JPH01238124A - Evaluating method of protective film for semiconductor device - Google Patents
Evaluating method of protective film for semiconductor deviceInfo
- Publication number
- JPH01238124A JPH01238124A JP6642588A JP6642588A JPH01238124A JP H01238124 A JPH01238124 A JP H01238124A JP 6642588 A JP6642588 A JP 6642588A JP 6642588 A JP6642588 A JP 6642588A JP H01238124 A JPH01238124 A JP H01238124A
- Authority
- JP
- Japan
- Prior art keywords
- protective film
- pressure
- liquid
- semiconductor substrate
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001681 protective effect Effects 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 11
- 230000002706 hydrostatic effect Effects 0.000 claims abstract description 7
- 239000011347 resin Substances 0.000 abstract description 9
- 229920005989 resin Polymers 0.000 abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 6
- 230000005856 abnormality Effects 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 2
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 230000000762 glandular Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体装置の保護膜の評価方法に関する。[Detailed description of the invention] Industrial applications The present invention relates to a method for evaluating a protective film of a semiconductor device.
従来の技術
最近、半導体装置のシリコン基板表面に設けられた保護
膜を評価する方法として、半導体装置を薬品処理する方
法が短時間でしかも容易に評価できることから一般的に
行なわれるようになってきている。第２図を用いてこの
従来のチップ（半導体基板）表面の保護膜の評価方法に
ついて説明する。この方法はビーカーなどの容器１１中
に王水や水酸化カリウム水溶液などのアルミニウムを溶
解する水溶液１２を満たし、その中に所定の時間にわた
ってチップ１３を浸漬させた後、取り出して顕微鏡など
でチップ表面を観察し、保護膜のピンホールに起因する
チップ表面のアルミ配線パターンの腐食状況を調べるも
のである。BACKGROUND OF THE INVENTION Recently, as a method for evaluating the protective film provided on the surface of the silicon substrate of a semiconductor device, a method of treating the semiconductor device with chemicals has become common because the evaluation can be done quickly and easily. There is. This conventional method for evaluating a protective film on the surface of a chip (semiconductor substrate) will be explained with reference to FIG. In this method, a container 11 such as a beaker is filled with an aqueous solution 12 that dissolves aluminum, such as aqua regia or potassium hydroxide solution, and a chip 13 is immersed therein for a predetermined period of time. The objective is to observe corrosion of the aluminum wiring pattern on the chip surface caused by pinholes in the protective film.
発明が解決しようとする課題
しかし、このような方法では、対象となる半導体装置が
樹脂モールド品であると、樹脂封止にともなうチップ表
面の保護膜のクラック・ピンホールの発生に対して検知
することができないという問題があった。また、仮りに
樹脂モールドした半導体装置を開封した後薬品処理をす
るとしても、樹脂開封に時間を要するという問題がある
。Problems to be Solved by the Invention However, in this method, if the target semiconductor device is a resin molded product, it is difficult to detect cracks and pinholes in the protective film on the chip surface due to resin sealing. The problem was that I couldn't do it. Furthermore, even if a resin-molded semiconductor device is unsealed and then treated with chemicals, there is a problem in that it takes time to open the resin unseal.
そこで、本発明は上記問題点を解消し得る半導体装置の
保護膜の評価方法を提供することを目的とする。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a method for evaluating a protective film of a semiconductor device that can solve the above-mentioned problems.
課題を解決するための手段
上記問題点を解決するため、本発明の半導体装置の保護
膜の評価方法は、表面が保護ＩＩｔＡで被覆された半導
体基板を液体内に浸漬し、同液体を加圧して前記半導体
基板に静水圧を加え、次に前記半導体基板を液体から取
り出した後、？＠惨配置腺層を溶解づる溶液中に浸漬さ
せる方法である。Means for Solving the Problems In order to solve the above problems, the method for evaluating a protective film for a semiconductor device of the present invention involves immersing a semiconductor substrate whose surface is coated with protective IItA in a liquid, and pressurizing the liquid. After applying hydrostatic pressure to the semiconductor substrate and then removing the semiconductor substrate from the liquid, ? This is a method in which the glandular layer is immersed in a solution that dissolves it.
作用
上記保護膜の評価方法によると、静水圧により、保護膜
が設けられた半導体基板に樹脂封止時と同等の圧力を加
えるため、実際の使用状態での保護膜に光生しやすいク
ラックやピンホールなどの検出が容易となる。Effects According to the above method for evaluating protective films, hydrostatic pressure applies pressure equivalent to that during resin sealing to the semiconductor substrate on which the protective film is provided, so there are no cracks or pins that can easily form on the protective film in actual use. Holes etc. can be easily detected.
実施例
以下、本１１明の一実施例を第１図（ａ）および（ｂ）
を用いて説明する。Example Below, an example of this 11th light is shown in Figures 1 (a) and (b).
Explain using.
