JPH01272306A - Starting circuit for current source circuit - Google Patents

Starting circuit for current source circuit

Info

Publication number
JPH01272306A
JPH01272306A JP63102305A JP10230588A JPH01272306A JP H01272306 A JPH01272306 A JP H01272306A JP 63102305 A JP63102305 A JP 63102305A JP 10230588 A JP10230588 A JP 10230588A JP H01272306 A JPH01272306 A JP H01272306A
Authority
JP
Japan
Prior art keywords
circuit
current
dod
trs
constituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63102305A
Other languages
Japanese (ja)
Other versions
JP2687419B2 (en
Inventor
Masaaki Ishihara
石原 政明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP63102305A priority Critical patent/JP2687419B2/en
Publication of JPH01272306A publication Critical patent/JPH01272306A/en
Application granted granted Critical
Publication of JP2687419B2 publication Critical patent/JP2687419B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Amplifiers (AREA)

Abstract

PURPOSE:To attain stable driving at a low voltage by providing the title circuit with 1st and 2nd circuits constituted under a prescribed condition and a diode characteristic element and fixing the saturated current value of the circuit on a prescribed value. CONSTITUTION:The circuit is constituted of the 1st circuit having the serial connection of diodes (Dod) 2, 3 or current voltage characteristic equivalent to the serial connection, the 2nd circuit consisting of a current mirror constituted of transistors(TR) 11-14 and the Dod characteristic element 5. Immediately after applying power supply voltage in said constitution, the collector current of the TRs 11-14 is zero. When saturated current values of the Dod 5 and between the bases and emitters of the TRs 11, 12 are set up to values equal or larger to/than that of the Dod 2, 3, current flowing into a resistor 1 is branched into the the circuit constituted of the serial circuits consisting of the Dod 2, 3, the Dod 5, the TRs 11, 12, and resistors 4, 15. Thereby, the collector current of respective TRs is started to flow, increased and stabilized at an operation point of the current source circuit constituted of the TRs 11-14 and the resistors 4, 15-17.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、特に低電圧で1駆動される電流源回路用起動
回路に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention particularly relates to a starting circuit for a current source circuit driven at a low voltage.

〔発明の概要〕[Summary of the invention]

本発明は電流源回路用起動回路に関し、回路の飽和電流
値を定めることによって、より低電圧での駆動が行える
ようにし九ものである。
The present invention relates to a starting circuit for a current source circuit, and is capable of driving at a lower voltage by determining the saturation current value of the circuit.

〔従来の技術〕[Conventional technology]

例えばモノリシクークICに用いられる電流源回路には
第4図に示すようなものがある。すなわち図において、
NPN )ランジスタαカ(2)からなる第1のカレン
トミラーとPNPトランジスタ(ハ)α→からなる第2
のカレントミラー乙が組合され、第1の電源vccと第
2の電[GNDの間に設けられると共に、トランジスタ
(6)のエミッタサイズがトランジスタ(11)の2倍
以上とされ、トランジスタ(6)に所定のエミッタ抵抗
(ハ)が設けられ、トランジスタ(2)α◆に互いに等
しいエミッタ抵抗α*(1カが設けられる。
For example, there is a current source circuit used in a monolithic IC as shown in FIG. That is, in the figure,
A first current mirror consisting of NPN) transistor α(2) and a second current mirror consisting of PNP transistor (c) α→
A current mirror B is combined and provided between the first power supply VCC and the second power supply [GND, and the emitter size of the transistor (6) is made to be more than twice that of the transistor (11), and the transistor (6) A predetermined emitter resistance (c) is provided at transistor (2), and a mutually equal emitter resistance α* (1) is provided at transistor (2) α◆.

これによってこの電流源回路が駆動されると、この回路
に の電流が流され、第1または第2のカレントミラーにさ
らにトランジスタを接続することによってこの電流を取
出すことができる。
When this current source circuit is driven by this, a current is caused to flow through this circuit, and this current can be taken out by further connecting a transistor to the first or second current mirror.

