JPH01251331A - Information recording medium - Google Patents
Information recording mediumInfo
- Publication number
- JPH01251331A JPH01251331A JP63076067A JP7606788A JPH01251331A JP H01251331 A JPH01251331 A JP H01251331A JP 63076067 A JP63076067 A JP 63076067A JP 7606788 A JP7606788 A JP 7606788A JP H01251331 A JPH01251331 A JP H01251331A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- recording layer
- recording medium
- layer
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000203 mixture Substances 0.000 claims description 12
- 239000010410 layer Substances 0.000 abstract description 36
- 239000000758 substrate Substances 0.000 abstract description 13
- 229910045601 alloy Inorganic materials 0.000 abstract description 7
- 239000000956 alloy Substances 0.000 abstract description 7
- 239000011241 protective layer Substances 0.000 abstract description 7
- 238000002425 crystallisation Methods 0.000 abstract description 5
- 230000008025 crystallization Effects 0.000 abstract description 5
- 239000011347 resin Substances 0.000 abstract description 5
- 229920005989 resin Polymers 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 4
- 229910052798 chalcogen Inorganic materials 0.000 abstract description 2
- 150000001787 chalcogens Chemical class 0.000 abstract description 2
- 238000003848 UV Light-Curing Methods 0.000 abstract 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 125000005843 halogen group Chemical group 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910007423 Sn2Sb Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は光ビームの照射により記録層に原子配列の変化
に伴う光学的特性の変化を生じさせて、情報の記録、消
去を繰返し行ない、この光学的特性の変化を検出して情
報が再生される情報記録媒体に関する。Detailed Description of the Invention [Objective of the Invention] (Industrial Field of Application) The present invention is capable of recording information by causing a change in optical properties due to a change in atomic arrangement in a recording layer by irradiation with a light beam. The present invention relates to an information recording medium in which information is reproduced by repeatedly erasing and detecting changes in optical characteristics.
（従来の技術）
情報の記録、消去の繰返しが可能な情報記録媒体として
、光ビームの照射による相変化を利用したものが開発さ
れている。(Prior Art) Information recording media that utilize phase change caused by irradiation with a light beam have been developed as information recording media on which information can be repeatedly recorded and erased.
このような情報記録媒体に情報を記録する際には、まず
光ビームを記録媒体全面照射して記録層を結晶性の高い
状態（以下結晶状経とする）とする。次に情報を記録す
るために、短い強いパルス光を記録層に照射して加熱し
急冷して記録層を原子配列が乱れた状態（以下、非晶質
状態とする）とする。記録された情報を消去する場合に
は、長い弱いパルス光を記録層に照射して加熱し徐冷し
て非晶質状態から再び結晶状態に・戻す。このような結
晶状態と非晶質状態とでは原子配列の変化に伴って反射
率、透過率等の光学的特性が変化するため、この光学的
特性の変化を検出することにより、記録した情報を再生
している。When recording information on such an information recording medium, first, the entire surface of the recording medium is irradiated with a light beam to bring the recording layer into a highly crystalline state (hereinafter referred to as crystalline state). Next, in order to record information, the recording layer is irradiated with short, strong pulsed light to heat it and rapidly cool it, thereby bringing the recording layer into a state in which the atomic arrangement is disordered (hereinafter referred to as an amorphous state). When erasing recorded information, the recording layer is irradiated with long, weak pulsed light to heat it and slowly cool it, changing it from an amorphous state to a crystalline state again. Optical properties such as reflectance and transmittance change between the crystalline state and the amorphous state due to changes in atomic arrangement, so by detecting changes in these optical properties, recorded information can be analyzed. It's playing.
このような相変化を利用した情報記録媒体としては、特
開昭６０−１７９９５２号、特開昭６０−１７９９５３
号、特開昭６１−６８０６号公報等がある。これらの公
報においては、記録層の組成としてＡｕ ｙ、 Ｔｅ
１６０−ｘ、 Ａｇ Ｘ Ｔｅ １．ｏ−Ｘ（１０≦
工≦４０原子％）等が提案されている。Information recording media that utilize such phase change include Japanese Patent Application Laid-Open No. 60-179952 and Japanese Patent Application Laid-Open No. 60-179953.
No. 61-6806, etc. In these publications, the composition of the recording layer is Au y, Te
160-x, Ag X Te 1. o-X(10≦
40 at%), etc. have been proposed.
