JPH027475B2 - - Google Patents
Info
- Publication number
- JPH027475B2 JPH027475B2 JP57078856A JP7885682A JPH027475B2 JP H027475 B2 JPH027475 B2 JP H027475B2 JP 57078856 A JP57078856 A JP 57078856A JP 7885682 A JP7885682 A JP 7885682A JP H027475 B2 JPH027475 B2 JP H027475B2
- Authority
- JP
- Japan
- Prior art keywords
- plating
- nickel
- transparent conductive
- conductive film
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007747 plating Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 15
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 29
- 229910052759 nickel Inorganic materials 0.000 description 15
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 239000002184 metal Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 6
- 229910001887 tin oxide Inorganic materials 0.000 description 6
- 239000011159 matrix material Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 4
- QDWJUBJKEHXSMT-UHFFFAOYSA-N boranylidynenickel Chemical compound [Ni]#B QDWJUBJKEHXSMT-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000002574 poison Substances 0.000 description 3
- 231100000614 poison Toxicity 0.000 description 3
- 229910000521 B alloy Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 101150003085 Pdcl gene Proteins 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 102220518617 Repressor of RNA polymerase III transcription MAF1 homolog_S68D_mutation Human genes 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910018104 Ni-P Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910018536 Ni—P Inorganic materials 0.000 description 1
- 229910001096 P alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229960000583 acetic acid Drugs 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 229920002301 cellulose acetate Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
【発明の詳細な説明】
本発明は液晶パネル、エレクトロクロミツクパ
ネル等表示パネル（以下液晶パネルを主体に述べ
る。）の製造方法に関するものであり特に金属配
線された液晶パネルに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a display panel such as a liquid crystal panel or an electrochromic panel (hereinafter, the liquid crystal panel will be mainly described), and particularly relates to a liquid crystal panel having metal wiring.
液晶パネルには透明導電膜が用いられているが
パターンの微細化にともない抵抗が問題になり必
要とする画素以外は金属配線で抵抗の大きいとこ
ろを補つていこうとする動向がある。特に多重マ
トリクスパネルではパターンピツチ10μ程度が必
要とされるため画素以外は金属配線の必要性が生
ずる。通常このような電極構造は、ガラス上に透
明導電膜を全面形成する工程→これをパターニン
グする工程（画素部とリード部を残して）→全面
にCr―Auを真空蒸着する工程→画素部とリード
部以下のCr―Auをエツチング除去する工程によ
つて得るか、又は全面に透明導電膜を全面に形成
する工程→全面にCr―Auを形成する工程→リー
ド部のCr―Au部を残してCr―Auをエツチングす
る工程→リード部及び画素部を残して透明導電膜
をエツチングする工程によつて得ていた。いずれ
の方法も透明導電膜と金属リード部（Cr―Au）
のパターンあわせが非常に困難、透明導電膜、
Cr，Auとそれぞれ独立してエツチングするエツ
チング液の必要性（アンダーエツチングの問題）、
Cr，Au被覆工程が真空法によるため高価である
等々の欠点を有していた。 Transparent conductive films are used in liquid crystal panels, but as patterns become finer, resistance becomes a problem, and there is a trend to use metal wiring to compensate for areas with high resistance except for necessary pixels. In particular, in a multi-matrix panel, a pattern pitch of about 10 microns is required, which necessitates metal wiring for areas other than pixels. Normally, such an electrode structure is created by forming a transparent conductive film on the entire surface of the glass → patterning it (leaving the pixel area and the lead area) → vacuum-depositing Cr-Au on the entire surface → pixel area and A process of etching away the Cr-Au below the lead part, or a process of forming a transparent conductive film on the entire surface → a process of forming Cr-Au on the entire surface → leaving the Cr-Au part of the lead part. It was obtained by etching the Cr--Au using a process followed by etching the transparent conductive film, leaving the lead portion and pixel portion. Both methods involve a transparent conductive film and a metal lead part (Cr-Au).
It is very difficult to match the pattern of transparent conductive film,
The need for an etching solution that etches Cr and Au independently (under-etching problem);
Since the Cr and Au coating process is performed using a vacuum method, it has drawbacks such as being expensive.
本発明の目的は真空法では不可能な透明導電膜
上のみにメツキする技術を使つて歩留りの良い金
属配線液晶パネルを得ることにある。 An object of the present invention is to obtain a metal wiring liquid crystal panel with a high yield by using a technique of plating only on a transparent conductive film, which is impossible with a vacuum method.
