JPH01315762A - Electrophotographic sensitive body - Google Patents

Abstract

PURPOSE:To enhance photosensitivity and surface potential and to reduce residual potential by forming an amorphous silicon carbide photoconductive layer having 2 layer structure each layer region composed of a specified amount of specified element. CONSTITUTION:The amorphous silicon carbide photoconductive layer having the 2 layer structure forming a photosensitive layer on a conductive substrate together with an organic photosemiconductor layer is composed of a first layer region containing an element of group IIIa of the periodic table in an amount of 1-10,000ppm and a second layer region containing an element of group Va of the periodic table in an amount of 0-500ppm, thus permitting the obtained electrophotographic sensitive body to be enhanced in photosensitivity and surface potential and low in residual potential.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an electrophotographic photoreceptor comprising a laminated layer of an amorphous silicon carbide photoconductive layer and an organic photoconductor layer.

[Prior art and its problems]

Photoconductive materials for electrophotographic photoreceptors include Se, 5e-Te,
.

There are inorganic materials such as AszSai, ZnO+CdS, and amorphous silicon, and various organic materials. Among them, Se was the first to be put into practical use, followed by ZnO.
, cas.

Amorphous silicon has also been put into practical use. On the other hand, among organic materials, -TNF was first put to practical use in PV, and later, a functionally separated photoreceptor was proposed in which the functions of charge generation and charge transport were shared between different materials, and this functionally separated photoreceptor The development of organic materials is progressing dramatically.

On the other hand, an electrophotographic photoreceptor in which an organic photoconductive layer is laminated on an inorganic photoconductive layer has also been proposed.

For example, there is a laminated photoreceptor with a Se layer and an organic optical semiconductor layer.
Although this photoreceptor has already been put into practical use, it has the disadvantage that Se itself is harmful and that the sensitivity is poor on the long wavelength side.

Therefore, Japanese Patent Application Laid-Open No. 56-14241 proposes a laminated photoconductor consisting of an amorphous silicon carbide photoconductive layer and an organic photoconductor layer, and this photoconductor solves the above problems and is non-polluting. Characteristics of high light sensitivity and light sensitivity were obtained.

According to the electrophotographic photoreceptor proposed above, the chemical formula is 5tI-X
It has a structure in which an amorphous silicon carbide layer represented by CXHy (O<x<1.0.05≦y≦0.2) and an organic optical semiconductor layer are sequentially laminated.

However, when the present inventors manufactured such an electrophotographic photoreceptor and measured its surface potential and residual potential, it was found that neither of them had satisfactory characteristics, and further improvements were required. did.

Therefore, the present invention was completed in view of the ridges,
The purpose is to provide an electrophotographic photoreceptor that has a high surface potential and a reduced residual potential.

[Means for Solving the Problems] According to the present invention, an amorphous silicon carbide photoconductive N (hereinafter amorphous silicon carbide is abbreviated as a-5iC) and an organic photoconductive layer are sequentially laminated on a conductive substrate. In the electrophotographic photoreceptor, the a-StC photoconductive layer has a layer structure in which a first layer region and a second layer region are sequentially formed, and the first layer region contains one group IIIa element of the periodic table. There is provided an electrophotographic photoreceptor characterized in that the second layer region contains O to 500 ppm of Group Va elements of the periodic table.

The present invention will be explained in detail below.

FIG. 1 shows the layer structure of the electrophotographic photoreceptor of the present invention.
According to the figure, an a-5iC photoconductive layer (2) and an organic photo-semiconductor layer (3) are sequentially laminated on a conductive substrate (1). The a-SiC photoconductive layer (2) has a function of charge generation, and the other organic photoconductive layer (3) has a function of charge transport.

In the present invention, a first layer region (2a) and a second layer region (2b) are sequentially formed inside the a-3iC light guide cage layer (2), and the first layer region (2a) is periodically A group IIIa element of the periodic table (hereinafter abbreviated as group IIIa element) is contained within a predetermined range, and the second layer region (2b) contains an element of group V of the periodic table.
It is characterized by containing group A elements (hereinafter abbreviated as group Va elements) within a predetermined range, thereby improving the surface potential and residual potential.

Another feature is that by forming such a layer region, it becomes a positively charging electrophotographic photoreceptor.

First, the a-5iC photoconductive layer (2) consists of an amorphous Si element and C element, as well as a hydrogen (H) element or a halogen element introduced at the end of a dangling bond between these elements, and its composition formula is as follows: It is recommended to set it as follows.

