JPH0122607B2 - - Google Patents
Info
- Publication number
- JPH0122607B2 JPH0122607B2 JP12780680A JP12780680A JPH0122607B2 JP H0122607 B2 JPH0122607 B2 JP H0122607B2 JP 12780680 A JP12780680 A JP 12780680A JP 12780680 A JP12780680 A JP 12780680A JP H0122607 B2 JPH0122607 B2 JP H0122607B2
- Authority
- JP
- Japan
- Prior art keywords
- transparent electrode
- transparent
- electrode layer
- insulating film
- transparent insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 239000003960 organic solvent Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 239000011230 binding agent Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 150000002736 metal compounds Chemical class 0.000 claims description 2
- 238000005979 thermal decomposition reaction Methods 0.000 claims description 2
- 238000001035 drying Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 238000009413 insulation Methods 0.000 claims 1
- 238000004898 kneading Methods 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 150000003961 organosilicon compounds Chemical class 0.000 description 3
- QUKGYYKBILRGFE-UHFFFAOYSA-N benzyl acetate Chemical compound CC(=O)OCC1=CC=CC=C1 QUKGYYKBILRGFE-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910003437 indium oxide Inorganic materials 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 229940007550 benzyl acetate Drugs 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical compound CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/061—Etching masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Structure Of Printed Boards (AREA)
Description
【発明の詳細な説明】
本発明は、液晶表示装置に使用される所定の形
状をした透明電極を表面に有する透明電極基板の
製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a transparent electrode substrate having a transparent electrode having a predetermined shape on its surface, which is used in a liquid crystal display device.
第１図は、一般的な液晶表示装置に使用される
透明電極基板の側断面図であり、透明ガラス基板
などの透明絶縁基板１上に、所定形状の透明電極
層２を形成し、該透明電極層２上に、液晶の配向
処理用に透明絶縁膜４を被覆した構造になつてい
る。 FIG. 1 is a side sectional view of a transparent electrode substrate used in a general liquid crystal display device, in which a transparent electrode layer 2 of a predetermined shape is formed on a transparent insulating substrate 1 such as a transparent glass substrate, and the transparent The electrode layer 2 is coated with a transparent insulating film 4 for liquid crystal alignment processing.
従来の透明電極基板製造方法は、まず透明絶縁
基板１の一面全面に、酸化インジウム系の透明電
極層を真空蒸着法、スパツタリング法等により形
成し、その上面にフオトレジストをスクリーン印
刷法により、所定のパターンに形成した後、透明
電極層をエツチングし、しかる後、フオトレジス
トを除去して、所定形状の透明電極層２を形成し
ていた。次に、該透明電極層２上に、液晶の配向
材であるSiO2膜、TiO2膜等の透明絶縁膜３をコ
ートして配向処理を行い透明電極基板を製作して
いた。しかし、叙上の方法では、清浄であるべき
透明電極層２の表面が、フオトレジストをコート
するため汚れ、洗浄を慎重に行つても、よごれを
完全に除外することは困難で、その為に配向材
（絶縁材）を、均一にコートできなかつたり、又
液晶表示装置として完成しても、長期間後には、
液晶の配向乱れが生じ、信頼性に欠けるという欠
点があつた。 In the conventional transparent electrode substrate manufacturing method, first, an indium oxide-based transparent electrode layer is formed on the entire surface of a transparent insulating substrate 1 by a vacuum evaporation method, a sputtering method, etc., and a photoresist is coated on the top surface in a predetermined manner by a screen printing method. After forming a pattern, the transparent electrode layer is etched, and then the photoresist is removed to form a transparent electrode layer 2 having a predetermined shape. Next, a transparent insulating film 3 such as a SiO 2 film or a TiO 2 film, which is an alignment material for liquid crystal, is coated on the transparent electrode layer 2 and an alignment treatment is performed to produce a transparent electrode substrate. However, in the method described above, the surface of the transparent electrode layer 2, which should be clean, gets dirty because it is coated with photoresist, and even if cleaning is performed carefully, it is difficult to completely eliminate the dirt. If the alignment material (insulating material) cannot be coated uniformly, or even if the liquid crystal display device is completed, after a long period of time,
The problem was that the alignment of the liquid crystals was disturbed, resulting in a lack of reliability.
本発明は、叙上の欠点を解消し、信頼性の高い
液晶表示装置を提供するためになされたものであ
る。 The present invention has been made in order to eliminate the above-mentioned drawbacks and provide a highly reliable liquid crystal display device.
