JPH01283937A - Method for forming surface protective film of organic polymer electronic device - Google Patents
Method for forming surface protective film of organic polymer electronic deviceInfo
- Publication number
- JPH01283937A JPH01283937A JP11522788A JP11522788A JPH01283937A JP H01283937 A JPH01283937 A JP H01283937A JP 11522788 A JP11522788 A JP 11522788A JP 11522788 A JP11522788 A JP 11522788A JP H01283937 A JPH01283937 A JP H01283937A
- Authority
- JP
- Japan
- Prior art keywords
- film
- organic polymer
- si3n4
- polyimide
- electronic device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920000620 organic polymer Polymers 0.000 title claims abstract description 19
- 230000001681 protective effect Effects 0.000 title claims description 11
- 238000000034 method Methods 0.000 title claims description 7
- 229920001721 polyimide Polymers 0.000 claims abstract description 17
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001301 oxygen Substances 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- 230000005669 field effect Effects 0.000 abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004637 bakelite Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 229920000547 conjugated polymer Polymers 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- -1 moisture Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は有機高分子電子装置の表面保護膜形成法に関し
、とりわけ有機高子から成る半導体膜を用いた電界効果
トランジスタ等の表面保護膜形成法に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a method for forming a surface protective film of an organic polymer electronic device, and particularly to a method for forming a surface protective film of a field effect transistor or the like using a semiconductor film made of an organic polymer. Regarding the law.
最近、特開昭６２−３１１７４、特開昭６２−′３１１
７５、特開昭６１−１０３９２３、特開昭６２−８５４
６７、特開昭６２−１８３１８１等に示される如き、有
機高分子電子装置としての電界効果トランジスタが提案
されて居り、いずれも高分子材料組成を改善することに
より該有機高分子機能材料の酸素や水分の吸蔵による素
子特性の空気中使用時等の安定性を向上させようとする
ものである。Recently, JP-A-62-31174, JP-A-62-'311
75, JP 61-103923, JP 62-854
67, JP-A No. 62-183181, etc., field effect transistors as organic polymer electronic devices have been proposed, and in both cases, by improving the composition of the polymer material, oxygen and This is intended to improve the stability of device characteristics when used in air, etc. by absorbing moisture.
〔発明が解決しようとする課題］
しかし、上記従来技術に於ても尚且つ有機高分子電子装
置の大気中使用時の空気中の酸素や水分の吸蔵による素
子特性の劣化は避けられないと云う課題があった。[Problems to be Solved by the Invention] However, even with the above-mentioned conventional technology, deterioration of device characteristics due to absorption of oxygen and moisture in the air when organic polymer electronic devices are used in the atmosphere cannot be avoided. There was an issue.
本発明は、かかる従来技術の課題を解決し、酸素や水分
の吸蔵による素子特性の劣化の無い有機高分子電子装置
を製作する為に、新しく、有機高分子電子装置に表面保
護膜を形成する事を提案すると共に、該表面保護膜の新
しい構成とその製法を提供する事を目的とする。The present invention solves the problems of the prior art, and in order to produce an organic polymer electronic device without deterioration of device characteristics due to absorption of oxygen or moisture, the present invention newly forms a surface protective film on the organic polymer electronic device. The purpose of this paper is to propose a new structure of the surface protective film and its manufacturing method.
［課題を解決するための手段］
上記課題を解決するために、本発明は有機高分子電子装
置の表面保護膜形成法に係り、有機高分子電子装置の表
面にはポリイミド膜から成る表面保護膜を形成する手段
を取るか、あるいはシリコン窒化膜から成る表面保護膜
を形成する手段を取るか、あるいはポリイミド膜とシリ
コン窒化膜から成る多層膜による表面保護膜を形成する
手段を取る。[Means for Solving the Problems] In order to solve the above problems, the present invention relates to a method for forming a surface protective film on an organic polymer electronic device, and includes a surface protective film made of a polyimide film on the surface of the organic polymer electronic device. Alternatively, a method is taken to form a surface protective film made of a silicon nitride film, or a method is taken to form a surface protective film made of a multilayer film made of a polyimide film and a silicon nitride film.
〔イ乍 用１
ポリイミド膜は空気中の酸素や水分の侵入を阻止する作
用が有り、シリコン窒化膜は空気中の酸素や水分の侵入
を阻止する作用は抜群であり、その他の不純物の侵入を
も阻止する作用があり、ポリイミド膜とシリコン窒化膜
の２層構造膜は酸素や水分等の不純物阻止能力が一層向
上する作用があると共に、下地ポリイミド膜は上層シリ
コン窒化膜が付与する応力が大きい場合に、応力吸収層
としての作用もある。[Use 1] Polyimide film has the effect of blocking the intrusion of oxygen and moisture in the air, and silicon nitride film has an outstanding effect of blocking the intrusion of oxygen and moisture in the air, and also prevents the intrusion of other impurities. The two-layer structure film of polyimide film and silicon nitride film has the effect of further improving the ability to block impurities such as oxygen and moisture, and the underlying polyimide film has a large stress imparted by the upper silicon nitride film. In some cases, it also acts as a stress absorbing layer.
