JPH01224728A - Nonlinear two-terminal element - Google Patents

Nonlinear two-terminal element

Info

Publication number
JPH01224728A
JPH01224728A JP63049826A JP4982688A JPH01224728A JP H01224728 A JPH01224728 A JP H01224728A JP 63049826 A JP63049826 A JP 63049826A JP 4982688 A JP4982688 A JP 4982688A JP H01224728 A JPH01224728 A JP H01224728A
Authority
JP
Japan
Prior art keywords
electrode layer
nonlinear
thin film
metal oxide
terminal element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63049826A
Other languages
Japanese (ja)
Inventor
Sugiro Shimoda
杉郎 下田
Yukihiro Hosaka
幸宏 保坂
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
Japan Synthetic Rubber Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Synthetic Rubber Co Ltd filed Critical Japan Synthetic Rubber Co Ltd
Priority to JP63049826A priority Critical patent/JPH01224728A/en
Publication of JPH01224728A publication Critical patent/JPH01224728A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/1365Active matrix addressed cells in which the switching element is a two-electrode device

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Liquid Crystal (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)

Abstract

PURPOSE:To facilitate extension of the area of a display panel and to simplify the producing method by forming a metal oxide thin film of a nonlinear two- terminal element consisting of three layers, namely, an electrode layer, the metal oxide thin film, and another electrode layer by the electrolytic deposition method. CONSTITUTION:A first electrode layer 11, a thin film layer 12 which is formed on the first electrode layer 11 by the electrolytic deposition method and contains a metal oxide, and a second electrode layer 14 formed on the second electrode layer 14 containing the metal oxide are provided. First and second electrode layers 11 and 14 consist of conductive films, and metallic thin films consisting of Cr, Ni, or the like formed by various methods such as the sputtering method and the spray method, transparent conductive films consisting of ITO (indium tin oxide), In2O3, or the like, or Ag paste, Cu paste, or the like where metallic particles are dispersed in a binder can be used as these conductive films. Thus, this method copes with mass production of elements in the active matrix system for large-area display, and the nonlinear two-terminal element is obtained which is produced by a small-sized equipment and has a low production cost.

Description

【発明の詳細な説明】 [産業上の利用分野] 本発明は液晶表示パネル等、特にアクティブマトリック
ス方式のスイッチング素子に好適な非線形2端子素子に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a nonlinear two-terminal element suitable for liquid crystal display panels and the like, particularly active matrix switching elements.

[従来の技術] 液晶表示パネル等の表示パネルのコントラスト比を低下
させることなく、画素数を増加させる方法として、各画
素に薄膜トランジスタまたは非線形2端子素子等のスイ
ッチング素子を設けたアクティブマトリックス方式が検
討されてきた。
[Prior Art] As a method of increasing the number of pixels without reducing the contrast ratio of a display panel such as a liquid crystal display panel, an active matrix method in which each pixel is provided with a switching element such as a thin film transistor or a nonlinear two-terminal element is being considered. It has been.

特に非線形2端子素子を用いたアクティブマトリックス
方式は、薄膜トランジスタを用いたアクティブマトリッ
クス方式と比較して、素子の製造プロセスが簡単である
ことから高い歩留りが期待できる。
In particular, an active matrix method using a nonlinear two-terminal element can be expected to have a higher yield because the manufacturing process of the element is simpler than an active matrix method using a thin film transistor.

第3図(A)に非線形2端子素子をスイッチング素子に
用いた液晶表示パネルの断面図を、第3図(B)にその
等価回路図を示す。この表示バネルは、電4膜−絶縁膜
−電導膜、または電導膜−半導体膜一電導膜の3層構造
よりなる。図中、21はガラス基板、22は透明電極、
23は偏光膜、24はTN(ツィステッド・ネマティッ
ク)液晶、25は配向膜、26は電極層、27は絶縁体
層または半導体層である。
FIG. 3(A) shows a cross-sectional view of a liquid crystal display panel using a nonlinear two-terminal element as a switching element, and FIG. 3(B) shows its equivalent circuit diagram. This display panel has a three-layer structure of a conductive film, an insulating film, and a conductive film, or a conductive film, a semiconductor film, and a conductive film. In the figure, 21 is a glass substrate, 22 is a transparent electrode,
23 is a polarizing film, 24 is a TN (twisted nematic) liquid crystal, 25 is an alignment film, 26 is an electrode layer, and 27 is an insulating layer or a semiconductor layer.

