JPH04265271A - Microwave dielectric porcelain composition - Google Patents
Microwave dielectric porcelain compositionInfo
- Publication number
- JPH04265271A JPH04265271A JP3049044A JP4904491A JPH04265271A JP H04265271 A JPH04265271 A JP H04265271A JP 3049044 A JP3049044 A JP 3049044A JP 4904491 A JP4904491 A JP 4904491A JP H04265271 A JPH04265271 A JP H04265271A
- Authority
- JP
- Japan
- Prior art keywords
- sno2
- value
- microwave dielectric
- amount
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims description 24
- 229910052573 porcelain Inorganic materials 0.000 title abstract description 5
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000000919 ceramic Substances 0.000 claims description 16
- 238000010304 firing Methods 0.000 description 15
- 239000000843 powder Substances 0.000 description 10
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 4
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 238000001354 calcination Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 3
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910009866 Ti5O12 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は、マイクロ波誘電体磁器
組成物に関し、更に詳しく言えば、Q値、比誘電率及び
共振周波数の温度係数においてバランスが取れた性能を
確保しつつ特に適性な温度係数を有するマイクロ波誘電
体磁器組成物に関する。本発明はマイクロ波領域におい
て誘電体共振器、マイクロ波集積回路基板、各種マイク
ロ波回路のインピーダンス整合等に利用される。[Industrial Application Field] The present invention relates to microwave dielectric ceramic compositions, and more specifically, the present invention relates to microwave dielectric ceramic compositions, and more specifically, the present invention relates to microwave dielectric ceramic compositions that are particularly suitable for ensuring well-balanced performance in Q value, dielectric constant, and temperature coefficient of resonance frequency. The present invention relates to a microwave dielectric ceramic composition having a temperature coefficient. The present invention is utilized in the microwave region for impedance matching of dielectric resonators, microwave integrated circuit boards, various microwave circuits, and the like.
【0002】0002
【従来の技術】従来のマイクロ波誘電体磁器組成物とし
ては、ZrO2 −SnO2 −TiO2 系磁器組成
物、BaO−TiO2 系磁器組成物及びその一部を他
の元素で置換した磁器組成物(特公平1−37807号
公報)等が知られている。[Prior Art] Conventional microwave dielectric ceramic compositions include ZrO2-SnO2-TiO2 ceramic compositions, BaO-TiO2 ceramic compositions, and ceramic compositions in which a part of them is replaced with other elements (especially Publication No. 1-37807) and the like are known.
【0003】0003
【発明が解決しようとする課題】しかし、従来の磁器組
成物では、比誘電率若しくはQ値が小さかったり、又は
所望の温度係数が得られなかったりする等の問題がある
。特に、比誘電率、Q値及び温度係数の性能がいずれも
優れた、異なった組成を有する新規なマイクロ波誘電体
磁器組成物が望まれている。特に、BaO・4TiO2
(BaTi4 O9 )の組成を有する誘電体磁器は
、マイクロ波用誘電体として知られている。しかし、こ
の磁器は、誘電率εr が約38程度、無負荷Q値が約
3000程度と高い値を示すが、共振周波数の温度係数
τf が約+50ppm/℃と大きいため、マイクロ波
共振器として設計する場合、温度に安定した性能を有す
るものを得ることができなかった。この為、前記τf
が0近傍のものが望まれていた。本発明は、上記観点に
鑑みてなされたものであり、高いQ値、比誘電率を維持
しつつ実用的な温度係数(0に近づけたもの)を示し、
優れた性能バランスを有するマイクロ波誘電体磁器組成
物(以下、単に誘電体磁器組成物という。)を提供する
ことを目的とする。[Problems to be Solved by the Invention] However, conventional ceramic compositions have problems such as a small dielectric constant or Q value, or an inability to obtain a desired temperature coefficient. In particular, there is a need for new microwave dielectric ceramic compositions having different compositions that have excellent relative dielectric constant, Q value, and temperature coefficient performance. In particular, BaO・4TiO2
A dielectric ceramic having a composition of (BaTi4O9) is known as a dielectric for microwaves. However, although this porcelain exhibits a high dielectric constant εr of about 38 and a high no-load Q value of about 3000, the temperature coefficient τf of the resonance frequency is large at about +50 ppm/°C, so it is designed as a microwave resonator. In this case, it was not possible to obtain a product with stable performance over temperature. For this reason, the above τf
It was desired that the value be close to 0. The present invention has been made in view of the above points, and exhibits a practical temperature coefficient (close to 0) while maintaining a high Q value and dielectric constant,
The purpose of the present invention is to provide a microwave dielectric ceramic composition (hereinafter simply referred to as a dielectric ceramic composition) having an excellent performance balance.
