JPH04286316A - Method and device for manufacture of semiconductor device - Google Patents

Abstract

PURPOSE:To prevent generation of dust, to prevent generation of defective products, and to improve the speed of treatment in the manufacture of a semiconductor device wherein a resist pattern is dry-developed. CONSTITUTION:A substrate 6, which is carried from a spare chamber 2, is once retained by the retainer 7a of a treatment chamber 3, a retainer 7 is evacuated into the spare chamber 2, and after the treatment chamber 3 has been shut off by a valve 4, a substrate 6 is heat-treated on a susceptor 11. In this case, a retainer 7a and a shifting mechanism 8a are provided in the treatment chamber 3, and a heater 14 is provided outside the side wall.

Description

[Detailed description of the invention]

0001

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing a semiconductor device in which a resist pattern is formed by dry development in a semiconductor manufacturing process.

In recent years, with the increasing integration and miniaturization of LSIs, it has become necessary to form fine resist patterns. Therefore, when forming fine patterns by dry development, it is necessary to prevent the generation of dust and adhesion to the substrate without reducing the processing speed.

0003

2. Description of the Related Art Conventionally, dry development has been known as an effective method for forming fine patterns in semiconductor manufacturing processes. In this dry development method, the resist on the substrate is exposed to light, the unreacted non-polymer components in the unexposed areas, or the low molecular weight polymer components in the exposed areas are vaporized and removed by heat treatment under reduced pressure, and then RIE (Rea
This is a method of completing a pattern by performing a process such as active ion etching (ion etching) or plasma downflow. In this case, as mentioned above, dry development often requires reduced pressure heat treatment.

FIG. 3 shows a schematic diagram of a conventional manufacturing apparatus. In FIG. 3, the manufacturing apparatus 1 includes a preparatory chamber 2 and a processing chamber 3, and the preparatory chamber 2 and the processing chamber 3 are connected via a valve 4. The preliminary chamber 2 is provided with an exhaust port 5 for reducing the pressure in the preliminary chamber 2, and a moving mechanism section 8 for moving a holder 7 holding a substrate 6 to the processing chamber 3. Further, the processing chamber 3 is provided with an exhaust port 9 for reducing the pressure of the processing chamber 3, and a susceptor 11 in which a heater 10 for heat treatment is installed. Note that a gas supply port for etching in the processing chamber 3 and the like are omitted.

[0005] Such a manufacturing apparatus 1 first has a preliminary chamber 2.
At the same time, the pressure inside the processing chamber 3 is reduced, and the susceptor 11 is constantly maintained at a substrate processing temperature (for example, 60 to 12
0°C). Therefore, the resist-exposed substrate 6
is placed on the susceptor 11 in the processing chamber 3 through the valve 4 by the holder 7, and the substrate 6 is immediately heated to vaporize volatile components from the resist on the surface. In this case, since the inner wall of the processing chamber 3 receives only radiant heat from the susceptor 11, the temperature is lower than that of the susceptor 11 and slightly higher than room temperature, except for the portion that is in close contact with the susceptor 11.

[0006]

[Problems to be Solved by the Invention] However, when the substrate 6 is moved to the processing chamber 3 by the moving mechanism 8, the susceptor 1 is heated.
Immediately when the resist is placed on the substrate 6, volatile components begin to vaporize from the resist on the surface of the substrate 6, and a portion of the vaporized components flows into the preliminary chamber 2 through the valve 4, which is opened to allow the transfer mechanism 8 to pass. As a result, it accumulates on the inner wall of the preliminary chamber 2 and becomes one of the causes of dust generation. In addition, the remaining vaporized components vaporized by the reduced pressure heat treatment are not all exhausted, but a considerable amount is adsorbed and deposited on the inner wall of the processing chamber 3, which is at a low temperature of about room temperature, and is peeled off to the surface of the substrate 6. It descends and adheres to the surface. For this reason, it is necessary to stop the processing apparatus 1 every time several substrates 6 are processed, lower the temperature, and then clean the inside of the apparatus, which poses the problem of requiring maintenance of the apparatus and reducing the substrate processing speed. be.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a semiconductor device that prevents the generation of dust, prevents the occurrence of defective substrates, and improves processing speed.

[0008]

[Means for Solving the Problems] FIG. 1 shows an explanatory diagram of the principle of the method of the present invention. In FIG. 1, a resist-exposed substrate is transported from a depressurized preliminary chamber to a depressurized processing chamber by means of a moving section via a valve, and the substrate placed on a susceptor is heated by heating means in the processing chamber. In a method for manufacturing a semiconductor device in which a resist pattern is formed by heat-treating a substrate, in a first step, the valve is opened and the substrate is moved by the moving means to a holding section provided in the processing chamber. Place it on. In the second step, the moving means is evacuated to the preliminary chamber, and the preliminary chamber and the processing chamber are shut off by the valve. Then, in a third step, the substrate placed on the holding portion is placed on the susceptor, which is set at a predetermined temperature by the heating means, and the heating treatment is performed.