表示パネルに用いられる非線形2端子素子としては導電
膜−Ta、、05(絶縁膜)−電導膜からなる構成のM
TM素子が知られている(特開昭60−106181号
公報)。
As a nonlinear two-terminal element used in a display panel, an M having a structure consisting of a conductive film - Ta, 05 (insulating film) - a conductive film is used.
A TM element is known (Japanese Unexamined Patent Publication No. 106181/1981).

また、水素化アモルファスシリコン(a−5i:H)(
特開昭60−138515号公報)、水素化アモルファ
スシリコンカーバイト(a−5iCx:H)  (特開
昭60−50982号公報)等の半導体膜を電導膜の間
に形成した3層構造よりなる非線形2端子素子や、これ
らの非線形2端子素子をリング接続したものが検討され
てきた。
In addition, hydrogenated amorphous silicon (a-5i:H) (
It consists of a three-layer structure in which a semiconductor film such as JP-A No. 60-138515) or hydrogenated amorphous silicon carbide (a-5iCx:H) (JP-A No. 60-50982) is formed between conductive films. Nonlinear two-terminal elements and devices in which these nonlinear two-terminal elements are connected in a ring have been studied.

[発明が解決しようとする課題] しかしながら、MIM素子では、非線形特性を得るため
に、絶縁膜の膜厚を500〜600Å以下とする必要が
あり、このような極薄膜を大面積にわたって均一に形成
することは困難である。
[Problem to be solved by the invention] However, in order to obtain nonlinear characteristics in MIM devices, the thickness of the insulating film must be 500 to 600 Å or less, and it is difficult to uniformly form such an extremely thin film over a large area. It is difficult to do so.

一方、a−5i: H,a −5iCx: H,等の半
導体膜を用いた非線形2端子素子を製造するためには、
スパッタリング法、CVD法等を用いる必要があるため
に真空装置を用いなければならない。従って、大面積表
示用のアクティブマトリックス方式の表示パネルを大量
に製造するために大規模な設備を必要とし、また製造コ
ストも増加する。
On the other hand, in order to manufacture a nonlinear two-terminal device using semiconductor films such as a-5i: H, a-5iCx: H, etc.
Since it is necessary to use a sputtering method, a CVD method, etc., a vacuum device must be used. Therefore, large-scale equipment is required to mass-manufacture active matrix type display panels for large-area display, and manufacturing costs also increase.

そこで、本発明の目的は、上述のような問題点を解消し
、大面積表示用のアクティブマトリックス方式の素子の
大量生産に対処することもでき、小型の設備で製造でき
、製造コストが庶価な非線形2端子素子を提供すること
にある。
SUMMARY OF THE INVENTION Therefore, an object of the present invention is to solve the above-mentioned problems, to be able to cope with the mass production of active matrix type elements for large-area displays, to be able to be manufactured with small equipment, and to have low manufacturing costs. The object of the present invention is to provide a nonlinear two-terminal element.

[課題を解決するための手段] このような目的を達成するために、本発明は第1の電極
層と、第1の電極層上に、電解析出法によって形成され
た金属酸化物を含有する薄膜層と、該金属酸化物を含有
する薄膜上に形成された第2の電極層とを具備してなる
非線形2端子素子を)是イ共するものである。
[Means for Solving the Problems] In order to achieve such an object, the present invention includes a first electrode layer and a metal oxide containing a metal oxide formed by electrolytic deposition on the first electrode layer. and a second electrode layer formed on the thin film containing the metal oxide.

本発明の非線形2端子素子の基板としては、例えば、ガ
ラス、エポキシ樹脂、ポリエステル、ポリウレタン、ポ
リイミド等の絶縁基板を使用することができる。
As the substrate of the nonlinear two-terminal element of the present invention, for example, an insulating substrate made of glass, epoxy resin, polyester, polyurethane, polyimide, etc. can be used.

