JPH01242479A - Aluminum nitride substrate - Google Patents
Aluminum nitride substrateInfo
- Publication number
- JPH01242479A JPH01242479A JP6933188A JP6933188A JPH01242479A JP H01242479 A JPH01242479 A JP H01242479A JP 6933188 A JP6933188 A JP 6933188A JP 6933188 A JP6933188 A JP 6933188A JP H01242479 A JPH01242479 A JP H01242479A
- Authority
- JP
- Japan
- Prior art keywords
- sintered body
- substrate
- titanium carbide
- aln
- nickel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 23
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 12
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 2
- 239000000843 powder Substances 0.000 abstract description 2
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000002904 solvent Substances 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/51—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal
- C04B41/5144—Metallising, e.g. infiltration of sintered ceramic preforms with molten metal with a composition mainly composed of one or more of the metals of the iron group
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は窒化アルミニウム（Ａｉ２Ｎ）基板に関し、ざ
らに詳しくは高い接合強度を有する導電性メタライズ層
（以下、「メタライズ層」と略す）が形成された窒化ア
ルミニウム基板に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an aluminum nitride (Ai2N) substrate, and more specifically, a conductive metallized layer (hereinafter abbreviated as "metalized layer") having high bonding strength is formed. The present invention relates to an aluminum nitride substrate.
［従来の技術ｊ
近年、特に電子装置および機器は小型化、高密度化が強
く要求されており、これらの要求はＩＣにＬＳＩを実装
する基板に対しても生じている。[Prior Art j] In recent years, there has been a strong demand for smaller size and higher density especially for electronic devices and equipment, and these demands have also arisen for substrates on which LSIs are mounted on ICs.
一方、ＬＳＩの高速作動、高集積化に伴ってチップから
発生する熱は多量になってくる傾向にあり、前述の基板
の小型化と相乗して基板単位面積当りの発熱量は大幅に
増大している。On the other hand, as LSIs operate at higher speeds and become more highly integrated, the amount of heat generated by the chips tends to increase, and combined with the aforementioned miniaturization of substrates, the amount of heat generated per unit area of the substrate increases significantly. ing.
従来、この種の実装基板としては、一般にアルミナ（Ｍ
２Ｏ３）基板が用いられている。Conventionally, this type of mounting board has generally been made of alumina (M
2O3) substrate is used.
［発明が解決しようとする課題］
しかしながら、上述したＡｌ２Ｏ３基板では熱の放散性
が十分でないという問題があり、Ｍ２Ｏ３基板よりも熱
伝導率が大きく、熱の放散性に優れた絶縁基板が必要に
なっている。これらの条件を満た１−５のとして、最近
ＮＮ焼結体で形成された基板が注目されている。このＭ
Ｎ焼結体は熱伝導率かＭ２Ｏ３基板の約８〜１０倍と高
く、また電気絶縁性にも優れ、しかも熱膨張率がシリコ
ンに近いという特性を有しているため、高集積化された
ＬＳＩ等の実装基板として適したものである。[Problems to be Solved by the Invention] However, there is a problem that the above-mentioned Al2O3 substrate does not have sufficient heat dissipation properties, and an insulating substrate that has higher thermal conductivity and excellent heat dissipation properties than the M2O3 substrate is needed. It has become. Recently, substrates formed of NN sintered bodies have been attracting attention as satisfying these conditions 1-5. This M
N sintered bodies have thermal conductivity that is approximately 8 to 10 times higher than M2O3 substrates, excellent electrical insulation, and a coefficient of thermal expansion close to that of silicon, making them highly integrated. It is suitable as a mounting board for LSI etc.
このようなＭＮ焼結体を実装基板として使用するために
は、表面に配線等を行うためのメタライズ層を形成する
必要かあるが、このメタライズ層を形成する方法として
は従来より金、銀−バラジラムを用いた厚膜法か知られ
ている。しかしなからこれらの厚膜法では、約６００〜
１０００°Ｃ程度の温度でメタライズ層を形成するため
高温下においてＭＮとメタライズ層の接合強度か低下す
るという欠点がある。In order to use such a MN sintered body as a mounting board, it is necessary to form a metallized layer on the surface for wiring, etc., but conventional methods for forming this metallized layer include gold, silver, etc. A thick film method using Balajiram is known. However, with these thick film methods, the
Since the metallized layer is formed at a temperature of about 1000°C, there is a drawback that the bonding strength between the MN and the metallized layer decreases at high temperatures.
本発明は以上述べたような従来の問題点を解決するため
になされたもので、ＡＩＮとメタライズ層の接合強度が
大ぎく、高集積・高電力電子回路用基板として最適のＡ
Ｉ！Ｎ基板を提供することを目的とする。The present invention has been made in order to solve the conventional problems as described above, and the bonding strength between the AIN and the metallized layer is very high, making it ideal as a substrate for highly integrated and high power electronic circuits.
