JPH01312858A - Resin sealed semiconductor device - Google Patents
Resin sealed semiconductor deviceInfo
- Publication number
- JPH01312858A JPH01312858A JP14282488A JP14282488A JPH01312858A JP H01312858 A JPH01312858 A JP H01312858A JP 14282488 A JP14282488 A JP 14282488A JP 14282488 A JP14282488 A JP 14282488A JP H01312858 A JPH01312858 A JP H01312858A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- metal substrate
- semiconductor element
- moulding
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 229920005989 resin Polymers 0.000 title claims abstract description 37
- 239000011347 resin Substances 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 37
- 239000002184 metal Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000000465 moulding Methods 0.000 claims abstract description 10
- 239000003822 epoxy resin Substances 0.000 claims abstract description 3
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 239000010931 gold Substances 0.000 abstract description 2
- 238000001721 transfer moulding Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/183—Connection portion, e.g. seal
- H01L2924/18301—Connection portion, e.g. seal being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、樹脂封止型半導体装置の構造に関し、特に、
半導体素子を載置した金属基板の形状に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to the structure of a resin-sealed semiconductor device, and in particular,
It relates to the shape of a metal substrate on which a semiconductor element is mounted.
従来の技術
従来、この種の半導体装置においては、半導体素子を載
置する金属基板は銅または銅合金から成り、Ｎｉ等のメ
ツキが施されているが、樹脂との接合面ではＮｉ等のメ
ツキを行わず、金属基板と樹脂の密着度を向上させる方
法が用いられる。又、金属基板にたとえば円形、あるい
はストライプ状の渚を設けるなどの方法で、密着度の向
上をはかっていた（第３図（ａ＞、（ｂ）、第４図（ａ
）、（ｂ）参照（例えば特公昭６２−２５９０５号公報
））。Conventionally, in this type of semiconductor device, the metal substrate on which the semiconductor element is mounted is made of copper or a copper alloy, and is plated with Ni or the like. Instead, a method is used to improve the adhesion between the metal substrate and the resin. In addition, attempts were made to improve adhesion by providing circular or striped stripes on the metal substrate (Fig. 3 (a), (b), Fig. 4 (a)).
), (b) (for example, Japanese Patent Publication No. 62-25905)).
発明が解決しようとする課題
上述した従来の樹脂封止型半導体装置、特に、樹脂によ
り半導体素子を載置する金属基板の両生面を樹脂で封止
する構造による樹脂絶縁型半導体装置の場合には、半導
体素子を載置した金属基板の主面（以下正面と記す）と
異なる他方の主面（以下裏面と記す）側の樹脂の厚さは
、半導体装置の放熱性に影響するために、極力薄く設計
され、通常０．３〜０．５１程度である。Problems to be Solved by the Invention In the case of the above-mentioned conventional resin-sealed semiconductor device, especially a resin-insulated semiconductor device that has a structure in which both surfaces of a metal substrate on which a semiconductor element is mounted are sealed with resin, The thickness of the resin on the other main surface (hereinafter referred to as the back surface), which is different from the main surface (hereinafter referred to as the front side) of the metal substrate on which the semiconductor element is mounted, has an effect on the heat dissipation of the semiconductor device, so the thickness of the resin should be minimized as much as possible. It is designed to be thin, and is usually about 0.3 to 0.51.
しかしながら、上記部分の樹脂は成形金型を用いて封止
され、金型から取出す時点で十分な強度を得られなかっ
た場合には、半導体素子を載置した金属基板から４１離
してしまい、放熱性、あるいは耐湿性等の面で不具合を
生じさせる。However, the resin in the above part is sealed using a mold, and if it does not have sufficient strength when taken out from the mold, it will be separated from the metal substrate on which the semiconductor element is mounted, causing heat dissipation. This may cause problems in terms of performance, moisture resistance, etc.
したがって、樹脂の強度が十分に高まった後に金型から
取出す必要性があり、樹脂成形工程の効率向上に制限を
加えていた。Therefore, it is necessary to remove the resin from the mold after the strength of the resin has been sufficiently increased, which limits the efficiency of the resin molding process.