しかしこれらの材料では、記録状態の安定性は得られる
が、記録に必要なエネルギーが大きいため、記録、消去
特性面で問題点が残った。However, although these materials provide stability in the recording state, problems remain in terms of recording and erasing characteristics because the energy required for recording is large.
（発明が解決しようとする課題）
以上詳述したように従来のＡｕ ＊ Ｔｅ ｌ０Ｑ−ｘ
）Ａｇ ｘ Ｔｅ ＋ｏｏ−ｘ （１０≦Ｘ≦４０
）を材料として用いた情報記録媒体では、結晶化の速度
が遅い、耐酸化性が不十分であるといった理由から実用
化が困難であった。(Problems to be Solved by the Invention) As detailed above, the conventional Au*Te 10Q-x
)Ag x Te +oo-x (10≦X≦40
) has been difficult to put into practical use because of its slow crystallization rate and insufficient oxidation resistance.
本発明では、上記欠点を解消し、記録、消去特性に優れ
た情報記録媒体を提供することを目的とする。An object of the present invention is to eliminate the above-mentioned drawbacks and provide an information recording medium with excellent recording and erasing characteristics.
［発明の構成コ
（課題を解決するための手段）
本発明の情報記録媒体は、記録層の平均組成がＳｎ２Ｓ
ｂ６Ｓｅ、＋であることを特徴とするものである。[Configuration of the Invention (Means for Solving the Problems) The information recording medium of the present invention has a recording layer having an average composition of Sn2S.
b6Se, +.
（作用）
本発明の情報記録媒体の記録層は、Ｓｎ２Ｓｂ ６ Ｓ
ｅ １１からなる合金である。この組成の金属間化合物
を形成する組成である。金属間化合物は合金の成分元素
の原子数が一定の整数比を保ち、それらの成分原子が単
位となって結晶格子中で特定の位置を占めている合金で
ある。・このため、この組成の結晶は単一相となり非晶
質から結晶質への相転移が起こる際、短距離の原子移動
で結晶化するため、結晶化速度が極めて速い。(Function) The recording layer of the information recording medium of the present invention is made of Sn2Sb6S
It is an alloy consisting of e 11. This composition forms an intermetallic compound. An intermetallic compound is an alloy in which the number of atoms of the constituent elements of the alloy maintains a constant integer ratio, and these constituent atoms form a unit and occupy a specific position in the crystal lattice.・For this reason, a crystal with this composition becomes a single phase, and when a phase transition from amorphous to crystalline occurs, crystallization occurs through short-distance atomic movement, resulting in an extremely fast crystallization rate.
またこの合金は、カルコゲン元素であるＳｅを含むため
、非晶質状態を安定に保持させることができる。Furthermore, since this alloy contains Se, which is a chalcogen element, it is possible to stably maintain an amorphous state.
本発明に用いられる情報記録媒体の構造を示す断面図は
第１図に示す通りである。A sectional view showing the structure of the information recording medium used in the present invention is shown in FIG.
この情報記録媒体は、基板１２．記録層１３および有機
保護層１４とから構成されている。基板１２はガラスや
プラスチック材料（例えば、ポリメチルメタクリレート
樹脂やポリカーボネート樹脂など）からなるものである
。この基板１２上には、光ビームの照射により層変化を
生じる記録層１３が形成される。この記録層１３の平均
組成はＳｎ２Ｓｂ６Ｓｅ１１である。さらに、この記録
層１３上に紫外線硬化樹脂等からなる有機保護層１４が
形成されている。This information recording medium has a substrate 12. It is composed of a recording layer 13 and an organic protective layer 14. The substrate 12 is made of glass or plastic material (eg, polymethyl methacrylate resin, polycarbonate resin, etc.). A recording layer 13 is formed on this substrate 12, which undergoes a layer change upon irradiation with a light beam. The average composition of this recording layer 13 is Sn2Sb6Se11. Furthermore, an organic protective layer 14 made of ultraviolet curing resin or the like is formed on the recording layer 13.
また、本発明で用いられる情報記録媒体は第２図及び第
３図に示すような構造であってもよい。Furthermore, the information recording medium used in the present invention may have a structure as shown in FIGS. 2 and 3.
