JPH0144152B2 - - Google Patents
Info
- Publication number
- JPH0144152B2 JPH0144152B2 JP58170587A JP17058783A JPH0144152B2 JP H0144152 B2 JPH0144152 B2 JP H0144152B2 JP 58170587 A JP58170587 A JP 58170587A JP 17058783 A JP17058783 A JP 17058783A JP H0144152 B2 JPH0144152 B2 JP H0144152B2
- Authority
- JP
- Japan
- Prior art keywords
- paste
- resistive layer
- organic compound
- thermal head
- metal organic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002902 organometallic compounds Chemical class 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- 239000010953 base metal Substances 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 239000011651 chromium Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- 229910000510 noble metal Inorganic materials 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 claims description 3
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 claims description 3
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 claims description 3
- 150000002736 metal compounds Chemical class 0.000 claims description 3
- 150000002894 organic compounds Chemical class 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- SKWCWFYBFZIXHE-UHFFFAOYSA-K indium acetylacetonate Chemical compound CC(=O)C=C(C)O[In](OC(C)=CC(C)=O)OC(C)=CC(C)=O SKWCWFYBFZIXHE-UHFFFAOYSA-K 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 235000007173 Abies balsamea Nutrition 0.000 description 6
- 239000004857 Balsam Substances 0.000 description 6
- 244000018716 Impatiens biflora Species 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000010304 firing Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 4
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 3
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 2
- 241000196324 Embryophyta Species 0.000 description 2
- 239000001293 FEMA 3089 Substances 0.000 description 2
- 239000000020 Nitrocellulose Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- PHFQLYPOURZARY-UHFFFAOYSA-N chromium trinitrate Chemical compound [Cr+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O PHFQLYPOURZARY-UHFFFAOYSA-N 0.000 description 2
- 238000013329 compounding Methods 0.000 description 2
- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 2
- 239000000171 lavandula angustifolia l. flower oil Substances 0.000 description 2
- 229920001220 nitrocellulos Polymers 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000010668 rosemary oil Substances 0.000 description 2
- 229940058206 rosemary oil Drugs 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000000341 volatile oil Substances 0.000 description 2
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 241000779819 Syncarpia glomulifera Species 0.000 description 1
- RSWGJHLUYNHPMX-ONCXSQPRSA-N abietic acid Chemical compound C([C@@H]12)CC(C(C)C)=CC1=CC[C@@H]1[C@]2(C)CCC[C@@]1(C)C(O)=O RSWGJHLUYNHPMX-ONCXSQPRSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000010624 camphor oil Substances 0.000 description 1
- 229960000411 camphor oil Drugs 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- -1 gold-platinum organometallic compound Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 239000001739 pinus spp. Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- CLSUSRZJUQMOHH-UHFFFAOYSA-L platinum dichloride Chemical compound Cl[Pt]Cl CLSUSRZJUQMOHH-UHFFFAOYSA-L 0.000 description 1
- 239000010666 rose oil Substances 0.000 description 1
