JPH01313329A - Production of thin film of compound metal oxide - Google Patents
Production of thin film of compound metal oxideInfo
- Publication number
- JPH01313329A JPH01313329A JP63143595A JP14359588A JPH01313329A JP H01313329 A JPH01313329 A JP H01313329A JP 63143595 A JP63143595 A JP 63143595A JP 14359588 A JP14359588 A JP 14359588A JP H01313329 A JPH01313329 A JP H01313329A
- Authority
- JP
- Japan
- Prior art keywords
- metal oxide
- alkoxide
- thin film
- expressed
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- -1 compound metal oxide Chemical class 0.000 title claims abstract description 28
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 15
- 239000010409 thin film Substances 0.000 title claims abstract description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 229910052791 calcium Inorganic materials 0.000 claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims abstract description 12
- 229910052712 strontium Inorganic materials 0.000 claims abstract description 12
- 150000004703 alkoxides Chemical class 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 7
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 4
- 230000001678 irradiating effect Effects 0.000 claims abstract description 4
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims abstract description 3
- 239000007787 solid Substances 0.000 claims abstract description 3
- 239000011575 calcium Substances 0.000 claims description 15
- 239000002131 composite material Substances 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 150000004706 metal oxides Chemical class 0.000 claims description 12
- 239000003960 organic solvent Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical class [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 abstract description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 10
- 239000000843 powder Substances 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 239000002904 solvent Substances 0.000 abstract description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-M Formate Chemical compound [O-]C=O BDAGIHXWWSANSR-UHFFFAOYSA-M 0.000 abstract description 2
- 125000000217 alkyl group Chemical group 0.000 abstract description 2
- 150000003839 salts Chemical class 0.000 abstract description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- 239000002253 acid Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 description 14
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 4
- 235000019441 ethanol Nutrition 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 4
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 239000012456 homogeneous solution Substances 0.000 description 3
- 150000002430 hydrocarbons Chemical group 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000002244 precipitate Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- OBETXYAYXDNJHR-UHFFFAOYSA-N 2-Ethylhexanoic acid Chemical compound CCCCC(CC)C(O)=O OBETXYAYXDNJHR-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- SHZIWNPUGXLXDT-UHFFFAOYSA-N caproic acid ethyl ester Natural products CCCCCC(=O)OCC SHZIWNPUGXLXDT-UHFFFAOYSA-N 0.000 description 2
- ZKXWKVVCCTZOLD-UHFFFAOYSA-N copper;4-hydroxypent-3-en-2-one Chemical compound [Cu].CC(O)=CC(C)=O.CC(O)=CC(C)=O ZKXWKVVCCTZOLD-UHFFFAOYSA-N 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- KNPRLIQQQKEOJN-UHFFFAOYSA-N tri(propan-2-yloxy)bismuthane Chemical compound [Bi+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] KNPRLIQQQKEOJN-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-L L-tartrate(2-) Chemical compound [O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O FEWJPZIEWOKRBE-JCYAYHJZSA-L 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229940022663 acetate Drugs 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 150000001449 anionic compounds Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- MMLSWLZTJDJYJH-UHFFFAOYSA-N calcium;propan-2-olate Chemical compound [Ca+2].CC(C)[O-].CC(C)[O-] MMLSWLZTJDJYJH-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229940001468 citrate Drugs 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 150000004699 copper complex Chemical class 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 1
- 125000005594 diketone group Chemical group 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000009313 farming Methods 0.000 description 1
- 150000003948 formamides Chemical class 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 150000003840 hydrochlorides Chemical class 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910001412 inorganic anion Inorganic materials 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 125000005609 naphthenate group Chemical group 0.000 description 1
- 210000003739 neck Anatomy 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 229940039748 oxalate Drugs 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- OHULXNKDWPTSBI-UHFFFAOYSA-N strontium;propan-2-olate Chemical compound [Sr+2].CC(C)[O-].CC(C)[O-] OHULXNKDWPTSBI-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- MYXUYXMJVQWRPU-UHFFFAOYSA-N triethoxybismuthane Chemical compound [Bi+3].CC[O-].CC[O-].CC[O-] MYXUYXMJVQWRPU-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G29/00—Compounds of bismuth
- C01G29/006—Compounds containing, besides bismuth, two or more other elements, with the exception of oxygen or hydrogen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0772—Processes including the use of precursors
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、複合金属酸化物薄膜の製造方法に関する。よ
り特定して言えば、超電導材料、磁気センサーとして有
用な特定組成を有する複合金属酸化物薄膜の製造方法に
関する。特に、特定組成のビスマスとストロンチウムと
カルシウムと銅の複合金属酸化物は、77°に以上で超
電導を示す物質として期待されている。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for producing a composite metal oxide thin film. More specifically, the present invention relates to a method for producing a composite metal oxide thin film having a specific composition useful as a superconducting material and a magnetic sensor. In particular, a composite metal oxide of bismuth, strontium, calcium, and copper with a specific composition is expected to exhibit superconductivity at an angle of 77 degrees or more.