[0009] Also, the preparatory chamber and the processing chamber are reduced in pressure, a valve for shutting off the preparatory chamber and the processing chamber, and a first moving means for transporting the substrate from the preparatory chamber to the processing chamber. a holder for temporarily placing the substrate in the processing chamber; a susceptor for placing the substrate and heat-treating the substrate; a heating means for heating the susceptor; a second moving means for moving the mounted substrate onto the susceptor; and a second heating means for heating the inner wall of the processing chamber to a predetermined temperature.

0010

[Operation] As described above, the substrate is placed on the holding section of the processing chamber from the preliminary chamber by the moving means (first moving means). At this time, the holding section is not affected by the heat from the heating means and the side wall of the processing chamber, and volatile components are not immediately vaporized by the heat treatment of the resist-exposed substrate. Then, after the moving means is evacuated to the preliminary chamber and the preliminary chamber and the processing chamber are shut off by a valve, the substrate is heated in the susceptor. In this case, the processing chamber is provided with a second heating means for the side wall or a holding section (second moving means) that holds the substrate for a certain period of time.

[0011] This makes it possible to prevent components vaporized by the heat treatment of the resist-exposed substrate from entering the preliminary chamber, and to eliminate the cause of dust generation. Further, the side wall of the processing chamber is heated by the second heating means to a predetermined temperature, that is, a temperature that minimizes the temperature difference with the susceptor. This prevents the components vaporized by the heat treatment of the substrate from adhering to the side walls, prevents dust from adhering to the substrate, prevents defects, and improves processing speed.

0012

Embodiment FIG. 2 shows a configuration diagram of an embodiment of the present invention. FIG. 2(A) shows a schematic diagram of a semiconductor manufacturing device.
Components that are the same as those in FIG. 3 are given the same reference numerals.

In FIG. 2A, a semiconductor manufacturing apparatus 1 has a preliminary chamber 2 and a processing chamber 3 connected by a valve 4. As shown in FIG. An exhaust port 5 is formed in the preliminary chamber 2, and a vacuum pump 12 is connected to the exhaust port 5. Further, the holder holding the substrate 6 is moved in the horizontal direction (in the direction of the processing chamber 2 through the valve 4) by the moving mechanism 8. The holder 7 and the moving mechanism 8 constitute a first moving means.

Here, the substrate 6 has, for example, a resist OF
20 PR-800 (product name, Tokyo Ohka Kogyo Co., Ltd.)
A lower resist layer with a thickness of 1.5 μm is formed by annealing at 0°C, and PTMDSH (poly 4,4
, 6,6-tetramethyl-4,6-disila-2-heptyne) and DCQI (2,6-dichloroquinone-4-chloroimide) are combined to form an upper resist layer. Then, a predetermined resist pattern is exposed to, for example, KrF (krypton fluoride) excimer laser light (wavelength: 248 nm).

On the other hand, the processing chamber 3 has an exhaust port 9 formed therein.
A vacuum pump 13 is connected to the exhaust port 9. Further, a susceptor 11 in which a heater 10 serving as a heating means is installed is provided in the processing chamber 3, and a substrate 6 is placed on the susceptor 11.
A holder 7a, which is a holding section that holds the holder 7a, is positioned and moved up and down by a moving mechanism 8a, which is a second moving means. The retainer 7a has a contact portion with the substrate 6 made of a material with low thermal conductivity such as quartz or fluorocarbon resin, and as shown in FIG. possible) and 0.
Maintain a micro point contact area of 5 cm2 or less. Furthermore, a heater 1 serving as a second heating means is installed outside the side wall of the processing chamber 3.
4 is provided. Note that a supply port for an etching agent for etching in the processing chamber 3 and the like are omitted.

In such a manufacturing processing apparatus 1, first, the preparatory chamber 2 is heated to a pressure of, for example, 0.003 Torr by a vacuum pump 12.
At the same time, the pressure in the processing chamber 3 is similarly reduced to 0.003 Torr or less by the vacuum pump 13. Further, the temperature on the susceptor 11 is heated to 70° C. by the heater 10, for example.
At the same time, the side wall of the processing chamber 3 is heated by the heater 14
The temperature is set at 70±10°C. This processing chamber 3
The reason for setting the side wall of the susceptor 11 to ±10°C is as follows.
Normally, the temperature of the susceptor 11 is set to a temperature that prevents thermal crosslinking and polymerization of the low molecular weight components in the resist on the substrate 6 and vaporizes them at a high rate, so the temperature of the inner wall of the device is also the same as the temperature of the susceptor 11. This is because it is desirable to perform substrate processing by setting the temperature at a certain level.

