JPS63270313A - Composition for forming film and powder of metallic oxide of rare earth element - Google Patents

Composition for forming film and powder of metallic oxide of rare earth element

Info

Publication number
JPS63270313A
JPS63270313A JP62104489A JP10448987A JPS63270313A JP S63270313 A JPS63270313 A JP S63270313A JP 62104489 A JP62104489 A JP 62104489A JP 10448987 A JP10448987 A JP 10448987A JP S63270313 A JPS63270313 A JP S63270313A
Authority
JP
Japan
Prior art keywords
rare earth
earth element
composition
powder
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62104489A
Other languages
Japanese (ja)
Inventor
Makoto Tsunashima
綱島 真
Hiroto Uchida
寛人 内田
Akihiko Saegusa
明彦 三枝
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP62104489A priority Critical patent/JPS63270313A/en
Publication of JPS63270313A publication Critical patent/JPS63270313A/en
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C23C18/1208Oxides, e.g. ceramics
    • C23C18/1216Metal oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)

Abstract

PURPOSE:To improve stability of a coating solution and to enable formation of a transparent thin film having high uniformity and powder, by using a beta- diketone and a beta-diketoester of rare earth element as a rare earth element compound soluble in an organic solvent. CONSTITUTION:A composition to form a film and powder of the rare earth element oxide consists of a compound of rare earth element shown by general formula of formula I and an organic solvent. In the formula I, M is one or more rare earth element, R is 1-10C alkyl, Y is chelate ligand selected from a beta-diketone and a beta-diketoester of rare earth element shown by general formulas of formula II and formula III, m and n are 1 or 2 integer, respectively and m+n=3. In the formulas II and III, R<1> and R<2> are 1-6C alkyl, R<3> is H or 1-6C alkyl. The composition is applied to a substrate, calcined simultaneously or after coating to give a thin film of rare earth element oxide or the composition is sprayed in a hot atmosphere to give powder of rare earth element oxide.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はガラス、金属、セラミックス、半導体、耐熱性
プラスチックス等の基板、チューブ、粉末、繊維、その
他種々の形状の物体の表面に希土類金属酸化物の膜を形
成し、また該酸化物の粉末を形成するための組成物に関
する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention applies rare earth metals to the surfaces of substrates such as glass, metals, ceramics, semiconductors, heat-resistant plastics, etc., tubes, powders, fibers, and other objects of various shapes. The present invention relates to a composition for forming an oxide film and for forming a powder of the oxide.

希土類金属酸化物は単体または他の金属酸化物との組合
せにより蛍光体、レーザー、紫外線吸収体、光学フィル
ター等、光学材料の分野での利用。
Rare earth metal oxides are used alone or in combination with other metal oxides in the field of optical materials such as phosphors, lasers, ultraviolet absorbers, and optical filters.

サーミスター、バリスター、ガスセンサー、温度センサ
ー等の電子材料分野における電子工学用セラミックスと
しての利用、セラミックスの添加剤としての利用、その
他、超電導材料、クランキング等の触媒、自動車排気ガ
ス処理用触媒等、種々な分野での利用が検討されており
、基板チューブ、粉末、繊維、その他種々な形態の基体
表面に希土類金属酸化物薄膜を形成することにより、実
用面での新しい展開が期待できる。
Use as ceramics for electronic engineering in the field of electronic materials such as thermistors, varistors, gas sensors, temperature sensors, etc., use as additives for ceramics, etc., superconducting materials, catalysts for cranking, etc., catalysts for automobile exhaust gas treatment. The use of rare earth metal oxides in various fields is being considered, and new practical developments can be expected by forming rare earth metal oxide thin films on the surfaces of substrate tubes, powders, fibers, and various other forms.

〔従来技術とその問題点〕[Prior art and its problems]

金属酸化物薄膜の一般的な形成方法としては、適当な蒸
気圧を有する金属化合物を原料とするCVD法、金属化
合物を含む溶液を、スプレー、ディッピング、スピンコ
ーティング等の方法により塗布し、それと同時又はその
後に焼成する塗布法、その他、PVD法、スパッタリン
グ等、減圧下での薄膜形成方法が知られているが、その
うち、常圧下でのCVD法を、スプレー法、ディッピン
グ法、又スピンコード法等の方法が、生産性において優
れている。
General methods for forming metal oxide thin films include CVD using a metal compound with an appropriate vapor pressure as a raw material, applying a solution containing the metal compound by spraying, dipping, spin coating, etc. There are also known methods for forming thin films under reduced pressure, such as coating methods that involve subsequent baking, PVD methods, sputtering, etc. Among them, CVD methods under normal pressure are used as spray methods, dipping methods, and spin code methods. These methods are superior in terms of productivity.