複合金属酸化物の一般的な製造方法としては、まず、
(1)各金属成分をそれぞれの酸化物、炭酸塩等の粉末
の状態で物理的に粉砕混合した後、焼成することにより
固相反応を行なわせる方法、(2)各金属成分を硝酸塩
、塩酸塩、硫酸塩等の水溶性塩の形で均一溶液とし、こ
れに炭酸イオン、水酸イオン、シュウ酸イオン等を添加
して、不溶性の水酸化物、炭酸塩、シュウ酸塩等の形で
各成分を共沈させ、沈殿を分離、焼成する方法、(3)
各金属成分のアルコキシドあるいは、 β−ジケトン錯
体または、β−ケトエステル錯体または、有機酸塩等の
混合物を有機溶媒に溶解し、均一溶液とした後、加水分
解し、沈殿を分離した後焼成する方法。The general method for manufacturing composite metal oxides is as follows: (1) After physically grinding and mixing each metal component in the powder state of each oxide, carbonate, etc., a solid phase reaction is performed by firing. (2) Each metal component is made into a homogeneous solution in the form of water-soluble salts such as nitrates, hydrochlorides, and sulfates, and carbonate ions, hydroxide ions, oxalate ions, etc. are added to this solution to form insoluble A method of co-precipitating each component in the form of hydroxide, carbonate, oxalate, etc., separating the precipitate, and calcining it, (3)
A method in which a mixture of alkoxides, β-diketone complexes, β-ketoester complexes, organic acid salts, etc. of each metal component is dissolved in an organic solvent to form a homogeneous solution, hydrolyzed, and the precipitate separated, followed by firing. .
等により目的とする複合金属酸化物粉末を得、さらに、
ホットプレス等の方法によったターゲットを作製し、一
般にスパッタリングと言われる方法により基板上に薄膜
を作製する方法がある。etc. to obtain the desired composite metal oxide powder, and further,
There is a method in which a target is prepared by a method such as hot pressing, and a thin film is formed on a substrate by a method generally called sputtering.
しかしながら、これらの方法では、まず複合金属酸化物
粉末を合成しなければならないうえ、それぞれの粉末農
遣方法においても、
(1)の方法では、粉末状態で混合後に焼成するため粉
末粒子の接触部分から反応が進行するために、未反応部
分が残りやすく、目的組成からのずれの原因となること
がある。However, in these methods, composite metal oxide powder must first be synthesized, and in each of the powder farming methods, in method (1), the contact areas of the powder particles are mixed and then fired in the powder state. Since the reaction proceeds from the start, unreacted portions tend to remain, which may cause a deviation from the target composition.
