JPH01243570A - High-resistance element - Google Patents
High-resistance elementInfo
- Publication number
- JPH01243570A JPH01243570A JP7128588A JP7128588A JPH01243570A JP H01243570 A JPH01243570 A JP H01243570A JP 7128588 A JP7128588 A JP 7128588A JP 7128588 A JP7128588 A JP 7128588A JP H01243570 A JPH01243570 A JP H01243570A
- Authority
- JP
- Japan
- Prior art keywords
- film
- psg film
- resistance element
- resistor
- part electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011574 phosphorus Substances 0.000 claims abstract description 4
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 239000010409 thin film Substances 0.000 claims abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052810 boron oxide Inorganic materials 0.000 claims description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- 239000010408 film Substances 0.000 abstract description 25
- 238000000034 method Methods 0.000 abstract description 5
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052796 boron Inorganic materials 0.000 abstract description 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 101000617728 Homo sapiens Pregnancy-specific beta-1-glycoprotein 9 Proteins 0.000 description 2
- 102100021983 Pregnancy-specific beta-1-glycoprotein 9 Human genes 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
〔産業上の利用分野１
本発明は半導体集積回路内で用いられる高抵抗素子に関
する。
〔発明の概要］
本発明は、従来半導体集積回路内で絶縁体として用いら
れていた。シリコン酸化物とリンあるいはボロンの酸化
物との混合物薄膜−以下、リンガラス膜（ＰＳＧＩＩ）
あるいはボロンガラス膜（ＢＳＧ膜）−の、混合比率を
制御することにより、所望の抵抗の抵抗体として用いる
事を特徴としている。[Industrial Application Field 1] The present invention relates to a high resistance element used in a semiconductor integrated circuit. [Summary of the Invention] The present invention has conventionally been used as an insulator in semiconductor integrated circuits. Mixture thin film of silicon oxide and phosphorus or boron oxide - hereinafter referred to as phosphorus glass film (PSGII)
Alternatively, by controlling the mixing ratio of a boron glass film (BSG film), it can be used as a resistor with a desired resistance.
ＣＣＭＯＳ−５ＲＡを製造するに際し、一般にメモリセ
ルは４個のＭＯ３型トランジスタと２個の高抵抗素子よ
り構成される。これらは搬纏であり、およそ１．ＯＸ５
．Ｏμｍ’の大きさを持つ、製造方法としては、半導体
基板の一主面の絶縁膜上に多結晶シリコン膜を堆積し、
フォトエツチングによりパターン加工して形成するのが
一般である。When manufacturing CCMOS-5RA, a memory cell is generally composed of four MO3 type transistors and two high resistance elements. These are carriers and are approximately 1. OX5
．． As a manufacturing method, a polycrystalline silicon film is deposited on an insulating film on one main surface of a semiconductor substrate, and
It is generally formed by pattern processing using photoetching.
【発明が解決しようとする課Ｉｌｌ
先の多結晶シリコン膜はＣＶＤ法を用いて形成されるが
、抵抗率は原料ガスの不純物量により決定され安定性に
欠ける。さらに、この高抵抗素子は、多結晶シリコン膿
故膜中に拡散される水素の −−影響を受は不安定とな
る。このことは、０ＭＯ３−３ＲＡＭにおいては、主要
特性である消費電流（ＩＤＤＳ）を制御して製造するこ
とが難しいことを示す。そこで、本発明の目的は安定し
た高低抗素子を提供することである。
【課題を解決するための手段］
本発明は、ＰＳＧ膜あるいはＢＳＧＩＩを高抵抗素子と
して用いることによりかかる不具合点を解消した。
【実 施 例】
以下、本発明の実施例を示す、先づ既存の方法により、
半導体基板の一主面にＭＯＳ型半導体集積回路のゲート
形成であるゲート金属−一般にはドナーまたはアクセプ
タ不純物をドープしたポリシリコンあるいは該ポリシリ
コンと高融点金属との化合物−のパターン加工までを行
なう、ここでゲート金属は、将来形成される抵抗体の下
部電極となる０次に既存のＣＶＤ法により、一定のＰ２
Ｏ、モル濃度で、ＰＳＧ膜を形成する。その後、既存の
フォトエツチングにより該ＰＳＧ膜をパターン加工する
。さらに、該パターンの上にＣＶＤ絶縁膜を形成し、該
ＰＳＧＩＩＩの真上の該ＣＶＤ絶縁膜をフォトエツチン
グにより、コンタクト穴を明ける。その後、将来の抵抗
体の上部電極としての、キャリヤー不純物をドープされ
たポリシリコンあるいはアルミニューム膜を形成し、パ
ターン加工する。このとき、上部電極と下部電極の間の
ＰＳＧＰＩ４が抵抗体となる。ＰＳＧ＃のＰ２Ｏ５モル
濃度を４モル％とし、膜厚な１０００人とする。さらに
パターンサイズを、２．５Ｘ２゜５μｍ Ｏとすると、
得られる抵抗は１０”Ω（５ＰＡ□５ｖ）である、この
様に、Ｐ２Ｏ５モル濃度、ＰＳＧ膜厚、パターンサイズ
を変量要因とすることにより、所望の抵抗が得られる。
ＰＳＧＩＩの形成方法において、Ｓ、Ｏ，のＣＶＤ膜に
、！１ｐ＊あるいは１１Ｂ＋を選択的にイオン注入し、
熱アニールする方法は容易に推察される。
［発明の効果］
以上の様に、本発明により安定した高抵抗素子が得られ
る。Problems to be Solved by the Invention Although the polycrystalline silicon film described above is formed using the CVD method, the resistivity is determined by the amount of impurities in the source gas and lacks stability. Furthermore, this high resistance element becomes unstable due to the influence of hydrogen diffused into the polycrystalline silicon impurity film. This indicates that it is difficult to manufacture OMO3-3RAM by controlling its main characteristic, current consumption (IDDS). Therefore, an object of the present invention is to provide a stable high-low resistance element. [Means for Solving the Problems] The present invention solves these problems by using a PSG film or BSGII as a high resistance element. [Example] Hereinafter, an example of the present invention will be described, first by an existing method.
