JPH01319244A - Manufacture of electric bulb - Google Patents
Manufacture of electric bulbInfo
- Publication number
- JPH01319244A JPH01319244A JP15124288A JP15124288A JPH01319244A JP H01319244 A JPH01319244 A JP H01319244A JP 15124288 A JP15124288 A JP 15124288A JP 15124288 A JP15124288 A JP 15124288A JP H01319244 A JPH01319244 A JP H01319244A
- Authority
- JP
- Japan
- Prior art keywords
- light
- thin film
- film
- diffusing
- light scattering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000010409 thin film Substances 0.000 claims abstract description 58
- 239000010408 film Substances 0.000 claims abstract description 38
- 239000011248 coating agent Substances 0.000 claims abstract description 17
- 238000000576 coating method Methods 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 17
- 238000007598 dipping method Methods 0.000 claims abstract description 14
- 239000000843 powder Substances 0.000 claims abstract description 13
- 239000007788 liquid Substances 0.000 claims abstract description 12
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 10
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 8
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 15
- 238000000149 argon plasma sintering Methods 0.000 abstract description 9
- 230000005855 radiation Effects 0.000 abstract description 3
- 230000002452 interceptive effect Effects 0.000 abstract 5
- 230000003287 optical effect Effects 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000010410 layer Substances 0.000 description 8
- DLYUQMMRRRQYAE-UHFFFAOYSA-N tetraphosphorus decaoxide Chemical compound O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、電球の製造方法に関し、特に放射光に特徴の
ある電球の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a method of manufacturing a light bulb, and particularly to a method of manufacturing a light bulb characterized by emitted light.
電球は、一般に種々の分野で用いられているが、例えば
複写機の露光用光源、その他の光学装置等に用いられる
電球においては、■放射効率の高い良好な分光特性が得
られること、■リップルが小さ（て照度の均一性が高い
こと、が要求されている。Light bulbs are generally used in a variety of fields, but for example, light bulbs used for exposure light sources in copying machines and other optical devices have two characteristics: ■ Good spectral characteristics with high radiation efficiency; ■ Ripple It is required that the illuminance be small (and that the uniformity of illuminance be high).
従来、放射効率の高い良好な分光特性を得るための手段
としては、ガラス製発光管の外表面に多層構成の光干渉
膜を設ける手段が知られている。BACKGROUND ART Conventionally, as a means for obtaining good spectral characteristics with high radiation efficiency, there has been known a method of providing a multilayer optical interference film on the outer surface of a glass arc tube.
また、リップルが小さくて照度の均一性が高い放射光を
得る手段としては、ガラス製発光管の外表面を例えばサ
ンドブラスト等によりフロスト加工して散光面とする手
段が知られている。Furthermore, as a means for obtaining synchronized light with small ripples and high uniformity of illuminance, it is known to frost the outer surface of a glass arc tube by sandblasting or the like to form a light diffusing surface.
しかし、ガラス製封体管の外表面に光干渉膜を設けたう
え、さらにサンドブラスト等によりフロスト加工して散
光面とする場合には、当該光干渉膜が損傷し、光干渉膜
の所期の性能が発揮されない問題がある。However, if an optical interference film is provided on the outer surface of the glass envelope tube and then frosted by sandblasting etc. to create a light diffusing surface, the optical interference film will be damaged and the intended purpose of the optical interference film may be damaged. There is a problem with performance not being achieved.
