JPH01286949A - Dielectric ceramic composition for high-frequency use - Google Patents
Dielectric ceramic composition for high-frequency useInfo
- Publication number
- JPH01286949A JPH01286949A JP63115061A JP11506188A JPH01286949A JP H01286949 A JPH01286949 A JP H01286949A JP 63115061 A JP63115061 A JP 63115061A JP 11506188 A JP11506188 A JP 11506188A JP H01286949 A JPH01286949 A JP H01286949A
- Authority
- JP
- Japan
- Prior art keywords
- ceramic composition
- dielectric ceramic
- frequency
- composition
- 30mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 49
- 239000000919 ceramic Substances 0.000 title claims abstract description 29
- 239000000463 material Substances 0.000 abstract description 4
- 229910052573 porcelain Inorganic materials 0.000 description 9
- 238000005245 sintering Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002747 voluntary effect Effects 0.000 description 1
- 239000012856 weighed raw material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
この発明は高周波用誘電体磁器組成物に関し、特にたと
えばマイクロ波やミリ波などの高周波領域で高いＱ値を
有する高周波用誘電体磁器組成物に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a dielectric ceramic composition for high frequency use, and particularly to a dielectric ceramic composition for high frequency use that has a high Q value in a high frequency region such as microwaves and millimeter waves. Regarding.
（従来技術）
従来、この種の誘電体磁器組成物は、たとえば誘電体共
振器やＭＩＣ用誘電体基板などの材料として広く利用さ
れている。この場合、誘電体磁器組成物としては、Ｑ値
が高くかつ共振周波数の温度係数τｆがほぼ０ （ｐｐ
ｍ／ ’Ｃ）の特性を有するものが使用されている。(Prior Art) Conventionally, this type of dielectric ceramic composition has been widely used as a material for, for example, dielectric resonators and dielectric substrates for MIC. In this case, the dielectric ceramic composition has a high Q value and a temperature coefficient τf of the resonance frequency of approximately 0 (pp
m/'C) is used.
Ｑ値の高い誘電体磁器組成物としては、たとえば、特公
昭６０−５４８９９号公報に開示されるように、一般式
Ｂ ａ （Ｚ ｒＸＺ ｎ、 Ｔａｇ ） ｏ？／！−
Ｘ／Ｚ−３ｙ／、で表される組成式において、０．０２
≦Ｘ≦０．１３゜０．２８≦ｙ≦０．３３．０．５９≦
ｚ≦０．６５ （ただし、Ｘ＋ｙ＋ｚ＝１）の範囲にあ
ることを特徴とする磁器組成物や、特願昭６０−２２５
６２７号で開示されるように、一般式１３ａ （Ｚｒｘ
Ｚｎ、Ｎｉｇ Ｔａｕ Ｎｂｖ）Ｏ？／□□７□４ｙ
／□−３，７□で表される組成において、０．０１≦Ｘ
≦０．０６．０．２８≦ｙ≦０．３３．０．０１≦ｚ≦
０．０５．０．５２≦Ｕ≦０．６５． Ｑ ＜ ｖ≦
０．１３ （ただし、ｘ＋ｙ＋ｚ＋ｕ＋ｖ＝１）の範囲
にあることを特徴とする磁器組成物があった。As a dielectric ceramic composition having a high Q value, for example, as disclosed in Japanese Patent Publication No. 60-54899, the general formula B a (Z rXZ n, Tag ) o? /! −
In the composition formula represented by X/Z-3y/, 0.02
≦X≦0.13゜0.28≦y≦0.33.0.59≦
A porcelain composition characterized in that z≦0.65 (however, X+y+z=1), and a patent application filed in 1986-225
As disclosed in No. 627, general formula 13a (Zrx
Zn, Nig Tau Nbv)O? ／□□7□4y
In the composition represented by /□-3,7□, 0.01≦X
≦0.06.0.28≦y≦0.33.0.01≦z≦
0.05.0.52≦U≦0.65. Q < v≦
There was a porcelain composition characterized in that it was in the range of 0.13 (where x+y+z+u+v=1).
（発明が解決しようとする問題点）
しかし、最近では、使用する周波数領域が高くなってき
ており、さらに高いＱ値を有する材料が要求されている
。(Problems to be Solved by the Invention) However, recently, the frequency range used has become higher, and materials with even higher Q values are required.
