JPH01199333A - Information recording medium - Google Patents

Information recording medium

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Publication number
JPH01199333A
JPH01199333A JP63022041A JP2204188A JPH01199333A JP H01199333 A JPH01199333 A JP H01199333A JP 63022041 A JP63022041 A JP 63022041A JP 2204188 A JP2204188 A JP 2204188A JP H01199333 A JPH01199333 A JP H01199333A
Authority
JP
Japan
Prior art keywords
recording
recording layer
recording medium
added
information recording
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63022041A
Other languages
Japanese (ja)
Inventor
Naomasa Nakamura
直正 中村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP63022041A priority Critical patent/JPH01199333A/en
Publication of JPH01199333A publication Critical patent/JPH01199333A/en
Pending legal-status Critical Current

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  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)

Abstract

PURPOSE:To form an information recording medium having excellent recording and erasing characteristics by specifying the average compsn. of a recording layer. CONSTITUTION:The average compsn. of the recording layer is MxTe100-x (where M is a metal selected from Ag, Au, Pd, Pt and the total content of the metal expressed by M is 0atom.%<x<10atom.%). Of the constituting components, a chalcogen element such as Te is capable of stably maintaining an amorphous state by allowing with the metal expressed by M. The metal expressed by M exhibits the excellent corrosion resistance by alloying with Te. Further, the element expressed by M has the effect of constituting a crystal nucleus at the time of crystallization and allows the crystallization at a high speed. The recording and erasing characteristics are thereby improved, the recording state is stabilized and the quantity of reproduction signals is relatively increased.

Description

【発明の詳細な説明】 [発明の目的] (産業上の利用分野) 本発明は光ビームの照射により記録層に原子配列の変化
に伴う光学的特性の変化を生じさせて、情報の記録、消
去を繰返し行ない、この光学的特性の変化を検出して情
報を再生する情報記録媒体に関する。
Detailed Description of the Invention [Objective of the Invention] (Industrial Field of Application) The present invention is capable of recording information by causing a change in optical properties due to a change in atomic arrangement in a recording layer by irradiation with a light beam. The present invention relates to an information recording medium that reproduces information by repeatedly performing erasing and detecting changes in optical characteristics.

(従来の技術) 情報の記録、消去の繰返しが可能な情報記録媒体として
光ビーム照射による相変化を利用したものが開発されて
いる。
(Prior Art) Information recording media that utilize phase change caused by light beam irradiation have been developed as information recording media that can repeatedly record and erase information.

このような情報記録媒体に情報を記録する際には、まず
光ビームを記録媒体全面照射して記録層を結晶性の高い
状態(以下結晶状態とする)とする。次に情報を記録す
るために、短い強いパルス光を記録層に照射して加熱し
急冷して記録層を原子配列が乱れた状態(以下、非晶質
状態とする)とする。記録された情報を消去する場合に
は、長い弱いパルス光を記録層に照射して加熱し徐冷し
て再び結晶状態とする。このような結晶状態と非晶質状
態とでは原子配列の変化に伴って反射率、透過率等の光
学的特性が変化するため、この光学的特性の変化を検出
することにより、情報を再生している。
When recording information on such an information recording medium, first, the entire surface of the recording medium is irradiated with a light beam to bring the recording layer into a highly crystalline state (hereinafter referred to as a crystalline state). Next, in order to record information, the recording layer is irradiated with short, strong pulsed light to heat it and rapidly cool it, thereby bringing the recording layer into a state in which the atomic arrangement is disordered (hereinafter referred to as an amorphous state). When erasing recorded information, the recording layer is irradiated with long, weak pulsed light to heat it and slowly cool it to a crystalline state again. Since optical properties such as reflectance and transmittance change between the crystalline state and the amorphous state due to changes in atomic arrangement, information can be reproduced by detecting changes in these optical properties. ing.

上記技術の開示例としては、特開昭60−179952
号、特開昭60−179953号、特開昭61−680
6号公報等がある。これらの公報においてAu x T
(3too−x * Ag x Te 5on−x(1
0≦X≦40原子%)等が提案されている。
An example of the disclosure of the above technology is Japanese Patent Application Laid-Open No. 60-179952.
No., JP-A-60-179953, JP-A-61-680
There are publications such as Publication No. 6. In these publications, Au x T
(3too-x * Ag x Te 5on-x(1
0≦X≦40 atomic %), etc. have been proposed.

