JPH0215393Y2 - - Google Patents
Info
- Publication number
- JPH0215393Y2 JPH0215393Y2 JP1982161118U JP16111882U JPH0215393Y2 JP H0215393 Y2 JPH0215393 Y2 JP H0215393Y2 JP 1982161118 U JP1982161118 U JP 1982161118U JP 16111882 U JP16111882 U JP 16111882U JP H0215393 Y2 JPH0215393 Y2 JP H0215393Y2
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- stem
- approximately
- adhesive member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010897 surface acoustic wave method Methods 0.000 claims description 46
- 239000000853 adhesive Substances 0.000 claims description 31
- 230000001070 adhesive effect Effects 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 8
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 229910013641 LiNbO 3 Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
【考案の詳細な説明】
〔考案の技術分野〕
本考案は弾性表面波デバイスに係り、特にステ
ムの形状に関するものである。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a surface acoustic wave device, and particularly relates to the shape of a stem.
第１図ａ，ｂを参照して、弾性表面波デバイス
を説明する。第１図ａにおいて、LiTaO3，
LiNbO3、セラミツク等からなる圧電性基板２の
一主面上に互いに噛み合つたくし形の入力電極３
と、この入力電極３に連結されたシールド電極４
と、このシールド電極４を介して入力電極３に対
接され、同じく互いに噛み合つたくし形の出力電
極５とが配置され、弾性表面波素子１が構成され
ている。また、入力電極３は、ボンデイング線９
により絶縁ピン６と突起７に電気的に接続されて
いる。一方、出力電極５も、ボンデイング線９に
より絶縁ピン６に電気的に接続されている。
A surface acoustic wave device will be explained with reference to FIGS. 1a and 1b. In Figure 1a, LiTaO 3 ,
Interdigitated input electrodes 3 are interlocked with each other on one main surface of a piezoelectric substrate 2 made of LiNbO 3 , ceramics, etc.
and a shield electrode 4 connected to this input electrode 3.
A surface acoustic wave element 1 is constructed by disposing interdigitated output electrodes 5 which are in contact with the input electrode 3 via the shield electrode 4 and also interlock with each other. In addition, the input electrode 3 is connected to a bonding wire 9
The insulating pin 6 and the protrusion 7 are electrically connected to each other. On the other hand, the output electrode 5 is also electrically connected to the insulating pin 6 by a bonding wire 9.
第１図ｂにおいて、弾性表面波素子１は基台例
えばステム１２上に硬化後の厚さ略20μｍ乃至略
30μｍの接着部材１１を介して載置されている。
また、絶縁ピン６はステム１２に絶縁性接着剤１
４を介して貫通植設されている。また突起７に対
応するステム１２の裏面１５に凹部１６が設けら
れ、この凹部にはアースピン１３が導電性接着剤
例えば銀ロウ１７を介してステム１２に植設され
ている。また、ステム１２は通常、矢印１９の方
向から打ち抜きプレス製形しているので、弾性表
面波素子１が配置されている側のステム１２の面
の周縁部は丸味１８を帯びている。この後、第２
図に示す通り、ステム１２上へシエル２０をかぶ
せて気密封じをし、弾性表面波デバイス２１が完
成される。この時、ステム１２上の丸味１８があ
るので、設計時よりもシエル２０とステム１２と
の接合面積が略20％乃至略25％減少しシエル２０
とステム１２とが完全に接合しない欠点があつ
た。また、従来の弾性表面波デバイス２１の重大
な欠点として第１図ｂにおいて、ステム１２は方
向１９から打ち抜きプレス製形されているので、
ステム１２の弾性表面波素子１が配置されている
ステム面２２に高低の差が略15μｍ乃至略40μｍ
の凹凸（以下うねりと称す）が発生する。このう
ねりにより、接着部材１１の厚さが一定でなくな
り、即ち接着部材１２の厚さが略15μｍ乃至略
40μｍとなり場所によつては接着部材１１の厚さ
が10μｍ以下の部分が顕著に発生する。この場
合、圧電性基板２内を伝播するスプリアス成分の
バルク波は、接着部材１１により吸収されにくく
なる問題を有する。さらに、接着部材１１の厚さ
が一定でなくなるので弾性表面波素子１と接着部
材１１との接着強度の分布は略0.7kg乃至略2.5Kg
であり接着強度1kg以下となる部位が存在する
と、振動などの要因によりステム１２から弾性表
面波素子１が乖離する現象が顕著に見られた。 In FIG. 1b, the surface acoustic wave element 1 is mounted on a base, for example, a stem 12, with a thickness of approximately 20 μm to approximately 20 μm after curing.