それゆえに、この発明の主たる目的は、高周波領域でさ
らに高いＱ値を有する、高周波用誘電体磁器組成物を提
供することである。Therefore, the main object of the present invention is to provide a high-frequency dielectric ceramic composition that has a higher Q value in the high-frequency region.
（問題点を解決するための手段）
従来の材料ではＢａとＢａ以外の酸化物との比がｔｉｌ
に限定されているが、Ｂａに対する他の酸化物を合わせ
た量が１よりも大きい領域で、さらに高いＱ値が得られ
ることがわかった。(Means for solving the problem) In conventional materials, the ratio of Ba and oxides other than Ba is til
However, it has been found that even higher Q values can be obtained in a region where the combined amount of other oxides relative to Ba is greater than 1.
この発明にかかる高周波用誘電体磁器組成物は、一般式
Ｂ ａ （Ｚ ｒＸＺ ｎｙ Ｔａｇ ） ＆ Ｏｗ
（ｗは任意の数）で表される組成において、０．０１
≦Ｘ≦０．０６．０．２９≦ｙ≦０．３４．０．６０≦
ｚ≦０．７０ （ただし、Ｘ ＋ ｙ ＋ ｚ −１）
かつ１．００＜ （ｒ≦１．０３の範囲にある、高周波
用磁器組成物である。The high frequency dielectric ceramic composition according to the present invention has the general formula B a (Z rXZ ny Tag ) & Ow
(w is an arbitrary number), 0.01
≦X≦0.06.0.29≦y≦0.34.0.60≦
z≦0.70 (X + y + z -1)
and 1.00<(r≦1.03), the composition is a high-frequency ceramic composition.
さらに、この発明にかかる高周波用磁器組成物は、上述
の高周波用磁器組成物において、ＺｎをＮｉで３０モル
％以内置換し、またはＴａをＮｂで３０モル％以内置換
し、またはＺｎをＮｉで３０モル％以内置換しかつＴａ
をＮｂで３０モル％以内置換した、高周波用磁器組成物
である。Furthermore, the high-frequency ceramic composition according to the present invention has the above-mentioned high-frequency ceramic composition in which Zn is replaced with Ni within 30 mol%, Ta is replaced with Nb within 30 mol%, or Zn is replaced with Ni. Substituted within 30 mol% and Ta
This is a high-frequency ceramic composition in which Nb is substituted with Nb within 30 mol%.
すなわち、この発明にかかる誘電体磁器組成物は、一般
式Ｂａ （ＺｒＸ （Ｚｎ＋−１Ｎｔｕ）ｙ （Ｔ
ａ ｌ−ｖ Ｎ ｂｙ ） ｚ ） ｔｘ Ｏｗ
（ｗは任意の数）で表される組成において、０．０１≦
Ｘ≦０．０６．０．２９≦ｙ≦０．３４．０．６０≦ｚ
≦０．７０ （ただし、ｘ＋ｙ＝１）かつ１．００＜α
≦１．０３かつＱ＜ｕ≦０．３０． Ｑ＜ｖ≦０．３
０の範囲にある、高周波用誘電体磁器組成物である。That is, the dielectric ceramic composition according to the present invention has the general formula Ba (ZrX (Zn+-1Ntu)y (T
a l-v N by ) z ) tx Ow
(w is any number), 0.01≦
X≦0.06.0.29≦y≦0.34.0.60≦z
≦0.70 (x+y=1) and 1.00<α
≦1.03 and Q<u≦0.30. Q<v≦0.3
This is a high frequency dielectric ceramic composition in the range of 0.
（発明の効果）
この発明によれば、高いＱ値を有する高周波用誘電体磁
器組成物が得られる。(Effects of the Invention) According to the present invention, a high frequency dielectric ceramic composition having a high Q value can be obtained.
この発明の上述の目的、その他の目的、特徴および利点
は、図面を参照して行う以下の実施例の詳細な説明から
一層明らかとなろう。The above objects, other objects, features and advantages of the present invention will become more apparent from the following detailed description of embodiments with reference to the drawings.