第２図に示す情報記録媒体では、記録層１３の経時変化
を防ぐために金属、半金属の酸化物、弗化物、硫化物、
窒化物等からなる無機物保護層１５が記録層１３を挟ん
だ構造となっている。第３図に示す情報記録媒体では、
前記無機物保護層１５を形成する材料中に記録層１３を
形成する材料が分散した複合層１６を有する構造となっ
ている。In the information recording medium shown in FIG. 2, in order to prevent the recording layer 13 from deteriorating over time, oxides, fluorides, sulfides,
The recording layer 13 is sandwiched between an inorganic protective layer 15 made of nitride or the like. In the information recording medium shown in Fig. 3,
The structure includes a composite layer 16 in which the material forming the recording layer 13 is dispersed in the material forming the inorganic protective layer 15.
次に前記情報記録媒体１０の製造方法を第４図及び第５
図に沿って説明する。第４図は本発明に用いられる成膜
装置の側面図であり、第５図は第４図に示した・成膜装
置の底面図である。Next, the method for manufacturing the information recording medium 10 is shown in FIGS. 4 and 5.
This will be explained according to the diagram. FIG. 4 is a side view of the film forming apparatus used in the present invention, and FIG. 5 is a bottom view of the film forming apparatus shown in FIG. 4.
この成膜装置は、真空器１７．排出ボート１８゜排気装
置１９．ガス導入ボート２０．アルゴンガスボンベ２１
．支持装置２２．スパッタ源２４ａ。This film forming apparatus has a vacuum chamber 17. Discharge boat 18° Exhaust device 19. Gas introduction boat 20. Argon gas cylinder 21
．． Support device 22. Sputter source 24a.
２４ｂ、２４ ｃ及びモニタ装置２６ａ、２６ｂ。24b, 24c and monitor devices 26a, 26b.
２６ｃとから構成されている。26c.
真空容器１７は排出ポート１８を介して排気装置１９に
接続されており、また、ガス導入ボート２０を介してア
ルゴンガスボンベ２１に接続されている。真空容器１７
中上部には、支持装置２２が設けられ、この支持装置に
水平に基板１２が支架されており、基板１２は支持装置
２２を軸に回転することができる。また、真空容器１７
中底部には、基板１２に対面してスパッタ源２４ａ、２
４ｂ、２４ｃが設けられており、これらスパッタ源には
高周波電源が接続されている。また、スパッタ源２３．
２４の上方にはモニター装置２６ａ。The vacuum vessel 17 is connected to an exhaust device 19 via an exhaust port 18 and to an argon gas cylinder 21 via a gas introduction boat 20. Vacuum container 17
A support device 22 is provided at the middle upper portion, and the substrate 12 is supported horizontally on this support device, and the substrate 12 can rotate about the support device 22 as an axis. In addition, the vacuum container 17
Sputtering sources 24a, 2 are provided at the middle bottom facing the substrate 12.
4b and 24c are provided, and a high frequency power source is connected to these sputter sources. In addition, the sputter source 23.
Above 24 is a monitor device 26a.
２６ｂ、２６ｃが設置されている。26b and 26c are installed.
この装置を用いて基板１２に記録層を成膜する場合には
、まず排気装置１９により容器内の空気を排気し、続い
てアルゴンガスボンベ２１よりアルゴンガスを導入して
容器内を所定の圧力に保持する。そして基板１２を回転
させつつ、スパッタ源２４ａ、２４ｂ、２４ｃに所定時
間電力を印加する。モニタ装置２６ａ、２６ｂ、２６ｃ
は各々スパッタ源からの元素のスパッタ量をモニタし、
このモニタした量が所定の値になるように各スパッタ源
に投入する電力を調節するようになっている。これによ
り基板１２に記録層が形成される。When forming a recording layer on the substrate 12 using this apparatus, first the air in the container is exhausted by the exhaust device 19, and then argon gas is introduced from the argon gas cylinder 21 to bring the inside of the container to a predetermined pressure. Hold. Then, while rotating the substrate 12, power is applied to the sputtering sources 24a, 24b, and 24c for a predetermined period of time. Monitor devices 26a, 26b, 26c
monitor the amount of sputtered elements from each sputtering source,
The power input to each sputtering source is adjusted so that the monitored amount becomes a predetermined value. As a result, a recording layer is formed on the substrate 12.
（実施例）
一実験１−
本実験では多元同時スパッタ法により記録膜を形成した
。(Example) Experiment 1 - In this experiment, a recording film was formed by a multi-source simultaneous sputtering method.
