JPH01312856A - Resin sealed semiconductor device and manufacture thereof - Google Patents
Resin sealed semiconductor device and manufacture thereofInfo
- Publication number
- JPH01312856A JPH01312856A JP63142904A JP14290488A JPH01312856A JP H01312856 A JPH01312856 A JP H01312856A JP 63142904 A JP63142904 A JP 63142904A JP 14290488 A JP14290488 A JP 14290488A JP H01312856 A JPH01312856 A JP H01312856A
- Authority
- JP
- Japan
- Prior art keywords
- bed
- groove
- wax
- resin
- wave element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011347 resin Substances 0.000 title claims abstract description 32
- 229920005989 resin Polymers 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000010897 surface acoustic wave method Methods 0.000 claims abstract description 34
- 238000007789 sealing Methods 0.000 claims abstract description 12
- 238000001704 evaporation Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims 1
- 239000013013 elastic material Substances 0.000 claims 1
- 230000008020 evaporation Effects 0.000 abstract description 2
- 239000003566 sealing material Substances 0.000 abstract 1
- 239000001993 wax Substances 0.000 description 39
- 238000001721 transfer moulding Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 239000004642 Polyimide Substances 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 2
- 239000012188 paraffin wax Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000219122 Cucurbita Species 0.000 description 1
- 235000009852 Cucurbita pepo Nutrition 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
この発明は弾性表面波素子を含む慢数の半導体素子を同
一パッケージ内に封止した樹脂封止型半導体装置及びそ
の製造方法に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) This invention relates to a resin-sealed semiconductor device in which a plurality of semiconductor elements including a surface acoustic wave element are sealed in the same package, and its manufacture. Regarding the method.
（従来の技術）
固体の表面に沿って伝搬する弾性波を弾性表面波（Ｓ
Ａ Ｗ ： ５ｕｒｒａｃｅ ａｃｏｕｓｔｉｃ ｗａ
ｖｅ）といい、これを利用した素子は弾性表面波素子（
ＳＡＷデバイス）と呼ばれている。弾性表面波素子は表
面上で１ｎｎ接点駆動と受信ができる利点があり、フィ
ルタや共振子、各種信号処理素子等に利用されている。(Prior art) Elastic waves propagating along the surface of a solid are called surface acoustic waves (S
A W: 5urrace acoustic wa
ve), and a device using this is called a surface acoustic wave device (
It is called a SAW device). Surface acoustic wave elements have the advantage of being able to drive and receive 1nn contacts on the surface, and are used in filters, resonators, various signal processing elements, and the like.
また、基板が支持体になるので耐振性、耐衝撃性に優れ
ているという点から、弾性表面波素子自体をディスクリ
ートなパッケージ構造にしていた。In addition, since the substrate serves as a support, the surface acoustic wave element itself has a discrete package structure because it has excellent vibration resistance and impact resistance.
弾性表面波素子を封止する場合、表面上の弾性波を利用
するその機能上、素子表面領域は空洞にする必要がある
。第７図（ａ）ないしくｄ）は弾性表面波素子を樹脂に
より封止する工程を順次示した断面図である。まず、第
７図（ａ）のように弾性表面波素子２０の表面１に溶融
したワックスを塗布し、冷却してワックス層２Ｉを形成
する。次に第７図（ｂ）に示すようにデイツプ法もしく
は流動浸漬法等により、全体を多孔質性の樹脂層２２で
被覆する。次に、第７図（ｃ）に示すように加熱をする
ことによりワックス層２１が溶融し、樹脂層２２の微細
孔にワックスが吸収され、さらには蒸発してワックス層
２Ｉの領域には空′Ｍ２３ができる。この後、第７図（
ｄ）に示すよ・）に製品外形を整えるため及び信頼性を
向上させるための樹脂２４をデイツプ法または流動浸漬
法により全体に被覆する。When sealing a surface acoustic wave element, the surface area of the element needs to be hollow due to its function of utilizing acoustic waves on the surface. FIGS. 7(a) to 7(d) are cross-sectional views sequentially showing the steps of sealing the surface acoustic wave element with resin. First, as shown in FIG. 7(a), molten wax is applied to the surface 1 of the surface acoustic wave element 20 and cooled to form the wax layer 2I. Next, as shown in FIG. 7(b), the entire structure is covered with a porous resin layer 22 by a dip method, a fluidized dipping method, or the like. Next, as shown in FIG. 7(c), the wax layer 21 is melted by heating, the wax is absorbed into the micropores of the resin layer 22, and is further evaporated, leaving a void in the area of the wax layer 2I. 'M23 can be done. After this, Figure 7 (
As shown in d), the entire product is coated with a resin 24 to adjust the outer shape of the product and to improve reliability using a dip method or a fluidized dipping method.
