JPH0131698B2 - - Google Patents
Info
- Publication number
- JPH0131698B2 JPH0131698B2 JP58016078A JP1607883A JPH0131698B2 JP H0131698 B2 JPH0131698 B2 JP H0131698B2 JP 58016078 A JP58016078 A JP 58016078A JP 1607883 A JP1607883 A JP 1607883A JP H0131698 B2 JPH0131698 B2 JP H0131698B2
- Authority
- JP
- Japan
- Prior art keywords
- thin plate
- silicon carbide
- ceramic
- bonding
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 148
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 147
- 239000000758 substrate Substances 0.000 claims description 77
- 239000000919 ceramic Substances 0.000 claims description 75
- 239000000203 mixture Substances 0.000 claims description 23
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 20
- 229910052863 mullite Inorganic materials 0.000 claims description 20
- 239000012298 atmosphere Substances 0.000 claims description 19
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 18
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000010292 electrical insulation Methods 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 16
- 239000007767 bonding agent Substances 0.000 claims description 15
- 229910052745 lead Inorganic materials 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 229910052787 antimony Inorganic materials 0.000 claims description 13
- 229910052725 zinc Inorganic materials 0.000 claims description 13
- 229910052793 cadmium Inorganic materials 0.000 claims description 12
- 229910052732 germanium Inorganic materials 0.000 claims description 12
- 229910052718 tin Inorganic materials 0.000 claims description 12
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 229910052741 iridium Inorganic materials 0.000 claims description 11
- 229910052749 magnesium Inorganic materials 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 11
- 229910052763 palladium Inorganic materials 0.000 claims description 11
- 229910052697 platinum Inorganic materials 0.000 claims description 11
- 229910052851 sillimanite Inorganic materials 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 229910052804 chromium Inorganic materials 0.000 claims description 10
- 229910052878 cordierite Inorganic materials 0.000 claims description 10
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052738 indium Inorganic materials 0.000 claims description 10
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 229910052720 vanadium Inorganic materials 0.000 claims description 10
- 229910052726 zirconium Inorganic materials 0.000 claims description 10
- 229910052742 iron Inorganic materials 0.000 claims description 9
- 229910052748 manganese Inorganic materials 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 229910052703 rhodium Inorganic materials 0.000 claims description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910052845 zircon Inorganic materials 0.000 claims description 6
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 89
- 238000010438 heat treatment Methods 0.000 description 13
- 239000000843 powder Substances 0.000 description 11
- 239000011701 zinc Substances 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 9
- 238000010304 firing Methods 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 8
- 230000035882 stress Effects 0.000 description 8
- 239000011521 glass Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008646 thermal stress Effects 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 229910052582 BN Inorganic materials 0.000 description 3
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052788 barium Inorganic materials 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052797 bismuth Inorganic materials 0.000 description 3
- 229910052791 calcium Inorganic materials 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 210000003298 dental enamel Anatomy 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052744 lithium Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- -1 sialon Chemical compound 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 229910052712 strontium Inorganic materials 0.000 description 3
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- GOLCXWYRSKYTSP-UHFFFAOYSA-N Arsenious Acid Chemical compound O1[As]2O[As]1O2 GOLCXWYRSKYTSP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- 239000001110 calcium chloride Substances 0.000 description 2
- 229910001628 calcium chloride Inorganic materials 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000001988 toxicity Effects 0.000 description 2
- 231100000419 toxicity Toxicity 0.000 description 2
- 229910015365 Au—Si Inorganic materials 0.000 description 1
- 101100203596 Caenorhabditis elegans sol-1 gene Proteins 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 229910000925 Cd alloy Inorganic materials 0.000 description 1
- 229910017518 Cu Zn Inorganic materials 0.000 description 1
- 229910017752 Cu-Zn Inorganic materials 0.000 description 1
- 229910017943 Cu—Zn Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 229910021541 Vanadium(III) oxide Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910007570 Zn-Al Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000006023 eutectic alloy Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- YADSGOSSYOOKMP-UHFFFAOYSA-N lead dioxide Inorganic materials O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 1
- XMFOQHDPRMAJNU-UHFFFAOYSA-N lead(II,IV) oxide Inorganic materials O1[Pb]O[Pb]11O[Pb]O1 XMFOQHDPRMAJNU-UHFFFAOYSA-N 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- NOTVAPJNGZMVSD-UHFFFAOYSA-N potassium monoxide Inorganic materials [K]O[K] NOTVAPJNGZMVSD-UHFFFAOYSA-N 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Description
本発明は、集積回路用基板あるいはICパツケ
ージ用材料として用いられる電子回路用炭化珪素
質基板の製造方法に係り、特に本発明は、炭化珪
素質薄板の表面にセラミツクス薄板が接合されて
なる電子回路用炭化珪素質基板の製造方法に関す
る。
近年電子工業技術の進歩に伴い、電子機器に対
する高密度化あるいは演算機能の高速化が進めら
れている。その結果、集積回路内における発熱量
が増加するため、集積回路の性能を確保し、高い
信頼性を維持することが困難になるという問題が
生じる。したがつて、集積回路用基板あるいは
ICパツケージ用材料としての電子回路用基板に
は電気的絶縁性、気密性、機械的強度などの特性
に加えて、放熱特性に優れることが要求されてい
る。
ところで、従来電子回路用基板としては種々の
ものが知られ実用化されており、特に信頼性の要
求される用途に対しては、主としてアルミナ焼結
体基板（以下アルミナ焼結体基板を単にアルミナ
基板と称す）が使用されている。しかしながらア
ルミナ基板は熱伝導率が低く、集積回路内におい
て発生した熱の放散特性に劣るため、電子機器の
高密度化あるいは演算機能の高速化を進める上で
極めて大きな障害となつており、またアルミナ基
板は熱膨張率が通常集積回路として使用されるシ
リコンチツプの熱膨張率と大きく異なるため直接
基板上にシリコンチツプを接着して使用すること
が困難である。
前記熱の放散特性における問題を解決するため
に、従来ベリリアあるいはホーロー等を用いた基
板が検討されている。しかしながら、前者のベリ
リア基板はそのベリリアの有する毒性のために製
造および取扱いが困難でしかも高価である欠点を
有し、一方後者のホーロー基板は金属板を基材と
するため熱膨張率が大きく、またフリツトがドグ
ボーン構造になり易く、さらに印刷してからの切
断が困難であるばかりでなく、ホーローにクラツ
クがはいるのでレーザートリミングができない欠
点があつた。
上述の如き欠点を解決するために、特開昭56−
66086号公報に、「炭化ケイ素を主成分とし、これ
に酸化ベリリウム、窒化ホウ素の少なくとも１種
を含む焼結体から成る電気絶縁用基体」に係る発
明が開示されている。しかしながら、この電気絶
縁用基体はホツトプレス法で焼結されるため、量
産が困難でしかも高価であり、さらに酸化ベリリ
ウムを含有する場合にはベリリウムの毒性による
問題を有している。
また、本発明者らは炭化珪素焼結体を電子回路
用基板として適用すべく、炭化珪素焼結体に電気
的絶縁性を付与する方法について種々研究し、先
に特願昭56−209991号により「酸化アルミニウム
と二酸化珪素との共融生成酸化物を主成分とする
密着性に優れた絶縁性表面被膜を有する炭化珪素
基板」およびその製造方法、特願昭56−209992号
により「炭化珪素の表面にSiO2とP2O5、B2O3、
GeO2、As2O3、Sb2O3、Bi2O3、V2O3、ZnO、
PbO、Pb3O4、PbO2、CdO、Na2O、K2O、
Li2O、CaO、MgO、BaO、SrOのなかから選ば
れるいずれか少なくとも１種との共融生成酸化物
を主成分とする絶縁性被膜を有する炭化珪素基
板」およびその製造方法および特願昭57−48958
号により「炭化珪素質基板上に下記の溶着層(イ)を
有し、前記溶着層(イ)上に下記の溶着層(ロ)を有する
ことを特徴とする印加電圧が25Vの場合の絶縁抵
抗値が３×109Ω以上である炭化珪素質基板。(イ)
酸化アルミニウムと二酸化珪素とを主成分とする
溶着層。(ロ)アルミニウム、珪素、リン、ホウ素、
ゲルマニウム、ヒ素、アンチモン、ビスマス、バ
ナジウム、亜鉛、カドミウム、鉛、ナトリウム、
カリウム、リチウム、カルシウム、マグネシウ
ム、バリウム、ストロンチウムより選ばれるいず
れか少なくとも２種の酸化物を主成分とする溶着
層。」およびその製造方法に係る発明を提案して
いる。
ところで、酸化物絶縁性被膜層を形成すること
により電気絶縁性を付与した炭化珪素質基板は炭
化珪素が半導体的な特性を有しており、アルミナ
基板に比較して誘電率の影響を受け易く信号伝搬
速度が遅くなるため、前記酸化物絶縁性被膜層を
厚くして静電容量を小さくすることが要求されて
いる。しかしながら、前記酸化物絶縁性被膜層は
余り厚くすると被膜層と炭化珪素との熱膨張率の
差により、クラツク等の欠陥が生じ易く、場合に
よつては剥離するため、欠陥のない厚い酸化物絶
縁性被膜層を形成することは困難であつた。
また、電子回路用基板には他の回路部品との接
続用として一般にリードピンが設けられる。前記
リードピンには取扱い時において比較的大きな応
力が加わる場合があるため、容易に外れることの
ない程度の接合強度が要求される。しかしなが
ら、前記応力はリードピンの接合部付近に集中す
るため、前述の如き酸化物絶縁性被膜層にリード
ピンを接合すると、被膜層と炭化珪素の接合面か
ら破壊することが多く、強い接合強度を有するリ
ードピンを設けることは困難であつた。
本発明者らは前記炭化珪素質基板の電気的絶縁
性、静電特性およびリードピンの接合性について
種々研究を重ねた結果、炭化珪素質薄板にセラミ
ツクス薄板を接合せしめて第１図に示す如き積層
構造とすることにより、前記諸欠点を解決するこ
とのできることを知見するに至り、本発明者ら
は、先に特願昭57−197765号により「106Ωcm以
上の体積固有抵抗率を有するセラミツクス薄板が
Al、Si、Ｐ、Ｂ、Ge、As、Sb、Bi、Ｖ、Zn、
Cd、Pb、Na、Ｋ、Li、Be、Ca、Mg、Ba、Sr
あるいはZrより選ばれるいずれか少なくとも１
種の酸化物を主成分とする接合層によつて炭化珪
素質薄板の表面に接合されてなる電子回路用炭化
珪素質基板」およびその製造方法に係る発明を提
案している。
前記説明によれば、炭化珪素質薄板にセラミツ
クス薄板を接合せしめた積層構造とすることによ
り、極めて安定した電気的絶縁性、十分に低い静
電容量および優れたリードピンとの接合性等の特
性を有する炭化珪素質基板を得ることができる。
本発明は、前記本発明者らが先に提案した発明
をさらに改良し、炭化珪素質薄板とセラミツクス
薄板とが温度サイクルあるいはサーマルシヨツク
などの熱ストレスによつて破壊され難く、かつ極
めて緻密で気密性に優れた接合層によつて極めて
強固に接合された炭化珪素質基板の製造方法を提
供することを目的とし、炭化珪素質薄板あるいは
セラミツクス薄板の少なくともいずれかにMg、
Al、Si、Sc、Ti、Ｖ、Cr、Mn、Fe、Co、Ni、
Cu、Zn、Ge、Zr、Mo、Rh、Pd、Ag、Cd、In、
Sn、Sb、Te、Ta、Ｗ、Ir、Pt、Au、Tl、Pbあ
るいはBiより選ばれる元素あるいはそれらの化
合物のいずれか少なくとも１種を主成分とする接
合剤組成物を塗布した後、炭化珪素質薄板とセラ
ミツクス薄板を重ねて140〜1700℃の温度範囲内
に加熱することにより、炭化珪素質薄板とセラミ
ツクス薄板との間にMg、Al、Si、Sc、Ti、Ｖ、
Cr、Mn、Fe、Co、Ni、Cu、Zn、Ge、Zr、
Mo、Rh、Pd、Ag、Cd、In、Sn、Sb、Te、
Ta、Ｗ、Ir、Pt、Au、Tl、PbあるいはBiより
選ばれるいずれか少なくとも１種の金属を主成分
とする接合層を形成せしめて接合させることを特