希土類金属酸化物の薄膜を、スプレー、ディッピング、
スピンコーティング等と同時のまたは、それに続く焼成
による一般的な塗布焼成法で作成する試みとして、希土
類のオクタン酸塩、トリスアルコキシド等を用いること
が提案されているが、オクタン酸塩では、熱分解特性が
悪く、焼成後にカーボンが膜中に残り易く、また膜の基
板とのぬれ性等の問題から良質な希土類金属酸化物薄膜
を得ることが困難であった。また希土類のトリスアルコ
キシドを用いた場合は湿度に対する安定性が悪く、塗布
液中または未乾燥塗布膜中で不溶沈殿が生成し易く、往
々形成された膜が白濁し、均一透明な塗布膜を得にくか
った。
Spray, dip, and spray thin films of rare earth metal oxides.
The use of rare earth octanoates, tris alkoxides, etc. has been proposed as an attempt to create the product using a general coating and firing method, which involves firing simultaneously with spin coating or subsequent firing. The properties are poor, carbon tends to remain in the film after firing, and it has been difficult to obtain a high quality rare earth metal oxide thin film due to problems such as the wettability of the film with the substrate. Furthermore, when rare earth tris alkoxide is used, it has poor stability against humidity, and insoluble precipitates are likely to form in the coating solution or in the undried coating film, and the formed film often becomes cloudy, resulting in a uniform and transparent coating film. It was difficult.

〔問題点の解決に係わる着眼点、知見〕本発明者らは、
有機溶剤に可溶な希土類化合物で、トリスアルコキシド
類よりも溶液安定性が優れ、オクタン酸塩類よりも低温
で分解可能な化合物として、希土類元素のβ−ジケトン
およびβ−ジケトエステル錯体を用いることに着目した
[Points of view and knowledge related to solving problems] The present inventors
β-diketone and β-diketoester complexes of rare earth elements are used as rare earth compounds that are soluble in organic solvents, have better solution stability than tris alkoxides, and can be decomposed at lower temperatures than octoates. I paid attention.

〔問題解決の手段〕[Means of problem solving]

これらの希土類化合物と有機溶媒からなる組成物は、溶
液の保管および通常の取り扱いにおける安定性、操作性
に優れ、基体への塗布と同時又は塗布後に加熱処理する
ことにより、均一かつ透明な希土類酸化物の薄膜が得ら
れる。
These compositions consisting of rare earth compounds and organic solvents have excellent stability and operability during solution storage and normal handling, and can be heated to produce uniform and transparent rare earth oxidation at the same time as or after application to the substrate. A thin film of the substance is obtained.

〔発明の構成〕[Structure of the invention]

本発明によれば一般式 %式%(1) Mは少くとも1種の希土類元素であり、RはC1−1゜
のアルキル基であり、 Yは一般式 で表わされ、R1と82がC1−1アルキル基であり、
R3が水素またはCt−cアルキル基であるβ−ジケト
ン、または一般式 で表わされ、R1、R2、R3が上に定義した通りであ
るβ−ケトエステルから選ばれるキレート配位子であり
、 mとnはそれぞれ1または2の整数であり、かつm+n
=3である 化合物と、 有機溶媒 からなる希土類酸化物の膜と粉末を形成するための組成
物が提供される。
According to the present invention, the general formula % formula % (1) M is at least one rare earth element, R is a C1-1° alkyl group, Y is represented by the general formula, and R1 and 82 are is a C1-1 alkyl group,
a chelating ligand selected from β-diketones in which R3 is hydrogen or a Ct-c alkyl group, or β-ketoesters of the general formula and in which R1, R2, R3 are as defined above, m and n are each an integer of 1 or 2, and m+n
Provided are compositions for forming rare earth oxide films and powders comprising:

本発明組成物において、希土類元素とはSc、Y、La
、 Ce、 Pr、 Nd、 Sm、Eu、 Gd、 
Tb、 Dy、 Ho、 Er、Tm、 Yly、 L
uおよびその混合物である。これらの元素は化学的挙動
において酷似していて、混合化合物を生ずることはよく
知られている。
In the composition of the present invention, rare earth elements include Sc, Y, and La.
, Ce, Pr, Nd, Sm, Eu, Gd,
Tb, Dy, Ho, Er, Tm, Yly, L
u and mixtures thereof. It is well known that these elements are very similar in chemical behavior and give rise to mixed compounds.

