JPH01301574A - Production of substrate for forming plated circuit and production of circuit board using said substrate - Google Patents

Abstract

PURPOSE:To obtain a substrate for forming a plated circuit and capable of forming a firm metal coating film by plating even to an amorphous glass substrate, by coating a surface of an insulating substrate with a phase-separation component capable of forming a phase-separated glass by heat-treatment, heat-treating the coating film to effect the phase-separation and removing the phase having low SiO2 content. CONSTITUTION:A surface of an insulating substrate is coated with a phase-separation component capable of forming a phase-separated glass by heat-treatment and the coating layer is heat-treated to effect the phase-separation into a phase having high SiO2 content and a phase having low SiO2 content. The phase having low SiO2 content is removed to obtain the objective substrate. The insulating substrate is preferably a glass substrate or a ceramic substrate such as alumina or mullite substrate. The phase-separation component forming a phase-separated glass by heat-treatment is e.g., a mixture containing SiO2 as a main component and mixed with an alkali metal such as lithium or sodium, oxide or salt of the alkali metal or a mixture of the above components and boron, boron oxide, boric acid or boric acid salt. The removal of the phase having low SiO2 content is carried out preferably by immersing the phase- separated glass substrate in water or in a dilute acid solution.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for manufacturing a plated circuit forming substrate and a method for manufacturing a wiring board using the substrate.

(Conventional technology) Modern industrial materials are required to have two types of functionality.

Particularly in the field of ceramics, the surface of ceramics is activated to improve printability and adhesion to metals.

There is a strong demand for a method that directly and firmly adheres glass compositions and the like.

Examples of methods for adhering metals, glass compositions, etc. to ceramics are 9. For example, simultaneous sintering of unfired ceramics and metal to achieve strong adhesion strength, and sintered ceramics with glass powder and metal powder. There is a thick film firing method that prints and bakes a paste mixed with

(Problem to be solved by the invention) However, the simultaneous firing method is
Since it is sintered at a temperature of 0 to 1600''C, the manufacturing process is complicated, and it has the drawbacks of high cost and cost.

Further, the thick film printing and firing method has disadvantages in that the adhesion between the metal and the ceramic is achieved through glass, so the adhesion is low, and the cost is high because noble metals such as Au, Ag, and Pd are used as the metal.

To address these drawbacks, ceramics are cheaper than metals.

These methods first roughen the surface by immersing sintered ceramics such as alumina in an acid or alkali solution such as hydrofluoric acid or sodium hydroxide, then sensitize the surface, and then perform an activation treatment to plate copper. .

Nickel plating is applied to make the metal adhere tightly.

On the other hand, in JP-A-61-208855, a crystallized glass layer is formed on a ceramic substrate, and after the surface of the crystallized glass layer is roughened by the same method as above, sensitization, activation treatment, copper A method of adhering metal by applying plating, nickel plating, etc. is shown.

However, the above method has a problem in that it cannot be applied to a substrate for forming a plating circuit because there are restrictions on the material of the substrate to be used, and a good roughened surface cannot be obtained for, for example, an amorphous glass substrate.

The present invention provides a method for manufacturing a substrate for plating circuit formation, on which a strong metal film can be formed by plating, even on amorphous glass substrates on which it is difficult to form a metal film by conventional plating methods. The object of the present invention is to provide a method for manufacturing a wiring board using a substrate.

(Means for Solving the 8 Problems) The present invention provides the following method:
A method for manufacturing a plated circuit forming substrate that removes only the phase portion with a low content of 8i02, and a phase splitting component that forms a phase splitting glass by heat treatment is applied to the surface of an insulating substrate, and then heat treatment is performed to remove the phase part containing 81o2. After phase separation into a phase with a high content of SiO2 and a phase with a low content of SiO2, only the portion with a low content of 5i02 is removed to form a board for forming a fixed circuit, and then a conductive circuit is formed on the board by a plating method. The present invention relates to a method of manufacturing a wiring board that forms a wiring board.

In the present invention, the insulating substrate is not particularly limited as long as it is insulative, but it is preferable to use a glass substrate and a ceramic substrate such as alumina or mullite. Although the glass substrate is amorphous, it is insulating.

It is preferable to use a quartz substrate because it has excellent heat resistance and a low dielectric constant.