徴とする電気絶縁性に優れた電子回路用炭化珪素
質基板の製造方法によつて前記目的を達成するこ
とができる。
次に本発明を詳細に説明する。
本発明者らは炭化珪素質薄板とセラミツクス薄
板との接合性を改良すべく種々検討した結果、少
なくとも１種の金属を主成分とする接合層によつ
て炭化珪素質薄板とセラミツクス薄板を接合し、
第１図に示す如き積層構造となすことにより、比
較的小量の接合層でもつて極めて強固な接合強度
を得ることができ、しかも炭化珪素質薄板とセラ
ミツクス薄板との熱膨張差により生ずる応力を吸
収・緩和することができることを知見し、電子回
路用基板として極めて優れた特性を有する炭化珪
素質基板を得た。
本発明製造方法にもとづいて得られる炭化珪素
質基板は表面に106Ωcm以上の体積固有抵抗率を
有するセラミツクス薄板が接合されてなる積層構
造とすることが必要である。その理由は、炭化珪
素質薄板の表面に106Ωcm以上の体積固有抵抗率
を有するセラミツクス薄板が接合されてなる積層
構造を有する炭化珪素質基板は、高い印加電圧の
条件下においても信頼性に優れた電気絶縁性を有
し、しかも静電容量が小さく、さらに他の回路部
品との接続用として設けられるリードピンとの接
合性に極めて優れるからである。また前記セラミ
ツクス薄板が106Ωcm以上の体積固有抵抗率を有
するものであることが必要な理由は、前記炭化珪
素質基板には通常、印刷、焼着あるいはエツチン
グ等の手段によつて電子回路が設けられるが、前
記セラミツクス薄板の体積固有抵抗率が106Ωcm
より低いと電気絶縁性を維持することができず、
回路内において短絡状態となるため回路機能が正
常に働かないからであり、より高い信頼性が要求
されるような場合には108Ωcm以上の体積固有抵
抗率を有するセラミツクス薄板であることが有利
である。
前記接合層は少なくとも１種の金属を主成分と
することが必要である。その理由は少なくとも１
種の金属を主成分とする接合層によつて炭化珪素
質薄板とセラミツクス薄板とを接合することによ
り、比較的小量で極めて強固な接合強度を得るこ
とができるばかりでなく、前記金属を主成分とす
る接合層は靭性が高くしかも可塑性を有するため
炭化珪素質薄板とセラミツクス薄板との間にそれ
ぞれの熱膨張差により生ずる応力を吸収・緩和す
ることにより、温度サイクルあるいはサーマルシ
ヨツクなどの熱ストレスによる破壊あるいは剥離
を防止することができ、極めて緻密で気密性に優
れた炭化珪素基板となすことができるからであ
る。
前記接合層はMg、Al、Si、Sc、Ti、Ｖ、Cr、
Mn、Fe、Co、Ni、Cu、Zn、Ge、Zr、Mo、
Rh、Pd、Ag、Cd、In、Sn、Sb、Te、Ta、Ｗ、
Ir、Pt、Au、Tl、PbあるいはBiより選ばれるい
ずれか少なくとも１種の金属を主成分とすること
が好ましく、なかでもＷ、Mo、Ir、Si、Zrなど
は熱膨張率が炭化珪素のそれに比較的近く耐熱性
衝撃性に優れた接合層となすことができる。
前記接合層の軟化点は400℃以上であることが
有利である。その理由はチツプを基板に載置して
固定するダイボンデイング工程において一般的に
用いられる放熱性、耐熱性およびオーミツクコン
タクト性などに優れたAu―Si共晶合金法の作業
温度が400℃前後であること、また基板の気密封
止工程において広く用いられる電気 絶縁性およ
び金属、ガラス、セラミツクスなどとの濡れ性に
優れた低融点ガラス法の作業温度が400〜500℃で
あることから、前記接合層の軟化点が400℃以上
であれば前記炭化珪素質薄板とセラミツクス薄板
との接合性を劣化させることなくチツプを基板に
ダイボンデイングしたり、基板の気密封止を行な
うことができるからである。
前記接合層の厚さは少なくとも1μｍであるこ
とが好ましい。その理由は前記接合層の厚さが
1μｍより薄いと前記炭化珪素質薄板とセラミツ
クス薄板との接合強度を十分に得ることができ
ず、さらに炭化珪素質薄板とセラミツクス薄板と
の熱膨張差により生ずる応力を吸収・緩和する効
果が著しく小さく、セラミツクス薄板と炭化珪素
質薄板が剥離し易くなるからである。また前記接
合層の厚さは余り厚いと経済的でなく前記接合層
の厚さは３〜500μｍの範囲内が最も好適である。
従来、電気的絶縁性に優れ、かつ誘電率の低い
電子回路用基板として優れたセラミツクスとして
は例えばフオルステライト、ステアタイト、スピ
ネル、チタニア、アルミナ、ベリリア、ジルコ
ン、ムライト、シリマナイト、コージエライト、
リシア、サイアロン、窒化珪素、窒化ホウ素等が
あるが、本発明における前記セラミツクス薄板は
電気的絶縁性に優れ、かつ誘電率の低いセラミツ
クスであることの他に熱膨張率が炭化珪素質薄板
のそれになるべく近いものであることが有利であ
り、熱膨張係数が２×10-6〜７×10-6／℃の範囲
内であることが好ましい。その理由は熱膨張係数
が前記範囲内のセラミツクス薄板を炭化珪素質薄
板の表面に接合した積層構造を有する炭化珪素質
基板は温度サイクルあるいはサーマルシヨツクな
どによつて生ずる熱ストレスが著しく小さく、接
合性に極めて優れるからであり、３×10-6〜５×
10-6／℃の範囲内のセラミツクス薄板を使用する
場合に最も好適な結果を得ることができる。
ところで、上記電子回路用基板として優れたセ
ラミツクスおよび炭化珪素質薄板の熱膨張係数に
ついて比較すると、下記の第１表のようである。
The present invention relates to a method for manufacturing a silicon carbide substrate for electronic circuits used as a substrate for integrated circuits or as a material for IC packages, and in particular, the present invention relates to a method for producing a silicon carbide substrate for electronic circuits, which is used as a material for integrated circuit boards or IC packages. The present invention relates to a method of manufacturing a silicon carbide substrate for use. BACKGROUND OF THE INVENTION In recent years, with the progress of electronic industrial technology, electronic devices are becoming more densely packed or have higher speed calculation functions. As a result, the amount of heat generated within the integrated circuit increases, resulting in a problem that it becomes difficult to ensure the performance of the integrated circuit and maintain high reliability. Therefore, integrated circuit boards or
Electronic circuit boards used as materials for IC packages are required to have excellent heat dissipation properties in addition to properties such as electrical insulation, airtightness, and mechanical strength. By the way, various types of substrates for electronic circuits have been known and put into practical use, and for applications that require particularly high reliability, alumina sintered substrates (hereinafter referred to simply as alumina sintered substrates) are mainly used. (referred to as a substrate) is used. However, alumina substrates have low thermal conductivity and poor dissipation properties for heat generated within integrated circuits, making them extremely difficult to increase the density of electronic devices and increase the speed of calculation functions. Since the coefficient of thermal expansion of the substrate is significantly different from that of the silicon chips normally used for integrated circuits, it is difficult to bond silicon chips directly onto the substrate. In order to solve the above-mentioned problem in heat dissipation characteristics, substrates using beryllia, enamel, or the like have been considered. However, the former beryllia substrate has the disadvantage that it is difficult and expensive to manufacture and handle due to the toxicity of beryllia, while the latter enamel substrate has a high coefficient of thermal expansion because it is based on a metal plate. Further, the frit tends to form a dogbone structure, and furthermore, it is difficult to cut after printing, and cracks form in the enamel, making laser trimming impossible. In order to solve the above-mentioned drawbacks,
Publication No. 66086 discloses an invention related to "an electrically insulating base made of a sintered body containing silicon carbide as a main component and containing at least one of beryllium oxide and boron nitride." However, since this electrically insulating substrate is sintered by hot pressing, it is difficult and expensive to mass produce, and furthermore, when it contains beryllium oxide, there are problems due to the toxicity of beryllium. In addition, in order to apply silicon carbide sintered bodies as substrates for electronic circuits, the present inventors have conducted various studies on methods of imparting electrical insulation properties to silicon carbide sintered bodies, and have previously filed Japanese Patent Application No. 56-209991. ``Silicon carbide substrate having an insulating surface coating with excellent adhesion, mainly composed of eutectic oxide of aluminum oxide and silicon dioxide'' and its manufacturing method, Patent Application No. 56-209992, ``Silicon carbide substrate'' SiO 2 and P 2 O 5 , B 2 O 3 on the surface of
GeO2 , As2O3 , Sb2O3 , Bi2O3 , V2O3 , ZnO ,
PbO, Pb3O4 , PbO2 , CdO, Na2O , K2O ,
``Silicon carbide substrate having an insulating film mainly composed of an oxide formed by eutectic formation with at least one selected from Li 2 O, CaO, MgO, BaO, and SrO'', its manufacturing method, and patent application 57−48958
According to No. 1, "Insulation when the applied voltage is 25 V, characterized by having the following welding layer (a) on a silicon carbide substrate, and having the following welding layer (b) on the welding layer (a)" A silicon carbide substrate with a resistance value of 3×10 9 Ω or more. (A)
A welding layer whose main components are aluminum oxide and silicon dioxide. (b) Aluminum, silicon, phosphorus, boron,
Germanium, arsenic, antimony, bismuth, vanadium, zinc, cadmium, lead, sodium,
A welding layer whose main component is at least two oxides selected from potassium, lithium, calcium, magnesium, barium, and strontium. '' and its manufacturing method. By the way, in silicon carbide substrates that have been given electrical insulation by forming an oxide insulating film layer, silicon carbide has semiconductor-like properties and is more susceptible to the dielectric constant than an alumina substrate. Since the signal propagation speed becomes slow, it is required to increase the thickness of the oxide insulating film layer to reduce the capacitance. However, if the oxide insulating coating layer is too thick, defects such as cracks are likely to occur due to the difference in coefficient of thermal expansion between the coating layer and silicon carbide, and in some cases it may peel off. It was difficult to form an insulating coating layer. Further, electronic circuit boards are generally provided with lead pins for connection with other circuit components. Since a relatively large stress may be applied to the lead pin during handling, it is required to have a bonding strength that does not easily come off. However, since the stress is concentrated near the joint of the lead pin, when the lead pin is joined to the oxide insulating film layer as described above, it often breaks at the joint surface between the film layer and silicon carbide, and the bond strength is high. It was difficult to provide lead pins. The inventors of the present invention have repeatedly conducted various studies on the electrical insulation properties, electrostatic properties, and bondability of lead pins of the silicon carbide substrate, and as a result, we have created a laminated structure as shown in FIG. 1 by bonding a ceramic thin plate to a silicon carbide thin plate. The present inventors discovered that the above-mentioned drawbacks could be solved by using a ceramic with a specific volume resistivity of 10 6 Ωcm or more in Japanese Patent Application No. 57-197765. The thin plate