（実施例）
高純度のＢａＣ０，、ＺｒＯ，、ＺｎＯ，ＮｉＯ＋ Ｔ
ａ ２０ｓ ＊ Ｎ ｂｚ Ｏｓを、別表１に、示す
組成からなる磁器組成物が得られるように秤量し、秤量
原料をボールミルで湿式混合した。そして、その混合物
を１０００℃で２時間仮焼し、さらにバインダを加えて
再び２時間湿式混合し、その後、脱水、整粒を行って粉
末を得た。得られた粉末を２ｋｇ／−の圧力で直径１２
ｍｍ、厚さ６ｍの寸法の円板に成形し、１４００℃で４
時間焼成して磁器試料を得た。(Example) High purity BaC0, ZrO, ZnO, NiO+T
a20s*NbzOs was weighed so as to obtain a porcelain composition having the composition shown in Attached Table 1, and the weighed raw materials were wet mixed in a ball mill. Then, the mixture was calcined at 1000° C. for 2 hours, a binder was added and wet-mixed again for 2 hours, and then dehydrated and sized to obtain a powder. The obtained powder was crushed to a diameter of 12 mm under a pressure of 2 kg/-.
It was molded into a disc with dimensions of mm and thickness of 6 m, and heated at 1400°C for 4
Porcelain samples were obtained by firing for hours.
得られた各磁器試料について、７ＧＨｚの周波数におけ
る比誘電率εｒ、Ｑ値および共振周波数の温度係数τｆ
（ｐｐｍ／’Ｃ）を測定し、その結果を別表２に示した
。For each obtained ceramic sample, the relative permittivity εr, Q value, and temperature coefficient of resonance frequency τf at a frequency of 7 GHz
(ppm/'C) was measured and the results are shown in Attached Table 2.
なお、表中、番号に＊を付した試料はこの発明の範囲外
のものであり、それ以外の試料はすべてこの発明の範囲
内のものである。In the table, the samples marked with * are outside the scope of this invention, and all other samples are within the scope of this invention.
また、図面には、各試料の一般式Ｂａ （Ｚｒｘ（Ｚ
ｎ＋−ｕ Ｎ ｌｕ ） ｙ （Ｔａ＋−ｖ Ｎｂｖ
） ｚ ） ｉｋｏ、、におけるｘ、 ｙおよび２
の値を表した。この場合、図面中に○印を付した数字は
各試料番号を表す。さらに、この図面には、この発明に
かかる一般式Ｂａ （ｚｒｘ （Ｚｎ＋−ｕ Ｎｉ
ａ ）ｙ （Ｔａ１−Ｖ Ｎ ｂ ｖ ） ｚ ）
（ｋ Ｏｗにおけるｘ、 ｙおよび２の範囲を４角形
で表した。The drawing also shows the general formula Ba (Zrx(Z
n+-u Nlu) y (Ta+-v Nbv
) z ) iko, x, y and 2 in
represents the value of In this case, the numbers marked with a circle in the drawing represent each sample number. Furthermore, this drawing shows the general formula Ba (zrx (Zn+-u Ni
a)y (Ta1-VNbv)z)
(The ranges of x, y, and 2 in k Ow are represented by rectangles.
表１および表２から明らかなように、この発明にかかる
組成物では、高い誘電率、高いＱ値および良好な共振周
波数の温度係数を有することがわかる。As is clear from Tables 1 and 2, the composition according to the present invention has a high dielectric constant, a high Q value, and a good temperature coefficient of resonance frequency.
そのため、この発明にかかる組成物は、従来のような１
〜１０ＧＨｚの帯域からさらに高い１０〜５０ＧＨｚの
帯域への使用が可能となる。Therefore, the composition according to the present invention is different from conventional one.
It becomes possible to use the band from ~10 GHz to a higher band of 10 to 50 GHz.
なお、この発明の組成範囲を限定した理由は次の通りで
ある。The reason for limiting the composition range of this invention is as follows.
Ｘ＜０．０１では焼結が不安定になる。また、Ｘ〉０．
０６ （試料番号９参照）では、共振周波数の温度係数
τｆが大きくなり実用に供し得ない。When X<0.01, sintering becomes unstable. Also, X>0.
06 (see sample number 9), the temperature coefficient τf of the resonant frequency becomes too large to be put to practical use.
ｙ＜０．２９またはｙ ＞０．３４ （試料番号１０参
照）では、焼結しない。When y<0.29 or y>0.34 (see sample no. 10), no sintering occurs.