(Si 1□C-)+-yAy (A is H element or halogen element) 0 < x < 0.5 Preferably 0.01 < x < 0.4 Optimally 0.0
5 < x < 0.20.1 < y < 0.5 preferably 0.2 < V < 0.5° optimally 0.2
5 < y < 0.45X value is O < x < 0.5
Within the range of 0.01, photoconductivity is obtained;
When it is set within the range of < x < 0.4, the photosensitivity on the short wavelength side is increased, and the photoconductivity is significantly increased, so that the excitation function of optical carriers is increased.

In addition, when the y value is less than 0.1, the film quality deteriorates, resulting in a significant decrease in photoconductivity, and furthermore, when 0゜'l <
When set within the range of y < 0.5, the dark conductivity is small and the photoconductivity is large, resulting in excellent photoconductivity and excellent adhesion to the substrate.

This a-SiC photoconductive layer (2) contains hydrogen (H) elements and halogen elements for dangling bond termination, but these elements reduce the localized level density in the hand gap. It is desirable in that it

In addition, the thickness of a-5iC photoconductive N(2) is 0.05 to 5
am, preferably within the range of 0.1 to 3 μm; within this range, high photosensitivity can be obtained and the residual potential will be low.

Next, for the first layer region (2a), the Group IIIa element is added in an amount of 1 to 110,000 pp, preferably 500 to 5,000 pp.
By containing pm, it becomes a p-type semiconductor, a-5i
Photocarriers generated in the C photoconductive layer (2), especially positive charges, can flow smoothly to the substrate side, and carriers on the substrate side can be prevented from flowing into the a-SiC photoconductive layer (2). can do. That is, the first layer region (2a) can be said to be in non-ohmic contact with the substrate (1) in that it has rectifying properties.

Therefore, this non-ohmic contact increases the surface potential and reduces the residual potential.

In this way, the first layer region (2a) is represented by the content of the IIIa group element, but if the content is non-uniform over the layer thickness direction, it is represented by the average content.

If the concentration of Group IIIa elements is less than 1 ppm, the function of blocking carrier injection from the substrate will be reduced, and the surface potential will not increase. If it exceeds 110,000 ppm, internal defects in this layer region will increase, resulting in poor film quality. decreases, causing a decrease in surface potential and an increase in residual potential. The present inventors have determined that the preferable range of the above element content is 500 to 500.
0 ppm, and it was confirmed that both the surface potential and photosensitivity characteristics were improved by this. In addition, the above elements are 1-
It was also confirmed that the photosensitivity was significantly increased within the range of 1100 pp.

Further, it is desirable that the first layer region (2a) is set more specifically by its thickness as well as the Group IIIa element content.

That is, the thickness of the first layer region (2a) is 0.05 to 5 μm.
, preferably set within the range of 0.1 to 3 μm,
If it is within this range, it is advantageous in that the residual potential can be reduced and the withstand voltage of the photoreceptor can be increased.

Furthermore, it is desirable that the SiC composition ratio of the first layer region (2a) is set as follows, as well as the Group IIIa element content and thickness.

That is, when expressed by the composition formula St,, C, 0.1<
It is preferable to set x < 0.5, and within this range, the surface potential can be increased and the adhesion to the substrate can be improved.

In addition, in setting the C element ratio as described above,
It is preferable to make the ratio larger than that of the second layer region (2b), which is advantageous in that the surface potential can be increased and the adhesion with the substrate can be improved.

The above-mentioned nIa group elements include B, AI, Ga, In, etc., but B has excellent covalent bonding properties and can sensitively change semiconductor properties, and in addition, it is said that it can provide excellent charging ability and photosensitivity. desirable in that respect.

For the second layer region (2b), 0 to 5 Va group elements are added.
00ppm, preferably O to 100ppH1, thereby forming an n-type semiconductor layer on the organic optical semiconductor layer (3) side inside the a-3iC photoconductive layer (2), and the Photocarriers, especially negative charges, are transferred to an organic photo-semiconductor layer (3
), resulting in a higher surface potential and a lower residual potential. Incidentally, when the Va group element content is O, it means that it is substantially not contained.

In this way, the second layer region (2b) is represented by the content of the Va group element, but if the content is non-uniform over the layer thickness direction, it is represented by the average content.

If the content of the Va group element exceeds 500 ppm, the ability to generate photoexcited carriers will be poor, resulting in a decrease in photosensitivity.