本発明によれば前記方法のようなパターン位置
合せ（透明導電膜と金属リード部）の問題がほと
んどなく（大きなパターンである画素部の合わせ
だけであり多少ずれても実用上問題とならない）、
安価に金属リード付き液晶パネルが得られる。 According to the present invention, there is almost no problem with pattern alignment (transparent conductive film and metal lead part) as in the above method (it only involves alignment of the pixel part, which is a large pattern, so even if there is some misalignment, there is no practical problem).
A liquid crystal panel with metal leads can be obtained at low cost.
本発明に用いられる透明な絶縁基板としてソー
ダガラス、石英ガラス、ホウケイ酸ガラス等の無
機カラス、ポリエステル、エポキシ、酢酸セルロ
ース等のプラスチツクフイルムが考えられる。液
晶のモードによつては片側基板は不透明でも良
く、セラミツク上に本発明の電極構造を構成して
も良い、いかにしても信号電極が本発明の電極構
造を有す。用いられる透明導電膜としては酸化ス
ズ系（酸化スズ又は酸化スズにアンチモン、ホウ
素、フツ素等をドーピングしたもの）でも良いし
酸化インジウム系（酸化インジウム又は酸化スズ
をドープしたもの等）でも良い。これらはCVD
法、真空蒸着法、スパツタ法、イオンプレイテイ
ング法、印刷焼成法、浸漬焼付け法、スプレー
法、パイロゾルCVD法等により得られる。 Possible transparent insulating substrates used in the present invention include inorganic glasses such as soda glass, quartz glass, and borosilicate glass, and plastic films such as polyester, epoxy, and cellulose acetate. Depending on the mode of the liquid crystal, one side of the substrate may be opaque, and the electrode structure of the present invention may be formed on ceramic.In any case, the signal electrode has the electrode structure of the present invention. The transparent conductive film used may be tin oxide based (tin oxide or tin oxide doped with antimony, boron, fluorine, etc.) or indium oxide based (indium oxide or tin oxide doped). These are CVD
method, vacuum evaporation method, sputtering method, ion plating method, print baking method, immersion baking method, spray method, pyrosol CVD method, etc.
これらの透明導電膜は所定のフオト工程を経て
HCl、HCl.Zn、Cr2+／Cr3+レドツクス系等を用
いてエツチングパターニングされる。次に透明電
極上にのみニツケルメツキ又はニツケル合金メツ
キする方法としては、通常のSnCl2→PdCl2→
NiPメツキ工程のPdCl2工程後に触媒毒である
Pb、Sbを含んだ溶液に浸漬する。又は一液タイ
プの時はニツケル又はその合金メツキ前に前記触
媒毒に浸漬することにより選択的なメツキが得ら
れる。ニツケルメツキ又はニツケル合金メツキの
膜厚は500Å〜10000Åが適当であり密着性からし
て1000Å〜6000Åが適当である。 These transparent conductive films undergo a prescribed photo process.
Etching patterning is performed using HCl, HCl.Zn, Cr 2+ /Cr 3+ redox system, etc. Next, as a method of nickel plating or nickel alloy plating only on the transparent electrode, the usual SnCl 2 →PdCl 2 →
PdCl in NiP plating process is catalyst poison after 2 steps
Immerse in a solution containing Pb and Sb. Alternatively, in the case of a one-component type, selective plating can be obtained by immersing the nickel or its alloy in the catalyst poison before plating. The thickness of the nickel plating or nickel alloy plating is suitably 500 Å to 10000 Å, and from the viewpoint of adhesion, 1000 Å to 6000 Å.
ニツケルメツキ又はニツケル合金メツキとして
はNi、Ni―Ｐ、Ni―Ｂ、Ni―Co―Ｐ、Ni―Cr
―Ｐ、Ni―Fe―Ｐ、Ni―Co―Cr―Ｐ等であり主
としてニツケル基リン合金、ニツケル基ホウ素合
金が用いられる。透明導電膜上への密着性からし
てNi―Ｐ、Ni―Ｂ合金が特に優れる。Ｐ、Ｂの
含有量は1wt％〜20wt％が好ましい。これらを無
電解メツキした後密着性を向上させ、耐摩耗性を
向上させるため常温に１週間以上放置するか50℃
〜500℃で熱処理を行なつても良い。 Nickel plating or nickel alloy plating includes Ni, Ni-P, Ni-B, Ni-Co-P, Ni-Cr.
