JPH01242953A - Production of semiconductor exhaust gas sensor - Google Patents
Production of semiconductor exhaust gas sensorInfo
- Publication number
- JPH01242953A JPH01242953A JP7120988A JP7120988A JPH01242953A JP H01242953 A JPH01242953 A JP H01242953A JP 7120988 A JP7120988 A JP 7120988A JP 7120988 A JP7120988 A JP 7120988A JP H01242953 A JPH01242953 A JP H01242953A
- Authority
- JP
- Japan
- Prior art keywords
- die
- mold
- sensor body
- sensor
- exhaust gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 9
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 9
- 239000000919 ceramic Substances 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 4
- 239000000446 fuel Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 abstract description 17
- 239000000463 material Substances 0.000 abstract description 16
- 239000011248 coating agent Substances 0.000 abstract description 6
- 238000000576 coating method Methods 0.000 abstract description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 abstract description 4
- 229910009043 WC-Co Inorganic materials 0.000 abstract description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 229910052697 platinum Inorganic materials 0.000 abstract description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- 229910002929 BaSnO3 Inorganic materials 0.000 abstract 1
- 238000005524 ceramic coating Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- -1 5iCSSLNa Chemical compound 0.000 description 1
- 229920001353 Dextrin Polymers 0.000 description 1
- 239000004375 Dextrin Substances 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910003296 Ni-Mo Inorganic materials 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- WDIHJSXYQDMJHN-UHFFFAOYSA-L barium chloride Chemical compound [Cl-].[Cl-].[Ba+2] WDIHJSXYQDMJHN-UHFFFAOYSA-L 0.000 description 1
- 229910001626 barium chloride Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 235000019425 dextrin Nutrition 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000001050 lubricating effect Effects 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の利用分野］
この発明は、プレス成型を用いた半導体排ガスセンサの
製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a method of manufacturing a semiconductor exhaust gas sensor using press molding.
［従来技術］
発明者らは、プレス成型を用いた半導体排ガスセンサの
製造方法を提案した（特願昭６２−１２８．５９９号）
。プレス成型を用いると、通常のグリーンシートの積層
を用いた製造方法（例えば特公昭６０−２１．３−１１
号、特公昭５７−１５．３３５号）よりも、センサの生
産性を向上し、かつセンサ材料の汚染を抑制することが
できる。グリーンシートを用いると、シートをセンサデ
ツプに切断する際に、材料に多量のロスが生じる。ロス
した材料をグリーンノートに混入し、再度センサ材料と
して用いると、製造工程でセンサ材料に不純物が混入し
易い。[Prior Art] The inventors proposed a method for manufacturing a semiconductor exhaust gas sensor using press molding (Patent Application No. 128.599/1982).
. When press molding is used, a manufacturing method using normal green sheet lamination (for example,
(Japanese Patent Publication No. 57-15.335), the productivity of the sensor can be improved and the contamination of the sensor material can be suppressed. With green sheets, a large amount of material is lost when cutting the sheets into sensor depths. If the lost material is mixed into the Green Note and used again as a sensor material, impurities are likely to be mixed into the sensor material during the manufacturing process.
発明者は、ここで次の問題に直面した。金型として通常
の鋼を用いると、金型はセンサ材料により削られ、金型
の消耗が著しかった。そこで発明者は、超硬合金製の金
型を試作した。しかしこの金型では、潤滑性の不足のた
め、プレス成型したセンサ本体を型から抜くことが出来
なかった。The inventor faced the following problem. When ordinary steel was used as the mold, the mold was scraped by the sensor material, resulting in significant mold wear. Therefore, the inventor prototyped a mold made of cemented carbide. However, with this mold, the press-molded sensor body could not be removed from the mold due to lack of lubricity.
［発明の課題］
この発明の課題は、金型の耐摩耗性と潤滑性とを向上さ
せ、プレス成型によるセンサ本体の製造を容易にする点
に有る。[Problem of the Invention] An object of the present invention is to improve the wear resistance and lubricity of a mold and to facilitate the manufacture of a sensor body by press molding.
［発明の構成］
この発明は、空燃比により抵抗値が変化する金属酸化物
半導体の粉末を、金型によりプレス成型してセンサ本体
とするようにした半導体排ガスセンサの製造方法におい
て、前記金型を超硬合金により構成すると共に、金型の
内面にセラミックの被覆を施したことを特徴とする。[Structure of the Invention] The present invention provides a method for manufacturing a semiconductor exhaust gas sensor in which a sensor body is formed by press-molding metal oxide semiconductor powder whose resistance value changes depending on the air-fuel ratio using a mold. The mold is made of cemented carbide, and the inner surface of the mold is coated with ceramic.