Further, it is desirable that the second layer region (2b) is set more specifically by its thickness as well as the Va group element content.

That is, the thickness of the second layer region (2b) is 0.05 to 5 μm.
, preferably set within the range of 0.1 to 3 μm,
Within this range, high photosensitivity can be obtained and the residual potential will be low.

The Va group elements include N+P+As+Sb+Bt, and P is preferable because it has excellent covalent bonding properties and can sensitively change semiconductor properties, and also provides excellent charging and photosensitivity.

As described above, according to the electrophotographic photoreceptor of the present invention, a-S
A p-n junction is formed in the iC photoconductive layer (2), and therefore, among the carriers generated in this N(2), electrons go toward the organic photoconductive layer (3), while holes go toward the substrate (1). ). Therefore, it becomes a positively charged electrophotographic photoreceptor.

In such a positively charged electrophotographic photoreceptor, an electron-withdrawing compound is selected for the organic photosemiconductor layer (3), and examples of this compound include 2,4,7-)linitrofluorenone.

Further, the substrate (1) may be a metal conductor such as copper, brass, SUS, or the like, or an insulator such as glass or ceramics coated with a conductor thin film on the surface.
Among these, AI is advantageous in terms of cost and adhesion to the a-SiC layer.

Thus, according to the present invention, the a-5iC photoconductive layer contains III
By forming a layer region containing a group A element or a group Va element within a predetermined range, the surface potential and residual potential are improved, and furthermore, by setting the SiC element ratio of this photoconductive layer within a predetermined range. The light sensitivity is increased.

Furthermore, as shown in FIG. 12, the electrophotographic photoreceptor of the present invention has a second layer region (2b) and an organic photoconductor layer (3).
A layer region containing a large amount of C element may be formed between the
When this carbon (C) element high content layer region is formed, the difference in dark conductivity between the second layer region (2b) and the organic optical semiconductor layer (3) becomes significantly small, and as a result, both layer(
2b) Carriers are no longer trapped between (3).

That is, the dark conductivity of the second layer region (2b) is approximately IQ-m~
10-'' (Ω・cm)−, and the dark conductivity of the other organic optical semiconductor layer (3) is about 10−14 to 10−” (Ω・cm).
cm)-', and therefore the second l1SI region (2b
The carriers generated in ) do not flow smoothly to the organic optical semiconductor layer (3) due to the large difference in dark conductivity. Therefore,
The present inventors formed the dark conductivity of the C element high content layer region (2c), thereby reducing the dark conductivity of the layer region (2c), and reducing the dark conductivity of the layer region (2c) between both layers (2b) (3). It has been found that the difference in dark conductivity can be reduced, and as a result, both characteristics of photosensitivity and residual potential are improved.

Such C element high content layer region (2c) is as follows:
It is expressed by element content ratio and thickness.

The C element content ratio is 0.2 < X value of 5iI-XCX
It is best to set it within the range of x <'0.5, preferably 0.3 < If the difference in conductivity cannot be made as small as required, thereby making it impossible to improve the respective characteristics of photosensitivity and residual potential, and if the X value is 0°5 or more, the a-SiC photoconductive Carriers are likely to be trapped in the layer, resulting in a decrease in photosensitivity.

In addition, the thickness is 10 to 2000 people, preferably 500 to 10 people.
If the number of people is less than 10, the characteristics of photosensitivity and residual potential cannot be improved, and if the number of people exceeds 2,000, the residual potential tends to be large. Become.

Such a second layer region (2b) and high C element content N
The C element content in each region (2c) may be varied in the layer thickness direction. For example, there are examples shown in FIGS. 6 to 11, in which the horizontal axis is the layer thickness direction, a is the interface between the first layer region (2a) and the second layer region (2b), b is the interface between the second layer region (2b) and the high C element content layer region (2c), and C is the interface between the second layer region (2b) and the high C element content layer region (2c).
c) and the organic optical semiconductor layer (3), and the vertical axis represents the C element content.

In this way, when the C element content is changed in the layer thickness direction inside the second layer region (2b) or the C element high content layer region (2c), the C element content ratio (X value) respectively This corresponds to the average content ratio of C element in the entire layer regions (2b) (2c).

Furthermore, in the electrophotographic photoreceptor of the present invention, each of the first layer region (2a) and the second layer region (2b) is
The content of group A elements and the content of group Va elements may be varied in the layer thickness direction. Examples are shown in FIGS. 15-20.

