JPH01220460A - Bump forming solder for semiconductor device - Google Patents
Bump forming solder for semiconductor deviceInfo
- Publication number
- JPH01220460A JPH01220460A JP4443088A JP4443088A JPH01220460A JP H01220460 A JPH01220460 A JP H01220460A JP 4443088 A JP4443088 A JP 4443088A JP 4443088 A JP4443088 A JP 4443088A JP H01220460 A JPH01220460 A JP H01220460A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- bump forming
- semiconductor device
- main components
- aluminum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000679 solder Inorganic materials 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 title claims abstract description 8
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000011701 zinc Substances 0.000 claims abstract description 6
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 abstract description 8
- 238000002844 melting Methods 0.000 abstract description 3
- 230000008018 melting Effects 0.000 abstract description 3
- 238000005476 soldering Methods 0.000 abstract description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
発明の要約
ＩＣチップのバンプ材料をＺ ｎ ／ Ａ ｊ！系とし
たため、従来のＳ ｎ ／ Ｐ ｂ系よりも、耐熱性向
上。[Detailed Description of the Invention] Summary of the Invention The bump material of an IC chip is made of Z n /A j! Because it is a Sn/Pb system, it has improved heat resistance than the conventional Sn/Pb system.
電気伝導度向上、バンプ形成工程の簡略化等が可能とな
る。It becomes possible to improve electrical conductivity and simplify the bump forming process.
発明の背景
この発明は、半導体装置、とくにＩＣチップを、半導体
基板、プリント配線基板等に実装するときに用いられる
バンプ形成材料、すなわちバンプ形成用ハンダに関する
。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bump-forming material, ie, bump-forming solder, used when mounting a semiconductor device, particularly an IC chip, on a semiconductor substrate, a printed wiring board, or the like.
従来のバンプ材料としては、金、またはスズ鉛系がよく
用いられ、ｋｋ近では特に、フリップチップ・ボンディ
ング法においてスズ鉛系が多く用いられるようになって
きた。しかしこのような従来のスズ鉛系のハンダでは融
点が低く、高集積化された近年のＩＣチップは発熱量も
多く高温になるので熱に対する信頼性に問題がある。一
方、金を用いた場合には上記した耐熱性の問題は無いが
高価であり、またハンダ付で接着する場合ハンダ食われ
と呼ばれる現象が発生し、つけ直しができないという問
題がある。Gold or tin-lead materials are often used as conventional bump materials, and tin-lead materials are increasingly being used in the flip-chip bonding method, especially near KK. However, such conventional tin-lead solder has a low melting point, and recent highly integrated IC chips generate a lot of heat and reach high temperatures, so there is a problem with thermal reliability. On the other hand, when gold is used, although it does not have the above-mentioned heat resistance problem, it is expensive, and when it is soldered and bonded, a phenomenon called solder erosion occurs, making it impossible to reattach.
発明の概要
この発明は耐熱性があり、しかも比較的安価なバンプ形
成用ハンダを提供することを目的とする。SUMMARY OF THE INVENTION An object of the present invention is to provide a heat-resistant and relatively inexpensive solder for forming bumps.
この発明による半導体装置のバンプ形成用ハンダは、ア
ルミニウム（Ａ（）および亜鉛（Ｚｎ）を主成分とする
ことを特徴とする。The solder for forming bumps in a semiconductor device according to the present invention is characterized by containing aluminum (A()) and zinc (Zn) as main components.
この発明によればその構成をアルミニウムと亜鉛を主成
分とするバンプ形成材料としたので。According to the present invention, the bump forming material is composed of aluminum and zinc as main components.
■ 融点を３８０℃程度まで上げることができ。■ The melting point can be raised to around 380℃.
ＩＣチップの発熱に対しても問題がない。There is no problem with heat generation from the IC chip.
■ ＩＣチップ等の半導体装置のアルミニウム電極に対
しても密着が強い。■ Strong adhesion to aluminum electrodes of semiconductor devices such as IC chips.
■ アルミニウム電極に特別な表面処理を必要としない
。■ No special surface treatment is required for the aluminum electrode.
■ 材料が安価である。■ Materials are inexpensive.
■ ハンダ付をしてもハンダ食われが無い。■ No solder corrosion even after soldering.
笠の効果が得られる。You can get the effect of a hat.
実施例の説明
バンプ形成用ハンダの成分比２口／Ａｊ！を約９／１と
した。固＃［１線は３７９℃、液相線は３９０℃１作業
温度は３８０℃である。Description of Examples Component ratio of bump forming solder: 2/Aj! was approximately 9/1. The solid line is 379°C, the liquidus line is 390°C, and the working temperature is 380°C.
このハンダを溶融した超音波式ハンダ槽（超音波周波数
２１Ｈ１ｚ、設定温度３８０〜４００℃）を用いて、最
小ＩＣパッドピッチ １８０μ−のＩＣ（８０パツド）
を、１〜３ ｓｅｃデイツプ後引きあげ、基板」二にボ
ンディングした。雰囲気は非酸化雰囲気（Ｎ２を流した
）で行った。その結果８０ピン（Ａ、ｉ７製）全てにつ
いて、ハンダの「ブリッジ現象」なくハンダをつけるこ
とができた。Using an ultrasonic solder bath (ultrasonic frequency 21Hz, set temperature 380-400℃) in which this solder was melted, an IC (80 pads) with a minimum IC pad pitch of 180μ- is produced.
After dipping for 1 to 3 seconds, it was pulled up and bonded to the substrate. The atmosphere was a non-oxidizing atmosphere (N2 was flowed). As a result, I was able to solder all 80 pins (A, made by i7) without the solder "bridging phenomenon."
以 上that's all
Claims (1)
バンプ形成用ハンダ。A solder for forming bumps on semiconductor devices whose main components are aluminum and zinc.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4443088A JPH01220460A (en) | 1988-02-29 | 1988-02-29 | Bump forming solder for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4443088A JPH01220460A (en) | 1988-02-29 | 1988-02-29 | Bump forming solder for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01220460A true JPH01220460A (en) | 1989-09-04 |
Family
ID=12691275
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4443088A Pending JPH01220460A (en) | 1988-02-29 | 1988-02-29 | Bump forming solder for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01220460A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5143865A (en) * | 1988-09-02 | 1992-09-01 | Kabushiki Kaisha Toshiba | Metal bump type semiconductor device and method for manufacturing the same |
-
1988
- 1988-02-29 JP JP4443088A patent/JPH01220460A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5143865A (en) * | 1988-09-02 | 1992-09-01 | Kabushiki Kaisha Toshiba | Metal bump type semiconductor device and method for manufacturing the same |
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