Al, Si, P, B, Ge, As, Sb, Bi, V, Zn,
Cd, Pb, Na, K, Li, Be, Ca, Mg, Ba, Sr
or at least one selected from Zr
The present invention proposes an invention relating to a "silicon carbide substrate for an electronic circuit, which is bonded to the surface of a silicon carbide thin plate by a bonding layer containing a seed oxide as a main component," and a method for manufacturing the same. According to the above explanation, by forming a laminated structure in which a ceramic thin plate is bonded to a silicon carbide thin plate, characteristics such as extremely stable electrical insulation, sufficiently low capacitance, and excellent bonding ability with lead pins can be achieved. A silicon carbide substrate can be obtained. The present invention further improves the invention previously proposed by the present inventors, and the silicon carbide thin plate and the ceramic thin plate are hard to be destroyed by thermal stress such as temperature cycles or thermal shocks, and are extremely dense and airtight. The purpose of the present invention is to provide a method for manufacturing a silicon carbide substrate that is extremely firmly bonded by a bonding layer with excellent properties.
Al, Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni,
Cu, Zn, Ge, Zr, Mo, Rh, Pd, Ag, Cd, In,
After applying a bonding agent composition containing at least one element selected from Sn, Sb, Te, Ta, W, Ir, Pt, Au, Tl, Pb, or Bi or a compound thereof as a main component, carbonization is performed. By stacking a silicon thin plate and a ceramic thin plate and heating them within a temperature range of 140 to 1700°C, Mg, Al, Si, Sc, Ti, V,
Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr,
Mo, Rh, Pd, Ag, Cd, In, Sn, Sb, Te,
An electronic device with excellent electrical insulation properties characterized by forming and bonding a bonding layer containing at least one metal selected from Ta, W, Ir, Pt, Au, Tl, Pb, or Bi as a main component. The above object can be achieved by a method of manufacturing a silicon carbide substrate for circuits. Next, the present invention will be explained in detail. The inventors of the present invention have conducted various studies to improve the bondability between a silicon carbide thin plate and a ceramic thin plate. As a result, the silicon carbide thin plate and the ceramic thin plate are bonded by a bonding layer containing at least one metal as a main component. ,
By forming a laminated structure as shown in Fig. 1, extremely strong bonding strength can be obtained even with a relatively small amount of bonding layer, and stress caused by the difference in thermal expansion between the silicon carbide thin plate and the ceramic thin plate can be reduced. We found that silicon carbide can be absorbed and relaxed, and obtained a silicon carbide substrate that has extremely excellent properties as a substrate for electronic circuits. The silicon carbide substrate obtained according to the manufacturing method of the present invention needs to have a laminated structure in which a ceramic thin plate having a specific volume resistivity of 10 6 Ωcm or more is bonded to the surface. The reason for this is that silicon carbide substrates, which have a laminated structure in which a ceramic thin plate with a volume resistivity of 10 6 Ωcm or more is bonded to the surface of a silicon carbide thin plate, are reliable even under high applied voltage conditions. This is because it has excellent electrical insulation, low capacitance, and excellent bondability with lead pins provided for connection with other circuit components. The reason why the ceramic thin plate needs to have a specific volume resistivity of 10 6 Ωcm or more is that electronic circuits are usually formed on the silicon carbide substrate by means such as printing, baking, or etching. However, the specific volume resistivity of the ceramic thin plate is 10 6 Ωcm.
If it is lower, electrical insulation cannot be maintained,
This is because a short circuit occurs in the circuit and the circuit function does not work properly.If higher reliability is required, it is advantageous to use a thin ceramic plate with a specific volume resistivity of 10 8 Ωcm or more. It is. The bonding layer needs to contain at least one metal as a main component. The reason is at least 1
By joining a silicon carbide thin plate and a ceramic thin plate with a bonding layer mainly composed of a certain metal, it is possible to not only obtain extremely strong bonding strength with a relatively small amount of bonding layer, but also to obtain a bonding layer mainly composed of the metal. The bonding layer, which is a component, has high toughness and plasticity, so it absorbs and alleviates the stress caused by the difference in thermal expansion between the silicon carbide thin plate and the ceramic thin plate, so it can withstand thermal stress such as temperature cycles or thermal shock. This is because it is possible to prevent breakage or peeling caused by this, and it is possible to obtain a silicon carbide substrate that is extremely dense and has excellent airtightness. The bonding layer is made of Mg, Al, Si, Sc, Ti, V, Cr,
Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr, Mo,
Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Ta, W,
It is preferable that the main component is at least one metal selected from Ir, Pt, Au, Tl, Pb, or Bi, and among them, W, Mo, Ir, Si, Zr, etc. have a coefficient of thermal expansion that is higher than that of silicon carbide. It is possible to form a bonding layer that is relatively close to this and has excellent heat resistance and impact resistance. Advantageously, the softening point of the bonding layer is 400°C or higher. The reason for this is that the working temperature of the Au-Si eutectic alloy method, which has excellent heat dissipation, heat resistance, and ohmic contact properties and is commonly used in the die bonding process in which chips are placed and fixed on a substrate, is around 400℃. In addition, the working temperature of the low melting point glass method, which is widely used in the hermetic sealing process of substrates and has excellent electrical insulation and wettability with metals, glass, ceramics, etc., is 400 to 500°C. If the softening point of the bonding layer is 400°C or higher, it is possible to die bond the chip to the substrate or hermetically seal the substrate without deteriorating the bonding properties between the silicon carbide thin plate and the ceramic thin plate. be. Preferably, the thickness of the bonding layer is at least 1 μm. The reason is that the thickness of the bonding layer is
If it is thinner than 1 μm, sufficient bonding strength between the silicon carbide thin plate and the ceramic thin plate cannot be obtained, and furthermore, the effect of absorbing and relieving stress caused by the difference in thermal expansion between the silicon carbide thin plate and the ceramic thin plate is extremely small. This is because the ceramic thin plate and the silicon carbide thin plate become easily separated. Moreover, if the thickness of the bonding layer is too thick, it is not economical, and the thickness of the bonding layer is most preferably within the range of 3 to 500 μm. Traditionally, ceramics that have excellent electrical insulation and low dielectric constant as substrates for electronic circuits include forsterite, steatite, spinel, titania, alumina, beryllia, zircon, mullite, sillimanite, cordierite,
There are ceramics such as silicon carbide, sialon, silicon nitride, boron nitride, etc., but the ceramic thin plate in the present invention is a ceramic with excellent electrical insulation and a low dielectric constant, and has a coefficient of thermal expansion that is equal to that of a silicon carbide thin plate. It is advantageous that the coefficient of thermal expansion is as close as possible, and it is preferable that the coefficient of thermal expansion is within the range of 2×10 −6 to 7×10 −6 /°C. The reason for this is that silicon carbide substrates with a laminated structure in which a ceramic thin plate with a coefficient of thermal expansion within the above range is bonded to the surface of a silicon carbide thin plate have extremely low thermal stress caused by temperature cycles or thermal shock, and have excellent bonding properties. This is because it is extremely excellent in 3×10 -6 to 5×
The most favorable results can be obtained when using ceramic sheets within the range of 10 -6 /°C. By the way, a comparison of the thermal expansion coefficients of ceramics and silicon carbide thin plates, which are excellent as substrates for electronic circuits, is as shown in Table 1 below.