ここに超硬合金としては、例えばＷＣ−ＣＯｌＷＣ−Ｍ
ｏ等のＷＣをベースとしたもの、あるいはＣｒ５Ｃ＊
ＮｉやＴｉＣ−Ｎｉ−Ｍｏ等が有る。これらの材料は
硬く、センサ材料の金属酸化物半導体による研削を受け
ない。Here, as the cemented carbide, for example, WC-COLWC-M
o etc. based on WC, or Cr5C*
Examples include Ni and TiC-Ni-Mo. These materials are hard and are not susceptible to abrasion by the metal oxide semiconductor of the sensor material.
次にセラミック被覆としては、例えばＴｉＣ。Next, as the ceramic coating, for example, TiC.
ＴｉＮ、５ｉＣＳＳＬＮａ、ＡＩＮ、ＷＣ等が有る。There are TiN, 5iCSSLNa, AIN, WC, etc.
これらの材料は硬Ｘかつ潤滑性に富み、金属酸化物半導
体による摩耗を受けず、しかも型からのセンサ本体の抜
き出しを容易にする。このような被覆の形成は、例えば
プラズマＣＶＤにより行うことができる。プラズマＣＶ
Ｄの利点は、型の内面に容易に被覆を設けることができ
る点に有る。These materials are hard and have high lubricity, are not subject to wear caused by metal oxide semiconductors, and also facilitate the removal of the sensor body from the mold. Formation of such a coating can be carried out, for example, by plasma CVD. plasma CV
The advantage of D is that the inner surface of the mold can be easily coated.
以下、Ｂａ５ｎＯｓのプレス成型を例に、実施例を説明
する。Examples will be described below using press molding of Ba5nOs as an example.
［実施例コ
第１図のプレス装置２を用いて、センサ本体のプレス成
型を行った。図において、４は固定型、６はキャビティ
で、８はキャビティ６に連通させたスリットで電極線を
挿通ずるためのものである。[Example 1] The sensor body was press-molded using the press apparatus 2 shown in FIG. In the figure, 4 is a fixed type, 6 is a cavity, and 8 is a slit communicating with the cavity 6 through which the electrode wire is inserted.
ここでは電極線の線径（７０μａ＋）に合わせ、スリッ
ト８の幅を１００μｍとした。ＩＯは下部可動型、１２
は上部可動型で、１４はホッパーである。そしてホッパ
ー１４から投入した金属酸化物半導体（ＢａＳｎＯｉ）
の粉末を、固定型４や可動型１０゜１２の金型で上下か
ら加圧成型し、センサ本体２０とした。なお１６．１８
は一対の電極線で、ここでは白金に少量のＺ ｒ Ｏｘ
を添加したものを用い、その線径は７０μ憔とした。な
おここでは金属酸化物半導体としてＢａ５ｎＯｓを示し
たが、Ｔ ｉ Ｏｔや５ｒＴｉＯｓ、あるいはＬａＣｏ
０．等でも良い。Here, the width of the slit 8 was set to 100 μm in accordance with the wire diameter (70 μa+) of the electrode wire. IO is lower movable type, 12
is a movable upper part, and 14 is a hopper. Then, metal oxide semiconductor (BaSnOi) was introduced from the hopper 14.
The powder was molded under pressure from above and below using a fixed die 4 and a movable die 10°12 to form a sensor body 20. Furthermore, 16.18
is a pair of electrode wires, here a small amount of Z r Ox is added to platinum.
The wire diameter was 70μ. Although Ba5nOs is shown here as a metal oxide semiconductor, TiOt, 5rTiOs, or LaCo
0. etc. is also fine.