また金属のβ−ジケトンおよびβ−ジケトエステル鉗体
がほとんどあらゆる有機溶剤に溶解することはよく知ら
れている。
It is also well known that metal β-diketones and β-diketoester strands are soluble in almost all organic solvents.

本発明の組成物中のβ−ジケトンまたはβ−ジケトエス
テル鉗体は希土類金属トリスアルコキシドをベンゼン、
トルエン等の芳香族炭化水素または、ペンタン、n−ヘ
キサン、オクタン等の炭化水素に溶解し、トリスアルコ
キシドと等モルのアセチルアセトン、アセト酢酸エチル
等のβ−ジケトンまたはβ−ケトエステルを加えて反応
させた後1反応により生成したアルコールと、使用した
溶剤を蒸留分離することにより得られる。このようにし
て得られた希土類化合物を有機溶剤に溶解することによ
り本発明の組成物を調製することができる。
The β-diketone or β-diketoester forceps in the composition of the present invention combine rare earth metal tris alkoxide with benzene,
Dissolved in an aromatic hydrocarbon such as toluene or a hydrocarbon such as pentane, n-hexane, or octane, and reacted by adding an equimolar amount of a β-diketone or β-ketoester such as acetylacetone or ethyl acetoacetate to the tris alkoxide. It is obtained by distilling and separating the alcohol produced in the second reaction and the solvent used. The composition of the present invention can be prepared by dissolving the rare earth compound thus obtained in an organic solvent.

この目的に用いることのできる溶剤は、これらとする基
体の表面に対し親和性を有し、しがも塗布後に乾燥し易
い溶剤である。
Solvents that can be used for this purpose are those that have an affinity for the surface of the substrate and are easily dryable after application.

このような溶剤としては、酢酸エチル、プロピオン酸エ
チル等のエステル類、メチルアルコール、エチルアルコ
ール、プロピルアルコール、イソプロピルアルコール、
ブチルアルコール、イソブチルアルコール、5ee−ブ
チルアルコール、tert−ブチルアルコール、n−ア
ミルアルコール、イソアミルアルコール、ヘキシルアル
コール、ペンチルアルコール、オクチルアルコール等、
一般式ROH(Rは炭素数1〜10の飽和ヒドロカルビ
ル基で表されるアルコール類、ヘキサン、ペンタン、シ
クロヘキサン、メチルシクロヘキサン等の飽和炭化水素
類、ベンゼン、トルエン、キシレン等の芳香族炭化水素
類、テトラヒドロフラン、ジオキサン、等の環状エーテ
ル類、メチルセロソルブ、エチルセロソルブ、ブチルセ
ロソルブ等のセロソルブ類、ジメチルホルムアミド、ジ
エチルホルムアミド等のホルムアミド類、ジメチルスル
ホキシド、ジエチルスルホキシド等スルホキシド類が挙
げられる。
Such solvents include esters such as ethyl acetate and ethyl propionate, methyl alcohol, ethyl alcohol, propyl alcohol, isopropyl alcohol,
Butyl alcohol, isobutyl alcohol, 5ee-butyl alcohol, tert-butyl alcohol, n-amyl alcohol, isoamyl alcohol, hexyl alcohol, pentyl alcohol, octyl alcohol, etc.
General formula ROH (R is an alcohol represented by a saturated hydrocarbyl group having 1 to 10 carbon atoms; saturated hydrocarbons such as hexane, pentane, cyclohexane, and methylcyclohexane; aromatic hydrocarbons such as benzene, toluene, and xylene; Examples include cyclic ethers such as tetrahydrofuran and dioxane, cellosolves such as methyl cellosolve, ethyl cellosolve, and butyl cellosolve, formamides such as dimethylformamide and diethyl formamide, and sulfoxides such as dimethyl sulfoxide and diethyl sulfoxide.

これら溶剤は、単独で用いてもよく、又2種以上を混合
して用いることもできる。
These solvents may be used alone or in combination of two or more.

本発明の希土類金属酸化物薄膜形成用組成物中における
希土類元素錯体の濃度は、金属酸化物に換質して0.1
wt%〜10wt%であることが望ましいが、塗布の方
法、塗布を行なう基体は、膜厚等に応じて適宜選択する
ことができる。
The concentration of the rare earth element complex in the rare earth metal oxide thin film forming composition of the present invention is 0.1 after conversion to the metal oxide.
Although it is desirable that the amount is from wt% to 10wt%, the coating method and the substrate on which the coating is applied can be appropriately selected depending on the film thickness and the like.