I! The purpose is to provide an N substrate.
［課題を解決するための手段］
本発明は、窒化アルミニウム焼結体上にニッケルおよび
炭化チタンを含有する導電性メタライズ層か形成されて
なることを特徴とする窒化アルミニウム基板である。[Means for Solving the Problems] The present invention is an aluminum nitride substrate characterized in that a conductive metallized layer containing nickel and titanium carbide is formed on an aluminum nitride sintered body.
本発明において、メタライズ層を形成するニッケルと炭
化チタンの使用割合は炭化チタン含有量か１〜１０重量
％であることが好ましい。In the present invention, the ratio of nickel and titanium carbide used to form the metallized layer is preferably 1 to 10% by weight based on the titanium carbide content.
［実施例］ 次に本発明の実施例について詳細に説明する。[Example] Next, embodiments of the present invention will be described in detail.
ニッケルの粉末９５重量部と炭化チタンの扮末５重♀部
とを混合し、得られた混合物８０重量部を４重量部のエ
チルセルロースと１６重量部のα−テルピネオールに分
散せしめ、ペースト化した。次にこのペーストを厚膜印
刷法によりＭＮ焼結体上に１０〜２０柳の膜厚になるよ
うに塗布した。乾燥後、第１表に示す条件で加熱し、メ
タライズ図を形成した。95 parts by weight of nickel powder and 5 parts by weight of titanium carbide powder were mixed, and 80 parts by weight of the resulting mixture was dispersed in 4 parts by weight of ethyl cellulose and 16 parts by weight of α-terpineol to form a paste. Next, this paste was applied onto the MN sintered body by a thick film printing method to a film thickness of 10 to 20 mm. After drying, it was heated under the conditions shown in Table 1 to form a metallized pattern.
このようにして得られたＭＮ基板のＭＮ焼結体とメタラ
イズ層の接合強度を測定した。測定方法はメタライズ面
に銅製ピンをハンダ付けし、万能引張試験機を用いて行
った。その結果を第１表に併せて示す。同表の測定結果
からいずれの場合も高い接合強度が得られ、特に１３０
０’Ｃ１０，５ｈのメタライズ条件が最適条件であるこ
とがわかる。なお、このメタライズ条件での強度測定の
際、焼結体の一部かえぐり取られるモードが測定数の約
半数おり、実際の接合強度はざらに大きいと推察される
。The bonding strength between the MN sintered body and the metallized layer of the MN substrate thus obtained was measured. The measurement method was to solder copper pins to the metallized surface and use a universal tensile tester. The results are also shown in Table 1. From the measurement results in the same table, high bonding strength was obtained in all cases, especially at 130
It can be seen that the metallization condition of 0'C10,5h is the optimum condition. In addition, when measuring the strength under these metallization conditions, there was a mode in which a part of the sintered body was gouged out in about half of the measured numbers, and it is presumed that the actual bonding strength is much higher.
第１表
［発明の効果］
以上説明しノたとおり、本発明の窒化アルミニウム基板
は、基板を構成する％Ｎ焼結体とメタライズ層が高い接
合強度を示している。したがってＵＮ焼結体が本来布し
ている高熱伝導性と併せ、信頼性の高い高集積・高電力
電子回路用基板として用いることができる。Table 1 [Effects of the Invention] As explained above, in the aluminum nitride substrate of the present invention, the %N sintered body constituting the substrate and the metallized layer exhibit high bonding strength. Therefore, in addition to the inherent high thermal conductivity of the UN sintered body, it can be used as a highly reliable substrate for highly integrated and high power electronic circuits.
Claims (1)
チタンを含有する導電性メタライズ層が形成されてなる
ことを特徴とする窒化アルミニウム基板。(1) An aluminum nitride substrate characterized in that a conductive metallized layer containing nickel and titanium carbide is formed on an aluminum nitride sintered body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6933188A JPH0717469B2 (en) | 1988-03-25 | 1988-03-25 | Aluminum nitride substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6933188A JPH0717469B2 (en) | 1988-03-25 | 1988-03-25 | Aluminum nitride substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01242479A true JPH01242479A (en) | 1989-09-27 |
| JPH0717469B2 JPH0717469B2 (en) | 1995-03-01 |
Family
ID=13399459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6933188A Expired - Lifetime JPH0717469B2 (en) | 1988-03-25 | 1988-03-25 | Aluminum nitride substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0717469B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD934864S1 (en) | 2019-04-05 | 2021-11-02 | Dynabook Inc. | Mobile computer |
-
1988
- 1988-03-25 JP JP6933188A patent/JPH0717469B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USD934864S1 (en) | 2019-04-05 | 2021-11-02 | Dynabook Inc. | Mobile computer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0717469B2 (en) | 1995-03-01 |
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