KR200248930Y1 - Wafer debris removal device - Google Patents

Abstract

The present invention relates to a foreign material removal device of the wafer, the wafer is seated and rotated and has a vacuum chuck having a fixing pin for fixing the wafer to the edge, a drive source for providing a rotation driving force to the vacuum chuck, and is formed to be spaced apart from the vacuum chuck at a predetermined interval And a first spray nozzle part for injecting a first cleaning liquid onto the wafer surface on which the element is formed, and a second spray nozzle part for spraying a second cleaning liquid on the back surface of the wafer on which the device is formed to surround the fixing pin and the inside of the vacuum chuck. It is a characteristic that the foreign material of the wafer surface and its back surface with which the element was formed was removed simultaneously.

Description

Wafer Debris Removal Device

The present invention relates to a foreign material removal apparatus for wafers, and more particularly, to a foreign material removal apparatus for wafers suitable for removing foreign matters generated on a wafer during a semiconductor manufacturing process.

There are a number of processes in the semiconductor device manufacturing process, such as coating, depositing, etching and patterning various materials on the wafer surface, or heat treatment in a predetermined atmosphere. Particularly, during the etching process, particles generated during etching on the wafer ( Particles) or etching solutions may form or remain contaminants due to various causes such as residues on the surface.

In addition, since these contaminants act as defects in a subsequent process, a separate wafer cleaning process is required, and the cleaning technology used at this time removes these various contaminants by physical or chemical methods.

1 is a plan view of a foreign material removal device of the wafer according to the prior art, Figures 2A and 2B are a side view and a plan view of the first foreign material removal unit of the foreign material removal device of the wafer shown in Figure 1, Figures 3A and 3B 1 is a side view and a plan view of a second foreign matter removing unit of the foreign material removing apparatus of the wafer shown in FIG. 1.

Conventional wafer debris removal apparatus, as shown in Figure 1, the cassette index portion 108 for setting a wafer cassette (wafercassette) loaded with a plurality of wafers to be cleaned, and the wafer surface (hereinafter referred to as the wafer front surface) The first foreign matter removing unit 120 for removing the foreign matter attached to the front surface and the wafer 124 in which the foreign matter on the front surface is removed from the first foreign matter removing unit 120 are rotated by 180 degrees. A rotating part 104 for directing the back side (the opposite side of the front surface of the wafer on which the element is formed), a second foreign material removing part 130 for removing the foreign matter formed on the back side of the wafer by introducing the rotated wafer 124 and , A robot transporting unit (110) installed with a robot arm (not shown in the drawing) for transferring the wafer. 2A and 2B, the first foreign matter removing unit 120 includes a first vacuum chuck 122 and a first vacuum chuck on which the wafer 124 to be subjected to the entire surface cleaning process is seated and rotated. It has a first driving source for applying a rotational driving force to the 122, and a first injection nozzle portion (ⓐ) is formed so as to be spaced apart from the first vacuum chuck 122 by a predetermined interval to spray the first cleaning liquid on the front surface of the wafer.

3A and 3B, the second foreign material removing unit 130 is seated and rotated on the wafer 124 to be subjected to the back cleaning process, and has a second fixing pin at the edge thereof to fix the wafer 124. A second driving source that provides a rotational driving force to the vacuum chuck 132, the second vacuum chuck 132, and a second vacuum 132 which is spaced apart from the second vacuum chuck 132 at a predetermined interval to inject a second cleaning liquid onto the wafer at a high pressure. It has a spray nozzle part (ⓑ).

The process of cleaning the wafer through each of the first foreign material removing unit 120 and the second foreign material removing unit 130 using the conventional foreign material removing device configured as described above is as follows.

1 to 2B, the robot arm is drawn from the robot transporter 110 into the wafer cassette set in the cassette index unit 108 to withdraw the wafer 124 to be cleaned, and then the first foreign material. Transfer to the first vacuum chuck 122 in the removal unit 120.

At this time, the front surface of the wafer 124 placed on the first vacuum chuck 122 faces upward. Subsequently, after the wafer 124 is vacuum-adsorbed to the first vacuum chuck 122, the wafer 124 is rotated by the first driving source while rotating the adsorbed wafer 124. 1, the cleaning solution is sprayed for a predetermined time to proceed with the first cleaning process for removing foreign substances formed on the entire surface of the wafer 124.

