JPH0122810B2 - - Google Patents
Info
- Publication number
- JPH0122810B2 JPH0122810B2 JP4096381A JP4096381A JPH0122810B2 JP H0122810 B2 JPH0122810 B2 JP H0122810B2 JP 4096381 A JP4096381 A JP 4096381A JP 4096381 A JP4096381 A JP 4096381A JP H0122810 B2 JPH0122810 B2 JP H0122810B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- gas
- metal
- film
- reactive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 25
- 239000010408 film Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 8
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- 229910001882 dioxygen Inorganic materials 0.000 description 6
- 229920006254 polymer film Polymers 0.000 description 6
- 238000005546 reactive sputtering Methods 0.000 description 5
- 239000003507 refrigerant Substances 0.000 description 5
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 239000010941 cobalt Substances 0.000 description 3
- 229910017052 cobalt Inorganic materials 0.000 description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229910001006 Constantan Inorganic materials 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 150000002506 iron compounds Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 150000002927 oxygen compounds Chemical class 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J15/00—Chemical processes in general for reacting gaseous media with non-particulate solids, e.g. sheet material; Apparatus specially adapted therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oxygen, Ozone, And Oxides In General (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
【発明の詳細な説明】
本発明は金属酸化物薄膜の製造方法に関するも
のであり、詳しくは、有機、無機材質基板表面に
附着した金属薄膜の表面に高温の反応性混合ガス
を吹きつけるとともに前記基板の反対側を冷却す
ることを特徴とする金属酸化薄膜の製造方法に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a metal oxide thin film, and more specifically, a high temperature reactive mixed gas is blown onto the surface of a metal thin film attached to the surface of an organic or inorganic substrate, and the The present invention relates to a method for manufacturing a metal oxide thin film, characterized in that the opposite side of the substrate is cooled.
近年、薄膜技術の進歩は著しく、その応用範囲
も多岐にわたつており例えば薄膜技術として、ス
パツタリング、真空蒸着、イオンプレーテイング
などがあり、その応用としてIC技術、電気材料
などのエレクトロニクスあるいは各種装飾に用い
られている。 In recent years, thin film technology has made remarkable progress, and its application range is wide-ranging.For example, thin film technology includes sputtering, vacuum evaporation, ion plating, etc., and its applications include IC technology, electronics such as electrical materials, and various decorations. It is used.
基板上に薄膜を形成する技術は一種元素から成
る場合はかなりの精度で再現性良くなしうるが、
化合物、あるいは合金にすることはむずかしい。 The technique of forming a thin film on a substrate can be done with considerable precision and good reproducibility when it consists of one type of element, but
It is difficult to make compounds or alloys.
従来、合金又は化合物の薄膜を形成する方法と
して反応性スパタリング、あるいは反応性蒸着法
で化合物を形成していた。反応性蒸着は例えば
SiO2薄膜を基板面に形成する場合、真空蒸着装
置に酸素ガスを導入し、酸素ガスの雰囲気中で
SiOを蒸着し、SiO2（SiOx：ｘ＝１〜２）を作る
方法が用いられている。反応は次の通りである。 Conventionally, a thin film of an alloy or a compound has been formed by reactive sputtering or reactive vapor deposition. Reactive deposition is e.g.
When forming a SiO 2 thin film on the substrate surface, oxygen gas is introduced into the vacuum evaporation equipment and the film is deposited in an oxygen gas atmosphere.
A method is used in which SiO is deposited to form SiO 2 (SiOx: x=1 to 2). The reaction is as follows.
SiO＋O2→SiOx（ｘ＝１〜２）
また反応性スパタリング法では、ターゲツトを
化合物にして化合物の薄膜を作ると、形成した薄
膜の成分がターゲツトの化合物と異なるために、
例えば酸化物のスパタリングでは、放電ガスの
Arの中に酸素ガスを適当に混合してO2を補い、
元の成分と同じ組成の薄膜を作るようにする方法
が用いられている。しかし反応性蒸着および反応
性スパタリングによる化合物の形成は、
(1) 元の成分と同じ組成、あるいは目的とする化
合物の組成を基板面に生成することがむずかし
い。 SiO + O 2 → SiOx (x = 1 to 2) In addition, in the reactive sputtering method, when a thin film of the compound is made using a compound as the target, the components of the formed thin film are different from the target compound.
