JPH01273668A - Electroheating member - Google Patents

Abstract

PURPOSE:To improve the working quality of the heating member by forming an area having the specific resistance higher by specific times than the specific resistance of base metals to the parts of the base metals which come into contact with a work and forming a film which has a prescribed contact angle or above with the molten metal of a solder, etc. thereon. CONSTITUTION:The ions which are made into high energy by a magnetic field and electric field are implanted into the conductive base metals 13 by an ion implantation device, etc. The insulating region having the specific resistance higher by >=100 times the specific resistance of the base metals 13 is formed to the parts of the base metals 13 which come into contact with the work. The film which has >=10 deg. contact angle with molten solder is then formed to the insulating region of the base metals 13 via a capacity coupling type plasma CVD device and soldering of IC lead wires is executed. Since the insulating region is formed on the base metals, the shunting of electric current from the heating members 13 to a circuit board is eliminated and the sticking of the solder is prevented by the film having the large contact angle. The quality of the heating members is, therefore, improved.

Description

Detailed Description of the Invention [Object of the Invention] (Industrial Application Field) The present invention relates to an energizing heating member for processing workpieces such as lead wires by applying electricity to a conductive substance to generate Joule heat. .

(Conventional technology) In recent years, factory automation has made remarkable progress.

An example of this is a device for soldering integrated circuits (ICs) to substrates. In this device, Fe, Mo, W, Ta,
A heating member made of a base material made of a conductive material such as Cu, AI, or Stair Vs is energized to generate Joule heat, and the heating member presses multiple lead wires against the board at once. , doing soldering. Usually, ICs have lead wires coming out on three or four sides, so the heating members are installed in parallel or surrounding two or four of them.
electrically connected in series. Although it may be possible to use an average current, in this case, the entire device receives a large amount of blood feeding with a safe current.

When soldering is performed by directly contacting the heating member made of a conductive material with the lead wires of the IC, current flows from the heating member to the wiring on the board at the point where the wiring on the board connects the heating members connected in series. There was a problem that the current shunted and the wiring on the board broke. Therefore, the inventor of the present invention
! It has previously been proposed to prevent the shunting of current from the heating element to the wiring of the substrate by forming an insulating region on the surface of a matrix made of a magnetic substance.

(Problem to be Solved by the Invention) However, such a heating member has a drawback in that solder tends to adhere to the heating member depending on the material of the insulating region and the state of the surface being exposed.

In the present invention, an insulating region is formed at least in the part of the heating member that is in contact with the IC lead wire, and the surface of this insulating region is further coated with a coating made of a material that has poor wettability with solder and is difficult for solder to adhere to. The purpose was to prevent solder from adhering to the heating member and to provide good processing.

[Structure of the invention]

(Means for Solving the Problems) The electrically heating member of the present invention has a region on the surface of a base material made of a conductive material, at least in a portion in contact with a lead wire, having a specific resistance of 100 times or more that of the base material. Furthermore, the surface of this Si region is coated with a film made of a material having a contact angle of 10(f or more) with a molten metal containing at least one of lead or tin as a main component.

Preferred materials for the film to which solder does not easily adhere include Ti, W, Ag, Au, and Cr.

A material containing at least one element selected from C, 0, and N is used. The reason for this is the energization described below. First, the coating must be made of a material that does not peel off from the base material during heat cycles from about 150°C to about 300°C. Also, autome-7
In a soldering device, the temperature of the heating member is raised and lowered in cycles of several seconds, so the material of the coating must have high thermal conductivity. Therefore, if the thickness of the film exceeds 1 μm, the thermal conductivity is 1 wm-'
You must roll with -1 or higher. All materials containing the above-mentioned elements have high thermal conductivity.

Further, since the heating material has a potential difference of about 1 to IOV with respect to the ground potential, the film needs to have a thickness that does not cause dielectric breakdown with respect to this voltage. Therefore, the thickness of the coating is required to be 500λ or more, preferably 100OA or more, and when wear resistance is also taken into account, it is necessary to be about 2 μm.