In this case, sound wave liquid is used as the first cleaning liquid, and the first injection nozzle 126 has a sound wave liquid generator 128 for generating sound wave liquid on one side thereof, and a first rotating part 127 is formed to the left and right. It is possible to move.

When the wafer front surface foreign material removal process is completed, the supply of the first cleaning liquid from the first spray nozzle 126 is stopped, and the vacuum chuck 122 is rotated at a high speed to dry the wafer 124.

Subsequently, the wafer 124 whose front surface is cleaned using the robot arm is transferred to the rotating unit 104 so that the wafer back side is turned upward through 180 degree rotation.

Then, the wafer rotated by the robot arm is transferred to the second vacuum 132 of the second foreign matter removing unit 130.

At this time, the wafer 124 placed on the second vacuum chuck 132 is fixed by the fixing pin 123-2, and the rear surface thereof faces upward.

After the wafer 124 is vacuum-adsorbed to the second vacuum chuck 132, the second driving nozzle 136 is rotated while receiving the rotational driving force of the second driving source, thereby rotating the adsorbed wafer 124 through the second spray nozzle 136. The cleaning solution is sprayed for a predetermined time to proceed the second cleaning process for removing the foreign matter formed on the back surface of the wafer 124.

At this time, pure water (Deionized Water) is used as the second washing liquid, and the second spray nozzle 136 is provided with a high-pressure water flow generator 139 for supplying the second washing liquid at high pressure on one side thereof, and further includes a second rotating part ( 137 is formed to move left and right.

Through the above processes, the wafer 124 from which foreign substances formed on the front and rear surfaces are removed is introduced into the wafer cassette in the cassette index unit 108 by the robot arm to complete the first and second cleaning processes.

However, in the foreign material removal apparatus of the conventional wafer, the first foreign material removal portion and the second foreign material removal portion are separated from each other, thus taking up a lot of space of the device. In addition, there is a problem in that the process time is increased as the wafer is moved, thereby reducing the efficiency of the product.

The present invention is to solve this problem, it is an object of the present invention to provide a debris removal device of the wafer that can reduce the space and the process time required to proceed the debris removal of the front / back of the wafer at the same time.

Therefore, in order to achieve the above objects, the foreign material removal apparatus of the wafer of the present invention has a vacuum chuck having a fixing pin for fixing the wafer to the edge of which the wafer is seated and rotated, a driving source for providing a rotation driving force to the vacuum chuck, and a vacuum chuck and a constant It is formed to be spaced apart, the first injection nozzle portion for injecting the first cleaning liquid to the surface on which the elements of the wafer are formed, and is formed to surround the fixing pin and the vacuum chuck, the second cleaning liquid on the back surface of the surface on which the elements of the wafer are formed And a high pressure water flow generator for supplying a second washing liquid at a high pressure, which is connected to the second spray nozzle and installed with a plurality of spray nozzles for supplying a plurality of spray nozzles, so that the first spray nozzle portion and the second spray nozzle portion are simultaneously turned on. It is characterized by being on / off.

1 is a plan view for schematically explaining a foreign matter removal apparatus of a wafer according to the prior art,

2A is a side view of a conventional first foreign matter removing unit

2B is a plan view of a conventional first foreign matter removing unit,

3A is a side view of a conventional second foreign matter removing unit,

3B is a plan view of a conventional second foreign matter removing unit.

And Figure 4 is a plan view for schematically illustrating a foreign material removal apparatus of a conventional wafer of the present invention,

5A is a side view of the foreign material removing unit of the present invention,

5B is a plan view of the foreign material removing unit of the present invention.

Explanation of symbols on the main parts of the drawings

100, 200. Foreign body removal unit 120, 130, 220. Foreign body removal unit

104. Rotating part 108, 208. Cassette index part

110, 210. Robot Carrier 122, 132, 222. Vacuum Chuck

124, 224. Wafers 126, 226, 226-1. Spray nozzle

127, 137, 227. Rotator 128, 228. Sound wave generator

132-1, 222-1. Push pin 139, 229. Water flow generator

Hereinafter, the present invention will be described with reference to the accompanying drawings.

4 is a view for schematically explaining a foreign material removal apparatus of a conventional wafer of the present invention, Figure 5A is a side view of a conventional foreign material removal portion, Figure 5B is a plan view of a conventional foreign material removal portion.

