JPH01278053A - High power type semiconductor device - Google Patents
High power type semiconductor deviceInfo
- Publication number
- JPH01278053A JPH01278053A JP10790388A JP10790388A JPH01278053A JP H01278053 A JPH01278053 A JP H01278053A JP 10790388 A JP10790388 A JP 10790388A JP 10790388 A JP10790388 A JP 10790388A JP H01278053 A JPH01278053 A JP H01278053A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor element
- support plate
- semiconductor device
- retaining plate
- thermal stress
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 230000003014 reinforcing effect Effects 0.000 claims abstract description 16
- 239000011347 resin Substances 0.000 claims abstract description 14
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 230000008646 thermal stress Effects 0.000 abstract description 12
- 238000005452 bending Methods 0.000 abstract description 8
- 238000007789 sealing Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は高電力を取扱う樹脂封止絶縁型の半導体装置に
関し、特にリードフレームを改善した半導体装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a resin-sealed insulated semiconductor device that handles high power, and particularly to a semiconductor device with an improved lead frame.
従来、この種の半導体装置の一例として、パワートラン
ジスタを第３図に示す。第３図（ａ）は平面方向の断面
図、同図（ｂ）及び（ｃ）は夫々同図（ａ）のＸ−Ｘ、
Ｙ−Ｙ線縦断面図である。A power transistor is shown in FIG. 3 as an example of a conventional semiconductor device of this type. FIG. 3(a) is a cross-sectional view in the plane direction, and FIG. 3(b) and (c) are XX in FIG. 3(a), respectively.
It is a longitudinal cross-sectional view taken along the Y-Y line.
図において、リードフレームｌはヒートシンクとしての
平板状をした支持板２と、３本の外部リード３．４．５
とを有しており、中央の外部り一ド３は支持板２と一体
に形成し、その基端部においてＬ字形に曲げ形成してい
る。そして、支持板２上に半導体素子６を搭載し、その
電極パッドを金属細線７で前記外部リード４，５に電気
接続した上で、これらを樹脂８で封止している。In the figure, the lead frame l includes a flat support plate 2 as a heat sink, and three external leads 3, 4, 5.
The central outer guide 3 is formed integrally with the support plate 2, and is bent into an L-shape at its base end. A semiconductor element 6 is mounted on the support plate 2, and its electrode pads are electrically connected to the external leads 4 and 5 using thin metal wires 7, and then these are sealed with a resin 8.
この半導体装置では、支持板２に設けた取付孔９を利用
して図外の放熱板に取着することにより、半導体素子６
に発生した熱は、支持板２を通して放熱板に伝達させ、
ここから放熱させる。また、一部は半導体素子６から樹
脂８を通して表面から大気に放熱させている。In this semiconductor device, the semiconductor element 6 is attached to a heat sink (not shown) using the attachment hole 9 provided in the support plate 2.
The heat generated is transferred to the heat sink through the support plate 2,
Dissipate heat from here. Further, a part of the heat is radiated from the surface of the semiconductor element 6 to the atmosphere through the resin 8.
ところで、この種の半導体装置においては、半導体素子
６に発生した熱により半導体装置自体が加熱されると、
支持板２．半導体素子６及び樹脂８の熱膨張係数が夫々
異なるため、半導体素子に応力が発生する。即ち、半導
体装置の温度が樹脂封止温度より低いときには第４図（
ａ）のように、樹脂の収縮により上に凹の断面形状とな
り、逆に樹脂封止温度より高いときには同図（ｂ）のよ
うに上に凸の断面形状となる。この温度変化に伴う変形
により半導体素子６に応力が加えられ、半導体素子が破
損する等して半導体装置の寿命を短かいものにしている
。By the way, in this type of semiconductor device, when the semiconductor device itself is heated by the heat generated in the semiconductor element 6,
Support plate 2. Since the semiconductor element 6 and the resin 8 have different coefficients of thermal expansion, stress is generated in the semiconductor element. That is, when the temperature of the semiconductor device is lower than the resin sealing temperature, the temperature shown in FIG.