In these figures, the horizontal axis is the layer thickness direction, d is the interface between the substrate (1) and the first layer region (2a), and a is the interface between the first layer region (2a) and the second layer region (2b). ), and e represents the interface between the second layer region (2b) and the organic optical semiconductor layer (3), and the vertical axis represents the respective content of the NLA group element or the Va group element.

In this way, the first layer region (2a) or the second N region (2
In b), Group IIIa elements or V are added in the layer thickness direction, respectively.
When the content of the group a element is changed, the element content corresponds to the average content of each layer region (2a) (2b) as a whole.

Furthermore, when the contents of group IIIa elements and group Va elements are changed as described above, the first layer region (2a) and the second IJ
An intrinsic semiconductor layer is formed between the jl region (2b).

Next, a method for manufacturing the electrophotographic photoreceptor of the present invention will be described.

To form the a-SiC layer, there are thin film forming methods such as glow discharge decomposition method, ion blating method, reactive sputtering method, vacuum evaporation method, and CVD method.

When using the glow discharge decomposition method, Si element-containing gas and C
A film is formed by combining element-containing gases and plasma decomposing the mixed gas. This Si element-containing gas includes SiH4,
5izH6, 5iJe+SiF4, 5iC14, 5iH
C1, etc., and C element-containing gases include CH4,
CzL.

There are CJz, CJe, etc., and C211□ is particularly desirable in that it can provide high-speed film formation.

The glow discharge decomposition device used in this example will be explained with reference to FIG.

In the figure, the first tank (4), second tank (5), third tank (6), fourth tank (7), and fifth tank (8) have SiH+, CJz, PHz, and BJb (P), respectively. It gas and B 2 II 6 gas (both diluted with hydrogen gas) and 11□ are sealed, and these gases are passed through the corresponding first regulating valve (9), second regulating valve (10), and It is released by opening the third regulating valve (11), the fourth regulating valve (12), and the fifth regulating valve (13). The flow rate of the released gas is controlled by a mass flow controller (14).
(15) (16) (17) (18), each gas is mixed and sent to the main pipe (19).

Note that (21) and (21) are stop valves.

The gas flowing through the main pipe (19) flows into the reaction tube (22), and a capacitively coupled discharge electrode (23) is installed inside this reaction tube (22), and a cylindrical film-forming electrode (23) is installed inside the reaction tube (22). A substrate (24) is placed on a substrate support (25), the substrate support (25) is rotationally driven by a motor (26),
Along with this, the substrate (24) is rotated. Then, the electrode (23) has a power of 50W to 3Kw and a frequency of 1 to 50M.
Hz high frequency power is applied and the substrate (24) is heated by suitable heating means to a temperature of about 200-400°C, preferably about 200-350°C. In addition, the reaction tube (
22) is connected to a rotary pump (27) and a diffusion pump (28), which maintain the vacuum state required during film formation by glow discharge (gas pressure during discharge 0.01 to 2.0).
Torr) is maintained.

The substrate (2
For example, when forming an a-SiC layer containing P element on 4), the first regulating valve (9), the second regulating valve (10), the third regulating valve (11), and the 511th regulating valve (13) Open SiH
4. Release each gas of C2H2, pH3, and H2, and measure the release amount using a mass flow controller (14) (15)
(16) Controlled by (1B), each gas is mixed and flows into the reaction tube (22) via the main pipe (19). Then, when the vacuum state inside the reaction tube, the substrate temperature, and the high-frequency power for applying the electrode are set to predetermined conditions, a glow discharge occurs, and as the gas decomposes, the a-
A SiC film is formed on a substrate at high speed.

After the a-SiC layer is formed by the thin film forming method as described above, a semiconductor layer is next formed.

The organic photosemiconductor layer is formed by a dip coating method or a coating method, in which the photosensitive material is immersed in a coating solution in which it is dispersed in a solvent, and then pulled up at a constant speed;
This method involves natural drying and heat aging (approximately 150°C, approximately 1 hour), and the latter coating method involves applying a photosensitive material dispersed in a solvent using a coater. , followed by hot air drying.

〔Example〕

Next, examples of the present invention will be described.

(Example 1) Using the glow discharge decomposition apparatus shown in Fig. 2, the H2 gas was 2703 ccI1 at a flow rate of 200 sec.
The flow rate of C2!1□ gas was changed, and the gas pressure was 0.6 Torr and the high frequency power was 15
The substrate temperature was set at 250° C., and an a-SiC film (film diameter: 1 μm) was formed by glow discharge.