非線形2端子素子の第1および第2の電極層は電導膜か
らなり、この電導膜として、例えばスパッタ法、気相法
、無電解メツキ法、スプレー法等の各種の方法で形成し
たCr、Ti 、八n 、Ni等の金属薄膜、TTO(
酸化インジウムスズ) 、In2O5等の透明電導膜、
金属粒子をバインダ中に分散させたAgペースト、Au
ペースト、Cuペースト等が使用できる。なお、第1お
よび第2の電極層の厚さはそれぞれ、通常0.1〜5.
0μmである。
The first and second electrode layers of the nonlinear two-terminal element are made of conductive films, such as Cr, Ti, etc., formed by various methods such as sputtering, vapor phase, electroless plating, and spraying. , 8n, Ni, etc. metal thin films, TTO (
Indium tin oxide), transparent conductive films such as In2O5,
Ag paste with metal particles dispersed in binder, Au
Paste, Cu paste, etc. can be used. Note that the thickness of the first and second electrode layers is usually 0.1 to 5.
It is 0 μm.

金属酸化物を含有する薄膜層(以下、単に「金属酸化物
薄膜」という)を形成する方法としては大面積の薄膜層
が容易に形成できる点で電解析出法を用いることができ
る。
As a method for forming a thin film layer containing a metal oxide (hereinafter simply referred to as a "metal oxide thin film"), an electrolytic deposition method can be used since a thin film layer with a large area can be easily formed.

電解析出法によって形成できる金属酸化物としては酸化
鉛、酸化銅、酸化イリジウム、酸化モリブデン、酸化タ
ングステン等が挙げられ、これらのうちでは、酸化鉛が
好ましい。例えば、電解析出法による酸化鉛の形成には
、通常■−酸化鉛0.1〜3モル/Il、■塩基性無機
化合物、例えば、水酸化カリウム、水酸、化ナトリウム
、塩基性有機化合物、例えば、アンモニア、トリエチル
アミン等の塩基性化合物0.1〜10モル/lおよび■
塩基性溶液下において鉛と錯体形成が可能な配位子化合
物0.1〜5モル/Iを溶解させた濃度0.1〜3モル
/It程度の金属錯体水溶液が電解液として用いられる
Examples of metal oxides that can be formed by electrolytic deposition include lead oxide, copper oxide, iridium oxide, molybdenum oxide, and tungsten oxide. Among these, lead oxide is preferred. For example, for the formation of lead oxide by electrolytic deposition, usually 1 - 0.1 to 3 mol/Il of lead oxide, 2 basic inorganic compounds such as potassium hydroxide, hydroxide, sodium oxide, basic organic compounds, etc. , for example, 0.1 to 10 mol/l of basic compounds such as ammonia and triethylamine, and ■
An aqueous metal complex solution having a concentration of about 0.1 to 3 mol/It in which 0.1 to 5 mol/I of a ligand compound capable of forming a complex with lead is dissolved in a basic solution is used as the electrolytic solution.

この電解液に使用される配位子化合物としてはアスパラ
ギン酸、エチレンジアミンニ酢酸、エチレンジアミン四
酢酸、プロピレンジアミン四酢酸、イミノニ酢酸、゛ヤ
ロン酸、ニトリロ三酢酸、またはこれら配位子化合物の
ナトリウム塩等が用いられ、塩基性水溶液中に可溶な金
属錯体が形成できれば配位子化合物は特に制限されない
Ligand compounds used in this electrolyte include aspartic acid, ethylenediaminediacetic acid, ethylenediaminetetraacetic acid, propylenediaminetetraacetic acid, iminodiacetic acid, diaronic acid, nitrilotriacetic acid, and sodium salts of these ligand compounds. is used, and the ligand compound is not particularly limited as long as it can form a metal complex soluble in a basic aqueous solution.

本発明の非線形2端子素子を電解析出法によって製造す
るには、まず前記の方法により第1の電極層を形成した
基板を前記金属錯体水溶液に浸漬し、白金、炭素、ステ
ンレス等を陰極として設置し、第1の電極層を陽極とし
て電圧を印加することにより金属酸化物を第1の電極層
上に析出させ、金属酸化物薄膜を形成する。
To manufacture the nonlinear two-terminal device of the present invention by electrolytic deposition, first, the substrate on which the first electrode layer is formed by the method described above is immersed in the metal complex aqueous solution, and platinum, carbon, stainless steel, etc. is used as a cathode. A metal oxide is deposited on the first electrode layer by applying a voltage using the first electrode layer as an anode, thereby forming a metal oxide thin film.

