JPH01268125A - Elimination of resist film on periphery of semiconductor wafer - Google Patents
Elimination of resist film on periphery of semiconductor waferInfo
- Publication number
- JPH01268125A JPH01268125A JP9757988A JP9757988A JPH01268125A JP H01268125 A JPH01268125 A JP H01268125A JP 9757988 A JP9757988 A JP 9757988A JP 9757988 A JP9757988 A JP 9757988A JP H01268125 A JPH01268125 A JP H01268125A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- resist film
- developer
- periphery
- positive resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 230000008030 elimination Effects 0.000 title 1
- 238000003379 elimination reaction Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 25
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 239000000428 dust Substances 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 3
- 230000008961 swelling Effects 0.000 abstract description 2
- 230000000630 rising effect Effects 0.000 abstract 1
- 241000257465 Echinoidea Species 0.000 description 7
- 206010011732 Cyst Diseases 0.000 description 4
- 208000031513 cyst Diseases 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置の製造方法に関し、特に半導体ウェ
ハの周縁部からレジスト膜を除去する方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method of manufacturing a semiconductor device, and particularly to a method of removing a resist film from the peripheral edge of a semiconductor wafer.
半導体装置の製造工程のうちウェハプロセスにおいては
塵埃の発生を抑えることが歩留夛向上のために重要であ
る。特に写真製版工程に使用されるレジストは、半導体
ウェハを搬送あるいは移載させる際に半導体ウェハの周
縁部から剥離しやすく、この剥離したレジスト膜が塵埃
になるという不具合があった。従来、このような不具合
を解消するために、半導体ウェハの周縁部に形成された
レジスト膜を予め除去するという方法を採っていた。In the wafer process of semiconductor device manufacturing processes, it is important to suppress the generation of dust in order to improve yield. In particular, the resist used in the photolithography process tends to peel off from the peripheral edge of the semiconductor wafer when the semiconductor wafer is transported or transferred, and the peeled resist film becomes dust. Conventionally, in order to eliminate such problems, a method has been adopted in which the resist film formed on the peripheral edge of the semiconductor wafer is removed in advance.
これを図によって説明すると、第３図および第４図は従
来のレジスト膜除去方法を示すフローチャートで、第３
図は後述するエツジリンス法を示し、第４図は周辺露光
法を示す。第３図に示すエツジリンス法は、レジスト塗
布後接半導体ウェハの周縁部のみに有機溶剤を滴下し、
レジストを溶解させ除去する方法で、これを詳述すると
、第５図に示すように１ポジ型レジスト１がスピンコー
ド法によシ塗布された半導体ウェハ２を８０Ｏｒｐｍで
低速回転させ、この半導体ウェハ２の周縁部に酢酸ブチ
ルからなるリンス液３を専用ノズル４を使用して約５秒
滴下させることによって、半導体ウェハ２の周縁部に形
成されたレジストが除去されることになる。また、第４
図に示す周辺露光法は、ポジ型レジストを塗布した後に
ステッパー等によシ所望のパターンを半導体ウェハに露
光させＡ後、半導体ウェハ周縁部のみを専用の露光装置
で霧光させ、現像時にパターン面と同様に除去する方法
で、第６図に示すように、ポジ型レジスト１が塗布され
た半導体ウニ・・２を、半導体ウニ・・２のパターン部
（図示ぜず）を遮光するＣｒ膜５が形成されたマスク６
を使用ｊ５．プロジェクションアライナ−（図示せず）
により全面霧光させることにより、との際に露光された
周縁部のレジストが現像液によって除去されることにな
る。なお第６図中７は無薯用の光を示す。To explain this using diagrams, FIGS. 3 and 4 are flowcharts showing a conventional resist film removal method.
The figure shows an edge rinsing method, which will be described later, and FIG. 4 shows a peripheral exposure method. The edge rinsing method shown in FIG.