本発明の組成物は基体に塗布し、塗布と同時またはその
後に焼成することによって希土類元素酸化物薄膜を与え
る。
The composition of the present invention is applied to a substrate and fired at the same time as or after the application to provide a rare earth element oxide thin film.

塗布と同時に焼成するには、基体を焼成温度に加熱して
おいてその表面に錯体溶液をスプレー等によって適用す
ればよい。
In order to bake simultaneously with coating, the substrate may be heated to a baking temperature and the complex solution may be applied to the surface by spraying or the like.

また組成物を加熱雰囲気中に噴霧することにより、希土
類元素酸化物の粉末を得ることもできる。
Moreover, a rare earth element oxide powder can also be obtained by spraying the composition into a heated atmosphere.

焼成処理は170℃〜1000℃で10秒〜1時間程度
であり、190℃〜250℃の低温でも5〜30分程度
分径成により、十分に強固で密着性の良い非晶質の膜が
得られる。
The firing process takes about 10 seconds to 1 hour at 170°C to 1000°C, and even at low temperatures of 190°C to 250°C, it takes about 5 to 30 minutes to form an amorphous film that is sufficiently strong and has good adhesion. can get.

焼成前に100℃〜250℃で乾燥してもよい。You may dry at 100 degreeC - 250 degreeC before baking.

〔発明の効果〕〔Effect of the invention〕

本発明の希土類酸化物薄膜形成用組成物を用いる侍とに
より1次の効果が得られる。
The first effect can be obtained by using the rare earth oxide thin film forming composition of the present invention.

1、塗布液に安定性があり、塗布工程での管理が容易で
ある。
1. The coating liquid is stable and easy to control during the coating process.

2、均一性の高い透明な希土類酸化物の薄膜が得られる
2. A transparent rare earth oxide thin film with high uniformity can be obtained.

3、本組成液を加熱スプレーすることにより。3. By heating and spraying this composition liquid.

粉末状希土類酸化物を得ることができる。Powdered rare earth oxides can be obtained.

〔実施態様〕[Embodiment]

実施例I Nd (OC4H−)2 (CHs C0CI(COO
Ct L )を酸化ネオジウム換算濃度で0.3および
8Ilt%になるようにブタノールに溶解した溶液をパ
イレックス基板上に、スピ:/ml−ターにより300
0rpm15秒回転塗布した後、150℃15m1n乾
燥後、550℃で1時間焼成することにより、それぞれ
膜厚60および900人の透明な酸化ネオジウム膜を得
ることができた。
Example I Nd(OC4H-)2(CHs C0CI(COO
A solution of Ct L ) dissolved in butanol to a neodymium oxide equivalent concentration of 0.3 and 8 Ilt% was placed on a Pyrex substrate at a rate of 300% using a spritzer/ml.
After spin coating at 0 rpm for 15 seconds, drying at 150° C. for 15 ml, and baking at 550° C. for 1 hour, transparent neodymium oxide films with film thicknesses of 60 and 900 thick, respectively, could be obtained.

実施例2 Sc (OCR(CH3)2 ) z (CH3COC
+(COCHl)を酸化スカンジウム換算濃度で0.5
および4w七%になるようにイソプロピルアルコールに
溶解した溶液を石英管にディップコーティングで塗布し
た後、250℃で30m1n乾燥後、1000℃で1時
間焼成することにより、透明な酸化スカンジウム膜を得
ることができた。
Example 2 Sc (OCR(CH3)2 ) z (CH3COC
+(COCHl) as scandium oxide equivalent concentration 0.5
A transparent scandium oxide film is obtained by applying a solution dissolved in isopropyl alcohol to a concentration of 7% and 4w on a quartz tube by dip coating, drying for 30ml at 250°C, and baking at 1000°C for 1 hour. was completed.

