JPS63270313A - Composition for forming film and powder of metallic oxide of rare earth element - Google Patents
Composition for forming film and powder of metallic oxide of rare earth elementInfo
- Publication number
- JPS63270313A JPS63270313A JP62104489A JP10448987A JPS63270313A JP S63270313 A JPS63270313 A JP S63270313A JP 62104489 A JP62104489 A JP 62104489A JP 10448987 A JP10448987 A JP 10448987A JP S63270313 A JPS63270313 A JP S63270313A
- Authority
- JP
- Japan
- Prior art keywords
- rare earth
- earth element
- composition
- powder
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052761 rare earth metal Inorganic materials 0.000 title claims abstract description 29
- 239000000203 mixture Substances 0.000 title claims abstract description 18
- 239000000843 powder Substances 0.000 title claims abstract description 13
- 229910044991 metal oxide Inorganic materials 0.000 title description 4
- 239000003960 organic solvent Substances 0.000 claims abstract description 9
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 7
- 150000001875 compounds Chemical class 0.000 claims abstract description 4
- 239000013522 chelant Substances 0.000 claims abstract 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 17
- 238000000576 coating method Methods 0.000 abstract description 12
- 239000010409 thin film Substances 0.000 abstract description 12
- 239000000758 substrate Substances 0.000 abstract description 11
- 239000011248 coating agent Substances 0.000 abstract description 9
- 239000012298 atmosphere Substances 0.000 abstract description 3
- 239000003446 ligand Substances 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 12
- -1 dip Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 238000010304 firing Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 5
- 239000007983 Tris buffer Substances 0.000 description 5
- 150000004703 alkoxides Chemical class 0.000 description 5
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 5
- 238000005507 spraying Methods 0.000 description 5
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- 150000002910 rare earth metals Chemical class 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- DKGAVHZHDRPRBM-UHFFFAOYSA-N Tert-Butanol Chemical compound CC(C)(C)O DKGAVHZHDRPRBM-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium oxide Chemical compound O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 125000003158 alcohol group Chemical group 0.000 description 2
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- FKRCODPIKNYEAC-UHFFFAOYSA-N ethyl propionate Chemical compound CCOC(=O)CC FKRCODPIKNYEAC-UHFFFAOYSA-N 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- PHTQWCKDNZKARW-UHFFFAOYSA-N isoamylol Chemical compound CC(C)CCO PHTQWCKDNZKARW-UHFFFAOYSA-N 0.000 description 2
- ZXEKIIBDNHEJCQ-UHFFFAOYSA-N isobutanol Chemical compound CC(C)CO ZXEKIIBDNHEJCQ-UHFFFAOYSA-N 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002736 metal compounds Chemical class 0.000 description 2
- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- SUAKHGWARZSWIH-UHFFFAOYSA-N N,N‐diethylformamide Chemical compound CCN(CC)C=O SUAKHGWARZSWIH-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000004292 cyclic ethers Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- XYIBRDXRRQCHLP-UHFFFAOYSA-N ethyl acetoacetate Chemical compound CCOC(=O)CC(C)=O XYIBRDXRRQCHLP-UHFFFAOYSA-N 0.000 description 1
- 229910001940 europium oxide Inorganic materials 0.000 description 1
- AEBZCFFCDTZXHP-UHFFFAOYSA-N europium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Eu+3].[Eu+3] AEBZCFFCDTZXHP-UHFFFAOYSA-N 0.000 description 1
- 150000003948 formamides Chemical class 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 125000001183 hydrocarbyl group Chemical group 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229940035429 isobutyl alcohol Drugs 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000005474 octanoate group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 229910003451 terbium oxide Inorganic materials 0.000 description 1
- SCRZPWWVSXWCMC-UHFFFAOYSA-N terbium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[Tb+3].[Tb+3] SCRZPWWVSXWCMC-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
- C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
- C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
- C23C18/1208—Oxides, e.g. ceramics
- C23C18/1216—Metal oxides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Chemical Vapour Deposition (AREA)
- Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はガラス、金属、セラミックス、半導体、耐熱性
プラスチックス等の基板、チューブ、粉末、繊維、その
他種々の形状の物体の表面に希土類金属酸化物の膜を形
成し、また該酸化物の粉末を形成するための組成物に関
する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention applies rare earth metals to the surfaces of substrates such as glass, metals, ceramics, semiconductors, heat-resistant plastics, etc., tubes, powders, fibers, and other objects of various shapes. The present invention relates to a composition for forming an oxide film and for forming a powder of the oxide.