［実 施 例］ 以下、実施例により本発明を詳述する。[Example] Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図も本発明の一実施例である有機高分子機能膜を用
いた電界効果トランジスタの断面構造に係り、最も望ま
しい表面保護膜構造を示したものである。すなわち、ガ
ラスやエポキシあるいはベークライトの如きプリント基
板等から成る絶縁基板１の表面には光ＣＶＤ法やプラズ
マＣＶＤ法により低温で（１００℃〜３００℃）で５ｔ
ａＮ４膜２が形成され、更にその上に、金属膜あるいは
電導性高分子（（ＳＮ）ｎ等）膜から成るゲート電極３
がプリントされて形成され、更にその上に、ポリイミド
膜やＣＶＤ５ ｉ Ｏ□膜あるいはＣＶＤ５ｉｓＮ４膜
等から成るゲート絶縁膜４が形成され、更にその上に、
π−共役系高分子膜等から成る有機高分子半導体膜や有
機錯化合物膜等から成る有機高分子機能膜５が形成され
、更にその上にソース電極６及びドレイン電極７等が金
属膜や電導性高分子膜等により形成されて電界効果トラ
ンジスタが形成されて成り、該電界効果トランジスタの
表面には、ポリイミド膜８を形成後、光ＣＶＤ法やプラ
ズマＣＶＤ法等により低温（１００℃〜３００℃）にて
５ｉｓＮ４膜９が形成されて成る。尚、Ｓ ｉ ｓ Ｎ
ａ膜２は必ずしも必要ではなく、５ｉ−Ｎ、膜９及び
ポリイミド膜８はいずれか一方の膜のみで構成されても
良い事は云うまでもない。FIG. 1 also relates to the cross-sectional structure of a field effect transistor using an organic polymer functional film, which is an embodiment of the present invention, and shows the most desirable surface protection film structure. That is, the surface of an insulating substrate 1 made of a printed circuit board such as glass, epoxy, or Bakelite is coated with 5 tons of heat at a low temperature (100°C to 300°C) by photo-CVD or plasma CVD.
An aN4 film 2 is formed, and a gate electrode 3 made of a metal film or a conductive polymer ((SN)n, etc.) film is further formed thereon.
is printed and formed, and then a gate insulating film 4 made of a polyimide film, a CVD5 i O□ film, a CVD5isN4 film, etc. is formed, and furthermore,
An organic polymer functional film 5 made of an organic polymer semiconductor film made of a π-conjugated polymer film, an organic complex compound film, etc. is formed, and a source electrode 6, a drain electrode 7, etc. are formed on it using a metal film or a conductive film. A field effect transistor is formed by forming a polyimide film 8 on the surface of the field effect transistor, and then a polyimide film 8 is formed on the surface of the field effect transistor. ), a 5isN4 film 9 is formed. Furthermore, S is N
It goes without saying that the a film 2 is not necessarily necessary, and that the 5i-N film 9 and the polyimide film 8 may be composed of only one of them.
［発明の効果］
本発明により有機高分子電気装置への大気中酸素や水分
あるいはその他汚染不純物の侵入による特性劣化や特性
の不安定性がなくなり、電気的特性が安定で長寿命の有
機高分子電子装置が提供できる効果がある。[Effects of the Invention] The present invention eliminates characteristic deterioration and instability of characteristics due to the intrusion of atmospheric oxygen, moisture, and other contaminant impurities into organic polymer electrical devices, and provides organic polymer electronic devices with stable electrical characteristics and long life. There are effects that the device can provide.
