JPH0142127B2 - - Google Patents
Info
- Publication number
- JPH0142127B2 JPH0142127B2 JP55124823A JP12482380A JPH0142127B2 JP H0142127 B2 JPH0142127 B2 JP H0142127B2 JP 55124823 A JP55124823 A JP 55124823A JP 12482380 A JP12482380 A JP 12482380A JP H0142127 B2 JPH0142127 B2 JP H0142127B2
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal semiconductor
- scanning
- semiconductor layer
- energy beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
- H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
- H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55124823A JPS5749225A (en) | 1980-09-09 | 1980-09-09 | Single-crystallizing method for non-single crystalline semiconductor layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55124823A JPS5749225A (en) | 1980-09-09 | 1980-09-09 | Single-crystallizing method for non-single crystalline semiconductor layer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5749225A JPS5749225A (en) | 1982-03-23 |
| JPH0142127B2 true JPH0142127B2 (enExample) | 1989-09-11 |
Family
ID=14894982
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55124823A Granted JPS5749225A (en) | 1980-09-09 | 1980-09-09 | Single-crystallizing method for non-single crystalline semiconductor layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5749225A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59194423A (ja) * | 1983-04-20 | 1984-11-05 | Agency Of Ind Science & Technol | 半導体結晶層の製造方法 |
| JP7699561B2 (ja) * | 2022-03-22 | 2025-06-27 | 三菱電機株式会社 | 半導体装置の製造方法および半導体製造装置 |
-
1980
- 1980-09-09 JP JP55124823A patent/JPS5749225A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5749225A (en) | 1982-03-23 |
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