希土類金属酸化物は単体または他の金属酸化物との組合
せにより蛍光体、レーザー、紫外線吸収体、光学フィル
ター等、光学材料の分野での利用。Rare earth metal oxides are used alone or in combination with other metal oxides in the field of optical materials such as phosphors, lasers, ultraviolet absorbers, and optical filters.
サーミスター、バリスター、ガスセンサー、温度センサ
ー等の電子材料分野における電子工学用セラミックスと
しての利用、セラミックスの添加剤としての利用、その
他、超電導材料、クランキング等の触媒、自動車排気ガ
ス処理用触媒等、種々な分野での利用が検討されており
、基板チューブ、粉末、繊維、その他種々な形態の基体
表面に希土類金属酸化物薄膜を形成することにより、実
用面での新しい展開が期待できる。Use as ceramics for electronic engineering in the field of electronic materials such as thermistors, varistors, gas sensors, temperature sensors, etc., use as additives for ceramics, etc., superconducting materials, catalysts for cranking, etc., catalysts for automobile exhaust gas treatment. The use of rare earth metal oxides in various fields is being considered, and new practical developments can be expected by forming rare earth metal oxide thin films on the surfaces of substrate tubes, powders, fibers, and various other forms.
金属酸化物薄膜の一般的な形成方法としては、適当な蒸
気圧を有する金属化合物を原料とするCVD法、金属化
合物を含む溶液を、スプレー、ディッピング、スピンコ
ーティング等の方法により塗布し、それと同時又はその
後に焼成する塗布法、その他、PVD法、スパッタリン
グ等、減圧下での薄膜形成方法が知られているが、その
うち、常圧下でのCVD法を、スプレー法、ディッピン
グ法、又スピンコード法等の方法が、生産性において優
れている。General methods for forming metal oxide thin films include CVD using a metal compound with an appropriate vapor pressure as a raw material, applying a solution containing the metal compound by spraying, dipping, spin coating, etc. There are also known methods for forming thin films under reduced pressure, such as coating methods that involve subsequent baking, PVD methods, sputtering, etc. Among them, CVD methods under normal pressure are used as spray methods, dipping methods, and spin code methods. These methods are superior in terms of productivity.
希土類金属酸化物の薄膜を、スプレー、ディッピング、
スピンコーティング等と同時のまたは、それに続く焼成
による一般的な塗布焼成法で作成する試みとして、希土
類のオクタン酸塩、トリスアルコキシド等を用いること
が提案されているが、オクタン酸塩では、熱分解特性が
悪く、焼成後にカーボンが膜中に残り易く、また膜の基
板とのぬれ性等の問題から良質な希土類金属酸化物薄膜
を得ることが困難であった。また希土類のトリスアルコ
キシドを用いた場合は湿度に対する安定性が悪く、塗布
液中または未乾燥塗布膜中で不溶沈殿が生成し易く、往
々形成された膜が白濁し、均一透明な塗布膜を得にくか
った。Spray, dip, and spray thin films of rare earth metal oxides.
The use of rare earth octanoates, tris alkoxides, etc. has been proposed as an attempt to create the product using a general coating and firing method, which involves firing simultaneously with spin coating or subsequent firing. The properties are poor, carbon tends to remain in the film after firing, and it has been difficult to obtain a high quality rare earth metal oxide thin film due to problems such as the wettability of the film with the substrate. Furthermore, when rare earth tris alkoxide is used, it has poor stability against humidity, and insoluble precipitates are likely to form in the coating solution or in the undried coating film, and the formed film often becomes cloudy, resulting in a uniform and transparent coating film. It was difficult.