It is mounted via an adhesive member 11 of 30 μm.
Furthermore, the insulating pin 6 is attached to the stem 12 with an insulating adhesive 1.
It is implanted through 4. Further, a recess 16 is provided on the back surface 15 of the stem 12 corresponding to the protrusion 7, and a ground pin 13 is implanted into the stem 12 in this recess via a conductive adhesive such as silver solder 17. Further, since the stem 12 is usually punched and pressed in the direction of the arrow 19, the peripheral edge of the surface of the stem 12 on the side where the surface acoustic wave element 1 is arranged has a roundness 18. After this, the second
As shown in the figure, the surface acoustic wave device 21 is completed by covering the stem 12 with the shell 20 and airtightly sealing it. At this time, since there is a roundness 18 on the stem 12, the joint area between the shell 20 and the stem 12 is reduced by about 20% to about 25% compared to the design time.
There was a drawback that the and stem 12 were not completely joined. In addition, a serious drawback of the conventional surface acoustic wave device 21 is that in FIG. 1b, the stem 12 is punched and press-shaped from the direction 19.
The height difference of the stem surface 22 on which the surface acoustic wave element 1 of the stem 12 is arranged is approximately 15 μm to approximately 40 μm.
This causes unevenness (hereinafter referred to as waviness). Due to this undulation, the thickness of the adhesive member 11 is no longer constant, that is, the thickness of the adhesive member 12 is about 15 μm or more.
The thickness of the adhesive member 11 is 40 μm, and depending on the location, the thickness of the adhesive member 11 is noticeably less than 10 μm. In this case, there is a problem that the bulk wave of the spurious component propagating within the piezoelectric substrate 2 becomes difficult to be absorbed by the adhesive member 11. Furthermore, since the thickness of the adhesive member 11 is not constant, the adhesive strength distribution between the surface acoustic wave element 1 and the adhesive member 11 is approximately 0.7 kg to approximately 2.5 kg.
If there is a portion where the adhesive strength is 1 kg or less, a phenomenon in which the surface acoustic wave element 1 separates from the stem 12 due to factors such as vibration is noticeable.
本考案の弾性表面波デバイスは、上述の問題点
に鑑みて、弾性表面波素子とステムとを接着する
接着部材の厚さを一定にすることにある。
In view of the above-mentioned problems, the surface acoustic wave device of the present invention has the objective of making the thickness of the adhesive member for bonding the surface acoustic wave element and the stem constant.
本考案の弾性表面波デバイスは、弾性表面波素
子が載置固定されるステム面の凹凸を略10μｍ以
下にすることにより、弾性表面波素子とステムと
を接着する接着部材の厚さを一定にするものであ
る。
The surface acoustic wave device of the present invention maintains a constant thickness of the adhesive member that bonds the surface acoustic wave element and the stem by reducing the unevenness of the stem surface on which the surface acoustic wave element is placed and fixed to approximately 10 μm or less. It is something to do.
本考案の弾性表面波デバイスの基本的構造は第
１図ａ，ｂと同様なので詳細な説明は省略する。
The basic structure of the surface acoustic wave device of the present invention is the same as that shown in FIGS. 1a and 1b, so a detailed explanation will be omitted.