本発明は従来の上記実情に鑑みてなされたものであり、
従って本発明の目的は、従来の技術に内在する上記課題
を解決することを可能とした新規な樹脂封圧型半導体装
置を提Ｑ％することにある。The present invention has been made in view of the above-mentioned conventional situation,
Therefore, an object of the present invention is to provide a novel resin-sealed semiconductor device that can solve the above-mentioned problems inherent in the conventional technology.
発明の従来技術に対する相違点
上述した従来の樹脂封止型半導体装置に対し、本発明は
、樹脂成形工程での半導体素子を載置する金属基板、特
に裏面と樹脂の密着強度をＪ１Ｍ械的な結合構造により
強めるという相違点を有する。Differences between the invention and the prior art In contrast to the conventional resin-sealed semiconductor device described above, the present invention improves the adhesion strength between the resin and the metal substrate on which the semiconductor element is placed during the resin molding process, especially the back surface using J1M mechanical technology. The difference is that it is strengthened by the bonding structure.
課題を解決するための手段
前記目的を達成するために、本発明に係る樹脂封止型半
導体装置は、半導体素子を載置した金属基板のうち、樹
脂と接合する面にあらかじめ作られた開口部より幅広の
中空部を有する凹部と、前記凹部を充填するよう成形さ
れたエポキシ樹脂等のモールド樹脂部とを備えて構成さ
れる。Means for Solving the Problems In order to achieve the above object, a resin-sealed semiconductor device according to the present invention includes an opening made in advance on the surface of a metal substrate on which a semiconductor element is mounted, which is to be bonded to the resin. It is configured to include a recessed portion having a wider hollow portion, and a molded resin portion such as epoxy resin molded to fill the recessed portion.
実施例
次に、本発明をその好ましい各実施例について図面を参
照して具体的に説明する。Embodiments Next, preferred embodiments of the present invention will be specifically explained with reference to the drawings.
第１図（ａ）〜（ｃ）は本発明に係る半導体装置の第１
の実施例を示し、第１図（ａ）は半導体素子を載置する
金属基板の裏面側平面図、第１図（ｂ）は第１図（ａ）
のＡ−Ａ’線に沿った断面図である。FIGS. 1(a) to 1(c) show a first diagram of a semiconductor device according to the present invention.
FIG. 1(a) is a plan view of the back side of a metal substrate on which a semiconductor element is mounted, and FIG. 1(b) is a plan view of the back side of a metal substrate on which a semiconductor element is placed.
It is a sectional view along the AA' line of.
第１図（ａ）、（ｂ）を参照するに、半導体素子５を載
置する金属基板１の裏面部に、円形凹部３が形成されて
いる。前記円形凹部３は、その開口部の径よりも内部の
中空部分の径を少なくと６１，２倍程度以上に決定され
る。Referring to FIGS. 1(a) and 1(b), a circular recess 3 is formed on the back surface of a metal substrate 1 on which a semiconductor element 5 is placed. The diameter of the hollow portion inside the circular recess 3 is determined to be at least 61.2 times the diameter of the opening thereof.
このような形状を有する金属基板１を用い、半導体素子
５を載置し、しかる後にアルミ、金等の金属細線を用い
半導体素子５の電極と金属基板１に連なる外部リード線
２に接続する。その後、トランスファ成形機等により金
属基板１をモールド樹脂４により封止する。A semiconductor element 5 is mounted on the metal substrate 1 having such a shape, and then the electrodes of the semiconductor element 5 are connected to the external lead wires 2 connected to the metal substrate 1 using thin metal wires such as aluminum or gold. Thereafter, the metal substrate 1 is sealed with mold resin 4 using a transfer molding machine or the like.
この封止工程では、溶融した樹脂が円形凹部３を充填、
硬化し、第１図（ｃ）に示すように、モールド樹脂４と
金属基板１は、機械的に強固な接合を形成する。In this sealing process, the molten resin fills the circular recess 3,
After curing, the mold resin 4 and the metal substrate 1 form a mechanically strong bond as shown in FIG. 1(c).