２＜０．６０または２ ＞０．７０では、焼結しない。When 2<0.60 or 2>0.70, no sintering occurs.
α＜１．００ （試料番号７参照）では焼結しない。When α<1.00 (see sample number 7), no sintering occurs.
また、α≧１．Ｑ３ （試料番号８参照）では、Ｑ値が
下がり好ましくない。Also, α≧1. In Q3 (see sample number 8), the Q value decreases, which is not desirable.
ｕ ＞０．３０ （試料番号１３参照）では、Ｑ値が下
がり好ましくない。When u>0.30 (see sample number 13), the Q value decreases, which is not preferable.
ｖ ＞０．３０ （試料番号１５参照）では、Ｑ値が下
がり好ましくない。When v>0.30 (see sample number 15), the Q value decreases, which is not preferable.
図面はこの発明にかかる一般式Ｂａ （Ｚｒｘ （
Ｚｎｌ−ｕ Ｎｔａ ） ｙ （Ｔａ＋−ｖ Ｎｂｖ
） ｚ ） ｔｘ Ｏ８におけるｘ、 ｙおよび２
の範囲を余す３元図である。
特許出願人 株式会社 村田製作所
代理人 弁理士 岡 １） 全 啓
表１
＊印はこの発明の範囲外
表２
本印はこの発明の範囲外
手続主甫正書印発）
１．事件の表示
昭和６３年 特許願 第１１５０６１号２、 発明の名
称
高周波用誘電体磁器組成物
３、補正をする者
事件との関係 特許出願人
住 所 京都府長岡京市天神二丁目２６番１０号名 称
（６２３）株式会社 打出製作所代表者 村 １
） 昭
４、代 理 人 ８５４１冨大阪（０６） ２５２−６
８８８ （代）住 所 大阪市東区南本町４丁目４１番
地自発補正
６、補正の対象
０河◆甫帝へ「ル上昏推士＾鯨闇Ｍ ｆｆＪ ｌ ↓ル
バ「７、補正の内容
（１）明細書の特許請求の範囲を別紙のとおり訂正する
。
（２）明細書第３頁第２０行の「高周波用磁器組成物」
を、「高周波用誘電体磁器組成物」に訂正する。
（３）明細書第４頁第１行、第２行および第６行の「高
周波用磁器組成物」を、「高周波用誘電体磁器組成物」
に訂正する。
（４）明細書第４頁第１１行のｒｘ＋ｙ＝ＩＪを、「ｘ
＋ｙ＋ｚ＝ＩＪに訂正する。
以上
１一般式Ｂａ （Ｚｒ、ＺｎｙＴａ、）＆Ｏ。
（Ｗは任意の数）で表される組成において、０．０１≦
Ｘ≦０．０６．０．２９≦ｙ≦０．３４．０．６０≦ｚ
≦０．７０ （ただし、ｘ＋ｙ＋ｚ＝１）かつ１．００
＜α≦１，０３の範囲にあることを特徴とする、高周波
用ｎ１体磁器組成物。
２、特許請求の範囲第１項記載の高周波用銹１体磁器組
成物において、
ＺｎをＮｉで３０モル％以内置換し、またはＴａをＮｂ
で３０モル％以内置換し、またはＺｎをＮｉで３０モル
％以内置換しかつＴａをＮｂで３０モル％以内置換した
、高周波用益１体磁器組成物。
以上
手続主甫正書１発）
１、事件の表示
昭和６３年 特許願 第１１５０６１号２、発明の名称
高周波用誘電体磁器組成物
３、補正をする者
事件との関係 特許出願人
住 所 京都府長岡京市天神二丁目２６番１０号名 称
（６２３）株式会社 打出製作所代表者 村 １
） 昭
４、代 理 人 、５５４１ ｆＲ大阪（０６） ２５
２−６８８８ （代）６、補正の対象
明細書の「特許請求の範囲の欄」および「発明の詳細な
説明の欄」
７、補正の内容
（１）明細書の特許請求の範囲を別紙のとおり訂正する
。
（２）明細書第３頁第１９行のｒｌ、００＜α≦１．０
３」を、ｒｌ、ｏｏ＜α＜１．０３４に訂正する。
（３）明細書第４頁第１２行のｒｌ、００＜α≦１．０
３」を、ｒｌ、００＜α＜１’、０３Ｊに訂正する。
（４）明細書第５頁第１０行のｒ１４００℃で４時間」
を、ｒ１５００℃で５時間」に訂正する。
以上
特許請求の範囲
１一般式Ｂａ （Ｚｒｘ Ｚｎｙ Ｔａｇ ）ＩｋＯｗ
（Ｗは任意の数）で表される組成において、０、Ｏ１≦
Ｘ≦０．０６．０．２９≦ｙ≦０．３４．０．６０≦ｚ
≦０．７０ （ただし、ｘ＋ｙ＋ｚ＝１）かつ１．００
＜α−≦−１．０３の範囲にあることを特徴とする、高
周波用誘電体磁器組成物。
２、特許請求の範囲第１項記載の高周波用誘電体磁器組
成物において、
ＺｎをＮｉで３０モル％以内置換し、またはＴａをＮｂ
で３０モル％以内置換し、またはＺｎをＮｉで３０モル
％以内置換しかつＴａをＮｂで３０モル％以内置換した
、高周波用誘電体磁器組成物。The drawing shows the general formula Ba (Zrx (
Znl-u Nta) y (Ta+-v Nbv
) z ) tx x, y and 2 in O8
It is a ternary diagram that leaves the range of . Patent Applicant Murata Manufacturing Co., Ltd. Representative Patent Attorney Oka 1) Zenkei Table 1 *marked is a list outside the scope of this invention 2 This seal is an official seal of a procedure outside the scope of this invention) 1. Indication of the case 1986 Patent Application No. 115061 2 Title of the invention Dielectric ceramic composition for high frequency 3 Relationship to the case by the person making the amendment Patent applicant Address 2-26-10 Tenjin, Nagaokakyo City, Kyoto Prefecture Name (623) Uchide Manufacturing Co., Ltd. Representative Mura 1