In this way, the carbon content ratio of the a-SiC film was changed, and the amount of carbon in the film was measured by the XMA method.
Further, when the photoconductivity and dark conductivity were measured, the results shown in FIG. 3 were obtained.

In Figure 3, the horizontal axis is the carbon content ratio, i.e., Si, -XC
It is the X value of , a, b are respective characteristic curves.

Furthermore, when the hydrogen content of each of the above a-3iC films was determined by infrared absorption measurement, the results shown in FIG. 4 were obtained.

In Fig. 4, the horizontal axis is the value of Si, CX, and the vertical axis is the hydrogen content, i.e. (Si+-yCX)ryH
This is the y value of y, the ◯ mark is a plot of the amount of hydrogen bonded to the Si atom, the * mark is the plot of the amount of hydrogen bonded to the C atom, and c and d are the respective characteristic curves.

As is clear from FIG. 4, it can be seen that the a-SiC films of this example all have y values within the range of 0.3 to 0.4.

Furthermore, as is clear from Fig. 3, if the carbon content ratio It can be seen that excellent photosensitivity can be obtained.

(Example 2) Next, in this example, 5iHa gas is introduced at a flow rate of 200 sec, CtHt gas is introduced at a flow rate of 20 sec, and H2 gas is introduced at a flow rate of 0 to 101,000 se. 0.3~1.2T
orr, and an a-5iC film (film diameter: 1 μm) was formed by glow discharge.

In this way, various a-SiC films were formed with the carbon content ratio X set to 0.3 and the hydrogen content y varied, and the photoconductivity and dark conductivity of each film were measured. The results shown in FIG. 5 were obtained.

In FIG. 5, the horizontal axis represents the hydrogen content, that is, [Si, -XCx
) +-y HyOy value, the vertical axis represents the conductivity, and the circle mark indicates the emission wavelength of 550 nm (light intensity 50 μ-/cm2)
is a plot of photoconductivity against light, * is a plot of dark conductivity, and elf is each characteristic curve.

As is clear from Figure 5, when the y value exceeds 0.2,
It can be seen that high photoconductivity as well as low dark conductivity are obtained.

(Example 3) An aluminum flat plate (25 mm x 50 mm) with a polished surface was installed inside the reaction tube of a glow discharge decomposition device, and layer area 1 (2a ) and a second layer region (2b) are formed. Next, a disk-shaped (3 mmφ) aluminum electrode was formed by vacuum evaporation to produce a photoconductive member as shown in FIG. 13. In the figure, (29) and (30) are a flat plate and an aluminum electrode, respectively.

[Margin below]

The first layer region (2a) and the second layer region (2a) formed in this way
The amount of carbon for each layer region (2b) is XM
When the content of element B was measured using method A and a secondary ion mass spectrometer, the results shown in Table 2 were obtained.

Table 2 As shown in FIG. 13, the a-5iC photoconductive member thus obtained was applied with a voltage to the aluminum electrode (30) side, and the flat plate (29) was made conductive to the ground side, thereby causing a voltage-current When the characteristics were measured, the results shown in FIG. 14 were obtained.

In addition, in this example, when forming the first Ft TJ region, BzHi gas was not introduced, and the other conditions were set to be exactly the same as in this example. A photoconductive member was manufactured and used as a comparative example, and its voltage-current characteristics were also measured.

In FIG. 14, the horizontal axis is the voltage applied to the aluminum electrode (30), the vertical axis is the current value, the circle mark is a measurement plot of the a-5iC photoconductive member according to the present invention, and the mark is a comparison Figure 3 is a measurement plot of an example a-3iC photoconductive member, g,
h is the respective characteristic curve.

As is clear from FIG. 14, according to the a-3iC photoconductive member according to the present invention, even when a positive voltage is applied to the aluminum electrode (30), almost no current flows; When a voltage of 1 is applied, a significantly large current flows.

(Example 4) The same a-SiC photoconductive layer as in (Example 3) was formed on an aluminum substrate, and then an organic photoconductive layer containing 2.4.7-1-linitrofluorenone as a main component (film thickness: 15 μm)
) was formed and used as an electrophotographic photoreceptor.

When the properties of the electrophotographic photoreceptor thus obtained were measured using an electrophotographic property measuring device, it was found that excellent photosensitivity and surface potential were obtained, as well as a low residual potential.