【表】
上表からわかるように、ベリリア、ジルコン、
ムライト、シリマナイト、コージエライト、サイ
アロン、窒化珪素および窒化ホウ素の熱膨張係数
は炭化珪素のそれに近く、なかでもジルコン、ム
ライト、シリマナイトの熱膨張係数は炭化珪素質
薄板のそれによく近似している。
前記セラミツクス薄板は熱膨張率が炭化珪素質
薄板のそれになるべく近いものであることが重要
であり、ベリリア、ジルコン、ムライト、シリマ
ナイト、コージコライト、サイアロンあるいは窒
化珪素より選ばれるいずれか少なくとも１種を主
成分とするセラミツクスであることが好ましく、
なかでもジルコン、ムライト、シリマナイト、コ
ージエライトより選ばれるいずれか少なくとも１
種を主成分とするセラミツクスが最も好適であ
る。
前記セラミツクス薄板の厚さは少なくとも0.05
mmであることが好ましい。その理由はセラミツク
ス薄板の厚さは電子部品の小型化や軽量化を進め
たり、放熱特性を向上せしめる上でなるべく薄い
方が好ましいが、その厚さが0.05mmより薄いと印
加電圧が高い場合における電気的絶縁性が低下し
たり、静電容量が大きくなり、基板としての機能
性が劣化するからである。
前記セラミツクス薄板は基板上にチツプが載置
されるようチツプ載置用開口部を有するものであ
ることが好ましい。その理由はチツプ載置用開口
部を有するセラミツクス薄板が炭化珪素質薄板の
表面に接合された基板には、チツプがセラミツク
ス薄板を介することなく炭化珪素質薄板の表面に
直接接合されることからチツプで発生した熱は直
ちに炭化珪素質薄板に伝わるため優れた放熱特性
を示し、また炭化珪素質薄板とチツプの熱膨張率
がほぼ同じであることから温度サイクルあるいは
サーマルシヨツクなどによる熱ストレスがほとん
ど生じないためチツプが剥離したり、破損したり
することがなく極めて信頼性の高い接合を得るこ
とのできる利点を有するからである。
前記炭化珪素質薄板の厚さは0.1〜30mmの範囲
内であることが有利である。その理由は前記炭化
珪素質薄板の厚さは電子部品の小型化を進めた
り、放熱性を向上せしめる上でなるべく薄いこと
が好ましいが、その厚さが0.1mmより薄いと炭化
珪素質薄板自体の強度が弱く取扱い性に劣り、一
方30mmより厚いと電子部品の小型化が困難である
ばかりでなく基板に要する費用が高くなるため不
経済であるからである。
次に本発明の炭化珪素質基板の製造方法につい
て説明する。
本発明によれば、炭化珪素質薄板あるいはセラ
ミツクス薄板の少なくともいずれかにMg、Al、
Si、Sc、Ti、Ｖ、Cr、Mn、Fe、Co、Ni、Cu、
Zn、Ge、Zr、Mo、Rh、Pd、Ag、Cd、In、Sn、
Sb、Te、Ta、Ｗ、Ir、Pt、Au、Tl、Pbあるい
はBiより選ばれる元素あるいはそれらの化合物
のいずれか少なくとも１種を主成分とする接合剤
組成物を塗布した後、炭化珪素質薄板とセラミツ
クス薄板を重ねて140〜1700℃の温度範囲内に加
熱することにより、炭化珪素質薄板とセラミツク
ス薄板との間にMg、Al、Si、Sc、Ti、Ｖ、Cr、
Mn、Fe、Co、Ni、Cu、Zn、Ge、Zr、Mo、
Rh、Pd、Ag、Cd、In、Sn、Sb、Te、Ta、Ｗ、
Ir、Pt、Au、Tl、PbあるいはBiより選ばれるい
ずれか少なくとも１種の金属を主成分とする接合
層を形成せしめて接合させることによつて電気的
絶縁性に優れた電子回路用炭化珪素質基板が製造
される。
本発明によれば、前記炭化珪素質薄板とセラミ
ツクス薄板との間にMg、Al、Si、Sc、Ti、Ｖ、
Cr、Mn、Fe、Co、Ni、Cu、Zn、Ge、Zr、
Mo、Rh、Pd、Ag、Cd、In、Sn、Sb、Te、
Ta、Ｗ、Ir、Pt、Au、Tl、PbあるいはBiより
選ばれるいずれか少なくとも１種の金属を主成分
とする接合層を形成せしめて接合させることが必
要である。その理由は前記金属を主成分とする接
合層は小量で強力に炭化珪素質薄板とセラミツク
ス薄板とを接合することができ、しかも極めて優
れた気密性を有するばかりでなく接合時における
軟化温度あるいは流動性を適宜調整することがで
き作業性に優れるからである。前記金属のうち
Sn、Sb、Cu、Pb、Zn、Bi、Cd、In、Alなどは
軟化温度の低い取扱い性に優れた接合層を形成す
ることができ、Ag、Au、Ptなどを主成分とする
金属は耐酸化性に優れるため大気中で焼成するこ
とができる。
本発明によれば、炭化珪素質薄板あるいはセラ
ミツクス薄板の少なくともいずれかにMg、Al、
Si、Sc、Ti、Ｖ、Cr、Mn、Fe、Co、Ni、Cu、
Zn、Ge、Zr、Mo、Rh、Pd、Ag、Cd、In、Sn、
Sb、Te、Ta、Ｗ、Ir、Pt、Au、Tl、Pbあるい
はBiより選ばれる元素あるいはそれらの化合物
のいずれか少なくとも１種を主成分とする接合剤
組成物を塗布した後、炭化珪素質薄板とセラミツ
クス薄板を重ねて140〜1700℃の温度範囲内に加
熱することにより接合層が形成され炭化珪素質基
板が製造される。
本発明によれば、炭化珪素質薄板あるいはセラ
ミツクス薄板の少なくともいずれかに前記元素あ
るいはそれらの化合物のいずれか少なくとも１種
を主成分をとする接合剤組成物を塗布し140〜
1700℃の温度範囲内に加熱してあらかじめ接合層
を形成させた後、炭化珪素質薄板とセラミツクス
薄板を重ねて再度加熱することにより炭化珪素と
セラミツクス薄板を接合させて炭化珪素質基板を
製造することもできる。
本発明によれば、前記接合層は140〜1700℃の
温度範囲内で形成されることが必要である。その
理由は前記接合層は接合後の冷却時における炭化
珪素質薄板とセラミツクス薄板との熱膨張差によ
り生ずる応力を考慮するとなるべく低い温度で接
合層を形成して接合せしめることが望ましいが、
140℃より低い温度では炭化珪素質薄板とセラミ
ツクス薄板とを強固に接合させることが困難であ
るからであり、一方1700℃より高いと接合後の冷
却時における炭化珪素質薄板とセラミツクス薄板
との熱膨張差により生ずる応力の影響が顕著にな
るため炭化珪素質薄板とセラミツクス薄板とが冷
却時に剥離し易いばかりでなく、接合剤組成物中
に含有される酸化物によつて炭化珪素質薄板の表
面が酸化され、接合層と炭化珪素質薄板との間に
COガス等の気泡が生成して密着性を劣化させる
からである。
本発明によれば、前記接合層を形成せしめる際
の雰囲気としては通常非酸化性雰囲気が使用され
るが、前記接合層を形成するための接合剤組成物
として、接合層が形成される際に保護膜的な作用
効果を有する酸化物が混合されている接合剤組成
物を使用する場合、接合層が形成される際に接合
剤組成物の一部を酸化せしめて接合性を向上せし
める場合あるいは加熱温度がそれ程高くなく接合
層の酸化による影響が小さい場合には非酸化性雰
囲気以外の雰囲気例えば空気中雰囲気を使用する
こともできる。
本発明によれば、前記炭化珪素質薄板を酸化性
雰囲気中で加熱して表面を酸化せしめ酸化被膜層
を形成することが好ましい。その理由は、炭化珪
素質薄板を酸化性雰囲気中で加熱することによつ
て、炭化珪素質薄板の表面にSiC―酸化物の入り
組んだ遷移層を形成することができ、さらに前記
接合層との濡れ性が著しく改善され、接合層との
接合性に極めて優れるからである。
前記炭化珪素質薄板を酸化性雰囲気中で加熱し
て表面を酸化せしめ酸化被膜層を形成することに
よつて、炭化珪素質薄板と接合層との接合性が著
しく改善される機構は、炭化珪素薄板の表面に付
着している異物例えば遊離炭素等の不純物が除去
されることあるいは炭化珪素質薄板の表面が酸化
されることによつてミクロ的に粗化された状態と
なり、接合層との接合面積を著しく増大させるこ
とができ、しかも前記酸化被膜層と接合層に通常
含有される酸化物との濡れ性が極めて良好で、入
り組んだ遷移層を有する酸化被膜層と接合層中の
酸化物とが共融層を形成して強固に一体化するこ
とによるものと推察される。
本発明によれば、前記炭化珪素薄板の表面に形
成せしめる酸化被膜層としてさらに均一で緻密な
酸化被膜層が要求される場合には、あらかじめ炭
化珪素質薄板の表面にAl、Ｐ、Ｂ、Ge、As、
Sb、Bi、Ｖ、Zn、Cd、Pb、Na、Ｋ、Li、Be、
Ca、Mg、Ba、Srあるいはそれらの化合物のい
ずれか少なくとも１種を主成分とする組成物を塗
布した後、酸化性雰囲気中で加熱して酸化被膜層
を形成することが有利である。前述の如くして均
一で緻密な酸化被膜層を得ることができる機構
は、炭化珪素質薄板の表面に前記組成物を塗布す
ることによつて炭化珪素質薄板の表面に前記組成
物の酸化物を存在させた状態で炭化珪素質薄板の
表面を酸化せしめることができ、炭化珪素質薄板
の酸化によつて生成するSiO2のクリストバライ
ト化を防止することができることによるものと考
えられる。なおさらに均一で緻密な酸化被膜層が
要求されるような場合には前記SiO2のクリスト
バライト化を防止する効果が顕著なAl2O3を酸化
被膜層中に共融させることが有効であり、前記酸
化被膜層が形成される際の酸化性雰囲気中でAl
を酸化物の状態で供給できるAlあるいはその化
合物のいずれか少なくとも１種を含有する組成物
をAl2O3に換算して0.004〜2.9mg/cm2の割合で塗布
することが有利である。前記Alあるいはその化
合物としては種々の物質を使用することができる
が、なかでもアルミナゾルは極めて微細で反応性
の高いAl2O3を供給することができ最も好適に使
用することができる。
本発明によれば、前記酸化性雰囲気中における
加熱温度は好適には750〜1650℃の範囲内とする
ことが有利である。その理由は前記加熱温度が
750℃より低いと炭化珪素質薄板の酸化速度が遅
く効率的に酸化被膜層を形成せしめることが困難
であり、一方1650℃より高いと酸化速度が著しく
速く酸化被膜層を目的とする膜厚に制御すること
が困難であるばかりでなく炭化珪素の酸化の際に
生ずるCOガス等によつて前記酸化被膜層と炭化
珪素質薄板の間に気泡が生成するため密着性が劣
化するからであり、なかでも900〜1450℃の範囲
内で最もよい結果を得ることができる。
本発明によれば、前記酸化被膜層の膜厚は0.01
〜25μｍの範囲内とすることが有利である。その
理由は、前記膜厚が0.01μｍより薄いと遷移層の
形成が不充分になるばかりでなく、前記接合層と
の接合性をそれ程改善することができず、一方
25μｍより厚い酸化被膜層は形成せしめるのに極
めて長時間を要し、効率的でないからであり、な
かでも0.1〜10μｍの範囲内で最適な結果が得られ
る。
本発明によれば、前記接合層の厚さを少なくと
も1μｍとなすことが好ましい。その理由は、前
記接合層の厚さが1μｍより薄いと前記炭化珪素
質薄板とセラミツクス薄板との接合強度を十分に
得ることができないばかりでなく、接合後の冷却
時における炭化珪素質薄板とセラミツクス薄板の
収縮差により生ずる応力を吸収・緩和する効果が
著しく小さく、セラミツクス薄板と炭化珪素質薄
板が剥離し易いからである。また前記接合層の厚
さを余り厚くすることは経済的でないため前記接
合層の厚さは３〜500μｍの範囲内とすることに
より最も好適な結果が得られる。
本発明によれば、前記セラミツクス薄板は電気
的絶縁性に優れ、かつ誘電率の低いセラミツクス
であることの他に熱膨張率が炭化珪素質薄板のそ
れになるべく近いものを使用することが有利であ
り、熱膨張係数が２×10-6〜７×10-6／℃の範囲
内のセラミツクス薄板を使用することが好まし
い。その理由は熱膨張係数が前記範囲内のセラミ
ツクス薄板は炭化珪素質薄板の表面に接合した後
の冷却時における炭化珪素質薄板とセラミツクス
薄板の収縮差により生ずる熱ストレスが小さく、
接合性に極めて優れるからであり、３×10-6〜５
×10-6／℃の範囲内のセラミツクス薄板を使用す
る場合に最も好適な結果を得ることができる。
本発明によれば、前記セラミツクス薄板は先に
も記載した如くベリリア、ジルコニア、ムライ
ト、シリマナイト、コージエライト、サイアロン
あるいは窒化珪素より選ばれるいずれか少なくと
も１種を主成分とするセラミツクスを使用するこ
とが好ましく、なかでもジルコニア、ムライト、
シリマナイト、コージエライトより選ばれるいず