The substrate 6 exposed to the resist described above is now held by the holder 7, and is placed on the holder 7a in the processing chamber 3 by the moving mechanism 8 after the valve 4 is opened. In this case, the holder 7a holds the substrate 6 with a small contact area,
Moreover, since it has low thermal conductivity, the temperature does not reach the point where the low molecular weight components on the substrate 6 volatilize in a short period of time. Therefore, the holder 7 is evacuated to the preliminary chamber 2, and the valve 4 is closed to shut off the preliminary chamber 2 and the processing chamber 3. And the moving mechanism 8a
The substrate 6 is placed on the heated susceptor 11 and heat treated to volatilize the low molecular weight components on the surface of the substrate 6. Thereby, the vaporized low molecular weight components do not enter the preliminary chamber 2, and the generation of dust in the preliminary chamber 2 can be prevented. On the other hand, since the temperature of the side wall of the processing chamber 2 is set to be the same as the temperature on the susceptor 11, the vaporized low molecular weight components are prevented from adhering to the side wall. That is, the vaporized components are exhausted from the exhaust port 9. Note that the temperature of the inner wall of the apparatus to be set varies depending on the type of resist used for dry development, etc., but generally it is sufficient as long as it is a temperature sufficient to prevent the low molecular weight components vaporized from the substrate 6 from adhering to the inner wall of the apparatus. , susceptor 1
It does not necessarily have to be higher than the temperature above 1. Further, it is sufficient that the upper limit of the side wall temperature of the processing chamber 2 is set below the temperature at which low molecular weight components start depositing mainly as a polymer on the side wall due to thermal reaction.

[0018] This makes it possible to prevent the generation of dust, which conventionally occurs in large amounts due to reduced pressure heating.

After the low molecular weight component of the polymer in the exposed area on the substrate 6 (an additive agent which is an unreacted non-polymer component in the unexposed area) is vaporized and removed by heat treatment, pre-treatment in a reduced pressure atmosphere is performed. (for example, 0.003 Torr or less, 25°C, 30 minutes) and downflow treatment (for example, O2: 1000cc/min, CF4: 500
Dry development of the upper resist layer on the substrate 6 is performed using microwaves (cc/min, 6 Torr, 700 W). Subsequently, the lower resist layer is etched by oxygen plasma reactive ion etching (for example, O2: 20 cc/min, 0.08 Torr, radio frequency (RF) output: 500 W) to form a resist pattern.

[0020]

As described above, according to the present invention, a single substrate is held in the holding part of the processing chamber, the moving means is evacuated, and the preparatory chamber and the processing chamber are isolated by the valve, and then the substrate is heated. , it is possible to prevent volatile components from entering the preliminary chamber due to heat treatment of the substrate, thereby preventing the generation of dust in the preliminary chamber, and by heating the side wall of the processing chamber at a predetermined temperature, the volatile components can be prevented from entering the side wall. Adhesion is prevented, the maintenance effort of the equipment is reduced, and processing speed and yield in semiconductor manufacturing can be improved.

[Brief explanation of the drawing]

FIG. 1 is a diagram explaining the principle of the method of the present invention.

FIG. 2 is a configuration diagram of an embodiment of the present invention.

FIG. 3 is a schematic diagram of a conventional manufacturing apparatus.

[Explanation of symbols]

1 Manufacturing equipment 2 Preliminary room 3 Processing room 4 Valve 5, 9 Exhaust port 6 Board 7,7a Cage 8,8a　Movement mechanism 10, 14 Heater 11 Susceptor 12,13 Vacuum pump

Claims (3)

[Claims] 1. A resist-exposed substrate (6) is transported from a depressurized preparatory chamber (2) to a depressurized processing chamber (3) by a moving means (7, 8) via a valve (4). In the method for manufacturing a semiconductor device, the resist pattern is formed by heating the substrate (6) placed on the susceptor (11) using the heating means (10) in the processing chamber (3). opening the valve (4) and placing the substrate (6) on the holding part (7a) provided in the processing chamber (3) by the moving means (7, 8);
a step of evacuating the moving means (7, 8) to the preliminary chamber (2) and shutting off the preliminary chamber (2) and the processing chamber (3) with the valve (4); ) is placed on the susceptor (11) set at a predetermined temperature by the heating means (10) and subjected to the heat treatment. A method for manufacturing a semiconductor device. [Claim 2] A pre-chamber (2) and a processing chamber (
3), a valve (4) for shutting off the preliminary chamber (2) and the processing chamber (3), and a valve (4) for shutting off the preliminary chamber (2) to the processing chamber (3);
3) first moving means for transporting the substrate (6) into the interior (
7, 8), a holding part (7a) for temporarily placing the substrate (6) in the processing chamber (3), and a holding part (7a) for temporarily placing the substrate (6) in the processing chamber (3);
) for placing and heat-treating the susceptor (11), heating means (10) for heating the susceptor (11), and the substrate (6) placed on the holding part (7a). a second moving means (8) for being moved onto the susceptor (11);
A semiconductor device manufacturing apparatus comprising: a). 3. The semiconductor device manufacturing apparatus according to claim 2, further comprising a second heating means (14) for heating the inner wall of the processing chamber (3) to a predetermined temperature.