As shown in (a), the cross-sectional shape becomes concave upward due to resin contraction, and conversely, when the temperature is higher than the resin sealing temperature, the cross-sectional shape becomes convex upward as shown in (b) of the same figure. The deformation caused by this temperature change applies stress to the semiconductor element 6, causing damage to the semiconductor element and shortening the life of the semiconductor device.
このため、従来では支持板２の厚さを厚クシてリードフ
レームの剛性を高め、半導体素子６への応力の緩和を図
っているが、これでは半導体装置自体が厚くなるととも
に、リードフレームの支持板２とリード３とが異なる厚
さに形成されることになり、加工が煩雑でかつコスト高
になるという問題がある。For this reason, in the past, the thickness of the support plate 2 was increased to increase the rigidity of the lead frame and to alleviate the stress on the semiconductor element 6, but this resulted in the semiconductor device itself becoming thicker and the support of the lead frame Since the plate 2 and the lead 3 are formed to have different thicknesses, there is a problem that the processing is complicated and the cost is high.
本発明はリードフレームを厚く形成することなくその剛
性を高め、熱による半導体装置の寿命の劣化を防止した
高電力型半導体装置を提供することを目的としている。SUMMARY OF THE INVENTION An object of the present invention is to provide a high-power semiconductor device in which the rigidity of the lead frame is increased without making it thick, and the life of the semiconductor device is prevented from deteriorating due to heat.
本発明の高電力型半導体装置は、半導体素子を搭載し、
かつこの半導体素子とともに樹脂封止されるリードフレ
ームの支持板に、その側縁及び端縁部を折り起こした補
強片を一体に形成した構成としている。A high power semiconductor device of the present invention is equipped with a semiconductor element,
Further, a reinforcing piece with side edges and end edges folded up is integrally formed on the support plate of the lead frame which is resin-sealed together with the semiconductor element.
〔作用］
上述した構成では、支持板の側縁及び端縁に折り起こし
た補強片により、支持板の平面Ｘ方向。[Function] In the above-described configuration, the reinforcing pieces folded up on the side edges and end edges of the support plate provide support in the X direction of the plane of the support plate.
Ｙ方向の剛性を高め、熱応力による支持板の曲げを抑制
し、かつこの曲げによる半導体素子への熱応力の影響を
緩和させる。The rigidity in the Y direction is increased, the bending of the support plate due to thermal stress is suppressed, and the influence of thermal stress on the semiconductor element due to this bending is alleviated.
次に、本発明を図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の第１実施例を示しており、第１図（ａ
）は平面方向の断面図、同図（ｂ）及び（ｃ）は夫々同
図（ａ）のＸ−Ｘ、Ｙ−Ｙ線群断面図である。FIG. 1 shows a first embodiment of the present invention, and FIG.
) is a cross-sectional view in the planar direction, and FIGS. 3(b) and (c) are cross-sectional views taken along line X-X and Y-Y in FIG. 1(a), respectively.
図において、リードフレームｌはヒートシンクとしての
平板状でかつ矩形状をした支持板２と、３本の外部リー
ド３，４．５とを有しており、中央の外部リード３は支
持板２と一体に形成し、その基端部においてＬ字形に曲
げ形成している。この支持板２は一部に素子搭載部を構
成し、かつ先端側の位置には取付孔９を開設している。In the figure, a lead frame l has a flat rectangular support plate 2 serving as a heat sink, and three external leads 3, 4.5, and the central external lead 3 is connected to the support plate 2. It is formed integrally and is bent into an L-shape at its base end. A portion of the support plate 2 constitutes an element mounting portion, and a mounting hole 9 is provided at the tip end.
更に、支持板２の両側縁にはその縁部の一部を折り起こ
して立設させた補強片１０．１１を一体に形成し、また
前記外部リード３が一体形成された側の端縁には外部リ
ード３の基端部と一体となるように縁部の全体を折り起
こして立設した補強片１２を形成している。Furthermore, reinforcing pieces 10 and 11 are integrally formed on both side edges of the support plate 2, and reinforcing pieces 10 and 11 are formed by folding up a part of the edges, and reinforcing pieces 10 and 11 are formed on the side edges on which the external leads 3 are integrally formed. A reinforcing piece 12 is formed by folding up the entire edge so as to be integrated with the base end of the external lead 3.