固定型４や可動型ｉ ０，１２は超硬合金材料で構成し
、ここではＷＣ−Ｃｏ材料を用いた。このような超硬合
金自体は周知であり、他の超硬合金を用いても良い。そ
して固定型４や可動型１０゜１２の全面をプラズマＣＶ
Ｄにより、厚さ３μｍ程度のＴｉＣ膜で被覆した。Ｔｉ
Ｃに代え、ＴｉＮやＳ ｒ Ｃｚ Ｓ ｉｓＮいＡＩＮ
、ＷＣ等のセラミックで被覆しても良い。これらのセラ
ミックはいずれも硬く、かつ潤滑性に富んでいる。好ま
しいセラミック被覆の材料は、炭化物と窒化物である。The fixed mold 4 and the movable molds i0 and 12 are made of cemented carbide material, and here WC-Co material is used. Such cemented carbide itself is well known, and other cemented carbide may also be used. Then, the entire surface of the fixed mold 4 and the movable mold 10°12 is coated with plasma CV.
It was covered with a TiC film having a thickness of about 3 μm. Ti
Instead of C, use TiN or S r Cz S isN AIN
It may be coated with ceramic such as , WC or the like. All of these ceramics are hard and have high lubricity. Preferred ceramic coating materials are carbides and nitrides.
また被覆の厚さは例えばｔ−ｉｏμ膿程度とする。The thickness of the coating is, for example, about t-ioμ.
なおＴｉＣ等の潤滑性セラミックによる被覆は、金属酸
化物半導体と接触する部分のみに、部分的に施しても良
い。Note that the coating with a lubricating ceramic such as TiC may be partially applied only to the portion that comes into contact with the metal oxide semiconductor.
このようにして得たセンサ本体２０を空気中等で焼結し
、第２図の排ガスセンサとした。即ち、アルミナ基板２
２の先端に設けたくぼみ部２４にセンサ本体２０を収容
し、電極線１６．＋８を基板に設けた印刷電極２６，２
７．２８．２９に溶接した。なお３０．３２は、予め印
刷電極２６．２８に接続した外部リードである。センサ
本体２０をくぼみ部２４に収容し、電極線１６．１８を
溶接した後、溶射によりセンサ本体２０をくぼみ部２４
に固定した。溶射は材料にＭｇＡｌ＊Ｏａを用い、溶射
電流６５０Ａで Ａｒ雰囲気下で行い、膜厚２００μｍ
とした。３４は生成した溶射膜である。The sensor body 20 thus obtained was sintered in air or the like to form the exhaust gas sensor shown in FIG. That is, the alumina substrate 2
The sensor main body 20 is accommodated in the recessed part 24 provided at the tip of the electrode wire 16. +8 printed electrodes 26, 2 provided on the substrate
Welded on 7.28.29. Note that 30.32 is an external lead connected to the printed electrode 26.28 in advance. After the sensor body 20 is accommodated in the recess 24 and the electrode wires 16.18 are welded, the sensor main body 20 is placed in the recess 24 by thermal spraying.
Fixed. Thermal spraying was carried out using MgAl*Oa as the material, at a spraying current of 650 A, in an Ar atmosphere, and with a film thickness of 200 μm.
And so. 34 is the generated thermal spray film.
なお溶射膜３４には、例えばＴ ｉ ＯｔやＡＩ＊Ｏａ
等を用いてら良い。また好ましくは溶射膜３４はセンサ
本体２０の一部のみを被覆するようにし、応答速度の低
下を防止する。実施例では、センサ本体２０のｌθ％程
度を被覆するようにした。The sprayed film 34 may include, for example, T i Ot or AI*Oa.
It is better to use etc. Preferably, the sprayed film 34 covers only a portion of the sensor body 20 to prevent a decrease in response speed. In the embodiment, approximately lθ% of the sensor body 20 was covered.
試験例
水酸化ナトリウムで安定化したスズ酸の水溶液（ＰＨ１
３）に、塩化バリウム水溶液を加え、室温でＢａ５ｎＯ
ｓ・７ｌ−１ｔＯを沈でんさせた。沈でんの水洗を繰り
返しながら、溶液を７０℃に加温し、ＢａＳｎＯ３・５
ＨｔＯを経て、Ｂａ５ｎＯａ ・３Ｈ＊０の結晶を得た
。Ｂａ５ｎＯｓ・３Ｈ１０は、針状の長さ数十μｍ程度
の結晶として沈でんした。この結晶を空気中で１４００
℃で加熱し、Ｂａ５ｎＯ＊へ熱分解した。熱分解後のＢ
ａＳｎＯ３粒子は、最初の含水結晶の形態を維持してい
た。これに２ｗｔ％の酢酸セルロースバインダーを加え
、プレス成型した。なおプレス装置は第１図のものを用
い、電極線１６．１８の間隔は１ｍｍとした。バインダ
ーはデキストリンやでん粉、あるいはホウ素酸化物等に
変えても良く、あるいは用いなくてら良い。Test Example: An aqueous solution of stannic acid stabilized with sodium hydroxide (PH1
Add barium chloride aqueous solution to 3), and add Ba5nO at room temperature.