The phase splitting component that forms phase splitting glass by heat treatment is 9.
For example, the main component is Sio2, and a mixture of this and an alkali metal such as lithium or sodium, an oxide or salt of these alkali metals, or a mixture of these with boron, unoxidized material, halic acid or borate is used. It will be done.

The phase separation component can be applied by dipping or brushing.

There are methods such as printing, but the present invention is not limited to these methods.

The heat treatment after applying the phase separation component is preferably carried out in the atmosphere using an ordinary electric furnace. Further, the temperature is appropriately determined depending on the composition of the 9-separated phase components.

To remove only the portion of the phase with low SiO
It is preferable to immerse in a low concentration acid such as dilute sulfuric acid or dilute nitric acid, and it is more preferable to use mechanical vibration using an ultrasonic vibrator or the like.

There are no restrictions on the method of plating on the plating circuit forming substrate, and conventionally known methods such as sensitizing the surface of the plating circuit forming substrate with tin chloride, palladium chloride, etc.
After activation, plating with nickel or the like may be applied.

(Example) The present invention will be explained in detail below.

Example 1 Sodium hydrogen carbonate (NaHCO3, manufactured by Wako Tsumugi Pharmaceutical Co., Ltd.).

Reagent special grade) 10.99. Hydrolic acid (Hs BO3, manufactured by Wako Tsumugi Pharmaceutical, special grade reagent) 19.69 and silica sand (Kanto Chemical System) 3
5 and 09 were weighed, mixed uniformly, placed in a platinum crucible, and held at 1450° C. for 3 hours in an electric furnace to melt. Thereafter, it was rapidly cooled, and then the melt was ground in an agate ball mill to obtain a phase-separated component powder with an average particle size of 2 μm.

1.89 g of ethyl cellulose (Wako Tsumugi Pharmaceutical Co., Ltd., 45Cp) and 12 g of terpineol (Wako Tsumugi Pharmaceutical Co., Ltd., reagent grade 1) were added to 30 g of the obtained phase-separated component powder and mixed uniformly with a crusher (automatic mixer). A phase separation component paste was obtained.

Next, the amount obtained above was applied to the surface of an alumina substrate (manufactured by Hitachi Chemical Co., Ltd., trade name: Harox, product name 552) with dimensions of soxsom square, thickness of 1 mm, and purity of 96 cm and a quartz plate of the same dimensions as above. The phase component paste was screen printed to a thickness of 8 μm, dried, placed in an electric furnace, heated to 450° C. at a heating rate of 5° C./min, and held at 450° C. for 1 hour to remove the binder. After that, the temperature was raised to 900 °C at a temperature increase rate of 15 °C/min, held at 900 °C for 10 minutes to bake the phase separation component paste, and further lowered to 700 °C at a temperature decrease rate of 10 °C/min. Hold at ℃ for 3 hours to remove SiO
The mixture was separated into a phase containing a large amount of SiO2 and a phase containing a small amount of SiO2, and then cooled in a furnace. After cooling, the plating circuit was heated to 60'C and immersed in HCl with a concentration of IN for 24 hours to remove (elute) the phase with low 5i02 content, and then ultrasonically cleaned in pure water for 5 minutes to complete the plating circuit. A substrate for formation was obtained.

Electroless steel plating (manufactured by Hitachi Chemical Co., Ltd., trade name Cu5t 2000 was used) on the surface of the obtained board for forming a matte circuit.
This was carried out for 4 hours, and a copper coating was applied to the entire surface to a thickness of 8 μm.

Next, a resist film is formed on the copper film by a commonly known method,
Through steps such as exposure, development, etching, and peeling off of the resist film, a wiring board with conductor wiring having dimensions of 2×2 m was obtained.

The adhesion strength of the resulting wiring board was measured.

Both the alumina substrate and 9 quartz substrates showed good values of Z, Okg/ran2 or more.

Example 2 Sodium hydrogen carbonate (NaHCCll, manufactured by Wako Tsumugi Pharmaceutical Co., Ltd.).

Reagent special grade) 13.69. 35.6 g of phosphoric acid (H3BO3, manufactured by Wako Tsumugi Pharmaceutical Co., Ltd., reagent grade) and silica sand (Kanto Chemical Number) 25
9 was weighed, mixed uniformly, placed in a platinum crucible, and held at 1150° C. for 3 hours in an electric furnace to melt. Thereafter, it was rapidly cooled and ground in the same manner as in Example 1 to obtain a phase-separated component powder, which was further made into a paste to obtain a phase-separated component paste.