本発明は以上の如き事情に基づいてなされたものであっ
て、その目的は、光干渉膜の所期の性能が安定に発揮さ
れ、しかもリップルが小さくて照度の均一性が高い放射
光が得られる電球の製造方法を提供することにある。The present invention has been made based on the above circumstances, and its purpose is to stably exhibit the desired performance of an optical interference film, and to obtain synchrotron radiation with small ripples and high uniformity of illuminance. The purpose of the present invention is to provide a method for manufacturing a light bulb that can
上記目的を達成するため、本発明は、ガラス製封体管の
外表面に多層構成の光干渉膜を設け、当該光干渉膜の表
面にさらに散光性薄膜を設けてなる電球の製造方法であ
って、前記散光性薄膜を、シリコン化合物の溶液にセラ
ミック材料の微粉末を分散してなる被覆液を用いてディ
ッピング法により形成することを特徴とする。In order to achieve the above object, the present invention provides a method for manufacturing a light bulb, which comprises providing a multi-layered optical interference film on the outer surface of a glass envelope tube, and further providing a light-diffusing thin film on the surface of the optical interference film. The light-diffusing thin film is formed by a dipping method using a coating liquid in which fine powder of a ceramic material is dispersed in a solution of a silicon compound.
また、散光性薄膜の表面にさらに補強用薄膜を形成する
ことを特徴とする。Moreover, a reinforcing thin film is further formed on the surface of the light-diffusing thin film.
ガラス製封体管の外表面に多層構成の光干渉膜を設け、
この光干渉膜の外面に、特定の被覆液を用いてディッピ
ング法により散光性薄膜を形成すると、光干渉膜をなん
ら損傷することなく十分な散光性を有する散光性薄膜が
形成される。A multilayer optical interference film is provided on the outer surface of the glass envelope tube,
When a light-diffusing thin film is formed on the outer surface of this light interference film by a dipping method using a specific coating liquid, a light-diffusing thin film having sufficient light-diffusing properties is formed without damaging the light interference film in any way.
また、散光性薄膜の表面にさらに補強用薄膜を形成する
と、散光性薄膜の付着強度が高まる。Furthermore, if a reinforcing thin film is further formed on the surface of the light-diffusing thin film, the adhesion strength of the light-diffusing thin film is increased.
以下、本発明の構成を具体的に説明する。 Hereinafter, the configuration of the present invention will be specifically explained.
第１図は、本発明に係る電球の製造方法によって製造さ
れた電球の一例を示す説明図である。同図において、１
０はガラス製発光管、１１はフィラメント、２０！−！
多層構成の光干渉膜、３０は散光性薄膜、４０は口金で
ある。ガラス製発光管１０は例ズば石英ガラス製であり
、その内部には例えばハロゲンが封入されている。FIG. 1 is an explanatory diagram showing an example of a light bulb manufactured by the light bulb manufacturing method according to the present invention. In the same figure, 1
0 is a glass arc tube, 11 is a filament, 20! -!
The optical interference film has a multilayer structure, 30 is a light-diffusing thin film, and 40 is a base. The glass arc tube 10 is made of, for example, quartz glass, and has, for example, halogen sealed therein.
本発明においては、以下のようにして電球を製造する。In the present invention, a light bulb is manufactured as follows.
（１）ガラス製封体管１０の外表面に多層構成の光干渉
膜２０を設ける。この光干渉膜２０は、特定波長域の光
の透過率または反射率を制御１７、て所望の分光特性を
得るためのものである。具体的には、高屈折率層と、低
屈折率層どを交互に積層して構成することができる。(1) A multilayer optical interference film 20 is provided on the outer surface of the glass enclosure tube 10. This optical interference film 20 is for controlling 17 the transmittance or reflectance of light in a specific wavelength range to obtain desired spectral characteristics. Specifically, it can be constructed by alternately stacking high refractive index layers and low refractive index layers.
例えば赤外域の光を主として反射する赤外線反射膜とし
、ての機能を有する光干渉膜２０は、酸化チタン（Ｔ１
０２）、二酸化ケイ素（Ｓｉｎ２）等よりなる２種以上
の層を交互に積層して形成することができる。For example, the optical interference film 20, which has the function of an infrared reflective film that mainly reflects light in the infrared region, is made of titanium oxide (T1
02), silicon dioxide (Sin2), etc., can be formed by alternately stacking two or more layers.
光干渉＠２Ｑは、例えば蒸着法、ディッピング法等の薄
膜形成手段により形成することができ、その形成手段は
特に限定されない。The optical interference @2Q can be formed by a thin film forming method such as a vapor deposition method or a dipping method, and the forming method is not particularly limited.