実施例3 石英管内面に酸化イツトリウム、酸化スカンジウム、酸
化ネオジウム、酸化ユーロピウム、酸化テルビウム、酸
化ジスプロシウムの膜を形成するために、に(OCR(
CH)2 )2(CH,C0CHCOCH3) (ただ
し旧よY、 Sc、 Nd、 Eu、 Tb、 Dy)
を、それぞれ酸化物換算濃度で1wt%になるようにイ
ソプロピルアルコールに溶解した溶液を乾燥酸素または
、空気をキャリアーガスとし600℃に加熱した石英管
内にスプレーして壁面で熱分解させることによりそれぞ
れの希土類化合物に対応した酸化物の膜を石英管内面に
コーティングすることができた。
Example 3 In order to form a film of yttrium oxide, scandium oxide, neodymium oxide, europium oxide, terbium oxide, and dysprosium oxide on the inner surface of a quartz tube,
CH)2)2(CH,C0CHCOCH3) (However, the old Y, Sc, Nd, Eu, Tb, Dy)
were dissolved in isopropyl alcohol to a concentration of 1 wt% in terms of oxide, and sprayed into a quartz tube heated to 600°C using dry oxygen or air as a carrier gas, and thermally decomposed on the wall surface. We were able to coat the inner surface of a quartz tube with an oxide film compatible with rare earth compounds.

また、さらにスプレーを続けることにより、粉状希土類
酸化物を得た。
Further, by continuing spraying, a powdered rare earth oxide was obtained.

実施例4 0.1および0.5μの粒径を持つ酸化チタン、酸化ジ
ルコニウム粉末を、M (OC48s ) 2 (CH
3coctlcoc)l、 ) −(ただし、HはY、
 La、 Ce、 Tb、 Dy、 ’i’b)をそれ
ぞれ酸化物換算濃度で、2wt%になるようにイソプロ
ピルアルコールに溶解した溶液に浸漬、攪拌した後、濾
過し、100℃で30分乾燥後、7oo℃で1時間焼成
することにより、それぞれの希土類化合物に対応した酸
化物で表面を覆った酸化チンタン、酸化ジルコニウムの
粉末が得られた。
Example 4 M (OC48s) 2 (CH
3coctlcoc)l, ) -(H is Y,
After immersing and stirring a solution in which La, Ce, Tb, Dy, 'i'b) were dissolved in isopropyl alcohol at a concentration of 2 wt% in terms of oxide, it was filtered and dried at 100 °C for 30 minutes. By firing at 70° C. for 1 hour, titanium oxide and zirconium oxide powders whose surfaces were covered with oxides corresponding to the respective rare earth compounds were obtained.

実施例5〜25.比較例1〜17 表1に記した希土類化合物の有機溶剤溶液をそれぞれ、
パイレックス基板上に、スピンコーターにより3000
rpm、15秒回転塗布した後、150’C15m1n
乾燥後、550℃で1時間焼成することにより、それぞ
れの希土類化合物に対応した酸化物被膜が得られた。
Examples 5-25. Comparative Examples 1 to 17 Each of the organic solvent solutions of rare earth compounds listed in Table 1 was
3000 on a Pyrex substrate using a spin coater.
rpm, after spinning for 15 seconds, 150'C15m1n
After drying, oxide films corresponding to each rare earth compound were obtained by firing at 550° C. for 1 hour.

実施例26 表1に記した希土類化合物の5%濃度の有機溶剤溶液を
それぞれ酸化雰囲気下で700”Cに加熱した管状炉中
に松露して熱分解することにより1粒径0.5μ〜3μ
の希土類酸化物粉末を得た。
Example 26 A 5% organic solvent solution of the rare earth compounds listed in Table 1 was pyrolyzed in a tubular furnace heated to 700"C under an oxidizing atmosphere to obtain particles with a particle size of 0.5 to 3 microns.
A rare earth oxide powder was obtained.

手続補正書 昭和62年6月2日 特許庁長官 黒 1)明 雄 殿 1、事件の表示 昭和62年 特 許 願 第104489号2、発明の
名称 希土類金属酸化物の膜と粉末を形成するための組成物3
、補正をする者 事件との関係  特許出願人 名称(626)三菱金属株式会社 4、代理人(〒164) 住 所 東京都中野区本町1丁目31番4号5、補正指
令の日付 自発 6、補正により増加する発明の数 なし7、補正の対象
 明細書の発明の詳細な説明の欄8、補正の内容 別紙
のとおり 補正の内容 明細書14頁の表1を次のように訂正する。
Procedural Amendment June 2, 1988 Commissioner of the Patent Office Black 1) Mr. Akio 1, Indication of Case 1988 Patent Application No. 104489 2, Title of Invention For forming rare earth metal oxide films and powders Composition 3 of
, Relationship to the case of the person making the amendment Patent applicant name (626) Mitsubishi Metals Co., Ltd. 4, Agent (164) Address 1-31-4-5 Honmachi, Nakano-ku, Tokyo Date of amendment order Voluntary 6; Number of inventions increased by amendment None 7, Subject of amendment Detailed explanation of the invention in the specification column 8, Contents of the amendment Table 1 on page 14 of the detailed description of the amendment is corrected as shown in the attached sheet.

