JPH0129320B2 - - Google Patents
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- Publication number
- JPH0129320B2 JPH0129320B2 JP58242956A JP24295683A JPH0129320B2 JP H0129320 B2 JPH0129320 B2 JP H0129320B2 JP 58242956 A JP58242956 A JP 58242956A JP 24295683 A JP24295683 A JP 24295683A JP H0129320 B2 JPH0129320 B2 JP H0129320B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- film
- sio
- forming
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010408 film Substances 0.000 claims description 70
- 239000007789 gas Substances 0.000 claims description 58
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 29
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 15
- 230000002950 deficient Effects 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 239000010409 thin film Substances 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 10
- 238000005546 reactive sputtering Methods 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
Description
【発明の詳細な説明】
（発明の技術分野）
この発明はマトリツクス駆動型の二重絶縁膜構
造の薄膜ELパネルの製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to a method for manufacturing a matrix-driven thin film EL panel having a double insulating film structure.
（技術的背景）
先ず、この発明の説明に入る前に、従来のEL
パネルの製造方法につき、第１図の断面図を用い
て説明する。(Technical background) First, before going into the explanation of this invention, let us first explain the conventional EL
The method for manufacturing the panel will be explained using the cross-sectional view of FIG.
従来方法では、透明なガラス基板１上にIn2O3
或いはSnO2等より成るストライプ状の透明電極
２を形成し、この透明電極２を有する基板面１ａ
上にスパツタ法によりSiO2膜３ａを形成し、次
いでこのSiO2膜３ａ上にSiとＮとＯの化合物薄
膜４ａを形成し、さらにこの化合物薄膜４ａ上に
絶縁性の優れたSi3N4膜５ａを形成し、この
Si3N4膜５ａ上に、ZnSを母体としMnを発光中心
とした発光層６を順次に形成する。 In the conventional method, In 2 O 3 is deposited on a transparent glass substrate 1.
Alternatively, a striped transparent electrode 2 made of SnO 2 or the like is formed, and the substrate surface 1a having this transparent electrode 2 is
A SiO 2 film 3a is formed thereon by a sputtering method, and then a compound thin film 4a of Si, N, and O is formed on this SiO 2 film 3a, and a Si 3 N 4 film with excellent insulating properties is further formed on this compound thin film 4a. A film 5a is formed, and this
On the Si 3 N 4 film 5a, a light emitting layer 6 having ZnS as a matrix and Mn as a light emitting center is sequentially formed.
次に、この発光層６上には前述の各膜の形成順
序とは逆の順序でSi3N4膜５ｂ、化合物薄膜４ｂ
及びSiO2膜３ｂ順次形成し、このSiO2膜３ｂ上
にAlよりなるストライプ状の背面電極７を透明
電極２と直角に交差するように、形成して配置さ
せている。 Next, on this light emitting layer 6, a Si 3 N 4 film 5b and a compound thin film 4b are formed in the reverse order of the formation of each film described above.
and SiO 2 film 3b are sequentially formed, and on this SiO 2 film 3b, a striped back electrode 7 made of Al is formed and arranged so as to cross the transparent electrode 2 at right angles.
この種のELパネルおいては、例えば、背面電
極７を順次にライン走査してマトリツクス表示を
行う時、小さな電圧変化に対する発光輝度の変化
を大きくしなければ、換言すれば、発光輝度−印
加電圧特性（以下Ｂ−Ｖ特性と称する）曲線の勾
配が急勾配でなければ、クロストークが生じてし
まい、これがため、走査電極数を多く、すなわ
ち、表示画素数を多く取れないということが知ら
れている。 In this type of EL panel, for example, when performing a matrix display by sequentially scanning lines on the back electrode 7, the change in luminance for a small voltage change must be made large; in other words, luminance - applied voltage. It is known that if the slope of the characteristic (hereinafter referred to as BV characteristic) curve is not steep, crosstalk will occur, and as a result, it is not possible to increase the number of scanning electrodes, that is, to increase the number of display pixels. ing.