しかしこれらの材料では、記録状態の安定性は得られる
が、記録に必要なエネルギーが大きいため、記録、消去
特性面で問題点が残った。
However, although these materials provide stability in the recording state, problems remain in terms of recording and erasing characteristics because the energy required for recording is large.

(発明が解決しようとする課題) 以上詳述したように従来のAg x Te +oo−x
(10≦X≦40)を材料として用いた情報記録媒体で
は、消去特性が悪い、記録に必要なエネルギーカミ大き
い等の欠点があった。
(Problem to be solved by the invention) As detailed above, the conventional Ag x Te +oo-x
Information recording media using (10≦X≦40) as materials have drawbacks such as poor erasing characteristics and large energy requirements for recording.

本発明では、上記欠点を解消し、記録、消去特性に優れ
た情報記録媒体を提供することを目的とする。
An object of the present invention is to eliminate the above-mentioned drawbacks and provide an information recording medium with excellent recording and erasing characteristics.

[発明の構成] (課題を解決するための手段と作用) 本発明の情報記録媒体は、記録層の平均組成が Mz  Te  1oo−x 但しMはAg、Au、Pd、Ptのうちから選ばれた金
属、Mで示される金属の合計含有量が0原子%<x<1
0原子%であることを特徴とする。
[Structure of the Invention] (Means and Effects for Solving the Problems) The information recording medium of the present invention has a recording layer having an average composition of Mz Te 1oo-x, where M is selected from Ag, Au, Pd, and Pt. The total content of metals represented by M is 0 atomic %<x<1
It is characterized by being 0 atomic %.

構成成分のうちTeなどのカルコゲン元素はMで示され
る金属と合金化する事により非晶質状態を安定に保持す
ることができる。Mで示される金属はTeと合金化する
事により優れた耐食性を示す。さらに上記のMで示され
る元素は結晶化の際の結晶核となる働きがあり高速での
結晶化が期待できる。
Among the constituent components, chalcogen elements such as Te can stably maintain an amorphous state by alloying with the metal represented by M. The metal represented by M exhibits excellent corrosion resistance when alloyed with Te. Furthermore, the element represented by M above serves as a crystal nucleus during crystallization, and high-speed crystallization can be expected.

またTeとMからなる合金はパルス光を吸収し非晶質か
ら結晶へ容易に変化し、その時の光学的性質(反射率、
透過率)の変化量が非常に大きい。
In addition, an alloy consisting of Te and M absorbs pulsed light and easily changes from amorphous to crystalline, resulting in optical properties (reflectance,
The amount of change in transmittance (transmittance) is very large.

但しMの組成範囲が10原子%を越えると充分な光学的
変化量が得られなく゛なってしまう。また、結晶状態、
非晶質状態間の相変化に必要なエネルギーもMの組成範
囲が10原子%を越えると大きくなってしまう。そのた
めMの組成範囲は10原子%未満としなければならない
However, if the composition range of M exceeds 10 atomic %, a sufficient amount of optical change cannot be obtained. Also, crystalline state,
The energy required for phase change between amorphous states also increases when the composition range of M exceeds 10 at %. Therefore, the composition range of M must be less than 10 atomic %.

本発明に用いられる情報記録媒体の構造を示す断面図は
第1図に示す通りである。
A sectional view showing the structure of the information recording medium used in the present invention is shown in FIG.