- 235000019719 rose oil Nutrition 0.000 description 1
- 150000003304 ruthenium compounds Chemical class 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000344 soap Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229940036248 turpentine Drugs 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/315—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material
- B41J2/32—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of heat to a heat sensitive printing or impression-transfer material using thermal heads
- B41J2/335—Structure of thermal heads
Landscapes
- Electronic Switches (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Non-Adjustable Resistors (AREA)
Description
本発明はサーマルヘツドの製法に係り、特にそ
れの厚膜抵抗層の形成方法に関する。
従来の厚膜抵抗層材料としては、酸化ルテニウ
ムや他のルテニウム化合物とガラスフリツトとの
混合物、または銀−パラジウム合金とガラスフリ
ツトとの混合物などがある。
ところが、これら従来の厚膜抵抗層材料では、
金属化合物とガラスフリツトというある程度の大
きさの粒径を持つた粒子が含有されているため、
これらの材料からなる厚膜抵抗層形成用のペース
トをスクリーン印刷により基板上に印刷して行な
つた場合、焼成後の膜厚を薄くしようとしてもそ
れには限界があり、所望の抵抗値を維持したまま
出来るだけ膜厚を薄くしようとしても６〜10μｍ
程度が限度である。
そのため、フオトリソグラフイを用いてエツチ
ングによりパターンニングを行なつても、膜厚が
大きいため、それほど細かなパターンを切ること
ができず、その結果としてドツト密度の高いきめ
細かなプリントを可能とするようなサーマルヘツ
ドを形成することができないという欠点があつ
た。
本発明の目的は、上記従来技術の欠点を解消
し、微細なパターンを形成することができる厚膜
抵抗層を量産性よく生産でき、ドツト密度の高い
プリントが可能なサーマルヘツドの製法を提供す
ることにある。
この目的を達成するため、本発明は、貴金属有
機化合物と、卑金属有機化合物と、これら有機化
合物を溶解する有機液体との混合組成物から厚膜
抵抗層形成用ペーストを基板上に塗布し焼成して
抵抗層を形成し、しかるのちその抵抗層をホトリ
ソグラフイで所望の形状にパターンニングしたこ
とを特徴とするものである。
本発明の製法によれば、厚膜抵抗層形成用のペ
ースト中に大きな粒径を持つ粒子が存在しないこ
とに加えてペースト中に有機成分が多いため、焼
成後の膜厚を1μｍ以下と著しく薄くすることが
でき、微細なパターンの形成が可能になる。
また、貴金属有機化合物の貴金属成分は大気中
で焼成後導電体成分となり、一方卑金属有機化合
物中の卑金属は焼成後金属酸化物となつて不導体
成分となるのでこれらの混合比率を変えることに
より任意の体積固有抵抗率を持つた抵抗層を形成
することができる。
本発明で用いられる貴金属有機化合物としては
金−白金有機金属化合物が好適である。この有機
化合物はバルサム、ロジン、テレビン油の混合樹
脂にイオウを作用して得た硫化樹脂と、塩化金な
らびに塩化合金の混合物を化学反応させることに
よつて得られる。前記バルサムとは種々の植物か
ら分泌される粘稠性の液体で、固形樹脂が揮発油
に溶解したものであり、代表的なものは松脂で、
それはカナダバルサム、ペルーバルサム、トール
バルサムなどがある。
本発明で用いられる卑金属有機化合物として
は、樹脂酸クロム、樹脂酸ビスマス、アルミニウ
ムアセチルアセトナート、インジウムアセチルア
セトナート、エトキシシランなどが用いられる。
前記樹脂酸クロムは、ロジンと硝酸クロムを反応
させた金属石ケンの１種で、主成分はアビエチン
酸クロムとα−ピマール酸クロムである。
本発明で用いられる有機液体（溶媒）として
は、ブチルカルビトール、ブチルアルビトール、
植物精油（ラベンダー油、樟脳油、ローズマリー
油、ローズ油、テレビン油）などがある。
本発明に係るペーストの厚膜スクリーン印刷性
を向上するため、ニトロセルロースなどを添加す
るとよい。
次に本発明の実施例について説明する。
カナダバルサム、ロジン、テレビン油の混合樹
脂にイオウを加え、加熱反応させて硫化樹脂を作
る。この樹脂と塩化金および塩化白金を、それぞ
れ金含有率が８重量％、白金含有率が４重量％に
なるように配合し、150〜170℃で加熱反応させて
金−白金有機金属化合物をつくる。この樹脂状化
合物をラベンダー油、ローズマリー油などの溶剤
に溶解し、金−白金含有率が６重量％になるよう
に調整する。こうして得られたものをペースト
とする。
一方、卑金属有機化合物として樹脂酸クロム、
アルミニウムアセチルアセトナート、エトキシシ
ランを用い、ニトロセルロースを添加し、ブチル
カルビトールやブチルカルビトールアセテートな
どに溶解して、ペーストをつくる。
ペーストならびにペーストの主要成分の含
有率を次の表１、表２に示す。
The present invention relates to a method for manufacturing a thermal head, and more particularly to a method for forming a thick film resistive layer thereon. Conventional thick film resistive layer materials include mixtures of ruthenium oxide or other ruthenium compounds with glass frit, or mixtures of silver-palladium alloys with glass frit. However, with these conventional thick film resistance layer materials,
Because it contains particles of a certain size, such as metal compounds and glass frit,
When paste for forming a thick film resistor layer made of these materials is printed on a substrate by screen printing, there is a limit to how thin the film can be after firing, and it is difficult to maintain the desired resistance value. Even if you try to make the film thickness as thin as possible, it will still be 6 to 10 μm.