電解析出法において、陰極と陽極間に印加する電圧は通
常0,1〜25V (DC) 、好ましくは0.5〜1
5V (DC)であり、酸化鉛を析出させる電極層に流
れる電流の電流密度は通常0.01〜50m A 7c
m2、好ましくは0.1〜20m A / Cm2であ
る。
In the electrolytic deposition method, the voltage applied between the cathode and the anode is usually 0.1 to 25 V (DC), preferably 0.5 to 1
5V (DC), and the current density of the current flowing through the electrode layer that deposits lead oxide is usually 0.01 to 50m A 7c
m2, preferably 0.1-20 mA/Cm2.

また電解液の温度は電解液が凝固もしくは沸騰しない範
囲であればいずれの温度でもよいが、20℃〜70℃の
範囲にあることが好ましい。
Further, the temperature of the electrolytic solution may be any temperature as long as the electrolytic solution does not solidify or boil, but it is preferably in the range of 20°C to 70°C.

以上に述べた条件による電解析出法によって、比抵抗1
0−I〜104Ω・cmの酸化鉛薄膜層が形成される。
By the electrolytic deposition method under the conditions described above, a resistivity of 1
A lead oxide thin film layer of 0-I to 104 Ω·cm is formed.

またこの酸化鉛薄膜の膜厚は通常0.01〜100μm
1好ましくはo、i〜10μmであり、膜厚が薄すぎる
と薄膜に欠陥ができやすくなり、−膜厚すぎると非線形
二端子素子の抵抗が大きくなりすぎる。
The thickness of this lead oxide thin film is usually 0.01 to 100 μm.
1 is preferably o, i to 10 μm; if the film thickness is too thin, defects will easily occur in the thin film, and if the film is too thick, the resistance of the nonlinear two-terminal element will become too large.

なお、得られた酸化鉛薄膜により大きな非線形特性を付
与するためには、陰極還元処理を行うことが好ましい。
Note that in order to impart greater nonlinear characteristics to the obtained lead oxide thin film, it is preferable to perform cathodic reduction treatment.

この陰極還元処理は、得られた金属酸化物薄膜中の酸素
の量を調節する操作であり、酸化鉛を完全に還元してし
まうことは好ましくない。
This cathodic reduction treatment is an operation for adjusting the amount of oxygen in the obtained metal oxide thin film, and it is not preferable to completely reduce lead oxide.

次に酸化鉛薄膜の陰極還元処理の方法について述べる。Next, a method for cathodic reduction treatment of lead oxide thin films will be described.

陰極還元処理埋は、クロム酸、硫酸、しゅう酸、酒石酸
、塩酸、硝酸、リン酸、はう酸、リン酸アンモニウム、
はう酸アンモニウム、酒石酸アンモニウム、水酸化アン
モニウム、水酸化ナトリウム、水酸化カリウム等が、例
えば0.1〜10重量%、好ましくは1〜5重量%溶解
した水溶液を電解液として使用する。
Cathodic reduction treatment includes chromic acid, sulfuric acid, oxalic acid, tartaric acid, hydrochloric acid, nitric acid, phosphoric acid, oxalic acid, ammonium phosphate,
An aqueous solution in which ammonium oxalate, ammonium tartrate, ammonium hydroxide, sodium hydroxide, potassium hydroxide, etc. are dissolved, for example, from 0.1 to 10% by weight, preferably from 1 to 5% by weight, is used as the electrolytic solution.

この電解液中に酸化鉛薄膜を形成した基板を浸漬し、白
金、ステンレス、炭素化合物などを陽極、酸化鉛薄膜を
陰極として電圧を印加する。
A substrate with a lead oxide thin film formed thereon is immersed in this electrolytic solution, and a voltage is applied using platinum, stainless steel, a carbon compound, or the like as an anode and the lead oxide thin film as a cathode.