そして、支持板２上に半導体素子６を搭載し、その電極
パッドを金属細線７で前記外部リード４゜５に電気接続
した上で、これらを樹脂８で封止している。A semiconductor element 6 is mounted on the support plate 2, and its electrode pads are electrically connected to the external leads 4.5 by thin metal wires 7, and these are sealed with a resin 8.
この半導体装置では、支持板２に設けた取付孔９を利用
して図外の放熱板に取着することにより、半導体素子６
に発生した熱は、支持板２を通して放熱板に伝達させ、
ここから放熱させる。また、一部は半導体素子６から樹
脂８を通して表面から大気に放熱させることはこれまで
と同じである。In this semiconductor device, the semiconductor element 6 is attached to a heat sink (not shown) using the attachment hole 9 provided in the support plate 2.
The heat generated is transferred to the heat sink through the support plate 2,
Dissipate heat from here. Also, as in the previous example, part of the heat is radiated from the surface of the semiconductor element 6 to the atmosphere through the resin 8.
そして、この構造では、支持板２は両側の補強片ｔｏ、
１１によってＹ−Ｙ線方向の剛性が強化され、また補強
片１２によってＸ−Ｘ線方向の剛性が強化されている。In this structure, the support plate 2 has reinforcing pieces on both sides,
11 strengthens the rigidity in the Y-Y direction, and the reinforcing piece 12 strengthens the rigidity in the XX direction.
このため、支持板２．半導体素子６及び樹脂８の熱膨張
係数の相違による熱応力がリードフレームに加えられて
も、支持板２がこの熱応力によっても曲げられることが
抑制でき、半導体素子６への熱応力の影響を緩和して素
子の割れや支持板２からの剥離等が防止でき、半導体装
置の信頼性を確保する。For this reason, the support plate 2. Even if thermal stress is applied to the lead frame due to the difference in thermal expansion coefficients between the semiconductor element 6 and the resin 8, the support plate 2 can be prevented from being bent by this thermal stress, and the influence of thermal stress on the semiconductor element 6 can be suppressed. The relaxation prevents cracking of the element, separation from the support plate 2, etc., and ensures reliability of the semiconductor device.
第２図（ａ）乃至第２図（ｃ）は本発明の第２実施例の
平面方向の断面図及びそのＸ−Ｘ線、Ｙ−Ｙ線に沿う断
面図を示している。なお、第１図と同一部分には同一符
号を付しである。FIGS. 2(a) to 2(c) show a planar cross-sectional view of a second embodiment of the present invention, and cross-sectional views taken along lines X--X and Y--Y. Note that the same parts as in FIG. 1 are given the same reference numerals.
この実施例では、支持板２の端部に形成した補強片（第
１図の符号１２）を外部リード３の両側に設けたスリッ
トにより補強片１２Ａとして分離形成し、この補強片１
２Ａを樹脂８に食い込ませた構造としている。この食い
込みにより、補強片１２Ａと樹脂８との一体化を更に向
上させ、支持板２におけるＹ−Ｙ線方向の剛性を一層強
化させている。In this embodiment, a reinforcing piece (12 in FIG. 1) formed at the end of the support plate 2 is separated by a slit provided on both sides of the external lead 3 as a reinforcing piece 12A.
It has a structure in which 2A is bitten into the resin 8. This biting further improves the integration of the reinforcing piece 12A and the resin 8, and further strengthens the rigidity of the support plate 2 in the Y-Y line direction.
以上説明したように本発明は、リードフレームの支持板
には、その側縁及び端縁部を折り起こした補強片を一体
に形成しているので、これらの補強片により、支持板の
平面Ｘ方向、Ｙ方向の剛性を高め、熱応力による支持板
の曲げを抑制し、かつこの曲げによる半導体素子への熱
応力の影響を緩和させることができる。これにより、支
持板を厚く形成することなく剛性を高め、半導体装置の
寿命を高めることができるとともに半導体装置の薄型化
及び低コスト化を達成できる。As explained above, in the present invention, the supporting plate of the lead frame is integrally formed with reinforcing pieces whose side edges and end edges are folded up. It is possible to increase the rigidity in the direction and the Y direction, suppress bending of the support plate due to thermal stress, and alleviate the influence of thermal stress on the semiconductor element due to this bending. As a result, the rigidity can be increased without making the support plate thicker, the life of the semiconductor device can be increased, and the thickness and cost of the semiconductor device can be reduced.
