JPH01316936A - Etching treatment device for semiconductor substrate - Google Patents

Abstract

PURPOSE:To perform an etching treatment only on the end surface of a substrate by a method wherein an etching liquid, which is fed to a groove part of a roller, is held in the groove part by its surface tension and while the end surface is in contact with the etching liquid, the semiconductor substrate is rotated. CONSTITUTION:A roller and a semiconductor substrate 1 are driven in such a way that they are respectively rotated in the direction oppositive to each other. An etching liquid 8, which is fed to a groove part 5' of the roller 5 through an etching liquid feeding nozzle 7, is held in the groove part 5' by its surface tension and is moved to a position to come into contact to an end surface 1' of the substrate 1 with the rotation of the roller 5 to perform an etching treatment for the end surface 1'. The feed of the etching liquid is stopped and pure water is discharged through a substrate cleaning nozzle 9 and a peripheral part cleaning nozzle 10 respectively to clean the substrate 1 and its peripheral part. The substrate 1 is rotated at high speed to perform a drying of the substrate. Thereby, an etching treatment is performed only on the end surface 1' of the substrate 1.

Description

DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an etching processing apparatus for semiconductor substrates (wafers), and is particularly used for etching processing of end faces of substrates.

(Prior Art) When manufacturing a semiconductor substrate, etching only the end face of the substrate was conventionally carried out as described below.

That is, as shown in FIG. 3, first, an anti-etching liquid 32 is applied to the entire back surface of the substrate 31 with a brush, and then it is pasted onto a disk 33 made of fluororesin and having the same diameter as the substrate 31. Next, the substrate 31 and the disk 33 are placed on a hot plate with the disk 33 facing downward, and baked for several minutes to bring the substrate 31 and the disk 33 into close contact. Next, the etching-resistant liquid 32 is applied with a brush to the front side (the surface on which the glossy turn is formed) of the substrate 31, and baked in the same manner as above. In addition, during the above-mentioned operation, it is important to prevent the etching-resistant liquid 32 from adhering to the substrate end surface (usually sloped) 31'.

Next, the substrate with the fluororesin disk formed as described above is held between the tweezers 34 and immersed in the etching liquid 36 in the etching liquid tank (beaker, etc.) 35 for the required time, so that only the end surface 31' of the substrate is etched. I do. After such etching treatment, the etching solution is completely removed from the substrate with the disk by washing with water, and the substrate with the disk is immersed in an organic solvent in boiling water to remove the etching solution from the substrate 31. At the same time as the disc 33 is peeled off, the anti-etching liquid 32 is also removed. Thereafter, the substrate is washed with pure water and dried.

However, the etching method described above has the following problems. (1) It is difficult and time consuming to apply anti-etching liquid to both sides of the board to prevent it from sticking to the edges of the board. (2) The work of attaching the substrate and the fluororesin disk to prevent the etching resistant solution from adhering to the end face of the substrate was difficult and took a long time.

(3) After the etching process, the substrate with the disk is immersed in an organic solvent such as dill to remove the etching-resistant solution, and post-processing such as washing with pure water and drying is required, which makes the work easier. It was difficult and took a long time. (4) Like the substrate, the fluororesin disk is immersed in the etching solution, so it must be cleaned and maintained in a clean atmosphere.

(5) Since the etching-resistant solution coats both sides of the substrate, the manufacturing yield of the substrate decreases.

(6) Since the etching solution is put into an etching solution tank and the end surface of the substrate is etched in the tank, a large amount of etching solution is used. (7) It was difficult to automate the process of coating with an etching-resistant liquid and pasting the resin disk, as these processes involved steps such as coating with an etching-resistant liquid and attaching a resin disk.

(Problems to be Solved by the Invention) The present invention has been made in order to solve various problems in the conventional etching processing methods as described above. It is an object of the present invention to provide a semiconductor substrate etching processing apparatus that can perform a semiconductor substrate etching process, improve the manufacturing yield of the substrate, and use a small amount of etching solution.

[Structure of the Invention (Means for Solving the Problems)] The semiconductor substrate etching processing apparatus of the present invention includes a semiconductor substrate holding and rotation mechanism that holds and rotates the semiconductor substrate on one side of the semiconductor substrate so that the semiconductor substrate is in a horizontal state. a grooved roller provided horizontally near the semiconductor substrate and having a groove in which the end surface of the semiconductor substrate enters the rotating peripheral surface in a non-contact state; and a grooved roller that contacts the end surface of the semiconductor substrate in the groove of the grooved roller. The present invention is characterized by comprising means for supplying an etching solution for performing etching, and a substrate cleaning nozzle for discharging pure water onto the surface of the semiconductor substrate for cleaning.

(Function) The etching liquid supplied to the groove of the grooved roller is held by surface tension, and by rotating the semiconductor substrate while the end surface is in contact with the etching liquid, etching is performed only on the end surface of the substrate. After the etching process, the substrate can be cleaned with pure water using a cleaning nozzle. Such processing can be automated, and the processing steps can be simplified, so that the processing time can be shortened. In addition, since it is not necessary to apply etching-resistant ftm to parts other than the end surfaces of the substrate, there is no risk of lowering the manufacturing yield of the substrate, compared to the case where the entire substrate is immersed in an etching solution bath. The amount of etching solution used can be reduced.

(Example) Hereinafter, an example of the present invention will be described in detail with reference to the drawings.