このようにして、封止された弾性表面波素子２１の表面
領域上、に空洞２３が形成されるが、その際、多孔質性
の樹脂層２２の微細孔か、その孔の数や大きさにかなり
のばらつきがあるため、ワックスが完全に蒸発しないこ
とが多く、弾性表面波素子２１の表面にワックスの蒸発
残りが存在しでいることがある。弾性表面波素′ｆ２１
の表面上にワックス等の固体物質が存在すると、素子が
充分な動作ができないため不良となり、歩留りの低下の
要因となる。さらに、微細孔を有する樹脂層２２はその
信頼性、特に耐湿性に乏しいという欠点がある。また、
弾性表面波素子自体をディスクリートなパッケージ構造
にしているが、このデバイスの用途上何らかの組合わせ
回路として動作させることが多いので、このようなディ
スクリートなパッケージ構造にすると他の回路との相互
の設計が面倒で、しかも実装する時に使用される面積が
増大する。In this way, a cavity 23 is formed on the surface area of the sealed surface acoustic wave element 21. At this time, the cavity 23 is formed on the surface area of the sealed surface acoustic wave element 21. Since there is a considerable variation in the amount of wax, the wax often does not completely evaporate, and some evaporated wax may remain on the surface of the surface acoustic wave element 21. Elastic surface wave element 'f21
If a solid substance such as wax is present on the surface of the device, the device will not be able to operate satisfactorily, resulting in a defect, which will cause a decrease in yield. Furthermore, the resin layer 22 having micropores has a drawback in that its reliability, particularly its moisture resistance, is poor. Also,
The surface acoustic wave element itself has a discrete package structure, but since this device is often operated as some kind of combinational circuit, using such a discrete package structure makes it difficult to design interactions with other circuits. This is troublesome and increases the area used during implementation.
（発明が解決しようとする課題）
従来では弾性表面波素子の表面領域上に空洞形成のため
に素子表面上のワックス層を除去する工程で、素子を封
止する樹脂として微細孔を有する多孔質性樹脂を使用し
、加熱した際、ワックス層を多孔質性樹脂の微細孔に吸
収、蒸発させるようにしている。しかし、この方法では
多孔質性樹脂の微細孔にばらつきがあるため、ワックス
層が完全に蒸発されず、そのデバイスの動作に問題が生
じ、歩留り低下の要因となっている。また、弾性表面波
素子自体をディスクリートなパッケージ構造にすると、
他の回路との相互の設計が面倒で、実装面積が増大する
という問題がある。(Problem to be Solved by the Invention) Conventionally, in the process of removing a wax layer on the surface of a surface acoustic wave device in order to form a cavity on the surface region, a porous resin having micropores is used as a resin for sealing the device. When heated, the wax layer is absorbed into the micropores of the porous resin and evaporated. However, in this method, the wax layer is not completely evaporated due to variations in the micropores of the porous resin, causing problems in the operation of the device and causing a decrease in yield. In addition, if the surface acoustic wave element itself has a discrete package structure,
There are problems in that mutual design with other circuits is troublesome and the mounting area increases.
この発明は」、記事情を考慮してなされたものであり、
その目的は、ワックスの蒸発残りがなく、弾性表面波素
子の表面領域上に完全な空洞を形成することにより製品
歩留りが向上され、しかもディスクリートなパッケージ
構造でない樹脂封止型半導体装置とその製造方法を提供
することにある。This invention was made in consideration of the circumstances of the article.