For example, in oxide sputtering, the discharge gas
Properly mix oxygen gas into Ar to supplement O2 .
A method is used to create a thin film with the same composition as the original component. However, when forming a compound by reactive vapor deposition and reactive sputtering, (1) it is difficult to produce the same composition as the original component or the composition of the target compound on the substrate surface;
(2) 反応性スパタリングにおいては特に化合物の
薄膜生成速度が遅い。(2) In reactive sputtering, the rate of compound thin film formation is particularly slow.
などの欠点があつた。There were drawbacks such as:
本発明者は、上記従来の欠点に鑑み、反応性蒸
着、反応性スパタリングの欠点をなくすべく種々
の実験、考察を行つた結果、高分子、無機材質の
基板面に形成した薄膜の表面に高温の反応性混合
ガスを吹きつけ、前記基板の反対側を冷却するこ
とで薄膜のごく表面層のみを酸素化合物に容易に
変りうることを見い出した。 In view of the above-mentioned conventional drawbacks, the present inventor conducted various experiments and studies in order to eliminate the drawbacks of reactive vapor deposition and reactive sputtering, and as a result, the inventors discovered that high temperature It has been found that only the very surface layer of the thin film can be easily converted into an oxygen compound by blowing a reactive mixed gas of 1 and cooling the opposite side of the substrate.
以下、本発明の実施例における金属酸化物薄膜
の製造方法の詳細を述べる。 Hereinafter, details of the method for manufacturing a metal oxide thin film in an example of the present invention will be described.
第１の実施例を示す第１図においてガラス基板
１にFe金属を真空蒸着し、同図に示すような真
ちゆうの冷却槽２に固定する。なお、ここで金属
膜の形成法としてスパツタリングを用いてNi膜
等を形成してもよい。冷却部３は液体窒素温度
（77〓）から常温（300〓）まで任意の温度設定が
出来る。冷媒３′はメチルアルコールとドライア
イスを用い、−10℃の温度条件下でおこない温度
測定には銅−コンスタンタン熱電対４を用いた。
蒸着したFe薄膜５側は、常温雰囲気におき、下
方より高温の混合ガス６を導入する。反応性混合
ガスは、一酸化炭素（以下CO）と酸素（O2）ガ
スを用いた。 In FIG. 1 showing a first embodiment, Fe metal is vacuum-deposited on a glass substrate 1 and fixed in a brass cooling tank 2 as shown in the same figure. Note that here, as a method for forming the metal film, a Ni film or the like may be formed using sputtering. The temperature of the cooling section 3 can be set arbitrarily from liquid nitrogen temperature (77〓) to room temperature (300〓). Methyl alcohol and dry ice were used as the refrigerant 3', and the temperature was measured at -10°C, and a copper-constantan thermocouple 4 was used to measure the temperature.
The side of the deposited Fe thin film 5 is placed in a room temperature atmosphere, and a high temperature mixed gas 6 is introduced from below. The reactive mixed gas used was carbon monoxide (hereinafter referred to as CO) and oxygen (O 2 ) gas.
反応性ガスは第２図に示すようにCO、O2とも
別個のノズル２１から供給する。ガスはレギユレ
ーターで圧力調整後、流量計で流量調整を行い管
２２を通つて加熱部２３に導びかれる。加熱部２
３内はセラミツクヒーター２４とＣ−Ａ熱電対２
５で構成され、常温から800℃の温度範囲まで加
熱される。ガス流量は酸素ガス0.5／min一酸
化炭素ガス0.1／minで、ガス温度300℃で行な
つた。 The reactive gases are supplied from separate nozzles 21 for both CO and O 2 as shown in FIG. After the pressure of the gas is adjusted by a regulator, the flow rate is adjusted by a flow meter, and the gas is led to the heating section 23 through the pipe 22. Heating section 2
Inside 3 is a ceramic heater 24 and a C-A thermocouple 2.
5 and is heated from room temperature to 800℃. The gas flow rate was 0.5/min for oxygen gas and 0.1/min for carbon monoxide gas, and the gas temperature was 300°C.