s.7l-1tO was precipitated. While repeatedly washing the precipitate with water, the solution was heated to 70°C, and BaSnO3.5
Through HtO, Ba5nOa .3H*0 crystals were obtained. Ba5nOs.3H10 was precipitated as needle-like crystals with a length of about several tens of μm. 1400 ml of this crystal in the air
It was heated at ℃ to thermally decompose it into Ba5nO*. B after pyrolysis
The aSnO3 particles maintained their initial hydrated crystalline morphology. 2 wt % cellulose acetate binder was added to this, and press molding was performed. Note that the press device shown in FIG. 1 was used, and the spacing between the electrode wires 16 and 18 was 1 mm. The binder may be replaced with dextrin, starch, or boron oxide, or may not be used.
ここでＢａ５ｎＯ１・３ＨｔＯを出発材料としたのは、
形がい粒子を利用して、プレス成型を容易にするためで
ある。即ち、Ｂａ５ｎＯ＋・３ＨｚＯを熱分解したＢａ
５ｎＯ，は、母結晶の形態を維持した大きな針状の粒子
（形がい粒子）となるため、流動性に富み、金型の内部
に均一に充てんすることが容易である。また外形が大き
いため、金型からこぼれだすことが少ない。Here, Ba5nO1.3HtO was used as the starting material because
This is to facilitate press molding by using shaped particles. That is, Ba obtained by thermally decomposing Ba5nO+・3HzO
Since 5nO forms large needle-like particles (shape particles) that maintain the morphology of the mother crystal, they are highly fluid and can be easily filled uniformly into the mold. Also, because the outside size is large, there is less chance of it spilling out of the mold.
次に金型４，１０．１２を各種の材質で構成し、２×２
×０．６１＋１Ｉ１１の大きさに、センサ本体２０を５
Ｔｏｎ／ｃｍ’の圧力でプレス成型した。金型４，１０
、Ｉ２の材質には、通常の材質であるダイス鋼（比較例
１）、セラミック被覆なしのＷＣ−Ｃｏ超硬合金（比較
例２）、及び内面を厚さ約３μｍのＴｉＣで被覆したＷ
Ｃ−Ｃｏ超硬合金（実施例）の３種を用いた。Next, molds 4, 10.12 are constructed of various materials, and 2×2
The size of the sensor body 20 is 5×0.61+1I11.
Press molding was performed at a pressure of Ton/cm'. Mold 4, 10
, I2 are made of die steel (comparative example 1), which is a normal material, WC-Co cemented carbide without ceramic coating (comparative example 2), and W whose inner surface is coated with TiC with a thickness of about 3 μm.
Three types of C-Co cemented carbide (Example) were used.
比較例１の場合、１万回程度のプレスで金型は消耗した
。消耗は特に固定型４で著しく、固定型４の内面にくぼ
みが生じた。消耗した固定型４を用いると、センサ本体
２０の形状がいびつとなり、また固定型４からの抜き出
し時に破損するものが生じた。In the case of Comparative Example 1, the mold was worn out after about 10,000 presses. The wear and tear was particularly significant on the fixed mold 4, and a dent was formed on the inner surface of the fixed mold 4. When a worn out fixed mold 4 is used, the shape of the sensor main body 20 becomes distorted, and some parts are damaged when being extracted from the fixed mold 4.
比較例２の場合、プレス成型後のセンサ本体２０を固定
型４から抜くことが難しかった、即ち、センサ本体２０
の大部分は、型４から抜き出す際に破損してしまった。In the case of Comparative Example 2, it was difficult to pull out the sensor body 20 after press molding from the fixed mold 4, that is, the sensor body 20
Most of them were damaged when being pulled out from mold 4.
実施例の場合、１万回程度使用しても金型４゜１０．１
２の消耗は見られず、また型４からの抜き出し時の破損
も生じなかった。なお実施例の場合、仮に金型４゜１０
．１２が消耗するとしても、消耗する部分はセラミック
被覆に限らる。そして消耗した金型４，１０．１２に再
度セラミック被覆を施什ば、金型４，１０．１２を再使
用できる。またＴｉＣによる被覆に代え、厚さ３μｍ程
度のＴｉＮ被覆を試みたが、結果は同様であった。In the case of the example, the mold 4°10.1 even after being used about 10,000 times.