ところがこの回路において、回路の動作安定点は、上述
の希望電流が流れている状態の他に、電流0の状態があ
り得る。この友め電源投入時等に電流0の安定点が維持
されて、希望の電流が得られないおそれがあった。
However, in this circuit, the stable operating point of the circuit may be a state where the current is 0, in addition to the state where the desired current is flowing as described above. When the power source is turned on, a stable point of zero current is maintained, and there is a possibility that the desired current cannot be obtained.

そこで従来は図中に示すように、例えば第1の電源VC
Cとカレントミラーの接続中点■との間に100 kΩ
オーダーの高抵抗(100) t−接続し、電源投入時
等にこの高抵抗(100) t−通じて少量の電流を供
給して、希望電流が流されるように起動することが行わ
れている。
Therefore, conventionally, as shown in the figure, for example, the first power supply VC
100 kΩ between C and the connection midpoint of the current mirror ■
A small amount of current is supplied through this high resistance (100) t when the power is turned on, etc., so that the desired current flows. .

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

ところが上述の高抵抗(100) ′t−設けた場合に
、1)電流源回路の動作中に電源Vccから高抵抗(1
00)’を通じて[リッグル電流が流れ込み、[流源出
力のリップルに対する安定度が悪化する。
However, when the above-mentioned high resistance (100)'t- is provided, 1) the high resistance (100) is connected to the power supply Vcc during operation of the current source circuit;
00)', a ripple current flows in, and the stability of the current source output against ripples deteriorates.

2)通常100にΩオーダーの抵抗が必要な九め、IC
チップ内でこの高抵抗(Zoo)の占有する面積が極め
て大きくなる。また省面積化のためにトンネル抵抗やF
ET f:用いることも考えられるが、これらの半導体
抵抗は製造五のばらつきが犬きく、結果的にリップルに
対する安定度のばらつきを大きくしてしまう。
2) Ninth IC, which usually requires a resistance on the order of 100Ω
The area occupied by this high resistance (Zoo) within the chip becomes extremely large. In addition, to save area, tunnel resistance and F
Although it is possible to use ETf, these semiconductor resistors have large manufacturing variations, resulting in large variations in stability against ripples.

などの問題点があった。There were problems such as.

これに対して、ダイオード等を用いて、起動後は回路が
遮断されるようにした起動回路が提案されている。
In response to this, a startup circuit has been proposed that uses a diode or the like to shut off the circuit after startup.

(Gray + M@yor著”Analysts a
nd Design ofAnalog Int@gr
at@d C1rcults” 1977 t Joh
nWlley & 5ons発行−P 、244等参照
)しかしながらこの回路の場合には、起動回路として多
数のダイオードを直列接続した回路が用いられるために
、電源vccとして少くともこのダイオードの頭方向電
圧の総計を越える電圧が必要となり、低電圧駆動の回路
には不適当であった。
(Gray + M@yor “Analysts a
nd Design of Analog Int@gr
at@d C1rcults” 1977 t Joh
However, in the case of this circuit, since a circuit in which a large number of diodes are connected in series is used as a starting circuit, at least the sum of the head direction voltages of these diodes is used as the power supply vcc. This required a voltage exceeding 100%, making it unsuitable for low-voltage drive circuits.

この出願はこのような点に鑑みてなされ九ものである。This application was filed in view of these points.

〔課題全解決する九めの手段〕[Ninth means to solve all problems]