【0004】0004
【課題を解決するための手段】本発明者は、BaO・4
TiO2 (BaTi4 O9 )に、所定量のSnO
2 を含有させることによって、τf を可及的に0に
近づけることに成功して、本発明を完成するに至ったの
である。即ち、本発明の誘電体磁器組成物は、BaO・
4TiO2 (BaTi4 O9 )を主成分とし、こ
れにSnO2 を15重量%以下(但し、0を含まない
。)含有せしめたことを特徴とする。SnO2 を含有
させるのは、これを含まないBaO・4TiO2 (B
aTi4 O9 )はプラス側の大きなτf を示すが
、このSnO2 の添加により、このτf をマイナス
側に移行させることができるからである。そして、この
添加量が15重量%を越えると、他の特性の無負荷Q値
や比誘電率が著しく低下し、実用に供し得なくなるから
である。本磁器組成物は、所定の原料を所定量混合し、
焼結して製造される。例えば、焼結後BaOとなる原料
粉末とTiO2 粉末とSnO2 粉末とを前記組成式
に相当する量を混合仮焼し、これを粉砕して仮焼粉末を
製造し、この仮焼粉末を用いて成形、焼成して製造する
ことができる。[Means for Solving the Problems] The present inventor has discovered that BaO.4
A predetermined amount of SnO is added to TiO2 (BaTi4 O9).
By incorporating 2, they succeeded in making τf as close to 0 as possible, and completed the present invention. That is, the dielectric ceramic composition of the present invention contains BaO.
It is characterized by having 4TiO2 (BaTi4O9) as its main component, and containing 15% by weight or less of SnO2 (however, not including 0). The reason for containing SnO2 is BaO・4TiO2 (B
This is because although aTi4O9) exhibits a large τf on the positive side, the addition of SnO2 can shift this τf to the negative side. If the amount added exceeds 15% by weight, the other properties such as the no-load Q value and relative dielectric constant will drop significantly, making it impossible to put it into practical use. This porcelain composition is made by mixing a predetermined amount of predetermined raw materials,
Manufactured by sintering. For example, raw material powder that becomes BaO after sintering, TiO2 powder, and SnO2 powder are mixed and calcined in amounts corresponding to the above composition formula, and this is crushed to produce calcined powder, and this calcined powder is used to produce calcined powder. It can be manufactured by molding and firing.
【0005】[0005]
【実施例】以下実施例により本発明を具体的に説明する
。
(1)各試料の作製
純度99.9%のBaCO3 粉末と純度99.9%の
TiO2 粉末と純度99.8%のSnO2 粉末とを
、BaOとTiO2 との組成ではBaO・4TiO2
(BaTi4 O9 )となる組成、且つこれに表1
及び表2に示すように5、10、15重量%(前記Ba
O・4TiO2 に対する)のSnO2 の添加となる
組成になるように、所定量(全量で約650g)秤量混
合し、アイリッヒミキサーで乾式による一次粉砕及び混
合を施した。その後、大気雰囲気中1100℃の温度で
2時間仮焼した。
次いで、この仮焼粉末に適量の有機バインダー(ポリビ
ニルアルコールの約29g)とイオン交換水(約300
〜500g)を加え、20mmφのアルミナボールで二
次粉砕した後、噴霧乾燥により造粒し、この造粒された
素地を1000kg/cm2 のプレス圧で19mmφ
×10mmt(厚さ)の円柱状に成形した。次に、この
成形体を大気中、1250℃(試料No.1〜3)、1
275℃(試料No.4〜6)、1300℃(試料No
.7〜9)、1325℃(試料No.10〜12)、1
350℃(試料No.13〜15)及び1375℃(試
料No.16〜18)の各温度で、4時間焼成し、最後
に、16mmφ×8mmt(厚さ)の円柱状に研磨して
、誘電体試料(No.1〜18)とした。そして、Qu
値と比誘電率εr は、平行導体板型誘電体共振器法を
用いてTE011 モードより測定した。共振周波数の
温度係数τf は−30〜80℃の範囲で測定した。共
振周波数はほぼ4.5GHzである。[Examples] The present invention will be explained in detail with reference to Examples below. (1) Preparation of each sample BaCO3 powder with a purity of 99.9%, TiO2 powder with a purity of 99.9%, and SnO2 powder with a purity of 99.8% are used.