(2)の方法では、溶液中の各元素の沈殿条件が異なる
ため、溶液中の金属の割合と同じ金属の同じ割合の共沈
殿を生じるとは限らないから、やはり目的組成からのず
れが起こるのは、避けられない。さらに、出発原料であ
る無機陰イオン(NO,−1Cド、so4”−等)が、
熱処理しても内部に不純物として残留してしまい粉末の
特性を下げる。In method (2), since the precipitation conditions for each element in the solution are different, it does not necessarily result in co-precipitation of the same proportion of the same metal as the proportion of the metal in the solution, so deviation from the target composition still occurs. It's inevitable. Furthermore, inorganic anions (NO, -1C do, so4''-, etc.), which are the starting materials,
Even after heat treatment, impurities remain inside and deteriorate the properties of the powder.
(3)の方法では、目的組成の沈殿は得られるが、残留
する有機物あるいは水酸基を取り除くために熱処理が必
要となる。In method (3), a precipitate having the desired composition can be obtained, but heat treatment is required to remove residual organic substances or hydroxyl groups.
等の問題がある。There are other problems.
さらに、スパッタリングにより薄膜を製造するためには
、高価なスパッタリング装置や、ホットプレス装置を使
用しなければならない。Furthermore, in order to manufacture thin films by sputtering, expensive sputtering equipment and hot press equipment must be used.
あるいは、アルコキシド等を利用する方法としては、ほ
かに、
各金属成分のアルコキシドあるいは、 β−ジケトン錯
体または、 β−ケトエステル錯体または、有機酸塩等
の混合物を有機溶媒に溶解し、均一溶液とした後、この
溶液を基板に塗布し、空気中の水分等により、加水分解
させ、熱処理をして複合金属酸化物薄膜を得る方法があ
るが、この方法によると残留する有機物や水酸基を除去
するために熱処理をしなければならず、雰囲気によって
は炭素等が残ってしまう。Alternatively, as a method of using alkoxides, etc., the alkoxides of each metal component, β-diketone complexes, β-ketoester complexes, or mixtures of organic acid salts, etc. are dissolved in an organic solvent to form a homogeneous solution. After that, there is a method of applying this solution to a substrate, hydrolyzing it with moisture in the air, and heat-treating it to obtain a composite metal oxide thin film. heat treatment is required, and depending on the atmosphere, carbon, etc. may remain.
等の問題がある。There are other problems.
c問題を解決するための手段〕
これらの問題点は、出発物質として、ビスマスのアルコ
キシドとストロンチウムのアルコキシドとカルシウムの
アルコキシドと、銅の有機酸塩、アルコキシド、β−ジ
ケトン錯体または、β−ケトエステル錯体の混合物を有
機溶媒に溶解し、この溶液を基体に塗布したのち、紫外
線および赤外線を照射し、分解、酸化反応を行なわせる
ことにより達成される。Means for Solving Problem c] These problems are solved by using bismuth alkoxide, strontium alkoxide, calcium alkoxide, and organic acid salts of copper, alkoxides, β-diketone complexes, or β-ketoester complexes as starting materials. This is achieved by dissolving a mixture of these in an organic solvent, applying this solution to a substrate, and then irradiating it with ultraviolet and infrared rays to cause decomposition and oxidation reactions.
本発明は、ビスマスのアルコキシドとストロンチウムの
アルコキシドとカルシウムのアルコキシドと、銅の有機
酸塩、アルコキシド、 β−ジケトン錯体または β−
ケトエステル錯体を目的とする複合酸化物の金属の割合
と同じ割合で金属を含むように混合して有機溶媒に溶解
し、この溶液を固体状の基体に塗布した状態で、紫外線
および赤外線を照射し、分解および酸化を行なわせるこ
とを特徴とする複合金属酸化物薄膜の製造方法を提供す
る。The present invention combines bismuth alkoxide, strontium alkoxide, calcium alkoxide, and copper organic acid salts, alkoxides, β-diketone complexes, or β-
The mixture is mixed so that the metal is contained in the same proportion as the metal in the composite oxide intended to form the ketoester complex, dissolved in an organic solvent, and while this solution is applied to a solid substrate, it is irradiated with ultraviolet and infrared rays. Provided is a method for producing a composite metal oxide thin film, which comprises performing decomposition and oxidation.