Considering thermal conductivity, it is not preferable to make the thickness 5 μm or more. Methods for coating this film include sputtering, ion grating, vacuum evaporation, glass vCV
D, ECR; y” lasma cVD, thermal CVD.

There is optical CvD, etc. Among these, the film has good layer density, can be processed at relatively low temperatures, and its properties are not impaired.
Considering that the electrical characteristics of the film can be easily controlled, plasma CVD method and ECR plasma CVD method are particularly suitable.

(Function) An insulating region is formed at least in the part of the cutting edge heating member that is in contact with the IC lead wire, and the surface of this insulating region is further coated with a film that has poor wettability with solder to perform heating. The problem of solder adhering to parts has been eliminated.

(Example) In the heating member of the present invention, a conductive material is processed as shown in FIG. It is coated with a film.

Automated soldering is used in an apparatus in which the heating members are installed so as to surround them on all sides as shown in FIG. 2, and they are electrically connected in series to a 50 Hz AC power source.

The processing steps are numerous as shown below. After the IC is placed on the board and automatically transported, the heating member comes down and
At the same time, the lead wire of C is pressed with a pressure of about 2 kg/cm2, and at the same time, a current of about 50 OA is supplied to the heating member to heat it to about 300''C.

After the solder is melted and the lead wires and the circuit on the board are connected,
When the electricity is turned off and the solder hardens, the heating member is raised and this process is completed.

Below, an example will be described in which a heating member of the present invention was manufactured by forming the above-mentioned insulating region on the surface of a base material made of a tetraelectric substance and coating it with a film to which solder does not easily adhere.

Example 1 In this example, a high resistivity portion was formed on the surface of the base material using an ion implantation apparatus as shown in FIG. First, the raw material solid 14 was placed in an open 15 tube, and an anti-oxidant gas was introduced. Next, the filament 17 was heated by passing an electric current through it, and the solid elements of the raw material were ionized by being knocked out by the reaction gas. The ejected ions are focus 1
8, and further accelerated by force U collocation 19.

Next, a magnetic field is applied by the magnet 20 so that only desired ions out of the ejected ions are extracted from the slit 21, and then a Y-scanner 22. A stain field was applied to the X-scanner 23.

Ions were injected into the conductive base material 13 by irradiating the conductive base material 13 with ions that had become highly energetic due to the magnetic field and the t-field.

Ions implanted by this ion implantation method include nitrogen, carbon, oxygen, phosphorus, and boron.

Examples include indium, yttrium, silicon, and kermanium.

Example 2 In this example, a film containing the components shown in Table 1 was coated on the surface of an insulating region by plasma CVD. FIG. 4 is a schematic diagram of a parallel plate type capacitively coupled plasma (VD device).In the vacuum chamber 26, a flat plate method ground electrode 27 and a high frequency electrode 28 are installed facing each other. 26 is provided with a gas inlet 32.A heater 29 is attached to the ground electrode 27, and the high frequency power 28 is connected to the high frequency electrode 3 via a matching box 30.
Connected to 1.

Using this device, the surface of the insulating region of the conductive heating member was first coated with a film to which solder was difficult to adhere. Heating member 13
was placed on the ground electrode 27, and the inside of the chamber 26 was evacuated to about 10' Torr using a vacuum bonder (not shown). Next, a heater 29 with a hole attached to the ground electrode 27
The heating member 13 is heated from 150'O to about 450°C, and TiCl4. N! , C.H.
, etc. were supplied into the chamber 26, and the chamber 26 was evacuated so as to maintain the degree of vacuum within the chamber 26 at 0.05 to 1.0 Torr. When power is applied to the high frequency electrode 28,
Glow discharge occurs between the electrodes, the raw material gas becomes a glazoma, and the thin film is coated on the heating member 13. The raw material gas and its flow rate, the reaction pressure in the chamber 26, and the electric power applied to the high-frequency electrode 28. , film forming time, and film thickness are as shown in Table 1. For example, when coating a film of TiN component, the source gas is TiC1420SCCM, N
l 300SCCM, H.

200 SCCM was introduced to the gas population of 32, and chaff
The reaction pressure in the bar 25 was maintained at 1.0 Torr, and a voltage of 500 W was applied to the high frequency electrode 28 to form a film. In this case, a film with a thickness of 1.0 μm was formed in 30 minutes. Table 1 below shows the components of the film formed in the same way for films of other components, the raw material gas and its flow rate, the reaction pressure in the chigin bar, the power applied to the frequency electrode 28, the film formation time, and the film thickness. As shown.

According to the blank plasma CVD method, since the heating member can be treated at a relatively low temperature of 150°C to 450°C, a good coating with strong adhesion strength can be obtained without impairing the properties of the heating member.

Example 3 In this example, a film containing the components shown in Table 2 was formed by sputtering. The sputtering equipment used is the fifth
As shown in the figure. Inside the vacuum chamber 26, a flat ground electrode 27 and a high frequency electrode 28 are installed facing each other, and a heater 29 is attached to the flat ground electrode 27.

The high frequency electrode 28 is connected to the high frequency electrode 11 via a matching box 30. A gas inlet 32 is provided in the side wall of the vacuum chamber/par 26. In this way, the sputtering method is similar to the above-mentioned Gubudsma CVD equipment, but the solid material is transferred to the high frequency electrode 28 as the target 2.
The only difference is that it is provided as 4.

Using this equipment, a film was formed on the surface of the υ insulating region to which solder was difficult to adhere. Table 2 lists the components, raw materials, film forming conditions, etc. of the film formed. For example, Ti
To form a film made of N component, gold is set as the target 24, and the gas inlet 32 is opened (1).
Arga, 1.1105CC.

50 SCCM of nitrogen gas was applied to the high frequency electrode 28 while keeping the pressure inside the chamber 26 at I x 10-3 Torr.
Film formation was performed with a voltage of OW. In this case, a TiN film having a thickness of 3.0 μm was formed in a film forming time of 60 minutes. Below, we will discuss the target solid, raw material gas, and its transition in the same way for coatings of other components.

The reaction pressure in the chamber 26, the power applied to the high frequency pole 28, the film forming time, and the film thickness of the film are listed in Table 2.

The blank space sputtering method is easy to handle because a solid material can be used as a raw material, and there is no need to change the shape of the heating member or the shape of the device, so it can be said to be a versatile method.

Example 4 In this example, a film to which solder is difficult to adhere was formed on the surface of an insulating region by EC-glazma CVD. The apparatus used in this method is the one shown in FIG. A gas inlet 32 is provided in the side wall of the film forming chamber 35 .

In addition, a plasma forming chamber 36 is provided in the upper blade of the film forming chamber 35.
The film forming chamber 36 is in communication with the film forming chamber 36 through a glazma inlet 38 provided in a partition plate 37 . A quartz plate 39 is disposed on the earthen wall of the plasma formation chamber 36, and a microwave four-wave tube 40 is disposed above the quartz plate 39. Further, a gas inlet 41 is provided in the earthen wall of the plasma formation chamber 36, and a magnet 42 is provided around the plasma formation chamber 36.

In order to coat the heating member with a film using this apparatus, the heating member 13 was installed at the bottom of the film forming chamber 35, and the film was formed as follows. The inside of the film forming chamber 35 is evacuated by a vacuum bonder, and 1
The degree of vacuum was maintained at 1.times.10@-3 to 1.times.10@-3. A source gas is introduced into the film forming chamber 35 through the introduction pipe 32, and a reaction gas (N2.02, CH4, etc.) is supplied from the inlet pipe 41 to the plasma formation chamber, or a gas X that supplies energy to others without reacting itself;
(ArHe, Hz) were introduced, respectively. When a 2.45 Hz microwave is introduced into the plasma formation chamber 36 from the microwave waveguide 0, an electric field E is generated by the microwave. Furthermore, a current is applied to the electromagnet 42 to form a magnetic field of 875 Gauss within the plasma formation chamber 36. Electrons within the plasma formation chamber 16 resonate and are excited. When the electrons are introduced from the introduction tube 41 due to resonance, their energy is supplied to the N2 or Ar gas, forming a plasma of these gases. This plasma is drawn out to the film forming chamber 35 through the plasma outlet tube 38 as the magnetic field is completely destroyed.

The components of the source gas introduced into the film forming chamber 35 through the introduction pipe 32 were deposited on the surface of the flat heating member 130 inside the film forming chamber 35 .

The raw material gas, film forming conditions, etc. for each film are listed in Table 3. For example, when forming a film of T1CN component, T i Cl 4 10 S CCM is introduced from the gas inlet 32 as a raw material, and CH420SCC is introduced as a reaction gas.
M, Nl50S CCM, and H2200SCCM were introduced through the gas inlet 32. The pressure inside the film forming chamber 35 is 3
Keep the microwave power at X10 Torr to 100OW
And so. In this case, a film with a thickness of 3.0 μm was obtained in 60 minutes. Hereinafter, for coatings of other components, the raw material gas and its flow rate, reaction pressure in the film forming chamber 35, microwave power, film forming time, and film thickness are similarly listed in Table 3.

As described above, according to the ECRz'9Zuma CVD method, the process can be performed without heating the heating member, and a film having uniform components and closely attached to the member can be formed.

If the Ar ion bombardment process is performed before the film formation shown in Examples 2 to 4 above in row 5, the degree of adhesion between the film and the insulating region can be increased. To perform this treatment, in the case of the plasma CVD method and the ECR glasma CVD method, it is sufficient to flow Ar to form plasma without supplying the raw material gas for the film, and in the case of the sputtering method, the plasma is formed by flowing Ar instead of the target. All you have to do is apply electric power to the material.

In this way, by forming an insulating region on the surface of the base material made of 4% carbonaceous material, there is no shunting of current from the heating member to the circuit of the board, and a good power flow can be applied. . Furthermore, by coating the surface of this insulating forehead area with a film, it is possible to provide a heating member that is difficult to adhere to with solder, has excellent wear resistance and oxidation resistance, and can withstand tens of thousands of uses. I can do it.

〔effect〕

As described in detail above, the electrical heating member of the present invention coated with a film having a contact angle of at least 10 degrees with the molten metal of at least one of lead and tin has a good quality property in which solder is difficult to adhere to the heating member. Special processing is applied.

[Brief explanation of the drawing]

1 to 6 all relate to embodiments of the present invention, FIG. 1 is a perspective view of one heating member, and FIG. 2 is a perspective view of one heating member.
A schematic diagram showing how several heating members are connected in series, Figure 3 is a schematic diagram of an ion implanter, and Figure 4 is a plasma CV
FIG. 5 is a schematic diagram of an apparatus used in the D method, FIG. 5 is a schematic diagram of an apparatus used in the sputtering method, and FIG. 6 is a schematic diagram of an apparatus used in the ECR plasma CVD method. 13... Heating member agent Patent attorney Nori Ken Chika Yudo Yamashita - Figure 2 Figure 3 Figure 4 Figure 5 Microphone 1 Peeling Chrysanthemum Eki Figure 6

Claims (1)

[Claims] In a member that processes a workpiece by heating it by applying electricity to a base material made of a conductive substance, at least the portion of the base material that contacts the workpiece forms a region with a specific resistance of 100 times or more that of the base material. Further, the surface of the insulating region is further coated with a film having a contact angle with a molten metal containing at least one of lead or tin as a main component of 10 degrees or more.