This is a method of dissolving and removing the resist. To explain this in detail, as shown in FIG. The resist formed on the peripheral edge of the semiconductor wafer 2 is removed by dropping a rinsing liquid 3 made of butyl acetate onto the peripheral edge of the semiconductor wafer 2 using a dedicated nozzle 4 for about 5 seconds. Also, the fourth
In the peripheral exposure method shown in the figure, after coating a positive resist, the semiconductor wafer is exposed to a desired pattern using a stepper or the like. After A, only the peripheral area of the semiconductor wafer is exposed to fog light using a dedicated exposure device, and the pattern is patterned during development. As shown in FIG. 6, the semiconductor sea urchin . Mask 6 on which 5 is formed
Use j5. Projection aligner (not shown)
By causing the entire surface to be fogged, the resist at the periphery exposed at the time of is removed by the developer. In addition, 7 in FIG. 6 shows the light for yam-free use.
しかるに、従来のこの挿し・シスト膜除去方法において
は、エツジリンス法によって有機溶剤を使用し−で半導
体ウニ・・の周縁部のし・シスト膜を溶解させ除去する
と、第７図に示すように、除去されないポジ型しジス１
−１が有機溶剤によって膨潤され、周縁部が盛りあがる
。との盛りあがり部分は、ボストベ−り時にクラックが
発生しゃ一ノー＜、後１１程で剥削されやすいので、塵
埃が発生しやすい。However, in this conventional method for removing the cyst film, when the cyst film on the peripheral edge of the semiconductor sea urchin is dissolved and removed using an organic solvent by the edge rinsing method, as shown in Fig. 7, Positive mold that is not removed 1
-1 is swollen by the organic solvent, and the peripheral portion is raised. The raised portions are likely to cause cracks during boss baking, and are likely to be scraped off after about 11 hours, so dust is likely to be generated.
−また、周辺節米法によつでレジスト膜を除去するには
専用の露光装置、−マスク等が必要で、ｊ−力・も霧光
工程が増えるに−めコア：、１・が高くなるという問題
があった。- Also, in order to remove the resist film using the periphery-saving method, a special exposure device, mask, etc. are required, and since the fogging process increases, the core:, 1, is high. There was a problem.
本発明に係る≧１１導体ウコーハ周縁部のｌ／シスト除
去力法−［、ポジ型しジス１膜が形成された半導体ウェ
ハを回転させると共に、周縁部にパターン現像用現像液
より高濃度の）′四カリ性現像醗全滴下するものである
。≧11 conductor periphery l/cyst removal force method according to the present invention - [A positive type semiconductor wafer on which a film is formed is rotated, and a developer solution with a higher concentration than that for pattern development is applied to the periphery) 'Add all the tetrapotassic developing solution.
パターン現像用現像液より高濃度のアルカ！Ｊ ＋′：
Ｉ＋現像液が半導体ウゴハの周縁部のみに滴下はれるコ
トになり、この現像液によってポジ型レジスト膜が溶解
され除去される。Alka has a higher concentration than the developer for pattern development! J+′:
The I+ developer is dripped only onto the peripheral edge of the semiconductor substrate, and the positive resist film is dissolved and removed by this developer.
以下、本発明を図に示す実施例により詳細に説明する。 Hereinafter, the present invention will be explained in detail with reference to embodiments shown in the drawings.
第１図は本発明に係るｌ／シスト膜除去方法を示すフロ
ーチャート、第２図は本発明を東施するための装置を示
す余１視図で、これらの図においで、１１はポジ型レジ
スト１２が塗布された半導体ウニ・・、１３はパターン
部現像用現像液１４を半導体ウェハ１１に塗布するため
の現像液ノズルである。前記パターン現像用現像液１４
け濃度が２３８チの水酸化テトラメチルアンモニウム水
溶液（ＮＭｒ）−３）からなり、ポジ型レジスト１２の
露光部を溶解除去する性質を備えている。１５け半導体
ウェハ１１の周縁部からポジ型レジスト１２を溶解させ
除去するための高濃度アルカリ性現像液で、前記パター
ン部現像用現像液１４より高濃度の５チ水酸化テトラメ
チルアンモニウム水溶液カらなり、半導体ウニ・・１１
の周縁部と対向し２て配設された専用ノズル１６から滴
下される。なお１７は半導体ウニ・・１１を回転させる
ためのスピンチャックである。FIG. 1 is a flowchart showing the l/cyst film removal method according to the present invention, and FIG. 2 is a perspective view showing an apparatus for applying the present invention. In these figures, 11 indicates a positive resist film. The semiconductor wafer 12 is coated, and the numeral 13 is a developer nozzle for applying a developer 14 for developing the pattern portion to the semiconductor wafer 11. The developer for developing the pattern 14
It is made of an aqueous solution of tetramethylammonium hydroxide (NMr)-3) with a concentration of 238 cm, and has the property of dissolving and removing the exposed areas of the positive resist 12. A highly concentrated alkaline developer for dissolving and removing the positive resist 12 from the peripheral edge of the semiconductor wafer 11, consisting of an aqueous solution of 5-tetramethylammonium hydroxide, which has a higher concentration than the developer 14 for developing the pattern area. , semiconductor sea urchin...11
The liquid is dripped from a dedicated nozzle 16 disposed opposite to the peripheral edge of. Note that 17 is a spin chuck for rotating the semiconductor sea urchin 11.