本発明において、ビスマスのアルコキシドとは。In the present invention, what is bismuth alkoxide?
−綴代Bi (OR” ) (OR” ) (OR’
)で表され、R”、 R”、 R’が同一または異別の
01〜C6アルキル基である化合物である。-Tsuriyo Bi (OR”) (OR”) (OR'
), and R'', R'', and R' are the same or different 01-C6 alkyl groups.
本発明において、ストロンチウムおよびカルシウムのア
ルコキシドとは、−綴代A (OR’ ) (OR”
)で表され、AがSrあるいはCaであり、R1,R2
が同一または異別のC1〜C,アルキル基である化合物
である。In the present invention, the alkoxides of strontium and calcium are defined as -A (OR') (OR')
), A is Sr or Ca, R1, R2
are the same or different C1-C, alkyl groups.
本発明において、銅の有機酸塩の具体例は蟻酸塩、プロ
ピオン酸塩、酢酸塩、クエン酸塩、グルコン酸塩、酒石
酸塩、シュウ酸塩、ナフテン酸塩、2−エチルヘキサン
酸塩等である。In the present invention, specific examples of copper organic acid salts include formate, propionate, acetate, citrate, gluconate, tartrate, oxalate, naphthenate, 2-ethylhexanoate, etc. be.
銅のアルコキシド、β−ジケトン錯体およびβ−ケトエ
ステル錯体はCu (OR)n(X)、で表され、Rは
00〜C6の炭化水素基であり、QはOllまたは2で
あり1、mはOllまたは2で、α+m=2であり、又
は一般式
で表され、R”、 R”が01〜C6の炭化水素基であ
り。Copper alkoxides, β-diketone complexes and β-ketoester complexes are represented by Cu(OR)n(X), where R is a 00-C6 hydrocarbon group, Q is Oll or 2, 1, and m is Oll or 2, α+m=2, or is represented by the general formula, and R'' and R'' are 01 to C6 hydrocarbon groups.
R3が水素原子またはC1〜C5の炭化水素基である化
合物である。A compound in which R3 is a hydrogen atom or a C1 to C5 hydrocarbon group.
本発明の方法においては、アルコキシドおよび銅錯体を
溶解し、これらに対して不活性であれば、殆どあらゆる
有機溶媒が使用できる。その具体例は、酢酸エチル、プ
ロピオン酸エチル等のエステル頚、メチルアルコール、
エチルアルコール、ローおよび1so−プロピルアルコ
ール、n−、1so−1sec−およびtert−ブチ
ルアルコール、n−ペンチルアルコール、 1so−ア
ミルアルコール、ヘキシルアルコール、オクチルアルコ
ール等のアルコール類、ペンタン、ヘキサン、シクロヘ
キサン、ロチルシクロヘキサン等の脂肪族飽和炭化水素
類、ベンゼン、トルエン、キシレン等の芳香族炭化水素
類、テトラヒドロフラン、ジオキサン等の環状エーテル
類、メチルセロソルブ、エチルセロソルブ、プチルセロ
ソソルブ等のセロソルブ類、ジメチルホルムアミド、ジ
エチルホルムアミド等のホルムアミド類。Almost any organic solvent can be used in the method of the invention as long as it dissolves and is inert towards the alkoxide and copper complex. Specific examples include ester necks such as ethyl acetate and ethyl propionate, methyl alcohol,
Alcohols such as ethyl alcohol, rho- and 1so-propyl alcohol, n-, 1so-1sec- and tert-butyl alcohol, n-pentyl alcohol, 1so-amyl alcohol, hexyl alcohol, octyl alcohol, pentane, hexane, cyclohexane, Aliphatic saturated hydrocarbons such as methylcyclohexane, aromatic hydrocarbons such as benzene, toluene and xylene, cyclic ethers such as tetrahydrofuran and dioxane, cellosolves such as methyl cellosolve, ethyl cellosolve and butyl cellosolve, dimethyl formamide , formamides such as diethylformamide.