第1図中12はガラスやプラスチック材料(例えば、ポ
リメチルメタクリレート樹脂やポリカーボネート樹脂な
ど)からなる基板であり、この基板12上に光ビームの
照射により層変化を生じる記録層13が形成され、さら
に、この記録層13上に紫外線硬化樹脂等からなる有機
保護層14が形成されている。また、本発明で用いられ
る情報記録媒体は第2図及び第3図に示すような構造で
あってもよい。第2図では記録層13の経時変化を防ぐ
ために金属、半金属の酸化物、弗化物、硫化物、窒化物
等からなる無機物保護層15が記録層13を挟んだ・構
造となっており、第3図では、前記無機物保護層15を
形成する材料中に記録層13を形成する材料が分散した
複合層16を有する構造となっている。
Reference numeral 12 in FIG. 1 is a substrate made of glass or plastic material (for example, polymethyl methacrylate resin, polycarbonate resin, etc.).A recording layer 13 is formed on this substrate 12, which undergoes a layer change when irradiated with a light beam. An organic protective layer 14 made of ultraviolet curing resin or the like is formed on the recording layer 13. Furthermore, the information recording medium used in the present invention may have a structure as shown in FIGS. 2 and 3. In FIG. 2, in order to prevent the recording layer 13 from deteriorating over time, the recording layer 13 is sandwiched between an inorganic protective layer 15 made of metal or metalloid oxide, fluoride, sulfide, nitride, etc. In FIG. 3, the structure has a composite layer 16 in which the material forming the recording layer 13 is dispersed in the material forming the inorganic protective layer 15.

次に前記情報記録媒体の製造方法を第4図及び第5図に
沿って説明する。第4図は本発明に用いられる成膜装置
の側面図であり第5図は成膜装置の底面図である。
Next, a method for manufacturing the information recording medium will be explained with reference to FIGS. 4 and 5. FIG. 4 is a side view of the film forming apparatus used in the present invention, and FIG. 5 is a bottom view of the film forming apparatus.

真空容器17は排出ボート18を介して排気袋!!19
に接続されており、また、ガス導入ボート20を介して
アルゴンガスボンベ21に接続されている。真空容器1
7中上部には、支持装置22とこの支持装置に水平に支
架された基板12が設けられており、基板12は支持装
置22を軸に回転することができる。また、真空容器1
7中底部には、基板12に対面してスパッタ源23.2
4が設けられており、これらスパッタ源には高周波電源
が接続されている。また、スパッタ源23゜24の上方
にはモニター装置25.26が設置されている。
The vacuum container 17 is an exhaust bag via the exhaust boat 18! ! 19
It is also connected to an argon gas cylinder 21 via a gas introduction boat 20. Vacuum container 1
A support device 22 and a substrate 12 horizontally supported by the support device are provided at the middle upper portion of the substrate 7, and the substrate 12 can rotate around the support device 22. Also, vacuum container 1
A sputtering source 23.2 is installed at the bottom of 7, facing the substrate 12.
4 are provided, and a high frequency power source is connected to these sputter sources. Additionally, monitor devices 25 and 26 are installed above the sputter sources 23 and 24.

この装置を用いて基板12に記録層を成膜する場合には
、まず排気装置19により容器内の空気を排気し、続い
てアルゴンガスボンベ21よりアルゴンガスを導入して
容器内を所定の圧力に保持する。そして基板12を回転
させつつ、スパッタ源23.24に所定時間電力を印加
する。モニタ装置25.26は各々スパッタ源からの元
素のスパッタ量をモニタし、このモニタした量が所定の
値になるように各スパッタ源に投入する電力を調節する
ようになっている。これにより基板121;記録層が形
成される。
When forming a recording layer on the substrate 12 using this apparatus, first the air in the container is exhausted by the exhaust device 19, and then argon gas is introduced from the argon gas cylinder 21 to bring the inside of the container to a predetermined pressure. Hold. Then, while rotating the substrate 12, power is applied to the sputtering sources 23 and 24 for a predetermined period of time. The monitor devices 25 and 26 are adapted to monitor the amount of element sputtered from each sputtering source, and adjust the power applied to each sputtering source so that the monitored amount becomes a predetermined value. As a result, a substrate 121; a recording layer is formed.

(実施例) 一実験1− 本実験では多元同時スパッタ法により記録膜を形成した
(Example) Experiment 1 - In this experiment, a recording film was formed by a multi-source simultaneous sputtering method.

