JPH01265534A - Equipment for transporting semiconductor device - Google Patents
Equipment for transporting semiconductor deviceInfo
- Publication number
- JPH01265534A JPH01265534A JP63093915A JP9391588A JPH01265534A JP H01265534 A JPH01265534 A JP H01265534A JP 63093915 A JP63093915 A JP 63093915A JP 9391588 A JP9391588 A JP 9391588A JP H01265534 A JPH01265534 A JP H01265534A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- resistance value
- transport
- static electricity
- conductive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 55
- 230000003068 static effect Effects 0.000 abstract description 16
- 230000005611 electricity Effects 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract 2
- 230000015556 catabolic process Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000006378 damage Effects 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Die Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野）
この発明は、半導体装置の製造装置に係り、特に半導体
装置が検査等のために搬送される際、半導体装置に帯電
した静電気による半導体装置の破損を防止するようにし
た半導体装置の搬送装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor device manufacturing apparatus, and in particular, when the semiconductor device is transported for inspection etc., the semiconductor device is damaged due to static electricity charged on the semiconductor device. The present invention relates to a semiconductor device transport device designed to prevent damage.
（従来の技術）
パッケージされた組立後の半導体装置は、各種の検査が
行われるが、この場合、半導体装置は、例えば半導体装
置の製造装置の搬送部分に供給載置され、所定の検査個
所へ搬送される。これを第３図、第４図により説明する
。(Prior Art) A packaged and assembled semiconductor device is subjected to various inspections. In this case, the semiconductor device is, for example, supplied to a transport section of semiconductor device manufacturing equipment and transported to a predetermined inspection location. transported. This will be explained with reference to FIGS. 3 and 4.
第３図および第４図は半導体装置の製造（検査）装置、
例えば検査装置に装着されている従来の搬送装置を示す
断面図であり、１は各種の半導体装置、２はこの半導体
装置１のパッケージで、外部リード３が設けられている
。４は前記半導体装置１が載置される搬送部分であり、
その表面５に半導体装置１が直接接触して搬送される。Figures 3 and 4 show semiconductor device manufacturing (inspection) equipment;
For example, it is a sectional view showing a conventional transfer device installed in an inspection device, in which 1 is various semiconductor devices, 2 is a package of this semiconductor device 1, and external leads 3 are provided. 4 is a transport portion on which the semiconductor device 1 is placed;
The semiconductor device 1 is transported in direct contact with the surface 5.
ところで、従来の搬送部分４の部材は鉄、アルミニウム
、ステンレス等電気抵抗値が小さい金属またはこの金属
の表面をニッケル、クローム等のメツキ処理したものが
使用されている。By the way, the conventional members of the conveyance section 4 are made of metals with low electrical resistance such as iron, aluminum, and stainless steel, or those whose surfaces are plated with nickel, chrome, etc.
次に搬送部分４の断面形状と半導体装置１の接触につい
て説明する。水平に設置された搬送部分４において、外
部からなんらかの力を加えることにより、半導体装置・
１のパッケージ２および外部リード３が、搬送部分４の
表面５および側面６と接触しながら滑走する。また、傾
斜された搬送部分４においても、半導体装置１は、高い
方から低い方へ搬送部分４の表面５および側面６と接触
しながら滑走する。なお、７は搬送部分を取り付ける定
盤である。Next, the cross-sectional shape of the transport portion 4 and the contact between the semiconductor device 1 will be explained. Semiconductor devices and
1 package 2 and external lead 3 slide in contact with surface 5 and side surface 6 of conveying part 4. Further, even on the inclined conveyance section 4, the semiconductor device 1 slides from the higher side to the lower side while contacting the surface 5 and side surface 6 of the conveyance section 4. Note that 7 is a surface plate on which the conveying portion is attached.