〔問題点の解決に係わる着眼点、知見〕本発明者らは、
有機溶剤に可溶な希土類化合物で、トリスアルコキシド
類よりも溶液安定性が優れ、オクタン酸塩類よりも低温
で分解可能な化合物として、希土類元素のβ−ジケトン
およびβ−ジケトエステル錯体を用いることに着目した
。[Points of view and knowledge related to solving problems] The present inventors
β-diketone and β-diketoester complexes of rare earth elements are used as rare earth compounds that are soluble in organic solvents, have better solution stability than tris alkoxides, and can be decomposed at lower temperatures than octoates. I paid attention.
これらの希土類化合物と有機溶媒からなる組成物は、溶
液の保管および通常の取り扱いにおける安定性、操作性
に優れ、基体への塗布と同時又は塗布後に加熱処理する
ことにより、均一かつ透明な希土類酸化物の薄膜が得ら
れる。These compositions consisting of rare earth compounds and organic solvents have excellent stability and operability during solution storage and normal handling, and can be heated to produce uniform and transparent rare earth oxidation at the same time as or after application to the substrate. A thin film of the substance is obtained.
本発明によれば一般式
%式%(1)
Mは少くとも1種の希土類元素であり、RはC1−1゜
のアルキル基であり、
Yは一般式
で表わされ、R1と82がC1−1アルキル基であり、
R3が水素またはCt−cアルキル基であるβ−ジケト
ン、または一般式
で表わされ、R1、R2、R3が上に定義した通りであ
るβ−ケトエステルから選ばれるキレート配位子であり
、
mとnはそれぞれ1または2の整数であり、かつm+n
=3である
化合物と、
有機溶媒
からなる希土類酸化物の膜と粉末を形成するための組成
物が提供される。According to the present invention, the general formula % formula % (1) M is at least one rare earth element, R is a C1-1° alkyl group, Y is represented by the general formula, and R1 and 82 are is a C1-1 alkyl group,
a chelating ligand selected from β-diketones in which R3 is hydrogen or a Ct-c alkyl group, or β-ketoesters of the general formula and in which R1, R2, R3 are as defined above, m and n are each an integer of 1 or 2, and m+n
Provided are compositions for forming rare earth oxide films and powders comprising:
本発明組成物において、希土類元素とはSc、Y、La
、 Ce、 Pr、 Nd、 Sm、Eu、 Gd、
Tb、 Dy、 Ho、 Er、Tm、 Yly、 L
uおよびその混合物である。これらの元素は化学的挙動
において酷似していて、混合化合物を生ずることはよく
知られている。In the composition of the present invention, rare earth elements include Sc, Y, and La.
, Ce, Pr, Nd, Sm, Eu, Gd,
Tb, Dy, Ho, Er, Tm, Yly, L
u and mixtures thereof. It is well known that these elements are very similar in chemical behavior and give rise to mixed compounds.
また金属のβ−ジケトンおよびβ−ジケトエステル鉗体
がほとんどあらゆる有機溶剤に溶解することはよく知ら
れている。It is also well known that metal β-diketones and β-diketoester strands are soluble in almost all organic solvents.
本発明の組成物中のβ−ジケトンまたはβ−ジケトエス
テル鉗体は希土類金属トリスアルコキシドをベンゼン、
トルエン等の芳香族炭化水素または、ペンタン、n−ヘ
キサン、オクタン等の炭化水素に溶解し、トリスアルコ
キシドと等モルのアセチルアセトン、アセト酢酸エチル
等のβ−ジケトンまたはβ−ケトエステルを加えて反応
させた後1反応により生成したアルコールと、使用した
溶剤を蒸留分離することにより得られる。このようにし
て得られた希土類化合物を有機溶剤に溶解することによ
り本発明の組成物を調製することができる。The β-diketone or β-diketoester forceps in the composition of the present invention combine rare earth metal tris alkoxide with benzene,
Dissolved in an aromatic hydrocarbon such as toluene or a hydrocarbon such as pentane, n-hexane, or octane, and reacted by adding an equimolar amount of a β-diketone or β-ketoester such as acetylacetone or ethyl acetoacetate to the tris alkoxide. It is obtained by distilling and separating the alcohol produced in the second reaction and the solvent used. The composition of the present invention can be prepared by dissolving the rare earth compound thus obtained in an organic solvent.