（２）以上のようにしてガラス製封体管１０の外表面に
光干渉膜２０を形成した後、シリコン化合物の溶液にセ
ラミック材料の微粉末を分散してなる被覆液を用いてデ
ィッピング法により、上記光干渉膜２０の表面にさらに
散光性薄１１９！３０を形成する。(2) After forming the optical interference film 20 on the outer surface of the glass enclosure tube 10 as described above, a dipping method is performed using a coating liquid made by dispersing fine powder of a ceramic material in a solution of a silicon compound. , a light-diffusing thin layer 119!30 is further formed on the surface of the optical interference film 20.
シリコン化合物の溶液としては、例えばシリコンアルコ
レートに、エタノーノベ酢酸、塩酸等を加え、これらを
反応させて得られる溶液を好ましく用いることができる
。As the solution of the silicon compound, for example, a solution obtained by adding ethanolanobeacetic acid, hydrochloric acid, etc. to silicon alcoholate and reacting them can be preferably used.
特に、シリコンアルコレートを用いて調製すると、散光
性薄膜３０の光干渉膜２０に対する付着性が向上する。In particular, when prepared using silicon alcoholate, the adhesion of the light-diffusing thin film 30 to the light interference film 20 is improved.
また、シリコン化合物の溶液には、さらに必要に応じて
五酸化リン等の特性改良剤を添加してもよい。この五酸
化リンは、散光性薄膜３０の膜強度を高めるうえで好ま
しいものである、。Further, a property improving agent such as phosphorus pentoxide may be further added to the silicon compound solution as necessary. This phosphorus pentoxide is preferable for increasing the film strength of the light-diffusing thin film 30.
セラミック材料の微粉末としては、例えば二酸化ケイ素
（Ｓ ｉ ０２）の微粉末を主成分とし、これに必要に
応じて例えば酸化アルミニウム（Δ１２０．）、酸化チ
タン（Ｔｉ０２）Ｓ酸化ジルコニウム（Ｚｒ０２）等の
＠粉末を加えたものを好ま１７＜用いることができる。As the fine powder of the ceramic material, for example, the main component is fine powder of silicon dioxide (S i 02), and if necessary, for example, aluminum oxide (Δ120.), titanium oxide (Ti02), S zirconium oxide (Zr02), etc. are added. It is preferable to use a powder to which 17< powder is added.
斯かる微粉末の粒子径はＯ，］、ｕｍ〜数ＪＪ肩程度が
よい。The particle diameter of such fine powder is preferably about 0,], um to several JJ.
散光性薄膜３０は、上記被覆液を用いてディッピング法
で形成する。すなわち、第２図〜第４図（こ示すように
、被覆液５０中に、外表面に光干渉膜２０が形成された
ガラス製封体管１０をほぼ垂直に下降させて浸漬した後
、当該ガラス製封体管ｌＯを上方にほぼ垂直に引上げる
。次いで、このガラス製封体管１０を加熱して表面のデ
ィッピング膜を乾燥（，５、さらに乾燥した膜を例えば
電気炉等により加熱１−で焼成し、もって第５図に示す
ように、セラミック材料の微粉末が分散含有されてなる
散光性薄膜３０を得る。この散光性薄膜３０の厚さは例
えば０．５〜Ｉｏｎ程度である。The light-diffusing thin film 30 is formed by a dipping method using the above coating liquid. That is, as shown in FIGS. 2 to 4, after lowering and immersing the glass enclosure tube 10 with the optical interference film 20 formed on the outer surface in the coating liquid 50 almost vertically, The glass envelope tube 10 is pulled up almost perpendicularly. Next, the glass envelope tube 10 is heated to dry the dipping film on the surface (5), and the dried film is heated in an electric furnace, etc. As shown in FIG. 5, a light-diffusing thin film 30 in which fine powder of a ceramic material is dispersed is obtained.The thickness of this light-diffusing thin film 30 is, for example, about 0.5 to ion. .