(BaTi4 O9), and Table 1
and 5, 10, 15% by weight as shown in Table 2 (the Ba
A predetermined amount (approximately 650 g in total) was weighed out and mixed so as to have a composition in which SnO2 was added to O.4TiO2, and primary pulverization and mixing were performed using an Eirich mixer in a dry manner. Thereafter, it was calcined in the air at a temperature of 1100° C. for 2 hours. Next, an appropriate amount of organic binder (approximately 29 g of polyvinyl alcohol) and ion exchange water (approximately 300 g of polyvinyl alcohol) are added to this calcined powder.
~500g) was added, secondary pulverized with 20mmφ alumina balls, and granulated by spray drying.
It was molded into a cylindrical shape of x10 mmt (thickness). Next, this molded body was placed in the atmosphere at 1250°C (sample Nos. 1 to 3),
275°C (Sample No. 4 to 6), 1300°C (Sample No.
.. 7-9), 1325°C (Sample No. 10-12), 1
The dielectric material was baked at 350°C (sample Nos. 13 to 15) and 1375°C (sample Nos. 16 to 18) for 4 hours, and finally polished into a cylindrical shape of 16 mmφ x 8 mmt (thickness). Body samples (No. 1 to 18) were used. And Qu
The value and relative dielectric constant εr were measured in TE011 mode using a parallel conductor plate type dielectric resonator method. The temperature coefficient τf of the resonance frequency was measured in the range of -30 to 80°C. The resonant frequency is approximately 4.5 GHz.
【0006】(2)性能評価
前記の各誘電体試料の特性を調べ、その結果を表1(焼
成温度;1250、1275、1300℃)及び表2(
焼成温度;1325、1350、1375℃)に示した
。(2) Performance evaluation The characteristics of each dielectric sample described above were investigated, and the results are shown in Table 1 (firing temperature: 1250, 1275, 1300°C) and Table 2 (
Firing temperature: 1325, 1350, 1375°C).
【表1】[Table 1]
【表2】
これらの結果によれば、SnO2 の添加量の増加とと
もにQu値が減少する。そして、焼成温度が低い程Qu
値は高い傾向にある。εr はSnO2 の添加量の増
加とともにやや減少し、焼成温度が高い程εr は高い
傾向にあるが、いずれの場合も29以上の高い値を示し
ている。
また、τf はSnO2 の添加量の増加とともにプラ
スの値からマイナスの値へと向かう。特に、焼成温度が
高温になるに従って、そのτf のマイナス方向への低
下が著しくなる。例えば、焼成温度が1375℃でSn
O2 の添加量が15重量%(No.18)では、−0
.96ppm/℃となる。特に、この場合はQu値の高
さよりもτf の低さに着目する利用分野では有用とな
る。また、焼結密度は、焼成温度が1325℃を越える
とあまり変わらないが、1275℃以上の場合には、い
ずれのものも4.3g/cm3 以上の高密度となる。[Table 2] According to these results, the Qu value decreases as the amount of SnO2 added increases. And, the lower the firing temperature, the lower the Qu
Values tend to be high. εr decreases slightly as the amount of SnO2 added increases, and the higher the firing temperature, the higher εr tends to be, but in all cases it shows a high value of 29 or more. Further, τf goes from a positive value to a negative value as the amount of SnO2 added increases. In particular, as the firing temperature increases, the decrease in τf in the negative direction becomes more significant. For example, when the firing temperature is 1375°C, Sn
When the amount of O2 added was 15% by weight (No. 18), -0
.. It becomes 96 ppm/°C. In particular, this case is useful in fields of application where the focus is on the low τf rather than the high Qu value. Further, the sintered density does not change much when the firing temperature exceeds 1325°C, but when the firing temperature exceeds 1275°C, the density becomes high at 4.3 g/cm 3 or more.