本発明は、第1の電源Vccから第1のノード■に電流
全供給する抵抗(1)と、上記第1のノードから第2の
電源GNDに接続されるダイオード2個(2)(3)の
直列接続もしくはそれと同等の電流−電圧特性を持つ第
1の回路と、 NPNカレントミラーα1)(6)とP
NPカレントミラーα3(14の組合せによシ構成され
る電流源回路の一方の電流通路■に直列に抵抗(4)全
挿入し九第2の回路と、上記第1のノードと上記一方の
電流通路の間に接続するダイオード特性素子(5)から
なり、上記第1の回路の飽和電流値を上記第2の回路及
び上記ダイオード特性素子の飽和電流値と同等もしくは
より小さくしたことを特徴とする電流源回路用起動回路
である。
The present invention includes a resistor (1) that supplies the entire current from the first power supply Vcc to the first node (2), and two diodes (2) (3) connected from the first node to the second power supply GND. A first circuit with series connection or equivalent current-voltage characteristics, NPN current mirror α1) (6) and P
A resistor (4) is fully inserted in series with one current path (■) of a current source circuit consisting of a combination of NP current mirrors α3 (14), and the current between the second circuit, the first node, and one of the above It consists of a diode characteristic element (5) connected between the passages, and is characterized in that the saturation current value of the first circuit is equal to or smaller than the saturation current value of the second circuit and the diode characteristic element. This is a starting circuit for a current source circuit.

〔作用〕[Effect]

これによれば、高抵抗を用いる必要がないのでICチッ
プ内で大面積を占有されるおそれがないと共に、回路の
飽和電流値を定めることによってより低電圧で安定々駆
動全行うことができる。
According to this, there is no need to use a high resistance, so there is no risk of occupying a large area within the IC chip, and by determining the saturation current value of the circuit, it is possible to stably drive the circuit at a lower voltage.

〔実施例〕〔Example〕

第1図において、電源VCCが抵抗(1) ′!!−介
してノード■に接続され、このノード■がダイオード(
2)(3)の直列接続を介して電源GNDに接続される
。まtトランジスタα■〜α→からなる電流源回路の一
方の電流通路■に抵抗(4)が挿入され、上述のノード
■と電流通路■との間にダイオード(5)が設けられる
In Figure 1, the power supply VCC is resistor (1)'! ! − is connected to the node ■ through the diode (
2) Connected to the power supply GND via the series connection of (3). A resistor (4) is inserted into one current path (2) of a current source circuit consisting of transistors α2 to α→, and a diode (5) is provided between the above-mentioned node (2) and the current path (2).

従ってこの回路において抵抗(1) (4)、ダイオー
ド(21(3) (5)が起動回路である。
Therefore, in this circuit, resistors (1) (4) and diodes (21 (3) (5)) are the starting circuit.

そしてこの回路において電源電圧が印加された直後は、
各トランジスタα■〜α4のコレクタ電流はOである。
Immediately after the power supply voltage is applied in this circuit,
The collector current of each transistor α■ to α4 is O.

このとき、ダイオード(5)、トランジスタα■(2)
のベース−エミッタ間の特性の飽和電流値全ダイオード
(2) (3)の飽和電流値と同等もしくはより大きく
すれば、抵抗(1)ヲ通る電流は、ダイオード(2) 
(3)の直列回路およびダイオード(5)抵抗(4)ト
ランジスタ0Dベース−エミッタ接合ならびにトランジ
スタ0のペース−エミッタ接合と抵抗(ト)から構成さ
れる回路に分流する。
At this time, diode (5), transistor α (2)
If the saturation current value of the base-emitter characteristics of the total diode (2) (3) is made equal to or larger than the saturation current value of the base-emitter characteristic, the current passing through the resistor (1) will be the same as the saturation current value of the diode (2) (3).
The current is shunted into a circuit consisting of a series circuit of (3) and a diode (5) a resistor (4) a transistor 0D base-emitter junction and a base-emitter junction of transistor 0 and a resistor (T).

このため各トランジスタのコレクタ電流が流れはじめ、
増大し、トランジスタ◇璋〜α4抵抗に)〜αカ(4)
により構成される電流源回路の動作点で安定する。回路
の動作点が安定し友後は、抵抗(4)にトランジスタα
→のエミッタ電流■□、とトランジスタ(6)のベース
電流I、2の和の電流が流れる。
For this reason, the collector current of each transistor begins to flow,
Increasing the transistor ◇ ~ α4 resistance) ~ α power (4)
It is stabilized at the operating point of the current source circuit configured by . After the operating point of the circuit is stabilized, transistor α is added to resistor (4).
A current equal to the sum of the emitter current ■□ of → and the base current I, 2 of the transistor (6) flows.