れか少なくとも１種を主成分とするセラミツクス
を使用することが最も好適である。なお特に窒化
珪素を主成分とするセラミツクス薄板を使用する
に際しては、あらかじめ表面を酸化処理して酸化
被膜層を形成させてから使用することが有利であ
る。
本発明によれば、前記セラミツクス薄板の厚さ
は少なくとも0.05mmであることが好ましい。その
理由は、セラミツクス薄板の厚さは電子部品の小
型化や軽量化を進めたり、放熱特性を向上せしめ
る上でなるべく薄い方が好ましいがその厚さが
0.05mmより薄いと、印加電圧が高い場合における
電気的絶縁性が低下したり、静電容量が大きくな
り、基板としての機能性が劣化するからである。
本発明によれば、基板上にチツプが載置される
ようチツプ載置用開口部を有するセラミツクス薄
板を炭化珪素質薄板の表面に接合することが好ま
しいが、前記チツプ載置用開口部を有するセラミ
ツクス薄板は例えばグリーンシートを打抜きなど
で生加工した後焼成する方法、チツプ載置用開口
部を有する生成形体を直接成形することのできる
押し型で成形した後焼成する方法あるいは一旦焼
成された薄板を超音波加工法などにより加工する
方法によつて製造することができる。
なお、本発明によれば、さらに高密度化するこ
とを目的として前記セラミツクス薄板の上にさら
に接合層を介してセラミツクス薄板を２枚以上積
層した構造とすることもできる。
次に本発明を実施例について説明する。
実施例 １
炭化珪素薄板はホウ素を1.0重量％、遊離炭素
を2.0重量％含有し、3.1ｇ/cm3の密度を有する炭
化珪素無加圧焼結体であつて、30×30×２mmの薄
板状のものをあらかじめポリツシング加工し、最
終的に＃1200砥石で表面仕上げをし、次いでアセ
トン中で煮沸して脱脂処理したものを使用した。
塩化カルシウム1.6ｇをアルミナゾル１重量％
水溶液100mlに溶解させた溶液中に前記炭化珪素
質薄板を浸漬した後、乾燥器中に装入し110℃で
１時間乾燥した。前記炭化珪素質薄板の表面には
Al2O3に換算して約0.04mg/cm2のアルミナゾルと
CaOに換算して約0.07mg/cm2の塩化カルシウムが
存在していた。
次いで、前記炭化珪素質薄板を内径が70mmの管
状炉に装入し酸化処理を行なつた。前記酸化処理
は酸素ガスを３/minの割合で前記管状炉中へ
装入し1400℃で１時間加熱することにより行なつ
た。
得られた酸化被膜層は透明なガラス状で、その
膜厚は約0.9μｍで平滑な表面性状を有していた。
なお、この酸化被膜層のAl2O3／SiO2モル比は
0.30であつた。
さらに、前記酸化被膜層上および30×30×１mm
の薄板状で第２図に示した如きチツプ載置用開口
部を有するムライト薄板上にSiO2とAl2O3とPbO
を主成分とするガラスとNi粉末（Ni＝99.9重量
％）とが重量比で14：86に配合された接合剤組成
物をスクリーン印刷法によつて互いに接合される
側の面に塗布し、120℃で20分間乾燥した。
前記炭化珪素質薄板とムライト薄板を重ねて、
焼成炉に装入し空気雰囲気中で10℃/minで昇温
し、最高900℃で10分間保持した後室温まで徐冷
し、第１図に示した如き積層構造を有する炭化珪
素質基板を得た。
得られた炭化珪素質基板の接合層の厚さは約
60μｍであり、ピンホール等の欠陥も殆ど観察さ
れず、前記炭化珪素質薄板とムライト薄板は極め
て強固に密着していた。
前記炭化珪素質基板のムライト薄板が接合され
た箇所における絶縁抵抗は印加電圧が100の場
合1014Ω以上、耐電圧は13K、静電容量は
1.0PFであつた。なお、前記絶縁抵抗はJIS―Ｃ
―5012の7.3に、耐電圧はJIS―Ｃ―2110の8.3に
基づいて測定し、静電容量は第３図に示す如く、
銀ペーストを用いてムライト薄板上に測定用の電
極を印刷し、1MHZの周波数における両電極間の
静電容量を測定した。
実施例 ２
実施例１と同様にして表面仕上げおよび脱脂処
理を施した炭化珪素質薄板を実施例１で使用した
管状炉中に装入し、実施例１と同様の条件で酸化
処理した。前記処理によつて炭化珪素質薄板の表
面に厚さ約0.05μｍのSiO2被膜よりなる酸化被膜
層を得た。
次いで、実施例１と同様にして炭化珪素質薄板
とムライト薄板を接合した。
得られた炭化珪素質基板の特性は実施例１と同
様の方法で測定し第２表に示した。[Table] As you can see from the table above, beryllia, zircon,
The thermal expansion coefficients of mullite, sillimanite, cordierite, sialon, silicon nitride, and boron nitride are close to that of silicon carbide, and among them, the thermal expansion coefficients of zircon, mullite, and sillimanite closely approximate that of a silicon carbide thin plate. It is important that the ceramic thin plate has a coefficient of thermal expansion as close as possible to that of a silicon carbide thin plate, and at least one selected from beryllia, zircon, mullite, sillimanite, cordicolite, sialon, or silicon nitride is used. Preferably, the main component is ceramics,
Among them, at least one selected from zircon, mullite, sillimanite, and cordierite.
Ceramics containing seeds as a main component are most preferred. The thickness of the ceramic sheet is at least 0.05
Preferably, it is mm. The reason for this is that it is preferable that the thickness of the ceramic thin plate be as thin as possible in order to promote miniaturization and weight reduction of electronic components and to improve heat dissipation characteristics, but if the thickness is thinner than 0.05 mm, the This is because the electrical insulation property decreases, the capacitance increases, and the functionality as a substrate deteriorates. Preferably, the thin ceramic plate has an opening for placing a chip on the substrate. The reason for this is that on a substrate in which a ceramic thin plate having an opening for placing chips is bonded to the surface of a silicon carbide thin plate, the chips are bonded directly to the surface of the silicon carbide thin plate without using the ceramic thin plate. The heat generated by the chip is immediately transferred to the silicon carbide thin plate, which exhibits excellent heat dissipation properties.Also, since the thermal expansion coefficients of the silicon carbide thin plate and the chip are almost the same, thermal stress caused by temperature cycles or thermal shocks is almost non-existent. This is because the chip has the advantage of being able to obtain extremely reliable bonding without peeling or damaging the chip. Advantageously, the thickness of the silicon carbide thin plate is in the range of 0.1 to 30 mm. The reason for this is that the thickness of the silicon carbide thin plate is preferably as thin as possible in order to promote miniaturization of electronic components and improve heat dissipation, but if the thickness is thinner than 0.1 mm, the thickness of the silicon carbide thin plate itself is This is because it has low strength and poor handling properties, and on the other hand, if it is thicker than 30 mm, it is not only difficult to miniaturize electronic components but also uneconomical because the cost of the board increases. Next, a method for manufacturing a silicon carbide substrate of the present invention will be explained. According to the present invention, Mg, Al,
Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu,
Zn, Ge, Zr, Mo, Rh, Pd, Ag, Cd, In, Sn,
After applying a bonding agent composition containing at least one element selected from Sb, Te, Ta, W, Ir, Pt, Au, Tl, Pb or Bi or a compound thereof as a main component, silicon carbide By stacking the thin plate and the ceramic thin plate and heating them within a temperature range of 140 to 1700°C, Mg, Al, Si, Sc, Ti, V, Cr, etc. are formed between the silicon carbide thin plate and the ceramic thin plate.
Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr, Mo,
Rh, Pd, Ag, Cd, In, Sn, Sb, Te, Ta, W,
Silicon carbide for electronic circuits that has excellent electrical insulation properties by forming and bonding a bonding layer mainly composed of at least one metal selected from Ir, Pt, Au, Tl, Pb, or Bi. A quality substrate is manufactured. According to the present invention, between the silicon carbide thin plate and the ceramic thin plate, Mg, Al, Si, Sc, Ti, V,
Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr,
Mo, Rh, Pd, Ag, Cd, In, Sn, Sb, Te,
It is necessary to form and bond a bonding layer containing at least one metal selected from Ta, W, Ir, Pt, Au, Tl, Pb, or Bi as a main component. The reason for this is that the metal-based bonding layer can strongly bond a silicon carbide thin plate and a ceramic thin plate in a small amount, and not only has extremely excellent airtightness but also has low softening temperature during bonding. This is because fluidity can be adjusted appropriately and workability is excellent. Of the above metals
Sn, Sb, Cu, Pb, Zn, Bi, Cd, In, Al, etc. can form a bonding layer with a low softening temperature and excellent handling properties, while metals mainly composed of Ag, Au, Pt, etc. Because it has excellent oxidation resistance, it can be fired in the atmosphere. According to the present invention, Mg, Al,
Si, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu,
Zn, Ge, Zr, Mo, Rh, Pd, Ag, Cd, In, Sn,
After applying a bonding agent composition containing at least one element selected from Sb, Te, Ta, W, Ir, Pt, Au, Tl, Pb or Bi or a compound thereof as a main component, silicon carbide A bonding layer is formed by stacking a thin plate and a ceramic thin plate and heating them within a temperature range of 140 to 1700°C, and a silicon carbide substrate is manufactured. According to the present invention, a bonding agent composition containing at least one of the above elements or compounds thereof as a main component is applied to at least one of a silicon carbide thin plate and a ceramic thin plate.
After forming a bonding layer in advance by heating within a temperature range of 1700°C, the silicon carbide thin plate and the ceramic thin plate are stacked and heated again to bond the silicon carbide and ceramic thin plate to produce a silicon carbide substrate. You can also do that. According to the present invention, the bonding layer needs to be formed within a temperature range of 140 to 1700°C. The reason for this is that, considering the stress caused by the difference in thermal expansion between the silicon carbide thin plate and the ceramic thin plate during cooling after bonding, it is desirable to form the bonding layer at as low a temperature as possible for bonding.
This is because if the temperature is lower than 140°C, it is difficult to firmly bond the silicon carbide thin plate and the ceramic thin plate, whereas if it is higher than 1700°C, the heat generated between the silicon carbide thin plate and the ceramic thin plate during cooling after bonding will increase. Because the influence of stress caused by the difference in expansion becomes significant, not only does the silicon carbide thin plate and the ceramic thin plate easily separate when cooled, but the surface of the silicon carbide thin plate is also affected by the oxides contained in the bonding agent composition. is oxidized, forming a bond between the bonding layer and the silicon carbide thin plate.
This is because bubbles such as CO gas are generated and the adhesion deteriorates. According to the present invention, although a non-oxidizing atmosphere is normally used as the atmosphere when forming the bonding layer, the bonding agent composition for forming the bonding layer is When using a bonding agent composition containing an oxide that acts as a protective film, when forming a bonding layer, part of the bonding agent composition is oxidized to improve bonding properties, or If the heating temperature is not so high that the effect of oxidation on the bonding layer is small, an atmosphere other than a non-oxidizing atmosphere, for example, an air atmosphere may be used. According to the present invention, it is preferable that the silicon carbide thin plate is heated in an oxidizing atmosphere to oxidize the surface and form an oxide film layer. The reason for this is that by heating the silicon carbide thin plate in an oxidizing atmosphere, an intricate transition layer of SiC-oxide can be formed on the surface of the silicon carbide thin plate, and furthermore, an intricate transition layer of SiC-oxide can be formed on the surface of the silicon carbide thin plate. This is because the wettability is significantly improved and the bondability with the bonding layer is extremely excellent. The mechanism by which the bondability between the silicon carbide thin plate and the bonding layer is significantly improved by heating the silicon carbide thin plate in an oxidizing atmosphere to oxidize the surface and form an oxide film layer is that The removal of foreign substances such as free carbon and other impurities adhering to the surface of the thin plate, or the oxidation of the surface of the silicon carbide thin plate, results in a microscopically roughened state, which prevents bonding with the bonding layer. The area can be significantly increased, and the wettability between the oxide film layer and the oxide normally contained in the bonding layer is extremely good, and the oxide film layer and the oxide in the bonding layer have an intricate transition layer. This is presumed to be due to the formation of a eutectic layer and strong integration. According to the present invention, when a more uniform and dense oxide layer is required as the oxide layer to be formed on the surface of the silicon carbide thin plate, Al, P, B, Ge, etc. ,As,
Sb, Bi, V, Zn, Cd, Pb, Na, K, Li, Be,
It is advantageous to apply a composition containing at least one of Ca, Mg, Ba, Sr, or a compound thereof as a main component and then heat it in an oxidizing atmosphere to form an oxide film layer. The mechanism by which a uniform and dense oxide film layer can be obtained as described above is that the oxide of the composition is applied to the surface of the silicon carbide thin plate by applying the composition to the surface of the silicon carbide thin plate. This is thought to be due to the fact that the surface of the silicon carbide thin plate can be oxidized in the presence of the silicon carbide thin plate, and it is possible to prevent SiO 2 generated by the oxidation of the silicon carbide thin plate from converting into cristobalite. Furthermore, in cases where a more uniform and dense oxide film layer is required, it is effective to eutectic Al 2 O 3 into the oxide film layer, which has a remarkable effect of preventing the SiO 2 from turning into cristobalite. Al in the oxidizing atmosphere when the oxide film layer is formed
It is advantageous to apply a composition containing at least one of Al or its compounds capable of supplying Al in the form of an oxide at a rate of 0.004 to 2.9 mg/cm 2 in terms of Al 2 O 3 . Various substances can be used as the Al or its compound, but among them, alumina sol can be used most preferably because it can supply extremely fine and highly reactive Al 2 O 3 . According to the invention, it is advantageous that the heating temperature in the oxidizing atmosphere is preferably within the range of 750 to 1650°C. The reason is that the heating temperature is
If it is lower than 750℃, the oxidation rate of the silicon carbide thin plate is slow and it is difficult to form an oxide layer efficiently.On the other hand, if it is higher than 1650℃, the oxidation rate is extremely fast and it is difficult to form an oxide layer to the desired thickness. This is because not only is it difficult to control, but also air bubbles are generated between the oxide film layer and the silicon carbide thin plate due to CO gas generated during oxidation of silicon carbide, which deteriorates the adhesion. Among these, the best results can be obtained within the range of 900 to 1450°C. According to the present invention, the thickness of the oxide film layer is 0.01
Advantageously, it is in the range ˜25 μm. The reason for this is that if the film thickness is thinner than 0.01 μm, not only will the formation of the transition layer be insufficient, but also the bonding property with the bonding layer cannot be improved that much.
This is because an oxide layer thicker than 25 .mu.m takes a very long time to form and is not efficient; optimum results are obtained within the range of 0.1 to 10 .mu.m. According to the invention, the thickness of the bonding layer is preferably at least 1 μm. The reason for this is that if the thickness of the bonding layer is thinner than 1 μm, not only will it not be possible to obtain sufficient bonding strength between the silicon carbide thin plate and the ceramic thin plate, but also the silicon carbide thin plate and ceramic thin plate will not bond properly when cooled after bonding. This is because the effect of absorbing and relaxing the stress caused by the difference in shrinkage of the thin plates is extremely small, and the ceramic thin plate and the silicon carbide thin plate are likely to separate. Further, since it is not economical to make the thickness of the bonding layer too thick, the most preferable results can be obtained by setting the thickness of the bonding layer within the range of 3 to 500 μm. According to the present invention, it is advantageous to use a ceramic thin plate having excellent electrical insulation properties and a low dielectric constant, and also having a coefficient of thermal expansion as close as possible to that of a silicon carbide thin plate. It is preferable to use a ceramic thin plate having a coefficient of thermal expansion in the range of 2×10 -6 to 7×10 -6 /°C. The reason for this is that a ceramic thin plate with a coefficient of thermal expansion within the above range has less thermal stress caused by the difference in shrinkage between the silicon carbide thin plate and the ceramic thin plate during cooling after being bonded to the surface of the silicon carbide thin plate.
This is because it has extremely excellent bonding properties, 3 × 10 -6 ~ 5
The most favorable results can be obtained when using ceramic sheets within the range of ×10 -6 /°C. According to the present invention, as described above, it is preferable to use a ceramic thin plate containing at least one selected from beryllia, zirconia, mullite, sillimanite, cordierite, sialon, and silicon nitride as a main component. , especially zirconia, mullite,
It is most preferable to use ceramics whose main component is at least one selected from sillimanite and cordierite. In particular, when using a ceramic thin plate containing silicon nitride as a main component, it is advantageous to oxidize the surface in advance to form an oxide film layer. According to the invention, the thickness of said ceramic sheet is preferably at least 0.05 mm. The reason for this is that the thickness of ceramic thin plates is preferably as thin as possible in order to make electronic components smaller and lighter, and to improve heat dissipation characteristics.
This is because if it is thinner than 0.05 mm, the electrical insulation will be lowered when the applied voltage is high, the capacitance will be increased, and the functionality as a substrate will be deteriorated. According to the present invention, it is preferable that a thin ceramic plate having an opening for chip placement is bonded to the surface of the silicon carbide thin plate so that the chip is placed on the substrate. Ceramics thin plates can be produced, for example, by blanking a green sheet and then firing it, by molding it with a press mold that can directly form a green body with openings for placing chips, and then firing it, or by firing it after it has been fired. It can be manufactured by a method of processing using an ultrasonic processing method or the like. According to the present invention, for the purpose of further increasing the density, it is also possible to have a structure in which two or more ceramic thin plates are laminated on top of the ceramic thin plate with a bonding layer interposed therebetween. Next, the present invention will be explained with reference to examples. Example 1 A silicon carbide thin plate is a pressureless sintered body of silicon carbide containing 1.0% by weight of boron and 2.0% by weight of free carbon, and has a density of 3.1 g/cm 3 , and is a thin plate of 30 x 30 x 2 mm. The material used had been polished in advance, finished with a surface finish using a #1200 grindstone, and then degreased by boiling in acetone. Calcium chloride 1.6g alumina sol 1% by weight
The silicon carbide thin plate was immersed in a solution dissolved in 100 ml of an aqueous solution, then placed in a dryer and dried at 110°C for 1 hour. On the surface of the silicon carbide thin plate,
About 0.04 mg/cm 2 of alumina sol in terms of Al 2 O 3
Approximately 0.07 mg/cm 2 of calcium chloride was present in terms of CaO. Next, the silicon carbide thin plate was placed in a tube furnace having an inner diameter of 70 mm and subjected to oxidation treatment. The oxidation treatment was carried out by charging oxygen gas into the tube furnace at a rate of 3/min and heating at 1400° C. for 1 hour. The obtained oxide film layer was transparent and glassy, had a thickness of about 0.9 μm, and had a smooth surface.