陰極還元処理時の陰極と陽極間に印加する電圧は通常0
.1〜1.5 V (Dに) 、好ましくは0.5〜1
.3 Vであり、印加電圧が低すぎると還元処理に多く
の時間を費やし、印加電圧が高すぎると良好な非線形特
性が得られない。
The voltage applied between the cathode and anode during cathodic reduction treatment is usually 0.
.. 1-1.5 V (in D), preferably 0.5-1
.. 3 V, and if the applied voltage is too low, a lot of time will be spent on the reduction process, and if the applied voltage is too high, good nonlinear characteristics will not be obtained.

電極間を流れる電流は電圧印加時より時間の経過ととも
に減少する。
The current flowing between the electrodes decreases over time from when voltage is applied.

処理時間は処理する酸化鉛層の膜厚により異なるが、陰
極の電流密度が0.05mA/cm’以下になるまで処
理をすることが良好な非線形特性を得る上で好ましい。
Although the treatment time varies depending on the thickness of the lead oxide layer to be treated, it is preferable to carry out the treatment until the current density of the cathode becomes 0.05 mA/cm' or less in order to obtain good nonlinear characteristics.

なお電解液の温度は電解液が凝固もしくは沸騰しない範
囲であればいずれの温度でもよいが、20〜70℃の範
囲にあることが好ましい。
The temperature of the electrolytic solution may be any temperature as long as the electrolytic solution does not solidify or boil, but is preferably in the range of 20 to 70°C.

次に、上記のようにして得られた酸化鉛薄膜上に前記と
同様にして第2の電極層を形成することにより、非線形
2端子素子を製造する。
Next, a second electrode layer is formed in the same manner as described above on the lead oxide thin film obtained as described above, thereby manufacturing a nonlinear two-terminal element.

本発明において、電圧と電流との非線形特性とは、I−
V特性が第4図に示すような曲線で示されることを表わ
す。
In the present invention, the nonlinear characteristics of voltage and current are I-
This indicates that the V characteristic is represented by a curve as shown in FIG.

[作 用] 本発明は、非線形特性を有する金属酸化物薄膜を電解析
出法によって形成できるので大面積化、均一化に対処す
ることのできる表示パネルを作製することができる。
[Function] According to the present invention, since a metal oxide thin film having nonlinear characteristics can be formed by electrolytic deposition, a display panel that can be made larger and more uniform can be manufactured.

[実施例] 以下に図面を参照して本発明の実施例を詳細に説明する
[Examples] Examples of the present invention will be described in detail below with reference to the drawings.

実施例1 第1図に本発明の実施例を示す。同図(A)は平面図、
同図(B)は図(A)のA−A’線に沿った断面図であ
る。
Example 1 FIG. 1 shows an example of the present invention. The same figure (A) is a plan view,
Figure (B) is a sectional view taken along line AA' in Figure (A).

(1) 1mm x 50mmx 60mmのITOコ
ートガラス基板10(枕崎真空製)上にリソグラフィー
工程を施し続いてエツチング工程を施して、透明電極1
3をパターニングした。
(1) A lithography process was performed on an ITO coated glass substrate 10 (manufactured by Makurazaki Vacuum Co., Ltd.) of 1 mm x 50 mm x 60 mm, followed by an etching process to form a transparent electrode 1.
3 was patterned.

次にこの透明電極13をパターニングした基板上にニッ
ケル無電解メツキ法により、ニッケル層を形成後、リソ
グラフィー工程およびエツチング工程により走査電極1
1をストライブ状に形成した。
Next, a nickel layer is formed on the substrate patterned with the transparent electrode 13 by nickel electroless plating, and then the scanning electrode 1 is formed by a lithography process and an etching process.
1 was formed into stripes.

(2)ガラス容器に、−酸化鉛98.2g 、水酸化ナ
トリウム67.3g 、エチレンジアミン四酢酸二ナト
リウム235.8gを純水中に溶解し金属錯体を含む電
解イ夜1000 mftを調整した。
(2) In a glass container, 98.2 g of lead oxide, 67.3 g of sodium hydroxide, and 235.8 g of disodium ethylenediaminetetraacetate were dissolved in pure water to prepare 1000 mft of electrolysis containing the metal complex.