【0007】更に、焼結体の結晶構造を検討するために
前記試験No.16(焼成温度;1375℃、SnO2
添加量;5重量%)とNo.18(焼成温度;137
5℃、SnO2 添加量;15重量%)とNo.9(焼
成温度;1300℃、SnO2 添加量;15重量%)
の焼結体のX線回折を実施し、その結果を各々図1、図
2及び図3に示した。尚、表中の●印はBaTi4 O
9 、○印はBa2 Ti9 O20、△印はBa2
Ti5 O12、SnはSnO2 の各帰属ピークを示
す。図1と図2の結果によれば、SnO2 の添加量の
増加に従って、BaTi4 O9 が減少し、代わって
Ba2 Ti9 O20が増加した。これは、SnO2
の増加に伴ってQu値が減少してプラスからマイナス
の方向へ向かうことと対応している。また、図1と図3
に示すように、SnO2 の同添加量(15重量%)の
場合、焼成温度を比較すると、1300℃ではBaTi
4 O9 が中心組成であり、1375℃ではBa2
Ti9 O20が中心組成であった。これは、1375
℃よりも1300℃焼成の方がQu値がプラスの方に高
くなるという結果と対応している。以上より、BaTi
4 O9 +SnO2 系において、Qu値及びτf
の挙動は、BaTi4 O9 とBa2 Ti9 O2
0の生成量の影響を受けていると考えられる。従って、
BaTi4 O9 とBa2 Ti9 O20の組成比
を変えることにより、目的、用途に応じた種々のQu値
又はτf を具備するものとすることができる。以上よ
り、比誘電率、Qu値及び焼結密度を大きくとり、且つ
温度係数τf をできるだけ0に近づけたい場合には、
各設定値に応じて、SnO2 の添加量及び焼成温度を
適宜選択することができる。即ち、SnO2 の添加量
が5〜15重量%の場合τf を約−1〜+12ppm
/℃とすることができる。また、以下の特性を満足する
場合には、SnO2 の添加量を15重量%以下とする
とともに焼成温度を1250〜1350℃とすることが
できる。
比誘電率εr ;28〜36
Qu値;1200〜2600(4.5GHzの場合)温
度係数τf ;+2〜12 ppm/℃このうち、特
に焼成密度を4.3g/cm3 以上にするには127
5℃〜1350℃にて焼成することができ、この場合は
、全ての性能のバランスが大変よい。尚、本考案におい
ては、前記具体的実施例に示すものに限られず、目的、
用途に応じて本考案の範囲内で種々変更した実施例とす
ることができる。即ち、前記仮焼温度等の仮焼条件、焼
成温度等の焼成条件等は種々選択できる。また、BaO
となる原料も前記BaCO3 以外にも、過酸化物、水
酸化物、硝酸塩等を用いることもできる。Furthermore, in order to investigate the crystal structure of the sintered body, the above-mentioned Test No. 16 (firing temperature; 1375°C, SnO2
Addition amount: 5% by weight) and No. 18 (firing temperature; 137
5°C, SnO2 addition amount: 15% by weight) and No. 9 (Firing temperature: 1300°C, SnO2 addition amount: 15% by weight)
X-ray diffraction was performed on the sintered body, and the results are shown in FIGS. 1, 2, and 3, respectively. In addition, the ● mark in the table indicates BaTi4O
9, ○ mark is Ba2 Ti9 O20, △ mark is Ba2
Ti5O12 and Sn indicate peaks assigned to SnO2. According to the results shown in FIGS. 1 and 2, as the amount of SnO2 added increased, BaTi4 O9 decreased and Ba2 Ti9 O20 increased instead. This is SnO2
This corresponds to the fact that the Qu value decreases and goes from positive to negative as . Also, Figures 1 and 3
As shown in Figure 2, when comparing the firing temperatures with the same amount of SnO2 added (15% by weight), at 1300°C, BaTi
4O9 is the central composition, and at 1375℃ Ba2
Ti9O20 was the main composition. This is 1375
This corresponds to the result that the Qu value becomes higher in the positive direction when fired at 1300°C than when fired at 1300°C. From the above, BaTi
4 In the O9 +SnO2 system, the Qu value and τf
The behavior of BaTi4 O9 and Ba2 Ti9 O2
This is thought to be influenced by the amount of 0 produced. Therefore,
By changing the composition ratio of BaTi4O9 and Ba2Ti9O20, it is possible to provide various Qu values or τf depending on the purpose and use. From the above, if you want to increase the dielectric constant, Qu value, and sintered density, and also make the temperature coefficient τf as close to 0 as possible,
The amount of SnO2 added and the firing temperature can be appropriately selected according to each set value. That is, when the amount of SnO2 added is 5 to 15% by weight, τf is approximately -1 to +12 ppm.
