JPH01246911A - Piezoelectric thin-film resonator - Google Patents
Piezoelectric thin-film resonatorInfo
- Publication number
- JPH01246911A JPH01246911A JP7330888A JP7330888A JPH01246911A JP H01246911 A JPH01246911 A JP H01246911A JP 7330888 A JP7330888 A JP 7330888A JP 7330888 A JP7330888 A JP 7330888A JP H01246911 A JPH01246911 A JP H01246911A
- Authority
- JP
- Japan
- Prior art keywords
- film
- piezoelectric thin
- electrode
- upper electrode
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 239000010408 film Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims description 9
- 239000011800 void material Substances 0.000 claims description 8
- 238000005530 etching Methods 0.000 abstract description 4
- 229910003781 PbTiO3 Inorganic materials 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 239000003795 chemical substances by application Substances 0.000 abstract description 2
- 239000002131 composite material Substances 0.000 abstract description 2
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000126 substance Substances 0.000 abstract 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910017083 AlN Inorganic materials 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は圧１！薄膜を撮動膜に用いた共振子に係り、特
にｖｌ（Ｆ帯およびＭ上用として好適な圧電薄膜共振子
ｆこ関する。[Detailed Description of the Invention] [Object of the Invention] (Field of Industrial Application) The present invention is based on pressure 1! The present invention relates to a resonator using a thin film as an imaging film, and particularly relates to a piezoelectric thin film resonator f suitable for Vl (F band and M band).
（従来の技術）
ＶＨＦ帝、ＴＪＨＦ’帯といった高い周波数帯で使用で
き、しかも集積化に適した共振子として、圧電薄膜共振
子が注目されている。これは圧電薄膜を振動膜ｌご用い
たものである。(Prior Art) Piezoelectric thin film resonators are attracting attention as resonators that can be used in high frequency bands such as the VHF and TJHF' bands and are suitable for integration. This uses a piezoelectric thin film as a vibrating membrane.
特開昭６０−１８９３０７号及び％開昭６１−１２７２
１６号公報ｔこは、このよりな圧電薄膜の例として、第
３図（ａｔ 、 （ｂＪに示すような基板１上に該基板
との間に一部が開口した空隙層２を有するよう−こ形成
された第１の誘電体Ｍ３を介して、空隙層２に対応する
位置に圧電性薄膜４を形成し、この圧電性薄膜４を挾ん
で空隙層２に対応する位置で互いに対向する一対の下部
電極５及び上部電極６のその上（こ第２の誘電体膜７を
設けた構成の共撮器か記載されている。JP-A-60-189307 and %-A-61-1272
As an example of this thin piezoelectric film, Publication No. 16 discloses a structure having a gap layer 2 with a partially opened space on a substrate 1 as shown in FIGS. A piezoelectric thin film 4 is formed at a position corresponding to the void layer 2 via the first dielectric M3 thus formed, and a pair of piezoelectric thin films 4 are formed opposite to each other at a position corresponding to the void layer 2 with the piezoelectric thin film 4 in between. A co-photographer is described in which a second dielectric film 7 is provided above the lower electrode 5 and the upper electrode 6.
この場合、下部電極パッド及び上部電極パッド９に電気
信号を印加することによって、空隙層に対向した部分の
誘電体膜３，７と圧電性薄膜４との複合撮動膜が振動し
、共振器として動作する。In this case, by applying an electric signal to the lower electrode pad and the upper electrode pad 9, the composite film of the dielectric films 3 and 7 and the piezoelectric thin film 4 in the portion facing the gap layer vibrates, and the resonator It works as.
ところで、かかる圧電薄膜共振子の電極としては、Ａｕ
／Ｔｉ又はＡｕ／Ｃｒなどの２層金属膜が用いられるが
、圧電薄膜としてＺｎＯ膜を使用する場合には、下部電
極５および上部電極６とも以下の理由からＡｕ層がＺｎ
Ｏ圧電薄膜に接するように形成されることが好ましい。By the way, the electrodes of such a piezoelectric thin film resonator are made of Au.
A two-layer metal film such as /Ti or Au/Cr is used, but when using a ZnO film as the piezoelectric thin film, the Au layer is Zn for both the lower electrode 5 and the upper electrode 6 for the following reasons.
