JPH0139660B2 - - Google Patents

Info

Publication number
JPH0139660B2
JPH0139660B2 JP57144701A JP14470182A JPH0139660B2 JP H0139660 B2 JPH0139660 B2 JP H0139660B2 JP 57144701 A JP57144701 A JP 57144701A JP 14470182 A JP14470182 A JP 14470182A JP H0139660 B2 JPH0139660 B2 JP H0139660B2
Authority
JP
Japan
Prior art keywords
package
optical fiber
metal sleeve
thyristor
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57144701A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5934662A (ja
Inventor
Tsunemichi Otai
Katsumi Akabane
Tadashi Sakagami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57144701A priority Critical patent/JPS5934662A/ja
Publication of JPS5934662A publication Critical patent/JPS5934662A/ja
Publication of JPH0139660B2 publication Critical patent/JPH0139660B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263Photothyristors
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4201Packages, e.g. shape, construction, internal or external details
    • G02B6/4204Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/421Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4295Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Thyristors (AREA)
JP57144701A 1982-08-23 1982-08-23 光直接点弧サイリスタ Granted JPS5934662A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57144701A JPS5934662A (ja) 1982-08-23 1982-08-23 光直接点弧サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57144701A JPS5934662A (ja) 1982-08-23 1982-08-23 光直接点弧サイリスタ

Publications (2)

Publication Number Publication Date
JPS5934662A JPS5934662A (ja) 1984-02-25
JPH0139660B2 true JPH0139660B2 (cg-RX-API-DMAC7.html) 1989-08-22

Family

ID=15368264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57144701A Granted JPS5934662A (ja) 1982-08-23 1982-08-23 光直接点弧サイリスタ

Country Status (1)

Country Link
JP (1) JPS5934662A (cg-RX-API-DMAC7.html)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07118532B2 (ja) * 1986-03-19 1995-12-18 株式会社東芝 光駆動型半導体装置
JPH08228564A (ja) * 1996-01-23 1996-09-10 Iseki & Co Ltd 乗用型コンバイン

Also Published As

Publication number Publication date
JPS5934662A (ja) 1984-02-25

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