The purpose is to provide a resin-sealed semiconductor device and its manufacturing method, which improves product yield by forming a complete cavity on the surface area of the surface acoustic wave device without wax remaining after evaporation, and which does not have a discrete package structure. Our goal is to provide the following.
［発明の構成］
（課題を解決するための手段）
この発明の樹脂封止型半導体装置は、溝部を有しこの溝
部もしくはこの溝部によって囲まれた領域内に貫通孔が
形成されたベッドと、このベッド上の上記溝部内もしく
はこの溝部によって囲まれた上記領域内に配置された弾
性表面波素子と、少なくとも上記弾性表面波素子上には
空洞が形成されるように上記ベッドを封止する樹脂封止
部材とから構成される。[Structure of the Invention] (Means for Solving the Problems) A resin-sealed semiconductor device of the present invention includes a bed having a groove and a through hole formed in the groove or a region surrounded by the groove; A surface acoustic wave element disposed in the groove on the bed or in the area surrounded by the groove, and a resin that seals the bed so that a cavity is formed at least on the surface acoustic wave element. It is composed of a sealing member.
この発明の樹脂封止型半導体装置の製造方法は、溝部を
有しこの溝部もしくはこの溝部によって囲まれた領域内
に貫通孔が形成されたベッド上の溝部内もしくはこの溝
部によって囲まれた領域内の上記貫通孔を塞がない位置
に弾性表面波素子をダイボンディングする工程と、上記
溝部内を除いた上記ベッド上の所定の位置もしくは溝部
によって囲まれた領域内の所定の位置に少なくとも１個
の半導体素子をダイボンディングする工程と、上記弾性
表面波素子と半導体素子を相互にワイヤボンディングす
る工程と、上記弾性表面波素子を覆うように上記ベッド
上の溝部内もしくは溝部によって囲まれた領域内に溶融
したワックスを塗布しワックス層を形成する工程と、こ
のワックス層を覆うように第１の樹脂層を形成する工程
と、減圧加熱により上記ワックスを上記ベッドの貫通孔
から蒸発させ、ワ・ソクス層の領域を空洞にする工程と
、上記ベッドの貫通孔をふさぐ工程と、全体を第２の樹
脂層により封止する工程とから構成される。The method for manufacturing a resin-sealed semiconductor device of the present invention provides a method for manufacturing a resin-sealed semiconductor device in a groove on a bed having a groove and a through hole formed in the groove or in an area surrounded by the groove. a step of die-bonding a surface acoustic wave element at a position that does not block the through hole, and at least one surface acoustic wave element at a predetermined position on the bed excluding the inside of the groove or a predetermined position within an area surrounded by the groove. a step of die-bonding the semiconductor element, a step of wire-bonding the surface acoustic wave element and the semiconductor element to each other, and a step of bonding the surface acoustic wave element and the semiconductor element to each other; a step of applying molten wax to form a wax layer; a step of forming a first resin layer to cover this wax layer; and a step of evaporating the wax from the through holes of the bed by heating under reduced pressure. The method is comprised of a step of making a hollow region of the sox layer, a step of closing the through-hole of the bed, and a step of sealing the whole with a second resin layer.
（作用）
弾性表面波素子自体のみを封止するのではなく、弾性表
面波素子をリードフレームのベッドに載せることにより
、それと組合わされる他の半導体素子も同一ベッド上に
ダイボンディング、ワイヤボンディングして封止する。(Function) Rather than sealing only the surface acoustic wave element itself, by placing the surface acoustic wave element on the bed of the lead frame, other semiconductor elements to be combined with it can also be die-bonded or wire-bonded on the same bed. and seal.
これにより、実装に便利な１パツケージ構造にできる。This allows for a one-package structure that is convenient for mounting.