この目的に用いることのできる溶剤は、これらとする基
体の表面に対し親和性を有し、しがも塗布後に乾燥し易
い溶剤である。Solvents that can be used for this purpose are those that have an affinity for the surface of the substrate and are easily dryable after application.
このような溶剤としては、酢酸エチル、プロピオン酸エ
チル等のエステル類、メチルアルコール、エチルアルコ
ール、プロピルアルコール、イソプロピルアルコール、
ブチルアルコール、イソブチルアルコール、5ee−ブ
チルアルコール、tert−ブチルアルコール、n−ア
ミルアルコール、イソアミルアルコール、ヘキシルアル
コール、ペンチルアルコール、オクチルアルコール等、
一般式ROH(Rは炭素数1〜10の飽和ヒドロカルビ
ル基で表されるアルコール類、ヘキサン、ペンタン、シ
クロヘキサン、メチルシクロヘキサン等の飽和炭化水素
類、ベンゼン、トルエン、キシレン等の芳香族炭化水素
類、テトラヒドロフラン、ジオキサン、等の環状エーテ
ル類、メチルセロソルブ、エチルセロソルブ、ブチルセ
ロソルブ等のセロソルブ類、ジメチルホルムアミド、ジ
エチルホルムアミド等のホルムアミド類、ジメチルスル
ホキシド、ジエチルスルホキシド等スルホキシド類が挙
げられる。Such solvents include esters such as ethyl acetate and ethyl propionate, methyl alcohol, ethyl alcohol, propyl alcohol, isopropyl alcohol,
Butyl alcohol, isobutyl alcohol, 5ee-butyl alcohol, tert-butyl alcohol, n-amyl alcohol, isoamyl alcohol, hexyl alcohol, pentyl alcohol, octyl alcohol, etc.
General formula ROH (R is an alcohol represented by a saturated hydrocarbyl group having 1 to 10 carbon atoms; saturated hydrocarbons such as hexane, pentane, cyclohexane, and methylcyclohexane; aromatic hydrocarbons such as benzene, toluene, and xylene; Examples include cyclic ethers such as tetrahydrofuran and dioxane, cellosolves such as methyl cellosolve, ethyl cellosolve, and butyl cellosolve, formamides such as dimethylformamide and diethyl formamide, and sulfoxides such as dimethyl sulfoxide and diethyl sulfoxide.
これら溶剤は、単独で用いてもよく、又2種以上を混合
して用いることもできる。These solvents may be used alone or in combination of two or more.
本発明の希土類金属酸化物薄膜形成用組成物中における
希土類元素錯体の濃度は、金属酸化物に換質して0.1
wt%〜10wt%であることが望ましいが、塗布の方
法、塗布を行なう基体は、膜厚等に応じて適宜選択する
ことができる。The concentration of the rare earth element complex in the rare earth metal oxide thin film forming composition of the present invention is 0.1 after conversion to the metal oxide.
Although it is desirable that the amount is from wt% to 10wt%, the coating method and the substrate on which the coating is applied can be appropriately selected depending on the film thickness and the like.
本発明の組成物は基体に塗布し、塗布と同時またはその
後に焼成することによって希土類元素酸化物薄膜を与え
る。The composition of the present invention is applied to a substrate and fired at the same time as or after the application to provide a rare earth element oxide thin film.
塗布と同時に焼成するには、基体を焼成温度に加熱して
おいてその表面に錯体溶液をスプレー等によって適用す
ればよい。In order to bake simultaneously with coating, the substrate may be heated to a baking temperature and the complex solution may be applied to the surface by spraying or the like.
また組成物を加熱雰囲気中に噴霧することにより、希土
類元素酸化物の粉末を得ることもできる。Moreover, a rare earth element oxide powder can also be obtained by spraying the composition into a heated atmosphere.