また、搬送部分４が使用されている半導体装置の製造装
置内の他の部分、例えば電気特性測定用のソケット、当
該搬送部分４上に供給する他の搬送台、あるいは半導体
装置の製造装置の外部、例えば半導体製品用チューブ（
スティック）、パレット（トレー）、ラック、およびマ
ガジン等から当該搬送部分４上に半導体製品が８載また
は供給される際に、半導体装置１と搬送部分４が直接接
触する。In addition, other parts of the semiconductor device manufacturing apparatus in which the transport section 4 is used, such as sockets for measuring electrical characteristics, other transport tables that are supplied onto the transport section 4, or external parts of the semiconductor device manufacturing apparatus. , for example, tubes for semiconductor products (
When semiconductor products are loaded or supplied onto the transport section 4 from a stick, pallet (tray), rack, magazine, etc., the semiconductor device 1 and the transport section 4 come into direct contact.
従来の半導体装置の製造装置に装着されている搬送部分
４は、前述のように電気抵抗が小さｊＮ金属で形成され
ているため、静電気の帯電した半導体装置１が前記搬送
台部分４に接触すると、静電気の急激な放電が起こり、
半導体装置１の内部回路を破壊する等の問題点があった
。The transport section 4 installed in the conventional semiconductor device manufacturing equipment is made of jN metal with low electrical resistance as described above, so that when the electrostatically charged semiconductor device 1 comes into contact with the transport table section 4, , a sudden discharge of static electricity occurs,
There were problems such as destruction of the internal circuit of the semiconductor device 1.
この発明は、上記のような問題点を解消するためになさ
れたもので、静電気の帯電した半導体装置が、半導体装
置の製造装置に装着されている搬送部分に直接接触して
も、静電気による半導体製品の内部回路破壊を防止でき
る半導体装置の製造装置を提供することを目的とする。This invention was made to solve the above-mentioned problems, and even if a semiconductor device charged with static electricity comes into direct contact with a conveying part installed in a semiconductor device manufacturing equipment, the semiconductor device due to static electricity will be removed. An object of the present invention is to provide a semiconductor device manufacturing apparatus that can prevent damage to the internal circuits of the product.
この発明に係る半導体装置の製造装置は、半導体装置が
直接接触する搬送部分の少なくとも表面部分に、１０３
〜１０１０Ω−ｃｍの電気抵抗値を持ち、かつ耐熱性を
有する導電層を形成したものである。In the semiconductor device manufacturing apparatus according to the present invention, 103
A conductive layer having an electrical resistance value of ~1010 Ω-cm and heat resistance is formed.
この発明においては、半導体装置が直接接触する搬送部
分の少なくとも表面上に電気抵抗値が１０３〜１０１０
Ω−ｃｍの導電層を形成したことから、静電気が帯電し
た半導体装置が直接接触しても、帯電した静電気を電気
抵抗値に応じて、速やかに放電（除電）させることがで
きる。In this invention, at least the surface of the conveyance portion with which the semiconductor device comes into direct contact has an electrical resistance value of 103 to 1010.
Since a conductive layer of Ω-cm is formed, even if a semiconductor device charged with static electricity comes into direct contact with the semiconductor device, the charged static electricity can be quickly discharged (removed) according to the electrical resistance value.
以下、この発明の一実施例を第１図について説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図において、第３図、第４図と同一符号は同じもの
を示し、８は前記搬送部分４の表面上に形成した導電層
で、その電気抵抗値が１０３〜１０１０Ω−ｃｍの導電
性部材からなフている。In FIG. 1, the same reference numerals as in FIGS. 3 and 4 indicate the same parts, and 8 is a conductive layer formed on the surface of the conveying portion 4, and the conductive layer has an electrical resistance value of 10 3 to 10 10 Ω-cm. There are many parts.
また、第２図は半導体装置１の外形が異なる場合の実施
例であり、構成９作用等は第１図の実施例と同様である
。Further, FIG. 2 shows an embodiment in which the external shape of the semiconductor device 1 is different, and the structure 9, operation, etc. are the same as the embodiment shown in FIG.