第１図は本発明の一実施例を示す有機高分子電子装置の
断面図である。
１・・・絶縁基板
２・・・Ｓｉ ｓ Ｎ ａ膜
３・・・ゲート電極
４・・・ゲート絶縁膜
５・・・有機高分子機能膜
６・・・ソース電極
７・・・ドレイン電極
８・・・ポリイミド膜
９・・・Ｓｔ ｓＮａ膜
以上
出願人 セイコーエプソン株式会社FIG. 1 is a sectional view of an organic polymer electronic device showing one embodiment of the present invention. 1... Insulating substrate 2... Sis Na film 3... Gate electrode 4... Gate insulating film 5... Organic polymer functional film 6... Source electrode 7... Drain electrode 8 ...Polyimide film 9...St sNa film and above Applicant: Seiko Epson Corporation
Claims (1)
表面保護膜が形成されるか、あるいはシリコン窒化膜か
ら成る表面保護膜が形成されるか、あるいはポリイミド
膜とシリコン窒化膜から成る多層膜による表面保護膜が
形成されて成る事を特徴とする有機高分子電子装置の表
面保護膜形成法。A surface protection film made of a polyimide film, a surface protection film made of a silicon nitride film, or a multilayer film made of a polyimide film and a silicon nitride film is formed on the surface of the organic polymer electronic device. A method for forming a surface protective film on an organic polymer electronic device, characterized in that a protective film is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11522788A JPH01283937A (en) | 1988-05-11 | 1988-05-11 | Method for forming surface protective film of organic polymer electronic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11522788A JPH01283937A (en) | 1988-05-11 | 1988-05-11 | Method for forming surface protective film of organic polymer electronic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01283937A true JPH01283937A (en) | 1989-11-15 |
Family
ID=14657501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11522788A Pending JPH01283937A (en) | 1988-05-11 | 1988-05-11 | Method for forming surface protective film of organic polymer electronic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01283937A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6243146B1 (en) * | 1996-11-26 | 2001-06-05 | Samsung Electronics Co., Ltd. | Liquid crystal displays using organic insulating material and manufacturing methods thereof |
| US6940566B1 (en) | 1996-11-26 | 2005-09-06 | Samsung Electronics Co., Ltd. | Liquid crystal displays including organic passivation layer contacting a portion of the semiconductor layer between source and drain regions |
| US7187006B2 (en) | 2003-03-27 | 2007-03-06 | Seiko Epson Corporation | Electro-optical device, method of manufacturing the same, and electronic apparatus |
| US7452738B2 (en) | 2004-10-22 | 2008-11-18 | Seiko Epson Corporation | Method of manufacturing organic electroluminescent device and organic electroluminescent device |
| CN100466328C (en) * | 2003-10-29 | 2009-03-04 | 铼宝科技股份有限公司 | Organic light-emitting display panel |
| US7508128B2 (en) | 2002-08-29 | 2009-03-24 | Seiko Epson Corporation | Electroluminescent device with barrier layer structure, method for manufacturing the same, and electronic apparatus |
| US8779658B2 (en) | 2002-10-25 | 2014-07-15 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
-
1988
- 1988-05-11 JP JP11522788A patent/JPH01283937A/en active Pending
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6243146B1 (en) * | 1996-11-26 | 2001-06-05 | Samsung Electronics Co., Ltd. | Liquid crystal displays using organic insulating material and manufacturing methods thereof |
| US6597415B2 (en) | 1996-11-26 | 2003-07-22 | Samsung Electronics Co., Ltd. | Thin film transistor substrates for liquid crystal displays including thinner passivation layer on storage capacitor electrode than other regions |
| US6862050B2 (en) | 1996-11-26 | 2005-03-01 | Samsung Electronics Co., Ltd. | Liquid crystal displays using organic insulating material for a gate insulating layer and/or having photolithographic formed spacers |
| US6940566B1 (en) | 1996-11-26 | 2005-09-06 | Samsung Electronics Co., Ltd. | Liquid crystal displays including organic passivation layer contacting a portion of the semiconductor layer between source and drain regions |
| US7508128B2 (en) | 2002-08-29 | 2009-03-24 | Seiko Epson Corporation | Electroluminescent device with barrier layer structure, method for manufacturing the same, and electronic apparatus |
| US8648528B2 (en) | 2002-08-29 | 2014-02-11 | Seiko Epson Corporation | Electroluminescent device, method for manufacturing the same, and electronic apparatus |
| US9450204B2 (en) | 2002-10-25 | 2016-09-20 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US9065074B2 (en) | 2002-10-25 | 2015-06-23 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US8779658B2 (en) | 2002-10-25 | 2014-07-15 | Seiko Epson Corporation | Electro-optical device and electronic apparatus |
| US7700385B2 (en) | 2003-03-27 | 2010-04-20 | Seiko Epson Corporation | Electro-optical device, method of manufacturing the same, and electronic apparatus |
| US7187006B2 (en) | 2003-03-27 | 2007-03-06 | Seiko Epson Corporation | Electro-optical device, method of manufacturing the same, and electronic apparatus |
| CN100466328C (en) * | 2003-10-29 | 2009-03-04 | 铼宝科技股份有限公司 | Organic light-emitting display panel |
| US7956355B2 (en) | 2004-10-22 | 2011-06-07 | Seiko Epson Corporation | Method of manufacturing organic electroluminescent device and organic electroluminescent device |
| US7667284B2 (en) | 2004-10-22 | 2010-02-23 | Seiko Epson Corporation | Method of manufacturing organic electroluminescent device and organic electroluminescent device |
| US7452738B2 (en) | 2004-10-22 | 2008-11-18 | Seiko Epson Corporation | Method of manufacturing organic electroluminescent device and organic electroluminescent device |
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