It is preferable that it be formed so as to be in contact with the O piezoelectric thin film.
下部電極５においては下層に誘電体膜３との接着強度を
高めるためにＴｉ又はＣｒとし、ＺｎＯ圧電薄膜４に接
する側をＡｕとするのはＺｎＯ膜の配向性を良くし圧電
性を高めるためである。In the lower electrode 5, the lower layer is made of Ti or Cr to increase the adhesive strength with the dielectric film 3, and the side in contact with the ZnO piezoelectric thin film 4 is made of Au in order to improve the orientation of the ZnO film and enhance piezoelectricity. It is.
上部電極６においては、ＺｎＯ膜上にＣｒ ｅ Ｔｉを
付けるとこれらの金属は高い親和性を示すため、ＺｎＯ
膜中に拡散し、本来ｌＯ９〜１０１°Ω・倒を示すＺｎ
Ｏ膜の比抵抗が、はぼ短絡状態から１０５０・国と著し
く劣化し素子の電気的特性がそこなわれてしまう。特に
、この上部電極上に５ｉＯＪＥなどの誘電体膜７にてパ
ターン形成により積層すると、ＺｎＯ膜の比抵抗は顕微
に劣化する。しかるにＺｏＯ圧電薄膜に接する層の金属
にＡｕをその上に酸化物を密着性の良いＣｒ又はＴｉと
すると、ＺｎＯ圧電薄膜の比抵抗の劣化がなく安定した
電気的特性が得られるためである。尚ｓ ＺｎＯ圧電薄
膜に接する金属としてはＡｕ ３１ｉ層のみでも良いし
、Ａｕ上にｐｔ又はＰｄをさらにその上にＣｒ又はＴｉ
を積層した３層金属膜においても安定した電気的特性が
得られる。In the upper electrode 6, when Cr e Ti is attached on the ZnO film, these metals show high affinity.
Zn diffuses into the film and exhibits an original lO9 to 101°Ω
The specific resistance of the O film significantly deteriorates from a short-circuited state to 1050°, and the electrical characteristics of the device are impaired. Particularly, when a dielectric film 7 such as 5iOJE is laminated by patterning on this upper electrode, the specific resistance of the ZnO film deteriorates minutely. However, if Au is used as the metal layer in contact with the ZnO piezoelectric thin film, and Cr or Ti, which has good adhesion, is used as an oxide on top of it, the specific resistance of the ZnO piezoelectric thin film will not deteriorate and stable electrical characteristics will be obtained. The metal in contact with the ZnO piezoelectric thin film may be only an Au 31i layer, or PT or Pd on Au and Cr or Ti on top.
Stable electrical characteristics can also be obtained in a three-layer metal film formed by stacking the above.
しかし、前記電極構成には次のような欠点があった。つ
まり、この共振子を動作するためには下部ｔｍパッド８
と上部電極パッド９にＡｕ又はＡＪの細線を用いてボン
ディングが行なわれるが、この際、上部電極パッド９側
ではＺｎＯ膜とＡｕとは密沼力が極端に弱いためこの界
面で剥離してしまいボンディングができないという素子
作製上の大きな問題があった。また、ウェハー状態で電
気的特性を評価するためにプローバー等の針を接触した
場合においても、前記ボンディング時と同様にＡｕ電極
の一部が剥離してしまうという問題があった。However, the electrode structure has the following drawbacks. In other words, in order to operate this resonator, the lower tm pad 8
Bonding is performed using a fine wire of Au or AJ to the upper electrode pad 9, but at this time, the ZnO film and Au have an extremely weak bonding force on the upper electrode pad 9 side, so they separate at this interface. There was a major problem in device fabrication that bonding was not possible. Further, even when a needle of a prober or the like is brought into contact with the wafer in order to evaluate its electrical characteristics, there is a problem in that part of the Au electrode peels off, similar to the bonding process described above.
（発明が解決しようとする課題）
この発明は上記問題点を解決するために成されたもので
、ボンディング及びプローバ使用時においても電極の剥
離等の損傷がない安定で高信頼性の圧電薄膜共振子を提
供するものである。(Problems to be Solved by the Invention) This invention has been made to solve the above problems, and provides stable and highly reliable piezoelectric thin film resonance that does not cause damage such as electrode peeling even when bonding or using a prober. It is something that provides children.
