JPH0141224Y2 - - Google Patents

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Publication number
JPH0141224Y2
JPH0141224Y2 JP1980012722U JP1272280U JPH0141224Y2 JP H0141224 Y2 JPH0141224 Y2 JP H0141224Y2 JP 1980012722 U JP1980012722 U JP 1980012722U JP 1272280 U JP1272280 U JP 1272280U JP H0141224 Y2 JPH0141224 Y2 JP H0141224Y2
Authority
JP
Japan
Prior art keywords
cap
conductive layer
output
surface wave
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1980012722U
Other languages
Japanese (ja)
Other versions
JPS56116723U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1980012722U priority Critical patent/JPH0141224Y2/ja
Publication of JPS56116723U publication Critical patent/JPS56116723U/ja
Application granted granted Critical
Publication of JPH0141224Y2 publication Critical patent/JPH0141224Y2/ja
Expired legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

Landscapes

  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Description

【考案の詳細な説明】 本考案は表面波装置に係り、セラミツク基板に
印刷形成した電極上に表面波素子を取付け、更に
該素子を金属キヤツプで覆うことにより製作が容
易で且つ性能を向上しうる装置を提供することを
目的とする。
[Detailed description of the invention] The present invention relates to a surface wave device, which is easy to manufacture and has improved performance by mounting a surface wave element on an electrode printed on a ceramic substrate and covering the element with a metal cap. The purpose is to provide a device that can

一般に、テレビジヨンの送信信号のチヤンネル
分離等に使用されるフイルタとしては例えばL、
C素子を組合わせたものがあるが、これによれば
Q値が低いためシヤープな特性を出しえないとい
う問題点があり、又所望の特性を出しえてもネツ
トワーク数が多くなり大型化してコストが高くな
つてしまうという問題点があつた。
In general, filters used for channel separation of television transmission signals include, for example, L,
There is a combination of C elements, but this has the problem that it cannot produce sharp characteristics due to the low Q value, and even if it can produce the desired characteristics, it requires a large number of networks and becomes large. The problem was that the cost would be high.

従来の表面波フイルタ装置としては、上記問題
点を解決するべく、圧電材料上にクシ型電極を形
成して得た表面波素子を、例えば4本の端子(2
本が入力用、他の2本は出力用)を垂直に植設さ
れた金属製基板(但し端子及び基板間は絶縁され
ている)上面に対し固着し、更に金属キヤツプに
より覆つた所謂CAN方式のものがあるが、これ
によれば表面波素子が完全に金属により取囲まれ
てシールドが完全であるという良い効果を有する
反面、端子間距離が小となるため、表面波素子を
通る伝達波以外に入力及び出力端子間で直接信号
が伝わる直達波が発生し、この二つの波の和又は
差の信号によりリツプル現象を生じるという欠点
があつた。
In order to solve the above problems, conventional surface wave filter devices use a surface wave element obtained by forming comb-shaped electrodes on a piezoelectric material, for example, with four terminals (2
This is the so-called CAN method, in which a terminal (one for input, the other two for output) is fixed to the top surface of a vertically planted metal board (however, the terminals and the board are insulated), and then covered with a metal cap. Although this method has the good effect of completely surrounding the surface wave element with metal and providing complete shielding, the distance between the terminals is small, so the transmitted wave passing through the surface wave element is Another drawback is that a direct wave is generated in which a signal is directly transmitted between the input and output terminals, and a ripple phenomenon occurs due to the signal that is the sum or difference of these two waves.

本出願人は先に、上記欠点を解消するべく、実
願昭54−10373号「表面波装置」により1枚のセ
ラミツク基板上に信号入出力用及びアース用電極
を夫々印刷形成し、その上面に絶縁層をリング状
に付着形成した後、該アース用電極の露出部に表
面波素子を固着し、更に該表面波素子を覆つて接
着剤付き金属製キヤツプを該リング状絶縁層に接
着させた後樹脂によりモールドしたものを提案し
た。
In order to eliminate the above-mentioned drawbacks, the present applicant previously printed and formed electrodes for signal input/output and grounding on a single ceramic substrate using Utility Application No. 10373/1983 entitled "Surface Wave Device", and After forming an insulating layer in a ring shape, a surface wave element is fixed to the exposed part of the grounding electrode, and a metal cap with adhesive is bonded to the ring-shaped insulating layer to cover the surface wave element. We proposed a method in which the material was molded with resin.