上記の構成による半導体装置の製造装置は、その目的と
する作業を行う部分へ半導体装置１を搬送または載置さ
せる搬送部分４を有しており、この搬送部分４の形状に
ついては従来の形状をそのまま維持せしめ、搬送部分４
の本来の目的を損なうことはなく、また、たとえ静電気
の帯電した半導体装置１が搬送部分４に直接接触しても
、その接触部分に、徐々に放電する電気抵抗値を有する
導電層８を形成したので、静電気の急激な放電は起こら
ず、電気抵抗値に応じた速やかな除電をすることになり
、その結果、半導体装置１の内部回路を静電気による破
壊から保護することができる。The semiconductor device manufacturing apparatus with the above configuration has a transport section 4 for transporting or placing the semiconductor device 1 to a section where the intended work is performed, and the shape of this transport section 4 is similar to the conventional shape. Keep it as it is, conveyance part 4
In addition, even if the electrostatically charged semiconductor device 1 directly contacts the transport portion 4, the conductive layer 8 having an electrical resistance value that gradually discharges is formed at the contact portion. Therefore, a sudden discharge of static electricity does not occur, and the static electricity is quickly removed in accordance with the electrical resistance value, and as a result, the internal circuit of the semiconductor device 1 can be protected from damage caused by static electricity.
なお、上記実施例では搬送部分４の表面５に１０３〜１
０′。Ω−ｃｍの電気抵抗値を持つ導電性部材からなる
導電層８を形成したものを示したが、搬送部分４全体を
前記導電性部材により形成しても同様の効果を期待でき
る。In addition, in the above embodiment, 103 to 1
0′. Although the conductive layer 8 made of a conductive material having an electrical resistance value of Ω-cm is shown, the same effect can be expected even if the entire transport portion 4 is made of the conductive material.
ところで、上記説明では、搬送部分４の設けられている
温度環境については触れていないが、前記搬送部分４が
、５０℃以上の高温となる場合には、その実使用温度以
上の耐熱性をもち、かつ電気抵抗値は上記の場合と同様
に１０３〜１０１０Ω−Ｃｍの導電性部材を使用するこ
とで解決できる。Incidentally, the above description does not mention the temperature environment in which the conveyance section 4 is provided, but when the conveyance section 4 reaches a high temperature of 50 ° C. or higher, it has a heat resistance higher than the actual operating temperature, Moreover, the electric resistance value can be solved by using a conductive member having a value of 10 3 to 10 10 Ω-Cm as in the above case.
−例としては、黒鉛、鉄粉、銅粉等を含有したＰＢＴ（
ポリブチレンチレフタレ−）−）、ＰＩ（ポリイミド）
、ＰＥＴ（ポリエチレンテレフタレート）等がある。- Examples include PBT containing graphite, iron powder, copper powder, etc.
Polybutylene terephthalate)-), PI (polyimide)
, PET (polyethylene terephthalate), etc.
以上説明したようにこの発明は、搬送部分上の半導体装
置が直接接触する少なくとも表面部分に１０３〜１０Ｉ
０Ω−Ｃ１ｎの電気抵抗値を持ち、かつ耐熱性を有する
導電層を形成したので、半導体装置の製造工程中に静電
気が帯電した半導体装置が、搬送部分に接触したとして
も静電気は徐々に、かつ速やかに放電される。したがっ
て、静電気の急激な放電による半導体装置の破壊を防止
できる効果がある。As explained above, the present invention provides at least 103 to 10I on the surface portion with which the semiconductor device on the transport portion directly contacts.
Since we have formed a conductive layer that has an electrical resistance value of 0Ω-C1n and is heat resistant, even if a semiconductor device that has been charged with static electricity during the manufacturing process of the semiconductor device comes into contact with the conveying part, the static electricity will gradually disappear. Discharges quickly. Therefore, it is possible to prevent damage to the semiconductor device due to rapid discharge of static electricity.