本発明の特徴は、作来のフオトレジストの代り
に、熱分解によりSiO2、TiO2などの金属酸化物
となる有機ケイ素化合物、有機チタン化合物など
の有機金属化合物を含む有機物膜をエツチングレ
ジストとして使用したことである。 A feature of the present invention is that instead of a conventional photoresist, an organic film containing an organometallic compound such as an organosilicon compound or an organotitanium compound, which becomes a metal oxide such as SiO 2 or TiO 2 by thermal decomposition, is used as an etching resist. That is what I used.
第２図は、本発明による透明電極基板の製造工
程を示す図で、透明電極基板製造にあたつては、
まず、ａ図に示すように、透明ガラス基板１の一
面全面に、酸化インジウム系透明電極層２ａを真
空蒸着法又はスパツタリング法等により形成す
る。次に、有機ケイ素化合物、有機チタン化合物
等の有機化合物と、ニトロセルローズ、エチルセ
ルローズ等のセルローズ系有機バインダーと、適
当な有機溶媒を均一分散混合して、粘度が30000
〜50000cpsになるように作成したスクリーン印刷
可能なペーストを用い、ｂ図に示すごとく、前記
透明電極層２ａ上に、スクリーン印刷により所定
の形状に塗布し、150〜180℃で乾燥固着させ、有
機金属化合物を含む有機物膜３ａを形成する。な
お、有機金属化合物としては、有機ケイ素化合物
として、テトラエチルシリケート、テトラメチル
シリケート等があり、有機チタン化合物として、
テトラプロピルチタネート、テトラブチルチタネ
ート等がある。又、有機溶媒としては、ベンジル
アルコール、酢酸ベンジル等の有機溶媒が適当で
きる。次いで、希塩酸、希硝酸などの溶液を用い
て、前記透明電極層２ａの表面に前記有機物膜３
ａを設けた部分以外をエツチングにより除去し、
ｃ図に示すように、所定形状の透明電極層２を形
成した後、ガラス基板１の融点（ソーダガラスで
は約500℃）以下の温度で焼成し、前記有機物膜
３ａを熱分解させ、ｄ図に示すようにSiO2、
TiO2などの金属酸化物を組成とする透明絶縁膜
３を形成する。なお、有機物膜３ａ中に含まれる
有機バインダー及有機溶媒は、焼成によりガス化
して解離し、透明絶縁膜３中には含まれない。最
後に、透明ガラス基板の前記透明電極層２及前記
透明絶縁膜３を形成した面全面に、SiO2、TiO2
などの金属酸化物からなる透明絶縁被膜４をコー
トして、透明電極基板を完全する。 FIG. 2 is a diagram showing the manufacturing process of a transparent electrode substrate according to the present invention.
First, as shown in Fig. a, an indium oxide-based transparent electrode layer 2a is formed on the entire surface of a transparent glass substrate 1 by a vacuum evaporation method, a sputtering method, or the like. Next, an organic compound such as an organosilicon compound or an organotitanium compound, a cellulose-based organic binder such as nitrocellulose or ethylcellulose, and an appropriate organic solvent are uniformly dispersed and mixed until the viscosity is 30,000.
Using a screen-printable paste prepared to give ~50,000 cps, as shown in Figure b, it is applied onto the transparent electrode layer 2a in a predetermined shape by screen printing, dried and fixed at 150-180°C, and then An organic film 3a containing a metal compound is formed. In addition, as organometallic compounds, there are tetraethyl silicate, tetramethyl silicate, etc. as organosilicon compounds, and as organotitanium compounds,
Examples include tetrapropyl titanate and tetrabutyl titanate. Further, as the organic solvent, organic solvents such as benzyl alcohol and benzyl acetate can be suitably used. Next, the organic film 3 is formed on the surface of the transparent electrode layer 2a using a solution such as dilute hydrochloric acid or dilute nitric acid.
Remove the part other than the part with a by etching,
As shown in Figure c, after forming the transparent electrode layer 2 in a predetermined shape, it is fired at a temperature below the melting point of the glass substrate 1 (approximately 500°C for soda glass) to thermally decompose the organic film 3a. SiO 2 , as shown in
A transparent insulating film 3 whose composition is a metal oxide such as TiO 2 is formed. Note that the organic binder and organic solvent contained in the organic substance film 3a are gasified and dissociated by firing, and are not contained in the transparent insulating film 3. Finally, SiO 2 , TiO 2 is applied to the entire surface of the transparent glass substrate on which the transparent electrode layer 2 and the transparent insulating film 3 are formed.
A transparent insulating film 4 made of a metal oxide such as the following is coated to complete the transparent electrode substrate.