ジメチルスルホキシド、ジエチルスルホキシド等のスル
ホキシド類、等である。これらの溶媒は単独でも、また
は2種以上混合して使用することもできる。Sulfoxides such as dimethyl sulfoxide and diethyl sulfoxide, and the like. These solvents can be used alone or in combination of two or more.
溶媒は十分に乾燥し、二酸化炭素ガスを含まないものが
望ましい、使用する有機溶媒の量に限定はない。3成分
が反応させやすい濃度になる量で使用される。The solvent is preferably one that is sufficiently dry and does not contain carbon dioxide gas, and there is no limit to the amount of the organic solvent used. It is used in an amount that allows the three components to react easily.
有機溶媒組成物は基体に塗布する前に、十分均一にする
ために還流加熱してもよい。The organic solvent composition may be heated to reflux to ensure sufficient uniformity before application to the substrate.
本発明における紫外線および赤外線を照射する時の雰囲
気は、必要に応じて、真空、不活性ガス、酸素、空気、
亜酸化窒素等が使用される。In the present invention, the atmosphere when irradiating ultraviolet rays and infrared rays may be vacuum, inert gas, oxygen, air,
Nitrous oxide etc. are used.
ビスマスのアルコキシドとストロンチウムのアルコキシ
ドとカルシウムのアルコキシドと、銅の有機酸塩、β−
ジケトン錯体またはβ−ケトエステル錯体は、蒸留ある
いは再結晶等によって高純度化が可能であり、その組成
物中の金属元素比を有する複合酸化物を与える。本発明
方法によれば、高純度で目的組成に極めて一致した組成
の複合金属酸化物薄膜を、粉末を製造することなく、さ
らに高価な装置を使用することなく得ることが出来る。Bismuth alkoxide, strontium alkoxide, calcium alkoxide, copper organic acid salt, β-
A diketone complex or a β-ketoester complex can be purified to a high degree by distillation or recrystallization, and a complex oxide having a metal element ratio in its composition can be obtained. According to the method of the present invention, a composite metal oxide thin film with high purity and a composition that closely matches the target composition can be obtained without producing powder or using expensive equipment.
以下、本発明を実施例によって例示する。 The invention will now be illustrated by examples.
実施例1
ビスマス・トリイソプロポキシド81 (OCH(CL
)23319.3g、 ストロンチウム・ジイソプ
ロポキシドボキシドSr[0CH(CH3)z)z 1
0.28g、カルシウム・ジイソプロポキシドCa(O
CH(CH,)、)27.9gおよび銅アセチルアセト
ナートCu(CH3CQCHCOC)131.26.1
5gをイソプロパツール1ooOdに溶解し、イソプロ
パツールの沸点で3時間還流した後、この溶液を厚さ1
mm縦横3cmの酸化マグネシウムの板に塗布し。Example 1 Bismuth triisopropoxide 81 (OCH(CL)
) 23319.3g, Strontium diisopropoxide boxoxide Sr[0CH(CH3)z)z 1
0.28g, calcium diisopropoxide Ca(O
CH (CH, ), ) 27.9 g and copper acetylacetonate Cu (CH3CQCHCOC) 131.26.1
After dissolving 5 g of isopropanol in 1 oood of isopropanol and refluxing for 3 hours at the boiling point of isopropanol, the solution was diluted to a thickness of 1 ooOd.
Apply to a magnesium oxide plate measuring 3 cm in length and width.