本考案の弾性表面波デバイス３１は、弾性表面
波素子１を接着部材１１を介してステム１２に載
置固定されたステム面３３のうねりが略10μｍ以
下の平坦を有する。また、このステム面３３に対
向するステム裏面３４の周縁部３５はステム裏面
３５から打ち抜きプレスをしたために丸味３５を
帯びている。 In the surface acoustic wave device 31 of the present invention, the stem surface 33 on which the surface acoustic wave element 1 is placed and fixed on the stem 12 via the adhesive member 11 has a flat surface with a waviness of approximately 10 μm or less. Further, the peripheral edge portion 35 of the stem back surface 34 facing this stem surface 33 has a roundness 35 due to punching and pressing from the stem back surface 35.
上述の構造の弾性表面波デバイス３１はステム
面３３のうねりが略10μｍ以下とされているの
で、接着部材１２の硬化後の厚さは略20μｍ乃至
略30μｍが容易に得られる。また、うねりが略
10μｍの部分がステム面３３に発生しても接着部
材１２の厚さは略10μｍ乃至略30μｍにすぎない。
従つて、本考案の弾性表面波デバイス３１では、
圧電性基板２内を伝播するスプリアス成分のバル
ク波は、接着部材１１により均一に吸収される。
その上、振動などの要因によりステム面３３から
弾性表面波素子１が乖離する現象はほとんど見ら
れなくなつた。この理由は、接着部材１１の厚さ
が一定となり、弾性表面波素子１と接着部材１１
との接着強度の分布は略1.2Kg乃至略2.4Kgとな
り接着強度1Kg以下の部位が全く存在しないため
である。さらに、接着部材１１の厚さが一定とな
つたので、デバイス入力電極容量の分布におい
て、従来の弾性表面波デバイスと異なり、本考案
の弾性表面波デバイスの規格容量分布即ち規格容
量はその±10％に容易に管理することができる。
その上、ステム面３３の円周部即ちシエルシーリ
ング部３６が丸味を帯びないので、シエルを接合
するシエルシーリングの面積が従来の弾性表面波
デバイスに比べて略20％以上広くなり、シエル２
０とステム１２との溶接強度が向上した。従来の
弾性表面波デバイスでは１万個あたりのリーク不
良が略0.02％乃至略0.05％発生するに対し、本考
案の弾性表面波デバイスのリーク不良の発生率は
0.00％であつた。 In the surface acoustic wave device 31 having the above-described structure, the waviness of the stem surface 33 is approximately 10 μm or less, so that the thickness of the adhesive member 12 after curing can easily be approximately 20 μm to approximately 30 μm. Also, the undulation is
Even if a 10 μm portion occurs on the stem surface 33, the thickness of the adhesive member 12 is only about 10 μm to about 30 μm.
Therefore, in the surface acoustic wave device 31 of the present invention,
Bulk waves of spurious components propagating within the piezoelectric substrate 2 are uniformly absorbed by the adhesive member 11.
Furthermore, the phenomenon in which the surface acoustic wave element 1 separates from the stem surface 33 due to factors such as vibration is almost no longer observed. The reason for this is that the thickness of the adhesive member 11 is constant, and the surface acoustic wave element 1 and the adhesive member 11
This is because the distribution of adhesive strength between the two is approximately 1.2Kg to approximately 2.4Kg, and there is no area with adhesive strength of 1Kg or less. Furthermore, since the thickness of the adhesive member 11 is constant, the distribution of device input electrode capacitance differs from conventional surface acoustic wave devices in that the standard capacitance distribution of the surface acoustic wave device of the present invention, that is, the standard capacitance, is ±10 % can be easily managed.
Furthermore, since the circumferential portion of the stem surface 33, that is, the shell sealing portion 36, is not rounded, the area of the shell sealing that joins the shells is approximately 20% wider than that of conventional surface acoustic wave devices, and the shell 2
The welding strength between 0 and stem 12 was improved. In conventional surface acoustic wave devices, leak defects occur at approximately 0.02% to approximately 0.05% per 10,000 devices, whereas the incidence of leak defects in the surface acoustic wave device of this invention is approximately 0.02% to approximately 0.05%.