次に本発明の第２の実施例における金属酸化物
薄膜の製造方法について説明する。Fe金属を真
空蒸着した高分子フイルム３１を第３図に示すよ
うにフイルム送り軸３２にセツトし、クーリング
キヤン３３を経てフイルム巻取り軸３４で巻取
る。鉄金属の蒸着は通常の電子ビームを用いて高
分子フイルム面に蒸着した。クーリングキヤン３
３は500φ中空円筒の表面にハードクロムを鏡面
仕上にし、高分子フイルム３１の蒸着面と反対側
が密着するようにした。温度調整は冷媒を用い
て、常温から−30℃まで可変出来るようにした。
フイルム基板の蒸着面側の下方には、第１の実施
例の場合と同様の構造の高温の反応性ガスの供給
機能を備えている。すなわち、第４図に示すよう
にガスノズルが多数の孔を有し、蒸着フイルムの
幅方向に均一に分布させた。ガス供給部４１、加
熱部４２、及び温度調整部４３の機能は第１の実
施例の場合と同様である。本実施例では、フイル
ム送り速度10ｍ／min、COガス0.5／min、O2
ガス２／min、反応性ガス温度300℃の条件下
で金属酸化物薄膜の製造を行つた。 Next, a method for manufacturing a metal oxide thin film in a second embodiment of the present invention will be described. A polymer film 31 on which Fe metal is vacuum-deposited is set on a film feed shaft 32 as shown in FIG. Iron metal was deposited on the surface of the polymer film using an ordinary electron beam. Cooling Can 3
In No. 3, the surface of a 500φ hollow cylinder was mirror-finished with hard chrome, so that the side opposite to the vapor-deposited surface of the polymer film 31 was in close contact. The temperature can be adjusted from room temperature to -30℃ using a refrigerant.
A high temperature reactive gas supply function having the same structure as in the first embodiment is provided below the vapor deposition surface of the film substrate. That is, as shown in FIG. 4, the gas nozzle had a large number of holes, which were uniformly distributed in the width direction of the deposited film. The functions of the gas supply section 41, heating section 42, and temperature adjustment section 43 are the same as in the first embodiment. In this example, the film feed speed was 10 m/min, CO gas was 0.5/min, and O 2
A metal oxide thin film was produced under the conditions of a gas flow rate of 2/min and a reactive gas temperature of 300°C.
なお、第２の実施例において、鉄金属の蒸着の
代わりにコバルト金属、ニツケル金属、クロム金
属、チタン金属、SiO金属を真空蒸着法により高
分子フイルム面に形成することもできる。 In the second embodiment, instead of vapor depositing iron metal, cobalt metal, nickel metal, chromium metal, titanium metal, or SiO metal can also be formed on the surface of the polymer film by vacuum evaporation.
また、本実施例では高温の反応性ガスに水素
（H2）ガスと酸素ガス（O2）を用い、コバルト金
属を真空蒸着する場合が考えられる。 Further, in this embodiment, a case is considered in which cobalt metal is vacuum-deposited using hydrogen (H 2 ) gas and oxygen gas (O 2 ) as high-temperature reactive gases.
さらに、鉄金属を抵抗加熱法で高分子フイルム
面に蒸着することもできる。 Furthermore, ferrous metal can also be deposited on the surface of the polymer film using a resistance heating method.
次に本発明の前記第１および第２の実施例の効
果を調べるために、Ｘ線回折およびESCAによる
表面状態を調べた。その結果例えば第１の実施例
では蒸着金属はFeから、Fe2O3の鉄化合物に変化
していることが解つた。 Next, in order to examine the effects of the first and second embodiments of the present invention, the surface conditions were examined by X-ray diffraction and ESCA. As a result, it was found that, for example, in the first example, the deposited metal changed from Fe to an iron compound of Fe 2 O 3 .
次に、第２の実施例においてコバルト金属を用
いた場合には、表面層のみがCoからCo3O4に変化
しており、２〜３分子層程度までがCo3O4の酸化
状態であり、基板側であるフイルム側に入るに従
つてCoOの結晶構造になつていることが解つた。
蒸着膜の酸化状態は、反応ガス流量が多い程、ま
た、反応熱が多い程、ガス温度が高い程、蒸着膜
の内側まで進んでいることが解つた。ガス温度
は、蒸着膜の表面状態により異なるが、120℃〜
400℃位いが最適であり、反応性ガス流量も0.1
／min〜10／minが良く、酸素ガス過剰雰囲
気でなければならない。冷媒との接触時間は10-3
〜１秒程度が最適である。 Next, when cobalt metal was used in the second example, only the surface layer changed from Co to Co 3 O 4 , and up to about 2 to 3 molecular layers were in the oxidized state of Co 3 O 4 . It was found that the crystal structure changed to CoO as it entered the film side, which is the substrate side.