空気中で乾燥した後、塗布面を上にして、深さが5cm
縦横20cmの通気できる石英製のチャンバーに入れ、
上から、紫外線源としての低圧水銀灯および赤外線ラン
プを同時に30分照射した。この板の表面を、xgマイ
クロアナライザーにより定量分析を行なったところ、B
i : Sr : Ca : Cu :○=1=1:1
:2:5.5であった。さらに、この薄膜の超電導転移
温度(以下Tcと表わす)を測定したところ756にで
あった。After drying in the air, apply it to a depth of 5 cm with the coated side facing up.
Place it in a ventilated quartz chamber measuring 20 cm in length and width.
A low-pressure mercury lamp and an infrared lamp as ultraviolet light sources were simultaneously irradiated from above for 30 minutes. When the surface of this plate was quantitatively analyzed using an xg microanalyzer, it was found that B
i: Sr: Ca: Cu: ○=1=1:1
:2:5.5. Furthermore, the superconducting transition temperature (hereinafter referred to as Tc) of this thin film was measured and found to be 756.
実施例2
ビスマス・トリエトキシドBi(QC,R5)、 17
.2g、ストロンチウム・ジェトキシド5r(OCJ、
) 8.88g、カルシウム・ジェトキシドCa(OC
2Hs)z 6.5gおよび2−エチルヘキサン酸鋼c
ucc4H,CHCC,H,)COO)。Example 2 Bismuth triethoxide Bi (QC, R5), 17
.. 2g, strontium jetoxide 5r (OCJ,
) 8.88g, Calcium Jetoxide Ca (OC
2Hs)z 6.5g and 2-ethylhexanoate steel c
ucc4H,CHCC,H,)COO).
34.99gをエタノール10100Oに溶解し、エタ
ノールの沸点で3時間還流加熱した後、この溶液を厚さ
1mm縦横3cmの酸化ジルコニウムの板に塗布し、空
気中で乾燥した後、塗布面を上にして、深さが5cm縦
横20cmの通気できる石英製のチャンバーに入れ、上
から、紫外g源としての低圧水銀灯および赤外線ランプ
を同時に1時間照射した。この板の表面を、X線マイク
ロアナライザーにより定量分析を行なったところ、Bi
: Sr : Ca : Cu :○=1=1 :
l :、2 :5.5であった。さらに、この薄膜のT
cを測定したところ78″′にであった。Dissolve 34.99 g in ethanol 10100O, heat under reflux for 3 hours at the boiling point of ethanol, then apply this solution to a zirconium oxide plate with a thickness of 1 mm and 3 cm in length and width. After drying in the air, turn the coated side upward. The sample was placed in a ventilated quartz chamber with a depth of 5 cm and a length and width of 20 cm, and was irradiated from above with a low-pressure mercury lamp as an ultraviolet g source and an infrared lamp at the same time for 1 hour. When the surface of this plate was quantitatively analyzed using an X-ray microanalyzer, it was found that Bi
: Sr : Ca : Cu :○=1=1 :
l:,2:5.5. Furthermore, the T of this thin film
When c was measured, it was 78''.
実施例3
ビスマス・トリイソプロポキシドBx (OCH(CH
3)2 )。Example 3 Bismuth triisopropoxide Bx (OCH(CH
3)2).
19.3g、ストロンチウム・ジェトキシドSr (O
Cz Hs )z8.88g、カルシウム・ジェトキシ
ドCa(OCH3)z5.1gおよび銅アセチルアセト
ナ−)’ Cu (CH3COCHCOCH,)。19.3g, strontium jetoxide Sr (O
Cz Hs )z 8.88 g, calcium jetoxide Ca (OCH3)z 5.1 g and copper acetylacetonate)' Cu (CH3COCHCOCH,).
