JPH0135800B2 - - Google Patents
Info
- Publication number
- JPH0135800B2 JPH0135800B2 JP22615783A JP22615783A JPH0135800B2 JP H0135800 B2 JPH0135800 B2 JP H0135800B2 JP 22615783 A JP22615783 A JP 22615783A JP 22615783 A JP22615783 A JP 22615783A JP H0135800 B2 JPH0135800 B2 JP H0135800B2
- Authority
- JP
- Japan
- Prior art keywords
- ingot
- cleavage
- plane
- grindstone
- cleavage plane
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000003776 cleavage reaction Methods 0.000 claims description 47
- 230000007017 scission Effects 0.000 claims description 47
- 239000013078 crystal Substances 0.000 claims description 17
- 239000004065 semiconductor Substances 0.000 claims description 10
- 150000001875 compounds Chemical class 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 6
- 238000000926 separation method Methods 0.000 claims description 4
- 101100008046 Caenorhabditis elegans cut-2 gene Proteins 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 22
- 238000012360 testing method Methods 0.000 description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 241001272720 Medialuna californiensis Species 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22615783A JPS60118698A (ja) | 1983-11-29 | 1983-11-29 | 化合物半導体単結晶のｏｆ面出法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22615783A JPS60118698A (ja) | 1983-11-29 | 1983-11-29 | 化合物半導体単結晶のｏｆ面出法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60118698A JPS60118698A (ja) | 1985-06-26 |
| JPH0135800B2 true JPH0135800B2 (de) | 1989-07-27 |
Family
ID=16840752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22615783A Granted JPS60118698A (ja) | 1983-11-29 | 1983-11-29 | 化合物半導体単結晶のｏｆ面出法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60118698A (de) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102528951A (zh) * | 2010-12-28 | 2012-07-04 | 湖北泰晶电子科技有限公司 | 一种取石英晶体籽晶片的方法 |
| CN103101121B (zh) * | 2013-01-06 | 2014-12-10 | 河北同光晶体有限公司 | 一种碳化硅单晶切割线定位的方法 |
-
1983
- 1983-11-29 JP JP22615783A patent/JPS60118698A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60118698A (ja) | 1985-06-26 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |