JPH01276556A - Ion implanter - Google Patents

Abstract

PURPOSE:To prevent the vibration of a vibration source from being transmitted to other device constituting equipment via a frame by providing the device constituting equipment serving as the vibration source on a support bed independently provided from the floor face. CONSTITUTION:A device constituting equipment serving as a vibration source, e.g., a vacuum pump 14, is stored in a machine base 11. This vacuum pump 14 is arranged on an oil pan 16 supported by four support legs 15 directly arranged on a floor 20 through four openings 11b provided on the base substrate 11a of the machine base 11, the preset gap of about several cm, for example, is provided between the oil pan 16 and the base substrate 11a. The vibration of the vacuum pump 14 is prevented from being transmitted to a wafer transfer system 13, for example, via the machine base 11.

Description

[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to an ion implantation device.

(Prior Art) Generally, ion implantation devices are widely used as devices for doping impurities into objects such as semiconductor wafers.

Such an ion implantation apparatus is configured as follows, for example. In other words, ions generated by an ion source are electrically drawn out, converted into a desired ion beam using an analyzer magnet, an accelerator tube, an electron lens, etc., and then irradiated onto a semiconductor wafer placed on a platen while scanning in the X-Y direction. and then implant ions. Further, as shown in FIG. 2, many ion implantation apparatuses include a housing (so-called machine base) 1 for accommodating or supporting apparatus components. This machine base 1 is made of, for example, an iron plate with a thickness of about several millimeters, and each device component, such as a vacuum chamber 2 and a wafer transfer system 3, is provided on this machine base 1.

Further, for example, a vacuum pump 4 and the like are arranged on a base substrate 1a within the machine base 1 and housed within the machine base 1.

(Problem to be solved by the invention) However, for example, equipment components such as vacuum pumps,
Vibration is generated along with the drive.

Therefore, in the conventional ion implantation apparatus described above, vibrations from a vibration source such as a vacuum pump are transmitted to, for example, the semiconductor wafer transport system, and the semiconductor wafers housed in the wafer cassette are moved by the vibrations and transported. However, there are problems in that it becomes difficult to perform vibrations, and dust is generated due to this vibration.

Additionally, in order to avoid the above problem, it may be possible to separately install a vibration source such as a vacuum pump on the side of the machine base instead of housing it inside the machine base. A problem arises in that the floor space increases.

The present invention has been made in response to such conventional circumstances, and reduces vibration propagating from a vibration source such as a vacuum pump to other parts of the device compared to the conventional method without causing an increase in occupied floor space. It is an object of the present invention to provide an ion implantation device that can prevent problems from occurring in device components and generation of dust due to vibration.

[Structure of the Invention] (Means for Solving the Problems) That is, the present invention provides an ion implantation apparatus that implants ions by irradiating an ion beam onto a workpiece provided in an airtight container, which supports the airtight container. The present invention is characterized in that a device serving as a vibration source is provided on a support stand provided on the floor independently of the support stand.

(Function) By installing at least one device component that becomes a vibration source, such as a vacuum pump, on a support stand that is installed independently from the floor, the vibrations of the vibration source such as the vacuum pump can be transmitted through the casing. It can prevent information from being transmitted to other equipment components.
Additionally, a vibration source such as a vacuum pump may be placed inside the housing.

Therefore, it is possible to prevent problems from occurring in other device components and generation of dust due to vibration without causing an increase in the occupied floor space.

(Embodiment) An embodiment of the ion implantation apparatus of the present invention will be described below with reference to the drawings.

The housing (machine base) 11 is made of, for example, an iron plate with a thickness of several millimeters, and each device component, such as a vacuum chamber 12 and a wafer transfer system 13, is provided on this machine base 11. . In addition, vacuum chamber 1
An ion source, an analyzer magnet, etc. (not shown) are connected to the side of the vacuum chamber 12, and an electrode for forming an electron lens (not shown), an electrode for scanning in the X direction, an electrode for scanning in the Y direction, and a semiconductor are provided in the vacuum chamber 12. Device components such as a platen for holding wafers are arranged.

Further, inside the machine base 11, a device component that serves as a vibration source, such as a vacuum pump 14, is housed. This vacuum pump 14 is connected to the base substrate 11a of the machine base 11.
It is placed on an oil pan 16 that is supported by four support legs 15 that are placed directly on the floor 20 through four openings 11b provided in the base board 14a. A predetermined interval of, for example, several centimeters is provided between them.

In the ion implantation apparatus of this embodiment having the above configuration, a semiconductor wafer housed in a wafer cassette is loaded into the vacuum chamber 12 via the load lock chamber by the wafer transfer system 13 and placed on the platen. Then, the semiconductor wafer is scanned and irradiated with a predetermined ion beam to perform ion implantation.

At this time, the vacuum pump 14 is driven and the vacuum chamber 12 is
However, the vibrations of the vacuum pump 14 are not directly transmitted to the machine base 11, and are transmitted to, for example, the wafer transfer system 13 via the machine base 11. vibrations are not transmitted. Therefore, for example, the semiconductor wafers housed in the wafer cassette will not move due to vibrations, causing problems, and the vibrations will not generate dust.

Furthermore, compared to the case where the vacuum pump 14 is not housed in the machine base 11 and is placed, for example, on the side of the machine base 11, the occupied floor area can be reduced, and the space can be used more effectively. .

Note that an ion implanter usually has multiple vacuum pumps installed, so all vacuum pumps can be connected to one vacuum pump.
4, it is preferable to configure it so that it is directly supported on the floor 2o. Moreover, it goes without saying that, similar to the vacuum pump 14, other vibration sources can also be configured to be directly supported on the floor 2o.

[Effects of the Invention] As explained above, according to the ion implantation apparatus of the present invention, the vibration propagates from a source of vibration such as a vacuum pump to other parts of the apparatus more easily than before, without causing an increase in the occupied floor area. Vibration can be reduced, and it is possible to prevent problems from occurring in equipment components and generation of dust due to vibration.

[Brief explanation of the drawing]

FIG. 1 is a diagram showing the main part of an ion implantation apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing the main part of a conventional ion implantation apparatus. 11...Machine base (housing), 11a...
...Base board, llb...Opening, 12...
... Vacuum chamber, 13 ... Wafer transfer system, 14 ... Vacuum pump, 15 ... Support legs, 16 ... Oil pan, 20. ·····floor. Applicant Chil°Parian Co., Ltd. Agent Patent Attorney Sasa Suyama - Figure 1 Figure 2

Claims (1)

[Claims] (1) In an ion implanter that implants ions by irradiating an ion beam onto a workpiece placed in an airtight container, a vibration source is installed on a support stand installed on the floor independently of the support stand that supports the airtight container. An ion implantation device characterized by being provided with a device.