（課題を触法するための手段）
この発明の圧電薄膜共振子は、ＺｎＯ圧電薄膜上にＡｕ
層が接するように形成された電極と、この電極を含むＺ
ｎＯ圧電薄膜上に誘電体膜を積層し、電極上の誘電体膜
の一部を開口して設けたコンタクトホールと、このコン
タクトホールな介して誘電体膜上に電極パッドを設けた
ことを特徴としている。(Means for solving the problem) The piezoelectric thin film resonator of the present invention has Au on a ZnO piezoelectric thin film.
An electrode formed so that the layers are in contact with each other, and a Z including this electrode.
A dielectric film is laminated on an nO piezoelectric thin film, a contact hole is formed by opening a part of the dielectric film on the electrode, and an electrode pad is provided on the dielectric film through this contact hole. It is said that
（作用）
本発明に係る圧電薄膜共振子では、ＺｎＯ膜と接するＡ
ｕ電極層と、これと分離して誘電体膜上に電極パッドを
形成することにより、ＺｎＯ膜には適さないＡ Ｉ？＊
７８＋ Ｃｒといった密着性の強い電極材料が使える
ため、ボンディングやプローバー使用時ニおける電極の
剥離や損傷の問題がなくなり、高信頼で歩留りの良い素
子作製が可能となる。(Function) In the piezoelectric thin film resonator according to the present invention, the A
By forming the u-electrode layer and the electrode pads on the dielectric film separately from this, AI? *
Since electrode materials with strong adhesion such as 78+ Cr can be used, there is no problem of electrode peeling or damage during bonding or when using a prober, making it possible to manufacture devices with high reliability and high yield.
（実施例）
以下、図面を参照してこの発明の詳細な説明する。第１
図（ａＪは同実施例の平面図、同図（ｂＪは（１７図の
Ａ−Ａ’線部分において矢印の方向にみた縦断正面図で
ある。(Example) Hereinafter, the present invention will be described in detail with reference to the drawings. 1st
Figure (aJ is a plan view of the same embodiment, Figure (bJ is a longitudinal sectional front view taken along the line AA' in Figure 17 in the direction of the arrow).
この実施例の構造およびそのｈ裏方法は、以下のとおり
である。１０は例えばＳｔ等の基板であり、その上に空
隙形成用膜として例えば、非晶質のＺｎＯ膜などを０．
１μｍ程度成膜した後に空隙層部１１に相当す暮部分を
残してエツチングにより除去し、パターン化する。次に
第１の誘電体膜１２として８１０ｓ ｅ’８１３ Ｎ４
などを成膜する。その後、下部電極１３．圧電性薄膜
１４．上部−極１５．第２の誘電体膜１６を順次成膜、
パターン形成していく。The structure and method behind this example are as follows. 10 is a substrate made of, for example, St, on which, for example, an amorphous ZnO film or the like is coated as a film for forming voids.
After forming a film of about 1 μm, it is removed by etching, leaving a dark portion corresponding to the void layer portion 11, and patterned. Next, as the first dielectric film 12, 810s e'813 N4
etc. are formed into a film. After that, the lower electrode 13. Piezoelectric thin film 14. Top-pole 15. Sequentially forming a second dielectric film 16,
Forming a pattern.
下部電極１３としてはＡｕ／Ｔｉ 、Ａｕ／Ｃｒが望ま
しく、上部電極１５としては圧電薄１Ｍ１４に対して安
定なＡｕ膜、またはＡｕ膜上にＰｔ 、 Ｐｄ特の拡散
バリア層（！： Ｔｔ ＃ Ｃｒ等のコンタクト層を入
れた３層重いづれにしても、圧電薄膜の比抵抗を劣化さ
せないためには圧電薄膜とＡｕとが接するようにしなけ
ればならない。圧電導膜としては、 ＺｎＯ、ＡＩＮ。The lower electrode 13 is preferably made of Au/Ti or Au/Cr, and the upper electrode 15 is made of an Au film that is stable against the piezoelectric thin 1M14, or a diffusion barrier layer (!: Tt # Cr) of Pt or Pd on the Au film. Even if the piezoelectric thin film and Au are in contact with each other, the piezoelectric thin film must be in contact with Au in order to prevent the specific resistance of the piezoelectric thin film from deteriorating even if it is made up of three layers including contact layers such as ZnO, AIN, etc.