Claims (1)

【特許請求の範囲】 1、一般式 M(OR)_mY_n( I ) で表わされ、 Mは少くとも1種の希土類元素であり、 RはC_1_−_1_0のアルキル基であり、Yは一般
式 ▲数式、化学式、表等があります▼(II) で表わされ、R^1とR^2がC_1_−_6アルキル
基であり、R^3が水素またはC_1_−_6アルキル
基であるβ−ジケトン、または一般式 ▲数式、化学式、表等があります▼(III) で表わされ、R^1、R^2、R^3が上に定義した通
りであるβ−ケトエステルから選ばれるキレート配位子
であり、 mとnはそれぞれ1または2の整数であり、かつm+n
=3である 化合物と、 有機溶媒 からなる希土類酸化物の膜と粉末を形成するための組成
物。
[Claims] 1. Represented by the general formula M(OR)_mY_n(I), M is at least one rare earth element, R is an alkyl group of C_1_-_1_0, and Y is represented by the general formula ▲There are mathematical formulas, chemical formulas, tables, etc.▼ (II) β-diketones represented by , where R^1 and R^2 are C_1_-_6 alkyl groups, and R^3 is hydrogen or C_1_-_6 alkyl groups , or a chelate coordination chosen from β-keto esters represented by the general formula ▲ mathematical formula, chemical formula, table, etc. ▼ (III) and where R^1, R^2, R^3 are as defined above child, m and n are each an integer of 1 or 2, and m+n
A composition for forming a film and powder of a rare earth oxide, which comprises a compound in which =3 and an organic solvent.
JP62104489A 1987-04-30 1987-04-30 Composition for forming film and powder of metallic oxide of rare earth element Pending JPS63270313A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62104489A JPS63270313A (en) 1987-04-30 1987-04-30 Composition for forming film and powder of metallic oxide of rare earth element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62104489A JPS63270313A (en) 1987-04-30 1987-04-30 Composition for forming film and powder of metallic oxide of rare earth element

Publications (1)

Publication Number Publication Date
JPS63270313A true JPS63270313A (en) 1988-11-08

Family

ID=14381956

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62104489A Pending JPS63270313A (en) 1987-04-30 1987-04-30 Composition for forming film and powder of metallic oxide of rare earth element

Country Status (1)

Country Link
JP (1) JPS63270313A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474866A (en) * 1990-07-13 1992-03-10 Dowa Mining Co Ltd Production of thin film using 1,3-diketone type organometallic complex
US6069237A (en) * 1995-09-11 2000-05-30 Montell Technology Company Bv Open-pentadienyl metallocenen ligands, polymerization catalysts/catalyst precursors and polymers therefrom
US6160072A (en) * 1997-05-02 2000-12-12 Ewen; John A. Process for polymerizing tactioselective polyolefins in condensed phase using titanocenes
US6180732B1 (en) 1993-09-24 2001-01-30 John A. Ewen Stereospecific metallocene catalysts with stereolocking α-cp substituents
JP2007238394A (en) * 2006-03-09 2007-09-20 Dainippon Printing Co Ltd Method and apparatus for producing metal oxide film
EP2017253A1 (en) * 2007-07-19 2009-01-21 UMC Utrecht Holding B.V. A particle comprising an organic lanthanide metal complex

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474866A (en) * 1990-07-13 1992-03-10 Dowa Mining Co Ltd Production of thin film using 1,3-diketone type organometallic complex
US6180732B1 (en) 1993-09-24 2001-01-30 John A. Ewen Stereospecific metallocene catalysts with stereolocking α-cp substituents
US6069237A (en) * 1995-09-11 2000-05-30 Montell Technology Company Bv Open-pentadienyl metallocenen ligands, polymerization catalysts/catalyst precursors and polymers therefrom
US6160072A (en) * 1997-05-02 2000-12-12 Ewen; John A. Process for polymerizing tactioselective polyolefins in condensed phase using titanocenes
JP2007238394A (en) * 2006-03-09 2007-09-20 Dainippon Printing Co Ltd Method and apparatus for producing metal oxide film
EP2017253A1 (en) * 2007-07-19 2009-01-21 UMC Utrecht Holding B.V. A particle comprising an organic lanthanide metal complex

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