第１図はこの発明の一実施例を示す搬送装置の概略断面
図、第２図は、第１図の実施例の半導体装置と外形が異
なる場合の実施例を示す概略断面図、第３図は電気抵抗
値の小さい部材で構成された搬送部分に半導体装置が載
置された従来の搬送装置を示す概略断面図は、第４図は
、第３図の半導体装置と外形が異なる場合の従来例を示
す概略断面図である。
図において、１は半導体装置、２はパッケージ、３は外
部リード、４は搬送部分、５は搬送部分の表面、６は搬
送部分の側面、７は搬送部分を取り付ける定盤、８は導
電層である。
なお、、各図中の同一符号は同一または相当部分を示す
。
代理人 大 岩 増 雄 （外２名）第１図
第２図
第３図
第４図
１、事件の表示 特願昭６３−９３９１５号２０発
明の名称 半導体装置の搬送装置３、補正をする者
５、補正の対象
明細書の特許請求の範囲の欄２発明の詳細な説明の欄２
図面の簡単な説明の欄および図面６、補正の内容
（１） 明細書の特許請求の範囲を別紙のように補正
する。
（２）明細書第４頁１０〜１１行、第７頁１〜２行の「
電気抵抗値を持ち、かつ耐熱性を有する導ＩＬＬＳ層」
を、いずれも「電気抵抗値を持つ導電層」と補正する。
（３） 同じく第７頁１４行の「概略断面図は、」を
、「概略断面図、」と補正する。
（匂 図面中、第２図を別紙のように補正する。
以上
２、特許請求の範囲
半導体装置を搬送部分に載置し、所定個所へ搬送する搬
送手段を有する搬送装置において、前記搬送部分の前記
半導体装置が直接接触する少なくとも表面部分に、１０
３〜１０Ｉ６Ω−ｃｍの電気抵抗−値−を持−２−導電
層を形成したことを特徴とする半導体装置の搬送装置。
第２図FIG. 1 is a schematic cross-sectional view of a transfer device showing an embodiment of the present invention, FIG. 2 is a schematic cross-sectional view showing an embodiment having a different external shape from the semiconductor device of the embodiment shown in FIG. 1, and FIG. 4 is a schematic cross-sectional view showing a conventional transport device in which a semiconductor device is placed on a transport section made of a member with a small electrical resistance value. FIG. It is a schematic sectional view showing an example. In the figure, 1 is a semiconductor device, 2 is a package, 3 is an external lead, 4 is a transport section, 5 is a surface of the transport section, 6 is a side surface of the transport section, 7 is a surface plate on which the transport section is attached, and 8 is a conductive layer. be. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent: Masuo Oiwa (2 others) Figure 1, Figure 2, Figure 3, Figure 4, Figure 1, Indication of the case: Japanese Patent Application No. 63-93915 20 Title of the invention: Transfer device for semiconductor devices 3, Person making the amendment 5. Claims column 2 of the specification subject to amendment 2 Detailed description of the invention column 2
Brief Description of Drawings, Drawing 6, Contents of Amendment (1) The claims of the specification are amended as shown in the attached sheet. (2) “On page 4, lines 10-11 of the specification, and on page 7, lines 1-2,”
Conductive ILLS layer with electrical resistance and heat resistance
are corrected as "conductive layers with electrical resistance". (3) Similarly, on page 7, line 14, "schematic sectional view is" is corrected to "schematic sectional view." (In the drawings, FIG. 2 has been amended as shown in the attached sheet.) Claim 2 A conveyance device having a conveyance means for placing a semiconductor device on a conveyance portion and conveying it to a predetermined location. 10 on at least the surface portion with which the semiconductor device directly contacts.