-P, Ni-Fe-P, Ni-Co-Cr-P, etc., and nickel-based phosphorus alloys and nickel-based boron alloys are mainly used. Ni--P and Ni--B alloys are particularly excellent in terms of adhesion to transparent conductive films. The content of P and B is preferably 1 wt% to 20 wt%. After electroless plating these, in order to improve adhesion and wear resistance, leave them at room temperature for at least one week or at 50°C.
Heat treatment may be performed at ~500°C.
前記ニツケル又はニツケル合金被膜を形成後熱
処理する場合は、下層との密着性等が向上するも
ののその表面に導通性がやや劣る酸化ニツケルが
形成されるが、この酸化ニツケルを除去するため
塩化第二鉄の浴中に浸漬させるようにしてもよ
い。又、前記ニツケル又はニツケル合金被覆のエ
ツチングは例えばエツチング部をレジスト後次の
エツチング液（常温）に30秒程度（被膜厚に応じ
て変動）浸漬して行なう。 When the nickel or nickel alloy film is heat-treated after formation, nickel oxide with slightly poor conductivity is formed on the surface although adhesion with the underlying layer is improved. It may also be immersed in an iron bath. Etching of the nickel or nickel alloy coating is carried out, for example, by immersing the etched portion in the next etching solution (at room temperature) for about 30 seconds (varies depending on the thickness of the coating) after resisting.
エツチング液（容量比） リン酸 35％ 硝 酸 35％ 酢 酸 5％ 硫 酸 5％ 以下実施例により本発明を詳細に説明する。 Etching liquid (volume ratio) Phosphoric acid 35% Nitric acid 35% Vinegar acid 5% Sulfuric acid 5% The present invention will be explained in detail below with reference to Examples.
実施例 １
第１図のように上パネル基板の走査電極（鎖
線）に対し下パネル基板に四重マトリクスパネル
用に信号電極である透明導電膜（５％の酸化スズ
をドープした酸化インジウム）をエツチング形成
した。リード部１のピツチは10μ、画素部２のサ
イズは70μである。次に無電解メツキプロセスと
して１液性の増感剤である日立化成社製HS101B
で５分間処理し、触媒毒を含んだ日立化成社製
HS201で10分間処理し、水洗後、カニゼン社製
S68D無電解ニツケルリンメツキ液を用いて60℃
で３分間処理し、透明導電膜上のみに（第２図針
線部）ニツケルリンメツキを4000Å施した。次に
フオト工程を経て画素上のニツケルリンメツキを
第３図のように前述の方法によりエツチング除去
した。Ａ―Ｂ間の抵抗測定をしたところ第１図で
は10KΩ、第３図では500Ωであつた。第１図で走
査電極と組み合わせ16行×80桁（５×７ドツト）
１／32dutyで四重マトリクスの液晶パネルを作成し
たところ端子から遠い所はON状態でもハーフト
ーンになり表示むらが生じた。しかし同様のパネ
ルを第３図の構成で作成したところ表示むらを生
じなかつた。又前述の従来方法で作成したパネル
は電極の切れ、シヨート、ズレ等の不良が90％で
あつたが、本実施例によつて得たものは30％の不
良（全て10μのリード部１の透明導電膜のエツチ
ング切れ）のみであつた。本実施例によつて得ら
れたニツケルリンメツキ被膜はさらに密着性を向
上させ又耐摩耗性を向上させるためにパターン形
成前又はパターン形成後に80℃〜500℃の熱処理
を施しても良い。Example 1 As shown in Figure 1, a transparent conductive film (indium oxide doped with 5% tin oxide) which is a signal electrode for a quadruple matrix panel is placed on the lower panel substrate in contrast to the scanning electrode (dashed line) on the upper panel substrate. Formed by etching. The pitch of the lead portion 1 is 10μ, and the size of the pixel portion 2 is 70μ. Next, for the electroless plating process, we used a one-component sensitizer, HS101B manufactured by Hitachi Chemical Co., Ltd.
made by Hitachi Chemical Co., Ltd., which contains catalyst poison.