真空容器内に所望のＳｎ２Ｓｂ６Ｓｅ＋ｔのスパッタ源
を設け、容器内を５ Ｘ １０−’Ｔｏｒｒまで排気し
た。次にＡｒガスを導入し５ Ｘ １０−”Ｔｏｒｒに
全体の圧力を調節した。基板として充分洗浄した外径１
３０ ｍｍ、板厚１，２■の円板状カーボネート基板を
用い、この基板を６ Ｏｒｐｍで回転しつつモニタによ
り各元素のスパッタ量をモニタして各スパッタ源に投入
する電力を制御し、全体の膜厚が１００ＯＡになるまで
各元素を堆積させて記録層を成膜した。A desired sputtering source of Sn2Sb6Se+t was provided in a vacuum container, and the inside of the container was evacuated to 5.times.10-' Torr. Next, Ar gas was introduced and the overall pressure was adjusted to 5 × 10-” Torr.
Using a disk-shaped carbonate substrate with a thickness of 30 mm and a plate thickness of 1.2 mm, the amount of sputtering of each element was monitored by a monitor while rotating this substrate at 6 Orpm, and the power input to each sputtering source was controlled. A recording layer was formed by depositing each element until the film thickness reached 100 OA.
更にこの記録層上に有機保護層として紫外線硬化樹脂を
約１０μｌスピンコータによりオーバーコートし、紫外
線を照射して硬化させ所望する組成の情報記録媒体を形
成した。Further, about 10 μl of ultraviolet curable resin was overcoated as an organic protective layer on this recording layer using a spin coater, and the resin was cured by irradiation with ultraviolet rays to form an information recording medium having a desired composition.
一実験例２−
実験例１に示した方法により１．記録層の組成がＳｎ
２ Ｓｂ ｂ Ｓｅ Ｉ’ｌの試料と、この試料の比較
例としてのＳｂ Ｓｅの２ＦＩｉ類の試料を作成した。Experimental Example 2 - 1. By the method shown in Experimental Example 1. The composition of the recording layer is Sn
A sample of 2Sb b Se I'l and a sample of 2FIi of Sb Se as a comparative example of this sample were prepared.
これらの試料を温度６５℃、湿度９０％ＲＨの環境に５
００時間暴露し、このときの初期反射率（Ｒｉ）と経時
反射率（Ｒｔ）との比（Ｒｔ／Ｒ１）を検出した。この
結果を第６図に示す。この検出結果からもわかる通り、
Ｓｂ Ｓｅ組成の試料では反射率変化がみられるのに対
して、Ｓｎ２Ｓｂ 、 Ｓｅ 、、からなる試料では経
時反射率は初期反射率とほとんど変化がみられず安定で
あった。These samples were placed in an environment with a temperature of 65°C and a humidity of 90% RH.
00 hours, and the ratio (Rt/R1) between the initial reflectance (Ri) and the elapsed reflectance (Rt) at this time was detected. The results are shown in FIG. As can be seen from this detection result,
While a change in reflectance was observed in the sample with the SbSe composition, the reflectance over time of the sample composed of Sn2Sb, Se, etc. was stable with almost no change from the initial reflectance.
−実験例３−
実験例１に示した方法により記録層組成Ｓｎｚｓｂ６ｓ
ｅ１１膜厚１０１０００Ａｎ ｔ ｒｏｍの試料を作成
した（未照射部）。まず、この試料にビーム径約１μｍ
φに絞った６ｍＷ１５μｓの半導体レーザ光（波長８３
０ｎｍ）を照射すると、この照射部の反射率が変化した
（未記録部）。次に、１５ｍＷ３００ｎｓの半導体レー
ザ光（波長８３０ｎｍ）を照射すると、その照射部の反
射率は元に戻ることが確認された（記録部）。次いでこ
の記録部と未記録部の結晶状態を比較するため、透過型
電子顕微鏡を用いて回折パターンを観察した。この実験
で用いた試料から有機物保護層を剥離して記録層の状態
を回折パターンから観察したところ、レーザ光未照射部
に特有のハローパターンが認められた。また記録部では
、未記録部に近い非晶質特有のハローパターンが認めら
れた。さらに未記録部では、結晶構造を示す回折リング
とスポットができていることが観察された。- Experimental Example 3 - Recording layer composition Snzsb6s by the method shown in Experimental Example 1
A sample with an e11 film thickness of 101,000 Antrom was prepared (unirradiated area). First, a beam with a diameter of approximately 1 μm was applied to this sample.