Ｔａ２０５ ＋ＰｂＴｉＯ３等を用いることが可能であ
り、第２の誘電体膜１６はＳｉｎｇ ＋Ｓｉ３Ｎ４等を
用いることができ、第１の誘電体膜１２とともに、圧電
性薄膜１４、下部電極１３．上部電極１５の保護膜とし
て信頼性を高める役割を果たすと同時に、振動部分では
圧電性導膜１４の上下を誘電体膜１２．１６で挾んだ３
／Ｉ構造の袂合賑動子として動作する。その後、誘電体
膜１６の一部をエツチングして下部電極パッド部１７を
形成し、同時に振動部分以外の上部電極１５上の一部に
コンタクトホール１８を形成する。この場合、上部電極
１５としてＡｕ膜のみを用いるとＡｕ膜はエツチング剤
に強く、全く侵かされないため、コンタクトホール１８
が精度良くできるという利点がある。It is possible to use Ta205 +PbTiO3, etc., and Sing +Si3N4, etc. can be used for the second dielectric film 16, and together with the first dielectric film 12, the piezoelectric thin film 14, the lower electrode 13. At the same time as serving as a protective film for the upper electrode 15 to improve reliability, the piezoelectric conductive film 14 is sandwiched between upper and lower parts by dielectric films 12 and 16 in the vibrating part.
It operates as a nuisance element of the /I structure. Thereafter, a portion of the dielectric film 16 is etched to form a lower electrode pad portion 17, and at the same time a contact hole 18 is formed in a portion of the upper electrode 15 other than the vibrating portion. In this case, if only the Au film is used as the upper electrode 15, the Au film is resistant to etching agents and will not be attacked at all.
It has the advantage that it can be done with high precision.
一次にコンタクトホール１８を埋め込むと同時に誘電体
膜１６上に金属を臭突蒸着またはスパッタ法により成膜
し、上部電極パッド１９を形成する。First, while filling the contact hole 18, a metal film is formed on the dielectric film 16 by vapor deposition or sputtering to form an upper electrode pad 19.
この金属としては密着性が良くポンディング性に優れ、
しかも安価で厚膜化の容易なＡＪｌが適している。This metal has good adhesion and excellent bonding properties.
Moreover, AJI is suitable because it is inexpensive and can be easily made thick.
最後に、窒隙層部１１を形成するために誘電体膜１２．
１６の一部（図では上下端部）をエツチングして空隙開
口部２０ａ 、 ２０ｂを形成し、その部分から希酸等
の溶液を浸透させを隙形成用膜をエツチングして空１！
ｉｉ層部１１を形成して完成する。Finally, in order to form the nitride gap layer 11, the dielectric film 12.
16 (the upper and lower ends in the figure) are etched to form void openings 20a and 20b, and a solution such as dilute acid is infiltrated through the etched portion to etch the void forming film to form the void 1!
The process is completed by forming the ii layer portion 11.
尚、上記第１図に示す実施例によれば従来例に比較して
上部電極パッドと基板との間に誘電体膜が介在するため
電極パッドと基板間の寄生容量が減少し、インピーダン
スレスポンスの低下や容量比の増加といった共撮子特性
の劣化を防止できる効果がある。In addition, according to the embodiment shown in FIG. 1, since a dielectric film is interposed between the upper electrode pad and the substrate compared to the conventional example, the parasitic capacitance between the electrode pad and the substrate is reduced, and the impedance response is improved. This has the effect of preventing deterioration of the characteristics of the co-photographer, such as a decrease in the capacity ratio or an increase in the capacitance ratio.
次に、本発明の他の実施例１こついて説明する。Next, another embodiment 1 of the present invention will be explained.
第２図は第１図とほぼ同様の構成で、誘電体膜２１及び
上部！、＠１パッド２ｚ上の一部にさらに、５ｉＯｚ等
の誘電体ｐＡ２３を積層した場合であり、さらに高信頼
化が計れるとともにこの膜厚を調整することにより周波
数の調整ができる効果がある。FIG. 2 has almost the same configuration as FIG. 1, including the dielectric film 21 and the upper part! This is a case where a dielectric material pA23 of 5 iOz or the like is further laminated on a part of the pad 2z, @1, which has the effect of further increasing reliability and adjusting the frequency by adjusting the thickness of this film.