散光性薄膜３０は、上記の薄膜形成工程を１回だけ遂行
して単層構成としてもよいし、さらには必要に応じて上
記の薄膜形成工程を複数回繰返して遂行して２層以上の
積層構成としてもよい。２層以上の積層構成とする場合
には、散光性薄膜３０の厚さを相当大きな自由度で調整
することができる。The light-diffusing thin film 30 may be formed into a single layer structure by performing the above thin film forming process only once, or may be formed into a laminate of two or more layers by repeating the above thin film forming process multiple times as necessary. It may also be a configuration. In the case of a laminated structure of two or more layers, the thickness of the light-diffusing thin film 30 can be adjusted with a considerably large degree of freedom.
また、箪６図に示すように、上記の散光性薄膜３００表
面にさらに例えば二酸化ケイ素等よりなる補強用薄膜６
０を設けることにより、散光性薄膜３０の付着強度を高
めることができる。この補強用薄膜６０は、例えば散光
性薄膜の形成に用いる上記シリコン化合物の溶液と同様
の溶液を被覆液として用いて、ディッピング法により形
成することができる。Further, as shown in Figure 6, a reinforcing thin film 6 made of silicon dioxide or the like is further added to the surface of the light-diffusing thin film 300.
By providing 0, the adhesion strength of the light-diffusing thin film 30 can be increased. This reinforcing thin film 60 can be formed, for example, by a dipping method using a solution similar to the above silicon compound solution used for forming the light-diffusing thin film as a coating liquid.
以下、本発明の実施例を具体的に説明するが、本発明が
これらの実施例に限定されるものではない。Examples of the present invention will be specifically described below, but the present invention is not limited to these Examples.
（光干渉膜の形成）
長さ３Ｑｃｍ、外径Ｑ、 ５ｃｍの石英ガラス製封体管
の外表面に、蒸着法により、酸化チタン層と二酸化ケイ
素層とを交互に積層してなる多層構成の赤外線反射特性
を有する光干渉膜を形成した。(Formation of an optical interference film) A multilayer structure consisting of titanium oxide layers and silicon dioxide layers alternately laminated by vapor deposition on the outer surface of a quartz glass enclosure tube with a length of 3Qcm and an outer diameter of Q of 5cm. An optical interference film with infrared reflective properties was formed.
（散光性薄膜の形成）
シリコンアルコレート（Ｓｉ（ＯＣ２８ｓ）４）と、エ
タノール（Ｃ２ＨａＯＨ）と、酢酸（ＣＨ，Ｃ００Ｈ）
と、塩酸（ＭＣＩ） とを、１ ：１３ ： ３ ：
０．００７ （モル比）となる割合で混合し、これを還
流下で２４時間反応させた後、さらに五酸化リン（Ｐ、
Ｏ，）を３ｉ０２換算濃度で１５重量％となる割合で添
加し、もって被覆液用の溶液を得た。(Formation of light-diffusing thin film) Silicon alcoholate (Si(OC28s)4), ethanol (C2HaOH), and acetic acid (CH,C00H)
and hydrochloric acid (MCI), 1:13:3:
After mixing at a ratio of 0.007 (molar ratio) and reacting under reflux for 24 hours, phosphorus pentoxide (P,
O,) was added at a ratio of 15% by weight in terms of 3i02 concentration to obtain a coating solution.
この被覆液用の溶液５００ｍ１に、それぞれ後記第１表
に示すセラミック材料の微粉末を添加し、これを分散し
て各被覆液を得た。Fine powders of ceramic materials shown in Table 1 below were added to 500 ml of this coating liquid solution, and the powder was dispersed to obtain each coating liquid.
これらの被覆液を用いてディッピング法による薄膜形成
工程を後記第１表に示す回数遂行して、上記光干渉膜の
表面に単層構成または積層構成の散光性薄膜を形成した
。Using these coating solutions, a thin film forming process by dipping was performed the number of times shown in Table 1 below to form a light-diffusing thin film with a single layer or a laminated structure on the surface of the optical interference film.