また、溶融したワックスをベッド上に滴下したとき、ベ
ッドに溝を設けていることにより、ワックスの表面張力
のため、溝の外側に流出することな（ワックス層が形成
される。次に、ベッドの全面に液状樹脂を塗布する際も
、ベッドの縁があるので液状樹脂の表面張力のため、ベ
ッドの外に流出することなく第２の樹脂層が形成される
。次に、真空中で加熱することにより、ワックス層が溶
けてベッドに設けられている貫通孔から蒸発し、ワック
ス層を完全に除去し、空洞が形成される。これにより、
ワックス残りによる不良が低減され、製品歩留りの向上
が図れる。そして、最外殻にはトランスファーモールド
法を用いて第２の樹脂層によって封止するので、信頼性
、特に耐湿性に非常に優れたものができる。In addition, when melted wax is dropped onto the bed, the surface tension of the wax prevents it from flowing out of the grooves (a wax layer is formed). Even when applying liquid resin to the entire surface of the bed, the second resin layer is formed without flowing out of the bed due to the surface tension of the liquid resin because of the edge of the bed.Next, heating in vacuum By doing so, the wax layer melts and evaporates from the through holes provided in the bed, completely removing the wax layer and forming a cavity.
Defects due to wax residue are reduced, and product yield can be improved. Since the outermost shell is sealed with a second resin layer using a transfer molding method, a product with excellent reliability, particularly moisture resistance, can be obtained.
（実施例）
以下、図面を参照してこの発明を実施例により説明する
。(Examples) Hereinafter, the present invention will be explained by examples with reference to the drawings.
第１図はこの発明に係る樹脂封止型半導体装置のリード
フレームの構成を示す斜視図であり、第２図は第１図の
Ａ−Ａ’線に沿った断面図である。FIG. 1 is a perspective view showing the structure of a lead frame of a resin-sealed semiconductor device according to the present invention, and FIG. 2 is a sectional view taken along line AA' in FIG. 1.
１はリードフレームのリード、２はそのベッドである。1 is the lead of the lead frame, and 2 is its bed.
ベッド２上内の周囲には溝部３が形成され、溝部３に囲
まれた領域にはベッド２を貫通する貫通孔４が形成され
ており、弾性表面波素子５と半導体素子６が所定の位置
にダイボンディングされ、ボンディングワイヤ７によっ
て配線が施されている。A groove 3 is formed around the top of the bed 2, and a through hole 4 penetrating the bed 2 is formed in an area surrounded by the groove 3, so that a surface acoustic wave element 5 and a semiconductor element 6 are placed in predetermined positions. The wires are die-bonded and wired using bonding wires 7.
このような構成のリードフレームを用いた半導体装置を
封止する］−程を第３図（ａ）ないしくｅ）の断面図で
説明する。まず、８０℃程度に加熱されたベッド２上か
ら、例えば溶融したパラフィン系のワックスを滴下して
弾性表面波素子５及び半導体素子６をすべて被覆する。The process of sealing a semiconductor device using a lead frame having such a structure will be explained with reference to the cross-sectional views of FIGS. 3(a) to 3(e). First, molten paraffin wax, for example, is dropped onto the bed 2 heated to about 80° C. to completely cover the surface acoustic wave element 5 and the semiconductor element 6.
このとき、溝部３があるためワックスの表面張力が働い
て、溝の外側には流出しない。その後、室温で放置して
冷却し、ワックス層８を形成する（第３図（ａ））。At this time, since the groove portion 3 is present, the surface tension of the wax acts, and the wax does not flow out to the outside of the groove. Thereafter, it is left to cool at room temperature to form a wax layer 8 (FIG. 3(a)).
次に、ベッド２上にワックス層８を覆うようにして液状
のエポキシ樹脂を塗布する。このときも、ベッド２の縁
があるため液状樹脂の表面張力が働いて、ベッド２の外
側には流出しない。その後、６０℃以下で硬化させて樹
脂層９を形成する（第３図（ｂ））。Next, liquid epoxy resin is applied onto the bed 2 so as to cover the wax layer 8. At this time as well, since there is an edge of the bed 2, the surface tension of the liquid resin acts and does not flow out to the outside of the bed 2. Thereafter, the resin layer 9 is formed by curing at 60° C. or lower (FIG. 3(b)).
次に、真空中にて２００℃程度に加熱し、ワックス層８
を蒸発させる。その際、ベッド２に設けられた貫通孔４
からワックスは蒸発していき、約４時間程度で完全な空
洞１０ができる（第３図（Ｃ））。Next, the wax layer 8 is heated to about 200°C in a vacuum.
evaporate. At that time, the through hole 4 provided in the bed 2
The wax evaporates from there, and a complete cavity 10 is formed in about 4 hours (Fig. 3(C)).
