JPH01290290A - Method and apparatus for baking thick film paste - Google Patents
Method and apparatus for baking thick film pasteInfo
- Publication number
- JPH01290290A JPH01290290A JP12113188A JP12113188A JPH01290290A JP H01290290 A JPH01290290 A JP H01290290A JP 12113188 A JP12113188 A JP 12113188A JP 12113188 A JP12113188 A JP 12113188A JP H01290290 A JPH01290290 A JP H01290290A
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- firing
- ozone
- substrate
- film paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 59
- 238000010438 heat treatment Methods 0.000 claims abstract description 23
- 238000001816 cooling Methods 0.000 claims abstract description 9
- 238000010304 firing Methods 0.000 claims description 67
- 239000000758 substrate Substances 0.000 claims description 44
- 238000002360 preparation method Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims 1
- 150000002902 organometallic compounds Chemical class 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 44
- 239000012535 impurity Substances 0.000 abstract description 19
- 239000010409 thin film Substances 0.000 abstract description 18
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 17
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005273 aeration Methods 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は厚膜ペーストを焼成する事により厚膜を作成
する厚膜ペースト焼成方法及び装置に関するものである
。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a thick film paste firing method and apparatus for creating a thick film by firing a thick film paste.
第６図は、例えば伯東株式会社カタログに示された従来
の連続式厚膜ペースト焼成装置の断面図であり、図にお
いて１は焼成反応室、２は焼成用赤外線加熱光源、３は
基板、４は基板搬送装置、８は排気装置、１０は清浄空
気供給管である。また焼成装置での焼成工程は、５過程
に分類できる。FIG. 6 is a cross-sectional view of a conventional continuous thick film paste firing apparatus shown in, for example, the Hakuto Co., Ltd. catalog. In the figure, 1 is a firing reaction chamber, 2 is an infrared heating light source for firing, 3 is a substrate, and 4 8 is a substrate transfer device, 8 is an exhaust device, and 10 is a clean air supply pipe. Furthermore, the firing process in the firing apparatus can be classified into five steps.
即ち、基板導入過程１１．焼成準備加熱過程１２゜焼成
加熱過程１３．冷却過程１４．基板搬出過程１５である
。第７図は、上記厚膜ペースト焼成装置内における基板
及び雰囲気の温度変化を示す図であり、図において、番
号は第６図の同番号の過程と対応している。なお第６図
中の斜線は断熱プロックを示している。That is, the substrate introduction process 11. Firing preparation heating process 12° Firing heating process 13. Cooling process 14. This is a substrate unloading process 15. FIG. 7 is a diagram showing temperature changes of the substrate and atmosphere in the thick film paste firing apparatus, and in the figure, the numbers correspond to the processes with the same numbers in FIG. 6. Note that the diagonal lines in FIG. 6 indicate insulation blocks.
次に動作について説明する。Next, the operation will be explained.
基板３は例えばベルト式の基板搬送袋Ｗ４により装置内
に搬入される。焼成用赤外線加熱光源２で設定温度まで
加熱され、焼成反応室１内を通過する。焼成後、基板３
は徐々に冷却され搬出される。焼成反応室１内には清浄
空気が清浄空気供給管１０より供給され焼成反応に寄与
している。焼成時には清浄空気中の酸素と厚膜ペースト
中の有機物質等とが反応し、ガスが発生するのでこのガ
スは排気装置８により排気する。上述の工程で、基板３
の温度は第７図に示すように変化する。The substrate 3 is carried into the apparatus using, for example, a belt-type substrate carrying bag W4. It is heated to a set temperature by the infrared heating light source 2 for firing, and passes through the inside of the firing reaction chamber 1. After baking, substrate 3
is gradually cooled and transported. Clean air is supplied into the firing reaction chamber 1 from a clean air supply pipe 10 and contributes to the firing reaction. During firing, oxygen in clean air reacts with organic substances in the thick film paste to generate gas, which is exhausted by an exhaust device 8. In the above process, the substrate 3
The temperature changes as shown in FIG.