) 4th year of Showa, agent 8541 Tomiosaka (06) 252-6
888 Address: 4-41 Minamihonmachi, Higashi-ku, Osaka City Voluntary correction 6, Target of correction 0 River ◆ To Emperor Fu ``Rujokomoishi ^Whale Darkness M ffJ l ↓ Luba ``7, Contents of correction (1 ) The claims of the specification are amended as shown in the attached sheet. (2) "Porcelain composition for high frequency" on page 3, line 20 of the specification
is corrected to "dielectric ceramic composition for high frequency use." (3) "High frequency porcelain composition" in lines 1, 2 and 6 of page 4 of the specification is replaced with "dielectric porcelain composition for high frequency"
Correct. (4) rx+y=IJ on page 4, line 11 of the specification is “x
Correct to +y+z=IJ. Above 1 general formula Ba (Zr, ZnyTa,)&O. In the composition represented by (W is an arbitrary number), 0.01≦
X≦0.06.0.29≦y≦0.34.0.60≦z
≦0.70 (however, x+y+z=1) and 1.00
A high frequency n1 body porcelain composition, characterized in that it is in the range <α≦1,03. 2. In the high-frequency one-piece ceramic composition according to claim 1, Zn is replaced with Ni within 30 mol%, or Ta is replaced with Nb.
A high-frequency one-body porcelain composition in which Zn is replaced with Ni within 30 mol%, or Ta is replaced with Nb within 30 mol%. 1. Indication of the case 1988 Patent Application No. 115061 2. Title of the invention: High-frequency dielectric ceramic composition 3. Relationship with the person making the amendment Patent applicant address Kyoto 2-26-10 Tenjin, Okakyo City, Prefecture Name (623) Uchide Seisakusho Co., Ltd. Representative Village 1
) 4th year of Showa, agent, 5541 fR Osaka (06) 25
2-6888 (Clause) 6. “Claims column” and “Detailed description of the invention column” of the specification to be amended Correct as shown. (2) rl on page 3, line 19 of the specification, 00<α≦1.0
3'' is corrected to rl, oo<α<1.034. (3) rl on page 4, line 12 of the specification, 00<α≦1.0
3'' is corrected to rl, 00<α<1', 03J. (4) 4 hours at 1400°C on page 5, line 10 of the specification.”
is corrected to ``5 hours at 1500℃''. Claim 1 General formula Ba (Zrx Zny Tag) IkOw
In the composition represented by (W is an arbitrary number), 0, O1≦
X≦0.06.0.29≦y≦0.34.0.60≦z
≦0.70 (however, x+y+z=1) and 1.00
A dielectric ceramic composition for high frequency, characterized in that the composition is in the range of <α-≦-1.03. 2. In the high frequency dielectric ceramic composition according to claim 1, Zn is replaced with Ni within 30 mol%, or Ta is replaced with Nb.