After treatment with HS201 for 10 minutes and washing with water,
60℃ using S68D electroless nickel phosphor plating solution
was treated for 3 minutes, and 4000 Å of nickel phosphor plating was applied only on the transparent conductive film (the needle line area in Figure 2). Next, after a photo process, the nickel plating on the pixels was removed by etching as shown in FIG. 3 by the method described above. When I measured the resistance between A and B, it was 10KΩ in Figure 1 and 500Ω in Figure 3. In Figure 1, combination with scanning electrodes: 16 rows x 80 digits (5 x 7 dots)
When I created a quadruple matrix liquid crystal panel with a duty of 1/32, areas far from the terminals showed halftones and uneven display even in the ON state. However, when a similar panel was made with the configuration shown in FIG. 3, no display unevenness occurred. Furthermore, 90% of the panels produced by the conventional method described above had defects such as broken electrodes, shorts, and misalignments, but the panels obtained by this example had 30% defects (all of which were caused by the 10μ lead portion 1). There was only an etching break on the transparent conductive film. The nickel phosphor plating film obtained in this example may be subjected to heat treatment at 80°C to 500°C before or after pattern formation in order to further improve adhesion and wear resistance.
実施例 ２
実施例１において無電解ニツケルリンメツキで
あるカニゼン社製S′68Dの代わりに無電解ニツケ
ルボロンメツキである上村工業社製ベルニツケル
を用い3500Åメツキした。結果は実施例１と同様
であつた。Example 2 In Example 1, instead of the electroless nickel plating S'68D manufactured by Kanigen Co., Ltd., electroless nickel boron plating used Belnickel manufactured by Uemura Kogyo Co., Ltd. was used for plating with a thickness of 3500 Å. The results were similar to Example 1.
実施例 ３
実施例１において無電解ニツケルリンメツキを
1500Å（カニゼン社製S68D）施し、さらにニツ
ケルボロンメツキ（上村工業社製ベルニツケル）
を2000Å施し積層構造にした。これは透明導電膜
への密着性がニツケルリンメツキ被覆の方がニツ
ケルボロンメツキ被膜より優れているためであ
り、又前者は後者に比し表面硬度が劣るためそれ
ぞれの特徴を生かした使い方である。表面硬度は
液晶を配向させる綿布等によるラビング処理工程
に重要な役割をもつている。このようにして作成
した液晶パネルは実施例１と同様の結果であつ
た。Example 3 Electroless nickel plating was performed in Example 1.
1500Å (S68D made by Kanizen Co., Ltd.) and nickel boron plating (Belnickel made by Uemura Kogyo Co., Ltd.)
2000Å to create a laminated structure. This is because nickel phosphor plating has better adhesion to transparent conductive films than nickel boron plating, and the former has inferior surface hardness compared to the latter, so each should be used to take advantage of its characteristics. . Surface hardness plays an important role in the rubbing process using cotton cloth or the like to orient liquid crystals. The liquid crystal panel produced in this manner had the same results as in Example 1.
実施例 ４
実施例１で酸化インジウム透明導電膜の代わり
にCVD法で作成した酸化スズ（酸化アンチモン
を5wt％ドープしたもの）透明導電膜（膜厚500
Å）を用いた。透明導電膜のエツチングは6N塩
酸酸性のCr2+／Cr3+レドツクス系を用いて行なつ
た。Ａ―Ｂ間の抵抗は100KΩであつた。実施例
１と同様に無電解ニツケルリンメツキを施し、同
様のパネルを作成した。第３図のＡ―Ｂ間の抵抗
は750Ωであつた。四重マトリクスパネルの特性
は同様であり効果大であつた。Example 4 Instead of the indium oxide transparent conductive film in Example 1, a tin oxide (doped with 5 wt% antimony oxide) transparent conductive film (film thickness 500 mm) was prepared by CVD method.
Å) was used. Etching of the transparent conductive film was performed using a 6N hydrochloric acid acidic Cr 2+ /Cr 3+ redox system. The resistance between A and B was 100KΩ. Electroless nickel plating was applied in the same manner as in Example 1 to produce a similar panel. The resistance between A and B in Figure 3 was 750Ω. The characteristics of the quadruple matrix panel were similar and the effect was great.
以上述べたように本発明によれば、透明電極の
リード部のみに均一な膜厚の金属膜を容易な工程
で安価に製造できるとともに、大量生産に適した
製造方法が実現できる。 As described above, according to the present invention, a metal film having a uniform thickness can be manufactured only on the lead portion of a transparent electrode at a low cost through a simple process, and a manufacturing method suitable for mass production can be realized.