次に、ベッド２の裏面に板状の樹脂テープ（例えばポリ
イミドテープ） １１を貼り、貫通孔４をふさぐ（第３
図（ｄ））。Next, a plate-shaped resin tape (for example, polyimide tape) 11 is pasted on the back surface of the bed 2, and the through hole 4 is closed (the third
Figure (d)).
次に、トランスファーモールド法を用いて全体を樹脂層
１２で封止する（第３図（ｅ））。Next, the entire structure is sealed with a resin layer 12 using a transfer molding method (FIG. 3(e)).
このようにして、この発明の樹脂封止型半導体装置がで
きる。この方法によれば、空洞を形成するだめに除去す
るワックスが残らず蒸発し、弾性表面波素子の特性不良
が大幅に低減する。さらにトランスファーモールド法を
用いてこの装置を封止するため、従来と比べて信頼性、
特に耐湿性が向Ｊ二する。In this way, the resin-sealed semiconductor device of the present invention is produced. According to this method, all the wax to be removed before forming the cavity is evaporated, and the characteristic defects of the surface acoustic wave element are significantly reduced. Furthermore, since this device is sealed using a transfer molding method, it is more reliable and
In particular, moisture resistance is improved.
第４図はこの発明のもう１つの実施例を示すリード７［
・−ムのベッドの構成を示す斜視図であり、第５１４は
第４図のＡ−Ａ′線に沿った断面図である。ベッド２４
−の溝部３が今度は所定の幅に形成され、その中に４通
孔４が形成され、弾性表面枝素Ｔ−５が瓜通孔４をふさ
がないようにダイボンディングされており、溝部３以外
の領域上に半導体装Ｔ−（ｙ＋がグイポンデイ：／グさ
れている。FIG. 4 shows another embodiment of the present invention.
514 is a sectional view taken along the line A-A' in FIG. 4. FIG. bed 24
- Groove 3 is now formed to a predetermined width, four through holes 4 are formed therein, and the elastic surface branch elements T-5 are die-bonded so as not to block the gourd through holes 4. Semiconductor devices T-(y+) are placed on the other areas.
このような（１３成のリードフレームを用いた半導体装
置を封止する工程を第６図（３）ないしくｅ／１の断面
図で説明する。まず、８０ ’Ｃ程度に加熱されたベッ
ド２の溝部３の領域に、例えば溶融したパラフィン系の
ワックスを滴下して弾性表面波素子５をすべて肢環する
。このとき、溝部３によって′ノ・クスのメ、面体力が
働いて、溝の外側には流出しない。その後、室温で放置
して冷却し、ワックス層８を形成する（第６図（ａ））
。The process of sealing a semiconductor device using such a (13-component) lead frame will be explained with reference to FIG. 6 (3) or the cross-sectional view of e/1. For example, melted paraffin wax is dropped into the area of the groove 3 to completely encircle the surface acoustic wave element 5. At this time, the surface force of the groove 3 is applied to the area of the groove. It does not flow out to the outside.Then, it is left at room temperature and cooled to form a wax layer 8 (Fig. 6(a)).
.
次に、ベッド２上にワックス層８及び半導体素子０を覆
うようＩＪシて液状のエポキシ樹脂を塗布する。このと
きも、ベッド２の縁があるため液状樹脂の表面張力が働
いて、ベッド２の外側には流出しない。その後、６０℃
以下で硬化させて樹脂層９を形成する（第６図＜ｂ））
１、
次に、真空中にて２００ ℃稈邸に加熱し５、ワックス
層８を蒸発させる、その際、溝部３に設けられた貫通孔
４からワックスは蒸発していき、約４時間程度で完全な
空洞ｌＯができる（第６図（Ｃ〉）。Next, liquid epoxy resin is applied onto the bed 2 by IJ so as to cover the wax layer 8 and the semiconductor element 0. At this time as well, since there is an edge of the bed 2, the surface tension of the liquid resin acts and does not flow out to the outside of the bed 2. After that, 60℃
The resin layer 9 is formed by curing as follows (Fig. 6<b))
1. Next, the wax layer 8 is heated to 200°C in a vacuum to evaporate the wax layer 8. At this time, the wax evaporates from the through hole 4 provided in the groove 3, and the wax layer 8 is evaporated in about 4 hours. A complete cavity IO is formed (Fig. 6 (C)).
