JPH01300572A - Optically driven semiconductor device - Google Patents
Optically driven semiconductor deviceInfo
- Publication number
- JPH01300572A JPH01300572A JP63130881A JP13088188A JPH01300572A JP H01300572 A JPH01300572 A JP H01300572A JP 63130881 A JP63130881 A JP 63130881A JP 13088188 A JP13088188 A JP 13088188A JP H01300572 A JPH01300572 A JP H01300572A
- Authority
- JP
- Japan
- Prior art keywords
- light
- semiconductor device
- plate
- driven semiconductor
- outside
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 230000003287 optical effect Effects 0.000 abstract description 4
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 230000000903 blocking effect Effects 0.000 description 8
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
Landscapes
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は光駆動型半導体装置に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a light-driven semiconductor device.
第２図は従来の光駆動型半導体装置を示す断面図で、同
図において１は半導体受光素子、２はダイパッド２ａお
よび外部リード２ｂからなるリードフレームで、前記半
導体受光素子１はこのダイパッド２ａ上に固着され、金
属細線３により表面電極（図示せず）と前記外部リード
２ｂとが接続されている。４は光透過性板で、この光透
過性板は石英ガラスによって形成され、半導体受光素子
１の受光部１ａを覆いかつこの受光部１ａとの間に空隙
５が形成されるよう接着剤６によって半導体受光素子１
に接着されている。また、石英ガラスは可視波長域から
紫外域までの波長を有する光に対して透過性が良好で、
例えば外部からの光量ニ応じてシャッタースピードや絞
り量を調節するカメラ用の半導体装置、あるいは校外線
によシメモリ消去可能な半導体装置（通称ｇｐＲｏＭ）
に使用されている。なお、７はパッケージとしての封止
樹脂である。FIG. 2 is a cross-sectional view showing a conventional optically driven semiconductor device. In the figure, 1 is a semiconductor light receiving element, 2 is a lead frame consisting of a die pad 2a and an external lead 2b, and the semiconductor light receiving element 1 is placed on this die pad 2a. A thin metal wire 3 connects a surface electrode (not shown) to the external lead 2b. Reference numeral 4 denotes a light-transmitting plate, which is made of quartz glass, covers the light-receiving part 1a of the semiconductor light-receiving element 1, and is bonded with adhesive 6 so as to form a gap 5 between the light-receiving part 1a and the light-receiving part 1a. Semiconductor photodetector 1
is glued to. In addition, quartz glass has good transparency for light with wavelengths from the visible wavelength range to the ultraviolet range,
For example, a semiconductor device for a camera that adjusts the shutter speed and aperture amount depending on the amount of light from the outside, or a semiconductor device whose memory can be erased by an outside line (commonly known as gpRoM)
used in Note that 7 is a sealing resin serving as a package.
このように構成された従来の光駆動型半導体装置におい
ては、光透過性板４を通して外部から光が入射されると
、それを電気信号に変え、その信号により外部回路を駆
動する。In the conventional light-driven semiconductor device configured as described above, when light is incident from the outside through the light-transmitting plate 4, it is converted into an electrical signal, and the external circuit is driven by the signal.
しかるに、このように構成された従来の光駆動型半導体
装置においては、光透過板４を透過する光の量によシ動
作されるだけであり適用範囲が狭く、この光駆動型半導
体装置を特定波長の光によつて動作させるには装置外部
に光フィルターを取付けなければならなかった。However, in the conventional light-driven semiconductor device configured as described above, the operation is only dependent on the amount of light transmitted through the light transmitting plate 4, and the range of application is narrow, and it is difficult to specify this light-driven semiconductor device. In order to operate with light at different wavelengths, an optical filter had to be attached to the outside of the device.
本発明に係る光駆動型半導体装置は、パッケージの光透
過部にフィルターを配設したものである。The optically driven semiconductor device according to the present invention has a filter disposed in the light transmitting portion of the package.
特定波長の光によって動作される光駆動型半導体装置を
得ることができる。A light-driven semiconductor device operated by light of a specific wavelength can be obtained.