第２図（ａ）、（ｂ）は本発明に係る半導体装置の第２
の実施例を示す図であり、第２図（ａ）は半導体素子を
ｎ置する金属基板の裏面側平面図、第２図（ｂ）は第２
図（ａ）のＢ−Ｂ’線に沿った断面図である。FIGS. 2(a) and 2(b) show the second part of the semiconductor device according to the present invention.
FIG. 2(a) is a plan view of the back side of a metal substrate on which a semiconductor element is placed, and FIG. 2(b) is a plan view of the second
It is a sectional view taken along the line BB' of figure (a).
第２図（ａ）、（ｂ）を参照するに、第２の実施例にお
いては、金属基板１の裏面部にストライプ状の凹部６が
形成されている。前記凹部６は、その開口部の溝幅より
も、内部の中空部分の溝幅が少なくとも１．２倍以上に
なるように決定される。Referring to FIGS. 2(a) and 2(b), in the second embodiment, striped recesses 6 are formed on the back surface of the metal substrate 1. The groove width of the hollow portion inside the recess 6 is determined to be at least 1.2 times larger than the groove width of the opening thereof.
この金属基板１を用いることで前記第１の実施例と同様
に、モールド樹脂４と金属基板１の強固な接合を実現で
きる。By using this metal substrate 1, a strong bond between the mold resin 4 and the metal substrate 1 can be realized as in the first embodiment.
又、第１、第２の実施例にこだわることなく、凹部の形
状を、開口部より中空部で広くなるよう選択することで
、同様な効果が期待できる。Furthermore, without being limited to the first and second embodiments, similar effects can be expected by selecting the shape of the recess so that the hollow part is wider than the opening part.
発明の詳細
な説明したように、本発明によれば、半導体素子を載置
する金属基板と、モールド樹脂の接合を構造的に強固に
することにより、特にモールド樹脂成形時に要する樹脂
の硬化時間を短縮することができる効果が得られる。As described in detail, according to the present invention, by structurally strengthening the bond between the metal substrate on which a semiconductor element is placed and the mold resin, the curing time of the resin required during mold resin molding can be reduced. The effect of shortening the time can be obtained.
具体的には、従来のこの種の半導体装置では金属基板と
モールド樹脂の接合強度は両者の面密着力に依存してい
たために、モールド樹脂が十分に硬化するまで金型内に
おいて保持、加熱する必要があったが、本発明の半導体
装置では、モールド１Ｍ脂の硬度がより低い場合でも金
属基板とモールド樹脂の接合は保たれる。このために、
成形時の樹脂硬化時間を短縮することができる。Specifically, in conventional semiconductor devices of this type, the bonding strength between the metal substrate and the mold resin depends on the surface adhesion between the two, so the mold resin must be held and heated in the mold until it is sufficiently hardened. Although necessary, in the semiconductor device of the present invention, the bond between the metal substrate and the mold resin can be maintained even when the hardness of the mold 1M resin is lower. For this,
The resin curing time during molding can be shortened.
【図面の簡単な説明】
第１図（ａ）〜（ｃ）は本発明に係る半導体装置の第１
の実施例を示し、（ａ）は半導体素子を載置する金属基
板の裏面側平面図、（ｂ）は第１図（ａ）のＡ−Ａ’線
に沿った断面図、（Ｃ）は第１図（ａ）の金属基板を用
いてモールド樹脂封止を行った後の、Ａ−Ａ’線に沿っ
た断面図である。
第２図（ａ）、（ｂ）は本発明に係る半導体装置の第２
の実施例を示し、（ａ＞は金属基板の裏面側平面図、（
ｂ）は第２図（ａ）のＢ−Ｂ’線に沿った断面図である
。
第３図（ａ）、（ｂ） 、第４図（ａ）、（ｂ）はこの
種の樹脂封止型半導体装置の従来例を示し、第３図（ａ
）、第４図（ａ）はそれぞれ金属基板の従来例の裏面側
平面図、第３図（ｂ）は第３図（ａ）のＣ−Ｃ’線に沿
った断面図、第４図（ｂ）は第４図（ａ）のＤ −Ｄ’
線に沿った断面図である。
１．１′、、、半導体素子を載置する金属基板、２１１
．外部リード線、３１１０円形四円形率発明による）、
４．、、モールドｆｉｓｔ脂、５５．、半導体素子、６
１７．ストライブ状凹部（本発明による）、７．。
、円形凹部（従来例による）、８．、、ストライブ状講
（従来例による）
特許出願人 日本電気株式会社
代 理 人 弁理士 熊谷雄太部
Ａ′
ｉａｌ ｉｂｌ Ｉ
ＣＩ第１図
Ｂ′
［ａＢ ｌｂｌ
第２図
Ｃ′
（ａｌ ｉｂｌ
第３図 １″。
８゜
６・
ｔｏｌ ｆｂｌ
第４図
半鴇俸＃壬を載置Ｖる↑／ＬＸ板
円形凹部（従来４＋ｌｌ：！る）
ストライプぴ溝（従来例Ｉ：Ｊる）[BRIEF DESCRIPTION OF THE DRAWINGS] FIGS. 1(a) to 1(c) show a first diagram of a semiconductor device according to the present invention.