The extent is the limit. Therefore, even if patterning is performed by etching using photolithography, the film thickness is large, so it is not possible to cut very fine patterns, and as a result, it is difficult to make fine prints with high dot density. The disadvantage was that it was not possible to form an accurate thermal head. It is an object of the present invention to provide a method for manufacturing a thermal head that eliminates the drawbacks of the above-mentioned conventional techniques, allows mass production of thick film resistive layers capable of forming fine patterns, and enables printing with high dot density. There is a particular thing. In order to achieve this object, the present invention applies a paste for forming a thick film resistive layer on a substrate from a mixed composition of a noble metal organic compound, a base metal organic compound, and an organic liquid that dissolves these organic compounds, and then bakes the paste. The method is characterized in that a resistive layer is formed using a method of manufacturing a resistor, and then the resistive layer is patterned into a desired shape using photolithography. According to the manufacturing method of the present invention, in addition to the absence of particles with large particle sizes in the paste for forming a thick film resistance layer, the paste contains many organic components, so the film thickness after firing is significantly reduced to 1 μm or less. It can be made thinner and allows the formation of fine patterns. In addition, the noble metal component of the noble metal organic compound becomes a conductor component after firing in the atmosphere, while the base metal in the base metal organic compound becomes a metal oxide and a nonconductor component after firing, so by changing the mixing ratio of these, it is possible to It is possible to form a resistive layer having a specific volume resistivity of . As the noble metal organic compound used in the present invention, a gold-platinum organic metal compound is suitable. This organic compound is obtained by chemically reacting a sulfurized resin obtained by reacting sulfur with a mixed resin of balsam, rosin, and turpentine, and a mixture of gold chloride and chloride alloy. The balsam is a viscous liquid secreted by various plants, and is a solid resin dissolved in volatile oil, the typical one being pine resin.
These include Canadian balsam, Peruvian balsam, and tall balsam. Examples of the base metal organic compound used in the present invention include chromium resinate, bismuth resinate, aluminum acetylacetonate, indium acetylacetonate, and ethoxysilane.
The chromium resinate is a type of metal soap made by reacting rosin with chromium nitrate, and its main components are chromium abietate and chromium α-pimarate. The organic liquid (solvent) used in the present invention includes butyl carbitol, butyl arbitol,
Plant essential oils include lavender oil, camphor oil, rosemary oil, rose oil, and turpentine oil. In order to improve the thick film screen printability of the paste according to the present invention, nitrocellulose or the like may be added. Next, examples of the present invention will be described. Sulfur is added to a mixed resin of Canadian balsam, rosin, and turpentine oil, and a sulfurized resin is created by heating and reacting. This resin is mixed with gold chloride and platinum chloride so that the gold content is 8% by weight and the platinum content is 4% by weight, respectively, and the mixture is heated and reacted at 150 to 170°C to produce a gold-platinum organometallic compound. . This resinous compound is dissolved in a solvent such as lavender oil or rosemary oil, and the gold-platinum content is adjusted to 6% by weight. The material thus obtained is made into a paste. On the other hand, chromium resinate as a base metal organic compound,
A paste is made by using aluminum acetylacetonate and ethoxysilane, adding nitrocellulose, and dissolving in butyl carbitol or butyl carbitol acetate. The contents of the paste and the main components of the paste are shown in Tables 1 and 2 below.