The Al 2 O 3 /SiO 2 molar ratio of this oxide film layer is
It was 0.30. Furthermore, on the oxide film layer and 30×30×1 mm
SiO 2 , Al 2 O 3 and PbO were deposited on a thin mullite plate having an opening for placing chips as shown in Figure 2.
A bonding agent composition containing glass whose main components are glass and Ni powder (Ni = 99.9% by weight) in a weight ratio of 14:86 is applied to the surfaces to be bonded to each other by screen printing, It was dried at 120°C for 20 minutes. Layering the silicon carbide thin plate and the mullite thin plate,
The silicon carbide substrate was charged into a firing furnace and heated at a rate of 10°C/min in an air atmosphere, held at a maximum of 900°C for 10 minutes, and then slowly cooled to room temperature to form a silicon carbide substrate with a laminated structure as shown in Figure 1. Obtained. The thickness of the bonding layer of the obtained silicon carbide substrate is approximately
60 μm, almost no defects such as pinholes were observed, and the silicon carbide thin plate and mullite thin plate were in extremely strong contact. The insulation resistance at the point where the mullite thin plate of the silicon carbide substrate is bonded is 10 14 Ω or more when the applied voltage is 100 Ω, the withstand voltage is 13 K, and the capacitance is
It was 1.0PF. In addition, the above insulation resistance is JIS-C
-5012, 7.3, withstand voltage is measured based on JIS-C-2110, 8.3, and capacitance is as shown in Figure 3.
Electrodes for measurement were printed on a thin mullite plate using silver paste, and the capacitance between the two electrodes at a frequency of 1 MHZ was measured. Example 2 A thin silicon carbide plate that had been surface-finished and degreased in the same manner as in Example 1 was charged into the tubular furnace used in Example 1, and oxidized under the same conditions as in Example 1. By the above treatment, an oxide film layer consisting of a SiO 2 film with a thickness of about 0.05 μm was obtained on the surface of the silicon carbide thin plate. Next, in the same manner as in Example 1, the silicon carbide thin plate and the mullite thin plate were joined. The properties of the obtained silicon carbide substrate were measured in the same manner as in Example 1 and are shown in Table 2.
【表】
実施例 ３
実施例１と同様にして酸化被膜層を形成させた
炭化珪素質薄板と、第２表に示した如き厚さの異
なるムライト薄板のそれぞれの表面に接合剤組成
物としてSiO2とAl2O3とB2O3を主成分とするガ
ラスとCu粉末（Cu＝99.9重量％）とが重量比で
７：93に配合された接合剤組成物をスクリーン印
刷法によつて塗布し、110℃で30分間乾燥した。
前記炭化珪素質薄板とムライト薄板とを重ね
て、焼成炉に装入し空気雰気中で20℃/minで昇
温し、最高950℃で10分間保持した後室温まで徐
冷して接合した。
得られた炭化珪素質基板の特性は実施例１と同
様の方法で測定し第２表に示した。
実施例 ４
実施例１と同様であるが、Mo粉末とSiO2が重
量比で92：８に配合された組成物を、主成分とす
る接合剤組成物をスクリーン印刷法によつて塗布
し、110℃で30分間乾燥した。
前記炭化珪素質薄板と前記ムライト薄板をそれ
ぞれ焼成炉に装入し水素還元雰囲気中で1400℃で
30分間加熱してメタライズ層を形成した。次に炭
化珪素質薄板のメタライズ層表面にAgとCuが重
量比で72：28の板状のロウ組成物を置き、さらに
その上に前記ムライト薄板を重ねて焼成炉に装入
し水素還元雰囲気中で850℃で10分間保持した後
室温まで徐冷して炭化珪素質基板を得た。
得られた炭化珪素質基板の特性は実施例１と同
様の方法で測定し、第２表に示した。
実施例 ５
実施例１と同様にして酸化被膜層を形成させた
炭化珪素質薄板上にSiO2とAl2O3とPbOとB2O3
を主成分とするガラスとAgとPdを主成分とする
金属粉末とが重量比で87：13に配合された接合剤
組成物をスクリーン印刷法によつて塗布し、この
上にシリマナイト薄板を重ねて80℃で２時間乾燥
した。
前記炭化珪素質薄板とシリマナイト薄板を焼成
炉に装入し空気雰囲気中で10℃/minで昇温し、
最高温度930℃で10分間保持した後室温まで徐冷
して炭化珪素質基板を得た。
得られた炭化珪素質基板の特性は実施例１と同
様の方法で測定し、第２表に示した。
実施例 ６
実施例５とほぼ同様であるが、セラミツクス薄
板としてコージエライト薄板を使用し、酸化被膜
層を形成した炭化珪素質薄板とコージエライト薄
板のそれぞれに前記実施例５で用いた接合剤組成
物を塗布し乾燥した後、実施例５と同様の条件で
加熱してメタライズ層を形成した。次に炭化珪素
質薄板のメタライズ層表面にPbとSnが重量比で
95：５の割合で配合されたペースト状のハンダを
塗布し、この上に前記コージエライト薄板を重ね
て空気雰囲気中で360℃まで加熱した後冷却し炭
化珪素質基板を得た。
得られた炭化珪素質基板の特性は実施例１と同
様の方法で測定し第２表に示した。
実施例 ７
実施例１と同様にして酸化被膜層を形成させた
炭化珪素質薄板の酸化被膜層上にSiO2とAl2O3と
PbOを主成分とするガラスとNi粉末（Ni＝9.99
重量％）とが重量比で11：89に配合された接合剤
組成物を塗布し、この上にセラミツクス薄板とし
て表面に厚さ0.06μｍのSiO2被膜を形成した窒化
珪素薄板を重ねた後乾燥した。
次いで、前記炭化珪素質薄板と窒化珪素薄板を
焼成炉に装入して窒素雰気中で10℃/minで昇温
し、最高870℃で10分間保持した後室温まで徐冷
して炭化珪素質基板を得た。
得られた炭化珪素質基板の特性は実施例１と同
様の方法で測定し、第２表に示した。
実施例 ８
実施例１と同様であるが、Ni粉末に換えてFe、
Co、Ti、Crの粉末をそれぞれ使用して炭化珪素
質基板を製造した。
得られた炭化珪素質基板はいずれも炭化珪素質
薄板とムライト薄板とが強固に接合されており、
電気的特性も極めて良好であつた。
実施例 ９
実施例４と同様であるが、Mo粉末に換えて
Ta、Ｗ、Irの粉末をそれぞれ使用して炭化珪素
質基板を製造した。
得られた炭化珪素質基板はいずれも炭化珪素質
薄板とムライト薄板との接合性に優れており、電
気的特性も極めて良好であつた。
実施例 10
実施例５と同様であるが、AgとPdを主成分と
する金属粉末、AuとPtを主成分とする金属粉末
をそれぞれ使用して炭化珪素質基板を製造した。
得られた炭化珪素質基板はいずれも炭化珪素質
薄板とシリマナイト薄板とが強固に接合されてお
り、電気的特性も良好であつた。
実施例 11
実施例６と同様であるが、PbとSnよりなるハ
ンダに換えてCu―Zn合金、Zn―Al合金、Pb―
Sn―Sb合金、Bi―Cd合金のペースト状組成物を
それぞれ使用して炭化珪素質基板を得た。なお加
熱温度はそれぞれの合金の融点に応じて変化させ
た。
得られた炭化珪素質基板はいずれも炭化珪素質
薄板とコージエライト薄板との接合性が良好で、
電気的特性にも優れていた。
以上述べた如く、本発明によれば、熱膨張率が
シリコンチツプとほぼ同じで、前記シリコンチツ
プを直接接合することができ、かつ放熱特性に優
れた炭化珪素質薄板を集積回路用基板あるいは
ICパツケージ用材料として極めて有利に適用で
き、しかも静電容量が著しく小さく極めて高い回
路機能を発揮することのできる炭化珪素質基板を
供給できるので、産業上に寄与する効果は極めて
大きい。[Table] Example 3 A silicon carbide thin plate on which an oxide film layer was formed in the same manner as in Example 1, and a mullite thin plate with different thicknesses as shown in Table 2 were coated with SiO as a bonding agent composition on their respective surfaces. 2 , Al 2 O 3 and B 2 O 3 as main components, and Cu powder (Cu = 99.9% by weight) in a weight ratio of 7:93. It was applied and dried at 110°C for 30 minutes. The silicon carbide thin plate and the mullite thin plate were stacked and charged into a firing furnace, heated at a rate of 20°C/min in an air atmosphere, held at a maximum of 950°C for 10 minutes, and then slowly cooled to room temperature to join them. . The properties of the obtained silicon carbide substrate were measured in the same manner as in Example 1 and are shown in Table 2. Example 4 Same as Example 1, but a bonding agent composition containing a composition containing Mo powder and SiO 2 in a weight ratio of 92:8 as the main component was applied by screen printing, It was dried at 110°C for 30 minutes. The silicon carbide thin plate and the mullite thin plate were charged into a firing furnace and heated at 1400°C in a hydrogen reducing atmosphere.
A metallized layer was formed by heating for 30 minutes. Next, a plate-shaped wax composition with a weight ratio of Ag and Cu of 72:28 is placed on the surface of the metallized layer of the silicon carbide thin plate, and the mullite thin plate is layered on top of this and charged into a firing furnace in a hydrogen-reducing atmosphere. After being held at 850°C for 10 minutes in a vacuum chamber, the mixture was slowly cooled to room temperature to obtain a silicon carbide substrate. The properties of the obtained silicon carbide substrate were measured in the same manner as in Example 1 and are shown in Table 2. Example 5 SiO 2 , Al 2 O 3 , PbO and B 2 O 3 were deposited on a silicon carbide thin plate on which an oxide layer was formed in the same manner as in Example 1.
A bonding agent composition containing glass whose main components are glass and metal powder whose main components are Ag and Pd in a weight ratio of 87:13 is applied by screen printing, and a thin sillimanite plate is layered on top of this. and dried at 80°C for 2 hours. The silicon carbide thin plate and sillimanite thin plate were charged into a firing furnace and heated at a rate of 10°C/min in an air atmosphere.