なあ、ディッピング条件および焼成条件は次の通りであ
る。The dipping conditions and baking conditions are as follows.
〈１）ディッピング条件
引上げ雰囲気を温度１０℃、相対湿度３０％とし、引上
げ速度を１１ｍｍ／ｓｅｃとした。<1) Dipping conditions The temperature of the pulling atmosphere was 10° C., the relative humidity was 30%, and the pulling speed was 11 mm/sec.
（２）焼成条件
ドライオーブンにより１２０℃で５分間乾燥した後、電
気炉により６００℃で１０分間焼成した。(2) Firing Conditions After drying at 120°C for 5 minutes in a dry oven, it was fired at 600°C for 10 minutes in an electric furnace.
また、一部の実施例においては、さらに、上記散光性薄
膜の形成に用いた被覆液用の溶液と同様の組成の溶液を
被覆液として用い、引上げ速度を８．９ ｍｍ／ｓｅｃ
としたほかは上記散光性薄膜の形成と同様の条件で薄膜
形成工程を後記第１表に示す回数遂行し、もって上記散
光性薄膜の表面に二酸化ケイ素よりなる補強用薄膜を形
成した。In some examples, a solution having the same composition as the coating solution used to form the light-diffusing thin film was used as the coating solution, and the pulling rate was set at 8.9 mm/sec.
The thin film forming process was performed the number of times shown in Table 1 below under the same conditions as for the formation of the light-diffusing thin film, except that a reinforcing thin film made of silicon dioxide was formed on the surface of the light-diffusing thin film.
以上のようにして製造された各電球について、散光性薄
膜の性能右よび付着強度を評価した。結果を後記第１表
に併せて示す。For each light bulb manufactured as described above, the performance and adhesion strength of the light-diffusing thin film were evaluated. The results are also shown in Table 1 below.
なお、散光性薄膜の付着強度は、次のようにして評価し
た。すなわち、粘着テープを散光性薄膜または補強用薄
膜の上から貼付した後、当該粘着テープをゆっくりと引
き剥がす試験を行い、散光性薄膜の剥離が生ずるか否か
を目視により副べた。The adhesion strength of the light-diffusing thin film was evaluated as follows. That is, a test was conducted in which an adhesive tape was pasted onto a light-diffusing thin film or a reinforcing thin film, and then the adhesive tape was slowly peeled off, and whether or not the light-diffusing thin film peeled off was visually observed.
評価は、散光性薄膜の剥離が生ぜず十分な付着強度を有
していた場合を「○」、「Ｏ」より若干劣るが実用上問
題のない場合を「Δ」、「△」より若干劣るが実用上問
題のない場合を「△△」、実用的には問題のある場合を
ｒｘ、とした。The evaluation is "○" when the light-diffusing thin film does not peel off and has sufficient adhesion strength, "Δ" when it is slightly inferior to "O" but has no practical problems, and slightly inferior to "△". The case where there is no practical problem is marked as "Δ△", and the case where there is a practical problem is marked as rx.
以上説明したように、本発明によれば、ガラス製封体管
の外表面に多層構成の光干渉膜を設け、この光干渉膜の
外面に、特定の被覆液を用いてディッピング法により吸
光性薄膜を形成するので、光干渉膜の所期の性能を確実
に発揮させることができるうえ散光性薄膜により優れた
散光特性が発揮される電球を製造することができる。As explained above, according to the present invention, a multilayered optical interference film is provided on the outer surface of a glass envelope tube, and the outer surface of this optical interference film is made to absorb light by dipping with a specific coating liquid. Since a thin film is formed, the desired performance of the light interference film can be reliably exhibited, and a light bulb can be manufactured that exhibits excellent light scattering properties due to the light scattering thin film.
そして、被覆液がシリコン化合物の溶液にセラミック材
料の微粉末を分散してなるので、散光性薄膜の光干渉膜
に対する付着性を高めることができる。Since the coating liquid is made by dispersing fine powder of a ceramic material in a solution of a silicon compound, it is possible to improve the adhesion of the light-diffusing thin film to the light interference film.