A dielectric ceramic composition for high frequency use, in which Zn is substituted with Ni within 30 mol%, and Ta is substituted with Nb within 30 mol%.
Claims (1)
（ｗは任意の数）で表される組成において、０．０１≦
ｘ≦０．０６，０．２９≦ｙ≦０．３４，０．６０≦ｚ
≦０．７０（ただし、ｘ＋ｙ＋ｚ＝１）かつ １．００＜α≦１．０３の範囲にあることを特徴とする
、高周波用磁器組成物。 ２ 特許請求の範囲第１項記載の高周波用磁器組成物に
おいて、 ＺｎをＮｉで３０モル％以内置換し、またはＴａをＮｂ
で３０モル％以内置換し、またはＺｎをＮｉで３０モル
％以内置換しかつＴａをＮｂで３０モル％以内置換した
、高周波用磁器組成物。[Claims] 1 General formula Ba(Zr_xZn_yTa_z) αO_w
(w is any number), 0.01≦
x≦0.06, 0.29≦y≦0.34, 0.60≦z
A ceramic composition for high frequency use, characterized in that it is in the range of ≦0.70 (x+y+z=1) and 1.00<α≦1.03. 2. In the high frequency ceramic composition according to claim 1, Zn is replaced with Ni within 30 mol%, or Ta is replaced with Nb.
A ceramic composition for high frequency use, in which Zn is substituted with Ni within 30 mol%, and Ta is substituted with Nb within 30 mol%.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63115061A JPH068209B2 (en) | 1988-05-11 | 1988-05-11 | High frequency dielectric ceramic composition |
| DE19893915169 DE3915169A1 (en) | 1988-05-11 | 1989-05-09 | Dielectric ceramic composition for high frequency |
| FR8906212A FR2631332B1 (en) | 1988-05-11 | 1989-05-11 | HIGH FREQUENCY DIELECTRIC CERAMIC COMPOSITION |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63115061A JPH068209B2 (en) | 1988-05-11 | 1988-05-11 | High frequency dielectric ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01286949A true JPH01286949A (en) | 1989-11-17 |
| JPH068209B2 JPH068209B2 (en) | 1994-02-02 |
Family
ID=14653206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63115061A Expired - Lifetime JPH068209B2 (en) | 1988-05-11 | 1988-05-11 | High frequency dielectric ceramic composition |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH068209B2 (en) |
| DE (1) | DE3915169A1 (en) |
| FR (1) | FR2631332B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02199052A (en) * | 1989-01-27 | 1990-08-07 | Fuji Elelctrochem Co Ltd | Dielectric ceramic composition for high frequency |
| US6503645B1 (en) * | 1999-10-07 | 2003-01-07 | Murata Manufacturing Co. Ltd. | Dielectric ceramic composition and ceramic electronic component |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4485180A (en) * | 1982-09-06 | 1984-11-27 | Murata Manufacturing Co., Ltd. | High frequency dielectric ceramic compositions |
| JPS6287453A (en) * | 1985-10-09 | 1987-04-21 | 株式会社村田製作所 | Dielectric ceramic composition for high frequency |
-
1988
- 1988-05-11 JP JP63115061A patent/JPH068209B2/en not_active Expired - Lifetime
-
1989
- 1989-05-09 DE DE19893915169 patent/DE3915169A1/en not_active Withdrawn
- 1989-05-11 FR FR8906212A patent/FR2631332B1/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02199052A (en) * | 1989-01-27 | 1990-08-07 | Fuji Elelctrochem Co Ltd | Dielectric ceramic composition for high frequency |
| US6503645B1 (en) * | 1999-10-07 | 2003-01-07 | Murata Manufacturing Co. Ltd. | Dielectric ceramic composition and ceramic electronic component |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2631332B1 (en) | 1993-10-22 |
| DE3915169A1 (en) | 1989-12-07 |
| FR2631332A1 (en) | 1989-11-17 |
| JPH068209B2 (en) | 1994-02-02 |
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