真空容器内に所望の金属とTeのスパッタ源を設け、容
器内を5 X 10−’Torrまで排気した。次にA
rガスを導入し5 X 10−’Torrに全体の圧力
を調節した。基板として充分洗浄した外径130 mm
、板厚1.21の円板状カーボネート基板を用い、この
基板を6 Orpmで回転しつつモニタにより各元素の
スパッタ量をモニタして各スパッタ源に投入する電力を
制御し、全体の膜厚が1000人になるまで各元素を堆
積させて記録層を成膜した。
Sputtering sources for desired metals and Te were provided in a vacuum container, and the inside of the container was evacuated to 5×10-' Torr. Next A
r gas was introduced and the overall pressure was adjusted to 5 x 10-' Torr. Outer diameter 130 mm, thoroughly cleaned as a substrate
Using a disk-shaped carbonate substrate with a thickness of 1.21 mm, the amount of sputtering of each element was monitored while rotating the substrate at 6 Orpm, and the power input to each sputtering source was controlled to determine the overall film thickness. A recording layer was formed by depositing each element until the number of participants reached 1,000.

更にこの記録層上に有機保護層として紫外線硬化樹脂を
約10μmスピンコータによりオーバーコートし、紫外
線を照射して硬化させ所望する組成の情報記録媒体を形
成した。
Furthermore, an ultraviolet curable resin was overcoated as an organic protective layer on this recording layer to a thickness of about 10 μm using a spin coater, and was cured by irradiation with ultraviolet rays to form an information recording medium having a desired composition.

ここでは記録膜の光ビーム照射による原子配列の変化を
確認した。
Here, changes in the atomic arrangement of the recording film due to light beam irradiation were confirmed.

実験1においてスパッタ源にTeとAgを用い記録層組
成がAg s Te 95なる試料を形成した(未照射
部)。この試料にビーム径1μ露に絞った5mW15μ
sのパルス光を照射すると、照射部の反射率は変化した
(未記録部)。次に13+aW300nsのパルス光を
当てるとその照射部の反射率は元に戻ることが確認され
た(記録部)。次いでこの未記録部と記録部の結晶状態
を比較するため、透過型電子顕微鏡を用いて回折パター
ンを観察した。試料から保護層を剥離して記録層の状態
を回折パターンから観察したところ、レーザー光未照射
部では非晶質に特有のハローパターンが認められた。ま
た、レーザー光照射部のうち未記録部では結晶構造を示
す回折リングとスポットが観察され、記録部では、未照
射部に近い非晶質特有のハローパターンが認められた。
In Experiment 1, a sample with a recording layer composition of Ag s Te 95 was formed using Te and Ag as a sputtering source (unirradiated area). A 5mW 15μ beam focused to a beam diameter of 1μ was applied to this sample.
When irradiated with pulsed light of s, the reflectance of the irradiated area changed (unrecorded area). Next, when pulsed light of 13+aW of 300 ns was applied, it was confirmed that the reflectance of the irradiated area returned to its original value (recording area). Next, in order to compare the crystalline state of the unrecorded area and the recorded area, the diffraction pattern was observed using a transmission electron microscope. When the protective layer was peeled off from the sample and the state of the recording layer was observed from a diffraction pattern, a halo pattern characteristic of amorphous materials was observed in the areas not irradiated with laser light. Moreover, in the unrecorded part of the laser beam irradiated part, diffraction rings and spots indicating a crystal structure were observed, and in the recorded part, a halo pattern peculiar to an amorphous substance near the unirradiated part was observed.

他の組成の記録層についても同様の反射率変化1回折パ
ターンの変化が観察された。
Similar changes in reflectance changes and diffraction patterns were observed for recording layers with other compositions.

一実験3− 本実験では記録状態の安定性について評価するため結晶
化温度を測定した。実験1に示したのと同様の方法でス
パッタ源としてTeとAuを用いて記録層組成がAu 
X Te t。o−xにおいてTeにAuを0.6,1
5.20原子%添加させた試料を作成した。これらの試
料を示差走査熱量計(D S C)により熱分析した(
第6図)。Allを添加するとTeのみの記録膜に比べ
て結晶化温度が高く非晶質状態が安定であることがわか
る。更にAuの代わりにPtPd、Agを添加した場合
でも同様の効果が得られた。
Experiment 3 - In this experiment, the crystallization temperature was measured in order to evaluate the stability of the recording state. Using the same method as shown in Experiment 1, using Te and Au as sputtering sources, the recording layer composition was made to be Au.
XTet. 0.6,1 Au to Te in ox
A sample was prepared in which 5.20 atomic % was added. These samples were thermally analyzed by differential scanning calorimetry (DSC) (
Figure 6). It can be seen that when Al is added, the crystallization temperature is higher and the amorphous state is stable compared to a recording film containing only Te. Furthermore, similar effects were obtained when PtPd and Ag were added instead of Au.