26.15gをベンゼン1000dに溶解し、ベンゼン
の沸点で2時間還流加熱した後、この溶液を厚さ0.5
mm縦横3cmのシリコンウェハーに塗布し、空気中で
乾燥した後塗布面を上にして、深さが5cm縦横20c
mの通気できる石英製のチャンバーに入れ、酸素を流し
、上から、紫外線源としての低圧水銀灯および赤外線ラ
ンプを同時に2時間照射した。この板の表面を、X線マ
イクロアナライザーにより定量分析を行なったところ、
Bi : Sr : Ca : Cu : 0=1:1
:1:2:5,5であった。さらに、この薄膜のTcを
測定したところ76°にであった。After dissolving 26.15 g in 1000 d of benzene and heating under reflux for 2 hours at the boiling point of benzene, the solution was heated to a thickness of 0.5 g.
Coat it on a silicon wafer measuring 3 cm in length and width, and dry it in the air.
The sample was placed in a ventilated quartz chamber of 200 m in diameter, oxygen was supplied, and a low-pressure mercury lamp as an ultraviolet source and an infrared lamp were simultaneously irradiated from above for 2 hours. When the surface of this plate was quantitatively analyzed using an X-ray microanalyzer, we found that
Bi: Sr: Ca: Cu: 0=1:1
:1:2:5,5. Furthermore, when the Tc of this thin film was measured, it was 76°.
Claims (1)
キシドとカルシウムのアルコキシドと、銅の有機酸塩、
アルコキシド、β−ジケトン錯体またはβ−ケトエステ
ル錯体を目的とする複合金属酸化物の金属の割合と同じ
割合で金属を含むように混合して有機溶媒に溶解し、こ
の溶液を固体状の基体に塗布した状態で、紫外線および
赤外線を照射し、分解および酸化を行なわせることを特
徴とする複合金属酸化物薄膜の製造方法。1. Bismuth alkoxide, strontium alkoxide, calcium alkoxide, and organic acid salts of copper,
The alkoxide, β-diketone complex, or β-ketoester complex is mixed so that the metal is contained in the same proportion as the metal in the target composite metal oxide, dissolved in an organic solvent, and this solution is applied to a solid substrate. 1. A method for producing a composite metal oxide thin film, which comprises irradiating the composite metal oxide thin film with ultraviolet rays and infrared rays to cause decomposition and oxidation.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63143595A JPH01313329A (en) | 1988-06-13 | 1988-06-13 | Production of thin film of compound metal oxide |
DE89109185T DE68906303T2 (en) | 1988-05-23 | 1989-05-22 | Process for producing a metal oxide compound. |
EP89109185A EP0343568B1 (en) | 1988-05-23 | 1989-05-22 | Process for preparing compound metal oxide |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63143595A JPH01313329A (en) | 1988-06-13 | 1988-06-13 | Production of thin film of compound metal oxide |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH01313329A true JPH01313329A (en) | 1989-12-18 |
Family
ID=15342379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63143595A Pending JPH01313329A (en) | 1988-05-23 | 1988-06-13 | Production of thin film of compound metal oxide |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH01313329A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02118077A (en) * | 1988-10-27 | 1990-05-02 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of oxide molded body and oxide pattern formation |
JPH03283459A (en) * | 1990-03-30 | 1991-12-13 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH11315041A (en) * | 1998-02-12 | 1999-11-16 | Samsung Display Devices Co Ltd | Metal oxide precursor composition and its production |
US6542161B1 (en) | 1999-02-01 | 2003-04-01 | Sharp Kabushiki Kaisha | Character display apparatus, character display method, and recording medium |
-
1988
- 1988-06-13 JP JP63143595A patent/JPH01313329A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02118077A (en) * | 1988-10-27 | 1990-05-02 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of oxide molded body and oxide pattern formation |
JPH03283459A (en) * | 1990-03-30 | 1991-12-13 | Hitachi Ltd | Semiconductor integrated circuit device |
JPH11315041A (en) * | 1998-02-12 | 1999-11-16 | Samsung Display Devices Co Ltd | Metal oxide precursor composition and its production |
US6542161B1 (en) | 1999-02-01 | 2003-04-01 | Sharp Kabushiki Kaisha | Character display apparatus, character display method, and recording medium |
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