まず、第１図（ａ）に示すように、側番封止圧相当の圧
力に耐えられる強固な金属容器１を準備し、その中に液
体たとえば水２（容器を腐食しないものであれば特に限
定しない）を満たし、次に評価する保護膜が施されたチ
ップ（半導体基板）３を完全に浸漬させる。次に加圧用
プレート４のついた密閉益５を用いて容器１に益をする
。なお、密閉益５の側面には、ゴム性パツキン６が装着
されており、加圧後に容器１の密閉性が損なわれない＠
造になっている。この状態で軽く加圧用プレート４を上
から押えると、容器中の空気や余分な水が隙間７より容
器１の外部に除かれ、容器１の内部は水で完全に満たさ
れた状態となる。この状態を維持しつつ、第１図（ｂ）
に示すように加圧用プレート４に、樹脂封止時にチップ
３に加わる圧力に相当する圧力を真上から加える。この
加圧は開城的に精度良く行なうことが望ましい。First, as shown in Fig. 1(a), prepare a strong metal container 1 that can withstand pressure equivalent to the side sealing pressure, and fill it with liquid such as water 2 (especially if it does not corrode the container). (not limited), and then the chip (semiconductor substrate) 3 coated with the protective film to be evaluated is completely immersed. Next, the container 1 is sealed using a sealing cap 5 with a pressurizing plate 4 attached. In addition, a rubber gasket 6 is attached to the side of the sealant 5, so that the sealability of the container 1 is not impaired after pressurization.
It is constructed. In this state, when the pressurizing plate 4 is pressed lightly from above, air and excess water in the container are removed to the outside of the container 1 through the gap 7, and the inside of the container 1 is completely filled with water. While maintaining this state, Fig. 1(b)
As shown in the figure, a pressure corresponding to the pressure applied to the chip 3 during resin sealing is applied to the pressure plate 4 from directly above. It is desirable that this pressurization be performed with high precision in the manner of opening the castle.
このように、所定の外圧を付加することにより容器１に
複数のチップ３を入れた場合にも、均一な静水圧が付加
され、チップ３の保護膜に異常がある場合には、圧力に
よってクラックやピンホールが弁士ずる。そして、加圧
後のチップ３を従来例で説明したような薬品処理を行な
うことにより、保護膜に異常のあるチップ３はそのアル
ミ配線パターン（電楊配Ｂ層）が腐食し、保護膜のピン
ホールやクラックの検出を行うことができる。In this way, even when a plurality of chips 3 are placed in the container 1 by applying a predetermined external pressure, uniform hydrostatic pressure is applied, and if there is an abnormality in the protective film of the chips 3, the pressure will cause cracks. Or a pinhole is a benshi. Then, by subjecting the pressurized chip 3 to chemical treatment as explained in the conventional example, the chip 3 with an abnormality in the protective film has its aluminum wiring pattern (electronic wiring B layer) corroded, and the protective film is damaged. Pinholes and cracks can be detected.
なお、本実施例では、チップの場合について説明したが
、ウェハーについても適用できる。In this embodiment, although the case of a chip has been described, the present invention can also be applied to a wafer.
また、本昇明による保護膜評価方法は、半導体装置の製
造工程中の保護膜を形成する工程とポンディングパッド
部保護膜除去工程との間の任意の工程に加えることによ
り保護膜が異常なウェハーの除去にｂ役立つ。In addition, the protective film evaluation method proposed by Shomei can be added to any process between the process of forming a protective film and the process of removing the protective film from the bonding pad area during the manufacturing process of semiconductor devices to detect abnormalities in the protective film. This helps in removing the wafer.
弁明の効果
上記本発明の評価方法によれば、封止樹脂が施されない
状態で、静水圧により樹脂封止時に作用する場合と同等
の圧力を半導体基板に作用させて保護膜のクラック・ピ
ンホールを検出するため、樹脂開封をした後薬品処理を
する場合に比べて、容易かつ迅速に保護膜の評価を行う
ことができる。Effects of Defense According to the evaluation method of the present invention described above, cracks and pinholes in the protective film are removed by applying pressure equivalent to that applied during resin sealing by hydrostatic pressure to the semiconductor substrate without applying the sealing resin. Because of this, the protective film can be evaluated easily and quickly compared to the case where the resin seal is opened and then treated with chemicals.
第１図（ａ）および（ｂ）は本光明の保護膜の評価方法
の一実施例を説明する概略断面図、第２図は従来例の保
護膜の評価方法を説明する概略断面図である。
１・・・容器、２・・・水、３・・・チップ、４・・・
プレート。
第１図
＜ （ｌ ＞ 、、＋４
（ｂ）FIGS. 1(a) and (b) are schematic sectional views illustrating an embodiment of the protective film evaluation method of the present invention, and FIG. 2 is a schematic sectional view illustrating a conventional protective film evaluation method. . 1... Container, 2... Water, 3... Chip, 4...
plate. Figure 1 < (l > ,, +4 (b)
Claims (1)
漬し、同液体を加圧して前記半導体基板に静水圧を加え
、次に前記半導体基板を液体から取り出した後、電極配
線層を溶解する溶液中に浸漬させる半導体装置の保護膜
の評価方法。1. A semiconductor substrate whose surface is covered with a protective film is immersed in a liquid, the liquid is pressurized to apply hydrostatic pressure to the semiconductor substrate, and after the semiconductor substrate is removed from the liquid, an electrode wiring layer is removed. A method for evaluating a protective film for a semiconductor device that is immersed in a dissolving solution.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6642588A JPH01238124A (en) | 1988-03-18 | 1988-03-18 | Evaluating method of protective film for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6642588A JPH01238124A (en) | 1988-03-18 | 1988-03-18 | Evaluating method of protective film for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01238124A true JPH01238124A (en) | 1989-09-22 |
Family
ID=13315420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6642588A Pending JPH01238124A (en) | 1988-03-18 | 1988-03-18 | Evaluating method of protective film for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01238124A (en) |
-
1988
- 1988-03-18 JP JP6642588A patent/JPH01238124A/en active Pending
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