【表】【table】
【表】
このペーストとペーストを所定の割合に配
合し、よく混練して抵抗材ペーストをつくる。各
配合比の抵抗材ペーストを基板に厚膜スクリーン
法で印刷し、700〜850℃で焼成して得られた厚膜
抵抗層のシート抵抗値を測定した結果を第１図に
示す。図中のＡ点はペーストとペーストの配
合重量比が：＝１：４、Ｂ点は同様に２：
４、Ｃ点は３：４、Ｄ点は４：４、Ｅ点は４：
３、Ｆ点は４：２、Ｇ点は４：１、Ｈ点は４：０
のものの各抵抗層のシート抵抗値である。この図
から明らかなように、ペーストとペーストの
配合比を調整することにより、約30Ω〜200MΩ
までの極めて広範囲の抵抗値を有する抵抗層を得
ることができる。
なお、上記Ａ点からＨ点で示したペーストと
ペーストの各配合比における焼成後の各成分の
重量比は次の表３に示すとおりである。[Table] Mix these pastes in a predetermined ratio and knead them thoroughly to make a resistance material paste. FIG. 1 shows the results of measuring the sheet resistance values of the thick film resistive layers obtained by printing resistive material pastes of various compounding ratios on substrates by the thick film screen method and baking them at 700 to 850°C. At point A in the figure, the weight ratio of paste to paste is 1:4, and at point B, the ratio is 2:
4. Point C is 3:4, point D is 4:4, point E is 4:
3. F point is 4:2, G point is 4:1, H point is 4:0
This is the sheet resistance value of each resistance layer. As is clear from this figure, by adjusting the mixing ratio of paste and paste, approximately 30Ω to 200MΩ can be achieved.
It is possible to obtain a resistive layer having a very wide range of resistance values. The weight ratios of each component after firing at each paste-to-paste compounding ratio shown from point A to point H above are as shown in Table 3 below.
【表】
＊ クロム、アルミニウム、シリコンは焼成
後、酸化物となる。
第２図は、前記ペーストとペーストの配合
重量比が：＝４：４（Ｄ点）、４：３（Ｅ点）、
４：２（Ｆ点）の各抵抗層の温度係数（TCR）を
示す図で、各特性の抵抗層が得られる。
第３図は、各抵抗層におけるシート抵抗値の信
頼性を示す図である。すなわち、同図イは前記ペ
ーストとペーストの配合重量比が：＝
３：４、同図ロは４：４、同図ハは４：３、同図
ニは４：２、同図ホは４：１の各抵抗層のシート
抵抗値の経時変化ΔRを測定したものである。各
図とも曲線Ｘは耐湿試験（試験条件40℃、60％
RH、負荷330mW／mm2）、曲線Ｙは耐熱試験（試
験条件80℃、300mW／mm2）の特性値である。
この図から明らかなように、各組成の抵抗層と
も抵抗値の変化が極めて小さく、安定した高信頼
性の抵抗層が得られる。
第４図は本発明に係るサーマルヘツドの一部平
面図、第５図はその断面図である。アルミナから
なる絶縁基板１のほぼ全面に二酸化ケイ素からな
るアンダーグレーズ層２を50〜100μmの厚さで印
刷し、900〜1200℃で焼成し、次に電極３，３を
印刷して、700〜900℃で焼成する。しかるのち一
方の電極３から他方の電極３に掛るように前述の
厚膜抵抗層形成用ペーストをスクリーン印刷し、
700〜850℃で焼成して、その後ホトリソグラフイ
の技術でパターンニングして所望の形状の抵抗層
４を得る。
第６図イ，ロはこのようにして形成された抵抗
層の表面状態を示す図である。同図イ，ロは抵抗
層の任意の個所の表面状態を表わしており、イの
ものは膜厚Ｔが3400Å、ロのものは2700Åでいず
れの個所も表面粗さは200Å以下と極めて平滑で
寸法精度が高い。
本発明は、前述のような構成となつているため
抵抗値の変化が極めて小さく、安定した高信頼性
の抵抗層が量産性に優れた厚膜スクリーン印刷法
で形成可能である。
しかも、抵抗層の膜厚を従来に比べて著しく薄
くすることができるので、フオトリングラフイに
より微細なパターンを形成することができ、安価
な方法でドツト密度の高いサーマルヘツドを製造
することが可能となる。[Table] *Chromium, aluminum, and silicon are fired.