The maximum temperature was held at 930° C. for 10 minutes and then gradually cooled to room temperature to obtain a silicon carbide substrate. The properties of the obtained silicon carbide substrate were measured in the same manner as in Example 1 and are shown in Table 2. Example 6 Almost the same as Example 5, except that a cordierite thin plate was used as the ceramic thin plate, and the bonding agent composition used in Example 5 was applied to each of the silicon carbide thin plate on which an oxide film layer was formed and the cordierite thin plate. After coating and drying, heating was performed under the same conditions as in Example 5 to form a metallized layer. Next, Pb and Sn are added to the surface of the metallized layer of the silicon carbide thin plate in a weight ratio.
A paste-like solder mixed in a ratio of 95:5 was applied, and the cordierite thin plate was placed thereon, heated to 360° C. in an air atmosphere, and then cooled to obtain a silicon carbide substrate. The properties of the obtained silicon carbide substrate were measured in the same manner as in Example 1 and are shown in Table 2. Example 7 SiO 2 and Al 2 O 3 were deposited on the oxide film layer of a silicon carbide thin plate on which the oxide film layer was formed in the same manner as in Example 1.
Glass mainly composed of PbO and Ni powder (Ni = 9.99
A bonding agent composition with a weight ratio of 11:89 (% by weight) was applied, and a silicon nitride thin plate with a 0.06 μm thick SiO 2 film formed on the surface was layered on top of this as a ceramic thin plate, and then dried. did. Next, the silicon carbide thin plate and the silicon nitride thin plate are charged into a firing furnace, heated at a rate of 10°C/min in a nitrogen atmosphere, held at a maximum of 870°C for 10 minutes, and then slowly cooled to room temperature to form silicon carbide. A quality substrate was obtained. The properties of the obtained silicon carbide substrate were measured in the same manner as in Example 1 and are shown in Table 2. Example 8 Same as Example 1, but instead of Ni powder, Fe,
Silicon carbide substrates were manufactured using Co, Ti, and Cr powders. In each of the obtained silicon carbide substrates, a silicon carbide thin plate and a mullite thin plate are firmly bonded.
The electrical characteristics were also extremely good. Example 9 Same as Example 4, but instead of Mo powder
Silicon carbide substrates were manufactured using powders of Ta, W, and Ir. All of the silicon carbide substrates obtained had excellent bonding properties between the silicon carbide thin plate and the mullite thin plate, and had extremely good electrical properties. Example 10 A silicon carbide substrate was produced in the same manner as in Example 5, except that a metal powder containing Ag and Pd as main components and a metal powder containing Au and Pt as main components were used, respectively. In each of the silicon carbide substrates obtained, the silicon carbide thin plate and the sillimanite thin plate were firmly bonded, and the electrical properties were also good. Example 11 Same as Example 6, but instead of solder made of Pb and Sn, Cu-Zn alloy, Zn-Al alloy, Pb-
Silicon carbide substrates were obtained using paste compositions of Sn--Sb alloy and Bi--Cd alloy. Note that the heating temperature was changed depending on the melting point of each alloy. All of the obtained silicon carbide substrates had good bonding properties between the silicon carbide thin plate and the cordierite thin plate.
It also had excellent electrical characteristics. As described above, according to the present invention, a silicon carbide thin plate having almost the same coefficient of thermal expansion as a silicon chip, capable of directly bonding the silicon chip, and having excellent heat dissipation properties can be used as an integrated circuit substrate or
Since it is possible to supply a silicon carbide substrate that can be extremely advantageously applied as a material for IC packages and has an extremely small capacitance and can exhibit extremely high circuit functions, the effect of contributing to industry is extremely large.
１図は本発明の実施例１で製造した炭化珪素質
基板の積層構造を示す断面図、第２図は本発明の
実施例１で使用したセラミツクス薄板の形状を示
す模式図、第３図は本発明の実施例１で行なつた
静電容量を測定するためにセラミツクス薄板上に
銀ペーストで施した電極の形状を示す図である。
１…炭化珪素質薄板、２…酸化被膜層、３…接
合層、４…セラミツクス薄板、５…銀ペースト。
Figure 1 is a cross-sectional view showing the laminated structure of the silicon carbide substrate manufactured in Example 1 of the present invention, Figure 2 is a schematic diagram showing the shape of the ceramic thin plate used in Example 1 of the present invention, and Figure 3 is a cross-sectional view showing the laminated structure of the silicon carbide substrate manufactured in Example 1 of the present invention. FIG. 2 is a diagram showing the shape of an electrode made of silver paste on a thin ceramic plate for measuring capacitance in Example 1 of the present invention. DESCRIPTION OF SYMBOLS 1... Silicon carbide thin plate, 2... Oxide film layer, 3... Bonding layer, 4... Ceramics thin plate, 5... Silver paste.
Claims (1)
少なくともいずれかにMg、Al、Si、Sc、Ti、
Ｖ、Cr、Mn、Fe、Co、Ni、Cu、Zn、Ge、Zr、
Mo、Rh、Pd、Ag、Cd、In、Sn、Sb、Te、
Ta、Ｗ、Ir、Pt、Au、Tl、PbあるいはBiより
選ばれる元素あるいはそれらの化合物のいずれか
少なくとも１種を主成分とする接合剤組成物を塗
布した後、炭化珪素質薄板とセラミツクス薄板を
重ねて140〜1700℃の温度範囲内に加熱すること
により、炭化珪素質薄板とセラミツクス薄板との
間にMg、Al、Si、Sc、Ti、Ｖ、Cr、Mn、Fe、
Co、Ni、Cu、Zn、Ge、Zr、Mo、Rh、Pd、
Ag、Cd、In、Sn、Sb、Te、Ta、Ｗ、Ir、Pt、
Au、Tl、PbあるいはBiより選ばれるいずれか少
なくとも１種の金属を主成分とする接合層を形成
せしめて接合させることを特徴とする電気絶縁性
に優れた電子回路用炭化珪素質基板の製造方法。 ２ 前記接合層の厚さを少なくとも1μｍとなす
特許請求の範囲第１項記載の製造方法。 ３ 前記セラミツクス薄板の熱膨張係数は２×
10-6〜７×10-8／℃の範囲内である特許請求の範
囲第１あるいは２項記載の製造方法。 ４ 前記セラミツクス薄板はベリリア、ジルコ
ン、ムライト、シリマナイト、コージエライト、
サイアロンあるいは窒化珪素より選ばれるいずれ
か少なくとも１種を主成分とするセラミツクスで
ある特許請求の範囲第１〜３項のいずれかに記載
の製造方法。 ５ 前記セラミツクス薄板の厚さは少なくとも
0.05mmである特許請求の範囲第１〜４項のいずれ
かに記載の製造方法。 ６ 前記炭化珪素質薄板はあらかじめ酸化性雰囲
気中で加熱して表面を酸化せしめて酸化被膜層を
形成させた薄板である特許請求の範囲第１〜５項
のいずれかに記載の製造方法。[Claims] 1. Mg, Al, Si, Sc, Ti,
V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr,
Mo, Rh, Pd, Ag, Cd, In, Sn, Sb, Te,
After applying a bonding agent composition containing at least one element selected from Ta, W, Ir, Pt, Au, Tl, Pb, or Bi or a compound thereof as a main component, the silicon carbide thin plate and the ceramic thin plate are bonded. Mg, Al, Si, Sc, Ti, V, Cr, Mn, Fe,
Co, Ni, Cu, Zn, Ge, Zr, Mo, Rh, Pd,
Ag, Cd, In, Sn, Sb, Te, Ta, W, Ir, Pt,
Production of a silicon carbide substrate for electronic circuits with excellent electrical insulation properties, characterized by forming and bonding a bonding layer containing at least one metal selected from Au, Tl, Pb, or Bi as a main component. Method. 2. The manufacturing method according to claim 1, wherein the thickness of the bonding layer is at least 1 μm. 3 The coefficient of thermal expansion of the ceramic thin plate is 2×
The manufacturing method according to claim 1 or 2, wherein the temperature is within the range of 10 -6 to 7×10 -8 /°C. 4 The ceramic thin plate is made of beryllia, zircon, mullite, sillimanite, cordierite,
4. The manufacturing method according to any one of claims 1 to 3, wherein the ceramic is a ceramic whose main component is at least one selected from sialon and silicon nitride. 5. The thickness of the ceramic thin plate is at least
The manufacturing method according to any one of claims 1 to 4, wherein the thickness is 0.05 mm. 6. The manufacturing method according to any one of claims 1 to 5, wherein the silicon carbide thin plate is a thin plate that has been heated in an oxidizing atmosphere in advance to oxidize the surface to form an oxide film layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58016078A JPS59143344A (en) | 1983-02-04 | 1983-02-04 | Silicon carbide substrate for electronic circuit and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58016078A JPS59143344A (en) | 1983-02-04 | 1983-02-04 | Silicon carbide substrate for electronic circuit and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59143344A JPS59143344A (en) | 1984-08-16 |
| JPH0131698B2 true JPH0131698B2 (en) | 1989-06-27 |
Family
ID=11906517
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58016078A Granted JPS59143344A (en) | 1983-02-04 | 1983-02-04 | Silicon carbide substrate for electronic circuit and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59143344A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06105722B2 (en) * | 1985-10-14 | 1994-12-21 | 株式会社日立製作所 | Ceramic bonding method, ceramic package manufacturing method, and ceramic package |
| JP5207052B2 (en) * | 2008-08-22 | 2013-06-12 | 株式会社豊田中央研究所 | CONNECTED BODY AND METHOD FOR PRODUCING THE SAME |
| KR102484357B1 (en) * | 2021-02-26 | 2023-01-04 | 해성디에스 주식회사 | Roll-to-roll panel level package |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52126413A (en) * | 1976-04-16 | 1977-10-24 | Dainippon Toryo Kk | Method of sealing ceramics and glass |
| JPS57117261A (en) * | 1981-01-14 | 1982-07-21 | Kyocera Corp | Package for semicondutor device |
-
1983
- 1983-02-04 JP JP58016078A patent/JPS59143344A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52126413A (en) * | 1976-04-16 | 1977-10-24 | Dainippon Toryo Kk | Method of sealing ceramics and glass |
| JPS57117261A (en) * | 1981-01-14 | 1982-07-21 | Kyocera Corp | Package for semicondutor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59143344A (en) | 1984-08-16 |
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