JPH0149786B2 - - Google Patents

Info

Publication number
JPH0149786B2
JPH0149786B2 JP7903781A JP7903781A JPH0149786B2 JP H0149786 B2 JPH0149786 B2 JP H0149786B2 JP 7903781 A JP7903781 A JP 7903781A JP 7903781 A JP7903781 A JP 7903781A JP H0149786 B2 JPH0149786 B2 JP H0149786B2
Authority
JP
Japan
Prior art keywords
electron beam
vapor deposition
evaporation
guide plate
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP7903781A
Other languages
Japanese (ja)
Other versions
JPS57194252A (en
Inventor
Makoto Nagao
Akira Nahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Priority to JP7903781A priority Critical patent/JPS57194252A/en
Priority to DE19823204337 priority patent/DE3204337A1/en
Publication of JPS57194252A publication Critical patent/JPS57194252A/en
Publication of JPH0149786B2 publication Critical patent/JPH0149786B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates

Description

【発明の詳細な説明】 本発明は真空蒸着等に使用する蒸着装置、特に
電子ビームによつて蒸着材料を加熱蒸発させる蒸
着装置の改良に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a vapor deposition apparatus used for vacuum vapor deposition and the like, and particularly in a vapor deposition apparatus that heats and evaporates a vapor deposition material using an electron beam.

電子ビームを加熱手段として用いる蒸着装置
は、真空蒸着、イオンプレーテイング、スパツタ
リング等各種の蒸着法において使用されている
が、この種の装置では蒸発した蒸着材料のうち、
被蒸着物に蒸着される材料は極く一部であるため
蒸着効率が悪いという難点がある。例えば被蒸着
面を蒸気流に対して斜めに配した斜め蒸着では、
蒸着効率は約1〜5%と極めて低く、材料の損失
が大きい。
Vapor deposition apparatuses that use electron beams as heating means are used in various vapor deposition methods such as vacuum evaporation, ion plating, and sputtering.
The problem is that only a small portion of the material is deposited on the object, so the deposition efficiency is low. For example, in oblique evaporation where the surface to be evaporated is placed obliquely to the vapor flow,
The deposition efficiency is extremely low, about 1-5%, and material loss is large.

本発明者等はこの点に鑑み、蒸着材料を収容し
た容器と被蒸着物との間に蒸気流を有効に被蒸着
物に向けて案内する反射案内板を設け、この反射
案内板により蒸気流を反射して案内するようにし
た装置を発明し既に特許出願した。
In view of this point, the present inventors installed a reflective guide plate between a container containing a vapor deposition material and an object to be deposited to effectively guide the vapor flow toward the object to be vapor deposited, and this reflective guide plate allows the vapor to flow. He invented a device that reflects and guides light, and has already applied for a patent.

これは、蒸気流の通路に沿つて設けられた案内
板が、蒸着材料の蒸発温度より高いある温度(こ
の温度を「反射温度」ということにする)以上に
加熱されると、この案内板が蒸気流を反射する作
用を示すことを発見したことに基づいて出願され
たもので、表面に蒸着材料を付着させることな
く、蒸気流を反射する現象を利用して蒸気流を効
率よく被蒸着物に向けるようにしたものである。
This is because when a guide plate installed along the vapor flow path is heated to a certain temperature (this temperature is called the "reflection temperature") that is higher than the evaporation temperature of the vapor deposition material, the guide plate This application was filed based on the discovery that the vapor flow reflects the vapor flow, and the vapor flow can be efficiently transferred to the deposition target by utilizing the phenomenon of reflecting the vapor flow without attaching the vapor deposition material to the surface. It was designed to be directed towards.

ここで“反射”とは、反射板に飛来した蒸気流
粒子が結果的に反射板に付着することなく、あた
かも反射されるかの如く、蒸気流粒子の進路変更
を行なうことを意味し、必ずしも、光学的な鏡面
反射の如き反射を意味するものではない。
Here, "reflection" means changing the course of the vapor flow particles as if they were reflected without actually adhering to the reflection plate, and does not necessarily mean , does not imply reflection such as optical specular reflection.

この方法は、斜め蒸着における従来の抵効率
(1%)を数10%にまで高める画期的なものであ
るが、電子ビームによつて蒸着材料を加熱、蒸発
させるときには電子ビームの入射光路を案内板が
遮ることになり、電子ビームを入射させにくいと
いう問題がある。この問題を解決する方法として
一つには電子ビームを曲げて反射案内板の上部開
口部の真上から蒸発材料に照射する方法がある
が、このように電子ビームを大きく曲げるとビー
ムが乱れて蒸発レートが低下してしまう。また、
反射案内板に孔をあけて、その孔から電子ビーム
を入射させる方法もあるが、電子ビームは横方向
に往復走査するものであるから、横に長い孔(ス
リツト)をあけなければならず、この長い孔から
蒸気流が逃げてしまい、蒸着効率が落ちるという
問題がある。
This method is revolutionary in increasing the conventional resistivity (1%) in oblique evaporation to several tens of percent, but when heating and evaporating the evaporation material with an electron beam, the incident optical path of the electron beam must be changed. There is a problem in that the guide plate blocks the electron beam, making it difficult for the electron beam to enter. One way to solve this problem is to bend the electron beam and irradiate the evaporation material from directly above the upper opening of the reflective guide plate. The evaporation rate will decrease. Also,
There is also a method of drilling a hole in the reflective guide plate and letting the electron beam enter the hole, but since the electron beam scans back and forth in the horizontal direction, a long horizontal hole (slit) must be drilled. There is a problem in that the vapor flow escapes through these long holes, reducing the deposition efficiency.