上記先願例によれば、予め入力用電極と出力用
電極を離間させて配設しておくことにより、上記
直達波を防止してリツプル現象を抑えることがで
き、又上記CAN方式と同様に、表面波素子はキ
ヤツプにより略完全に外気と遮断されるため、表
面波素子と端子又は電極とを結線する細径のアル
ミニウム等のワイヤが外気中の水分と反応して腐
食しワイヤボンデイング部分が外れたり接触抵抗
が大となつて特性劣化を生ずる等の不都合を防止
することができる。
According to the above-mentioned example of the prior application, by arranging the input electrode and the output electrode apart from each other in advance, it is possible to prevent the above-mentioned direct wave and suppress the ripple phenomenon. Since the surface wave element is almost completely isolated from the outside air by the cap, the thin aluminum wires that connect the surface wave element and the terminals or electrodes may react with moisture in the outside air and corrode, causing the wire bonding part to corrode. It is possible to prevent inconveniences such as detachment or increased contact resistance resulting in characteristic deterioration.

しかるに上記先願例によれば、絶縁層及び金属
キヤツプ間に接着剤の層が介在し、モールド層、
接着層を順次介して若干の水分がキヤツプ内に浸
透し、未だ上記特性劣化の防止が不完全であり、
又キヤツプの接着のために、例えば200℃の雰囲
気中で1時間程度キヤツプを基板に押圧させる作
業が必要で作業工数が大になると共に、押圧圧力
により絶縁層が破壊されキヤツプ及び電極が導通
してしまうというおそれがあり、又キヤツプの周
縁に該基板に対向接着される鍔部を設ける必要が
あるため、該鍔部の分基板面積が大となり装置が
大型化する等の問題点があつた。
However, according to the above-mentioned prior application, an adhesive layer is interposed between the insulating layer and the metal cap, and the mold layer,
A small amount of moisture penetrates into the cap through the adhesive layer, and the above deterioration of characteristics is still incompletely prevented.
Furthermore, in order to bond the cap, it is necessary to press the cap against the board in an atmosphere of, for example, 200°C for about an hour, which increases the number of man-hours and also causes the insulating layer to be destroyed by the pressing pressure, resulting in conductivity between the cap and the electrode. In addition, since it is necessary to provide a flange on the periphery of the cap that is bonded facing the substrate, the flange increases the area of the substrate, leading to problems such as an increase in the size of the device. .

また、表面波素子は金属製のキヤツプにより覆
われるためシールド性は向上するものの、キヤツ
プはアース電位とはされておらず確実なシールド
を行なうには到らず、外乱が侵入する虞れがある
という問題点があつた。更に、表面波装置は形状
の小なる装置であるため、基板上の所定位置にキ
ヤツプを適宜位置決めして取付ける作業が困難で
あるという問題点があつた。
Additionally, since the surface wave element is covered with a metal cap, the shielding performance is improved, but the cap is not at ground potential, so it is not possible to provide reliable shielding, and there is a risk that external disturbances may infiltrate. There was a problem. Furthermore, since the surface wave device is a small device, there is a problem in that it is difficult to properly position and attach the cap to a predetermined position on the board.

本考案は上記先願例の問題点を解決したもので
あり、以下図面と共にその実施例につき説明す
る。
The present invention solves the problems of the above-mentioned prior application, and embodiments thereof will be described below with reference to the drawings.

第1図は本考案になる表面波装置の1実施例を
構成する基板及び金属キヤツプの斜視図であり、
以下その製造工程順に説明する。
FIG. 1 is a perspective view of a substrate and a metal cap constituting one embodiment of the surface acoustic wave device according to the present invention.
The manufacturing steps will be explained below in order.

図中、表面波装置1はテレビジヨンの中間周波
数のバンドパスフイルタ、或いはビデオ信号等の
高周波信号に変換するRFモジユレータ等のバン
ドパスフイルタとして使用されるものであり、基
板2を有する。
In the figure, a surface acoustic wave device 1 is used as a bandpass filter for an intermediate frequency of a television, or a bandpass filter for an RF modulator for converting a high frequency signal such as a video signal, and has a substrate 2.