即ち、透明絶縁膜３と透明絶縁被膜４とは全く
同一の組成物にて形成されている。 That is, the transparent insulating film 3 and the transparent insulating coating 4 are formed of exactly the same composition.
叙上の通り、本発明によれば透明電極層表面の
フオトレジストによる汚れは、完全になく、透明
絶縁被膜に安定な配向処理が行なわれ、従つて液
晶の配向乱れのない信頼性の高い液晶表示装置を
提供できるという大きなメリツトがある。又、フ
オトレジスト除去等の複雑な工程をなくすること
ができる利点もある。 As described above, according to the present invention, the surface of the transparent electrode layer is completely free from stains caused by the photoresist, and the transparent insulating film is subjected to stable alignment treatment, resulting in a highly reliable liquid crystal without disordered alignment of the liquid crystal. This has the great advantage of being able to provide a display device. Another advantage is that complicated steps such as photoresist removal can be eliminated.
第１図は、一般的な透明電極基板の構造を示す
部分側断面図、第２図は、本発明による透明電極
基板製造の工程図である。
１：透明絶縁基板（透明ガラス基板）、２：所
定形状の透明電極層、２ａ：透明電極層、３：透
明絶縁膜、３ａ：有機物膜、４：透明絶縁被膜。
FIG. 1 is a partial side sectional view showing the structure of a general transparent electrode substrate, and FIG. 2 is a process diagram of manufacturing the transparent electrode substrate according to the present invention. 1: Transparent insulating substrate (transparent glass substrate), 2: Transparent electrode layer of predetermined shape, 2a: Transparent electrode layer, 3: Transparent insulating film, 3a: Organic film, 4: Transparent insulating coating.
Claims (1)
形成し、該透明電極層上に、透明絶縁膜を被覆し
てなる透明電極基板の製造方法において、透明絶
縁基板の一面全面に、透明電極層を形成する工程
と、熱分解により透明絶縁膜組成物である金属酸
化物となる有機金属化合物と、有機溶媒と、有機
バインダーとを混練して得られるペーストを、ス
クリーン印刷法により、透明電極層上に、所定の
形状に、塗布し、乾燥、固着させる工程と、透明
電極層を前記所定の形状にエツチングする工程
と、所定の温度で熱処理し、金属酸化物を組成物
とした透明絶縁膜を、透明電極層上に形成させる
工程と、さらに該透明絶縁膜上に、金属酸化物か
らなる透明絶縁被膜をコートする工程とからなる
ことを特徴とする透明電極基板製造方法。1. A method for manufacturing a transparent electrode substrate, in which a transparent electrode layer of a predetermined shape is formed on a transparent insulating substrate, and a transparent insulating film is coated on the transparent electrode layer. A paste obtained by kneading an organic metal compound that becomes a metal oxide, which is a transparent insulating film composition by thermal decomposition, an organic solvent, and an organic binder, is formed into a transparent electrode by a screen printing method. A process of coating, drying, and fixing the transparent electrode layer in a predetermined shape on the layer, a process of etching the transparent electrode layer into the predetermined shape, and a heat treatment at a predetermined temperature to form a transparent insulation made of a metal oxide composition. A method for manufacturing a transparent electrode substrate, comprising the steps of forming a film on a transparent electrode layer, and further coating a transparent insulating film made of a metal oxide on the transparent insulating film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12780680A JPS5752024A (en) | 1980-09-13 | 1980-09-13 | Manufacture of transparent electrode substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12780680A JPS5752024A (en) | 1980-09-13 | 1980-09-13 | Manufacture of transparent electrode substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5752024A JPS5752024A (en) | 1982-03-27 |
| JPH0122607B2 true JPH0122607B2 (en) | 1989-04-27 |
Family
ID=14969132
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12780680A Granted JPS5752024A (en) | 1980-09-13 | 1980-09-13 | Manufacture of transparent electrode substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5752024A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS606943A (en) * | 1983-06-25 | 1985-01-14 | Futaba Corp | Photosensitive composition and formation of micropattern by using it |
| JPS61184532A (en) * | 1985-02-13 | 1986-08-18 | Tokyo Denshi Kagaku Kk | Photosensitive comosition |
| JP2548314B2 (en) * | 1988-07-22 | 1996-10-30 | 松下電器産業株式会社 | Manufacturing method of thermal head |
| JP4781776B2 (en) * | 2005-10-24 | 2011-09-28 | 三菱電機株式会社 | WIRING BOARD, DISPLAY DEVICE, AND WIRING BOARD MANUFACTURING METHOD |
-
1980
- 1980-09-13 JP JP12780680A patent/JPS5752024A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5752024A (en) | 1982-03-27 |
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