(3)陽極としての走査電極、および陰極としての白金
電極を上記(2)で得られた電解液に浸漬し、電解液の
温度60℃で陽極側で3mA/cm2の電流を10分間
流したところ、走査電極11上に約2.5μmの膜厚の
酸化鉛薄膜層12が生成した。
(3) A scanning electrode as an anode and a platinum electrode as a cathode were immersed in the electrolyte obtained in (2) above, and a current of 3 mA/cm2 was passed on the anode side for 10 minutes at an electrolyte temperature of 60°C. However, a lead oxide thin film layer 12 having a thickness of about 2.5 μm was formed on the scanning electrode 11 .

(4)さらに、陰極としての(3)で得られた酸化鉛薄
膜層12および陽極としての白金電極を3重量%硫酸水
溶液に浸漬し、25℃で陰極と陽極間に1.1■の電圧
を20分間印加した。
(4) Furthermore, the lead oxide thin film layer 12 obtained in (3) as a cathode and the platinum electrode as an anode were immersed in a 3% by weight sulfuric acid aqueous solution, and a voltage of 1.1 μ was applied between the cathode and the anode at 25°C. was applied for 20 minutes.

(5)基板洗浄後、Auペーストからなる電極I4をス
クリーン印刷し、第1図に示された非線形2端子素子を
有する基板を得た。基板10上に形成された非線形2端
子素子のI−V特性を測定したところ非線形特性が確認
された。
(5) After cleaning the substrate, an electrode I4 made of Au paste was screen printed to obtain a substrate having a nonlinear two-terminal element shown in FIG. When the IV characteristics of the nonlinear two-terminal element formed on the substrate 10 were measured, nonlinear characteristics were confirmed.

実施例2 第2図に木発明の他の実施例を示す。同図(A)は平面
図、同図(B)は図(A)におけるA−A’ 線に沿っ
た断面図である。
Embodiment 2 FIG. 2 shows another embodiment of the wooden invention. 3A is a plan view, and FIG. 2B is a sectional view taken along the line AA' in FIG.

(1) l+n+++ x 50n+n+x [iQm
mのガラス基板13をニッケル無電界メツキ法により約
2μmの厚さでメツキした後、リソグラフィ工程および
エツチング工程により、ストライブ状にメツキ層をバタ
ーニングして走査電極11を形成した。
(1) l+n+++ x 50n+n+x [iQm
After plating the glass substrate 13 of 200 m to a thickness of about 2 μm using a nickel electroless plating method, the plating layer was patterned into stripes by a lithography process and an etching process to form scanning electrodes 11.

(2)実施例1(3)と同様にして走査型イに11上に
酸化鉛薄膜層12を形成した。
(2) A lead oxide thin film layer 12 was formed on the scanning type A in the same manner as in Example 1 (3).

(3)さらに酸化鉛薄膜層12上′にITOコーティン
グ液2をスクリーン印刷し、透明電極13を第2図に示
すように形成し、第2図に示された非線形2端子素子を
有する基板を得た。基板lO上に形成された非線形2端
子素子のI−V特性を測定したところ非線形特性が確認
された。
(3) Furthermore, the ITO coating liquid 2 is screen printed on the lead oxide thin film layer 12', the transparent electrode 13 is formed as shown in FIG. 2, and the substrate having the nonlinear two-terminal element shown in FIG. Obtained. When the IV characteristics of the nonlinear two-terminal element formed on the substrate IO were measured, nonlinear characteristics were confirmed.

以上の実施例では金属酸化物として酸化鉛を用いた例を
説明した。しかし本発明における金属酸化物は酸化鉛に
は限られず、酸化銅、酸化イリジウム、酸化モリブデン
、酸化タングステン等電解析出法によって形成し得る金
属酸化物であれば上述した実施例と同様に表示パネルの
大面積化を簡単な方法で実現できる。
In the above embodiments, lead oxide was used as the metal oxide. However, the metal oxide in the present invention is not limited to lead oxide, and any metal oxide that can be formed by electrolytic deposition, such as copper oxide, iridium oxide, molybdenum oxide, or tungsten oxide, can be used in the display panel as in the above embodiment. A large area can be realized by a simple method.