ここでダイオード+2) (3)の直列回路に印加する
電圧と電流の特性i C1、ダイオード(5)抵抗(4
)トラン、ゾスタ01)(6)(コレクタをオープンと
する)、抵抗0つにより構成される回路(第2図参照)
に印加する電圧と電流の特性ヲ02として図示すると第
3図のようになる。
Here, diode +2) Characteristics of voltage and current applied to the series circuit of (3) i C1, diode (5) resistance (4
) Transistor, Zostar 01) (6) (collector open), circuit consisting of 0 resistors (see Figure 2)
The characteristics of the voltage and current applied to the circuit are shown in FIG. 3 as 02.

従ってこの図において、C1の電流が立ち上がり、かつ
C2の電流が立ち上がらない領域に動作点を設定するこ
とが可能である。具体例として抵抗(4)4.5にΩ、
抵抗aつ360Ω、抵抗α→−抵抗(Lη 、トランジ
スタ(6)のエミッタサイズを4倍とし、スヘてのダイ
オードとNPN )ランジスタの飽和電流ヲ等シイトス
ると、トランジスタ(11)のエミッタ電流は約100
μAとなシ、抵抗(4)の電位降下は約450mVとな
る。これによってダイオード(5)には順方向立ち上が
り電圧より約450mV低い電圧が加わる。このときダ
イオード(5)に流れる電流はダイオード(2)の電実
際上無視できる値となる。
Therefore, in this diagram, it is possible to set the operating point in a region where the current of C1 rises and the current of C2 does not rise. As a specific example, resistance (4) is 4.5Ω,
Assuming that the resistor a is 360 Ω, the resistor α → -resistance (Lη), the emitter size of the transistor (6) is quadrupled, and the saturation current of the transistor (NPN and diode) is equal, the emitter current of the transistor (11) is Approximately 100
With μA, the potential drop across the resistor (4) is approximately 450 mV. As a result, a voltage approximately 450 mV lower than the forward rising voltage is applied to the diode (5). At this time, the current flowing through the diode (5) becomes a value that can be ignored in terms of the current flowing through the diode (2).

すなわち上述し几ような動作点金説定することにより、
回路の起動が完了した後はVccからダイオード(5)
を通って電源リップルが混入することがなくなり、安定
度を極めて向上させることができる。
In other words, by assuming the operating point as described above,
After the circuit has started up, connect the diode (5) from Vcc.
This eliminates the possibility of power supply ripples entering the circuit, greatly improving stability.

こうして上述の回路によれば、高抵抗を用いる必要がな
いので■Cチップ内で大面積全占有されるおそれがない
と共に、回路の飽和電流値を定めることによってより低
電圧で安定な駆動に行うことができる。
In this way, according to the above-mentioned circuit, there is no need to use a high resistance, so there is no need to use a large area in the C chip, and by determining the saturation current value of the circuit, stable driving can be achieved at a lower voltage. be able to.

なお上述の回路でダイオード(2) (3)の直列回路
は同等の電流−電圧特性を持つものであれば別の構成で
もよい。
In the above circuit, the series circuit of diodes (2) and (3) may have a different configuration as long as it has the same current-voltage characteristics.

またトランジスタα]負4抵抗α・α力によるカレント
ミラーも同等の特性を持つものであれば他の構成でもよ
い。
Further, the current mirror formed by the transistor [alpha] and the negative four resistors [alpha] and [alpha] may also have other configurations as long as they have the same characteristics.

さらにダイオード(5)もダイオード特性を有するもの
であnは他の素子でもよく、特に飽和電流値を大きくす
るためにはトランジスタのエミッタサイズを大きくした
素子をダイオード接続して用いることもできる。
Further, the diode (5) also has diode characteristics, and n may be another element. In particular, in order to increase the saturation current value, a diode-connected element with a transistor with a larger emitter size may be used.