一実験4− ここでは記録状態の安定性を反射率の経時変化され評価
した。
Experiment 4--Here, the stability of the recording state was evaluated based on changes in reflectance over time.

実験1に示した方法により記録層の組成がTeとAu 
g Te 92の2種の試料を作成した。これらの試料
を65℃、90%RHの環境に500時間暴露し、その
ときの初期反射率(R1)と経時反射率(Rt )との
比(Rt /R1)を暴露時間に5対してプロットした
(第7図)。
By the method shown in Experiment 1, the composition of the recording layer was changed to Te and Au.
Two types of samples of g Te 92 were prepared. These samples were exposed to an environment of 65°C and 90% RH for 500 hours, and the ratio (Rt/R1) of the initial reflectance (R1) to the reflectance over time (Rt) was plotted against the exposure time of 5. (Figure 7).

図かられかるようにTe組成の試料では反射率が次第に
低下するが、”reにAuを添加した試料では経時反射
率は初期反射率とほとんど変らず、安定であった。
As can be seen from the figure, the reflectance of the sample with Te composition gradually decreases, but the reflectance of the sample with Au added to ``re'' remained stable over time, almost unchanged from the initial reflectance.

さらにAuの代わりにPt、Pd、Agを添加した場合
にも同様の効果が得られた。
Furthermore, similar effects were obtained when Pt, Pd, and Ag were added instead of Au.

−実験5− 本実験では記録部の消去特性について評価した。記録層
組成がPd 、 ’re 、o。−、においてTej、
: P dを6.9,15.30原子%の割合で添加し
た試料を作成した。
-Experiment 5- In this experiment, the erasing characteristics of the recorded portion were evaluated. The recording layer composition is Pd, 're, o. -, in Tej,
: Samples were prepared in which Pd was added at a ratio of 6.9 and 15.30 atomic %.

この試料に反射率が一定になるまで5mW5μsのパル
ス光を当て記録層を結晶化させた。第8図にPdの添加
量に対して反射率が一定になるまでのパルス光照射回数
をプロットした。Pdの添加量が10原子%以上になる
と照射回数も多く必要であることがわかった。
The recording layer was crystallized by applying pulsed light of 5 mW and 5 μs to this sample until the reflectance became constant. In FIG. 8, the number of pulsed light irradiations until the reflectance becomes constant is plotted against the amount of Pd added. It has been found that when the amount of Pd added is 10 atomic % or more, the number of irradiations is required to be increased.

この結果からPdの添加量は10原子96未満であるこ
とが望ましい。
From this result, it is desirable that the amount of Pd added is less than 10 atoms and 96 atoms.

更にPdの代わりにAu Pt 、Agを添加した場合
でも同様の効果を得ることができる。
Further, similar effects can be obtained even when Au Pt or Ag is added instead of Pd.

−実験6− 本実験では実用的な試験装置を用いて試験を行なった。-Experiment 6- In this experiment, we used a practical test device.

第9図は試験に用いた装置の概略図である。試料31は
スピンドルモータ32上に固定され、回転することがで
きる。試料31上にはこの試料31に対して垂直な方向
に上から順に半導体レーザ源34.コリメータレンズ3
5.ビームスプリッタ36.λ/4板37.対物レンズ
38が一直線上に配置されている。また、対物レンズ3
8の両端には駆動コイル41が設置されている。
FIG. 9 is a schematic diagram of the apparatus used in the test. The sample 31 is fixed on a spindle motor 32 and can be rotated. On the sample 31, semiconductor laser sources 34. Collimator lens 3
5. Beam splitter 36. λ/4 plate 37. The objective lens 38 is arranged in a straight line. Also, objective lens 3
A drive coil 41 is installed at both ends of the coil 8.

