JPS5934662A - 光直接点弧サイリスタ - Google Patents

光直接点弧サイリスタ

Info

Publication number
JPS5934662A
JPS5934662A JP57144701A JP14470182A JPS5934662A JP S5934662 A JPS5934662 A JP S5934662A JP 57144701 A JP57144701 A JP 57144701A JP 14470182 A JP14470182 A JP 14470182A JP S5934662 A JPS5934662 A JP S5934662A
Authority
JP
Japan
Prior art keywords
optical fiber
package
metallic sleeve
thyristor
fiber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57144701A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0139660B2 (cg-RX-API-DMAC7.html
Inventor
Tsunemichi Otai
小田井　恒吾
Katsumi Akabane
赤羽根　克己
Tadashi Sakagami
阪上　正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57144701A priority Critical patent/JPS5934662A/ja
Publication of JPS5934662A publication Critical patent/JPS5934662A/ja
Publication of JPH0139660B2 publication Critical patent/JPH0139660B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/26—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having three or more potential barriers, e.g. photothyristors
    • H10F30/263—Photothyristors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
    • G02B6/421—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms the intermediate optical component consisting of a short length of fibre, e.g. fibre stub
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Light Receiving Elements (AREA)
  • Thyristors (AREA)
JP57144701A 1982-08-23 1982-08-23 光直接点弧サイリスタ Granted JPS5934662A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57144701A JPS5934662A (ja) 1982-08-23 1982-08-23 光直接点弧サイリスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57144701A JPS5934662A (ja) 1982-08-23 1982-08-23 光直接点弧サイリスタ

Publications (2)

Publication Number Publication Date
JPS5934662A true JPS5934662A (ja) 1984-02-25
JPH0139660B2 JPH0139660B2 (cg-RX-API-DMAC7.html) 1989-08-22

Family

ID=15368264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57144701A Granted JPS5934662A (ja) 1982-08-23 1982-08-23 光直接点弧サイリスタ

Country Status (1)

Country Link
JP (1) JPS5934662A (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217663A (ja) * 1986-03-19 1987-09-25 Toshiba Corp 光駆動型半導体装置
JPH08228564A (ja) * 1996-01-23 1996-09-10 Iseki & Co Ltd 乗用型コンバイン

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217663A (ja) * 1986-03-19 1987-09-25 Toshiba Corp 光駆動型半導体装置
JPH08228564A (ja) * 1996-01-23 1996-09-10 Iseki & Co Ltd 乗用型コンバイン

Also Published As

Publication number Publication date
JPH0139660B2 (cg-RX-API-DMAC7.html) 1989-08-22

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