また上述の回路において相補的な回路構成を用いても同
様の動作が実現できることも明らかであるO 〔発明の効果〕 この発明によれば、高抵抗を用いる必要がないのでIC
チッグ内で大面積を占有さnるおそれがないと共に、回
路の飽和電流値を定めることによってより低電圧で安定
な駆動を行うことができるようになった。
It is also clear that the same operation can be realized even if a complementary circuit configuration is used in the above-mentioned circuit.
There is no risk of occupying a large area within the circuit, and by determining the saturation current value of the circuit, stable driving can be performed at a lower voltage.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一例の構成図、第2図、第3図はその
説明の九めの図、第4図は従来の技術の説明の九めの図
である。 (1) (4)(ロ)〜αカは抵抗、(2) (3) 
(51はダイオード、(1])〜α4はトランジスタ、
vcc S GNDは電源である。
FIG. 1 is a block diagram of an example of the present invention, FIGS. 2 and 3 are the ninth diagrams for explaining the same, and FIG. 4 is the ninth diagram for explaining the conventional technique. (1) (4) (b) - α is resistance, (2) (3)
(51 is a diode, (1]) ~ α4 is a transistor,
vccS GND is a power supply.

Claims (1)

【特許請求の範囲】 第1の電源から第1のノードに電流を供給する抵抗と、 上記第1のノードから第2の電源に接続されるダイオー
ド2個の直列接続もしくはそれと同等の電流−電圧特性
を持つ第1の回路と、 NPNカレントミラーとPNPカレントミラーの組合せ
により構成される電流源回路の一方の電流通路に直列に
抵抗を挿入した第2の回路と、 上記第1のノードと上記一方の電流通路の間に接続する
ダイオード特性素子からなり、 上記第1の回路の飽和電流値を上記第2の回路及び上記
ダイオード特性素子の飽和電流値と同等もしくはより小
さくしたことを特徴とする電流源回路用起動回路。
[Claims] A resistor that supplies current from a first power source to a first node, and two diodes connected in series from the first node to a second power source, or a current-voltage equivalent thereto. a first circuit having a characteristic, a second circuit in which a resistor is inserted in series in one current path of a current source circuit configured by a combination of an NPN current mirror and a PNP current mirror, and the first node and the above. It consists of a diode characteristic element connected between one current path, and is characterized in that the saturation current value of the first circuit is equal to or smaller than the saturation current value of the second circuit and the diode characteristic element. Starting circuit for current source circuit.
JP63102305A 1988-04-25 1988-04-25 Starting circuit for current source circuit Expired - Fee Related JP2687419B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63102305A JP2687419B2 (en) 1988-04-25 1988-04-25 Starting circuit for current source circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63102305A JP2687419B2 (en) 1988-04-25 1988-04-25 Starting circuit for current source circuit

Publications (2)

Publication Number Publication Date
JPH01272306A true JPH01272306A (en) 1989-10-31
JP2687419B2 JP2687419B2 (en) 1997-12-08

Family

ID=14323895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63102305A Expired - Fee Related JP2687419B2 (en) 1988-04-25 1988-04-25 Starting circuit for current source circuit

Country Status (1)

Country Link
JP (1) JP2687419B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311984A (en) * 2007-06-15 2008-12-25 Nec Electronics Corp Bias circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955518A (en) * 1982-09-24 1984-03-30 Mitsubishi Electric Corp Constant current circuit
JPS62154519U (en) * 1986-03-19 1987-10-01

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5955518A (en) * 1982-09-24 1984-03-30 Mitsubishi Electric Corp Constant current circuit
JPS62154519U (en) * 1986-03-19 1987-10-01

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311984A (en) * 2007-06-15 2008-12-25 Nec Electronics Corp Bias circuit

Also Published As

Publication number Publication date
JP2687419B2 (en) 1997-12-08

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