以下、その構成等を図に示す実施例により詳細に説明す
る。Hereinafter, its configuration and the like will be explained in detail with reference to embodiments shown in the drawings.
第１図は本発明に係る光駆動型半導体装置を示す断面図
で、同図において第２図で説明したものと同一もしくは
同等部材については同一符号を付し、ここにおいて詳細
な説明は省略する。同図において１１〜１３はフィルタ
ーとしての異なった光透過特性を有する光透過性板で、
これをビデオカメラに使用される白色調整用半導体装置
について説明する。この半導体装置には光拡散板、紫外
線遮断板、赤外線遮断板という三枚の異なった特性を有
する光透過性板が必要である。この場合には、赤外線遮
断板が一般に耐湿性が劣るため第１図において１１を赤
外線遮断板とし、１２を紫外線遮断板とし、１３を光拡
散板とする。すなわち、赤外線遮断板１１が半導体装置
の内部に配置されることになυ、湿気より保護されるこ
とになる。FIG. 1 is a cross-sectional view showing an optically driven semiconductor device according to the present invention. In the figure, the same or equivalent members as those explained in FIG. . In the same figure, 11 to 13 are light transmitting plates having different light transmission characteristics as filters,
This will be explained regarding a semiconductor device for white adjustment used in a video camera. This semiconductor device requires three light transmitting plates having different characteristics: a light diffusing plate, an ultraviolet blocking plate, and an infrared blocking plate. In this case, since infrared shielding plates generally have poor moisture resistance, in FIG. 1, 11 is an infrared shielding plate, 12 is an ultraviolet shielding plate, and 13 is a light diffusing plate. That is, since the infrared shielding plate 11 is placed inside the semiconductor device, it is protected from moisture.
また、紫外線遮断板１２は透明な接着剤（図示せず）で
赤外線遮断板１１に接着してもよいし、有機接着剤自体
が紫外線を遮断する性質をもつので、紫外線遮断板１２
０代わりに有機接着剤を赤外線遮断板１１上に塗布し、
これを介して光拡散板１３を赤外線遮断板１１上に接着
してもよい。なお、これら赤外線遮断板１１．紫外線遮
断板１２．光拡散板１３は樹脂によって形成されている
。Further, the ultraviolet blocking plate 12 may be adhered to the infrared blocking plate 11 with a transparent adhesive (not shown), or since the organic adhesive itself has the property of blocking ultraviolet rays, the ultraviolet blocking plate 12
0 instead, an organic adhesive is applied on the infrared shielding plate 11,
The light diffusing plate 13 may be bonded onto the infrared shielding plate 11 via this. Note that these infrared shielding plates 11. UV blocking plate 12. The light diffusing plate 13 is made of resin.
したがって、この半導体装置は単独で白色調整用の全機
能を有することになり、特定波長の光によって動作され
る光駆動型半導体装置が得られる。Therefore, this semiconductor device independently has all the functions for adjusting white color, and a light-driven semiconductor device that is operated by light of a specific wavelength is obtained.
なお、前記実施例では光透過性板を多層設け、必要な機
能をもたせたが、空隙５に適当な光透過特性を有する樹
脂を充填し、光透過性板の機能をもたせてもよい。また
、この空隙５に充填する樹脂と接着剤６とを同一のもの
としてもよい。In the above embodiment, multiple layers of light-transmitting plates were provided to provide the necessary functions, but the voids 5 may be filled with a resin having appropriate light-transmitting properties to provide the function of the light-transmitting plates. Further, the resin and the adhesive 6 filling the gap 5 may be the same.
以上説明したように本発明によれば、パッケージの光透
過部にフィルターを配設したため、特定波長の光によっ
て動作される光駆動型半導体装置を得ることができる。As described above, according to the present invention, since the filter is disposed in the light transmitting portion of the package, it is possible to obtain a light-driven semiconductor device that is operated by light of a specific wavelength.