In Fig. 1, 1 is a semiconductor substrate whose end face needs etching treatment, and 2 is a semiconductor substrate holding/rotating mechanism that holds and rotates the lower surface of the semiconductor substrate 1 so that it is in a horizontal state. A vacuum suction device having a vertical rotating shaft 3 having a hole and connected to a motor (not shown), and an exhaust hole attached to the upper end of the rotating shaft 3 and communicating with the exhaust hole of the rotating shaft 3. A substrate chuck 4 is provided. Reference numeral 5 is a grooved roller which is arranged near the semiconductor substrate 1 and rotated, and has a groove portion 5' in the rotating peripheral surface into which the end surface of the semiconductor substrate 1 is inserted in a non-contact state, and can freely rotate in a horizontal state. , 6 are rotating shafts for rotating this roller 5, and the roller 5 is attached to the lower end thereof. Reference numeral 7 denotes an etching liquid supply nozzle which is provided near the roller 5 and supplies an etching liquid 8 to the groove 5' of the roller 5 in contact with the end surface 1' of the semiconductor substrate 1 for etching. Reference numeral 9 denotes a substrate cleaning nozzle provided diagonally above the semiconductor substrate 1 for discharging pure water onto the upper surface of the semiconductor substrate 1 for cleaning.

Reference numeral 10 denotes a peripheral cleaning nozzle which is provided near the holding and rotating mechanism 2 and discharges pure water to the peripheral area of the substrate such as the substrate cheek 4 to clean it.

Although not shown, a peripheral cleaning nozzle is also provided in addition to the above to clean the inner surface of a container (not shown) for receiving cleaning water etc. after the etching process.

Next, the operation of the above etching processing apparatus will be explained. The roller 5 and the semiconductor substrate 1 are driven to rotate in opposite directions as shown by arrows in FIG. The etching liquid 8 supplied from the etching liquid supply nozzle 7 to the groove 5' of the roller 5 is held within the groove 5' by its surface tension, and comes into contact with the end surface 1' of the semiconductor substrate as the roller 5 rotates. Move to position 9 and perform etching on the end face of the substrate. When the etching of the entire circumference of the end surface 1' of the semiconductor substrate 1 is completed, the supply of the etching liquid is stopped, and pure water is discharged from the substrate cleaning nozzle 9 and the peripheral area cleaning nozzle IQ to etching the substrate 1 and the peripheral area. Clean the area. Thereafter, the substrate 1 is rotated at high speed to dry it.

According to the semiconductor substrate etching processing apparatus as described above, the following effects can be obtained. That is, since the end surface of the substrate is brought into contact with the etching liquid supplied into the groove of the grooved roller, only the end surface of the substrate is etched;
Since it is not necessary to perform treatments such as applying and removing an anti-polishing liquid to the surface of the substrate other than the end faces, the process is shortened and the yield is greatly improved. (2) Since the etching liquid is supplied only to the grooves of the roller, the amount of etching liquid used and, by extension, the running cost of the etching liquid can be significantly reduced. (3) Since the etching process itself as described above can be automated, the processing time can be shortened, and furthermore, the etching process can be automated in connection with the preceding and subsequent processes. During automation, chipping of the substrate no longer occurs, resulting in a significant improvement in yield. (4) Since etching is performed by always bringing a small amount of new etching solution into contact with the end surface of the substrate, uneven etching is eliminated and yield is improved. (5) During the above-described etching process, there is no opportunity for the operator to come into contact with organic solvents that are harmful to the human body, improving work safety.

Note that the present invention is not limited to the above-mentioned embodiments, and various modifications are possible. For example, the means for supplying etching liquid to the grooves of a grooved roller is limited to the etching liquid supply nozzle mentioned above.
If the etching liquid is stored inside the grooved roller and at least a portion of the groove is in communication with the inside, it becomes possible to supply the etching liquid from the inside to the groove. In this case, if an etching supply passage is provided in the center of the rotating shaft 6 and this passage is communicated with the inside of the roller, it becomes possible to supply the etching liquid to the roller through this passage◇[ [Effects of the Invention] As described above, according to the semiconductor substrate etching processing apparatus of the present invention, it is possible to automatically perform etching processing only on the end face of a semiconductor substrate in a short time, and it is also possible to improve the manufacturing yield of the substrate. , the amount of etching solution used can be reduced.

[Brief explanation of the drawing]

FIG. 1 is a configuration explanatory diagram showing one embodiment of the semiconductor substrate etching processing apparatus of the present invention, FIG. 2 is a plan view showing the state of etching processing by the apparatus of FIG. 1, and FIG. 3 is a conventional semiconductor substrate etching processing. FIG. 2 is a configuration explanatory diagram showing a jig used in the method. 1... Semiconductor substrate, 1'... End surface of semiconductor substrate, 2
... Semiconductor substrate holding rotation mechanism, 3... Rotation shaft, 4.
...Vacuum chuck, 5...Roller, 5'...Roller groove, 6...Rotating shaft, 7...Etching liquid supply nozzle, 8...Etching liquid, 9, 10...Cleaning Nozzle for.

Claims (1)

[Claims] a semiconductor substrate holding and rotating mechanism that holds and rotates the semiconductor substrate on one side of the semiconductor substrate so that the semiconductor substrate is in a horizontal state; A grooved roller having a groove into which the grooved roller enters in a non-contact state, a means for supplying an etching solution to the groove of the grooved roller for contacting an end surface of a semiconductor substrate to perform etching, and a means for supplying pure water to the surface of the semiconductor substrate. 1. A semiconductor substrate etching processing apparatus, comprising: a substrate cleaning nozzle for discharging and cleaning the substrate.