従来の厚膜ペースト焼成方法及び装置で作成された厚膜
の表面には、焼成反応により発生した不純物が薄膜とな
って存在している。この不純物薄膜は膜質の低下をもた
らすのみならず、以後の工程に存在するレジスト塗布時
のレジストと金属膜とのぬれ性の低下、厚膜エツチング
時のエツチング時間のばらつき、出来上がりパターン巾
の精度の低下等、大きな悪影響を与えるという問題点が
あった。Impurities generated by the firing reaction exist in the form of a thin film on the surface of a thick film created using a conventional thick film paste firing method and apparatus. This impurity thin film not only causes a decline in film quality, but also reduces the wettability between the resist and metal film during resist coating in subsequent steps, causes variations in etching time during thick film etching, and impairs the accuracy of the finished pattern width. There was a problem in that it had a major negative impact, such as a decline in performance.
この発明は上記のような問題点を解消するためになされ
たもので、作成される厚膜の膜質が向上するのみならず
以降のバターニング工程でもトラブルの発生しないよう
な厚膜を作成できる厚膜ペースト焼成方法及び装置を得
ることを目的とする。This invention was made to solve the above-mentioned problems, and it not only improves the quality of the thick film that is created, but also improves the thickness of the film so that it does not cause trouble during the subsequent buttering process. The object of the present invention is to obtain a method and apparatus for firing a membrane paste.
この発明に係る厚膜ペースト焼成方法は、厚膜ペースト
焼成装置内の焼成工程である基板導入過程、焼成準備加
熱過程、焼成加熱過程、冷却過程及び基板搬出過程のう
ち１過程あるいは複数過程をオゾン含有雰囲気下でおこ
なうようにしたものである。また、この発明に係る厚膜
ペースト焼成装置は、オゾン含有気体を供給できるオゾ
ン発生装置と、該オゾン発生装置で発生されたオゾンを
基板導入過程、焼成準備加熱過程、焼成加熱過程。The thick film paste firing method according to the present invention includes one or more of the firing steps in the thick film paste firing apparatus, including a substrate introduction process, a firing preparation heating process, a firing heating process, a cooling process, and a substrate unloading process. The experiment was carried out in a containing atmosphere. Further, the thick film paste firing apparatus according to the present invention includes an ozone generator capable of supplying an ozone-containing gas, and the ozone generated by the ozone generator is applied to a substrate introduction process, a firing preparation heating process, and a firing heating process.
冷却過程、基板搬出過程のうち１過程あるいは複数過程
で被加工物に対して散気するオゾン散気装置とを備えた
ものである
〔作用〕
この発明における厚膜ペースト焼成方法及び装置では、
厚膜ペースト焼成装置内においてオゾンを基板表面上に
供給できるようにしたから、厚膜ペースト中の不純物薄
膜成分あるいは焼成後の厚膜上の不純物薄膜が、オゾン
が熱分解を受けて発生した活性な酸素原子あるいはオゾ
ンと酸化反応を起こし、分解除去されるので、良質な厚
膜を作成する事ができる。It is equipped with an ozone diffuser that diffuses air to the workpiece during one or more of the cooling process and the substrate unloading process. [Function] The thick film paste firing method and apparatus of the present invention include:
Since ozone can be supplied onto the substrate surface in the thick film paste firing equipment, the impurity thin film components in the thick film paste or the impurity thin film on the thick film after firing can be activated by thermal decomposition of ozone. It causes an oxidation reaction with oxygen atoms or ozone and is decomposed and removed, making it possible to create a high-quality thick film.