しかしながら、このように従来方法で製造され
たELパネルでは、発光層６の両側を絶縁性に優
れたSi3N4膜５ａ及び５ｂで挟持した構造となつ
ているため、発光層６のSi3N4膜５ａ及び５ｂと
の界面には深いエネルギーレベルの界面状態を形
成出来ず、発光層６への電子の注入が少なく、緩
やかなアバランシエ現象を示し、発光輝度−印加
電圧特性曲線の勾配の急峻化が図れないという欠
点があつた。 However, in the EL panel manufactured by the conventional method, the light emitting layer 6 is sandwiched between Si 3 N 4 films 5a and 5b having excellent insulation properties on both sides, so that the Si 3 An interface state with a deep energy level cannot be formed at the interface with the N 4 films 5a and 5b, few electrons are injected into the light emitting layer 6, a gentle avalanche phenomenon occurs, and the slope of the luminance-applied voltage characteristic curve decreases. The drawback was that it could not be made steeper.
（発明の目的）
この発明の目的は、Ｂ−Ｖ特性曲線が急勾配と
なる構造のELパネルを容易に製造することが出
来るELパネルの製造方法を提供するにある。(Object of the Invention) An object of the present invention is to provide a method for manufacturing an EL panel that can easily manufacture an EL panel having a structure in which the BV characteristic curve is steep.
（発明の構成）
この目的の達成を図るため、この発明によれ
ば、発光層の両側の第一及び第二絶縁層の夫々
を、この発光層と各絶縁層との境界に深いレベル
の界面状態を形成する酸素欠損状態のSiO2膜を
追加した構造とし、酸素欠損状態のSiO2膜と、
絶縁性に優れたSi3N4膜と、In2O3或いはSnO2等
より成る透明電極及びAl等より成る背面電極の
夫々に対する密着性を良くするためのSiO2膜と
を、スパツタ法により、各絶縁層毎に同一真空槽
内でしかも供給ガスの量を変えるのみで、大気に
触れさせず連続して形成出来るようにしたことを
要旨とする。(Structure of the Invention) In order to achieve this object, according to the present invention, each of the first and second insulating layers on both sides of the light emitting layer is formed at a deep level interface at the boundary between the light emitting layer and each insulating layer. The structure has an additional SiO 2 film in an oxygen-deficient state that forms a state, and the SiO 2 film in an oxygen-deficient state
A Si 3 N 4 film with excellent insulating properties and a SiO 2 film to improve adhesion to a transparent electrode made of In 2 O 3 or SnO 2 , etc. and a back electrode made of Al etc. are made by sputtering. The gist of the invention is that each insulating layer can be formed continuously in the same vacuum chamber without exposure to the atmosphere by simply changing the amount of gas supplied.
（実施例の説明）
以下、図面により、この発明の実施例につき説
明する。(Description of Embodiments) Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第２図はこの発明のELパネルの製造方法の一
実施例を説明するために供する当該ELパネルの
略図的断面図である。尚、この図において、第１
図に示した構成成分と同様な構成成分に対しては
同一の符合を付して示す。 FIG. 2 is a schematic cross-sectional view of the EL panel provided for explaining one embodiment of the method for manufacturing the EL panel of the present invention. In addition, in this figure, the first
Components similar to those shown in the figures are indicated by the same reference numerals.
この実施例においては、第２図に示すように、
透明なガラス基板１上に複数本のストライプ状
の、In2O3或いはSnO2等より成る透明電極２を形
成した後、この透明電極２を有する基板面１ａ上
に、先ず、Siをターゲツトとし反応性スパツタ法
により第一絶縁層９ａを構成する各膜を同一真空
槽内で連続して設ける。これにつき説明する。 In this embodiment, as shown in FIG.
After forming a plurality of striped transparent electrodes 2 made of In 2 O 3 or SnO 2 on a transparent glass substrate 1, Si is first targeted on the substrate surface 1a having the transparent electrodes 2. Each film constituting the first insulating layer 9a is successively provided in the same vacuum chamber by a reactive sputtering method. This will be explained.
先ず、基板面１ａ上にArガスと適度な量のO2
ガスの混合ガス雰囲気でSiO2膜３ａを形成する。
このSiO2膜３ａは前述の透明電極２及びその後
に形成される絶縁性に優れたSi3N4膜５ａとの密
着性を高めるためのものであるから、その膜厚を
1000Å以下とすることが出来る。 First, Ar gas and a suitable amount of O 2 are placed on the substrate surface 1a.
The SiO 2 film 3a is formed in a mixed gas atmosphere.
This SiO 2 film 3a is intended to improve the adhesion with the transparent electrode 2 described above and the Si 3 N 4 film 5a with excellent insulating properties formed thereafter, so the film thickness is
The thickness can be set to 1000 Å or less.