第１図は本発明の第１実施例を示し、同図（ａ）は平面
断面図、同図（ｂ）はそのｘ −Ｘ ＆；ｌ縦断面図、
同図（ｃ）はそのＹ−Ｙ締縮断面図、第２図は本発明の
第２実施例を示し、同図（ａ）は平面断面図、同図（ｂ
）はそのＸ−Ｘ線縦断面図、同図（ｃ）はそのＹ−Ｙ締
縮断面図、第３図は従来構造を示し、同図（ａ）は平面
断面図、同図（ｂ）はそのＸ−Ｘ線縦断面図、同図（ｃ
）はそのＹ−Ｙ締縮断面図、第４図（ａ）及び（ｂ）は
熱応力を説明するためにモデル化した図であり、夫々第
３図（ｂ）と同様の縦断面状態を示している。
■・・・リードフレーム、２・・・支持板、３，４．５
・・・外部リード、６・・・半導体素子、７・・・金属
細線、８・・・樹脂、９・・・取付孔、１０．１１・・
・補強片、１２．１２Ａ・・・補強片。
第１図
第２図
第３図
（ａ）
第４図
（ａ）
（ｂ）FIG. 1 shows a first embodiment of the present invention; FIG. 1(a) is a plan sectional view, FIG. 1(b) is an x-X &;
FIG. 2(c) is a Y-Y compressed sectional view, FIG. 2 is a second embodiment of the present invention, FIG. 2(a) is a plan sectional view, and FIG.
) is a vertical sectional view taken along line X-X, FIG. 3(c) is a compressed Y-Y sectional view, FIG. 3 shows a conventional structure, FIG. is a vertical cross-sectional view taken along the line X-X, and the same figure (c
) is a Y-Y compressed cross-sectional view, and Figures 4(a) and (b) are diagrams modeled to explain thermal stress, and each shows the same vertical cross-sectional state as Figure 3(b). It shows. ■... Lead frame, 2... Support plate, 3, 4.5
...External lead, 6...Semiconductor element, 7...Metal thin wire, 8...Resin, 9...Mounting hole, 10.11...
- Reinforcement piece, 12.12A... Reinforcement piece. Figure 1 Figure 2 Figure 3 (a) Figure 4 (a) (b)
Claims (1)
体素子を搭載し、かつこの半導体素子を外部リードに電
気接続した上で前記支持板とともに樹脂封止してなる高
電力型半導体装置において、前記支持板の側縁及び端縁
には夫々支持板の縁部を折り起こした補強片を一体に形
成したことを特徴とする高電力型半導体装置。1. A high power semiconductor device in which a semiconductor element is mounted on a support plate of a lead frame formed in a rectangular shape, this semiconductor element is electrically connected to external leads, and then sealed with resin together with the support plate, A high-power semiconductor device characterized in that reinforcing pieces are integrally formed on the side edges and end edges of the support plate, respectively, by folding up the edges of the support plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10790388A JPH01278053A (en) | 1988-04-30 | 1988-04-30 | High power type semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10790388A JPH01278053A (en) | 1988-04-30 | 1988-04-30 | High power type semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01278053A true JPH01278053A (en) | 1989-11-08 |
Family
ID=14470992
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10790388A Pending JPH01278053A (en) | 1988-04-30 | 1988-04-30 | High power type semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01278053A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5530284A (en) * | 1995-03-06 | 1996-06-25 | Motorola, Inc. | Semiconductor leadframe structure compatible with differing bond wire materials |
-
1988
- 1988-04-30 JP JP10790388A patent/JPH01278053A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5530284A (en) * | 1995-03-06 | 1996-06-25 | Motorola, Inc. | Semiconductor leadframe structure compatible with differing bond wire materials |
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