第３図は圧電薄膜３０の面積を小さくして、上部電極パ
ッド３１と基板３２との１′＆ｒ１１こ圧電ＴＶ膜３０
が介在しないようにしたものである。つまり、第５図に
示す従来例と比較して、誘電率Ｅの大きい圧電性薄膜（
例えばＺｎＯ，ＡＩＮでは約８〜９． ｓ Ｔａ＊０５
では約２５）を介さないでＳｔｏｗ等の誘電率の小さい
（Ｅ中４）誘電体膜３３の上に上部電極パッド３１を設
けたことにより基板３２との間の寄生容量を減少できる
ため、インピーダンスレスポンスの低下や容量比の増加
といった共撮子特性の劣化を防止できる効果がある。In FIG. 3, the area of the piezoelectric thin film 30 is reduced, and the piezoelectric TV film 30 is
This is done so that there is no intervention. In other words, compared to the conventional example shown in FIG. 5, the piezoelectric thin film (
For example, for ZnO and AIN, it is about 8 to 9. sTa*05
By providing the upper electrode pad 31 on the dielectric film 33 with a small dielectric constant (4 in E) such as Stow without passing through a dielectric film 33 (approximately 25), the parasitic capacitance between the pad 31 and the substrate 32 can be reduced. This has the effect of preventing deterioration of the characteristics of the co-photographer, such as a decrease in response and an increase in the capacity ratio.
第４図は第３図とほぼ同様の構成で、誘電体膜４０及び
上部電極パッド４１上の一部にさらに、Ｓｉｎｇ等の誘
電体膜４２を積層した場合であり、さらに高信頼化が計
れるとともにこの膜厚を調整することにより周波数の調
整ができる効果がある。FIG. 4 shows a configuration similar to that in FIG. 3, in which a dielectric film 42 such as Sing is further laminated on a portion of the dielectric film 40 and the upper electrode pad 41, and even higher reliability can be achieved. In addition, by adjusting this film thickness, there is an effect that the frequency can be adjusted.
尚、本発明は上記した実施例に限定されるものではなく
、要旨を逸脱しない範囲で次のように種々変形して実施
することができる。It should be noted that the present invention is not limited to the embodiments described above, and can be implemented with various modifications as follows without departing from the scope of the invention.
例えば、共通の下部電極に対して複数の上部電極を直交
するように対向させ、各電極対向部間を弾性的結合が無
視できる程度に離すか、または各電極対向部間に溝や吸
音剤を設けることによって独立した複数の共撮子を有す
る多素子型共撮子を構成することも可能である。For example, a plurality of upper electrodes may be orthogonally opposed to a common lower electrode, and the opposing parts of each electrode may be separated to such an extent that elastic coupling can be ignored, or grooves or sound absorbing material may be placed between each opposing part of the electrodes. By providing this, it is also possible to configure a multi-element type co-photographer having a plurality of independent co-photographers.
また、共通の下部電極に対して複数の上部電極を対向さ
せ、各電極対向部間の弾性的結合を利用した帯域フィル
タを構成することもできる。Furthermore, a bandpass filter can be configured by making a plurality of upper electrodes face a common lower electrode and utilizing elastic coupling between the electrode facing parts.
本発明によれば、圧′亀薄膜と接するＡｕ上部電極層と
これと分離して誘電体膜上に上部電極パッドを設けたこ
とにより、ボンディングやプローバ使用時における電極
の剥離や損傷の問題がなくなり高信頼で歩留りの良い菓
子作製が可能となった。According to the present invention, by providing the Au upper electrode layer in contact with the piezoelectric thin film and the upper electrode pad on the dielectric film separately from this, the problem of electrode peeling and damage during bonding or when using a prober is eliminated. This has made it possible to produce confectionery with high reliability and high yield.
さらに、電極パッドと基板間の寄生容量を減少すること
ができるため、インピーダンスレスポンスの低下や容量
比の増加といった共撫子特性の劣化を防止できる。Furthermore, since the parasitic capacitance between the electrode pad and the substrate can be reduced, it is possible to prevent deterioration of the resonance characteristics such as a decrease in impedance response and an increase in the capacitance ratio.