It was 0.00%.
次に第４図ａ，ｂを参照して本考案の弾性表面
波デバイスの製造方法について説明する。 Next, a method for manufacturing the surface acoustic wave device of the present invention will be described with reference to FIGS. 4a and 4b.
第４図ａにおいて、ステム基板を矢印４４の方
向から打ち抜きプレス製形しステム４１を製造す
る。その際、アースピン用の凹部４３と絶縁ピン
用の貫通孔４２とを同時に形成する。また、一枚
のステム基板から多数のステム４１を製造するこ
とも可能である。 In FIG. 4a, a stem 41 is manufactured by punching and pressing a stem substrate in the direction of an arrow 44. At this time, the recess 43 for the earth pin and the through hole 42 for the insulating pin are formed at the same time. Furthermore, it is also possible to manufacture a large number of stems 41 from one stem substrate.
次に第４図ｂにおいて、アースピン５１を銀ロ
ウ５２を介してステム４１に取着する。それと同
時に絶縁ピン５３を絶縁ガラス５４を介してステ
ム４１に取着する。ステム面５５の弾性表面波素
子５６をマウントする部分に粘度120CPS乃至
150CPSの熱硬化型２液性エポキシ接着剤を弾性
表面波素子５６と略同等の面積に略100μｍ乃至
略120μｍ程度の厚みにスピンコートする。その
後、接着剤塗膜上に弾性表面波素子５６を載置さ
せる。次に１時間乃至２時間125℃乃至150℃で加
熱処理し接着剤を熱硬化させ、ステム面５５に弾
性表面波素子５６を接着固定させる。この時、硬
化後の接着剤（以下接着部材と称する）５７は略
20μｍ乃至略30μｍの厚みになる。次に、弾性表
面波素子５６の入力電極のアース電極側をステム
面５５に設けられた突起５９にボンデイングワイ
ヤー５８で電気的に接続する。また、弾性表面波
素子５６の入力電極の反対側電極は、絶縁ピン５
３へボンデイングワイヤー５８で電気的に接続す
る。これと同時に、出力電極の両側の電極は各々
ステム絶縁ピンとボンデイングワイヤーで電気的
に接続する。最後に、ステム面５５の周縁部６１
とシエル６２とを溶接し気密封止する。このよう
にして、本考案の弾性表面波デバイス６３は製造
される。 Next, in FIG. 4b, the ground pin 51 is attached to the stem 41 via the silver solder 52. At the same time, the insulating pin 53 is attached to the stem 41 via the insulating glass 54. The part of the stem surface 55 where the surface acoustic wave element 56 is mounted has a viscosity of 120 CPS or more.
A thermosetting two-component epoxy adhesive of 150 CPS is spin-coated to a thickness of approximately 100 μm to approximately 120 μm over an area approximately equivalent to that of the surface acoustic wave element 56. Thereafter, the surface acoustic wave element 56 is placed on the adhesive coating. Next, heat treatment is performed at 125° C. to 150° C. for 1 to 2 hours to thermally cure the adhesive, and the surface acoustic wave element 56 is adhesively fixed to the stem surface 55. At this time, the adhesive (hereinafter referred to as adhesive member) 57 after curing is approximately
The thickness is 20 μm to approximately 30 μm. Next, the ground electrode side of the input electrode of the surface acoustic wave element 56 is electrically connected to the protrusion 59 provided on the stem surface 55 using a bonding wire 58. Further, the electrode on the opposite side of the input electrode of the surface acoustic wave element 56 is connected to the insulating pin 5.
3 through a bonding wire 58. At the same time, the electrodes on both sides of the output electrode are electrically connected to the stem insulating pin using bonding wires. Finally, the peripheral edge 61 of the stem surface 55
and shell 62 are welded and hermetically sealed. In this way, the surface acoustic wave device 63 of the present invention is manufactured.