次いで、この膜３ａ上に徐々にO2ガスの量を
減少させかつ同時にN2ガスを増加させながらSi
とＯとＮの化合物薄膜４ａを形成する。この場
合、基板１側のSiO2膜３ａから直接接Si3N4膜５
ａを形成すると、SiO2膜３ａが酸素欠損状態と
なる恐れがあるので、これら膜組成の急激な変化
を緩和するためにこの化合物薄膜４ａを設けるの
であるから、その膜厚は1000Å以下であつて良い
こと勿論であり、場合によつては、この化合物薄
膜４ａを実質的に取り除いても良い。 Next, Si is deposited on this film 3a while gradually decreasing the amount of O 2 gas and simultaneously increasing the amount of N 2 gas.
A compound thin film 4a of O and N is formed. In this case, the Si 3 N 4 film 5 is directly connected to the SiO 2 film 3a on the substrate 1 side.
If a is formed, there is a risk that the SiO 2 film 3a will be in an oxygen-deficient state, so this compound thin film 4a is provided to alleviate these rapid changes in the film composition, so its film thickness should be 1000 Å or less. Of course, it is possible to remove the compound thin film 4a, and in some cases, the compound thin film 4a may be substantially removed.
続いて、ついにはO2ガスを完全に排除しArガ
スと適度な量のN2ガスの混合ガス雰囲気中でこ
の化合物薄膜４ａ上にSi3N4膜５ａを形成する。
この膜５ａはELパネルの絶縁を行う機能を有し、
これがため、1000〜3000Å程度の膜厚とするのが
好適である。 Subsequently, the O 2 gas is finally completely excluded, and the Si 3 N 4 film 5a is formed on the compound thin film 4a in a mixed gas atmosphere of Ar gas and an appropriate amount of N 2 gas.
This film 5a has a function of insulating the EL panel,
Therefore, it is preferable to set the film thickness to about 1000 to 3000 Å.
続いて、急激にN2ガスを排気しO2ガスを少量
だけ注入してArガスとO2ガスの混合ガス雰囲気
中で酸素欠損状態のSiO2膜８ａを形成する。こ
の膜８ａは、以下説明するように、この膜８ａ上
に続いて形成される発光層６との境界に深いレベ
ルの界面状態を形成するためのものであり、その
膜厚を500〜3000Å程度とするのが好適である。 Next, the N 2 gas is rapidly exhausted and a small amount of O 2 gas is injected to form an oxygen-deficient SiO 2 film 8a in a mixed gas atmosphere of Ar gas and O 2 gas. As will be explained below, this film 8a is for forming a deep level interface state at the boundary with the light emitting layer 6 that is subsequently formed on this film 8a, and the film thickness is about 500 to 3000 Å. It is preferable that
この第一絶縁層９ａを構成する各膜の形成に当
り、Arガス、N2ガス及びO2ガスの量を変える方
法は、反応性スパツタ装置の排気装置により真空
槽内を常に排気しつつ、別個に設けたガス混合気
によりArガス、N2ガス及びO2ガスの混合比を変
えながら、所要のガスをこの真空槽内へ注入す
る。従つて、基板１側のSiO2膜３ａ、SiとＮと
Ｏの化合物薄膜４ａ、Si3N4膜５ａ及び酸素欠損
状態のSiO2膜８ａを同一真空槽内で大気に触れ
ること無く連続して順次に形成出来る。また、そ
の他の各膜の形成条件は所要に応じて好適な条件
を選定することが出来る。 In forming each film constituting the first insulating layer 9a, the method of changing the amounts of Ar gas, N 2 gas, and O 2 gas is to constantly evacuate the inside of the vacuum chamber using the exhaust device of the reactive sputtering device. The required gas is injected into this vacuum chamber while changing the mixing ratio of Ar gas, N 2 gas, and O 2 gas using a separately provided gas mixture. Therefore, the SiO 2 film 3a on the substrate 1 side, the Si, N, and O compound thin film 4a, the Si 3 N 4 film 5a, and the oxygen-deficient SiO 2 film 8a are successively deposited in the same vacuum chamber without being exposed to the atmosphere. can be formed sequentially. In addition, suitable conditions for forming each of the other films can be selected as required.