次に半導体ウニ・・１１の周縁部からレジスト膜を除去
する方法について説明する。先ず、半導体ウェハ１１土
にスピンコード法によって１２μｍの膜厚を有するポジ
型レジスト１２の膜を形成する。次いで、と、の半導体
ウニ・・１１を露光させ、所望のパターン全焼伺ける。Next, a method for removing the resist film from the periphery of the semiconductor urchin 11 will be described. First, a film of positive resist 12 having a thickness of 12 μm is formed on a semiconductor wafer 11 by a spin code method. Next, the semiconductor urchins 11 and 11 are exposed to light to completely burn out the desired pattern.
この際、半導体ウニ・・Ｊｌの周縁部は裾光されない。At this time, the periphery of the semiconductor sea urchin...Jl is not illuminated.
しかる後、スピンチャック］フ上に半導体ウェハ１１を
装着させ、との斗導体つェハＪ１上にパターン部現像用
現像液１４を滴下し、約５０秒パドル現像させる。そし
て、純水で２０秒リンス１〜た後、半導体ウェハ１１を
５００ｒｐｍで回転させ、専用ノズル１６から高濃度ア
ルカリ性現像液１５を２分間滴下させ続ける。一般にポ
ジ型レジストの未震光部分は、前記パターン部現像用現
像液１４のような濃度の低いアルカリ性現像液に対し７
ては難溶性を示ずが、現像液の濃度を＋げるととによっ
て溶解度を一トげることができる。このため、半導体ウ
ェハ１１の周縁部からポジ型しジス）・１２が溶解され
除去されることになる。１−かる後、再度半導体ウェハ
１１の表向全面を純水リンスすることによって高濃度ア
ルカリ性現像液１５を洗い流す。仁のようにしてレジス
ト膜が除去これるととにガる。Thereafter, the semiconductor wafer 11 is mounted on the spin chuck, and the developer 14 for pattern development is dropped onto the conductor wafer J1, followed by paddle development for about 50 seconds. After rinsing with pure water for 20 seconds, the semiconductor wafer 11 is rotated at 500 rpm, and the highly concentrated alkaline developer 15 is continuously dripped from the dedicated nozzle 16 for 2 minutes. In general, the unshocked portion of a positive resist resists a low concentration alkaline developer such as the developer 14 for developing the pattern area.
However, the solubility can be increased by increasing the concentration of the developer. As a result, the positive type resist film 12 is dissolved and removed from the peripheral edge of the semiconductor wafer 11. 1- After that, the high concentration alkaline developer 15 is washed away by rinsing the entire surface of the semiconductor wafer 11 with pure water again. If the resist film is removed in a similar manner, it will be damaged.
し／こがって、パターン部現像用現像液］ ４．１り高
濃度のアルカリ性現像液１５が＃導体ウェハ１１の周縁
部のみに滴下されることになシ、ポジ型レジスト１２の
未露光部分がこの高濃度アルカリ性現像液１５によって
溶解され除去される。4.1 The highly concentrated alkaline developer 15 is dropped only on the peripheral edge of the # conductor wafer 11, and the positive resist 12 is not exposed to light. The portion is dissolved and removed by this highly concentrated alkaline developer 15.
々お、前記実施例においては、パターン部分を現像した
後に半導体ウェハ１１の周縁部のレジスト膜を除去し７
たが、このような限定にとられれるとと々く、例えばパ
ターン部分の現像前、あるいはポジ型レジスト１２を塗
布した直後に実施しても同等の効果が得られる。In the above embodiment, the resist film on the peripheral edge of the semiconductor wafer 11 is removed after the pattern portion is developed.