したがって、取付けられるフィルターを選択することに
よ＃）種々の波長の光に対する特性を有する光駆動型半
導体装置を得られ、装置外部に光フィルターを取付ける
必要がなくなる。Therefore, by selecting the filter to be attached, it is possible to obtain a light-driven semiconductor device having characteristics for light of various wavelengths, and there is no need to attach an optical filter outside the device.
第１図は本発明に係る光駆動型半導体装置を示す断面図
、第２図は従来の光駆動型半導体装置を示す断面図であ
る。
１・・・・半導体受光素子、１ａ ・・・・受光部、７
・・・・封止樹脂、１１・・・・赤外線遮断板、１２・
・・・紫外線遮断板、１３・・・・光拡散板。FIG. 1 is a sectional view showing an optically driven semiconductor device according to the present invention, and FIG. 2 is a sectional view showing a conventional optically driven semiconductor device. 1... Semiconductor light receiving element, 1a... Light receiving section, 7
... Sealing resin, 11... Infrared shielding plate, 12.
...Ultraviolet blocking plate, 13...Light diffusion plate.
Claims (1)
型半導体装置において、前記光透過部にフィルターを配
設したことを特徴とする光駆動型半導体装置。What is claimed is: 1. A light-driven semiconductor device in which light enters through a light-transmitting part of a package, characterized in that a filter is disposed in the light-transmitting part.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63130881A JPH01300572A (en) | 1988-05-27 | 1988-05-27 | Optically driven semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63130881A JPH01300572A (en) | 1988-05-27 | 1988-05-27 | Optically driven semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01300572A true JPH01300572A (en) | 1989-12-05 |
Family
ID=15044877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63130881A Pending JPH01300572A (en) | 1988-05-27 | 1988-05-27 | Optically driven semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01300572A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5534725A (en) * | 1992-06-16 | 1996-07-09 | Goldstar Electron Co., Ltd. | Resin molded charge coupled device package and method for preparation thereof |
| JP2008078455A (en) * | 2006-09-22 | 2008-04-03 | Denso Corp | Car-mounted color sensor, and its manufacturing method |
-
1988
- 1988-05-27 JP JP63130881A patent/JPH01300572A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5534725A (en) * | 1992-06-16 | 1996-07-09 | Goldstar Electron Co., Ltd. | Resin molded charge coupled device package and method for preparation thereof |
| JP2008078455A (en) * | 2006-09-22 | 2008-04-03 | Denso Corp | Car-mounted color sensor, and its manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100300278B1 (en) | Optical device and image reading apparatus | |
| KR950000112B1 (en) | Semiconductor light-emitting device | |
| KR20190010777A (en) | Display apparatus and manufacturimg method thereof | |
| JPS61123288A (en) | Solid-state pick up device | |
| JPH01300572A (en) | Optically driven semiconductor device | |
| CN112185270A (en) | COB display module with interaction function, preparation method and display screen | |
| JP5802511B2 (en) | Optical sensor module and optical sensor | |
| JP2007048795A (en) | Semiconductor illuminance sensor | |
| JPH01305577A (en) | Semiconductor device | |
| JPS62190776A (en) | Photoelectric conversion device | |
| JPH0316466A (en) | Contact type image sensor | |
| JPH07226524A (en) | Photoelectric conversion device | |
| JPH04114456A (en) | Photoelectric converter | |
| JP3067460B2 (en) | Image input / output device | |
| JPH01304755A (en) | Optical semiconductor device | |
| JPS60103682A (en) | Resin-sealed type photoelectric conversion module | |
| JPS6297370A (en) | Image sensor | |
| JPH01262661A (en) | Solid-state image sensing device | |
| JPH04306883A (en) | Transparent resin-sealed type semiconductor device | |
| JP2687707B2 (en) | Light receiving semiconductor device and assembling method thereof | |
| JP2833972B2 (en) | Optical coupling device | |
| JPS62189883A (en) | Solid-state image pickup device | |
| JPH0586105B2 (en) | ||
| JPS6024077A (en) | Semiconductor device | |
| JPH0629568A (en) | Optical coupling element |