８・・・金属製キャップ
代理人 弁理士 大 胡 曲 夫
第 １ 図
第 ２ 図
第 ３ 図FIG. 1 shows an external perspective view of an embodiment of a microwave semiconductor device according to the present invention, FIG. 2 is a plan view showing the main parts of the apparatus shown in FIG. 1 with the cap removed, and FIG. Similarly, Fig. 1 is a sectional view taken across the center of the poly-device, and Fig. 4 is
The figure is a perspective view showing a conventional microwave semiconductor device.
The figure is a cross-sectional view across the center of the device shown in FIG. 4. 1...Metal base 2...Metal frame 4...Microwave semiconductor element 5a...Strip line 7...Connection terminal 8...Metal cap Agent Patent attorney Ogo Figure 1 Figure 2 Figure 3
Claims (1)
フレームと、この金属製フレームに囲まれた中のほぼ中
央部に位置し前記基台上に取着されるマイクロ波用半導
体素子と、この半導体素子に接続され前記フレーム内に
あって半導体素子を中央に両側に配置されるストリップ
線路と、このストリップ線路と前記半導体素子とを覆う
ように前記フレームに取付けられ中央部において外側に
向け高さが約２．５ｍｍ程度の凸部を形成した金属製キ
ャップとを具備するマイクロ波用半導体装置。A metal base, a frame-shaped metal frame placed on the base, and a microwave located approximately in the center surrounded by the metal frame and mounted on the base. a semiconductor element connected to the semiconductor element, a strip line disposed within the frame with the semiconductor element in the center, and a central portion attached to the frame so as to cover the strip line and the semiconductor element; A microwave semiconductor device comprising: a metal cap having a convex portion with a height of approximately 2.5 mm directed outward;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63252677A JPH02100344A (en) | 1988-10-06 | 1988-10-06 | Semiconductor device for microwave use |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63252677A JPH02100344A (en) | 1988-10-06 | 1988-10-06 | Semiconductor device for microwave use |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02100344A true JPH02100344A (en) | 1990-04-12 |
Family
ID=17240702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63252677A Pending JPH02100344A (en) | 1988-10-06 | 1988-10-06 | Semiconductor device for microwave use |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02100344A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04256204A (en) * | 1991-02-08 | 1992-09-10 | Nec Yamagata Ltd | Semiconductor device |
| JP2017054893A (en) * | 2015-09-08 | 2017-03-16 | 株式会社東芝 | High-frequency semiconductor device |
-
1988
- 1988-10-06 JP JP63252677A patent/JPH02100344A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04256204A (en) * | 1991-02-08 | 1992-09-10 | Nec Yamagata Ltd | Semiconductor device |
| JP2017054893A (en) * | 2015-09-08 | 2017-03-16 | 株式会社東芝 | High-frequency semiconductor device |
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