以下、この発明の一実施例を図について説明する。第１
図においてｌは焼成反応室、２は焼成用赤外線加熱光源
、３は基板、４は基板搬送装置、５はオゾン発生装置、
６はオゾン散気装置、７はオゾン回収囲い、８は排気装
置、９は予備加熱用赤外線光源、１０は清浄空気供給管
である。なお図中の斜線は断熱ブロックを示している。An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, l is a firing reaction chamber, 2 is an infrared heating light source for firing, 3 is a substrate, 4 is a substrate transport device, 5 is an ozone generator,
6 is an ozone diffuser, 7 is an ozone recovery enclosure, 8 is an exhaust device, 9 is an infrared light source for preheating, and 10 is a clean air supply pipe. Note that diagonal lines in the figure indicate insulation blocks.
第２図は、第１図に示した実施例における基板の温度変
化を示したものであり、図において、１６はオゾン雰囲
気範囲を示している。１１〜１５は第７図の同一符号と
同一のものである。FIG. 2 shows the temperature change of the substrate in the embodiment shown in FIG. 1, and in the figure, 16 indicates the ozone atmosphere range. 11 to 15 are the same as the same reference numerals in FIG.
次に動作について説明する。Next, the operation will be explained.
第１図の実施例は厚膜作成後に表面に発生した不純物薄
膜を冷却過程１４中にオゾンを供給する事により除去す
るものである。厚膜ペーストを塗布した基板３は、例え
ばベルト式の基板搬送装置４で厚膜ペースト焼成装置内
に搬入される。焼成用赤外線加熱光源２の設定温度まで
加熱され焼成反応室１内を通過する。焼成反応が終了し
基板が徐々に冷却されていき、基板温度が１００〜４０
０℃望ましくは２００〜３００℃となる位置に基板の温
度変化に対応して流速分布を持たせた微細口のついたオ
ゾンガス供給面を持ったオゾン散気袋Ｗ６を設定しであ
る。オゾンはこのオゾン散気装置６により集中的に基板
表面に供給される。第８図は温度と発生酸素原子濃度と
の関係の一例を基板へのオゾンガス到達時間別に示した
ものである。供給オゾン濃度、到達時間は標準状態の値
を示しである。ここで、予備加熱用赤外線光源９により
基板及び雰囲気温度が２５０〜４００℃まで変化したと
する。第８図の条件で基板上に少なくとも２．ＯＸＩＯ
”Ｐａｒｔｉｃｌｅ−ｃｍ−’の酸素原子濃度を発生さ
せるには、３２５〜４００℃までは、基板へのオゾン到
達時間が１．０ｓｅｃになる流速が必要であるが、２５
０〜３２５℃の範囲では１．６ｓｅｃになる流速で十分
であることがわかる。従って、これらに対応して微細口
の大きさ、密度などに分布を持たせ、供給オゾン含有ガ
スに適切な流速分布を持たせれば効果的に不純物薄膜を
除去できる。In the embodiment shown in FIG. 1, a thin film of impurities generated on the surface after forming a thick film is removed by supplying ozone during the cooling process 14. The substrate 3 coated with the thick film paste is carried into a thick film paste baking apparatus by, for example, a belt-type substrate transport device 4 . It is heated to the set temperature of the infrared heating light source 2 for firing and passes through the inside of the firing reaction chamber 1. After the firing reaction is completed, the substrate is gradually cooled until the substrate temperature reaches 100 to 40℃.
An ozone aeration bag W6 having an ozone gas supply surface with fine openings is set at a position where the temperature is 0°C, preferably 200 to 300°C, and has a flow velocity distribution corresponding to temperature changes of the substrate. Ozone is supplied intensively to the substrate surface by this ozone diffuser 6. FIG. 8 shows an example of the relationship between temperature and the concentration of generated oxygen atoms, depending on the time at which ozone gas reaches the substrate. The supplied ozone concentration and arrival time are values under standard conditions. Here, it is assumed that the temperature of the substrate and the atmosphere changes from 250 to 400° C. using the infrared light source 9 for preheating. At least 2. OXIO
To generate an oxygen atom concentration of ``Particle-cm-'', a flow rate of 1.0 sec is required for ozone to reach the substrate from 325 to 400°C, but 25
It can be seen that a flow rate of 1.6 sec is sufficient in the range of 0 to 325°C. Therefore, the impurity thin film can be effectively removed by providing a distribution in the size, density, etc. of the fine openings corresponding to these, and providing an appropriate flow velocity distribution in the supplied ozone-containing gas.