焼成処理は170℃〜1000℃で10秒〜1時間程度
であり、190℃〜250℃の低温でも5〜30分程度
分径成により、十分に強固で密着性の良い非晶質の膜が
得られる。The firing process takes about 10 seconds to 1 hour at 170°C to 1000°C, and even at low temperatures of 190°C to 250°C, it takes about 5 to 30 minutes to form an amorphous film that is sufficiently strong and has good adhesion. can get.
焼成前に100℃〜250℃で乾燥してもよい。You may dry at 100 degreeC - 250 degreeC before baking.
本発明の希土類酸化物薄膜形成用組成物を用いる侍とに
より1次の効果が得られる。The first effect can be obtained by using the rare earth oxide thin film forming composition of the present invention.
1、塗布液に安定性があり、塗布工程での管理が容易で
ある。1. The coating liquid is stable and easy to control during the coating process.
2、均一性の高い透明な希土類酸化物の薄膜が得られる
。2. A transparent rare earth oxide thin film with high uniformity can be obtained.
3、本組成液を加熱スプレーすることにより。3. By heating and spraying this composition liquid.
粉末状希土類酸化物を得ることができる。Powdered rare earth oxides can be obtained.
実施例I
Nd (OC4H−)2 (CHs C0CI(COO
Ct L )を酸化ネオジウム換算濃度で0.3および
8Ilt%になるようにブタノールに溶解した溶液をパ
イレックス基板上に、スピ:/ml−ターにより300
0rpm15秒回転塗布した後、150℃15m1n乾
燥後、550℃で1時間焼成することにより、それぞれ
膜厚60および900人の透明な酸化ネオジウム膜を得
ることができた。Example I Nd(OC4H-)2(CHs C0CI(COO
A solution of Ct L ) dissolved in butanol to a neodymium oxide equivalent concentration of 0.3 and 8 Ilt% was placed on a Pyrex substrate at a rate of 300% using a spritzer/ml.
After spin coating at 0 rpm for 15 seconds, drying at 150° C. for 15 ml, and baking at 550° C. for 1 hour, transparent neodymium oxide films with film thicknesses of 60 and 900 thick, respectively, could be obtained.
実施例2
Sc (OCR(CH3)2 ) z (CH3COC
+(COCHl)を酸化スカンジウム換算濃度で0.5
および4w七%になるようにイソプロピルアルコールに
溶解した溶液を石英管にディップコーティングで塗布し
た後、250℃で30m1n乾燥後、1000℃で1時
間焼成することにより、透明な酸化スカンジウム膜を得
ることができた。Example 2 Sc (OCR(CH3)2 ) z (CH3COC
+(COCHl) as scandium oxide equivalent concentration 0.5
A transparent scandium oxide film is obtained by applying a solution dissolved in isopropyl alcohol to a concentration of 7% and 4w on a quartz tube by dip coating, drying for 30ml at 250°C, and baking at 1000°C for 1 hour. was completed.
実施例3
石英管内面に酸化イツトリウム、酸化スカンジウム、酸
化ネオジウム、酸化ユーロピウム、酸化テルビウム、酸
化ジスプロシウムの膜を形成するために、に(OCR(
CH)2 )2(CH,C0CHCOCH3) (ただ
し旧よY、 Sc、 Nd、 Eu、 Tb、 Dy)
を、それぞれ酸化物換算濃度で1wt%になるようにイ
ソプロピルアルコールに溶解した溶液を乾燥酸素または
、空気をキャリアーガスとし600℃に加熱した石英管
内にスプレーして壁面で熱分解させることによりそれぞ
れの希土類化合物に対応した酸化物の膜を石英管内面に
コーティングすることができた。Example 3 In order to form a film of yttrium oxide, scandium oxide, neodymium oxide, europium oxide, terbium oxide, and dysprosium oxide on the inner surface of a quartz tube,
CH)2)2(CH,C0CHCOCH3) (However, the old Y, Sc, Nd, Eu, Tb, Dy)
were dissolved in isopropyl alcohol to a concentration of 1 wt% in terms of oxide, and sprayed into a quartz tube heated to 600°C using dry oxygen or air as a carrier gas, and thermally decomposed on the wall surface. We were able to coat the inner surface of a quartz tube with an oxide film compatible with rare earth compounds.