A transport device for a semiconductor device, characterized in that a conductive layer having an electrical resistance value of 3 to 10 I6 Ω-cm is formed. Figure 2
Claims (1)
搬送手段を有する搬送装置において、前記搬送部分の前
記半導体装置が直接接触する少なくとも表面部分に、１
０＾３〜１０＾１＾０Ω−ｃｍの電気抵抗を持ち、かつ
耐熱性を有する導電層を形成したことを特徴とする半導
体装置の搬送装置。In a transport device having a transport means for placing a semiconductor device on a transport part and transporting it to a predetermined location, at least a surface portion of the transport part with which the semiconductor device directly contacts, 1
A semiconductor device transport device characterized by forming a conductive layer having an electrical resistance of 0^3 to 10^1^0 Ω-cm and having heat resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63093915A JPH01265534A (en) | 1988-04-15 | 1988-04-15 | Equipment for transporting semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63093915A JPH01265534A (en) | 1988-04-15 | 1988-04-15 | Equipment for transporting semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01265534A true JPH01265534A (en) | 1989-10-23 |
Family
ID=14095763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63093915A Pending JPH01265534A (en) | 1988-04-15 | 1988-04-15 | Equipment for transporting semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01265534A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6186344B1 (en) | 1995-09-07 | 2001-02-13 | Samsung Electronics Co., Ltd. | Cassette for loading glasses for liquid crystal display device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5812998B2 (en) * | 1977-10-31 | 1983-03-11 | 株式会社島津製作所 | X-ray fluoroscope |
| JPS6382976A (en) * | 1986-09-24 | 1988-04-13 | 日立マイクロコンピユ−タエンジニアリング株式会社 | Tray for semiconductor device |
-
1988
- 1988-04-15 JP JP63093915A patent/JPH01265534A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5812998B2 (en) * | 1977-10-31 | 1983-03-11 | 株式会社島津製作所 | X-ray fluoroscope |
| JPS6382976A (en) * | 1986-09-24 | 1988-04-13 | 日立マイクロコンピユ−タエンジニアリング株式会社 | Tray for semiconductor device |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6186344B1 (en) | 1995-09-07 | 2001-02-13 | Samsung Electronics Co., Ltd. | Cassette for loading glasses for liquid crystal display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4424900A (en) | Anti-static packages and packaging material | |
| TW200735138A (en) | Multi-layer inductive element for integrated circuit | |
| KR930014905A (en) | Hermetic Packaged High Density Interconnect (HDI) Electronic Systems | |
| US5041319A (en) | Static protective laminated material | |
| JPH01265534A (en) | Equipment for transporting semiconductor device | |
| US3723943A (en) | Methods of securing flat integrated circuits to printed wiring boards and a support device therefor | |
| JP2008024401A (en) | Conveying device with positioning means | |
| US6541988B2 (en) | Circuit board test fixture with electrostatic discharge (ESD) protection | |
| CN210197937U (en) | Anti-static drying device and production line comprising same | |
| JPH04254769A (en) | Method for measuring characteristic of electronic parts | |
| JPH0349198A (en) | Electrostatic discharge protecting apparatus | |
| US5906281A (en) | Anti-static packing container | |
| KR950021197A (en) | Dry Etching Equipment | |
| JP4710072B2 (en) | Cover tape | |
| JPS588156B2 (en) | How to install electronic parts | |
| US20060011509A1 (en) | Packaging system and method for storing electronic components | |
| CN109737708B (en) | Antistatic drying device and production line comprising same | |
| KR100272269B1 (en) | Test pattern for semiconductor | |
| JPH02281638A (en) | Protective device of semiconductor device | |
| JPH10107116A (en) | Substrate treating device | |
| US20110247868A1 (en) | Printed circuit board | |
| JPH02198157A (en) | Integrated circuit case | |
| JPH067245U (en) | Rack for baking treatment of reels with carrier tape | |
| KR860000476B1 (en) | Manufacturing method of lead wire | |
| CN110686790A (en) | Integrated temperature measurement structure of AC/DC charging socket |