基板３上の厚膜上に発生した不純物薄膜は、オゾンにさ
らされながら通過する。オゾンは熱分解し活性な酸素原
子を発生し、その酸素原子及びオゾンが不純物薄膜を除
去していく。The impurity thin film generated on the thick film on the substrate 3 passes while being exposed to ozone. Ozone thermally decomposes to generate active oxygen atoms, and the oxygen atoms and ozone remove the impurity thin film.
ここで、必要な酸素原子濃度は、予備実験によりあらか
じめ決定でき、図示しない酸素原子濃度設定装置により
供給オゾン濃度、オゾン散気流量、基板及び雰囲気温度
のうち１つあるいは複数の条件を操作して設定する事が
できる。また、図示しない酸素原子濃度検出装置により
基板上に発生する酸素原子濃度を測定し、上述の酸素原
子濃度設定装置にフィードバックをかけることで酸素原
子濃度を設定値に保持することができる。この酸素原子
濃度検出装置の酸素原子濃度検出方法は例えばオゾン濃
度、流速、温度などのパラメータを用いて演算した値で
も十分対応がとれ、不純物層除去効果は実測により検出
する酸素原子検出装置を利用したものと同等のレベルに
ある。Here, the necessary oxygen atom concentration can be determined in advance through preliminary experiments, and by manipulating one or more of the following conditions: supply ozone concentration, ozone diffusion flow rate, substrate and ambient temperature using an oxygen atom concentration setting device (not shown). Can be set. Further, the oxygen atom concentration generated on the substrate is measured by an oxygen atom concentration detection device (not shown), and the oxygen atom concentration can be maintained at a set value by applying feedback to the above-mentioned oxygen atom concentration setting device. The oxygen atom concentration detection method of this oxygen atom concentration detection device is sufficiently compatible with values calculated using parameters such as ozone concentration, flow rate, and temperature, and the impurity layer removal effect is detected by actual measurement using an oxygen atom detection device. It is at the same level as the
一方、装置外部にオゾンが漏れ出ると人体に悪影響を与
えるので、本実施例ではオゾンを効率よく回収排除する
ためにオゾン散気装置６をオゾン回収用囲い７で囲い、
オゾンが外部に漏れ出ないようにしている。On the other hand, if ozone leaks outside the device, it will have an adverse effect on the human body, so in this embodiment, in order to efficiently recover and eliminate ozone, the ozone diffuser 6 is surrounded by an ozone recovery enclosure 7.
This prevents ozone from leaking outside.
第２図は上記実施例時の基板の温度変化の例を示したも
のである。この場合、オゾン含有雰囲気範囲１６内の基
板温度は一定温度を示している。FIG. 2 shows an example of the temperature change of the substrate in the above embodiment. In this case, the substrate temperature within the ozone-containing atmosphere range 16 is constant.
従って、オゾンガス供給面に分布させる微細口の構造は
、目的とする酸素原子濃度を得られるような一定流速に
なるように、大きさ９位置分布をつくれば良い事になる
。Therefore, the structure of the fine holes to be distributed on the ozone gas supply surface can be made to have a size distribution in 9 positions so that the flow rate is constant enough to obtain the target oxygen atom concentration.
なお、上記実施例は厚膜ペースト焼成後に発生した不純
物薄膜をオゾン雰囲気を通過させる事により除去するも
のを示したが、第３図に示す本発明のたの実施例のよう
に、基板加熱前の基板導入工程時に厚膜ペースト自身を
オゾン雰囲気にさらすようにしてもよい、この実施例は
厚膜ペースト中に存在する不純物薄膜成分を焼成前に除
去してしまうものである。第３図中、第１図と同一符号
は同−又は相当部分である。In addition, although the above embodiment shows that the impurity thin film generated after firing the thick film paste is removed by passing it through an ozone atmosphere, as in another embodiment of the present invention shown in FIG. The thick film paste itself may be exposed to an ozone atmosphere during the step of introducing the substrate. In this embodiment, impurity thin film components present in the thick film paste are removed before firing. In FIG. 3, the same reference numerals as in FIG. 1 indicate the same or corresponding parts.