このようにして第一絶縁層９ａが形成された試
料を真空槽から取り出して、この酸素欠損状態の
SiO2膜８ａ上に、別の真空槽内での電子ビーム
蒸着法で、発光層６を形成する。この発光層６
は、例えば、ZnSを母体とし、0.3〜0.7重量％の
Mnを発光中心としてドープしたもので、106V／
cmの電界が印加されると黄橙色を発光するものと
することが出来るが、これに限定されず、他の色
を発光するものであつても良い。 The sample on which the first insulating layer 9a has been formed in this way is taken out of the vacuum chamber, and the oxygen-deficient state is
A light emitting layer 6 is formed on the SiO 2 film 8a by electron beam evaporation in a separate vacuum chamber. This light emitting layer 6
For example, ZnS is used as the matrix and 0.3 to 0.7 wt%
Doped with Mn as the luminescent center, 10 6 V/
When an electric field of cm is applied, it can emit yellow-orange light, but is not limited to this, and may emit other colors.
次に、この発光層６上に第二絶縁層９ｂを構成
する各膜をスパツタ法により同一真空槽内で連続
して設ける。これにつき説明する。 Next, each film constituting the second insulating layer 9b is successively provided on the light emitting layer 6 in the same vacuum chamber by sputtering. This will be explained.
この第二絶縁層９ｂの各層は上述した第一絶縁
層９ｂの膜と対称的配置となるように前述とは逆
の順序で形成する。すなわち、先ず、発光層６上
に、Arガスと少量のO2ガスの混合ガス雰囲気中
で酸素欠損状態のSiO2膜８ｂを形成する。次に、
O2ガスを排気しN2ガスを注入して、ArガスとN2
ガスの混合ガス中で、酸素欠損状態のSiO2膜８
ｂ上にSi3N4膜５ｂを形成する。さらに引続き、
徐々にO2ガスを注入しかつ同時にN2ガスを減少
して、このSi3N4膜５ｂ上に所要に応じSiとＮと
Ｏの化合物薄膜４ｂを形成する。そして最終的に
Arガスと豊富なO2の混合ガス中で、この化合物
薄膜４ｂが形成されていない場合にはSi3N4膜上
に又は化合物薄膜４ｂが形成されている場合には
この膜４ｂ上に背面電極側のSiO2膜３ｂを形成
する。 Each layer of the second insulating layer 9b is formed in the reverse order to the above-described order so as to be arranged symmetrically with the first insulating layer 9b described above. That is, first, an oxygen-deficient SiO 2 film 8b is formed on the light emitting layer 6 in a mixed gas atmosphere of Ar gas and a small amount of O 2 gas. next,
Exhaust O2 gas and inject N2 gas, then remove Ar gas and N2.
SiO 2 film in an oxygen-deficient state in a gas mixture 8
A Si 3 N 4 film 5b is formed on the Si 3 N 4 film 5b. Continuing further,
By gradually injecting O 2 gas and decreasing N 2 gas at the same time, a compound thin film 4b of Si, N, and O is formed on this Si 3 N 4 film 5b as required. and finally
In a mixed gas of Ar gas and abundant O 2 , the rear surface is formed on the Si 3 N 4 film when the compound thin film 4b is not formed, or on this film 4b when the compound thin film 4b is formed. A SiO 2 film 3b on the electrode side is formed.
この場合、この第二絶縁層９ｂの各膜の形成条
件を第一絶縁層９ａの各膜の条件と同一とするこ
とが出来る。そして、これら第二絶縁層の各膜も
同一真空槽内で大気に触れること無く連続して順
次に形成出来る。 In this case, the conditions for forming each film of the second insulating layer 9b can be the same as the conditions for forming each film of the first insulating layer 9a. Each film of the second insulating layer can also be successively formed in the same vacuum chamber without being exposed to the atmosphere.
このようにして得られた試料を真空槽から取り
出して、SiO2膜３ｂ上に、例えば、Al等からな
る複数本のストライプ状の背面電極７を透明電極
２と直角に交差するように被着形成し、その後に
所要に応じて必要な処理を行つて第２図に示すよ
うな構造のELパネルを得る。 The sample thus obtained is taken out of the vacuum chamber, and a plurality of striped back electrodes 7 made of, for example, Al are deposited on the SiO 2 film 3b so as to cross the transparent electrode 2 at right angles. After that, necessary processing is performed as required to obtain an EL panel having a structure as shown in FIG.