After that, it becomes an oxide.
Figure 2 shows that the blending weight ratio of the paste and paste is: = 4:4 (point D), 4:3 (point E),
This is a diagram showing the temperature coefficient (TCR) of each resistance layer of 4:2 (point F), and resistance layers with each characteristic are obtained. FIG. 3 is a diagram showing the reliability of sheet resistance values in each resistance layer. That is, in Figure A, the blending weight ratio of the paste and the paste is:=
The change over time ΔR in the sheet resistance value of each resistance layer was measured. It is something. In each figure, curve
RH, load 330 mW/mm 2 ), and curve Y is the characteristic value of the heat resistance test (test conditions 80°C, 300 mW/mm 2 ). As is clear from this figure, the change in resistance value of the resistance layer of each composition is extremely small, and a stable and highly reliable resistance layer can be obtained. FIG. 4 is a partial plan view of a thermal head according to the present invention, and FIG. 5 is a sectional view thereof. An underglaze layer 2 made of silicon dioxide is printed on almost the entire surface of an insulating substrate 1 made of alumina to a thickness of 50 to 100 μm, fired at 900 to 1200°C, then electrodes 3 are printed, Bake at 900℃. Thereafter, the thick film resistor layer forming paste described above is screen printed so as to extend from one electrode 3 to the other electrode 3.
The resistive layer 4 is baked at 700 to 850° C. and then patterned using photolithography to obtain a resistive layer 4 having a desired shape. FIGS. 6A and 6B are diagrams showing the surface condition of the resistive layer formed in this manner. Figures A and B show the surface conditions at arbitrary locations on the resistive layer. The film thickness T in A is 3400 Å, and in B 2700 Å, the surface roughness of both locations is extremely smooth with less than 200 Å. High dimensional accuracy. Since the present invention has the above-described structure, a stable and highly reliable resistance layer with extremely small change in resistance value can be formed by a thick film screen printing method which is excellent in mass production. Furthermore, since the thickness of the resistive layer can be made significantly thinner than in the past, fine patterns can be formed using photolithography, making it possible to manufacture thermal heads with high dot density at low cost. It becomes possible.
第１図は本発明に係るペーストを用いた各抵抗
層のシート抵抗値特性図、第２図はその抵抗層の
温度係数特性図、第３図イ〜ホはその抵抗層の信
頼特性図、第４図は本発明に係るサーマルヘツド
の一部平面図、第５図はそのサーマルヘツドの一
部断面図、第６図イ，ロはその抵抗層の表面粗さ
を示す図である。
１……絶縁基板、２……アンダグレーズ層、３
……電極、４……抵抗層。
FIG. 1 is a sheet resistance value characteristic diagram of each resistance layer using the paste according to the present invention, FIG. 2 is a temperature coefficient characteristic diagram of the resistance layer, and FIG. 3 A to H are reliability characteristic diagrams of the resistance layer. FIG. 4 is a partial plan view of a thermal head according to the present invention, FIG. 5 is a partial sectional view of the thermal head, and FIGS. 6A and 6B are diagrams showing the surface roughness of the resistive layer. 1... Insulating substrate, 2... Underglaze layer, 3
...electrode, 4...resistance layer.