また、第４図は焼成準備加熱過程、焼成加熱過程、冷却
過程にオゾンを供給する本発明の他の実施例を示す図で
あり、図中、第１図と同一符号は同−又は相当部分であ
る。この例では、厚膜ペースト中の不純物薄膜成分及び
厚膜表面上の不純物薄膜は、焼成加熱過程前後でオゾン
が分解して生成する酸素原子又はオゾンと反応して除去
される。FIG. 4 is a diagram showing another embodiment of the present invention in which ozone is supplied during the firing preparation heating process, firing heating process, and cooling process. In the figure, the same reference numerals as in FIG. It is. In this example, the impurity thin film component in the thick film paste and the impurity thin film on the surface of the thick film are removed by reacting with oxygen atoms or ozone generated by ozone decomposition before and after the firing and heating process.
一方散素原料でオゾンを発生させた場合、焼成反応室１
に供給されたオゾンは高温のためすぐ完全に分解し、酸
素になるため、純酸素供給と同じとなり清浄空気（約２
０％酸素）より効率よく焼成反応がおこなえる。つまり
焼成反応の高効率化、不純物薄膜除去の２つの効果によ
り良質な厚膜を得る事ができる。On the other hand, when ozone is generated using a dispersed raw material, the firing reaction chamber 1
Due to the high temperature, the ozone supplied to the air immediately decomposes completely and becomes oxygen, which is the same as supplying pure oxygen and produces clean air (approx.
(0% oxygen) The calcination reaction can be performed more efficiently. In other words, a high-quality thick film can be obtained due to the two effects of increasing the efficiency of the firing reaction and removing a thin film of impurities.
また、第５図は基板導入過程、焼成準備加熱過程、焼成
加熱過程にオゾンを供給する例である。Further, FIG. 5 shows an example in which ozone is supplied during the substrate introduction process, firing preparation heating process, and firing heating process.
この例では厚膜ペースト中に存在する不純物薄膜成分の
除去及び焼成反応の高効率化の２つの効果が得られる。In this example, the two effects of removing impurity thin film components present in the thick film paste and increasing the efficiency of the firing reaction can be obtained.
また、以上の実施例では、連続式の焼成装置について説
明したが、バッチ式の焼成装置でも対応できる。つまり
、焼成準備加熱過程、焼成加熱過程、冷却過程、のうち
１過程あるいは複数過程をオゾン含有雰囲気下で行えば
良く、上記実施例と同様の効果を奏する。Further, in the above embodiments, a continuous type firing apparatus has been described, but a batch type firing apparatus can also be used. In other words, one or more of the firing preparation heating process, firing heating process, and cooling process may be performed in an ozone-containing atmosphere, and the same effects as in the above embodiments can be achieved.
以上のように、この発明によれば厚膜ペースト焼成工程
の１過程あるいは複数過程において基板をオゾン雰囲気
下におくように構成したので焼成工程後には不純物薄膜
の存在しない高品質の厚膜を得る事ができる効果がある
。As described above, according to the present invention, since the substrate is placed in an ozone atmosphere during one or more steps of the thick film paste firing process, a high quality thick film free of impurity thin films can be obtained after the firing process. It has the effect of being able to do things.