この第二絶縁層の形成に当り、発光層６上に反
応性スパツタ法で酸素欠損状態のSiO2膜８ｂを
形成したが、スパツタリングにより発光層６の表
面が損傷し、浅いレベルの界面状態を形成するこ
とがあるので、所要により、この発光層６上に発
光層と同一の真空槽中で電子ビーム蒸着法によ
り、例えば、Y2O3、Ta2O5等を蒸着しておくと
良い。 In forming this second insulating layer, an oxygen-deficient SiO 2 film 8b was formed on the light-emitting layer 6 by a reactive sputtering method, but the sputtering damaged the surface of the light-emitting layer 6 and caused a shallow level interface state. If necessary, Y 2 O 3 , Ta 2 O 5 , etc. may be vapor-deposited on the light-emitting layer 6 by electron beam evaporation in the same vacuum chamber as the light-emitting layer. .
また、このようにして得られた構造のELパネ
ルでは、発光層６の両側であつてこの発光層６と
絶縁性に優れたSi3N4膜との界面間に酸素欠損状
態のSiO2膜８ａ，８ｂを設けてあるので、この
界面に深いレベルの界面状態が形成出来る。従つ
て、発光層への電子の注入も多くなり、Ｂ−Ｖ特
性曲線の勾配も急峻化するので、走査電極数すな
わち表示画素数を多く取れるようになる。 In addition, in the EL panel having the structure obtained in this manner, an oxygen-deficient SiO 2 film is formed on both sides of the light emitting layer 6 and between the interface between the light emitting layer 6 and the Si 3 N 4 film having excellent insulating properties. Since 8a and 8b are provided, a deep level interface state can be formed at this interface. Therefore, more electrons are injected into the light-emitting layer, and the slope of the BV characteristic curve becomes steeper, so that the number of scanning electrodes, that is, the number of display pixels can be increased.
（発明の効果）
上述した説明からも明らかなように、この発明
によれば、反応性スパツタ法により混合ガスの混
合比を変えることにより、発光層の両側の第一及
び第二絶縁層、特に、絶縁性に優れたSi3N4膜及
び、発光層との界面に深いレベルの界面状態を形
成するための、酸素欠損のSiO2膜の連続層を各
絶縁層毎にそれぞれ別個の、同一真空槽内で連続
して形成するのであるから、急勾配のＢ−Ｖ特性
曲線のELパネルを製造することが出来る。(Effects of the Invention) As is clear from the above description, according to the present invention, by changing the mixing ratio of the mixed gas by the reactive sputtering method, the first and second insulating layers on both sides of the light emitting layer, especially , a Si 3 N 4 film with excellent insulating properties, and a continuous layer of an oxygen-deficient SiO 2 film to form a deep interfacial state at the interface with the light-emitting layer, each in a separate and identical layer for each insulating layer. Since it is formed continuously in a vacuum chamber, it is possible to manufacture an EL panel with a steep BV characteristic curve.
さらに、絶縁層を同一真空槽内で大気に接触さ
せることなく形成することが出来るので、従来の
ような真空−大気圧という操作を必要せず、従つ
て、ELパネル製造工程の大幅な低減を図ること
が出来、製造が簡単、容易となりかつELパネル
を安価に製造することが出来る。 Furthermore, since the insulating layer can be formed in the same vacuum chamber without contacting the atmosphere, there is no need for the conventional vacuum-atmospheric operation, which significantly reduces the EL panel manufacturing process. It is possible to easily and easily manufacture the EL panel, and it is possible to manufacture the EL panel at low cost.
第１図は従来のELパネルの製造方法の説明に
供する当該ELパネルの断面図、第２図はこの発
明のELパネルの製造方法の説明に供する当該EL
パネルの断面図である。
１……透明基板、１ａ……透明基板の基板面、
２……透明電極、３ａ，３ｂ……SiO2膜、４ａ，
４ｂ……化合物薄膜、５ａ，５ｂ……Si3N4膜、
６……発光層、７……背面電極、８ａ，８ｂ……
酸素欠損状態のSiO2膜、９ａ……第一絶縁層、
９ｂ……第二絶縁層。
Figure 1 is a cross-sectional view of the EL panel used to explain the conventional method of manufacturing the EL panel, and Figure 2 is a cross-sectional view of the EL panel used to explain the method of manufacturing the EL panel of the present invention.
It is a sectional view of a panel. 1...Transparent substrate, 1a...Substrate surface of transparent substrate,
2...Transparent electrode, 3a, 3b...SiO 2 film, 4a,
4b... Compound thin film, 5a, 5b... Si 3 N 4 film,
6...Light emitting layer, 7...Back electrode, 8a, 8b...
SiO 2 film in an oxygen-deficient state, 9a...first insulating layer,
9b...Second insulating layer.