Claims (1)
これら有機化合物を溶解する有機液体との混合組
成物からなる厚膜抵抗層形成用ペーストを基板上
に塗布し焼成して抵抗層を形成し、しかるのちそ
の抵抗層をホトリソグラフイで所望の形状にパタ
ーンニングしたことを特徴とするサーマルヘツド
の製法。 ２ 特許請求の範囲第１項記載において、前記貴
金属有機化合物が金−白金有機金属化合物である
ことを特徴とするサーマルヘツドの製法。 ３ 特許請求の範囲第１項記載において、前記卑
金属有機化合物が樹脂酸クロム、樹脂酸ビスマ
ス、アルミニウムアセチルアセトナート、インジ
ウムアセチルアセトナート、エトキシシランのグ
ループから選択された化合物であることを特徴と
するサーマルヘツドの製法。[Claims] 1. A noble metal organic compound, a base metal organic compound,
A thick film resistive layer forming paste made of a mixed composition with an organic liquid that dissolves these organic compounds is applied onto a substrate and baked to form a resistive layer, and then the resistive layer is shaped into a desired shape by photolithography. A method for manufacturing a thermal head characterized by patterning. 2. The method for producing a thermal head according to claim 1, wherein the noble metal organic compound is a gold-platinum organic metal compound. 3. In claim 1, the base metal organic compound is a compound selected from the group consisting of chromium resinate, bismuth resinate, aluminum acetylacetonate, indium acetylacetonate, and ethoxysilane. Thermal head manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58170587A JPS6063174A (en) | 1983-09-17 | 1983-09-17 | Manufacture of thermal head |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58170587A JPS6063174A (en) | 1983-09-17 | 1983-09-17 | Manufacture of thermal head |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6063174A JPS6063174A (en) | 1985-04-11 |
| JPH0144152B2 true JPH0144152B2 (en) | 1989-09-26 |
Family
ID=15907596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58170587A Granted JPS6063174A (en) | 1983-09-17 | 1983-09-17 | Manufacture of thermal head |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6063174A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07102708B2 (en) * | 1986-06-11 | 1995-11-08 | 松下電器産業株式会社 | Thermal head |
| JP2699381B2 (en) * | 1987-04-28 | 1998-01-19 | 富士ゼロックス株式会社 | Manufacturing method of resistor |
| JPH0755564B2 (en) * | 1988-06-29 | 1995-06-14 | 松下電器産業株式会社 | Thermal head and manufacturing method thereof |
| JP2548314B2 (en) * | 1988-07-22 | 1996-10-30 | 松下電器産業株式会社 | Manufacturing method of thermal head |
| JPH02147254A (en) * | 1988-11-29 | 1990-06-06 | Matsushita Electric Ind Co Ltd | Production of thermal head |
| JP2626036B2 (en) * | 1989-03-16 | 1997-07-02 | 松下電器産業株式会社 | Manufacturing method of thermal head |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3271193A (en) * | 1962-09-20 | 1966-09-06 | Cts Corp | Electrical resistance element and method of making the same |
| GB1166992A (en) * | 1965-08-27 | 1969-10-15 | Plessey Co Ltd | Improvements in or relating to Electrical Conductors |
| US3676087A (en) * | 1971-03-15 | 1972-07-11 | Bell Telephone Labor Inc | Technique for the fabrication of a photolithographically definable,glass covered gold conductor pattern |
| JPS5316640A (en) * | 1976-07-29 | 1978-02-15 | Nec Corp | Manufacture of thermal head |
| JPS583201A (en) * | 1981-06-30 | 1983-01-10 | アルプス電気株式会社 | Resistance paste, thick film integrated circuit produced with same paste, thermal head and method of producing same |
-
1983
- 1983-09-17 JP JP58170587A patent/JPS6063174A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3271193A (en) * | 1962-09-20 | 1966-09-06 | Cts Corp | Electrical resistance element and method of making the same |
| GB1166992A (en) * | 1965-08-27 | 1969-10-15 | Plessey Co Ltd | Improvements in or relating to Electrical Conductors |
| US3676087A (en) * | 1971-03-15 | 1972-07-11 | Bell Telephone Labor Inc | Technique for the fabrication of a photolithographically definable,glass covered gold conductor pattern |
| JPS5316640A (en) * | 1976-07-29 | 1978-02-15 | Nec Corp | Manufacture of thermal head |
| JPS583201A (en) * | 1981-06-30 | 1983-01-10 | アルプス電気株式会社 | Resistance paste, thick film integrated circuit produced with same paste, thermal head and method of producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6063174A (en) | 1985-04-11 |
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