6 mW 15 μs semiconductor laser light focused on φ (wavelength 83
0 nm), the reflectance of this irradiated area changed (unrecorded area). Next, when a semiconductor laser beam (wavelength: 830 nm) of 15 mW and 300 ns was irradiated, it was confirmed that the reflectance of the irradiated area returned to its original value (recording area). Next, in order to compare the crystalline state of the recorded portion and the unrecorded portion, the diffraction pattern was observed using a transmission electron microscope. When the organic protective layer was peeled off from the sample used in this experiment and the state of the recording layer was observed from the diffraction pattern, a unique halo pattern was observed in the area not irradiated with the laser beam. In addition, in the recorded area, a halo pattern peculiar to amorphous material was observed, which is close to that in the unrecorded area. Furthermore, in the unrecorded area, it was observed that diffraction rings and spots indicating a crystal structure were formed.
−実験例４− ここでは記録部の消去特性について評価した。-Experiment example 4- Here, the erasing characteristics of the recorded portion were evaluated.
実験例１に示した方法により作成した記録層組成がＳｎ
２Ｓｂ ６Ｓｅ １１．膜厚１０００Ａｎ１０００Ａ
ｎの試料と、この比較例として記録層組成が５ｂＳｅ、
膜厚１０１０００Ａｎ ｔ ｒｏｍの試料を作成した。The recording layer composition prepared by the method shown in Experimental Example 1 was Sn.
2Sb 6Se 11. Film thickness 1000An1000A
n sample, and as a comparative example, the recording layer composition was 5bSe,
A sample with a film thickness of 101,000 Antrom was prepared.
各々の試料に対して、反射率が一定になるまで５ ｍ
Ｗ ４μｓのパルス光を繰返し照射し、各々の記録層を
結晶化させた。表はこのときの反射率が一定になるまで
のパルス照射回数を示したものである。Ｓｎ ２ Ｓｂ
６Ｓ、ｅ １１からなる記録層はＳｅ Ｓｂからなる
記録層と比較して、少ない照射回数で反射率が一定にな
り高速で結晶化がおこることが確認できた。5 m for each sample until the reflectance was constant.
Pulse light of W 4 μs was repeatedly irradiated to crystallize each recording layer. The table shows the number of pulse irradiations until the reflectance becomes constant at this time. Sn 2 Sb
It was confirmed that the recording layer made of 6S, e11 had a constant reflectance with fewer irradiations and crystallization occurred at a higher speed than the recording layer made of SeSb.
表 パルス照射回数
［発明の効果］
以上説明したように本発明の情報記録媒体によれば、情
報の記録及び消去が高速で行うことができ、記録状態の
安定性に優れた十分実用に耐えうろことができるもので
ある。Table Number of pulse irradiations [Effects of the invention] As explained above, according to the information recording medium of the present invention, information can be recorded and erased at high speed, and the recording state is excellent in stability and is sufficiently durable for practical use. It is something that can be done.
第１図乃至第３図は本発明で用いられる情報記録媒体の
層構造を示す断面図、第４図は成膜装置の断面図、第５
図は成膜装置の底面図、′Ｗ５６図は暴露時間と反射率
比を示すグラフである。
１２ ・・・ 基板
１３ ・・・ 記録層1 to 3 are cross-sectional views showing the layer structure of the information recording medium used in the present invention, FIG. 4 is a cross-sectional view of the film forming apparatus, and FIG.
The figure is a bottom view of the film forming apparatus, and figure 'W56 is a graph showing exposure time and reflectance ratio. 12... Substrate 13... Recording layer
Claims (1)
により、情報が記録、消去される記録層を有する情報記
録媒体において、前記記録層の平均組成がＳｎ＿２Ｓｂ
＿６Ｓｅ＿１＿１であることを特徴とする情報記録媒体
。In an information recording medium having a recording layer in which information is recorded and erased by causing a change in atomic arrangement by irradiation with a light beam, the average composition of the recording layer is Sn_2Sb.
An information recording medium characterized by being _6Se_1_1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63076067A JPH01251331A (en) | 1988-03-31 | 1988-03-31 | Information recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63076067A JPH01251331A (en) | 1988-03-31 | 1988-03-31 | Information recording medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01251331A true JPH01251331A (en) | 1989-10-06 |
Family
ID=13594432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63076067A Pending JPH01251331A (en) | 1988-03-31 | 1988-03-31 | Information recording medium |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01251331A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02243388A (en) * | 1989-03-17 | 1990-09-27 | Fuji Xerox Co Ltd | Optical recording medium |
-
1988
- 1988-03-31 JP JP63076067A patent/JPH01251331A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02243388A (en) * | 1989-03-17 | 1990-09-27 | Fuji Xerox Co Ltd | Optical recording medium |
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