特に、透明電極上に、ニツケル合金メツキ被膜
を無電解メツキ法により形成したので、透明電極
の全面にわたり均一な膜厚の被膜が得られる。さ
らに、微細化されたリード部パターンに対しても
同様に均一な被膜が形成される。したがつて、画
素部上に形成された前記被膜のエツチングの際に
も、部分的に被膜が残るということがなく、均一
にエツチングされる。さらに、無電解メツキ被膜
として、ニツケル合金メツキ被膜を用いたので、
透明導電膜との密着性に優れている。 In particular, since the nickel alloy plating film is formed on the transparent electrode by electroless plating, a film with a uniform thickness can be obtained over the entire surface of the transparent electrode. Furthermore, a uniform coating is similarly formed on the miniaturized lead pattern. Therefore, even when the film formed on the pixel portion is etched, the film is not left partially and is etched uniformly. Furthermore, since a nickel alloy plating film was used as the electroless plating film,
Excellent adhesion to transparent conductive film.
本発明により得られたパネルは、ａ―Ｎパネ
ル、液晶テレビ、時計、電卓等の表示パネルとし
て応用可能である。 The panels obtained according to the present invention can be applied as display panels for aN panels, liquid crystal televisions, watches, calculators, and the like.
第１図…一般の四重マトリクスパネルの透明導
電膜構造図、第２図…本発明により透明導電膜上
にのみニツケルリンメツキを施した電極構造図、
第３図…本発明により画素部のニツケルリンメツ
キをエツチング除去した信号電極構造図。
Fig. 1...A diagram of the transparent conductive film structure of a general quadruple matrix panel, Fig. 2...A diagram of the electrode structure in which nickel plating is applied only on the transparent conductive film according to the present invention.
FIG. 3: A structural diagram of a signal electrode in which the nickel plating in the pixel area has been removed by etching according to the present invention.
Claims (1)
電膜をパターニングして、複数の画素部およびリ
ード部からなる透明電極を形成する工程と、該透
明電極上にのみ選択的に無電解ニツケル合金メツ
キ被膜を形成する工程と、前記画素部上に形成さ
れた前記無電解ニツケル合金メツキ被膜をエツチ
ングして除去する工程とを具備することを特徴と
する表示パネルの製造方法。1. A process of patterning a transparent conductive film formed on one entire surface of an insulating substrate to form a transparent electrode consisting of a plurality of pixel parts and lead parts, and selectively applying an electroless nickel alloy only on the transparent electrode. A method for manufacturing a display panel, comprising the steps of forming a plating film and etching and removing the electroless nickel alloy plating film formed on the pixel portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7885682A JPS58194083A (en) | 1982-05-10 | 1982-05-10 | Manufacture of display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7885682A JPS58194083A (en) | 1982-05-10 | 1982-05-10 | Manufacture of display panel |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58194083A JPS58194083A (en) | 1983-11-11 |
| JPH027475B2 true JPH027475B2 (en) | 1990-02-19 |
Family
ID=13673464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7885682A Granted JPS58194083A (en) | 1982-05-10 | 1982-05-10 | Manufacture of display panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58194083A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001047790A (en) | 1999-08-17 | 2001-02-20 | Kyowa Electric & Chem Co Ltd | Memo implement with electronic calculator |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS556346A (en) * | 1978-06-27 | 1980-01-17 | Sharp Kk | Electrode pattern and method of forming same |
| JPS5548935A (en) * | 1978-10-03 | 1980-04-08 | Sharp Corp | Forming of electrode pattern |
| JPS5752021A (en) * | 1980-09-12 | 1982-03-27 | Citizen Watch Co Ltd | Manufacture of liquid crystal display cell |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5938068Y2 (en) * | 1980-03-27 | 1984-10-22 | 株式会社日立製作所 | Pattern structure on the board |
-
1982
- 1982-05-10 JP JP7885682A patent/JPS58194083A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS556346A (en) * | 1978-06-27 | 1980-01-17 | Sharp Kk | Electrode pattern and method of forming same |
| JPS5548935A (en) * | 1978-10-03 | 1980-04-08 | Sharp Corp | Forming of electrode pattern |
| JPS5752021A (en) * | 1980-09-12 | 1982-03-27 | Citizen Watch Co Ltd | Manufacture of liquid crystal display cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58194083A (en) | 1983-11-11 |
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