次に、ベッド２の裏面に板状の樹脂テープ（例えばポリ
イミドテープ）目≦−貼り、貫通孔４をふさぐ（第６図
（ｄ））。Next, a plate-shaped resin tape (for example, polyimide tape) is pasted on the back surface of the bed 2 to close the through hole 4 (FIG. 6(d)).
次に、トランスファーモールド法を用いて全体を樹脂層
１２で封１トする（第６図（ｅ））。Next, the entire structure is sealed with a resin layer 12 using a transfer molding method (FIG. 6(e)).
このようにして、この発明の樹脂封止型半導体装置がで
きる。この方法によれば、第３図（ｅ）の構造よりも空
洞が小さく形成されるため、トランスファ−モールド法
による圧力にも充分に耐えられる。、そして、前記実施
例と同様に空洞を形成するために入れたワックスは残ら
ず蒸発し、弾性表面波素子の特性不良が大幅に低減し、
トランスファーモールド法を用いてこの装置を封止する
ことにより、信頼性、特に耐湿性か向−Ｆする。In this way, the resin-sealed semiconductor device of the present invention is produced. According to this method, since the cavity is formed smaller than the structure shown in FIG. 3(e), it can sufficiently withstand the pressure caused by the transfer molding method. Then, as in the above embodiment, all the wax put in to form the cavity evaporates, and the characteristic defects of the surface acoustic wave element are significantly reduced.
Encapsulating the device using a transfer molding process improves reliability, especially moisture resistance.
［発明の効果コ
１］上説明したようにこの発明によれば、ワックスの蒸
発残りがなく、弾性表面波素子の表面領域上に完全な空
洞を形成することにより製品歩留りが向−卜され、しか
も実装に便利なパッケージ構造の樹脂封止型半導体装＋
５とその製造方法を提供することができる。[Effect of the Invention No. 1] As explained above, according to the present invention, the product yield is improved by forming a complete cavity on the surface area of the surface acoustic wave element without leaving wax evaporated. Moreover, the resin-sealed semiconductor device has a package structure that is convenient for mounting.
5 and a manufacturing method thereof.
第１図はこの発明に係る樹脂材ｉｈ Ｊ！２半導体装置
の一部の斜視図、第２図は第１図の断面図、第３図（ａ
）ないり、（ｅ）はこの発明の一実施例方法の主要な工
程を示す断面図、第４図はこの発明に係る樹脂層１ト型
゛１４導体装置の一部の斜視図、第５図は第４図の断面
レフ、第６図（ａ）ないしくｅ）はこの発明のもうｍ−
つの実施例方法の主要な工程る。
１・・・リードフレームのリード、２・・・リードフレ
ームのベッド、３・・溝部１，４−・・６通孔、５・・
・弾性表面波素子、６・・・半導体素子、７・・・ボン
ディングワイヤ、８・・・ワックス層、９，１２・・・
樹脂層、１０・・・空洞、１１・・・樹脂テープ。
出願人代理人 弁理士 鈴江武彦
１／゛１
第１図
１′１
第４図
第５図
２′５′４ ゝ３
第６図FIG. 1 shows the resin material ih J! according to this invention. 2 is a perspective view of a part of the semiconductor device, FIG. 2 is a sectional view of FIG. 1, and FIG.
) and (e) are cross-sectional views showing the main steps of a method according to an embodiment of the present invention, FIG. The figure is a cross-sectional reflection of FIG. 4, and FIGS. 6(a) to 6(e) are
The main steps of the two example methods are shown below. 1...Lead of lead frame, 2...Bed of lead frame, 3...Groove portions 1, 4-...6 through holes, 5...
・Surface acoustic wave element, 6... Semiconductor element, 7... Bonding wire, 8... Wax layer, 9, 12...