However, as long as such limitations are met, the same effect can be obtained even if the process is performed, for example, before the pattern portion is developed or immediately after the positive resist 12 is applied.
以上説明したように本発明によれば、ポジ型レジスト膜
が形成された半導体ウェハを回転させると共に、周縁部
にパターン現像用現像液より高濃度のアルカリ性現像液
を滴下するため、高濃度のアルカリ性現像液が半導体ウ
ェハの周縁部のみに滴下されることになり、この現像液
によってポジ型レジスト膜が溶解され除去される。した
がって、半導体ウェハ周縁部のレジスト膜が膨潤によシ
盛り上がることな（除去されるため、塵埃の発生が阻止
され歩留シの、向−ヒが実現されると共に、従来のエツ
ジリンス法に使用する装置を流用することができコスト
を低く抑えることができる。As explained above, according to the present invention, a semiconductor wafer on which a positive resist film is formed is rotated, and an alkaline developer having a higher concentration than a pattern developing developer is dropped onto the peripheral edge of the semiconductor wafer. The developer is dropped only onto the peripheral edge of the semiconductor wafer, and the positive resist film is dissolved and removed by this developer. Therefore, the resist film on the peripheral edge of the semiconductor wafer does not bulge due to swelling (is removed), thereby preventing the generation of dust and improving yields. Equipment can be reused and costs can be kept low.
第１図は本発明に係るレジスト膜除去方法を示すフロー
チャート、第２図は本発明を実施するための装置を示す
斜視図、第３図および第４図は従来のレジスト膜除去方
法を示すフローチャート、第５図および第６図は従来の
レジスト膜除去方法を実施する装置を示す図で、第５図
はエツジリンス法を実施している状態を示す平面図、第
６図は周辺露光法を実施する装置の側断面図、第７図は
エツジリンス法によってレジスト膜が除去された半導体
ウェハの側断面図である。
１１・・・・半導体ウェハ、１２・・・・ポジ型レジス
ト、１４・・・・パターン部現像用現像液、１５・・・
・高濃度アルカリ性現像液。FIG. 1 is a flowchart showing a resist film removal method according to the present invention, FIG. 2 is a perspective view showing an apparatus for carrying out the invention, and FIGS. 3 and 4 are flowcharts showing a conventional resist film removal method. , Fig. 5 and Fig. 6 are diagrams showing an apparatus for carrying out a conventional resist film removal method. Fig. 5 is a plan view showing a state in which an edge rinsing method is carried out, and Fig. 6 is a diagram showing a state in which a peripheral exposure method is carried out. FIG. 7 is a side sectional view of a semiconductor wafer from which a resist film has been removed by edge rinsing. 11...Semiconductor wafer, 12...Positive resist, 14...Developer for developing pattern portion, 15...
・Highly concentrated alkaline developer.
Claims (1)
せると共に、周縁部にパターン現像用現像液より高濃度
のアルカリ性現像液を滴下することを特徴とする半導体
ウェハ周縁部のレジスト膜除去方法。A method for removing a resist film from a peripheral portion of a semiconductor wafer, comprising rotating a semiconductor wafer on which a positive resist film is formed, and dropping an alkaline developer having a higher concentration than a pattern developing developer onto the peripheral portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9757988A JPH01268125A (en) | 1988-04-20 | 1988-04-20 | Elimination of resist film on periphery of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9757988A JPH01268125A (en) | 1988-04-20 | 1988-04-20 | Elimination of resist film on periphery of semiconductor wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01268125A true JPH01268125A (en) | 1989-10-25 |
Family
ID=14196155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9757988A Pending JPH01268125A (en) | 1988-04-20 | 1988-04-20 | Elimination of resist film on periphery of semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01268125A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100386712B1 (en) * | 2000-02-03 | 2003-06-09 | 엔이씨 일렉트로닉스 코포레이션 | Method of and apparatus for developing exposed photoresist to prevent impurity from being attached to wafer surface |
-
1988
- 1988-04-20 JP JP9757988A patent/JPH01268125A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100386712B1 (en) * | 2000-02-03 | 2003-06-09 | 엔이씨 일렉트로닉스 코포레이션 | Method of and apparatus for developing exposed photoresist to prevent impurity from being attached to wafer surface |
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