断面図、第２図〜第４図は本発明の他の実施例における
縦断面図、第５図は従来の圧電薄膜共振子を示す平面図
および縦断面図である。2 to 4 are longitudinal sectional views of other embodiments of the present invention, and FIG. 5 is a plan view and a longitudinal sectional view of a conventional piezoelectric thin film resonator.
１０・・・基板、１１・・・空隙層部、１２・・・第１
の誘電体膜、１３・・・下部電極、１４・・・圧電薄膜
、１５・・・上部電極、１６・・・第２の誘電体膜、１
７・・・下部を極パッド、１８・・、コンタクトホール
、１９・・・上部電極パッド、２０ａ、２０ｂ・・・窒
隙開口部。DESCRIPTION OF SYMBOLS 10... Substrate, 11... Gap layer part, 12... First
13... Lower electrode, 14... Piezoelectric thin film, 15... Upper electrode, 16... Second dielectric film, 1
7... Bottom is pole pad, 18... Contact hole, 19... Upper electrode pad, 20a, 20b... Nitrogen gap opening.
Claims (1)
隙層を有するよりに形成された第１の誘電体膜と、この
誘電体膜上の前記空隙層を含む位置に形成された圧電薄
膜と、この圧電薄膜を挾んで少なくとも前記空隙層に対
応する位置で互いに対向するように形成された少なくと
も一対の上下電極とを備え、さらに第２の誘電体膜が積
層されてなる圧電薄膜共振子において、前記圧電薄膜上
にＡｕ層が接するように形成された上部電極と、前記第
２の誘電体膜の一部を開口した接続孔を介して、この誘
電体膜上に上部電極パッドを設けてなることを特徴とす
る圧電薄膜共振子。a first dielectric film formed on the substrate and having a partially opened void layer between the substrate; and a first dielectric film formed on the dielectric film at a position including the void layer. a piezoelectric thin film; and at least a pair of upper and lower electrodes formed to face each other at least at a position corresponding to the gap layer, sandwiching the piezoelectric thin film, and further laminated with a second dielectric film. In the thin film resonator, an upper electrode is formed on the piezoelectric thin film so that the Au layer is in contact with the upper electrode, and an upper electrode is formed on the dielectric film through a connection hole that is partially opened in the second dielectric film. A piezoelectric thin film resonator characterized by being provided with a pad.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7330888A JPH01246911A (en) | 1988-03-29 | 1988-03-29 | Piezoelectric thin-film resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7330888A JPH01246911A (en) | 1988-03-29 | 1988-03-29 | Piezoelectric thin-film resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01246911A true JPH01246911A (en) | 1989-10-02 |
Family
ID=13514408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7330888A Pending JPH01246911A (en) | 1988-03-29 | 1988-03-29 | Piezoelectric thin-film resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01246911A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002521890A (en) * | 1998-07-23 | 2002-07-16 | イギリス国 | Method of manufacturing a capacitive ultrasonic transducer |
| US7310861B2 (en) | 2001-09-25 | 2007-12-25 | Infineon Technologies Ag | Method of producing a piezoelectric component |
| JP2008011483A (en) * | 2006-05-30 | 2008-01-17 | Kyocera Corp | Acoustic wave resonator, filter, and communication equipment |
| JP2009508340A (en) * | 2005-09-16 | 2009-02-26 | エプコス アクチエンゲゼルシャフト | Adjustable capacitor and circuit with adjustable capacitor |
-
1988
- 1988-03-29 JP JP7330888A patent/JPH01246911A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002521890A (en) * | 1998-07-23 | 2002-07-16 | イギリス国 | Method of manufacturing a capacitive ultrasonic transducer |
| US7310861B2 (en) | 2001-09-25 | 2007-12-25 | Infineon Technologies Ag | Method of producing a piezoelectric component |
| JP2009508340A (en) * | 2005-09-16 | 2009-02-26 | エプコス アクチエンゲゼルシャフト | Adjustable capacitor and circuit with adjustable capacitor |
| JP2008011483A (en) * | 2006-05-30 | 2008-01-17 | Kyocera Corp | Acoustic wave resonator, filter, and communication equipment |
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