第１図はこの発明の一実施例による厚膜ペースト焼成装
置の断面図、第２図は第１図の実施例装置における各処
理過程ごとの基板温度変化を示す図、第３図、第４図及
び第５図は本発明の他の実施例を示す厚膜ペースト焼成
装置の断面図、第６図は従来の厚膜ペースト焼成装置を
示す断面図、第７図は第６図の従来装置における各処理
過程ごとの基板温度変化を示す図、第８図は温度と発生
する酸素原子の関係を基板へのオゾンガス到達時間別に
示す図である。
１は焼成反応室、２は焼成用赤外線加熱光源、３は基板
、４は基板搬送装置、５はオゾン発生装置、６はオゾン
散気装置、７はオゾン回収用囲い、８は排気装置、９は
予備加熱用赤外線光源、１０は清浄空気供給管。
なお図中同一符号は同−又は相当部分を示す。FIG. 1 is a sectional view of a thick film paste firing apparatus according to an embodiment of the present invention, FIG. 2 is a diagram showing changes in substrate temperature during each processing process in the embodiment apparatus of FIG. 5 and 5 are cross-sectional views of a thick film paste firing apparatus showing another embodiment of the present invention, FIG. 6 is a cross-sectional view of a conventional thick film paste firing apparatus, and FIG. 7 is a conventional apparatus of FIG. 6. FIG. 8 is a diagram showing the relationship between temperature and generated oxygen atoms according to the time at which ozone gas reaches the substrate. 1 is a firing reaction chamber, 2 is an infrared heating light source for firing, 3 is a substrate, 4 is a substrate transport device, 5 is an ozone generator, 6 is an ozone diffuser, 7 is an ozone recovery enclosure, 8 is an exhaust device, 9 1 is an infrared light source for preheating, and 10 is a clean air supply pipe. Note that the same reference numerals in the figures indicate the same or equivalent parts.
Claims (2)
ースト（以下厚膜ペーストとする）を基板上に塗布し、
焼成により厚膜を作成する焼成方法において、 厚膜ペースト焼成装置で行う焼成工程である基板導入過
程、焼成準備加熱過程、焼成加熱過程、冷却過程、基板
搬出過程のうち１過程あるいは複数過程をオゾン含有雰
囲気下で行うことを特徴とする厚膜ペースト焼成方法。(1) Apply glass frit-based and metal-organic compound-based thick film paste (hereinafter referred to as thick film paste) onto the substrate,
In a firing method that creates a thick film by firing, one or more of the firing steps performed in a thick film paste firing device, including the substrate introduction process, firing preparation heating process, firing heating process, cooling process, and substrate unloading process, is performed using ozone. A thick film paste firing method characterized in that the firing method is carried out in a containing atmosphere.
を作成する厚膜ペースト焼成装置において、オゾン含有
気体を供給できるオゾン発生装置と、該オゾン発生装置
で発生されたオゾンを基板導入過程、焼成準備加熱過程
、焼成加熱過程、冷却過程、基板搬出過程のうち１過程
あるいは複数過程で被加工物に対して散気するオゾン散
気装置とを備えたことを特徴とする厚膜ペースト焼成装
置。(2) In a thick film paste firing device that creates a thick film by firing a thick film paste coated on a substrate, an ozone generator capable of supplying ozone-containing gas and an ozone generator capable of supplying ozone to the substrate are used. A thick film characterized by being equipped with an ozone diffuser that diffuses air to a workpiece during one or more of the following processes: introduction process, firing preparation heating process, firing heating process, cooling process, and substrate unloading process. Paste baking equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12113188A JPH01290290A (en) | 1988-05-18 | 1988-05-18 | Method and apparatus for baking thick film paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12113188A JPH01290290A (en) | 1988-05-18 | 1988-05-18 | Method and apparatus for baking thick film paste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01290290A true JPH01290290A (en) | 1989-11-22 |
Family
ID=14803643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12113188A Pending JPH01290290A (en) | 1988-05-18 | 1988-05-18 | Method and apparatus for baking thick film paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01290290A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007212029A (en) * | 2006-02-08 | 2007-08-23 | Koyo Thermo System Kk | Heat treatment device |
-
1988
- 1988-05-18 JP JP12113188A patent/JPH01290290A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007212029A (en) * | 2006-02-08 | 2007-08-23 | Koyo Thermo System Kk | Heat treatment device |
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