基板2は生シート状の状態で、第1図、第3図
に示す如く、両側近傍部に1対の凹部2aを加工
された後焼成硬化される。続いて第1図中右上り
斜線で示す如く、基板2上面に銀ペーストにより
1対の入力用電極3,4と1対の出力用電極5,
6と−のアース用電極7とを印刷形成した後仮乾
燥される。
As shown in FIGS. 1 and 3, the substrate 2 is in the form of a green sheet, after which a pair of recesses 2a are formed in the vicinity of both sides, and then fired and hardened. Subsequently, as shown by diagonal lines on the upper right in FIG. 1, a pair of input electrodes 3 and 4 and a pair of output electrodes 5,
After printing and forming the negative earthing electrodes 7 and 6, they are temporarily dried.

次いで、第1図中梨地模様で示す如く、基板2
の電極3〜7の一部を含んだ上面に例えば所定厚
さの硼珪酸ガラス製の絶縁層8を印刷形成される
が、このとき絶縁層8はアース用電極7の上端7
a及び下端7bの部分には付着されず、該上端7
a、下端7bは露出したままである。またこの
時、第1図及び第2図に示されるように、各入出
力用電極3〜6の内、後にワイヤーボンデイング
が実施されたり、端子ピンが配設される所定部分
も絶縁層8は付着されず露出されたままである。
続いて基板2は仮乾燥された後800〜900℃の温度
で焼成され上記電極3〜7、絶縁層8が安定化さ
れる。
Next, as shown by the satin pattern in FIG.
For example, an insulating layer 8 made of borosilicate glass with a predetermined thickness is printed and formed on the upper surface including a part of the electrodes 3 to 7 .
a and the lower end 7b, but the upper end 7
a, the lower end 7b remains exposed. At this time, as shown in FIGS. 1 and 2, the insulating layer 8 is also applied to predetermined portions of the input/output electrodes 3 to 6 where wire bonding will be performed later or terminal pins will be provided. It is not attached and remains exposed.
Subsequently, the substrate 2 is temporarily dried and then fired at a temperature of 800 to 900°C to stabilize the electrodes 3 to 7 and the insulating layer 8.

次いで、絶縁層8上面の上記アース用電極上端
7a、下端7bを含んだ上面に銀ペーストにより
第1図中左上りの斜線で示す如くリング状の導電
層9が印刷形成され、仮乾燥の後上記800〜900℃
の温度で焼成される。このとき導電層9は上記ア
ース用電極7の上端7a、下端7bにおいて該ア
ース用電極7と導通してアース電位となる。
Next, a ring-shaped conductive layer 9 is formed by printing on the upper surface of the insulating layer 8 including the upper end 7a and lower end 7b of the earthing electrode using silver paste as shown by diagonal lines in the upper left corner of FIG. 1, and after temporary drying. Above 800~900℃
It is fired at a temperature of At this time, the conductive layer 9 is electrically connected to the grounding electrode 7 at the upper end 7a and lower end 7b of the grounding electrode 7, and has a ground potential.

次いで板状圧電材料10表面にくし歯状の入力
及び出力電極11a,11bを形成してなる表面
波素子12がアース用電極7の中央露出部上面
に、所定の導電接合材料により接合された後150
℃〜180℃の温度で乾燥し固着される。その後素
子12の入力電極11aの1対のくし歯部を夫々
径寸法30μ〜40μ程度のワイヤ13により基板1
の入力用電極3,4に対し超音波ボンダーにより
ボンデイングされる。同様に出力電極11bも基
板1の出力用電極5,6に対しワイヤボンデイン
グされる。
Next, a surface wave element 12 formed by forming comb-shaped input and output electrodes 11a and 11b on the surface of the plate-shaped piezoelectric material 10 is bonded to the upper surface of the central exposed portion of the grounding electrode 7 using a predetermined conductive bonding material. 150
It is dried and fixed at temperatures between ℃ and 180℃. After that, a pair of comb tooth portions of the input electrode 11a of the element 12 are connected to the substrate 1 by wires 13 each having a diameter of about 30μ to 40μ.
The input electrodes 3 and 4 are bonded using an ultrasonic bonder. Similarly, the output electrode 11b is also wire bonded to the output electrodes 5 and 6 of the substrate 1.

