JPH0140800B2 - - Google Patents

Info

Publication number
JPH0140800B2
JPH0140800B2 JP4046984A JP4046984A JPH0140800B2 JP H0140800 B2 JPH0140800 B2 JP H0140800B2 JP 4046984 A JP4046984 A JP 4046984A JP 4046984 A JP4046984 A JP 4046984A JP H0140800 B2 JPH0140800 B2 JP H0140800B2
Authority
JP
Japan
Prior art keywords
single crystal
silicon
pulling
crystal
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP4046984A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60186498A (ja
Inventor
Mitsuhiro Yamato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Coorstek KK
Original Assignee
Toshiba Ceramics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Ceramics Co Ltd filed Critical Toshiba Ceramics Co Ltd
Priority to JP4046984A priority Critical patent/JPS60186498A/ja
Publication of JPS60186498A publication Critical patent/JPS60186498A/ja
Publication of JPH0140800B2 publication Critical patent/JPH0140800B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP4046984A 1984-03-05 1984-03-05 半導体単結晶の製造方法 Granted JPS60186498A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4046984A JPS60186498A (ja) 1984-03-05 1984-03-05 半導体単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4046984A JPS60186498A (ja) 1984-03-05 1984-03-05 半導体単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS60186498A JPS60186498A (ja) 1985-09-21
JPH0140800B2 true JPH0140800B2 (en, 2012) 1989-08-31

Family

ID=12581492

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4046984A Granted JPS60186498A (ja) 1984-03-05 1984-03-05 半導体単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS60186498A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5408952A (en) * 1991-04-26 1995-04-25 Mitsubishi Materials Corporation Single crystal growth method
CN104278320A (zh) * 2013-07-04 2015-01-14 有研新材料股份有限公司 一种用于测量直拉硅单晶炉中硅熔体液面位置的装置

Also Published As

Publication number Publication date
JPS60186498A (ja) 1985-09-21

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