Claims (1)
第一絶縁層と、発光層と、第二絶縁層と、背面電
極とを順次に具える二重絶縁膜構造のELパネル
を製造するに当り、 前記第一及び第二絶縁層を真空槽内でSiをター
ゲツトとして反応性スパツタ法により夫々別個に
形成し、 前記第一絶縁層の形成工程は、前記透明基板の
透明電極が形成された基板面上に、Arガスと豊
富なO2の混合ガス中でSiO2膜を形成し、徐々に
O2ガスの量を減じ同時にN2ガスを増加して所要
に応じSiとＮとＯの化合物薄膜を形成し、ついに
はArガスとN2ガスの混合ガス中でSi3N4膜を形
成し、さらにN2ガスを排気し少量のO2ガスを急
激に注入してArガスと少量のO2ガスの混合ガス
雰囲気中で酸素欠損状態のSiO2膜を形成する順
次の連続工程とから成り、 前記第二絶縁層の形成工程は、酸素欠損状態の
前記SiO2膜に形成した発光層上に、Arガスと少
量のO2ガスの混合ガス雰囲気中で酸素欠損状態
のSiO2膜を形成し、O2ガスを排気しN2ガスを注
入して、ArガスとN2ガスの混合ガス中で、
Si3N4膜を形成し、さらに徐々にO2ガスを注入し
同時にN2ガスを減少して所要に応じSiとＮとＯ
の化合物薄膜を形成し、ついにはArガスと豊富
なO2の混合ガス中でSiO2膜を形成する順次の連
続工程とから成る ことを特徴とするELパネルの製造方法。[Claims] 1. A double insulating film structure comprising a first insulating layer, a light emitting layer, a second insulating layer, and a back electrode in sequence on the surface of a transparent substrate on which a transparent electrode is formed. In manufacturing the EL panel, the first and second insulating layers are formed separately in a vacuum chamber by a reactive sputtering method using Si as a target, and the step of forming the first insulating layer includes forming the first insulating layer on the transparent substrate. A SiO 2 film is formed on the substrate surface on which the transparent electrode is formed in a mixed gas of Ar gas and abundant O 2 , and gradually
Reduce the amount of O 2 gas and increase N 2 gas at the same time to form a compound thin film of Si, N, and O as required, and finally form a Si 3 N 4 film in a mixed gas of Ar gas and N 2 gas. Then, the N 2 gas is evacuated and a small amount of O 2 gas is rapidly injected to form an oxygen-deficient SiO 2 film in a mixed gas atmosphere of Ar gas and a small amount of O 2 gas. In the step of forming the second insulating layer, an oxygen-deficient SiO 2 film is formed on the light-emitting layer formed on the oxygen-deficient SiO 2 film in a mixed gas atmosphere of Ar gas and a small amount of O 2 gas. in a mixed gas of Ar gas and N2 gas by forming, evacuating O2 gas and injecting N2 gas.
After forming a Si 3 N 4 film, O 2 gas is gradually injected and N 2 gas is reduced at the same time to form Si, N and O as required.
1. A method for manufacturing an EL panel, comprising sequential steps of forming a thin compound film of 1, and finally forming a SiO 2 film in a mixed gas of Ar gas and rich O 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58242956A JPS60134277A (en) | 1983-12-22 | 1983-12-22 | Manufacture of el panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58242956A JPS60134277A (en) | 1983-12-22 | 1983-12-22 | Manufacture of el panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60134277A JPS60134277A (en) | 1985-07-17 |
| JPH0129320B2 true JPH0129320B2 (en) | 1989-06-09 |
Family
ID=17096723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58242956A Granted JPS60134277A (en) | 1983-12-22 | 1983-12-22 | Manufacture of el panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60134277A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS622495A (en) * | 1985-06-26 | 1987-01-08 | ホ−ヤ株式会社 | Manufacture of thin film el element |
| JP2531686B2 (en) * | 1986-07-03 | 1996-09-04 | 株式会社小松製作所 | Color display device |
| JPH0740515B2 (en) * | 1986-08-13 | 1995-05-01 | 株式会社日立製作所 | Thin film light emitting device |
| JPH07118391B2 (en) * | 1987-10-19 | 1995-12-18 | シャープ株式会社 | Thin film electroluminescence device |
| JPH01177898U (en) * | 1988-06-03 | 1989-12-19 |
-
1983
- 1983-12-22 JP JP58242956A patent/JPS60134277A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60134277A (en) | 1985-07-17 |
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