斜め蒸着では被蒸着物のテープベース等を径の
大きいクーリングキヤンに沿つて送るため、蒸着
材料を収容する容器(るつぼ、ハース等)の真上
から電子ビームを入れることができない。したが
つて、上記のような方法を取らざるを得ず、それ
には上記のような難点があり、実用上解決されね
ばならない問題となつている。
In oblique evaporation, the tape base of the object to be evaporated is sent along a cooling can with a large diameter, so it is not possible to introduce an electron beam from directly above the container (crucible, hearth, etc.) containing the evaporation material. Therefore, the above-mentioned method has to be adopted, but it has the above-mentioned difficulties and has become a problem that must be solved in practice.

本発明は、上記のような問題を効果的に解決す
る電子ビーム蒸着装置を提供することを目的とす
るものである。
SUMMARY OF THE INVENTION An object of the present invention is to provide an electron beam evaporation apparatus that effectively solves the above problems.

本発明の蒸着装置は、電子ビームの入射方向に
おける反射案内板の一部を外方へ10度〜60度傾け
て電子ビームが蒸着材料の表面に対して垂直の方
向から10度以上傾いた方向から入射できるように
したことを特徴とするものである。
In the vapor deposition apparatus of the present invention, a part of the reflection guide plate in the incident direction of the electron beam is tilted outward by 10 degrees to 60 degrees, so that the electron beam is directed in a direction tilted by 10 degrees or more from a direction perpendicular to the surface of the vapor deposition material. This is characterized by the fact that it can be incident from any direction.

上記範囲の角度だけ傾いた方向から電子ビーム
を入射させることにより、クーリングキヤンに遮
られることなく又、たとえ電子ビームを曲げるに
しても若干の角度偏向のみで電子ビームは蒸着材
料に入射することができる。また、上記の範囲の
角度の傾きであれば、反射案内板は外方へ傾いて
も、蒸気流を十分に被蒸着物へ向けて案内するこ
とが可能であり、大きい蒸着効率を維持すること
ができる。
By making the electron beam incident from a direction tilted by the angle in the above range, the electron beam will not be blocked by the cooling canister, and even if the electron beam is bent, it will be able to enter the evaporation material with only a slight angular deflection. can. Furthermore, if the angle is within the above range, even if the reflection guide plate is tilted outward, it is possible to sufficiently guide the vapor flow toward the object to be deposited, and maintain a high deposition efficiency. Can be done.

以下、図面と実験例によつて、本発明をさらに
詳細に説明する。
Hereinafter, the present invention will be explained in more detail with reference to drawings and experimental examples.

第1図はクーリングキヤン1に磁気テープの支
持体2を巻いて送りながら角度αで斜め蒸着をす
る電子ビーム蒸着装置の概略図を示すものであ
る。蒸着材料3はハース4の中に収容され、その
上に、垂直に立つた内側壁5aと、この内側壁5
aに対向して立ち、外方へ角度βだけ傾いた外側
壁5bと、内側壁5aと外側壁5bの両端間に垂
直に立つた対向する端壁5cとからなる反射案内
板が設けられている。第2図にこの反射案内板5
の斜視図を示す。
FIG. 1 is a schematic diagram of an electron beam evaporation apparatus that performs oblique evaporation at an angle α while feeding a magnetic tape support 2 wound around a cooling can 1. The vapor deposition material 3 is housed in the hearth 4, and on top of it there is an inner wall 5a standing vertically, and this inner wall 5.
A reflective guide plate is provided, which consists of an outer wall 5b that stands opposite to a and is inclined outward by an angle β, and an opposing end wall 5c that stands perpendicularly between both ends of the inner wall 5a and the outer wall 5b. There is. This reflective guide plate 5 is shown in Figure 2.
A perspective view of the figure is shown.

電子ビーム6は外方へ傾いた外側壁5bに沿つ
て蒸着材料3の表面に対して、垂直から角度γだ
け傾いた方向から入射することができ、クーリン
グキヤン1の外周に沿つて設けられた、蒸着用の
スリツト7aを有するシヤツター板7や、その近
辺に設置される膜厚計等の付帯設備8に遮られる
ことなく蒸着材料3に達することができる。
The electron beam 6 can be incident on the surface of the vapor deposition material 3 along the outwardly inclined outer wall 5b from a direction inclined by an angle γ from the vertical, and is provided along the outer periphery of the cooling can 1. , the vapor deposition material 3 can be reached without being obstructed by the shutter plate 7 having a slit 7a for vapor deposition, or by incidental equipment 8 such as a film thickness gauge installed near the shutter plate 7.