また、散光性薄膜の表面にさらに補強用薄膜を形成する
ことにより、散光性薄膜の付着強度を高めることができ
て耐久性の優れた電球を製造することができる。Further, by further forming a reinforcing thin film on the surface of the light-diffusing thin film, the adhesion strength of the light-diffusing thin film can be increased, and a light bulb with excellent durability can be manufactured.
なお、本発明の方法により製造された電球は、光源とし
て各種の分野に利用することができ、その用途は特に限
定されない。Note that the light bulb manufactured by the method of the present invention can be used as a light source in various fields, and its uses are not particularly limited.
第１図は本発明の方法により製造された電球の一例の概
略を示す説明用断面図、第２図〜第４図はディッピング
法の説明図、第５図は散光性薄膜の説明用断面図、第６
図は補強用薄膜の説明用断面図である。
１０・・・ガラス製発光管 １１・・・フィラメント
２０・・・光干渉膜 ３０・・・散光性薄膜４
０・・・口金 ５０・・・被覆液６０・・
・補強用薄膜Fig. 1 is an explanatory cross-sectional view showing an outline of an example of a light bulb manufactured by the method of the present invention, Figs. 2 to 4 are explanatory views of the dipping method, and Fig. 5 is an explanatory cross-sectional view of a light-diffusing thin film. , 6th
The figure is an explanatory cross-sectional view of the reinforcing thin film. 10...Glass arc tube 11...Filament 20...Light interference film 30...Diffusing thin film 4
0... Mouthpiece 50... Coating liquid 60...
・Thin reinforcement film
Claims (2)
設け、当該光干渉膜の表面にさらに散光性薄膜を設けて
なる電球の製造方法であって、前記散光性薄膜を、シリ
コン化合物の溶液にセラミック材料の微粉末を分散して
なる被覆液を用いてディッピング法により形成すること
を特徴とする電球の製造方法。(1) A method for manufacturing a light bulb, which comprises providing a multilayered light interference film on the outer surface of a glass envelope tube, and further providing a light-diffusing thin film on the surface of the light-diffusing film, the method comprising: 1. A method of manufacturing a light bulb, characterized in that the light bulb is formed by a dipping method using a coating liquid made by dispersing fine powder of a ceramic material in a solution of a silicon compound.
ことを特徴とする請求項１に記載の電球の製造方法。(2) The method for manufacturing a light bulb according to claim 1, further comprising forming a reinforcing thin film on the surface of the light-diffusing thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63151242A JP2902404B2 (en) | 1988-06-21 | 1988-06-21 | How to make a light bulb |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63151242A JP2902404B2 (en) | 1988-06-21 | 1988-06-21 | How to make a light bulb |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01319244A true JPH01319244A (en) | 1989-12-25 |
| JP2902404B2 JP2902404B2 (en) | 1999-06-07 |
Family
ID=15514366
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63151242A Expired - Fee Related JP2902404B2 (en) | 1988-06-21 | 1988-06-21 | How to make a light bulb |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2902404B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005032215A1 (en) * | 2003-09-30 | 2005-04-07 | Harison Toshiba Lighting Corp. | Tube and ball |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59221968A (en) * | 1983-05-31 | 1984-12-13 | 東芝ライテック株式会社 | Method of forming scattering membrane |
| JPS6188449A (en) * | 1984-10-08 | 1986-05-06 | 東芝硝子株式会社 | Protective film for reflector |
-
1988
- 1988-06-21 JP JP63151242A patent/JP2902404B2/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59221968A (en) * | 1983-05-31 | 1984-12-13 | 東芝ライテック株式会社 | Method of forming scattering membrane |
| JPS6188449A (en) * | 1984-10-08 | 1986-05-06 | 東芝硝子株式会社 | Protective film for reflector |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005032215A1 (en) * | 2003-09-30 | 2005-04-07 | Harison Toshiba Lighting Corp. | Tube and ball |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2902404B2 (en) | 1999-06-07 |
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