本考案の弾性表面波デバイスは、弾性表面波素
子が載置固定されるステム面の凹凸を略10μｍ以
下にすることにより、弾性表面波素子とステムと
を接着する接着部材の厚さを一定にし、圧電性基
板内を伝播するスプリアス成分のバルク波を接着
部材により効果的に均一に吸音することができ
る。
The surface acoustic wave device of the present invention allows the thickness of the adhesive member that bonds the surface acoustic wave element and the stem to be constant by reducing the unevenness of the stem surface on which the surface acoustic wave element is placed and fixed to approximately 10 μm or less. , Bulk waves of spurious components propagating within the piezoelectric substrate can be effectively and uniformly absorbed by the adhesive member.
第１図ａは弾性表面波デバイスの原理構造を示
す模式平面図、第１図ｂは第１図ａのＸーX′断
面を示す断面図、第２図は従来の弾性表面波デバ
イスを示す断面図、第３図は本考案の弾性表面波
デバイスの実施例を示す模式断面図、第４図ａ，
ｂは本考案の弾性表面波デバイスの製造方法を説
明するための模式図である。
２……圧電性基板、３……入力電極、５……出
力電極、１１，５７……接着部材、１２，４１…
…ステム、２２，３３，５５……ステム面、１
５，３７……ステム裏面、１８，３２……丸味。
Figure 1a is a schematic plan view showing the principle structure of a surface acoustic wave device, Figure 1b is a sectional view taken along the line X-X' in Figure 1a, and Figure 2 shows a conventional surface acoustic wave device. 3 is a schematic sectional view showing an embodiment of the surface acoustic wave device of the present invention, and FIG. 4a,
b is a schematic diagram for explaining the manufacturing method of the surface acoustic wave device of the present invention. 2... Piezoelectric substrate, 3... Input electrode, 5... Output electrode, 11, 57... Adhesive member, 12, 41...
... Stem, 22, 33, 55 ... Stem surface, 1
5, 37... Back side of stem, 18, 32... Roundness.
Claims (1)
電極及び出力電極が形成された弾性表面波素子を
接着部材を介して基台に載置固定された弾性表面
波デバイスにおいて、前記弾性表面波素子が載置
固定された前記基台面の凹凸は略10μｍ以下であ
ることを特徴とする弾性表面波デバイス。 In a surface acoustic wave device in which a surface acoustic wave element having at least an input electrode and an output electrode formed on one main surface of a piezoelectric substrate is mounted and fixed on a base via an adhesive member, the surface acoustic wave element is mounted. A surface acoustic wave device characterized in that the unevenness of the fixed base surface is approximately 10 μm or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16111882U JPS5967028U (en) | 1982-10-26 | 1982-10-26 | surface acoustic wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16111882U JPS5967028U (en) | 1982-10-26 | 1982-10-26 | surface acoustic wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5967028U JPS5967028U (en) | 1984-05-07 |
| JPH0215393Y2 true JPH0215393Y2 (en) | 1990-04-25 |
Family
ID=30354181
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16111882U Granted JPS5967028U (en) | 1982-10-26 | 1982-10-26 | surface acoustic wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5967028U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5558540A (en) * | 1978-10-25 | 1980-05-01 | Nec Home Electronics Ltd | Manufacture of semiconductor device |
| JPS57156873A (en) * | 1981-03-23 | 1982-09-28 | Fujitsu Ltd | Manufacture of metallic stem |
-
1982
- 1982-10-26 JP JP16111882U patent/JPS5967028U/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5558540A (en) * | 1978-10-25 | 1980-05-01 | Nec Home Electronics Ltd | Manufacture of semiconductor device |
| JPS57156873A (en) * | 1981-03-23 | 1982-09-28 | Fujitsu Ltd | Manufacture of metallic stem |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5967028U (en) | 1984-05-07 |
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