/°C. Further, when the following characteristics are satisfied, the amount of SnO2 added can be set to 15% by weight or less, and the firing temperature can be set to 1250 to 1350°C. Specific dielectric constant εr; 28 to 36 Qu value; 1200 to 2600 (for 4.5 GHz) Temperature coefficient τf;
It can be fired at a temperature of 5°C to 1350°C, and in this case, the balance of all performances is very good. It should be noted that the present invention is not limited to what is shown in the above-mentioned specific examples;
Various modifications may be made within the scope of the present invention depending on the application. That is, the calcination conditions such as the calcination temperature, the calcination conditions such as the calcination temperature, etc. can be variously selected. Also, BaO
In addition to the above-mentioned BaCO3, peroxides, hydroxides, nitrates, etc. can also be used as raw materials.
【0008】[0008]
【発明の効果】以上のように、本発明の誘電体磁器組成
物は、Qu値、比誘電率εr 及び共振周波数の温度係
数τf が全て実用的範囲にあり、その性能バランスが
よい。特に温度係数が0に近づいた値となり、マイクロ
波共振器として設計する場合、温度に対して安定した性
能を示す。As described above, the dielectric ceramic composition of the present invention has a Qu value, a relative dielectric constant εr, and a temperature coefficient τf of the resonant frequency that are all within a practical range, and its performance is well balanced. In particular, the temperature coefficient is close to 0, and when designed as a microwave resonator, it exhibits stable performance with respect to temperature.
【図1】実施例において製造された試料No.16の焼
結体のX線回折の結果を示す説明図である。FIG. 1: Sample No. manufactured in Examples. It is an explanatory view showing the result of X-ray diffraction of the sintered compact of No. 16.
【図2】実施例において製造された試料No.18の焼
結体のX線回折の結果を示す説明図である。FIG. 2: Sample No. manufactured in the example. It is an explanatory view showing the result of X-ray diffraction of the sintered compact of No. 18.
【図3】実施例において製造された試料No.9の焼結
体のX線回折の結果を示す説明図である。FIG. 3: Sample No. manufactured in the example. 9 is an explanatory diagram showing the results of X-ray diffraction of the sintered body No. 9. FIG.
Claims (1)
O9)を主成分とし、これにSnO2 を15重量%以
下(但し、0を含まない。)含有せしめたことを特徴と
するマイクロ波誘電体磁器組成物。[Claim 1] BaO・4TiO2 (BaTi4
1. A microwave dielectric ceramic composition comprising SnO2 as a main component and 15% by weight or less (excluding 0) of SnO2.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03049044A JP3100173B2 (en) | 1991-02-20 | 1991-02-20 | Microwave dielectric porcelain composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP03049044A JP3100173B2 (en) | 1991-02-20 | 1991-02-20 | Microwave dielectric porcelain composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04265271A true JPH04265271A (en) | 1992-09-21 |
JP3100173B2 JP3100173B2 (en) | 2000-10-16 |
Family
ID=12820088
Family Applications (1)
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JP03049044A Expired - Fee Related JP3100173B2 (en) | 1991-02-20 | 1991-02-20 | Microwave dielectric porcelain composition |
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CN114409396A (en) * | 2021-11-18 | 2022-04-29 | 无锡鑫圣慧龙纳米陶瓷技术有限公司 | High-temperature stable microwave dielectric ceramic for WIFI and preparation method thereof |
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CN114409396A (en) * | 2021-11-18 | 2022-04-29 | 无锡鑫圣慧龙纳米陶瓷技术有限公司 | High-temperature stable microwave dielectric ceramic for WIFI and preparation method thereof |
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