It was found that the oxidation state of the deposited film progresses to the inside of the deposited film as the reaction gas flow rate increases, as the reaction heat increases, and as the gas temperature increases. The gas temperature varies depending on the surface condition of the deposited film, but is 120℃~
The optimal temperature is around 400℃, and the reactive gas flow rate is 0.1
/min to 10/min, and the atmosphere must be rich in oxygen gas. Contact time with refrigerant is 10 -3
~1 second is optimal.
他のニツケルクロム、チタン、SiOの場合につ
いても同様に金属酸化物になつていることが確認
できた。 It was confirmed that other nickel chromium, titanium, and SiO were also converted into metal oxides.
本発明の金属酸化物薄膜の製造方法は無機又は
高分子フイルム基板面に真空蒸着又はスパツタリ
ングして形成した金属の表面層を高温加熱した反
応性混合ガスで局部反応させることにより、再現
性よく金属酸化物層が得られる効果がある。また
基板を冷媒で冷却しているため熱による基板の改
質を防ぐことができる。 The method for producing a metal oxide thin film of the present invention involves locally reacting a metal surface layer formed by vacuum evaporation or sputtering on an inorganic or polymeric film substrate surface with a reactive mixed gas heated at high temperature. This has the effect of providing an oxide layer. Furthermore, since the substrate is cooled with a refrigerant, modification of the substrate due to heat can be prevented.
第１図は本発明の第１の実施例における金属酸
化物薄膜の製造方法を実施する装置の構成を示す
図、第２図は同装置の要部を示す図、第３図は本
発明の第２の実施例における金属酸化物薄膜の製
造方法を実施する装置の構成を示す図、第４図は
同装置の要部を示す図である。
１……ガラス基板、２……冷却槽、３……冷却
部、３′……冷媒、５……Fe薄膜、２１……ノズ
ル、２３……加熱部、２４……セラミツクヒータ
ー、３１……高分子フイルム、３３……クーリン
グキヤン、４１……ガス供給部、４２……加熱
部、４３……温度調整部。
FIG. 1 is a diagram showing the configuration of an apparatus for carrying out the method for manufacturing a metal oxide thin film according to the first embodiment of the present invention, FIG. 2 is a diagram showing the main parts of the same apparatus, and FIG. FIG. 4 is a diagram showing the configuration of an apparatus for carrying out the method for manufacturing a metal oxide thin film in the second embodiment, and FIG. 4 is a diagram showing the main parts of the apparatus. DESCRIPTION OF SYMBOLS 1...Glass substrate, 2...Cooling tank, 3...Cooling part, 3'...Refrigerant, 5...Fe thin film, 21...Nozzle, 23...Heating part, 24...Ceramic heater, 31... Polymer film, 33... Cooling can, 41... Gas supply section, 42... Heating section, 43... Temperature adjustment section.
Claims (1)
反応性混合ガスで加熱するとともに、前記基板の
他方主面を冷却する工程を有することを特徴とす
る金属酸化物薄膜の製造方法。1. A method for producing a metal oxide thin film, comprising the steps of heating a metal thin film formed on one main surface of a substrate with a high-temperature reactive mixed gas, and cooling the other main surface of the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4096381A JPS57156030A (en) | 1981-03-20 | 1981-03-20 | Production of thin film of metallic oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4096381A JPS57156030A (en) | 1981-03-20 | 1981-03-20 | Production of thin film of metallic oxide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57156030A JPS57156030A (en) | 1982-09-27 |
| JPH0122810B2 true JPH0122810B2 (en) | 1989-04-27 |
Family
ID=12595133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4096381A Granted JPS57156030A (en) | 1981-03-20 | 1981-03-20 | Production of thin film of metallic oxide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57156030A (en) |
-
1981
- 1981-03-20 JP JP4096381A patent/JPS57156030A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57156030A (en) | 1982-09-27 |
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