Resin layer, 10...Cavity, 11...Resin tape. Applicant's agent Patent attorney Takehiko Suzue 1/゛1 Figure 1 1'1 Figure 4 Figure 5 2'5'4 ゝ3 Figure 6
Claims (2)
まれた領域内に貫通孔が形成されたベッドと、上記ベッ
ド上の上記溝部内もしくはこの溝部によって囲まれた上
記領域内に配置された弾性表面波素子と、 少なくとも上記弾性表面波素子上には空洞が形成される
ように上記ベッドを封止する樹脂封止部材と を具備したことを特徴とする樹脂封止型半導体装置。(1) A bed having a groove and a through hole formed in the groove or a region surrounded by the groove, and an elastic material disposed in the groove or in the region surrounded by the groove on the bed. 1. A resin-sealed semiconductor device comprising: a surface wave element; and a resin sealing member sealing the bed so that a cavity is formed at least on the surface acoustic wave element.
まれた領域内に貫通孔が形成されたベッド上の溝部内も
しくはこの溝部によって囲まれた領域内の上記貫通孔を
塞がない位置に弾性表面波素子をダイボンディングする
工程と、 上記溝部内を除いた上記ベッド上の所定の位置もしくは
溝部によって囲まれた領域内の所定の位置に少なくとも
１個の半導体素子をダイボンディングする工程と、 上記弾性表面波素子と半導体素子を相互にワイヤボンデ
ィングする工程と、 上記弾性表面波素子を覆うように上記ベッド上の溝部内
もしくは溝部によって囲まれた領域内に溶融したワック
スを塗布しワックス層を形成する工程と、 上記ワックス層を覆うように第１の樹脂層を形成する工
程と、 減圧加熱により上記ワックスを上記ベッドの貫通孔から
蒸発させ、ワックス層の領域を空洞にする工程と、 上記ベッドの貫通孔をふさぐ工程と、 全体を第２の樹脂層により封止する工程と を具備したことを特徴とする樹脂封止型半導体装置の製
造方法。(2) The bed has a groove and a through hole is formed in the groove or in the area surrounded by the groove.The bed has elasticity in a position that does not block the through hole in the groove or in the area surrounded by the groove. a step of die-bonding a surface wave element; a step of die-bonding at least one semiconductor element to a predetermined position on the bed excluding the inside of the groove or a predetermined position within a region surrounded by the groove; A process of wire bonding the surface acoustic wave element and the semiconductor element to each other, and forming a wax layer by applying molten wax within the grooves on the bed or within the area surrounded by the grooves so as to cover the surface acoustic wave elements. forming a first resin layer to cover the wax layer; evaporating the wax from the through-holes of the bed by heating under reduced pressure to make the wax layer region hollow; 1. A method for manufacturing a resin-sealed semiconductor device, comprising the steps of: blocking a through-hole of the device; and sealing the entire device with a second resin layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63142904A JPH01312856A (en) | 1988-06-10 | 1988-06-10 | Resin sealed semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63142904A JPH01312856A (en) | 1988-06-10 | 1988-06-10 | Resin sealed semiconductor device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01312856A true JPH01312856A (en) | 1989-12-18 |
Family
ID=15326314
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63142904A Pending JPH01312856A (en) | 1988-06-10 | 1988-06-10 | Resin sealed semiconductor device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01312856A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6566982B2 (en) * | 2000-08-28 | 2003-05-20 | Nrs Technologies Inc. | Lead frame set and saw filter using the same |
| US8395247B1 (en) * | 2009-06-29 | 2013-03-12 | Integrated Device Technology, Inc. | Method and apparatus for placing quartz SAW devices together with clock/oscillator |
-
1988
- 1988-06-10 JP JP63142904A patent/JPH01312856A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6566982B2 (en) * | 2000-08-28 | 2003-05-20 | Nrs Technologies Inc. | Lead frame set and saw filter using the same |
| US8395247B1 (en) * | 2009-06-29 | 2013-03-12 | Integrated Device Technology, Inc. | Method and apparatus for placing quartz SAW devices together with clock/oscillator |
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