1(a) is a plan view of the back side of a metal substrate on which a semiconductor element is placed, (b) is a sectional view taken along the line AA' in FIG. FIG. 2 is a cross-sectional view taken along line AA' after sealing with mold resin using the metal substrate of FIG. 1(a). FIGS. 2(a) and 2(b) show the second part of the semiconductor device according to the present invention.
An example is shown in which (a> is a plan view of the back side of the metal substrate, (
b) is a sectional view taken along line BB' in FIG. 2(a). 3(a), (b) and FIG. 4(a), (b) show conventional examples of this type of resin-sealed semiconductor device, and FIG. 3(a)
), FIG. 4(a) is a plan view of the back side of a conventional example of a metal substrate, FIG. 3(b) is a sectional view taken along the line CC' of FIG. 3(a), and FIG. b) is D-D' in Fig. 4(a)
It is a sectional view along the line. 1.1', 211, a metal substrate on which a semiconductor element is placed
．． External lead wire, according to the 3110 circular quadrilateral invention),
4. ,, mold fist fat, 55. , semiconductor device, 6
17. 7. striped recesses (according to the invention); . , circular recess (according to conventional example), 8. ,, Strive Letter Lecture (Based on Conventional Example) Patent Applicant Agent of NEC Corporation Patent Attorney Yutabe Kumagai A' ial Ibl I
CI Fig. 1 B' [aB lbl Fig. 2 C' (al ibl Fig. 3 1''. 8゜6. 4+ll:!) Striped groove (conventional example I: Jru)
Claims (1)
をエポキシ樹脂等のモールド樹脂により封止した半導体
装置において、前記金属基板の樹脂との接合面に開口部
より幅広に作られた中空部を有する凹部を含むことを特
徴とする樹脂封止型半導体装置。In a semiconductor device in which a semiconductor element and a metal substrate on which the semiconductor element is mounted are sealed with a molding resin such as an epoxy resin, a hollow part made wider than an opening is formed at the joint surface of the metal substrate with the resin. 1. A resin-sealed semiconductor device comprising a recessed portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14282488A JPH01312858A (en) | 1988-06-10 | 1988-06-10 | Resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14282488A JPH01312858A (en) | 1988-06-10 | 1988-06-10 | Resin sealed semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01312858A true JPH01312858A (en) | 1989-12-18 |
Family
ID=15324477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14282488A Pending JPH01312858A (en) | 1988-06-10 | 1988-06-10 | Resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01312858A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996036074A1 (en) * | 1995-05-11 | 1996-11-14 | Rohm Co., Ltd. | Semiconductor device |
| JP2008028053A (en) * | 2006-07-20 | 2008-02-07 | Hitachi Ltd | Resin-mold power semiconductor apparatus |
-
1988
- 1988-06-10 JP JP14282488A patent/JPH01312858A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1996036074A1 (en) * | 1995-05-11 | 1996-11-14 | Rohm Co., Ltd. | Semiconductor device |
| US6242801B1 (en) | 1995-05-11 | 2001-06-05 | Rohm Co., Ltd. | Semiconductor device |
| JP2008028053A (en) * | 2006-07-20 | 2008-02-07 | Hitachi Ltd | Resin-mold power semiconductor apparatus |
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