Patterning of gate metal (generally polysilicon doped with donor or acceptor impurities or a compound of polysilicon and a high melting point metal) for forming a gate of a MOS type semiconductor integrated circuit on one main surface of a semiconductor substrate; Here, the gate metal, which will become the lower electrode of the resistor that will be formed in the future, is made with a constant P2 by the existing CVD method of zero order.
A PSG film is formed at a molar concentration of O. Thereafter, the PSG film is patterned using conventional photoetching. Further, a CVD insulating film is formed on the pattern, and a contact hole is formed by photoetching the CVD insulating film directly above the PSGIII. Thereafter, a polysilicon or aluminum film doped with carrier impurities is formed and patterned to serve as the upper electrode of a future resistor. At this time, the PSGPI4 between the upper electrode and the lower electrode becomes a resistor. The P2O5 molar concentration of PSG# is 4 mol%, and the film thickness is 1000. Furthermore, if the pattern size is 2.5×2゜5μm O,
The resistance obtained is 10"Ω (5PA□5v). In this way, the desired resistance can be obtained by using the P2O5 molar concentration, PSG film thickness, and pattern size as variable factors. In the method for forming PSGII, Selective ion implantation of !1p* or 11B+ into the S, O, CVD film,
The thermal annealing method can be easily deduced. [Effects of the Invention] As described above, a stable high resistance element can be obtained by the present invention.
第１図は、高抵抗素子の断面構造を示す図。
第２図は、ＰＳＧＩＩＩ１００Ｏ人、パターンサイズ２
．５Ｘ２．５ｕｍ”での、Ｐ −Ｏｓモル濃度と抵抗の
関係を示す図。
ｌはパシベーション膜、２は上部電極、３はＰＳＧ膜、
４は下部電極、５はフィールド膜、６はシリコン基板、
７は眉間絶縁膜、８は上部電極端子、９は下部電極端子
。
以上
出願人 セイコーエプソン株式会社
第１図
Ｏユ 今 ６ ８
Ｐａ Ｏｒ ｔｌＬＺ
第２図FIG. 1 is a diagram showing a cross-sectional structure of a high resistance element. Figure 2 shows PSGIII 100 people, pattern size 2.
．． A diagram showing the relationship between P-Os molar concentration and resistance at 5x2.5um". l is the passivation film, 2 is the upper electrode, 3 is the PSG film,
4 is a lower electrode, 5 is a field film, 6 is a silicon substrate,
7 is an insulating film between the eyebrows, 8 is an upper electrode terminal, and 9 is a lower electrode terminal. Applicant: Seiko Epson Co., Ltd. Figure 1 Oyu Now 6 8
Pa Or tlLZ Figure 2
Claims (1)
混合物薄膜を抵抗体として用いたことを特徴とする高抵
抗素子。A high resistance element characterized by using a thin film of a mixture of silicon oxide and phosphorus or boron oxide as a resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7128588A JPH01243570A (en) | 1988-03-25 | 1988-03-25 | High-resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7128588A JPH01243570A (en) | 1988-03-25 | 1988-03-25 | High-resistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01243570A true JPH01243570A (en) | 1989-09-28 |
Family
ID=13456278
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7128588A Pending JPH01243570A (en) | 1988-03-25 | 1988-03-25 | High-resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01243570A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10985237B2 (en) | 2019-03-15 | 2021-04-20 | Toshiba Memory Corporation | Semiconductor device |
-
1988
- 1988-03-25 JP JP7128588A patent/JPH01243570A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10985237B2 (en) | 2019-03-15 | 2021-04-20 | Toshiba Memory Corporation | Semiconductor device |
| US11574994B2 (en) | 2019-03-15 | 2023-02-07 | Kioxia Corporation | Semiconductor device |
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