This phase separation component paste was screen printed to a thickness of 6 μm on the surfaces of the alumina substrate and quartz substrate used in Example 1.
After drying, it was placed in an electric furnace, heated to 450°C at a rate of 5°C/min, and held at 450°C for 1 hour to remove the binder. Thereafter, the temperature was raised to 800°C at a temperature increase rate of 15°C/min and held at SOO°C for 10 minutes to bake the phase separation component paste.

Further, the temperature was lowered to 5506C4 at a cooling rate of 10°C/min, and held at 550°C for 2 hours to cause phase separation into a phase with a high content of 5in2 and a phase with a low content of 5i01.

Then it was cooled in the oven.

Thereafter, a plating circuit forming substrate was obtained through the same steps as in Example 1, and copper plating was further performed to obtain a wiring board.

The adhesion strength of the resulting wiring board was measured.

2.0 kg/rran for both alumina substrate and 9 quartz substrates
The results showed good results.

Example 3 Hydrogen carbonate) IJum (NaHcOsl manufactured by Wako Tsumugi Pharmaceutical Co., Ltd.)

Reagent special grade) 10.89 and silica sand (Kanto chemical number) 46.0
Weigh 9, mix it evenly, and then put it in a platinum crucible.

It was held at 1150° C. for 3 hours in an electric furnace to melt it.

Thereafter, it was rapidly cooled and ground in the same manner as in Example 1 to obtain a phase-separated component powder, which was further made into a paste to obtain a phase-separated component paste.

This phase separation component paste was screen printed to a thickness of 6 μm on the surfaces of the alumina substrate and quartz substrate used in Example 1.
After drying, put it in an electric furnace and heat it for 450' at a heating rate of 5°C/min.
The temperature was raised at C-1 and held at 450°C for 1 hour to remove the binder. After this, the temperature was increased to 870°C at a heating rate of 15°C/min.
The temperature was raised to 870°C for 10 minutes to bake the phase separation component paste.

The temperature was further lowered to 700℃ at a cooling rate of 10℃/min, and 7
After holding at 00℃ for 1 hour, the phase with high SiO2 content and S
Phase separation into a phase with low iO2 content.

Then it was cooled in the oven.

Thereafter, a plating circuit forming substrate was obtained through the same steps as in Example 1, and copper plating was further performed to obtain a wiring board.

The adhesion strength of the resulting wiring board was measured.

All of the alumina substrates and 9 five-English substrates had values of 2.0 kg/m'' or more, which were good.

Comparative Example 1 A glazed substrate with an amorphous glass layer formed on an alumina substrate (Hitachi Chemical) and a quartz substrate were heated at 20°C.
After holding it in water and immersing it in hydrofluoric acid (HF, Wako Tsumugi Co., Ltd., reagent), and washing it thoroughly in pure water, electroless copper plating was performed in the same manner as in Example 1 to obtain a wiring board. Ta.

When the obtained wiring boards were observed, many bulges were observed in the non-copper plating areas and on the surface of 9 for both the glazed substrates 1 and 5, and it was not possible to evaluate the adhesion.

(Effects of the Invention) According to the present invention, it is possible to form a strong metal film on an amorphous glass substrate, on which it has been difficult to form a metal film using a plating method, like ceramics. A circuit-forming substrate and a wiring board using the substrate can be obtained.

Claims (2)

[Claims] 1. A phase splitting component that forms phase splitting glass is applied to the surface of the insulating substrate by heat treatment, and then heat treatment is performed to form SiO_2.
A method for manufacturing a plated circuit board, which comprises separating the phase into a phase with a high content of SiO_2 and a phase with a low content of SiO_2, and then removing only the portion of the phase with a low content of SiO_2. 2. A phase splitting component that forms phase splitting glass is applied to the surface of the insulating substrate by heat treatment, and then heat treatment is performed to form SiO_2.
After phase separation into a phase with a high content of SiO_2 and a phase with a low content of SiO_2, only the portion of the phase with a low content of SiO_2 is removed to form a plated circuit forming substrate. A method for manufacturing a wiring board, characterized by forming a conductor circuit by a pinning method.