一方、第1図に示す如く、しんちゆう板等の材
料により、両側下端に1対の凸部14aを有する
金属キヤツプ14が、上記基板2に対し表面波素
子12を覆い且つ1対の凸部14aが夫々1対の
凹部2aに係合される状態で容易に位置決め取付
けられる。このときキヤツプ14のリング状下端
は上記リング状導電層9に大略一致する。
On the other hand, as shown in FIG. 1, a metal cap 14 made of a material such as a steel plate and having a pair of protrusions 14a at the lower ends of both sides covers the surface wave element 12 with respect to the substrate 2 and has a pair of protrusions. The parts 14a can be easily positioned and attached in a state where they are respectively engaged with the pair of recesses 2a. At this time, the ring-shaped lower end of the cap 14 approximately coincides with the ring-shaped conductive layer 9.

続いて、第2図に示す如く、キヤツプ14の外
周下端を全周にわたり半田15により半田付け
し、キヤツプ14及び導電層9を導通固着する。
又第1図中基板2の各電極3〜7に端子ピン21
a〜21eを半田付固着する。更に第2図に示す
如く、基板2表面及びキヤツプ14に樹脂をモー
ルドし、モールド層22を形成してパツケージを
施す。
Subsequently, as shown in FIG. 2, the lower end of the outer periphery of the cap 14 is soldered with solder 15 over the entire circumference, so that the cap 14 and the conductive layer 9 are electrically connected and fixed.
In addition, terminal pins 21 are attached to each electrode 3 to 7 of the substrate 2 in FIG.
Solder and secure parts a to 21e. Further, as shown in FIG. 2, resin is molded on the surface of the substrate 2 and the cap 14, a mold layer 22 is formed, and a package is applied.

かくして、上記表面波装置1が完成するが、こ
れによれば金属キヤツプ14及び絶縁層8間には
金属製の導電層9が介在し、しかも導電層9及び
キヤツプ14の継ぎ目は半田15により覆われて
いるため、外気中の水分はモールド層22を浸透
しうるもののキヤツプ14内には極めて進入し難
く特性劣化を略完全に防止しえ、又キヤツプ14
を半田15により固着するようにしているため取
付けに要する時間が短く作業工数を低減しえ、又
キヤツプ14の押圧作業は不要で絶縁層8の破壊
によるキヤツプ14及び入出力用電極3〜6の短
絡等の不都合がなくなり、又キヤツプ14は上記
半田付けによりキヤツプ周縁に鍔部を設けること
は不要となり基板2面積を小として装置1を小型
化しえ、又キヤツプ14は上記の如く導電層9、
アース用電極7の上端7a,7bを介して該アー
ス用電極7に導通されて確実にアース電位となつ
ているため、シールド性能が大で装置1の性能を
向上しえ、又上記先願例と同様に、第1図中ホツ
ト側入力用電極及び端子3,21aとホツト側出
力用電極及び端子6,21eとが互いに基板2の
両側近傍に大なる距離離間して配設されているた
め直達波が減少しリツプル現象を抑えることがで
きる。
In this way, the surface acoustic wave device 1 is completed. According to this, a metal conductive layer 9 is interposed between the metal cap 14 and the insulating layer 8, and the joint between the conductive layer 9 and the cap 14 is covered with the solder 15. Therefore, although moisture in the outside air can penetrate the mold layer 22, it is extremely difficult to penetrate into the cap 14, and deterioration of characteristics can be almost completely prevented.
Since it is fixed by solder 15, the time required for installation is shortened, and the number of man-hours can be reduced. Also, there is no need to press the cap 14, and there is no need to press the cap 14 and the input/output electrodes 3 to 6 due to breakdown of the insulating layer 8. Inconveniences such as short circuits are eliminated, and the soldering of the cap 14 eliminates the need to provide a flange around the periphery of the cap, making it possible to reduce the area of the board 2 and downsizing the device 1.
Since the earthing electrode 7 is electrically connected to the earthing electrode 7 through the upper ends 7a and 7b, and the earth potential is reliably set, the shielding performance is high and the performance of the device 1 can be improved. Similarly, in FIG. 1, the hot side input electrodes and terminals 3, 21a and the hot side output electrodes and terminals 6, 21e are arranged close to both sides of the substrate 2 with a large distance apart from each other. Direct waves are reduced and ripple phenomena can be suppressed.