[発明の効果] 以上説明したように、本発明によれば電極層/金属酸化
物薄膜/電極層の3層構成よりなる非線形2端子素子の
金属酸化物薄膜が電解析出法により形成されるので、表
示パネルの大面積化が容易であり、製造方法が簡便とな
る。
[Effects of the Invention] As explained above, according to the present invention, a metal oxide thin film of a nonlinear two-terminal element having a three-layer structure of electrode layer/metal oxide thin film/electrode layer is formed by electrolytic deposition. Therefore, it is easy to increase the area of the display panel, and the manufacturing method is simple.

また、従来の非線形2端子素子とは違って必ずしも真空
装置は使用する必要がないので、製造設備は小型となり
、製造コストを低くすることができる。
Further, unlike conventional nonlinear two-terminal elements, it is not necessary to use a vacuum device, so manufacturing equipment can be made smaller and manufacturing costs can be lowered.

なお、本発明による非線形2端子素子は、液晶表示素子
、エレクトロクロミック表示素子、PLZT表示素子、
蛍光表示表示素子、エレクトロルミネッセンス表示素子
、プラズマ発光表示素子等の駆動に有効である。
Note that the nonlinear two-terminal device according to the present invention includes a liquid crystal display device, an electrochromic display device, a PLZT display device,
It is effective for driving fluorescent display elements, electroluminescence display elements, plasma emission display elements, etc.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(A)およびCB)はそれぞれ本発明の実施例を
示す平面図および断面図、 第2図(A)および(B)はそれぞれ木発明の他の実施
例を示す平面図および断面図、 第3図(A)および(B)は、それぞれ従来の表示パネ
ルの一例を示す断面図および等価回路図、第4図は、非
線形2端子素子の1−V関係を示す特性図である。 10・・・基板、 11・・・走査電極、 12・・・酸化鉛薄膜層、 13・・・透明電極、 14・・・ペースト電極。 第3図
FIGS. 1(A) and CB) are a plan view and a sectional view showing an embodiment of the present invention, respectively. FIGS. 2(A) and (B) are a plan view and a sectional view showing another embodiment of the wooden invention, respectively. 3(A) and 3(B) are a cross-sectional view and an equivalent circuit diagram showing an example of a conventional display panel, respectively, and FIG. 4 is a characteristic diagram showing a 1-V relationship of a nonlinear two-terminal element. DESCRIPTION OF SYMBOLS 10... Substrate, 11... Scanning electrode, 12... Lead oxide thin film layer, 13... Transparent electrode, 14... Paste electrode. Figure 3

Claims (1)

【特許請求の範囲】[Claims] 1)第1の電極層と、該第1の電極層上に、電解析出法
によって形成された金属酸化物を含有する薄膜層と、該
金属酸化物を含有する薄膜上に形成された第2の電極層
とを具備してなる非線形2端子素子。
1) A first electrode layer, a thin film layer containing a metal oxide formed by electrolytic deposition on the first electrode layer, and a thin film layer containing a metal oxide formed on the thin film containing the metal oxide. A nonlinear two-terminal element comprising two electrode layers.
JP63049826A 1988-03-04 1988-03-04 Nonlinear two-terminal element Pending JPH01224728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63049826A JPH01224728A (en) 1988-03-04 1988-03-04 Nonlinear two-terminal element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63049826A JPH01224728A (en) 1988-03-04 1988-03-04 Nonlinear two-terminal element

Publications (1)

Publication Number Publication Date
JPH01224728A true JPH01224728A (en) 1989-09-07

Family

ID=12841902

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63049826A Pending JPH01224728A (en) 1988-03-04 1988-03-04 Nonlinear two-terminal element

Country Status (1)

Country Link
JP (1) JPH01224728A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0404545A2 (en) * 1989-06-20 1990-12-27 Japan Synthetic Rubber Co., Ltd. Active matrix substrate for liquid crystal display device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0404545A2 (en) * 1989-06-20 1990-12-27 Japan Synthetic Rubber Co., Ltd. Active matrix substrate for liquid crystal display device

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