(Example 5) In manufacturing the electrophotographic photoreceptor of (Example 4) above,
As a comparative example of (Example 3), an electrophotographic photoreceptor was manufactured by using an a-SiC photoconductive layer and further forming the same organic photoconductor layer.

When the photosensitivity of this electrophotographic photoreceptor was measured, (Example 4
), the residual potential was about 12χ lower than that of the electrophotographic photoreceptor, and the residual potential was about 9χ higher.

(Example 6) In manufacturing the electrophotographic photoreceptor of (Example 4), the inventors changed the pH, the maximum gas flow rate, and the gas flow rate. 15 types of electrophotographic photoreceptors (photoreceptors A to 0) with different B element content in the layer region and P element content in the second layer region
was produced.

When the photosensitivity, surface potential and residual potential of these electrophotographic photoreceptors were measured, the results shown in Table 3 were obtained.

In the same table, photosensitivity is classified into three levels, ◎, ○, and Δ, based on relative evaluation. ◎ indicates the best photosensitivity, and ○ indicates slightly more expensive light. This is the case where sensitivity was obtained, and the Δ mark is the case where the photosensitivity was slightly inferior to the others.

Characteristic evaluation of surface potential is also divided into three stages: ◎ mark, O mark, and Δ mark. ◎ mark is when the highest surface potential is obtained, and ○ mark is when a somewhat higher surface potential is obtained. Yes, and the Δ mark indicates a case where a higher surface potential was not observed compared to others.

In addition, the residual potential is also evaluated relative to three levels.
The ◎ mark indicates the case where the residual potential is the smallest, the ○ mark indicates the case where a slight decrease in the residual potential is observed, and the △ mark indicates the case where no reduction in the residual potential is observed compared to the others. .

[Margin below]

Table 3 Photoreceptors marked with * are outside the scope of the present invention.

As is clear from Table 3, photoreceptor BM had excellent photosensitivity, had a high surface potential, and was found to have a reduced residual potential.

However, it can be seen that the photoreceptor ^ is inferior in photosensitivity and surface potential, and photoreceptors N and O have not been improved in any of the characteristics of photosensitivity, surface potential, and residual potential.

〔Effect of the invention〕

As described above, according to the electrophotographic photoreceptor of the present invention, a-5
By forming each layer region containing IIIa group elements and Va group elements within a predetermined range inside the iC photoconductive layer, excellent photosensitivity is obtained, the surface potential is increased, and the residual potential is reduced. I was able to do that.

Further, according to this electrophotographic photoreceptor, the a-3iC photoconductive layer is in non-ohmic contact with the substrate, which improves the rectifying function and provides a high surface potential and a low residual potential for positive charging electrophotography. The photoreceptor was provided.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view showing the layer structure of the electrophotographic photoreceptor of the present invention, FIG. 2 is a schematic diagram of a glow discharge decomposition device used in Examples, and FIG. 3 is a line showing the relationship between carbon content ratio and electrical conductivity. 4 is a diagram showing the relationship between carbon content ratio and hydrogen content, FIG. 5 is a diagram showing the relationship between hydrogen content and electrical conductivity, and FIGS. 8, 9, 10, and 11 are diagrams showing the carbon content in the IW layer thickness direction of the amorphous silicon carbide photoconductive layer. FIG. 12 is a sectional view showing another layer structure of the electrophotographic photoreceptor of the present invention, FIG. 13 is an explanatory diagram for measuring the voltage-current characteristics of the photoconductive member, and FIG. 14 is the voltage-current characteristic. Also, FIGS. 15, 16, 17, 18, 19, and 20 are III diagrams in the thickness direction of the amorphous silicon carbide photoconductive layer.
FIG. 2 is a diagram showing the content of group A elements and the content of group Va elements. l... Conductive substrate 2... Amorphous silicon carbide photoconductive 2a.
...First layer region 2b...Second layer region 3 ...Organic optical semiconductor layer Patent applicant (663) Kyocera Corporation Representative Kinji Anjo □ Takao Kawamura

Claims (1)

[Claims] In an electrophotographic photoreceptor in which an amorphous silicon carbide photoconductive layer and an organic photoconductive layer are sequentially laminated on a conductive substrate, a first layer region and a second layer region of the amorphous silicon carbide photoconductive layer are sequentially formed. The first layer region contains 1 to 10,000 ppm of Group IIIa elements of the periodic table, and the second layer region contains 0 to 500 ppm of Group Va elements of the periodic table. An electrophotographic photoreceptor.