また、さらにスプレーを続けることにより、粉状希土類
酸化物を得た。Further, by continuing spraying, a powdered rare earth oxide was obtained.
実施例4
0.1および0.5μの粒径を持つ酸化チタン、酸化ジ
ルコニウム粉末を、M (OC48s ) 2 (CH
3coctlcoc)l、 ) −(ただし、HはY、
La、 Ce、 Tb、 Dy、 ’i’b)をそれ
ぞれ酸化物換算濃度で、2wt%になるようにイソプロ
ピルアルコールに溶解した溶液に浸漬、攪拌した後、濾
過し、100℃で30分乾燥後、7oo℃で1時間焼成
することにより、それぞれの希土類化合物に対応した酸
化物で表面を覆った酸化チンタン、酸化ジルコニウムの
粉末が得られた。Example 4 M (OC48s) 2 (CH
3coctlcoc)l, ) -(H is Y,
After immersing and stirring a solution in which La, Ce, Tb, Dy, 'i'b) were dissolved in isopropyl alcohol at a concentration of 2 wt% in terms of oxide, it was filtered and dried at 100 °C for 30 minutes. By firing at 70° C. for 1 hour, titanium oxide and zirconium oxide powders whose surfaces were covered with oxides corresponding to the respective rare earth compounds were obtained.
実施例5〜25.比較例1〜17
表1に記した希土類化合物の有機溶剤溶液をそれぞれ、
パイレックス基板上に、スピンコーターにより3000
rpm、15秒回転塗布した後、150’C15m1n
乾燥後、550℃で1時間焼成することにより、それぞ
れの希土類化合物に対応した酸化物被膜が得られた。Examples 5-25. Comparative Examples 1 to 17 Each of the organic solvent solutions of rare earth compounds listed in Table 1 was
3000 on a Pyrex substrate using a spin coater.
rpm, after spinning for 15 seconds, 150'C15m1n
After drying, oxide films corresponding to each rare earth compound were obtained by firing at 550° C. for 1 hour.
実施例26
表1に記した希土類化合物の5%濃度の有機溶剤溶液を
それぞれ酸化雰囲気下で700”Cに加熱した管状炉中
に松露して熱分解することにより1粒径0.5μ〜3μ
の希土類酸化物粉末を得た。Example 26 A 5% organic solvent solution of the rare earth compounds listed in Table 1 was pyrolyzed in a tubular furnace heated to 700"C under an oxidizing atmosphere to obtain particles with a particle size of 0.5 to 3 microns.
A rare earth oxide powder was obtained.
手続補正書
昭和62年6月2日
特許庁長官 黒 1)明 雄 殿
1、事件の表示
昭和62年 特 許 願 第104489号2、発明の
名称
希土類金属酸化物の膜と粉末を形成するための組成物3
、補正をする者
事件との関係 特許出願人
名称(626)三菱金属株式会社
4、代理人(〒164)
住 所 東京都中野区本町1丁目31番4号5、補正指
令の日付 自発
6、補正により増加する発明の数 なし7、補正の対象
明細書の発明の詳細な説明の欄8、補正の内容 別紙
のとおり
補正の内容
明細書14頁の表1を次のように訂正する。Procedural Amendment June 2, 1988 Commissioner of the Patent Office Black 1) Mr. Akio 1, Indication of Case 1988 Patent Application No. 104489 2, Title of Invention For forming rare earth metal oxide films and powders Composition 3 of
, Relationship to the case of the person making the amendment Patent applicant name (626) Mitsubishi Metals Co., Ltd. 4, Agent (164) Address 1-31-4-5 Honmachi, Nakano-ku, Tokyo Date of amendment order Voluntary 6; Number of inventions increased by amendment None 7, Subject of amendment Detailed explanation of the invention in the specification column 8, Contents of the amendment Table 1 on page 14 of the detailed description of the amendment is corrected as shown in the attached sheet.