次に上記表面波装置1を効率的に製造する手順
につき説明する。まず第4図に示す如く、大寸法
のセラミツク基板23に夫々複数のx方向スナツ
プライン24a、y方向スナツプライン24bを
刻入して複数の上記単体基板2相当部を形成す
る。次いで、複数の基板2相当部に同時に上記電
極3〜7、絶縁層8、導電層9を順次形成した
後、順次表面波素子12、キヤツプ14を接合し
た後、スナツプライン24a,24bに沿つて分
離し複数の上記表面波装置1を形成する。これに
よれば大量生産的に製造でき製造コストを低減し
うる。
Next, a procedure for efficiently manufacturing the surface acoustic wave device 1 will be explained. First, as shown in FIG. 4, a plurality of x-direction snap lines 24a and a plurality of y-direction snap lines 24b are carved into a large-sized ceramic substrate 23 to form a plurality of portions corresponding to the single substrate 2. Next, the electrodes 3 to 7, the insulating layer 8, and the conductive layer 9 are simultaneously formed on the portions corresponding to the plurality of substrates 2, and then the surface wave element 12 and the cap 14 are sequentially bonded, and then separated along the snap lines 24a and 24b. Then, a plurality of surface wave devices 1 are formed. According to this, mass production can be performed and manufacturing costs can be reduced.

尚上記金属キヤツプ14は予め例えばすずメツ
キを施しておき、半田15の半田付けをより確実
にするようにしてもよい。
Incidentally, the metal cap 14 may be tin-plated in advance, for example, so that the solder 15 can be soldered more securely.

又半田15の形成はキヤツプ14外周に逐次半
田付けする方法に限らず、予めキヤツプ14外形
と一致する半田製リングを該キヤツプ14外周に
嵌合配設した後加熱溶融させて形成するようにし
てもよい。
Furthermore, the solder 15 is not limited to the method of sequentially soldering to the outer periphery of the cap 14, but may also be formed by fitting a solder ring that matches the outer shape of the cap 14 to the outer periphery of the cap 14 in advance and then heating and melting it. Good too.