反射案内板5の形状は、第1図、第2図に示さ
れるものに限らず、第3図に示されるもののよう
に外側壁の上方部分5b′のみを外方へ傾けるよう
にしてもよい。
The shape of the reflective guide plate 5 is not limited to that shown in FIGS. 1 and 2, but may be such that only the upper portion 5b' of the outer wall is inclined outward, as shown in FIG. 3. .

外側壁の傾きの角度は、電子ビーム6が蒸着材
料面に対して10〜60度の範囲で入射するように開
くものであればよい。
The angle of inclination of the outer wall may be such that the electron beam 6 is incident on the surface of the vapor deposition material within a range of 10 to 60 degrees.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の電子ビーム蒸着装置の一例を
示す側断面図、第2図は第1図の例におけるハー
スと反射案内板を示す斜視図、第3図はハースと
反射案内板の他の例を示す側断面図である。 1……クーリングキヤン、2……磁気テープ支
持体、3……蒸着材料、4……ハース、5……反
射案内板、6……電子ビーム。
FIG. 1 is a side sectional view showing an example of the electron beam evaporation apparatus of the present invention, FIG. 2 is a perspective view showing the hearth and reflection guide plate in the example of FIG. 1, and FIG. It is a side sectional view showing an example. DESCRIPTION OF SYMBOLS 1... Cooling canister, 2... Magnetic tape support, 3... Vapor deposition material, 4... Hearth, 5... Reflection guide plate, 6... Electron beam.

Claims (1)

【特許請求の範囲】 1 蒸着材料を収容する容器、この容器に収容さ
れた蒸着材料に斜め上方から電子ビームを照射し
て蒸着材料を加熱し蒸発させる電子ビーム源、お
よび前記容器と被蒸着物との間にあつて蒸着材料
の蒸気流を反射する反射温度以上に加熱され、蒸
気流を被蒸着物へ向けて反射、案内する反射案内
板からなる電子ビーム蒸着装置において、 前期反射案内板の一部を外方へ10度〜60度傾け
て前記電子ビームが蒸着材料の表面に対して垂直
の方向から10度以上傾いた方向から入射可能にし
たことを特徴とする電子ビーム蒸着装置。
[Scope of Claims] 1. A container containing a vapor deposition material, an electron beam source that irradiates the vapor deposition material contained in the container with an electron beam from diagonally above to heat and evaporate the vapor deposition material, and the container and an object to be vaporized. In an electron beam evaporation apparatus consisting of a reflective guide plate that is heated above the reflection temperature to reflect the vapor flow of the evaporation material and reflects and guides the vapor flow toward the object to be deposited, An electron beam evaporation apparatus characterized in that a part of the apparatus is tilted outward by 10 degrees to 60 degrees so that the electron beam can be incident on the surface of the evaporation material from a direction tilted by 10 degrees or more from a direction perpendicular to the surface of the evaporation material.
JP7903781A 1981-02-10 1981-05-25 Vapor depositing device by electron beam Granted JPS57194252A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7903781A JPS57194252A (en) 1981-05-25 1981-05-25 Vapor depositing device by electron beam
DE19823204337 DE3204337A1 (en) 1981-02-10 1982-02-09 Process and apparatus for forming a thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7903781A JPS57194252A (en) 1981-05-25 1981-05-25 Vapor depositing device by electron beam

Publications (2)

Publication Number Publication Date
JPS57194252A JPS57194252A (en) 1982-11-29
JPH0149786B2 true JPH0149786B2 (en) 1989-10-26

Family

ID=13678712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7903781A Granted JPS57194252A (en) 1981-02-10 1981-05-25 Vapor depositing device by electron beam

Country Status (1)

Country Link
JP (1) JPS57194252A (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59222578A (en) * 1983-05-30 1984-12-14 Hitachi Condenser Co Ltd Vapor deposition device
JPS63204513A (en) * 1987-02-20 1988-08-24 Fuji Photo Film Co Ltd Apparatus for producing magnetic recording medium
JP5620146B2 (en) 2009-05-22 2014-11-05 三星ディスプレイ株式會社Samsung Display Co.,Ltd. Thin film deposition equipment
KR101127575B1 (en) 2009-08-10 2012-03-23 삼성모바일디스플레이주식회사 Apparatus for thin film deposition having a deposition blade
KR101084194B1 (en) 2009-08-10 2011-11-17 삼성모바일디스플레이주식회사 Apparatus for thin film deposition having deposition blades
US8696815B2 (en) 2009-09-01 2014-04-15 Samsung Display Co., Ltd. Thin film deposition apparatus
KR101084184B1 (en) 2010-01-11 2011-11-17 삼성모바일디스플레이주식회사 Apparatus for thin layer deposition
KR101760897B1 (en) 2011-01-12 2017-07-25 삼성디스플레이 주식회사 Deposition source and apparatus for organic layer deposition having the same

Also Published As

Publication number Publication date
JPS57194252A (en) 1982-11-29

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