The foreign material removal apparatus of the wafer of the present invention, as shown in Fig. 4, the cassette index unit 208 for setting a wafer cassette on which a plurality of wafers are loaded, and a foreign material for removing foreign substances attached to the front and back surfaces of the wafer Rejection 220, and the robot carrying unit 210 is installed, the robot arm for transferring the wafer.

At this time, the foreign material removal unit 220, referring to Figures 5A and 5B, the wafer 224 to be cleaned is rotated is seated, the vacuum chuck 222 having a fixing pin 222-1 for fixing the wafer at the edge ), A driving source for supplying rotational driving force to the vacuum chuck 222, a first spray nozzle part ⓒ which is formed to be spaced apart from the vacuum chuck 222 by a predetermined interval, and sprays the first cleaning liquid on the entire surface of the wafer 224; The second injection nozzle unit is formed to surround the fixing pin 222-1 and the vacuum chuck 220, and has a plurality of injection nozzles 226-1 that spray the second cleaning liquid at a high pressure on the back surface of the wafer 224 ( Ⓓ).

Looking at the process of cleaning the wafer using the foreign material removal device of the wafer of the present invention configured as described above are as follows.

4 to 5B, the robot arm is drawn from the robot transporter 210 into the wafer cassette set in the cassette index unit 208 to withdraw the wafer 224 to be cleaned and cleaned, and then the foreign material removal unit is removed. Transfer to vacuum chuck 222 in 220.

At this time, the wafer 224 placed on the vacuum chuck 222 is fixed by the fixing pin 222-1, and the front surface is positioned to face upward.

Subsequently, after the wafer 224 is sucked into the vacuum chuck 222 by vacuum, the wafer 224 is rotated by receiving the rotational driving force of the driving source.

In addition, the first cleaning liquid is injected through the first spray nozzle 226 for a predetermined time, and at the same time as the foreign matter removing process formed on the front surface of the wafer 224, the second cleaning liquid is returned to the wafer through the second spray nozzle 226-1. By spraying for a predetermined time to proceed with the foreign material removal process formed on the back of the wafer 224.

At this time, a sound wave liquid is used as the first cleaning liquid and pure water is used as the second cleaning liquid. In addition, the first injection nozzle 226 is provided with a sound wave generator 228 for generating sound wave liquid on one side, and the rotating unit 227 is formed to be movable to the left and right.

In addition, the second spray nozzle 226-1 is provided with a high pressure water flow generator 229 for supplying the second washing liquid at a high pressure on one side thereof.

When the foreign matter removal process formed on the front / back surface of the wafer is completed, the supply of the first and second cleaning liquids is stopped from the first injection nozzle 226 and the second injection nozzle 226-1, and the vacuum chuck 222 is turned on at a high speed. By rotating, the wafer 224 is dried to complete the cleaning process.

When the wafer drying process is completed, the wafer 224 dried by the robot arm is again introduced into the wafer cassette.

As described above, in the foreign material removal apparatus of the wafer of the present invention, the back and back surfaces of the wafer can be simultaneously cleaned in one space, thereby reducing the space of the apparatus and also shortening the processing time.

Therefore, there is an advantage that can improve the productivity of the product.

Claims (3)

A vacuum chuck having fixed pins for holding and rotating the wafer at the edges, A drive source for providing a rotational driving force to the vacuum chuck; A first injection nozzle unit which is formed to be spaced apart from the vacuum chuck by a predetermined interval and injects a first cleaning liquid onto a surface on which the device of the wafer is formed; A second injection nozzle unit formed to surround the fixing pin and the vacuum chuck, and having a plurality of injection nozzles provided on the rear surface of the surface on which the device of the wafer is formed, for spraying the second cleaning liquid at a high speed; It is connected to the second injection nozzle and provided with a high pressure water flow generator for supplying the second cleaning liquid at high pressure, The foreign material removing apparatus of the wafer, characterized in that both sides of the wafer are simultaneously cleaned by the first and second cleaning liquids injected from the first and second nozzles. The method according to claim 1, The foreign material removal apparatus of the wafer characterized by using a sound wave liquid as said 1st cleaning liquid. The method according to claim 1, Pure water (DeIonized water) is used as the second cleaning liquid.