上述の如く、本考案になる表面波装置によれ
ば、該キヤツプ及び絶縁層間には金属製の該導電
層が介在し、しかも導電層及びキヤツプの継ぎ目
は半田により覆われるため外気中の水分はキヤツ
プ内に極めて進入し難く特性劣化を防止しえ、又
キヤツプ取付けを半田により行なつているため、
作業工数を低減しうると共に、絶縁層の破壊のお
それなくキヤツプ及び入出力用電極の短絡のおそ
れなく製品歩留まりを向上しえ、又キヤツプの隅
肉的半田付けによりキヤツプに鍔部を設けること
は不要で装置を小型化しえ、又キヤツプは導電層
を介してアース用電極と導通し確実にアース電位
となつているため、シールド性能が大で性能を向
上し得、更に絶縁基板に位置決め凹部が形成され
ると共に金属製キヤツプには位置決め凸部が形成
されており、従つて金属製キヤツプの位置決めは
位置決め凸部を位置決め凹部に係合させるだけで
容易に行なうことができ取付作業性を向上しうる
等の特長を有するものである。
As mentioned above, according to the surface acoustic wave device of the present invention, the metal conductive layer is interposed between the cap and the insulating layer, and the joint between the conductive layer and the cap is covered with solder, so that moisture in the outside air is prevented. It is extremely difficult to enter the cap, preventing property deterioration, and since the cap is attached by soldering,
Not only can the number of work steps be reduced, but also the product yield can be improved without the risk of breaking the insulating layer and short-circuiting the cap and input/output electrodes.Also, it is possible to provide a flange on the cap by soldering the cap in its fillets. Since the cap is electrically connected to the grounding electrode through the conductive layer and is securely at ground potential, the shielding performance is large and the performance can be improved. At the same time, a positioning protrusion is formed on the metal cap, and therefore, the metal cap can be easily positioned by simply engaging the positioning protrusion with the positioning recess, improving the installation work efficiency. It has the characteristics of being transparent.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本考案になる表面波装置の1実施例を
構成する基板及び金属キヤツプの斜視図、第2図
及び第3図は夫々上記装置の縦断正面部分図及び
縦断側面部分図、第4図は上記装置を複数個一体
に製造する工程を示す図である。 1……表面波装置、2,23……基板、3,4
……入力電極、5,6……出力電極、7……アー
ス用電極、7a,7b……アース用電極上下端、
8……絶縁層、9……導電層、12……表面波素
子、13……ワイヤ、14……金属キヤツプ、1
5……半田、21a〜21e……端子ピン、22
……モールド層、24a,24b……スナツプラ
イン。
FIG. 1 is a perspective view of a substrate and a metal cap constituting one embodiment of the surface acoustic wave device according to the present invention, FIGS. The figure is a diagram showing a process of manufacturing a plurality of the above devices in one piece. 1...Surface wave device, 2, 23...Substrate, 3, 4
...Input electrode, 5, 6...Output electrode, 7...Grounding electrode, 7a, 7b...Top and bottom ends of grounding electrode,
8... Insulating layer, 9... Conductive layer, 12... Surface wave element, 13... Wire, 14... Metal cap, 1
5...Solder, 21a-21e...Terminal pin, 22
...Mold layer, 24a, 24b...Snap line.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 位置決め凹部が形成されてなる絶縁基板と、
夫々導電材料により該基板上面に付着形成された
信号入出力用及びアース用の複数の電極と、該信
号入出力用電極の端子との接続部及び表面波素子
との接続部を露出させ、かつ該アース用電極の上
端若しくは下端のいずれか一端、又は該上端と下
端の双方を露出させると共に端子と接続される部
分を露出させて該信号入出力用及び該アース用電
極上面に付着形成された絶縁層と、該絶縁層の上
面に該信号入出力用の複数の電極と電気的に絶縁
された状態で、かつ該アース用電極の露出部分と
導通するように形成されたリング状の導電層と、
該アース用電極の露出部上面に固着され、該信号
入出力用電極の露出部に対し夫々導通を取られた
表面波素子と、上記位置決め凹部と係合する位置
決め凸部が形成されると共に、該表面波素子を覆
つて該導電層上面に配設され、かつ外周全体にわ
たり該導電層との継ぎ目を覆うよう半田付けがさ
れることにより、該導電層上面に導通固着される
金属製キヤツプとより構成してなる表面波装置。
an insulating substrate having a positioning recess formed therein;
A plurality of electrodes for signal input/output and grounding, each of which is formed by adhering to the upper surface of the substrate using a conductive material, and a connection portion between the terminal of the signal input/output electrode and a connection portion with the surface wave element are exposed, and Adhesively formed on the upper surface of the signal input/output and earthing electrodes by exposing either the upper end or the lower end, or both the upper and lower ends, and exposing the portion connected to the terminal. an insulating layer, and a ring-shaped conductive layer formed on the upper surface of the insulating layer so as to be electrically insulated from the plurality of signal input/output electrodes and to be electrically connected to the exposed portion of the grounding electrode. and,
surface wave elements fixed to the upper surface of the exposed portion of the grounding electrode and electrically connected to the exposed portions of the signal input/output electrode, and a positioning protrusion that engages with the positioning recess; A metal cap is disposed on the top surface of the conductive layer to cover the surface wave element, and is conductively fixed to the top surface of the conductive layer by being soldered to cover the entire outer periphery of the joint with the conductive layer. A surface wave device consisting of
JP1980012722U 1980-02-04 1980-02-04 Expired JPH0141224Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1980012722U JPH0141224Y2 (en) 1980-02-04 1980-02-04

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1980012722U JPH0141224Y2 (en) 1980-02-04 1980-02-04

Publications (2)

Publication Number Publication Date
JPS56116723U JPS56116723U (en) 1981-09-07
JPH0141224Y2 true JPH0141224Y2 (en) 1989-12-06

Family

ID=29609285

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1980012722U Expired JPH0141224Y2 (en) 1980-02-04 1980-02-04

Country Status (1)

Country Link
JP (1) JPH0141224Y2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60124110A (en) * 1983-12-08 1985-07-03 Alps Electric Co Ltd Elastic surface wave element
JP4618492B2 (en) * 2004-12-24 2011-01-26 セイコーエプソン株式会社 Surface acoustic wave sensor
JP2011009808A (en) * 2009-06-23 2011-01-13 Nippon Dempa Kogyo Co Ltd Crystal vibrator
JP2013145964A (en) * 2012-01-13 2013-07-25 Nippon Dempa Kogyo Co Ltd Piezoelectric device and manufacturing method of piezoelectric device
JP6290611B2 (en) * 2013-11-27 2018-03-07 京セラ株式会社 Piezoelectric device
JP6347605B2 (en) * 2013-12-27 2018-06-27 京セラ株式会社 Piezoelectric oscillator

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS553854Y2 (en) * 1977-09-03 1980-01-29
JPS54118044U (en) * 1978-02-07 1979-08-18

Also Published As

Publication number Publication date
JPS56116723U (en) 1981-09-07

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