更゛にビームスプリッタ36により試料31と平行な方
向に検出レンズ39.受光器40が設置され、対物レン
ズより試料31と平行な方向で受光器40の垂直下方に
サーボ系42が設置されている。
Furthermore, the beam splitter 36 causes a detection lens 39. A light receiver 40 is installed, and a servo system 42 is installed vertically below the light receiver 40 in a direction parallel to the sample 31 from the objective lens.

半導体レーザー源34より出た光はコリメータレンズ3
5を通過して平行光となる。続いて光はビームスプリッ
タ36を透過しλ/4板37を通過し、対物レンズ38
により試料31上に集光される。試料31から反射した
光はλ/4板37を通過し、ビームスプリッタ36で反
射される。この反射された光は検出レンズ39により集
光され、受光器40に入って検出信号となる。更に検出
信号は、サーボ系42を通って電流に変えられ、駆動コ
イル41に流れこの電流により対物レンズが駆動され、
試料31上の情報を記録した溝(案内溝)上に正確に集
光される。
The light emitted from the semiconductor laser source 34 passes through the collimator lens 3
5 and becomes parallel light. Next, the light passes through the beam splitter 36, passes through the λ/4 plate 37, and passes through the objective lens 38.
The light is focused onto the sample 31. The light reflected from the sample 31 passes through the λ/4 plate 37 and is reflected by the beam splitter 36. This reflected light is collected by the detection lens 39, enters the light receiver 40, and becomes a detection signal. Furthermore, the detection signal is converted into a current through the servo system 42, which flows through the drive coil 41, and this current drives the objective lens.
The light is accurately focused on the groove (guide groove) on the sample 31 in which information is recorded.

実験1に示した方法を用い、記録層の両側を5102(
膜厚1000X)で挾んだ媒体試料を作成し、前述の装
置に実装して実験を行なった。記録層組成はPd z 
Te Zoo−XにおいてTeEPdを5.11.18
原子%と添加させた。この試料をスピンドルモータに固
定し700 rpmで回転させた。この状態で試料上に
6i+Wの連続光を反射率が一定になるまで照射した(
結晶状8)。第10図はPdの添加量を変えた試料にお
いて、反射率が元の値に戻るのに必要な最低のエネルギ
ーをプロットにしたものである。Pdの添加量が10原
子%以上だと記録に必要なエネルギーが高くなることが
わかった。以上の実験結果からPdの添加量は10%未
満が望ましいといえる。更にPdの代わりにAu、Ag
、Ptを添加した場合についても同様のり果が得られた
Using the method shown in Experiment 1, both sides of the recording layer were coated with 5102 (
A media sample sandwiched with a film thickness of 1000×) was prepared, and an experiment was conducted by mounting it in the above-mentioned apparatus. The recording layer composition is Pdz
Te EPd at Te Zoo-X 5.11.18
It was added in an amount of atomic percent. This sample was fixed to a spindle motor and rotated at 700 rpm. In this state, continuous light of 6i+W was irradiated onto the sample until the reflectance became constant (
Crystalline 8). FIG. 10 is a plot of the minimum energy required for the reflectance to return to its original value in samples with different amounts of Pd added. It has been found that when the amount of Pd added is 10 atomic % or more, the energy required for recording increases. From the above experimental results, it can be said that the amount of Pd added is preferably less than 10%. Furthermore, Au, Ag instead of Pd
, Similar paste results were obtained when Pt was added.

一実験7− 本実験では再生信号量について試験した。実験1と同様
の方法で記録層の組成がAu X Te 、。
Experiment 7 - In this experiment, the amount of reproduced signal was tested. The composition of the recording layer was set to Au x Te in the same manner as in Experiment 1.

o−xにおいてTeにAuを0.5,11.18原子%
と添加させ試料を形成した。
0.5, 11.18 atomic% Au to Te in ox
was added to form a sample.