Claims (1)
式 ▲数式、化学式、表等があります▼(II) で表わされ、R^1とR^2がC_1_−_6アルキル
基であり、R^3が水素またはC_1_−_6アルキル
基であるβ−ジケトン、または一般式 ▲数式、化学式、表等があります▼(III) で表わされ、R^1、R^2、R^3が上に定義した通
りであるβ−ケトエステルから選ばれるキレート配位子
であり、 mとnはそれぞれ1または2の整数であり、かつm+n
=3である 化合物と、 有機溶媒 からなる希土類酸化物の膜と粉末を形成するための組成
物。[Claims] 1. Represented by the general formula M(OR)_mY_n(I), M is at least one rare earth element, R is an alkyl group of C_1_-_1_0, and Y is represented by the general formula ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (II) β-diketones represented by , where R^1 and R^2 are C_1_-_6 alkyl groups, and R^3 is hydrogen or C_1_-_6 alkyl groups , or a chelate coordination chosen from β-keto esters represented by the general formula ▲ mathematical formula, chemical formula, table, etc. ▼ (III) and where R^1, R^2, R^3 are as defined above child, m and n are each an integer of 1 or 2, and m+n
A composition for forming a film and powder of a rare earth oxide, which comprises a compound in which =3 and an organic solvent.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62104489A JPS63270313A (en) | 1987-04-30 | 1987-04-30 | Composition for forming film and powder of metallic oxide of rare earth element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62104489A JPS63270313A (en) | 1987-04-30 | 1987-04-30 | Composition for forming film and powder of metallic oxide of rare earth element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63270313A true JPS63270313A (en) | 1988-11-08 |
Family
ID=14381956
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62104489A Pending JPS63270313A (en) | 1987-04-30 | 1987-04-30 | Composition for forming film and powder of metallic oxide of rare earth element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63270313A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0474866A (en) * | 1990-07-13 | 1992-03-10 | Dowa Mining Co Ltd | Production of thin film using 1,3-diketone type organometallic complex |
US6069237A (en) * | 1995-09-11 | 2000-05-30 | Montell Technology Company Bv | Open-pentadienyl metallocenen ligands, polymerization catalysts/catalyst precursors and polymers therefrom |
US6160072A (en) * | 1997-05-02 | 2000-12-12 | Ewen; John A. | Process for polymerizing tactioselective polyolefins in condensed phase using titanocenes |
US6180732B1 (en) | 1993-09-24 | 2001-01-30 | John A. Ewen | Stereospecific metallocene catalysts with stereolocking α-cp substituents |
JP2007238394A (en) * | 2006-03-09 | 2007-09-20 | Dainippon Printing Co Ltd | Method and apparatus for producing metal oxide film |
EP2017253A1 (en) * | 2007-07-19 | 2009-01-21 | UMC Utrecht Holding B.V. | A particle comprising an organic lanthanide metal complex |
-
1987
- 1987-04-30 JP JP62104489A patent/JPS63270313A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0474866A (en) * | 1990-07-13 | 1992-03-10 | Dowa Mining Co Ltd | Production of thin film using 1,3-diketone type organometallic complex |
US6180732B1 (en) | 1993-09-24 | 2001-01-30 | John A. Ewen | Stereospecific metallocene catalysts with stereolocking α-cp substituents |
US6069237A (en) * | 1995-09-11 | 2000-05-30 | Montell Technology Company Bv | Open-pentadienyl metallocenen ligands, polymerization catalysts/catalyst precursors and polymers therefrom |
US6160072A (en) * | 1997-05-02 | 2000-12-12 | Ewen; John A. | Process for polymerizing tactioselective polyolefins in condensed phase using titanocenes |
JP2007238394A (en) * | 2006-03-09 | 2007-09-20 | Dainippon Printing Co Ltd | Method and apparatus for producing metal oxide film |
EP2017253A1 (en) * | 2007-07-19 | 2009-01-21 | UMC Utrecht Holding B.V. | A particle comprising an organic lanthanide metal complex |
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