No wear was observed in 2, and no damage occurred during extraction from mold 4. In the case of the example, the mold is assumed to be 4°10
．． Even if 12 wears out, the part that wears out is limited to the ceramic coating. Then, by applying ceramic coating again to the worn molds 4, 10.12, the molds 4, 10.12 can be reused. Furthermore, instead of coating with TiC, a TiN coating with a thickness of about 3 μm was tried, but the results were the same.
実施例ではＢａ５ｎＯ＊のプレス成型に付いて説明した
が、これに限るものではなく、Ｔｉｅ、や５ｒＴｉＯ＋
、ＬａＣｏＯｓ等の任意の空燃比により抵抗値が変化す
る金属酸化物半導体のプレス成型に用いることができる
。Ｂ ａ Ｓ ｎ Ｏ３は、形がい粒子の利用によりプ
レス成型が容易なため、例として示したに過ぎない。In the examples, press molding of Ba5nO* was explained, but the invention is not limited to this, and Tie, 5rTiO+
It can be used for press molding of metal oxide semiconductors whose resistance value changes depending on an arbitrary air-fuel ratio, such as , LaCoOs, etc. B a S n O 3 is only shown as an example because press molding is easy due to the use of shaped particles.
［発明の効果］
この発明では、半導体排ガスセンサのセンサ本体をプレ
ス成型する。そしてプレス成型時の、金型の消耗を防止
し、かつ金型からのセンサ本体の抜き出し時の破損を防
止して、プレス成型を容易にする。[Effects of the Invention] In the present invention, the sensor body of the semiconductor exhaust gas sensor is press-molded. Further, during press molding, consumption of the mold is prevented, and damage when the sensor main body is extracted from the mold is prevented, thereby facilitating press molding.
第１図は実施例での半導体排ガスセンサの製造工程を現
す斜視図、第２図は実施例で製造した排ガスセンサの一
部切り欠き部付き正面図である。
図において、４ 固定型、Ｉ Ｏ，＋ ２ 可動型、
１６．１８ 電極線、 ２０ センサ本体。FIG. 1 is a perspective view showing the manufacturing process of the semiconductor exhaust gas sensor in the example, and FIG. 2 is a front view with a partially cutout portion of the exhaust gas sensor manufactured in the example. In the figure, 4 fixed type, I O, + 2 movable type,
16.18 Electrode wire, 20 Sensor body.
Claims (1)
の粉末を、金型によりプレス成型してセンサ本体とする
ようにした、半導体排ガスセンサの製造方法において、 前記金型を超硬合金により構成すると共に、金型の内面
にセラミックの被覆を施したことを特徴とする、半導体
排ガスセンサの製造方法。(1) A method for manufacturing a semiconductor exhaust gas sensor in which a metal oxide semiconductor powder whose resistance value changes depending on the air-fuel ratio is press-molded using a mold to form a sensor body, wherein the mold is made of a cemented carbide. 1. A method for manufacturing a semiconductor exhaust gas sensor, characterized in that the inner surface of a mold is coated with ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7120988A JPH01242953A (en) | 1988-03-24 | 1988-03-24 | Production of semiconductor exhaust gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7120988A JPH01242953A (en) | 1988-03-24 | 1988-03-24 | Production of semiconductor exhaust gas sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01242953A true JPH01242953A (en) | 1989-09-27 |
Family
ID=13454062
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7120988A Pending JPH01242953A (en) | 1988-03-24 | 1988-03-24 | Production of semiconductor exhaust gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01242953A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5468697A (en) * | 1977-11-11 | 1979-06-01 | Nippon Soken | Gas constituent detector |
| JPS5831066A (en) * | 1981-07-28 | 1983-02-23 | Toyota Motor Corp | Punch for cold working |
-
1988
- 1988-03-24 JP JP7120988A patent/JPH01242953A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5468697A (en) * | 1977-11-11 | 1979-06-01 | Nippon Soken | Gas constituent detector |
| JPS5831066A (en) * | 1981-07-28 | 1983-02-23 | Toyota Motor Corp | Punch for cold working |
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