この試料を実験6に示した装置にセットし回転数を90
 Orpmで回転させた。更にこの上から5■W15μ
sのパルス光を照射し、反射率の変化量を測定した。第
11図に変化量を初期値で割った値(コントラスト比)
とAu添加量とをプロットした。Auを添加することに
より、コントラスト比が増加することが判る。更にAu
の代わりにPt、Pd、Agを添加した場合でも同様の
効果が得られる。以上の結果により、TeにAg、Au
、Pt、Pdを添加することにより結晶状態が安定で、
光学的変化量も大きい記録膜が得られる。
This sample was set in the apparatus shown in Experiment 6, and the rotation speed was set to 90.
It was rotated with Orpm. Furthermore, from above this 5■W15μ
s pulsed light was irradiated, and the amount of change in reflectance was measured. Figure 11 shows the value obtained by dividing the amount of change by the initial value (contrast ratio)
and the amount of Au added were plotted. It can be seen that the contrast ratio increases by adding Au. Furthermore, Au
Similar effects can be obtained even when Pt, Pd, or Ag is added instead. Based on the above results, Te has Ag, Au
By adding , Pt, and Pd, the crystal state is stable,
A recording film with a large amount of optical change can be obtained.

更に記録、消去の特性から考慮すると前記のAg。Furthermore, considering the recording and erasing characteristics, the above-mentioned Ag.

Au、PL、Pdの添加量は10原子%未満が適当であ
る。
The amount of Au, PL, and Pd added is suitably less than 10 atomic %.

[発明の効果] 以上詳述したように本発明によれば記録、消去の特性が
よく、記録状態が安定で、再生信号量も比較的大きい、
充分実用に耐えうる情報記録媒体を提供できる。
[Effects of the Invention] As detailed above, according to the present invention, the recording and erasing characteristics are good, the recording state is stable, and the amount of reproduced signal is relatively large.
It is possible to provide an information recording medium that is sufficiently practical.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図乃至第3図は本発明で用いられる情報記録媒体の
層構造を示す断面図、第4図は成膜装置の側面図、第5
図は成膜装置の底面図、第6図はAu添加量と結晶化温
度を示すグラフ、第7図は暴露時間と反射率比を示すグ
ラフ、第8図はPd添加量と照射回数を示すグラフ、第
9図は、実用的記録装置の概略図、第10図はPd添加
量と記録エネルギーを示すグラフ、第11図はAu添加
量とコントラスト比を示すグラフである。 12・・・基板 13・・・記録層
1 to 3 are cross-sectional views showing the layer structure of the information recording medium used in the present invention, FIG. 4 is a side view of the film forming apparatus, and FIG.
The figure is a bottom view of the film forming apparatus, Figure 6 is a graph showing the amount of Au added and crystallization temperature, Figure 7 is a graph showing the exposure time and reflectance ratio, and Figure 8 is the graph showing the amount of Pd added and the number of irradiations. 9 is a schematic diagram of a practical recording device, FIG. 10 is a graph showing the amount of Pd added and recording energy, and FIG. 11 is a graph showing the amount of Au added and contrast ratio. 12...Substrate 13...Recording layer

Claims (1)

【特許請求の範囲】 光ビームの照射により原子配列の変化を生じさせること
により、情報が記録、消去される記録層を有する情報記
録媒体において、前記記録層の平均組成が MxTe_1_0_0_−_x 但しMはAg、Au、Pd、Ptのうちから選ばれた金
属 0原子%<x<10原子% であることを特徴とする情報記録媒体。
[Claims] An information recording medium having a recording layer in which information is recorded and erased by causing a change in atomic arrangement by irradiation with a light beam, wherein the average composition of the recording layer is MxTe_1_0_0_-_x, where M is An information recording medium characterized in that 0 atomic %<x<10 atomic % of a metal selected from Ag, Au, Pd, and Pt.
JP63022041A 1988-02-03 1988-02-03 Information recording medium Pending JPH01199333A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63022041A JPH01199333A (en) 1988-02-03 1988-02-03 Information recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63022041A JPH01199333A (en) 1988-02-03 1988-02-03 Information recording medium

Publications (1)

Publication Number Publication Date
JPH01199333A true JPH01199333A (en) 1989-08-10

Family

ID=12071855

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63022041A Pending JPH01199333A (en) 1988-02-03 1988-02-03 Information recording medium

Country Status (1)

Country Link
JP (1) JPH01199333A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01303645A (en) * 1988-05-31 1989-12-07 Matsushita Electric Ind Co Ltd Optical recording carrier and its production

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01303645A (en) * 1988-05-31 1989-12-07 Matsushita Electric Ind Co Ltd Optical recording carrier and its production

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